ES355667A1 - Metodo de fabricacion de un dispositivo semiconductor. - Google Patents

Metodo de fabricacion de un dispositivo semiconductor.

Info

Publication number
ES355667A1
ES355667A1 ES355667A ES355667A ES355667A1 ES 355667 A1 ES355667 A1 ES 355667A1 ES 355667 A ES355667 A ES 355667A ES 355667 A ES355667 A ES 355667A ES 355667 A1 ES355667 A1 ES 355667A1
Authority
ES
Spain
Prior art keywords
semiconductor device
manufacturing
elements
chalcogenide
cadmium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES355667A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES355667A1 publication Critical patent/ES355667A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P10/00
    • H10P14/40
    • H10P95/00
    • H10P95/50
    • H10P95/80
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/8603Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/064Gp II-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
ES355667A 1966-08-17 1968-07-01 Metodo de fabricacion de un dispositivo semiconductor. Expired ES355667A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6611537A NL6611537A (enExample) 1966-08-17 1966-08-17

Publications (1)

Publication Number Publication Date
ES355667A1 true ES355667A1 (es) 1970-01-01

Family

ID=19797428

Family Applications (2)

Application Number Title Priority Date Filing Date
ES355667A Expired ES355667A1 (es) 1966-08-17 1968-07-01 Metodo de fabricacion de un dispositivo semiconductor.
ES344100A Expired ES344100A1 (es) 1966-08-17 1968-08-14 Dispositivo semiconductor.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES344100A Expired ES344100A1 (es) 1966-08-17 1968-08-14 Dispositivo semiconductor.

Country Status (11)

Country Link
US (1) US3518511A (enExample)
JP (1) JPS4615447B1 (enExample)
AT (1) AT297101B (enExample)
BE (1) BE702692A (enExample)
CH (1) CH478457A (enExample)
DE (1) DE1614272A1 (enExample)
ES (2) ES355667A1 (enExample)
FR (1) FR1546614A (enExample)
GB (1) GB1193716A (enExample)
NL (1) NL6611537A (enExample)
SE (1) SE349894B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780427A (en) * 1969-04-25 1973-12-25 Monsanto Co Ohmic contact to zinc sulfide devices
US3614551A (en) * 1969-04-25 1971-10-19 Monsanto Co Ohmic contact to zinc sulfide devices
DE3011952C2 (de) * 1980-03-27 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial
EP0242902A3 (en) * 1986-03-26 1988-08-31 Raychem Limited Protection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL257217A (enExample) * 1959-12-07
NL282170A (enExample) * 1961-08-17
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices
US3379931A (en) * 1964-12-01 1968-04-23 Gen Telephone & Elect Electroluminescent translator utilizing thin film transistors

Also Published As

Publication number Publication date
BE702692A (enExample) 1968-02-14
US3518511A (en) 1970-06-30
NL6611537A (enExample) 1968-02-19
SE349894B (enExample) 1972-10-09
FR1546614A (fr) 1968-11-22
GB1193716A (en) 1970-06-03
JPS4615447B1 (enExample) 1971-04-26
ES344100A1 (es) 1968-12-16
DE1614272A1 (de) 1970-02-26
AT297101B (de) 1972-03-10
CH478457A (de) 1969-09-15

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