ES349407A1 - Field Effect Transistor Amplifier Circuits - Google Patents
Field Effect Transistor Amplifier CircuitsInfo
- Publication number
- ES349407A1 ES349407A1 ES349407A ES349407A ES349407A1 ES 349407 A1 ES349407 A1 ES 349407A1 ES 349407 A ES349407 A ES 349407A ES 349407 A ES349407 A ES 349407A ES 349407 A1 ES349407 A1 ES 349407A1
- Authority
- ES
- Spain
- Prior art keywords
- field effect
- transistor
- input
- gate
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 6
- 230000032683 aging Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000003412 degenerative effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
- H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/18—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using conversion of DC into AC, e.g. with choppers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
Abstract
In an amplifier having a plurality of stages 10 1 , 10 2 ... 10 n connected in cascade, each stage consists of a common source connected insulated gate transistor 21, 14 which has a drain load impedance 20, 16 and the output 15 1 , 15 2 from each stage is connected to the gate of the succeeding transistor, the load impedance of at least one of the transistors is formed by the source-drain path of a further insulated gate field effect transistor 20 connected as a source follower and having the gate disposed to receive input signals and a feedback circuit 40 is connected between the output 15 n of the last stage 10 n and the gate 21g of the transistor 21 in the first stage 10 1 so as to provide a degenerativefeedback voltage. The feedback circuit may include an insulated gate field effect transistor 40 or this may be replaced by a resistor. Changes in the D.C. level at the output due to thermal effects, threshold voltage changes, supply voltage drift and component aging is fed back to the input 21g to provide degenerative feedback to compensate for these changes. The variations due to the A.C. signal, which may be at radio frequency, are filtered out by a capacitor 41. The load impedances of the 10 2 ... 10 n stages are shown as insulated gate field effect transistors 16 connected as diodes or alternatively these can each be replaced by a resistor. Several inputs can be connected to separate gate electrodes 20g, 16g 2 -(the earth connection to gates 16g 2 being removed), so that the output represents the combination of these inputs. The input signal can be disconnected from the first stage 10 1 in which case the gate 20g is connected to earth 12. Automatic gain control may be included in the circuit by connecting the source to drain path of an additional insulated gate field effect transistor between the gate and drain electrodes of one of the transistors 14. The AGC voltage signal is then supplied to the gate of the additional transistor. The input 17 1 to the amplifier may be fed from a source (70, Fig. 2, not shown) of slowly varying signal or D.C. signal via the conduction path of an enhancement type insulated gate field effect transistor (80) which conducts alternately with a further similar transistor (90). The input enhancement type transistors (80, 90) conduct alternately when their inputs increase above a certain threshold level and by connecting a detector circuit to the output of the amplifier, operating synchronously with the input transistors (80, 90) the output is converted back to D.C. The circuits may be constructed of individual components or may be formed as an integrated circuit. P or N type transistors may be used of the enhancement or depletion types. The input 19 may be a parallel tuned circuit of a transducer such as a microphone.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61043967A | 1967-01-19 | 1967-01-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES349407A1 true ES349407A1 (en) | 1969-04-01 |
Family
ID=24445016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES349407A Expired ES349407A1 (en) | 1967-01-19 | 1968-01-17 | Field Effect Transistor Amplifier Circuits |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT293479B (en) |
BE (1) | BE709584A (en) |
DE (1) | DE1562081C3 (en) |
ES (1) | ES349407A1 (en) |
FR (1) | FR1551547A (en) |
GB (1) | GB1157759A (en) |
NL (1) | NL146667B (en) |
SE (1) | SE348336B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58135121U (en) * | 1982-03-05 | 1983-09-10 | パイオニア株式会社 | level shift circuit |
CN111682853B (en) * | 2020-06-15 | 2023-05-16 | 电子科技大学 | Alternating capacitor network of capacitive coupling chopper amplifier |
-
1967
- 1967-12-29 GB GB5910867A patent/GB1157759A/en not_active Expired
-
1968
- 1968-01-17 FR FR1551547D patent/FR1551547A/fr not_active Expired
- 1968-01-17 ES ES349407A patent/ES349407A1/en not_active Expired
- 1968-01-18 BE BE709584D patent/BE709584A/xx unknown
- 1968-01-18 SE SE65768A patent/SE348336B/xx unknown
- 1968-01-18 NL NL6800788A patent/NL146667B/en unknown
- 1968-01-19 DE DE1968R0047832 patent/DE1562081C3/en not_active Expired
- 1968-01-19 AT AT60268A patent/AT293479B/en active
Also Published As
Publication number | Publication date |
---|---|
NL146667B (en) | 1975-07-15 |
GB1157759A (en) | 1969-07-09 |
BE709584A (en) | 1968-05-30 |
AT293479B (en) | 1971-10-11 |
DE1562081C3 (en) | 1979-09-27 |
SE348336B (en) | 1972-08-28 |
DE1562081B2 (en) | 1970-11-19 |
NL6800788A (en) | 1968-07-22 |
DE1562081A1 (en) | 1970-02-19 |
FR1551547A (en) | 1968-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3286189A (en) | High gain field-effect transistor-loaded amplifier | |
US4427903A (en) | Voltage current converter circuit | |
GB1324281A (en) | Transmission gate including a transistor and biasing circuits | |
GB1460605A (en) | Complementary field-effect transistor amplifier | |
GB1592800A (en) | Linear amplifier | |
US3491307A (en) | Differential amplifier featuring pole splitting compensation and common mode feedback | |
ES361235A1 (en) | Gain control biasing circuits for field-effect transistors | |
US3644838A (en) | Amplifier using bipolar and field-effect transistors | |
ES354862A1 (en) | Automatic gain control system employing multiple insulated gate field effect transistor | |
SE337407B (en) | ||
US3581226A (en) | Differential amplifier circuit using field effect transistors | |
GB1214918A (en) | Amplifier | |
ES349407A1 (en) | Field Effect Transistor Amplifier Circuits | |
ES291422A1 (en) | Direct coupled circuit utilizing fieldeffect transistors | |
SE336009B (en) | ||
GB1266005A (en) | ||
GB1121444A (en) | Circuitry for static bandwidth control over a wide dynamic range | |
US3697777A (en) | Signal generating circuit including a pair of cascade connected field effect transistors | |
GB1073206A (en) | Improvements in or relating to amplifier circuit arrangements | |
US3562656A (en) | Hybrid source follower amplifier | |
GB1055411A (en) | High input impedance direct-coupled transistor amplifier | |
US3522457A (en) | Filter having passive rc stages and active interface networks | |
GB1191650A (en) | Improvements in or relating to Low-noise Signal Amplifiers | |
US3469200A (en) | Plural stage transistor amplifier with d.c. feedback | |
GB870922A (en) | Improvements in or relating to delayed automatic gain control arrangements for transistor amplifier |