ES324968A1 - Celula de memoria rapida de diodo-tunel. - Google Patents

Celula de memoria rapida de diodo-tunel.

Info

Publication number
ES324968A1
ES324968A1 ES0324968A ES324968A ES324968A1 ES 324968 A1 ES324968 A1 ES 324968A1 ES 0324968 A ES0324968 A ES 0324968A ES 324968 A ES324968 A ES 324968A ES 324968 A1 ES324968 A1 ES 324968A1
Authority
ES
Spain
Prior art keywords
diode
cathode
translation
machine
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0324968A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of ES324968A1 publication Critical patent/ES324968A1/es
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/33Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
ES0324968A 1965-04-02 1966-03-31 Celula de memoria rapida de diodo-tunel. Expired ES324968A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11798A FR1441560A (fr) 1965-04-02 1965-04-02 Cellule de mémoire rapide à diode tunnel

Publications (1)

Publication Number Publication Date
ES324968A1 true ES324968A1 (es) 1967-04-01

Family

ID=8575571

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0324968A Expired ES324968A1 (es) 1965-04-02 1966-03-31 Celula de memoria rapida de diodo-tunel.

Country Status (8)

Country Link
BE (1) BE678231A (de)
CH (1) CH454225A (de)
DE (1) DE1499611B1 (de)
ES (1) ES324968A1 (de)
FR (1) FR1441560A (de)
GB (1) GB1089805A (de)
LU (1) LU50794A1 (de)
NL (1) NL6604271A (de)

Also Published As

Publication number Publication date
FR1441560A (fr) 1966-06-10
BE678231A (de) 1966-09-01
LU50794A1 (de) 1966-05-31
DE1499611B1 (de) 1970-08-06
NL6604271A (de) 1966-10-03
CH454225A (fr) 1968-04-15
GB1089805A (en) 1967-11-08

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