ES324968A1 - Celula de memoria rapida de diodo-tunel. - Google Patents
Celula de memoria rapida de diodo-tunel.Info
- Publication number
- ES324968A1 ES324968A1 ES0324968A ES324968A ES324968A1 ES 324968 A1 ES324968 A1 ES 324968A1 ES 0324968 A ES0324968 A ES 0324968A ES 324968 A ES324968 A ES 324968A ES 324968 A1 ES324968 A1 ES 324968A1
- Authority
- ES
- Spain
- Prior art keywords
- diode
- cathode
- translation
- machine
- legally binding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 210000000056 organ Anatomy 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/33—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR11798A FR1441560A (fr) | 1965-04-02 | 1965-04-02 | Cellule de mémoire rapide à diode tunnel |
Publications (1)
Publication Number | Publication Date |
---|---|
ES324968A1 true ES324968A1 (es) | 1967-04-01 |
Family
ID=8575571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0324968A Expired ES324968A1 (es) | 1965-04-02 | 1966-03-31 | Celula de memoria rapida de diodo-tunel. |
Country Status (8)
Country | Link |
---|---|
BE (1) | BE678231A (de) |
CH (1) | CH454225A (de) |
DE (1) | DE1499611B1 (de) |
ES (1) | ES324968A1 (de) |
FR (1) | FR1441560A (de) |
GB (1) | GB1089805A (de) |
LU (1) | LU50794A1 (de) |
NL (1) | NL6604271A (de) |
-
1965
- 1965-04-02 FR FR11798A patent/FR1441560A/fr not_active Expired
-
1966
- 1966-03-22 BE BE678231D patent/BE678231A/xx unknown
- 1966-03-24 CH CH425666A patent/CH454225A/fr unknown
- 1966-03-25 DE DE19661499611 patent/DE1499611B1/de active Pending
- 1966-03-29 GB GB1389666A patent/GB1089805A/en not_active Expired
- 1966-03-30 LU LU50794A patent/LU50794A1/xx unknown
- 1966-03-31 ES ES0324968A patent/ES324968A1/es not_active Expired
- 1966-03-31 NL NL6604271A patent/NL6604271A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR1441560A (fr) | 1966-06-10 |
BE678231A (de) | 1966-09-01 |
LU50794A1 (de) | 1966-05-31 |
DE1499611B1 (de) | 1970-08-06 |
NL6604271A (de) | 1966-10-03 |
CH454225A (fr) | 1968-04-15 |
GB1089805A (en) | 1967-11-08 |
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