ES322304A1 - Improvements in semiconductor devices - Google Patents

Improvements in semiconductor devices

Info

Publication number
ES322304A1
ES322304A1 ES0322304A ES322304A ES322304A1 ES 322304 A1 ES322304 A1 ES 322304A1 ES 0322304 A ES0322304 A ES 0322304A ES 322304 A ES322304 A ES 322304A ES 322304 A1 ES322304 A1 ES 322304A1
Authority
ES
Spain
Prior art keywords
contact
junction
base
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0322304A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES322304A1 publication Critical patent/ES322304A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

In a semi-conductor device which is not completely circularly symmetrical the effect of " current hogging " is reduced by contacting one region with a conductive layer the distance of the edge of which from the junction decreases as the distance from a low resistance contact applied to the layer increases. " Current hogging " is the concentration of the current flow at certain areas of a junction due to the geometry of the device. In a first embodiment a planar transistor having interdigitated base and emitter regions is produced and, as shown in Fig. 4, the emitterbase junction 13 is protected by an oxide layer the edge 12 of which defines the effective edge of a conductive layer 15 forming the emitter contact. Layer 15 is provided with a low resistance contact 18 and the effective edge 12 of the emitter contact 15 is closest to the junction 13 at those regions furthest from contact 18. Since the base contact carries much less current than the emitter contact the effective edge 11 of the base contact 14 can be spaced a constant distance from the junction 13. In a modification, Fig. 5 (not shown), the effective edges of the base and emitter contacts are spaced a constant distance apart, but the location of the PN junction between them varies to reduce the effect of " current hogging " in the base and emitter regions. In a further embodiment, Fig. 6 (not shown), the base and emitter regions are circularly symmetrical, the emitter electrode is in the form of a circular contact layer and a low resistance contact to the layer both symmetrically arranged, but the base contact is applied to a base contact layer at a peripherally located point, and to reduce the effects of " current hogging " the distance of the effective edge of the base contact layer from the junction is varied by forming the outer edge of the oxide covering the junction in a circle the centre of which is displaced from the centre of the emitter region towards the base contact. The method of producing a planar epitaxial NPN transistor is described in detail. The contact layers comprise aluminium evaporated over the masked surface and masked and etched to produce the required electrodes. The device is gold-soldered to a molybdenum disc which is soldered to a copper header. The contact layers are connected to lead-out wires by means of aluminium wires. It is also described how the method can be modified to produce mesa transistors. Reference has been directed by the Comptroller to Specification 1,032,599.
ES0322304A 1965-01-29 1966-01-27 Improvements in semiconductor devices Expired ES322304A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB402765A GB1103771A (en) 1965-01-29 1965-01-29 Improvements in semiconductor devices

Publications (1)

Publication Number Publication Date
ES322304A1 true ES322304A1 (en) 1966-11-16

Family

ID=9769353

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0322304A Expired ES322304A1 (en) 1965-01-29 1966-01-27 Improvements in semiconductor devices

Country Status (8)

Country Link
AT (1) AT273226B (en)
BE (1) BE675697A (en)
DE (1) DE1564380A1 (en)
DK (1) DK116070B (en)
ES (1) ES322304A1 (en)
GB (1) GB1103771A (en)
NL (1) NL6600909A (en)
SE (1) SE326775B (en)

Also Published As

Publication number Publication date
DE1564380A1 (en) 1969-08-21
BE675697A (en) 1966-07-27
AT273226B (en) 1969-08-11
DK116070B (en) 1969-12-08
SE326775B (en) 1970-08-03
NL6600909A (en) 1966-08-01
GB1103771A (en) 1968-02-21

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