ES289957A1 - Rectificador de potencia controlado - Google Patents

Rectificador de potencia controlado

Info

Publication number
ES289957A1
ES289957A1 ES0289957A ES289957A ES289957A1 ES 289957 A1 ES289957 A1 ES 289957A1 ES 0289957 A ES0289957 A ES 0289957A ES 289957 A ES289957 A ES 289957A ES 289957 A1 ES289957 A1 ES 289957A1
Authority
ES
Spain
Prior art keywords
terminal
controlled power
power rectifier
attachment
surface portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0289957A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of ES289957A1 publication Critical patent/ES289957A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Die Bonding (AREA)
  • Motor Or Generator Current Collectors (AREA)
ES0289957A 1962-07-27 1963-07-05 Rectificador de potencia controlado Expired ES289957A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US212974A US3274460A (en) 1962-07-27 1962-07-27 Controlled rectifier comprising a resistive plating interconnecting adjacent n and p layers

Publications (1)

Publication Number Publication Date
ES289957A1 true ES289957A1 (es) 1963-12-01

Family

ID=22793196

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0289957A Expired ES289957A1 (es) 1962-07-27 1963-07-05 Rectificador de potencia controlado

Country Status (5)

Country Link
US (1) US3274460A (enEXAMPLES)
BE (1) BE634737A (enEXAMPLES)
ES (1) ES289957A1 (enEXAMPLES)
GB (1) GB981270A (enEXAMPLES)
NL (1) NL294340A (enEXAMPLES)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3297921A (en) * 1965-04-15 1967-01-10 Int Rectifier Corp Controlled rectifier having shunted emitter formed by a nickel layer underneath an aluminum layer
SE311701B (enEXAMPLES) * 1966-07-07 1969-06-23 Asea Ab
GB1144917A (en) * 1966-12-02 1969-03-12 Ass Elect Ind Improvements in pressure contact semi-conductor devices
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction
US20130075891A1 (en) * 2011-09-23 2013-03-28 Formosa Microsemi Co., Ltd. Flip chip type full wave rectification semiconductor device and its manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751528A (en) * 1954-12-01 1956-06-19 Gen Electric Rectifier cell mounting
NL101297C (enEXAMPLES) * 1956-06-12
US3109983A (en) * 1957-05-02 1963-11-05 Glenn F Cooper Circuits with distributed characteristics
DE1057694B (de) * 1957-08-01 1959-05-21 Siemens Ag Gekapseltes Halbleitergeraet mit einem oder mehreren p-n-UEbergaengen
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
NL265766A (enEXAMPLES) * 1960-06-10
US3090873A (en) * 1960-06-21 1963-05-21 Bell Telephone Labor Inc Integrated semiconductor switching device

Also Published As

Publication number Publication date
US3274460A (en) 1966-09-20
GB981270A (en) 1965-01-20
BE634737A (enEXAMPLES) 1900-01-01
NL294340A (enEXAMPLES) 1900-01-01

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