ES2563045T3 - Célula solar múltiple monolítica - Google Patents

Célula solar múltiple monolítica Download PDF

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Publication number
ES2563045T3
ES2563045T3 ES10182110.6T ES10182110T ES2563045T3 ES 2563045 T3 ES2563045 T3 ES 2563045T3 ES 10182110 T ES10182110 T ES 10182110T ES 2563045 T3 ES2563045 T3 ES 2563045T3
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semiconductor mirror
cell
solar cell
multiple solar
thickness
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Matthias Meusel
Gerhard Strobl
Frank Dimroth
Andreas Bett
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Azur Space Solar Power GmbH
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Azur Space Solar Power GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Célula solar múltiple (10) monolítica compuesta esencialmente de elementos del grupo principal III y V del sistema periódico, en la que la célula solar múltiple (10) comprende tres subcélulas (12, 14, 16) de GaInP / GaInAs / Ge, en la que GaInP está configurada como célula superior y GaInAs como célula intermedia y Ge como célula inferior, caracterizada porque entre la célula intermedia y la célula inferior está dispuesto un espejo semiconductor (22) y la célula intermedia presenta un espesor reducido y el espesor dm es de 500 <= dm <= 2500 nm, porque el espejo semiconductor (22) presenta varias capas de índice de refracción y/o composición de material y/o espesor diferente uno de otro, y siendo el espesor d de las capas del espejo semiconductor (22) de 10 nm <= d <= 150 nm y el espejo semiconductor (22) se compone de n capas con 10 <= n <= 50 y la semianchura HWB del espejo semiconductor (22) es de 50 nm <= HWB <= 150 nm, y porque el espejo semiconductor presenta un grado de reflexión elevado en al menos una parte del rango de absorción espectral de la subcélula (16) o las subcélulas (12, 14, 16) dispuestas sobre el espejo semiconductor y un grado de transmisión elevado en el rango de absorción espectral de la subcélula (18) o subcélulas dispuestas por debajo del espejo semiconductor, y la célula solar múltiple está construida sobre un sustrato de Ge.

Description

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Claims (1)

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ES10182110.6T 2005-01-04 2005-12-23 Célula solar múltiple monolítica Active ES2563045T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005000767A DE102005000767A1 (de) 2005-01-04 2005-01-04 Monolithische Mehrfach-Solarzelle
DE102005000767 2005-01-04

Publications (1)

Publication Number Publication Date
ES2563045T3 true ES2563045T3 (es) 2016-03-10

Family

ID=35789087

Family Applications (3)

Application Number Title Priority Date Filing Date
ES15001551.9T Active ES2607501T3 (es) 2005-01-04 2005-12-23 Célula solar múltiple monolítica
ES14002885.3T Active ES2560441T3 (es) 2005-01-04 2005-12-23 Célula solar múltiple monolítica
ES10182110.6T Active ES2563045T3 (es) 2005-01-04 2005-12-23 Célula solar múltiple monolítica

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Application Number Title Priority Date Filing Date
ES15001551.9T Active ES2607501T3 (es) 2005-01-04 2005-12-23 Célula solar múltiple monolítica
ES14002885.3T Active ES2560441T3 (es) 2005-01-04 2005-12-23 Célula solar múltiple monolítica

Country Status (5)

Country Link
US (9) US8716593B2 (es)
EP (4) EP2927967B1 (es)
DE (1) DE102005000767A1 (es)
ES (3) ES2607501T3 (es)
WO (1) WO2006072423A1 (es)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005000767A1 (de) * 2005-01-04 2006-07-20 Rwe Space Solar Power Gmbh Monolithische Mehrfach-Solarzelle
US8759138B2 (en) 2008-02-11 2014-06-24 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US9331228B2 (en) 2008-02-11 2016-05-03 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US8093492B2 (en) 2008-02-11 2012-01-10 Emcore Solar Power, Inc. Solar cell receiver for concentrated photovoltaic system for III-V semiconductor solar cell
US10541349B1 (en) * 2008-12-17 2020-01-21 Solaero Technologies Corp. Methods of forming inverted multijunction solar cells with distributed Bragg reflector
US9018521B1 (en) * 2008-12-17 2015-04-28 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell
US20150357501A1 (en) * 2008-12-17 2015-12-10 Solaero Technologies Corp. Four junction inverted metamorphic solar cell
US9123849B2 (en) * 2009-04-24 2015-09-01 Light Prescriptions Innovators, Llc Photovoltaic device
DE102009019937A1 (de) * 2009-05-05 2010-11-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Stapelsolarzelle mit reflektierender Zwischenschicht, sowie Anordnung dieser Solarzellen
EP2261996B8 (en) * 2009-06-10 2011-10-19 Suinno Solar Oy High power solar cell
US9012771B1 (en) 2009-09-03 2015-04-21 Suncore Photovoltaics, Inc. Solar cell receiver subassembly with a heat shield for use in a concentrating solar system
US9806215B2 (en) 2009-09-03 2017-10-31 Suncore Photovoltaics, Inc. Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells
US20110220190A1 (en) * 2010-03-12 2011-09-15 Lee Rong-Ren Solar cell having a graded buffer layer
CN102194903B (zh) * 2010-03-19 2013-07-31 晶元光电股份有限公司 一种具有渐变缓冲层太阳能电池
WO2012029250A1 (ja) * 2010-08-31 2012-03-08 株式会社カネカ 並列光電変換積層デバイスとその直列集積光電変換装置
WO2012167282A1 (en) * 2011-06-02 2012-12-06 Brown University High-efficiency silicon-compatible photodetectors based on ge quantumdots and ge/si hetero-nanowires
US20130104983A1 (en) * 2011-10-31 2013-05-02 The Regents Of The University Of California Selective Reflector for Enhanced Solar Cell Efficiency
JP2013179297A (ja) * 2012-02-10 2013-09-09 Tokyo Institute Of Technology 光学制御層を有する太陽電池セル
CN102983210B (zh) * 2012-10-08 2015-07-15 天津蓝天太阳科技有限公司 GaAs体系四结太阳能电池的制备方法
US20140182667A1 (en) * 2013-01-03 2014-07-03 Benjamin C. Richards Multijunction solar cell with low band gap absorbing layer in the middle cell
WO2015120169A1 (en) 2014-02-05 2015-08-13 Solar Junction Corporation Monolithic multijunction power converter
EP2991124A1 (de) * 2014-08-29 2016-03-02 AZUR SPACE Solar Power GmbH Stapelförmige integrierte Mehrfachsolarzelle und Verfahren zur Herstellung einer stapelförmigen integrierten Mehrfachsolarzelle
DE102016005640A1 (de) 2015-05-07 2016-11-10 Solaero Technologies Corp. Invertierte Mehrfach-Solarzelle
DE102015006379B4 (de) 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
DE102015007326B3 (de) * 2015-06-12 2016-07-21 Azur Space Solar Power Gmbh Optokoppler
US11563133B1 (en) * 2015-08-17 2023-01-24 SolAero Techologies Corp. Method of fabricating multijunction solar cells for space applications
US20170054048A1 (en) 2015-08-17 2017-02-23 Solaero Technologies Corp. Four junction solar cell for space applications
US20170092800A1 (en) * 2015-08-17 2017-03-30 Solaero Technologies Corp. Four junction inverted metamorphic solar cell
US10270000B2 (en) 2015-10-19 2019-04-23 Solaero Technologies Corp. Multijunction metamorphic solar cell assembly for space applications
US10403778B2 (en) * 2015-10-19 2019-09-03 Solaero Technologies Corp. Multijunction solar cell assembly for space applications
EP3159942B1 (en) * 2015-10-19 2021-01-27 SolAero Technologies Corp. Multijunction metamorphic solar cell assembly for space applications
EP3159943B1 (en) * 2015-10-19 2021-01-06 SolAero Technologies Corp. Multijunction metamorphic solar cell for space applications
US10361330B2 (en) 2015-10-19 2019-07-23 Solaero Technologies Corp. Multijunction solar cell assemblies for space applications
US10256359B2 (en) 2015-10-19 2019-04-09 Solaero Technologies Corp. Lattice matched multijunction solar cell assemblies for space applications
US9935209B2 (en) 2016-01-28 2018-04-03 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US9985161B2 (en) 2016-08-26 2018-05-29 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
EP3171413A1 (en) * 2015-11-20 2017-05-24 SolAero Technologies Corp. Inverted metamorphic multijunction solar cell
DE102015016047A1 (de) * 2015-12-10 2017-06-14 Azur Space Solar Power Gmbh Mehrfach-Solarzelle
DE102015016822B4 (de) * 2015-12-25 2023-01-05 Azur Space Solar Power Gmbh Stapelförmige Mehrfach-Solarzelle
US10559705B1 (en) * 2016-05-11 2020-02-11 Solaero Technologies Corp. Multijunction solar cells having a graded-index reflector structure
DE102016208113B4 (de) 2016-05-11 2022-07-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mehrfachsolarzelle und deren Verwendung
US10263134B1 (en) 2016-05-25 2019-04-16 Solaero Technologies Corp. Multijunction solar cells having an indirect high band gap semiconductor emitter layer in the upper solar subcell
CN106206824B (zh) * 2016-09-05 2018-09-04 上海空间电源研究所 一种含有双谱段布拉格反射器的窄禁带多结太阳电池
US10700230B1 (en) 2016-10-14 2020-06-30 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US10636926B1 (en) 2016-12-12 2020-04-28 Solaero Technologies Corp. Distributed BRAGG reflector structures in multijunction solar cells
DE102017200700A1 (de) * 2017-01-18 2018-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mehrfachsolarzelle mit rückseitiger Germanium-Teilzelle und deren Verwendung
US11282979B2 (en) * 2017-03-03 2022-03-22 Solaero Technologies Corp. Distributed bragg reflector structures in multijunction solar cells
US10749053B2 (en) 2017-03-03 2020-08-18 Solaero Technologies Corp. Distributed Bragg reflector structures in multijunction solar cells
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
WO2019067553A1 (en) 2017-09-27 2019-04-04 Solar Junction Corporation SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER
US11205734B2 (en) 2018-02-22 2021-12-21 Alliance For Sustainable Energy, Llc Multijunction solar cells with graded buffer Bragg reflectors
EP3766104A1 (en) 2018-03-12 2021-01-20 Solar Junction Corporation Chirped distributed bragg reflectors for photovoltaic cells and other light absorption devices
DE102019000588A1 (de) * 2019-01-28 2020-07-30 Azur Space Solar Power Gmbh Stapelförmige Mehrfachsolarzelle
WO2020185528A1 (en) 2019-03-11 2020-09-17 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
US20200411708A1 (en) 2019-06-25 2020-12-31 The Boeing Company Solar cell design optimized for performance at high radiation doses
EP3799136B1 (de) * 2019-09-27 2023-02-01 AZUR SPACE Solar Power GmbH Monolithische mehrfachsolarzelle mit genau vier teilzellen
AU2020363647A1 (en) * 2019-10-10 2022-04-21 SunDensity, Inc. Optical coating for spectral conversion
JP2022551719A (ja) 2019-10-10 2022-12-13 サンデンシティ・インコーポレーテッド 増大した太陽エネルギー変換のための方法および装置
DE102020004170B4 (de) 2020-07-10 2023-10-19 Azur Space Solar Power Gmbh Stapelförmige monolithische Mehrfachsolarzelle
EP3965169B1 (de) 2020-09-07 2023-02-15 AZUR SPACE Solar Power GmbH Stapelförmige monolithische mehrfachsolarzelle
EP3965168B1 (de) 2020-09-07 2023-03-08 AZUR SPACE Solar Power GmbH Stapelförmige monolithische mehrfachsolarzelle

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091018A (en) * 1989-04-17 1992-02-25 The Boeing Company Tandem photovoltaic solar cell with III-V diffused junction booster cell
DE19723677A1 (de) * 1997-06-05 1998-12-10 Siemens Ag Optoelektronisches Halbleiterbauelement
JP4064592B2 (ja) 2000-02-14 2008-03-19 シャープ株式会社 光電変換装置
JP2001308354A (ja) * 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
GB0118150D0 (en) * 2001-07-25 2001-09-19 Imperial College Thermophotovoltaic device
US20030070707A1 (en) * 2001-10-12 2003-04-17 King Richard Roland Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device
WO2004017425A1 (en) * 2002-08-16 2004-02-26 Midwest Research Institute Multi-junction, monolithic solar cell with active silicon substrate
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
JP5248782B2 (ja) * 2004-01-20 2013-07-31 シリアム・テクノロジーズ・インコーポレーテッド エピタキシャルに成長させた量子ドット材料を有する太陽電池
US20050247339A1 (en) * 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
DE102005000767A1 (de) * 2005-01-04 2006-07-20 Rwe Space Solar Power Gmbh Monolithische Mehrfach-Solarzelle

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