ES2451066B1 - Sensor, device and radiation measurement method based on floating gate transistor - Google Patents

Sensor, device and radiation measurement method based on floating gate transistor Download PDF

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Publication number
ES2451066B1
ES2451066B1 ES201231486A ES201231486A ES2451066B1 ES 2451066 B1 ES2451066 B1 ES 2451066B1 ES 201231486 A ES201231486 A ES 201231486A ES 201231486 A ES201231486 A ES 201231486A ES 2451066 B1 ES2451066 B1 ES 2451066B1
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ES
Spain
Prior art keywords
sensor
floating gate
gate transistor
terminal
method based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES201231486A
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Spanish (es)
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ES2451066A1 (en
Inventor
Eugenio GARCIA MORENO
Eugeni ISERN RIUTORT
Miquel ROCA ADROVER
Rodrigo PICOS GAYA
Joan FONT ROSSELLO
Álvaro PINEDA GARCÍA
Joan CESARI BOHIGAS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INTEGRATED CIRCUITS MALAGA S L
Integrated Circuits Malaga Sl
Original Assignee
INTEGRATED CIRCUITS MALAGA S L
Integrated Circuits Malaga Sl
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Application filed by INTEGRATED CIRCUITS MALAGA S L, Integrated Circuits Malaga Sl filed Critical INTEGRATED CIRCUITS MALAGA S L
Priority to ES201231486A priority Critical patent/ES2451066B1/en
Publication of ES2451066A1 publication Critical patent/ES2451066A1/en
Application granted granted Critical
Publication of ES2451066B1 publication Critical patent/ES2451066B1/en
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Abstract

Sensor, dispositivo y método de medición de radiación basado en transistor de puerta flotante. El sensor comprende al menos un primer transistor de puerta flotante (10) con un primer (1) y un segundo (3) terminal, una puerta flotante (2), un substrato (6), una isla (4) del segundo terminal con el mismo tipo de dopado que el segundo terminal (3) pero de menor densidad de dopado, y una capa de óxido de puerta (5) entre la puerta flotante (2) y el substrato (6), donde tanto la puerta flotante (2) como la capa de óxido de puerta (5) se extienden sobre la isla (4) del segundo terminal hasta la zona de mayor dopado (3) del terminal. El sensor puede disponer de un área de extensión (7) para aumentar el área de detección de radiación. El sensor puede comprender un segundo transistor de puerta flotante (10a).Sensor, device and radiation measurement method based on floating gate transistor. The sensor comprises at least a first floating gate transistor (10) with a first (1) and a second (3) terminal, a floating gate (2), a substrate (6), an island (4) of the second terminal with the same type of doped as the second terminal (3) but of lower doped density, and a layer of door oxide (5) between the floating door (2) and the substrate (6), where both the floating door (2 ) as the oxide layer of door (5) extends over the island (4) of the second terminal to the area of greater doped (3) of the terminal. The sensor may have an extension area (7) to increase the radiation detection area. The sensor may comprise a second floating gate transistor (10a).

Description

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Claims (1)

imagen1image 1
ES201231486A 2012-09-26 2012-09-26 Sensor, device and radiation measurement method based on floating gate transistor Active ES2451066B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES201231486A ES2451066B1 (en) 2012-09-26 2012-09-26 Sensor, device and radiation measurement method based on floating gate transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201231486A ES2451066B1 (en) 2012-09-26 2012-09-26 Sensor, device and radiation measurement method based on floating gate transistor

Publications (2)

Publication Number Publication Date
ES2451066A1 ES2451066A1 (en) 2014-03-26
ES2451066B1 true ES2451066B1 (en) 2015-01-20

Family

ID=50336623

Family Applications (1)

Application Number Title Priority Date Filing Date
ES201231486A Active ES2451066B1 (en) 2012-09-26 2012-09-26 Sensor, device and radiation measurement method based on floating gate transistor

Country Status (1)

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ES (1) ES2451066B1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6141243A (en) * 1996-11-12 2000-10-31 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Sensor element
US6690056B1 (en) * 1999-04-06 2004-02-10 Peregrine Semiconductor Corporation EEPROM cell on SOI

Also Published As

Publication number Publication date
ES2451066A1 (en) 2014-03-26

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