ES2269541T3 - DEVICE AND PROCEDURE FOR DIRECTED APPLICATION OF A DEPOSIT MATERIAL ON A SUBSTRATE. - Google Patents

Abstract

Targeted application of deposition material on a substrate comprises feeding the deposition material through a filter (90) having several channel-like individual structures (60) onto the substrate (30). The deposition material is applied at an angle to the substrate surface, in which the angle remains constant during the process. An Independent claim is also included for a device for targeted application of deposition material on a substrate comprising a filter positioned between a source of the deposition material and the substrate, and units for applying the deposition material at a constant angle to the substrate surface. Preferred Features: The individual structures of the filter have a square, rectangular or circular cross-section.

Description

Device and procedure for application directed of a deposit material on a substrate.

The invention relates to a device for the targeted application of deposit material on a substrate, in special to focus the projected flow over an angular area close in a vapor phase tank installation.

The invention further relates to a procedure for the targeted application of a deposit material on a substrate.

In the industry there is a need for devices for directed coating of substrates for different coating techniques and procedures. Especially, some applications require special deposit facilities in vapor phase (PVD, Physical Vapor Deposition), which are in conditions of focusing the projected material from a target on a narrow angular area, and to apply on a substrate following different angles

Similar cathodic spraying or spraying facilities are usually designed so that a maximum amount of projected material can be deposited in the shortest time. The distribution of the projected material on the substrate should be as homogeneous as possible here. To achieve this, for example, diaphragms that geometrically limit the projected flow are used. However, similar diaphragms limit the projected flow only in the outside areas, while the projected jets are strongly scattered just like
before.

From publication for request information German patent 198 19 785 known as a spray cathode according to the magnetron principle, by which a field is generated magnetic to increase the projected ratio transversely with respect to the direction of movement of the cargo carriers.

From publication for request information German patent 195 06 799 a device of projection for the manufacture of thin layers, in which install an electronic control device with permeability geometric sufficiently high in the space between the plasma and the substrate for the control of the projected particles. Through This electronic control device can influence the movement of projected and charged target particles positively

European patent application EP 0 509 305 describes a procedure for depositing conductive tracks in cavities with great dimensional relationship. The dimensional relationship is determined by the ratio of depth to width of the cavity. A deposit procedure is used for the deposit reactive projection through a collimator, where the collimator presents a dimensional relationship similar to depth, over whose ground the conductor is applied.

US Patent 4,776,868 discloses a procedure for the manufacture of elevations convex on a substrate, where elevations are transformed into glasses. The elevations are applied so that in a vacuum deposits a vapor of some substance from a source and leads to through a mask with openings, before the steam is find with the substrate. The thickness of the mask is chosen from so that a steam cone convergently reaches an opening and it comes out divergently and meets the substrate.

From US Patent 3,627,569 a procedure and a device for the deposit of steam in thin films, for which the thickness profile and the flat area to be covered are strongly controlled by a device directional. The directional device consists of several elongated channels to channel the steam between the source and a substratum. This causes a uniform distribution and orientation. of the steam flow.

U.S. Patent Document 5,415,753 describes a perforated diaphragm, which lies between a target projection and a substrate to be coated with the blank material. The perforated diaphragm is essentially configured so that he does not act directionally because of a small relationship dimensional. The perforated diaphragm openings capture a certain proportional part of the projected particles, while other projected particles are allowed to pass for the deposit on a substrate. The device causes the proportion of perforated diaphragm deposit is less than the proportion of deposit of the projection process.

US Patent Document 6,168,832 discloses a procedure for vaporization application in vacuum of one or several layers on a substrate, where the layer thickness distribution is controlled by a mask three-dimensional, which is positioned between the substrate and the source steam. In an example of embodiment described rotate both the substrate as much as the mask, where the mask is round and It has grooves arranged in a fan shape.

US patent document 6,210,540 describes a mask that is positioned on the center of a source of deposit, to limit the angle of flow of the source. Before the mask rotates a device whose contour is arranged a substrate to be coated. Through the mask it shields the area of the device that should not be exposed to the deposit. The device rotation causes a surface coating sides of the substrate following changing angles.

From European patent application EP 0 717 432 a device is known for the projection of a material on a substrate, in which a tube is placed on the target of projection and the substrate to be coated. The tube causes zones selected from the material flow of the target do not reach the substratum.

Japanese patent application JP 07 113 172 describes a collimator that is in a device for the application of a thin film on a substrate, presenting the collimator a plurality of uniformly arranged grooves. In addition, the grooves run at an angle to the surface of the substrate and the material jets deposited by a source above the grooves pass.

Japanese patent application JP 10 121 234 also describes a projection device with a collimator that should eliminate or reduce the asymmetry of the formation of movie.

In addition, from the Japanese patent application JP 1 20 139 a collimator with several openings is known, which is positioned between the projection target and a insert. The interior surfaces of the openings are configured with sawtooth shape with pointed end pieces (grooves in the form of a crown).

The objective of the invention is to configure a generic device so as to make an application possible directed and limited to a narrow angular area of material of deposit on a substrate.

The objective of the invention is to configure a generic device so as to make an application possible directed and limited to a narrow angular area of material of deposit on a substrate.

According to the invention, this objective is met by a method according to the object of claim 1. In addition, the objective is solved by a device according to the object of the claim 2. Advantageous variants of the device according to the The invention follows from claims 3-13.

According to the invention, the generic device is equipped with a filter that focuses the deposit material to apply over a narrow angular area. In particular, a device projection is equipped with a filter that is installed between the projection target and substrate, so that the flow of Projected particles are focused and directed through it.

The filter according to the invention is formed by several individual channel-shaped structures. Targeting of the flow of projected particles is done because of the geometric dimensions of individual filter structures, where the filter design is based on geometric considerations of the jet. In the projection process it is formed on the target a projection ditch in the form of an oval cavity from which target particles are projected. When only one flow arrives of projected particles, scattered in many directions, of a point source of a similar ditch projection to a structure individual filter according to the invention, only the projected particles that have reached an angular area? determined. This maximum opening angle? = 2 x? it follows from the relation tan? = B / L, where B represents the width and L the length of the individual filter structure. The projected particles, which reach the structure outside this angular zone, are deposited on the interior walls of the structure and, consequently, are removed. The projected flow that comes out is thus limited to a narrow angular zone, which can adjust by the dimensions of the filter structure.

The filter consists of several structures individual, which are preferably arranged next to others, so that the main part of the projection flow, which leaves the target projection ditch, can be directed and focus through the filter structures.

Individual filter structures can be shaped differently. In addition, the filter according to the invention is used not only for projection procedures, but also for other coating procedures, in which the Deposit material should be directed and focused on an area narrow angle

Other advantages, particularities and variants suitable of the invention are deduced from the claims dependents and the following representation of the examples of preferred embodiment by the figures.

Of the figures show:

Fig. 1 the state of the known technique of diaphragms for deposit facilities in steam phase;

Fig. 2 the influence of an individual structure of a filter on the flow direction projection of a point source;

Fig. 3 the effect of a multiple structure of a filter on the flow direction projection of a spray cathode;

Fig. 4 the maximum angle opening of the filtered projection flow;

Fig. 5, 6, 7, 8 settings different from filter structures;

Fig. 9, 10 examples of realization for processes in line with inclined cathodes;

Fig. 11, 12 examples of realization with horizontal cathodes and inclined projected plasma Y

Fig. 13 an example of realization with rotating cathode.

The drawing in fig. 1 represents simplified state of the art for installations of cathodic spraying (vapor phase storage facilities). The installation 10 comprises in this respect a cathode 20, an anode 21 and a plasma that was activated between both electrodes. In front of cathode forms a voltage drop, which accelerates the particles positively charged plasma, so that they are with the projection target 22 located in front of the cathode. There the individual atoms or plasma particles take out molecules that are then scattered throughout addresses on the substrate 30, and there they configure a layer, whose composition corresponds to the composition of the target. In the process projection a projection ditch is formed on white 22 or, so named, "racetrack" in the form of a cavity with oval path, since the particles do not project from the the entire surface of the target, but only in the area of the oval structure Two sources are represented in the drawing point 40 of a similar projection ditch on a target, from which particles are projected in all directions.

In addition, the cathodes and facilities of projection of this type are sized so that it is deposited, in the shortest time, a maximum amount of projected material. By consequently, the coating of the substrate 30 is performed the most homogeneously possible, the projected flow is conducted, for example, through an aperture of a diaphragm 50 on a substrate 30. However, from the drawing it can be seen that by means of a diaphragm it is not possible a focused and directed flow of projection, since the projection flow still spreads strongly and is only prevented the dispersion in the outer zone.

Therefore, the invention provides for equipping a device for applying deposit material with a filter, which focuses the deposit material in an angular area narrow. For devices it can be any type of facilities in which the deposit material is applied in the form of particles on a substrate. For example, it may be steam, atomization and / or tank deposition facilities C steam tank.

Therefore, especially the invention provides for equipping a projection or sputtering system with a filter, which limits the projection flow to an angular area narrow. In addition, the filter is installed between at least one cathode of spray with projection target and the substrate to be coated, of way that the flow of projected particles is conducted through The filter structure.

The design of the filter structure is based on geometric considerations of jet where the dimensions geometric shapes are chosen so that the addresses of projection outside a certain angular area and thus limits the jet projected on a corresponding angular zone. Of the drawing in fig. 2 the effect of an individual structure can be deduced of a similar filter in a point source. If the structure individual 60 is installed in the projected jets, which start from a point source 40 of a target, filters out the jets that spread outward, so that the projected jets, which they leave the filter structure, they are limited in one area angular? determined. The jets projected out of this angular zone are deposited on the interior walls of the structure and, consequently, they are eliminated.

From fig. 3 the effect of a multiple structure of a filter according to the invention in the direction of projected flow of a target 22. In addition, the filter conforms to from several individual structures arranged next to others, and this multiple structure 90 of such a filter is found in projected jets from various point sources 40 of a target 22. For the point sources represented in the drawing is about point sources in the projection ditch of the white 22. Multiple structure of filter 90 filters out unwanted projection directions, and thus limits the area angle of all projected particle jets entering through multiple structure. Behind the filter originates a directed projection flow, which makes it possible to apply the material of deposit directly following an angle on a substratum.

From the drawing in fig. 4 can be deduced geometric relationships of the individual structures of a filter. In addition, it is preferably structures shaped channel. The maximum opening angle of the filtered flow of projection depends on the geometry of the individual structure, where in the embodiment shown, a channel structure with rectangular cross section. The angle maximum aperture? = 2 x? is determined here by the ratio of opening width B to the length of the structure L, since? can be calculated with the formula so α = B / L. The opening angle? Is found typically in the order of magnitude from 10 to 120 degrees.

The length L is given by the length of the structure channel, while width B is determined by the widest cross section of the structure. Width B It is preferably in the order of magnitude from 2 to 25 mm, while the length L can be calculated based on the angle desired opening according to the equations tan? = B / L and β = 2 x α.

The conformation of the structures can be chosen according to the purpose, and therefore, is not limited to a rectangular cross section as is depicted in fig. 8. In fig. 5, 6 and 7 are represented Examples of realization of filter structures with different cross sections. In addition, it can be, for example, honeycomb structures with square cross sections or rounded. When deemed convenient, they can be performed also different cross sections within a structure multiple.

When a channel with cross section is chosen round, the diameter should be taken as conveniently of the Chanel. When a cross section is chosen in the form of panel, the widest cross section should be taken as width of the structure. The number of individual structures within A filter depends on the application and the angular area to be performed. Typical numbers for, for example, square channels within a structure are in an order of magnitude of 1,600 / m2 to 250,000 / m2.

For the formation of filter structures are appropriate multiple materials that meet the requirements each Once requested on them. For this they have stability, resistance Chemical and physical and good cleaning possibility. As materials suitable, for example, plastics, alloys of aluminum, iron or steel alloys, of which the filter is formed by at least 80%. The thickness of nerve material it is preferably chosen so that the structure stability, but do not originate shading too big. Typical nerve thicknesses are found in the order of magnitude from 0.05 mm to 2 mm.

In addition, it has been proven convenient use structures that make cleaning possible for the filter simple. This is possible in fig. 8, for example, in sheet-shaped structures, in which the cross section rectangular of the individual structures is configured very elongated and only reinforce the structure some supports transversal. So you can easily clean the walls interiors of the structures, so that a cleaning device, like a brush, depending on the length it moves through the section cross. In case the application only requires that the focus of particle jets is performed only in the transverse direction with respect to individual structures, are sufficient similar structures with sections in the form of sheets and can be cleaned with reduced costs. Mainly, the  structure should not present if possible any difficult area of clean. When mechanical cleaning is not possible, for example, by brushes or jets of earth, can be used as processes of cleaning, for example, corrosion procedures. Others Cleaning procedures are equally possible. The kind of cleaning is conveniently oriented according to the type of material filter, the conformation of the filter and the target material. If not It is planned to clean the filter, it must be properly formed of a material that can be easily removed and with low cost in union with the projected material.

To make a specific address of committed during the screening procedure, an example of Especially preferred embodiment of the invention envisages placing the Spray cathode with white projection, and structure of filter located behind in the projection direction following an angle towards the substrate. A similar construction It is represented in fig. 9. In addition, it is a process in line, in which a substrate 30 is conducted through at least two steam tank storage facilities 10. Both cathodes 20 with corresponding projection targets 22, as well as Filter structures 90 meet at an angle? with respect to the surface of the substrate. The filters focus each the projected flow of the cathode in a particular narrow area, so that a directed flow of projection originates. The directed deposition resulting from projected material on a substrate is made following an adjusted γ angle, which is determined by cathode orientation and filter structure. Changes in orientation also change the angle of application.

The substrate passes a certain distance with a speed in the order of magnitude of 0.1 to 12 m / min next to the cathode with the filter, so that the substrate according to the Requirements are coated with deposit material. The Projection or deposit ratios thus performed depend strongly from the edge conditions, such as the projection power, projection pressure and material White. In addition, there is an influence on the proportion of projection if the projection regime is reactive and blank ceramic or metallic Typical deposit ratios are found in a similar device in the order of magnitude of 0.1 nm / min at 1,000 nm / min

In an embodiment especially preferred of the invention differentiate the angles adjusted in the vapor phase 10 storage facilities, so that they can be carried out in the corresponding stations procedures of Differently directed projection. In the first season it It covers the substrate at an angle? while the deposit at the second station is done following an angle \ phi. This may be necessary, for example, for manufacturing of series circuits, which automatically adjust, of layers thin, in which a substrate is exposed to deposits of material by layers following different angles of incidence.

In fig. 10 another process is represented in line, in which the individual cathodes 20 and whites of projection 22 are positioned at an angle? relative to the substrate 30 continuous, on the contrary, the filter structures 90 are installed so that they preferably run in parallel to the surface of the substrate. The filter can be naturally arranged here also at any angle with respect to the substrate surface. Individual structures 60 of the filter are configured so that the channels are find again following the angle γ relative to the substrate 30. Thus a directed application of projected material following a certain angle. The angle corresponding can be changed by the orientation of the cathode 20 and the change of individual structures 60 of the filter.

In fig. 11 and fig. 12 are represented other embodiments in which cathodes are found at any angle to the substrate and the projected plasma with the projection jets you find an angle with respect to the cathode In fig. 11 is cathode 20, for example, in parallel to the surface of the substrate 30, while the projected jets are deflected so that they form a field which is inclined with an angle \ omega. This sloping field is drives through a filter 90 and its projected jets are driven also with an angle? on the substrate.

In fig. 13 another example of embodiment in which rotating cathodes with material of the 110 white tube-shaped. Inside this white tube is they find magnets 120 and a water cooling. By means of the White rotation evenly flattens the white material. When the magnets are now rotated, as represented in the drawing, the plasma is also rotated, and the projected particles are deposited at an angle? relative to the substrate 30. The filter position 90 with individual filter structures can be chosen again at will.

The deviation of the particles projected by collisions depends on the length of free travel of the projected particles, and consequently, of the pressure of projection in chamber 100. The projection pressure has also an influence on the projection ratio of form that for the corresponding application must find a optimum.

The contribution according to the invention of a structure filter is not limited to the projection procedure in a steam tank installation, but more can be applied well also to other procedures, in which a targeted application of deposit material on a substrate. Other application forms are, for example, sublimation in space closed, thermal vaporization, as well as atomization.

Reference List

10

               Steam phase tank installation

twenty

               Spray cathode

twenty-one

               Anode

22

               Projection target

30

               Substratum

40

               Spot source of a projection target

fifty

               Diaphragm

60

               Individual structure of a filter

90

               Multiple structure of a filter

100

          Chamber of a vapor phase tank installation

110

          Target material of a rotating cathode

120

     Magnet

Claims (13)

1. Directed application procedure of deposit material on a substrate in a vapor phase deposit installation, in which the jets of particles projected by a projection target (22) of a spray cathode (20) are directed on the substrate (30) through a filter (90) with several individual structures (60) in the form of a channel, where the flow of projected particles is limited to a narrow angular area, characterized in that the material jets are applied inside a device in a first station following an angle? and in a second station following an angle?, the angles of incidence being different from each other. 2. Device for the directed application of deposit material on a substrate following an angle in a vapor phase deposit installation, in which, at least one spray cathode (20) with a projection target (22) and the substrate (30) is installed a filter (90) with several individual structures (60) in the form of a channel, where the flow of projected particles is limited to a narrow angular area, characterized in that the device has means for applying deposit material following an angle? in a first station, and application of a deposit material following an angle? in a second station, the angles of incidence being different from each other. Device according to claim 2, characterized in that both the spray cathode (20) and the projection target (22), as well as the filter (90) are positioned at an angle γ with respect to the surface of the substrate (30) . Device according to claim 2, characterized in that the spray cathode (20) with the projection target (22) is positioned at an angle γ with respect to the surface of the substrate (30), while the filter (90) runs in parallel with respect to the surface of the substrate (30), and the channels (60) of the filter run at an angle γ with respect to the surface of the substrate (30). Device according to claim 2, characterized in that the spray cathode with the projection target (22) is positioned at an angle γ with respect to the surface of the substrate (30), the filter (90) runs with another angle with respect to the substrate surface, and the channels (60) of the filter again run at an angle? relative to the surface of the substrate (30). Device according to claim 2, characterized in that the particle jets projected by the spray cathode (20) are deposited at an angle? Relative to the cathode, the filter (90) is installed in parallel or at an angle to the surface of the substrate, and the individual structures (60) of the filter (90) again run at an angle? relative to the surface of the substrate. Device according to one or more of claims 2 to 6, characterized in that for the spray cathode it is a rotating cathode, whose magnets (120) are adjusted so that the jets of projected particles are deposited at an angle? with respect to the surface of the substrate. Device according to one or more of claims 2 to 7, characterized in that the filter (90) is formed by several individual structures (60) in the form of a channel with square, round, rectangular and / or honeycomb cross sections. Device according to claim 8, characterized in that the width B of the channels (60) of the filter structure (90) is in the order of magnitude from 2 mm to 25 mm, the width being determined by the cross section plus length of individual structures (60). Device according to one or more of claims 2 to 9, characterized in that the opening angle? Of the individual structures (60) can be calculated by the equations? = 2 x? And tan? = B / L. 11. Device according to claim 10, characterized in that the opening angle β is in the order of magnitude from 10 ° to 120 °. 12. Device according to one or more of claims 2 to 11, characterized in that the number of individual structures (60) in the form of a filter channel (90) is in the order of magnitude of approximately 1,600 / m2 at 250.00 / m2. 13. Device according to one or more of claims 2 to 12, characterized in that the amount of deposit of the device with filter is in the order of magnitude of 0.1 nm / min to 1,000 nm / min.