ES2178923A1 - Critical current density improvement in high-temperature superconductors - Google Patents
Critical current density improvement in high-temperature superconductorsInfo
- Publication number
- ES2178923A1 ES2178923A1 ES200001936A ES200001936A ES2178923A1 ES 2178923 A1 ES2178923 A1 ES 2178923A1 ES 200001936 A ES200001936 A ES 200001936A ES 200001936 A ES200001936 A ES 200001936A ES 2178923 A1 ES2178923 A1 ES 2178923A1
- Authority
- ES
- Spain
- Prior art keywords
- layer
- current density
- superconducting
- base substrate
- composite structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 title 1
- 239000002131 composite material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000696 magnetic material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F6/00—Superconducting magnets; Superconducting coils
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0828—Introducing flux pinning centres
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
The composite structure characterized in that it presents a superconducting-current density higher than 10<10> A/m<2>, said composite structure comprising: a first layer of magnetic material with uniaxial anisotropy a second barrier-sheet or insulating layer and a third layer of high-temperature superconducting material these layers being arranged, in the described order, on a base substrate. The process for the preparation of a composite structure that presents a superconducting-current density higher than 10<10> A/m<2>, comprises: a) the epitaxial growth of a first layer of magnetic material, a second barrier sheet layer, and a third layer of superconducting material, on a base substrate b) the heating of the base substrate to a temperature ranging from 650 DEG C to 900 DEG C before carrying out the growth of each one of the three layers of step a) and c) the application of an oxygen partial pressure during the growth of each layer.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES200001936A ES2178923B1 (en) | 2000-07-31 | 2000-07-31 | IMPROVEMENT OF CRITICAL CURRENT DENSITY IN HIGH TEMPERATURE SUPERCONDUCTING MATERIALS AND PROCEDURE FOR OBTAINING IT. |
AU2001276580A AU2001276580A1 (en) | 2000-07-31 | 2001-07-27 | Critical current density improvement in high-temperature superconductors |
PCT/IB2001/001347 WO2002011215A1 (en) | 2000-07-31 | 2001-07-27 | Critical current density improvement in high-temperature superconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES200001936A ES2178923B1 (en) | 2000-07-31 | 2000-07-31 | IMPROVEMENT OF CRITICAL CURRENT DENSITY IN HIGH TEMPERATURE SUPERCONDUCTING MATERIALS AND PROCEDURE FOR OBTAINING IT. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES2178923A1 true ES2178923A1 (en) | 2003-01-01 |
ES2178923B1 ES2178923B1 (en) | 2004-05-01 |
Family
ID=8494522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES200001936A Expired - Fee Related ES2178923B1 (en) | 2000-07-31 | 2000-07-31 | IMPROVEMENT OF CRITICAL CURRENT DENSITY IN HIGH TEMPERATURE SUPERCONDUCTING MATERIALS AND PROCEDURE FOR OBTAINING IT. |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001276580A1 (en) |
ES (1) | ES2178923B1 (en) |
WO (1) | WO2002011215A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4300520A1 (en) * | 2022-06-28 | 2024-01-03 | Airbus | Improved inductive component for electric or hybrid aircraft |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2523647B2 (en) * | 1987-06-19 | 1996-08-14 | 株式会社日立製作所 | Metal oxide superconducting thin film |
JP2733368B2 (en) * | 1990-07-04 | 1998-03-30 | 松下電工株式会社 | Superconducting thin film and method for producing the same |
-
2000
- 2000-07-31 ES ES200001936A patent/ES2178923B1/en not_active Expired - Fee Related
-
2001
- 2001-07-27 WO PCT/IB2001/001347 patent/WO2002011215A1/en active Application Filing
- 2001-07-27 AU AU2001276580A patent/AU2001276580A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2523647B2 (en) * | 1987-06-19 | 1996-08-14 | 株式会社日立製作所 | Metal oxide superconducting thin film |
JP2733368B2 (en) * | 1990-07-04 | 1998-03-30 | 松下電工株式会社 | Superconducting thin film and method for producing the same |
Also Published As
Publication number | Publication date |
---|---|
ES2178923B1 (en) | 2004-05-01 |
WO2002011215A1 (en) | 2002-02-07 |
AU2001276580A1 (en) | 2002-02-13 |
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Legal Events
Date | Code | Title | Description |
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EC2A | Search report published |
Date of ref document: 20030101 Kind code of ref document: A1 |
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