ES2140812T3 - Metodo y sistema de electrodos para excitacion de un plasma. - Google Patents

Metodo y sistema de electrodos para excitacion de un plasma.

Info

Publication number
ES2140812T3
ES2140812T3 ES96610018T ES96610018T ES2140812T3 ES 2140812 T3 ES2140812 T3 ES 2140812T3 ES 96610018 T ES96610018 T ES 96610018T ES 96610018 T ES96610018 T ES 96610018T ES 2140812 T3 ES2140812 T3 ES 2140812T3
Authority
ES
Spain
Prior art keywords
electrodes
electrode
math
excitation
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96610018T
Other languages
English (en)
Inventor
Kristian Glejbol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NKT Research Center AS
Original Assignee
NKT Research Center AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NKT Research Center AS filed Critical NKT Research Center AS
Application granted granted Critical
Publication of ES2140812T3 publication Critical patent/ES2140812T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

UN METODO PARA LA EXCITACION DE UN PLASMA, CARACTERIZADO POR QUE COMPRENDE DE LOS PASOS DE SOMETER UN GAS A UNA CAMPO ELECTRICO GENERADO POR UN SISTEMA DE ELECTRODOS QUE COMPRENDE N ELECTRODOS, SIENDO N UN NUMERO ENTERO SUPERIOR O IGUAL A 3, PREFERENTEMENTE ENTRE 3 Y 30, ESTANDO CADA UNO DE N ELECTRODOS CONECTADOS A UNO DE LAS SIGUIENTES TENSIONES CA. DONDE F ES UNA FRECUENCIA QUE VA DE 10 A 10000 HZ, PREFERENTEMENTE 30 A 200 HZ MAS, PREFERENTEMENTE 50 A 60 HZ, U{SUB,0} ES UNA TENSION QUE VA DE 50 A 10000 V, ESTANDO AL MENOS UN ELECTRODO CONECTADO A U{SUB,R}, ESTANDO AL MENOS UN ELECTRODO CONECTADO A U{SUB,S}, Y ESTANDO AL MENOS UN ELECTRODO CONECTADO A U{SUB,T}. LA INVENCION TAMBIEN SE REFIERE A UN SISTEMA DE ELECTRODOS PARA LLEVAR A CABO EL METODO Y EL USO DEL SISTEMA DE ELECTRODOS.
ES96610018T 1995-05-02 1996-05-02 Metodo y sistema de electrodos para excitacion de un plasma. Expired - Lifetime ES2140812T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO951682A NO302060B1 (no) 1995-05-02 1995-05-02 Fremgangsmåte og elektrodesystem for eksitering av et plasma

Publications (1)

Publication Number Publication Date
ES2140812T3 true ES2140812T3 (es) 2000-03-01

Family

ID=19898163

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96610018T Expired - Lifetime ES2140812T3 (es) 1995-05-02 1996-05-02 Metodo y sistema de electrodos para excitacion de un plasma.

Country Status (7)

Country Link
US (1) US5935455A (es)
EP (1) EP0741404B1 (es)
AT (1) ATE188805T1 (es)
DE (1) DE69606087T2 (es)
DK (1) DK0741404T3 (es)
ES (1) ES2140812T3 (es)
NO (1) NO302060B1 (es)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO304234B1 (no) * 1996-06-28 1998-11-16 Nkt Res Center As FremgangsmÕte for modifisering av overflaten av fast polymersubstrat, det derved oppnÕdde produktet samt anvendelse av fremgangsmÕten
US6628084B1 (en) 1999-01-20 2003-09-30 Nkt Research Center A/S Method and apparatus for the excitation of a plasma
KR100320197B1 (ko) * 1999-08-21 2002-01-10 구자홍 직류전원 플라즈마중합 연속처리장치
WO2001036703A1 (en) * 1999-11-19 2001-05-25 Nano Scale Surface Systems, Inc. System and method for depositing inorganic/organic dielectric films
JP2003532568A (ja) * 2000-05-10 2003-11-05 エヌ・ケー・ティー リサーチ アクティーゼルスカブ 無機基材の表面を有機物質で被覆する方法及び得られた生成物
EP1334646A2 (en) * 2000-10-27 2003-08-13 NKT Research A/S A method and an apparatus for excitation of a plasma
CA2436253A1 (en) * 2000-12-29 2002-07-11 Bjorn Winther-Jensen A method for the preparation of a substrate for immobilising chemical compounds and the substrate and the use thereof
US20050061444A1 (en) * 2003-09-24 2005-03-24 Yoshiaki Noda Plasma cleaning device
US7232975B2 (en) * 2003-12-02 2007-06-19 Battelle Energy Alliance, Llc Plasma generators, reactor systems and related methods
WO2006074666A2 (en) * 2005-01-17 2006-07-20 Nanon A/S A method of coating a polymer surface with a polymer containing coating and an item comprising a polymer coated polymer
US7741577B2 (en) * 2006-03-28 2010-06-22 Battelle Energy Alliance, Llc Modular hybrid plasma reactor and related systems and methods
US20080271723A1 (en) * 2006-05-17 2008-11-06 Cowden Ralph A Anti global warming energy power system and method
US8536481B2 (en) 2008-01-28 2013-09-17 Battelle Energy Alliance, Llc Electrode assemblies, plasma apparatuses and systems including electrode assemblies, and methods for generating plasma

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029995A (en) * 1976-01-06 1977-06-14 Onoda Cement Company, Ltd. Apparatus for producing charged particles
JPS6244576A (ja) * 1984-09-14 1987-02-26 Anelva Corp 多電極放電反応処理装置
US5452177A (en) * 1990-06-08 1995-09-19 Varian Associates, Inc. Electrostatic wafer clamp
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
JPH0645096A (ja) * 1992-03-31 1994-02-18 Matsushita Electric Ind Co Ltd プラズマ発生方法およびその装置
KR970005035B1 (ko) * 1992-03-31 1997-04-11 마쯔시다덴기산교 가부시기가이샤 플라즈마발생방법 및 그 장치
US5404079A (en) * 1992-08-13 1995-04-04 Matsushita Electric Industrial Co., Ltd. Plasma generating apparatus
JPH07226395A (ja) * 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
DE69512371T2 (de) * 1994-05-13 2000-04-06 Applied Materials, Inc. Magnetisch verbesserte multiple kapazitive plasmagenerationsvorrichtung und verfahren
US5535906A (en) * 1995-01-30 1996-07-16 Advanced Energy Industries, Inc. Multi-phase DC plasma processing system
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
US5801489A (en) * 1996-02-07 1998-09-01 Paul E. Chism, Jr. Three-phase alternating current plasma generator

Also Published As

Publication number Publication date
EP0741404B1 (en) 2000-01-12
EP0741404A1 (en) 1996-11-06
NO951682L (no) 1996-11-04
DE69606087T2 (de) 2000-09-14
DK0741404T3 (da) 2000-05-01
DE69606087D1 (de) 2000-02-17
ATE188805T1 (de) 2000-01-15
NO951682D0 (no) 1995-05-02
NO302060B1 (no) 1998-01-12
US5935455A (en) 1999-08-10

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