ES2132433T3 - RADIATION DETECTOR. - Google Patents
RADIATION DETECTOR.Info
- Publication number
- ES2132433T3 ES2132433T3 ES94931057T ES94931057T ES2132433T3 ES 2132433 T3 ES2132433 T3 ES 2132433T3 ES 94931057 T ES94931057 T ES 94931057T ES 94931057 T ES94931057 T ES 94931057T ES 2132433 T3 ES2132433 T3 ES 2132433T3
- Authority
- ES
- Spain
- Prior art keywords
- load
- door
- mosfet transistor
- radiation
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title abstract 3
- 230000005865 ionizing radiation Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/26—Measuring radiation intensity with resistance detectors
Abstract
SE PRESENTA UN METODO PARA DETECTAR RADIACION IONIZANTE PERMITIENDO QUE LA RADIACION AFECTE A LA SUPERFICIE DE UNA PUERTA FLOTANTE (13) DE UN TRANSISTOR MOSFET (10) A TRAVES DE UN ESPACIO DE AIRE O DE GAS. PARA ESTE PROPOSITO, SE FORMA UN AREA DESCUBIERTA (17) SOBRE LA SUPERFICIE DE LA PUERTA FLOTANTE DEL TRANSISTOR MOSFET QUE FORMA EL DETECTOR. EL TRANSISTOR MOSFET SE UTILIZA DE MANERA QUE SE FORME UNA CARGA SOBRE SU PUERTA FLOTANTE, LA CARGA CAMBIA COMO RESULTADO DE LA RADIACION IONIZANTE A LA QUE EL TRANSISTOR ESTA EXPUESTO. LA DOSIS DE RADIACION SE DETERMINA POR EL CAMBIO QUE TIENE LUGAR EN LA CARGA SOBRE LA PUERTA.A METHOD IS PRESENTED TO DETECT IONIZING RADIATION BY ALLOWING RADIATION TO AFFECT THE SURFACE OF A FLOATING DOOR (13) OF A MOSFET TRANSISTOR (10) THROUGH AN AIR OR GAS SPACE. FOR THIS PURPOSE, AN UNCOVERED AREA (17) IS FORMED ON THE SURFACE OF THE FLOATING DOOR OF THE MOSFET TRANSISTOR FORMING THE DETECTOR. THE MOSFET TRANSISTOR IS USED SO THAT A LOAD IS FORMED ON ITS FLOATING DOOR, THE LOAD CHANGES AS A RESULT OF THE IONIZING RADIATION TO WHICH THE TRANSISTOR IS EXPOSED. THE RADIATION DOSE IS DETERMINED BY THE CHANGE THAT OCCURS IN THE LOAD ON THE DOOR.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI934784A FI934784A0 (en) | 1993-10-28 | 1993-10-28 | STRAOLNINGSDETEKTOR |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2132433T3 true ES2132433T3 (en) | 1999-08-16 |
Family
ID=8538869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES94931057T Expired - Lifetime ES2132433T3 (en) | 1993-10-28 | 1994-10-28 | RADIATION DETECTOR. |
Country Status (14)
Country | Link |
---|---|
US (1) | US5739541A (en) |
EP (1) | EP0760957B1 (en) |
JP (1) | JP3142295B2 (en) |
CN (1) | CN1040363C (en) |
AT (1) | ATE178719T1 (en) |
AU (1) | AU7995794A (en) |
CA (1) | CA2175224C (en) |
DE (1) | DE69417770T2 (en) |
DK (1) | DK0760957T3 (en) |
ES (1) | ES2132433T3 (en) |
FI (2) | FI934784A0 (en) |
GR (1) | GR3030696T3 (en) |
RU (1) | RU2138065C1 (en) |
WO (1) | WO1995012134A1 (en) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI953240A0 (en) * | 1995-06-30 | 1995-06-30 | Rados Technology Oy | the light detector |
FI954041A0 (en) * | 1995-08-28 | 1995-08-28 | Hidex Oy | Foerfarande Foer detection of radioactivity and stoedmaterial genome direct detection of ionization |
GB9517930D0 (en) * | 1995-09-01 | 1995-11-01 | Imperial College | Electronically gated microstructure |
GB9517927D0 (en) * | 1995-09-01 | 1995-11-01 | Imperial College | Optoelectrically gated microstructure |
GB2364120B (en) * | 1997-08-11 | 2002-04-03 | Siemens Plc | Personal radiation dosemeters providing audible signals indicative of a dose rate |
CA2215369C (en) | 1997-09-12 | 2008-11-18 | Nicholas Garry Tarr | Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein |
US6414318B1 (en) | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
US6353324B1 (en) | 1998-11-06 | 2002-03-05 | Bridge Semiconductor Corporation | Electronic circuit |
FR2805889B1 (en) * | 2000-03-03 | 2002-05-31 | Centre Nat Rech Scient | AMPLIFIER DEVICE FOR SENSORS AND MEASUREMENT SYSTEM OF A PHYSICAL QUANTITY PROVIDED WITH SUCH A DEVICE |
US6969859B2 (en) * | 2003-05-14 | 2005-11-29 | International Business Machines Corporation | Radiation detecting system |
US7465937B2 (en) | 2003-06-27 | 2008-12-16 | Gesellschaft für Schwerionenforschung mbH | Dosimeter for the detection of high-energy neutron radiation |
US7525431B2 (en) * | 2004-05-06 | 2009-04-28 | Ut-Battelle Llc | Space charge dosimeters for extremely low power measurements of radiation in shipping containers |
US20090146068A1 (en) * | 2004-11-23 | 2009-06-11 | Koninklijke Philips Electronics, N.V. | Radiation dosimeter |
US8742357B2 (en) * | 2007-06-04 | 2014-06-03 | University Of Wollongong | Radiation sensor and dosimeter |
AU2009210747B2 (en) * | 2008-01-30 | 2011-11-17 | Cardiac Pacemakers, Inc. | Method and apparatus for radiation effects detection |
CA2720612C (en) * | 2008-04-07 | 2017-01-03 | Mirion Technologies, Inc. | Dosimetry apparatus, systems, and methods |
CN103299210B (en) | 2010-12-15 | 2015-09-30 | 米里翁技术有限公司 | Dosimetry system, method and assembly |
US20130056641A1 (en) * | 2011-09-01 | 2013-03-07 | Massachusetts Institute Of Technology | Solid-state neutron detector with gadolinium converter |
RU2484554C1 (en) * | 2011-12-27 | 2013-06-10 | Сергей Григорьевич Лазарев | Method of detecting ionising radiation |
JP5984505B2 (en) | 2012-05-22 | 2016-09-06 | 株式会社日立製作所 | Semiconductor gas sensor and manufacturing method thereof |
EP2856209B1 (en) | 2012-06-01 | 2019-05-22 | Landauer, Inc. | Wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
US9057786B2 (en) | 2012-06-01 | 2015-06-16 | Landauer, Inc. | Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
US8803089B2 (en) | 2012-06-01 | 2014-08-12 | Landauer, Inc. | System and method for wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
US9063235B2 (en) | 2012-06-01 | 2015-06-23 | Landauer, Inc. | Algorithm for a wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
WO2014197102A2 (en) | 2013-03-15 | 2014-12-11 | Starfire Industries Llc | Neutron radiation sensor |
WO2014191957A1 (en) | 2013-05-31 | 2014-12-04 | Landauer, Inc. | Algorithm for wireless, motion and position-sensing, integrating radiation sensor for occupational and environmental dosimetry |
KR101616959B1 (en) * | 2013-07-02 | 2016-04-29 | 전자부품연구원 | Fet ion detector and system by using the same |
WO2015024591A1 (en) | 2013-08-20 | 2015-02-26 | Esa European Space Agency | Dosimeter system |
CN103523742B (en) * | 2013-10-24 | 2016-01-13 | 北京大学 | Radiation dose detector of a kind of MOS structure and preparation method thereof |
US9600208B2 (en) | 2014-11-21 | 2017-03-21 | Palo Alto Research Center Incorporated | Passive detector with nonvolatile memory storage |
CN105161566B (en) * | 2015-07-02 | 2017-11-21 | 哈尔滨工程大学 | A kind of half floating transistor gamma-rays dose detector and detection method |
NL2020548A (en) | 2017-04-12 | 2018-10-17 | Asml Netherlands Bv | Mirror Array |
DE102017125006B3 (en) | 2017-10-25 | 2019-03-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method of dosimetry |
US10782420B2 (en) | 2017-12-18 | 2020-09-22 | Thermo Eberline Llc | Range-extended dosimeter |
KR101935880B1 (en) * | 2018-04-27 | 2019-01-07 | (주)아이스퀘어 | Radiation monitoring apparatus using ination chamber |
US20200245957A1 (en) * | 2019-01-31 | 2020-08-06 | Yonglin Biotech Corp. | Radiation measurement penal, device and system |
US11353597B2 (en) | 2020-04-29 | 2022-06-07 | Tower Semiconductor Ltd. | High resolution radiation sensor based on single polysilicon floating gate array |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3896309A (en) * | 1973-05-21 | 1975-07-22 | Westinghouse Electric Corp | Radiation detecting device |
DE3413829A1 (en) * | 1984-04-10 | 1985-10-17 | Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin | MOS DOSIMETER |
US4605946A (en) * | 1984-08-16 | 1986-08-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fet charge sensor and voltage probe |
CA1258922A (en) * | 1985-07-24 | 1989-08-29 | Philip C. East | Solid state dosimeter |
US4757201A (en) * | 1986-06-17 | 1988-07-12 | Westinghouse Electric Corp. | Dosimeter for monitoring food irradiation |
US4769547A (en) * | 1987-01-27 | 1988-09-06 | Medrad, Inc. | Personal dosimeter having a volume of gas atop an integrated circuit |
US5117113A (en) * | 1990-07-06 | 1992-05-26 | Thompson And Nielson Electronics Ltd. | Direct reading dosimeter |
US5332903A (en) * | 1991-03-19 | 1994-07-26 | California Institute Of Technology | p-MOSFET total dose dosimeter |
-
1993
- 1993-10-28 FI FI934784A patent/FI934784A0/en not_active Application Discontinuation
-
1994
- 1994-10-28 DK DK94931057T patent/DK0760957T3/en active
- 1994-10-28 AU AU79957/94A patent/AU7995794A/en not_active Abandoned
- 1994-10-28 DE DE69417770T patent/DE69417770T2/en not_active Expired - Lifetime
- 1994-10-28 CA CA002175224A patent/CA2175224C/en not_active Expired - Lifetime
- 1994-10-28 WO PCT/FI1994/000487 patent/WO1995012134A1/en active IP Right Grant
- 1994-10-28 US US08/637,739 patent/US5739541A/en not_active Expired - Lifetime
- 1994-10-28 JP JP07512434A patent/JP3142295B2/en not_active Expired - Lifetime
- 1994-10-28 AT AT94931057T patent/ATE178719T1/en active
- 1994-10-28 RU RU96110207A patent/RU2138065C1/en active
- 1994-10-28 EP EP94931057A patent/EP0760957B1/en not_active Expired - Lifetime
- 1994-10-28 ES ES94931057T patent/ES2132433T3/en not_active Expired - Lifetime
- 1994-10-28 CN CN94194317A patent/CN1040363C/en not_active Expired - Lifetime
-
1996
- 1996-04-26 FI FI961789A patent/FI110144B/en not_active IP Right Cessation
-
1999
- 1999-07-06 GR GR990401778T patent/GR3030696T3/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO1995012134A1 (en) | 1995-05-04 |
GR3030696T3 (en) | 1999-11-30 |
JP3142295B2 (en) | 2001-03-07 |
RU2138065C1 (en) | 1999-09-20 |
DE69417770D1 (en) | 1999-05-12 |
ATE178719T1 (en) | 1999-04-15 |
EP0760957A1 (en) | 1997-03-12 |
FI110144B (en) | 2002-11-29 |
FI961789A (en) | 1996-04-26 |
JPH09507568A (en) | 1997-07-29 |
FI934784A0 (en) | 1993-10-28 |
US5739541A (en) | 1998-04-14 |
EP0760957B1 (en) | 1999-04-07 |
CA2175224C (en) | 2000-05-23 |
DK0760957T3 (en) | 1999-10-18 |
CA2175224A1 (en) | 1995-05-04 |
CN1040363C (en) | 1998-10-21 |
AU7995794A (en) | 1995-05-22 |
DE69417770T2 (en) | 1999-12-02 |
FI961789A0 (en) | 1996-04-26 |
CN1138901A (en) | 1996-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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