ES2103618T3 - Laser interferometrico de semiconductor con desacoplamiento de luz de bajas perdidas y disposicion equipada con dicho laser. - Google Patents
Laser interferometrico de semiconductor con desacoplamiento de luz de bajas perdidas y disposicion equipada con dicho laser.Info
- Publication number
- ES2103618T3 ES2103618T3 ES95109020T ES95109020T ES2103618T3 ES 2103618 T3 ES2103618 T3 ES 2103618T3 ES 95109020 T ES95109020 T ES 95109020T ES 95109020 T ES95109020 T ES 95109020T ES 2103618 T3 ES2103618 T3 ES 2103618T3
- Authority
- ES
- Spain
- Prior art keywords
- laser
- discoupling
- light
- low loss
- arrangement equipped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
Abstract
EL OBJETIVO DE LA INVENCION SON LASER (YL) SEMICONDUCTORES INTERFEROMETRICOS, ASI COMO DISPOSICIONES OPTOELECTRONICAS CON UN LASER DE ESTE TIPO. EL LASER POSEE UN SEGMENTO (Z) DE DESACOPLAMIENTO ESPECIAL, QUE ESTA EQUIPADO PARA ELIMINACION DE ALTA POTENCIA OPTICA, SIN COMPORTAMIENTO DE FILTRADO DE LASER PARA SU INFLUENCIA O EN LA ZONA DE DETERMINACION DE LASER ESENCIALMENTE CON DISPOSICION PARA RESTRICCION . ES ESPECIALMENTE POBRE DE PERDIDA EL ACOPLAMIENTO POSIBLE CON EL LASER DE ACUERDO CON LA INVENCION A FIN DE OBTENER UN ELEMENTO CONSTRUCTIVO OPTOELECTRONICO QUE SIGUE A CONTINUACION (P.EJ. UN CONVERTIDOR DE LONGITUD DE ONDA (WK)) QUE ESTA CONSTITUIDO DE FORMA CONJUNTA CON DEL LASER, INTEGRADO DE MANERA MONOLITICA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4421043A DE4421043A1 (de) | 1994-06-17 | 1994-06-17 | Interferometrischer Halbleiterlaser mit verlustarmer Lichtauskopplung und Anordung mit einem solchen Laser |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2103618T3 true ES2103618T3 (es) | 1997-09-16 |
Family
ID=6520736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES95109020T Expired - Lifetime ES2103618T3 (es) | 1994-06-17 | 1995-06-12 | Laser interferometrico de semiconductor con desacoplamiento de luz de bajas perdidas y disposicion equipada con dicho laser. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5995530A (es) |
EP (1) | EP0688069B1 (es) |
JP (1) | JPH0856058A (es) |
AT (1) | ATE150594T1 (es) |
DE (2) | DE4421043A1 (es) |
ES (1) | ES2103618T3 (es) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19619533A1 (de) * | 1996-05-15 | 1997-11-20 | Sel Alcatel Ag | Monolithisch integriertes optisches Halbleiterbauelement |
US6175670B1 (en) * | 1998-03-23 | 2001-01-16 | Lucent Technologies, Inc. | Planar lightguide circuit having a planar grating |
US6324322B1 (en) * | 1999-06-07 | 2001-11-27 | Wavesplitter Technologies, Inc. | Fused-fiber multi-window wavelength filter using unbalanced Michelson Interferometer |
TW523615B (en) * | 2000-02-17 | 2003-03-11 | L3 Optics Inc | Guided wave optical switch based on an active semiconductor amplifier and a passive optical component |
US20050226283A1 (en) * | 2004-04-05 | 2005-10-13 | Lightip Technologies Inc. | Single-mode semiconductor laser with integrated optical waveguide filter |
CA2521731A1 (en) * | 2005-05-09 | 2006-11-09 | Jian-Jun He | Wavelength switchable semiconductor laser |
CN100463312C (zh) * | 2006-11-09 | 2009-02-18 | 何建军 | V型耦合腔波长可切换半导体激光器 |
WO2009133631A1 (en) * | 2008-04-30 | 2009-11-05 | Nec Corporation | Tunable laser source using intracavity laser light outcoupling and module containing the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60263488A (ja) * | 1984-06-12 | 1985-12-26 | Matsushita Electric Ind Co Ltd | 光集積回路装置 |
US4887877A (en) * | 1985-10-09 | 1989-12-19 | Hitachi, Ltd. | Optical devices and optical integrated circuits |
US4831631A (en) * | 1986-09-29 | 1989-05-16 | Siemens Aktiengesellschaft | Laser transmitter comprising a semiconductor laser and an external resonator |
DE3931588A1 (de) * | 1989-09-22 | 1991-04-04 | Standard Elektrik Lorenz Ag | Interferometrischer halbleiterlaser |
DE4212152A1 (de) * | 1992-04-10 | 1993-10-14 | Sel Alcatel Ag | Durchstimmbarer Halbleiterlaser |
-
1994
- 1994-06-17 DE DE4421043A patent/DE4421043A1/de not_active Withdrawn
-
1995
- 1995-06-12 EP EP95109020A patent/EP0688069B1/de not_active Expired - Lifetime
- 1995-06-12 AT AT95109020T patent/ATE150594T1/de active
- 1995-06-12 DE DE59500141T patent/DE59500141D1/de not_active Expired - Fee Related
- 1995-06-12 ES ES95109020T patent/ES2103618T3/es not_active Expired - Lifetime
- 1995-06-19 JP JP7152014A patent/JPH0856058A/ja active Pending
-
1996
- 1996-12-09 US US08/762,118 patent/US5995530A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE150594T1 (de) | 1997-04-15 |
DE59500141D1 (de) | 1997-04-24 |
EP0688069B1 (de) | 1997-03-19 |
EP0688069A1 (de) | 1995-12-20 |
DE4421043A1 (de) | 1995-12-21 |
JPH0856058A (ja) | 1996-02-27 |
US5995530A (en) | 1999-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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