ES2081076T3 - Laser semi-conductor con entrada optica de accionamiento. - Google Patents
Laser semi-conductor con entrada optica de accionamiento.Info
- Publication number
- ES2081076T3 ES2081076T3 ES92403530T ES92403530T ES2081076T3 ES 2081076 T3 ES2081076 T3 ES 2081076T3 ES 92403530 T ES92403530 T ES 92403530T ES 92403530 T ES92403530 T ES 92403530T ES 2081076 T3 ES2081076 T3 ES 2081076T3
- Authority
- ES
- Spain
- Prior art keywords
- laser
- guide
- optical
- cavity
- amplification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/026—Optical bistable devices based on laser effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1061—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a variable absorption device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Abstract
EL PRESENTE DISPOSITIVO COMPRENDE UNA CAVIDAD LASER (1) QUE TIENE UNA ZONA DE AMPLIFICACION LASER (2) Y UNA ZONA DE ABSORCION SATURABLE (3). UN DISPOSITIVO DE ACOPLAMIENTO ASIMETRICO (4) QUE COMPRENDE UNA PRIMERA (6) Y UNA SEGUNDA GUIA DE LUZ QUE TIENE, PARA LA LONGITUD DE ONDA DE EMISION LASER DE LA CAVIDAD, INDICES DE REFRACCION EFECTIVOS DIFERENTES, ESTANDO EL INDICE EFECTIVO DE DICHA PRIMERA GUIA (6) AL MENOS CERCA DEL INDICE EFECTIVO DEL MODO LASER QUE SE PROPAGA EN DICHAS ZONAS DE AMPLIFICACION Y DE ABSORCION, ESTANDO DISPUESTA DICHA SEGUNDA GUIA (5) PARA PODER SER ACOPLADA CON UNA FUENTE DE SEÑALES OPTICAS DE CONTROL. LA INVENCION SE APLICA A LOS DISPOSITIVOS DE LASER QUE SE PUEDEN PONER EN MARCHA OPTICAMENTE Y QUE PUEDEN SERVIR, POR EJEMPLO DE OPERADOR FOTONICO BIESTABLE, DE ELEMENTO REGENERADOR OPTICO Y DE ELEMENTO DE UN REGISTRO DE DECALAJE O DE LINEA DE RETARDO OPTICO DE SALIDAS MULTIPLES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9116238A FR2685827B1 (fr) | 1991-12-27 | 1991-12-27 | Laser semi-conducteur avec entree optique de commande. |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2081076T3 true ES2081076T3 (es) | 1996-02-16 |
Family
ID=9420581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92403530T Expired - Lifetime ES2081076T3 (es) | 1991-12-27 | 1992-12-22 | Laser semi-conductor con entrada optica de accionamiento. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0549465B1 (es) |
AT (1) | ATE132665T1 (es) |
DE (1) | DE69207373T2 (es) |
ES (1) | ES2081076T3 (es) |
FR (1) | FR2685827B1 (es) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19712620A1 (de) * | 1997-03-26 | 1998-10-01 | Univ Schiller Jena | Laserdiode mit geringem Abstrahlwinkel in der Form eines Streifenwellenleiters und Verfahren zu ihrer Herstellung |
FR3123163A1 (fr) * | 2021-05-20 | 2022-11-25 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Dispositif laser impulsionnel comportant une source laser hybride à déclenchement optique actif, pour réseau de neurones artificiels photoniques |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62286017A (ja) * | 1986-06-03 | 1987-12-11 | Nec Corp | 光スイツチ |
JPH0231480A (ja) * | 1988-07-21 | 1990-02-01 | Nec Corp | 面発光型双安定半導体レーザ |
-
1991
- 1991-12-27 FR FR9116238A patent/FR2685827B1/fr not_active Expired - Fee Related
-
1992
- 1992-12-22 EP EP92403530A patent/EP0549465B1/fr not_active Expired - Lifetime
- 1992-12-22 DE DE69207373T patent/DE69207373T2/de not_active Expired - Fee Related
- 1992-12-22 AT AT92403530T patent/ATE132665T1/de not_active IP Right Cessation
- 1992-12-22 ES ES92403530T patent/ES2081076T3/es not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2685827B1 (fr) | 1994-02-04 |
FR2685827A1 (fr) | 1993-07-02 |
DE69207373T2 (de) | 1996-05-15 |
EP0549465A1 (fr) | 1993-06-30 |
DE69207373D1 (de) | 1996-02-15 |
ATE132665T1 (de) | 1996-01-15 |
EP0549465B1 (fr) | 1996-01-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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