ES2036469B1 - TEST STRUCTURE FOR THE MEASUREMENT OF LATERAL DIFFUSION IN TECHNOLOGIES DOPED FROM A POLISICILE, WITH CORRECTION OF MISALIGNMENT - Google Patents
TEST STRUCTURE FOR THE MEASUREMENT OF LATERAL DIFFUSION IN TECHNOLOGIES DOPED FROM A POLISICILE, WITH CORRECTION OF MISALIGNMENTInfo
- Publication number
- ES2036469B1 ES2036469B1 ES09101936A ES9101936A ES2036469B1 ES 2036469 B1 ES2036469 B1 ES 2036469B1 ES 09101936 A ES09101936 A ES 09101936A ES 9101936 A ES9101936 A ES 9101936A ES 2036469 B1 ES2036469 B1 ES 2036469B1
- Authority
- ES
- Spain
- Prior art keywords
- lateral diffusion
- polisicile
- misalignment
- doped
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
LA ESTRUCTURA DE TEST PARA LA MEDIDA DE LA DIFUSION LATERAL EN TECNOLOGIAS CON DOPADO A PARTIR DE POLISICILIO, CON CORRECCION DEL DESALINEAMIENTO ES UN DISPOSITIVO COMPUESTO DE VARIOS TRANSISTORES MOS DE VACIAMIENTO, DE DISTINTAS DIMENSIONES, CON CONTACTOS ENTERRADOS DISPUESTOS ALTERNATIVAMENTE A DERECHA E IZQUIERDA. LA ESTRUCTURA DEBE CONTENER CUATRO TRANSISTORES COMO MINIMO A PESAR DE QUE LA IMPLEMENTACION PRACTICA QUE SE PRESENTA CONTIENE NUEVE. LA MEDIDA QUE SE REALIZA ES DE TIPO ELECTRICO MEDIANTE AJUSTES LINEALES DE LA INVERSA DE LA CORRIENTE DE DRENADOR RESPECTO A LAS LONGITUDES DE LOS TRANSISTORES. SU APLICACION CONSISTE EN LA OBTENCION AUTOMATICA MEDIANTE MEDIDAS ELECTRICAS DE LA LONGITUD DE DIFUSION LATERAL EN PROCESOS DE AUTODOPADO A PARTIR DE MATERIAL POLICRISTALINO.THE TEST STRUCTURE FOR THE MEASUREMENT OF LATERAL DIFFUSION IN TECHNOLOGIES DOPED FROM A POLISICILE, WITH CORRECTION OF MISALIGNMENT IS A DEVICE COMPOSED OF VARIOUS DIFFERENT DIFFERENT DIFFERENT DIFFERENT DIFFERENT CONTACTS DIFFERENT DIFFERENT FROM EARLY. THE STRUCTURE MUST CONTAIN AT LEAST FOUR TRANSISTORS DESPITE THE PRACTICAL IMPLEMENTATION PRESENTED CONTAINS NINE. THE MEASURE THAT IS CARRIED OUT IS OF THE ELECTRICAL TYPE THROUGH LINEAR ADJUSTMENTS OF THE REVERSE OF THE DRAINAGE CURRENT WITH RESPECT TO THE LENGTHS OF THE TRANSISTORS. ITS APPLICATION CONSISTS IN THE AUTOMATIC OBTAINING THROUGH ELECTRICAL MEASURES OF THE LENGTH OF LATERAL DIFFUSION IN SELF-DOPTING PROCESSES FROM POLYCHRISTALLINE MATERIAL.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES09101936A ES2036469B1 (en) | 1991-08-27 | 1991-08-27 | TEST STRUCTURE FOR THE MEASUREMENT OF LATERAL DIFFUSION IN TECHNOLOGIES DOPED FROM A POLISICILE, WITH CORRECTION OF MISALIGNMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES09101936A ES2036469B1 (en) | 1991-08-27 | 1991-08-27 | TEST STRUCTURE FOR THE MEASUREMENT OF LATERAL DIFFUSION IN TECHNOLOGIES DOPED FROM A POLISICILE, WITH CORRECTION OF MISALIGNMENT |
Publications (3)
Publication Number | Publication Date |
---|---|
ES2036469A2 ES2036469A2 (en) | 1993-05-16 |
ES2036469R ES2036469R (en) | 1995-05-16 |
ES2036469B1 true ES2036469B1 (en) | 1995-12-16 |
Family
ID=8273379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES09101936A Expired - Fee Related ES2036469B1 (en) | 1991-08-27 | 1991-08-27 | TEST STRUCTURE FOR THE MEASUREMENT OF LATERAL DIFFUSION IN TECHNOLOGIES DOPED FROM A POLISICILE, WITH CORRECTION OF MISALIGNMENT |
Country Status (1)
Country | Link |
---|---|
ES (1) | ES2036469B1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3335340A (en) * | 1964-02-24 | 1967-08-08 | Ibm | Combined transistor and testing structures and fabrication thereof |
US3440715A (en) * | 1967-08-22 | 1969-04-29 | Bell Telephone Labor Inc | Method of fabricating integrated circuits by controlled process |
US3650020A (en) * | 1970-02-24 | 1972-03-21 | Bell Telephone Labor Inc | Method of monitoring semiconductor device fabrication |
US4453127A (en) * | 1982-06-09 | 1984-06-05 | International Business Machines Corporation | Determination of true electrical channel length of surface FET |
DE3917702A1 (en) * | 1989-05-31 | 1990-12-06 | Siemens Ag | METHOD FOR DETERMINING THE DIFFERENTIAL LENGTH OF MINORITY CHARGE CARRIERS IN A SEMICONDUCTOR CRYSTAL BODY BY MEANS OF AN ELECTROLYTIC CELL |
DE3942861A1 (en) * | 1989-12-23 | 1991-06-27 | Bosch Gmbh Robert | METHOD FOR DETERMINING THE POSITION OF A PN TRANSITION |
-
1991
- 1991-08-27 ES ES09101936A patent/ES2036469B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ES2036469A2 (en) | 1993-05-16 |
ES2036469R (en) | 1995-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 20020425 |