EP4736080A2 - Anpassung der tunnelübergangseigenschaften von atomschichtabscheidungsschichten durch unterschichtmodifizierung - Google Patents

Anpassung der tunnelübergangseigenschaften von atomschichtabscheidungsschichten durch unterschichtmodifizierung

Info

Publication number
EP4736080A2
EP4736080A2 EP24832922.9A EP24832922A EP4736080A2 EP 4736080 A2 EP4736080 A2 EP 4736080A2 EP 24832922 A EP24832922 A EP 24832922A EP 4736080 A2 EP4736080 A2 EP 4736080A2
Authority
EP
European Patent Office
Prior art keywords
layer
metal
superconducting
resistivity
quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP24832922.9A
Other languages
English (en)
French (fr)
Inventor
Christopher BORST
Hunter FROST
Ekta BHATIA
Tuan Vo
Soumen KAR
Satyavolu Papa Rao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Research Foundation of the State University of New York
Original Assignee
Research Foundation of the State University of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Foundation of the State University of New York filed Critical Research Foundation of the State University of New York
Publication of EP4736080A2 publication Critical patent/EP4736080A2/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/10Junction-based devices
    • H10N60/12Josephson-effect devices
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0912Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Computing Systems (AREA)
  • Evolutionary Computation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Data Mining & Analysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
EP24832922.9A 2023-06-27 2024-06-27 Anpassung der tunnelübergangseigenschaften von atomschichtabscheidungsschichten durch unterschichtmodifizierung Pending EP4736080A2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202363523410P 2023-06-27 2023-06-27
US202463640576P 2024-04-30 2024-04-30
PCT/US2024/035793 WO2025006731A2 (en) 2023-06-27 2024-06-27 Adjusting tunnel junction characteristics of atomic layer deposition films through underlayer modification

Publications (1)

Publication Number Publication Date
EP4736080A2 true EP4736080A2 (de) 2026-05-06

Family

ID=93940196

Family Applications (1)

Application Number Title Priority Date Filing Date
EP24832922.9A Pending EP4736080A2 (de) 2023-06-27 2024-06-27 Anpassung der tunnelübergangseigenschaften von atomschichtabscheidungsschichten durch unterschichtmodifizierung

Country Status (2)

Country Link
EP (1) EP4736080A2 (de)
WO (1) WO2025006731A2 (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9984923B2 (en) * 2016-06-30 2018-05-29 International Business Machines Corporation Barrier layers in trenches and vias
US11527696B2 (en) * 2017-10-05 2022-12-13 Google Llc Low footprint resonator in flip chip geometry
US20200266234A1 (en) * 2018-04-20 2020-08-20 D-Wave Systems Inc. Systems and methods for fabrication of superconducting devices
US11145801B2 (en) * 2019-11-12 2021-10-12 International Business Machines Corporation Adhesion layer to enhance encapsulation of superconducting devices
US11410881B2 (en) * 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride

Also Published As

Publication number Publication date
WO2025006731A2 (en) 2025-01-02
WO2025006731A3 (en) 2025-05-01

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