EP4515306A1 - Optisches bauteil für eine lithographieanlage - Google Patents
Optisches bauteil für eine lithographieanlageInfo
- Publication number
- EP4515306A1 EP4515306A1 EP23722303.7A EP23722303A EP4515306A1 EP 4515306 A1 EP4515306 A1 EP 4515306A1 EP 23722303 A EP23722303 A EP 23722303A EP 4515306 A1 EP4515306 A1 EP 4515306A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- optical
- optical element
- support element
- optical component
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/10—Mirrors with curved faces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
- G02B7/182—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
Definitions
- the present invention relates to an optical component, a use of an optical component, a projection lens, a lithography system and several methods for producing such an optical component.
- the content of the priority application DE 102022204268.9 is fully incorporated by reference (incorporation by reference).
- Microlithography is used to produce microstructured components, such as integrated circuits. The microlithography process is carried out using a lithography system that has an illumination system and a projection system.
- the image of a mask (reticle) illuminated by the illumination system is projected by means of the projection system onto a substrate, for example a silicon wafer, which is coated with a light-sensitive layer (photoresist) and arranged in the image plane of the projection system in order to project the mask structure onto the photosensitive coating of the substrate to transfer.
- a substrate for example a silicon wafer
- photoresist a light-sensitive layer
- EUV lithography systems which use light with a wavelength in the range from 0.1 nm to 30 nm, in particular 13.5 nm. Since most materials absorb light of this wavelength, reflecting optics, i.e. mirrors, must be used in such EUV lithography systems instead of - as before - refracting optics, i.e.
- the move to the EUV range also means the transition to mirror systems that work either with almost vertical incidence or grazing. In perpendicular incidence on each Mirrors absorb about a third of the incident light (depending on the specific angle of incidence spectrum); under grazing incidence, typical absorption values are a quarter or fifth. In refractive media, such as lenses, with an anti-reflective layer, however, the absorbed intensity is in the per mille range for comparison. This explains the significantly greater temperature changes in EUV optics compared to lens-based systems. The temperature changes are in the range of several Kelvin instead of a few tenths of Kelvin, as with lens systems.
- EUV mirrors are preferably made from materials with particularly low thermal expansion coefficients, for example from Zerodur® or ULE® ("Ultralow Expansion" material). These materials play off components with positive and negative thermal expansion coefficients against each other. The result is an effectively linear relationship between thermal expansion and temperature, whereby there is exactly one temperature value at which thermal expansion disappears, namely at the so-called zero-crossing temperature. Such materials are particularly complex to produce and therefore expensive. Accordingly, the optics made from them are also cost-intensive.
- an object of the present invention is to provide an improved optical component for a lithography system.
- an optical component for a lithography system is proposed. This comprises an optical element which is made of a first material and has an optically effective surface. Furthermore, the optical component comprises a support element which is made of a second material and carries the optical element. The second material is different from the first material.
- the ratio of the densities of the first and second materials deviates from 1 by less than 20%, preferably by less than 10% and even more preferably by less than 5%.
- the optical element and the support element each have a main extension plane in which they have a maximum extent.
- the maximum extent of the optical element is less than 90%, preferably less than 80% and even more preferably less than 75% of the maximum extent of the support element.
- the present invention is based on the knowledge that the support element fulfills functionally different tasks than the optical element and can therefore be made from a different, in particular inexpensive, material. Nevertheless, the support element or its second material should be as similar as possible to the first material (albeit cheaper). Accordingly, a mechanical and/or thermal behavior of the support element can approximate that of the optical element.
- the main extension plane of the optical element and the main extension plane of the support element are preferably arranged parallel to one another or are at an angle of less than 10 degrees, preferably less than 5 degrees and even more preferably less than 3 degrees to one another.
- the “optically effective surface” means that surface of the optical element that interacts with the useful light (working light), in particular for the imaging process.
- the optical component is designed to be particularly suitable for use in the lithography sector.
- the optical element and the support element each have a maximum thickness perpendicular to the main extension plane, the maximum thickness of the optical element being less than 90%, preferably less than 80%, even more preferably less than 75% of the maximum thickness of the Supporting element is. This advantageously ensures that the support element can absorb the majority of the deformation forces that act on the optical component - for example during manipulation during operation of the lithography system.
- the optical element has a side facing away from the optically effective surface, the side having a side surface and the optical element with at least 50%, preferably at least 75%, even more preferably at least 90% of the side surface or is in complete contact with the support element, preferably over the entire surface.
- This measure also improves the input of force from the support element into the optical element and vice versa.
- a point contact between the optical element and the support element can be sufficient.
- full-surface contact between the side surface (for example over at least 90% of it) and the support element is preferred because point deformations can be better avoided.
- Completely in contact means that 100% of the side surface is in contact with the support element. This somewhat precludes the presence of cooling channels at the interface between the optical element and the support element.
- the optical element is accommodated in a recess, in particular in a cup-shaped recess, or in a through opening in the support element.
- This measure can also improve force coupling between the optical element and the support element.
- a material boundary between the first and second materials runs partially or completely in a direction perpendicular to the main extension plane of the optical element.
- the optical element can be connected to the support element both on its rear side and on one or more peripheral surfaces that run perpendicular thereto (or at another angle that deviates from vertical). This also improves the force coupling.
- the optical element and the support element are formed in one piece with one another.
- optical connection means a frictional connection or a connection with the help of magnetic forces.
- material connection is meant a connection with the help of adhesion forces. This can be done with the help of an adhesion-promoting material, such as adhesive, or without one.
- the optical element and the support element adhere directly to one another. This is done, for example, by blasting or fusing.
- a “formal connection” means that the connection partners reach behind each other. This means that the optical element and the support element engage behind one another at one or more fastening points.
- an engagement and a receiving means is provided, or an additional connecting means (separate part) can be provided, which connects the optical element and the support element to one another in a form-fitting manner.
- the fastening means has one of the engaging or receiving means.
- the optical element and the support element have a corresponding receiving or engaging means. The connecting means then connects the optical element and the support element in a form-fitting manner.
- a fastener can also be used for force or material connection (indirect fastening).
- the optical element and the support element are fused together, glued together or blasted together.
- Such a connection technology is advantageous because it ensures uniform force transmission across the surface.
- the following methods (also in combination with one another) for connecting the optical element and the support element to one another come into consideration, which can in particular be cohesive methods: - Glass frit bonding (soldering with glass solder).
- This compound is advantageously inorganic and can have a melting temperature of, for example, between 300 and 400 ° C.
- - Soldering especially using metallic solders.
- This type of connection is advantageously inorganic.
- low-melting solders with a melting temperature of, for example, 60 - 400 ° C, preferably 60 - 250 ° C, can be used.
- a solder with a melting temperature greater than 200°C is particularly preferred.
- - Diffusion-driven processes such as thermo-compression bonding, solid-liquid interdiffusion bonding and/or eutectic joining.
- - Welding in particular: Beam-based welding, such as laser welding.
- the following procedure can be chosen: polishing the surfaces of the components to be joined (here: optical element and/or support element), blasting components together, focusing lasers in the area of the joining surfaces and melting partial areas and thereby connecting the components. share. Friction welding, possibly in conjunction with a metallic coating.
- Cold welding processes in particular diffusion-driven joining processes, for example accelerated by an increased temperature or an increased joining pressure.
- the following method can be chosen in particular: First, the surfaces of the components to be joined (here: optical element and/or support element) are polished, then the components are blasted together. The components then rest until the material exchange in the connecting surfaces leads to the desired strength.
- - Silicate joining and/or hydroxide-based joining especially for materials containing silicon.
- Reactive joining - Anodic bonding.
- - Surface-activated bonding especially using a metallic coating.
- the first and second materials differ in one or more of the following properties: a refractive index homogeneity, a proportion and/or a size of inclusions, in particular bubbles, a stress birefringence, an intrinsic polarization birefringence, a transmittance , in particular at the operating wavelength of the optical element, a density and / or a change in density in at least one spatial direction, a hardness or a change in hardness in at least one spatial direction, a roughness, a slumping property and resistance to compaction and/or solarization.
- differences between the first and second material are advantageously permitted, which reduces the manufacturing costs for the second material.
- the properties can be defined as follows:
- the procedure is as follows: For both the optical element and the support element (which in this case are designed as refractive optics), a refractive index distribution is determined over the - the respective volume is determined.
- One or more variables characterizing the variation of the refractive index over the volume are then determined.
- Such a quantity is, for example, a peak-valley value, an RMS value (“root mean square”) or a development coefficient of an adjustment of one or more gradient functions to the measured distribution.
- the gradient functions can in particular be products of Legendre polynomials or Zernike functions.
- the one or more characterizing variables of the optical element are compared with that or those of the support element.
- “Homogeneity” in the present sense exists, for example, if the ratio of the variables characterizing the variation or the largest of the respective ratios for several such variables is less than 150%.
- the refractive index also known as the refractive index, is the ratio of the vacuum speed of light c 0 to the propagation speed c M of the light in the respective medium (i.e. the first or second material).
- the proportion of inclusions in the first or second material can be expressed as a volume percent.
- the size of the inclusions can be specified as the largest dimension, for example the largest diameter. For example The largest bubble in the first material can be compared with the largest bubble in the second material, each based on a maximum diameter.
- a difference in the volume fraction and/or size of inclusions can be, for example, greater than 5%, greater than 10% or greater than 20%.
- the stress birefringence can be determined by detecting a loss of contrast in light that passes through the first or second material.
- the loss of contrast is the result of the change in the direction of polarization.
- the contrast loss can be measured in nanometers per centimeter.
- a difference in the maximum value of the stress birefringence between the first and second materials may be 0.2 nm/cm, 0.5 nm/cm or 1.0 nm/cm.
- the intrinsic polarization birefringence of the first material can correspond to that of a calcium fluoride crystal or can lie around a predetermined value within a tolerance window corresponding to a predetermined accuracy of the crystal orientation.
- the tolerance window can be, for example, -5°, -10°, -20° to 5°, 10°, 20°.
- the crystal orientation in the calcium fluoride crystal may be 100, 111 or 110.
- the second material in contrast, has no intrinsic birefringence.
- both materials can have intrinsic polarization birefringence, with the deviation of this birefringence in the first material being less than 0.1 nm/cm, 0.2 nm/cm or 0.5 nm/cm from a designed value for this intrinsic birefringence or the true crystal orientation deviates by less than 5°, 10° or 20° from a designed value for the crystal orientation, while the deviation in the second material is correspondingly higher, for example by at least 20% or 50% in each case.
- cause for this Deviation can be a different precise setting of the true crystal orientation angle relative to a predetermined angle in the respective material.
- the transmittance k is defined here as the ratio of the amount of light I in radiating onto the optical element or the support element to the amount of light I ver leaving the optical element or support element, the ratio being given as: , where "L" describes the distance in the first or second material through which the incident light shines. The distance is given in meters, for example.
- the difference in transmittance between the optical element and the support element is, for example, greater than 5%, greater than 10% or greater than 20%.
- the density, expressed as mass per volume, or its change, that is, the gradient in a spatial direction, of the first material preferably differs by greater than 5%, greater than 10% or greater than 20% from the density or change thereof of the second material away.
- a “slumping property” is understood to mean the following:
- the optical element, but also the support element (but less preferred) can have a layer structure.
- a layered blank is placed in or on a curved mold and heated there. Accordingly, the layer stack (in a state that can be deformed thanks to the high temperature) uniformly assumes the corresponding shape, with the layer sequence along the surface perpendicular remaining largely intact. This process can create a high-quality component become.
- the optical component can be produced with the desired curvature on its optically effective surface.
- a difference between the first and second materials in terms of their slumping property can be either that the first material or the optical element has been produced in a slumping process as described above and the second material or the support element was not manufactured using such a process.
- the thicknesses of the layer sequence along the surface normal can differ to varying degrees from a desired target state.
- the layer thickness accuracies of the first material or the optical element can, on average or at the maximum, be closer than 10%, closer than 25% or closer than 50% to a specified value in comparison to the layer thickness accuracies of the second material or the support element at this specified value, also in the average or maximum.
- loading with hydrogen or comparable pretreatment can be carried out, which is often time-consuming.
- irradiation of the (suitably selected and/or treated) first material with a predetermined number of LASER pulses can result in a 50%, preferably 80%, more preferably 90% lower refractive index or transmission change compared to the second Lead material, with the same test specimen and irradiation geometry.
- the loading time of the first material with hydrogen can be at least 50%, 100% or 200% longer than that of the second material.
- the roughness of the surface of the optical element in a spatial frequency range of 10 nm - 1 mm can be characterized by an RMS value that is around is a factor of 5, 10 or 20 or more below that of the support element and in particular can be less than 0.5 nm, 0.3 nm or 0.1 nm.
- Corresponding ratios of the RMS values can also exist in individual bands for spatial frequencies, for example in the band 100 ⁇ m – 1 mm, 10 ⁇ m – 100 ⁇ m, 1 ⁇ m – 10 ⁇ m or 100 nm – 1 ⁇ m.
- a thermal expansion coefficient of the first material is at least ten times lower than a thermal expansion coefficient of the second material.
- the support element has one or more of the following components: a mechanical interface for attaching it to a support frame of a lithography system and/or for attaching an actuator, and/or a measurement object for measuring the position of the support element Using a measuring device.
- a mechanical interface for attaching it to a support frame of a lithography system and/or for attaching an actuator, and/or a measurement object for measuring the position of the support element Using a measuring device.
- the optical element is a mirror, a lens, a polarization-optical element, in particular a retarder plate, a polarization filter or a rotation element which is set up to rotate a polarization direction, a color filter and/or an optical grating.
- the first material is Ultralow Expansion Material (ULE®), Zerodur®, calcium fluoride and/or quartz glass and/or the second material is quartz glass, optical glass, glass ceramic, silicon, SiSiC or steel, in particular Invar®. Accordingly, the first material is visually more valuable than the second material, but the second material is more cost-effective.
- ULE is a titanium-doped quartz glass.
- Zerodur is a glass ceramic.
- Invar is an iron-nickel alloy with 64% iron and 36% nickel.
- SiSiC is a silicon carbide.
- a use of the optical component as described above is provided.
- the optical component is used in an imaging process, with a working light used having a wavelength of less than 120 nm, preferably 30 nm.
- the work light interacts with the optically effective surface of the optical element.
- a projection lens in particular a catadioptric projection lens or with a pure mirror system, is provided.
- the projection lens has an optical component as described above.
- the optical element of the component can be a lens, which is arranged close to the field or intermediately in the beam path.
- the component is a mirror or another optical element.
- a lithography system in particular an EUV or DUV lithography system, is provided.
- EUV stands for “Extreme Ultraviolet” and denotes a wavelength of the working light between 0.1 nm and 30 nm.
- DUV stands for “Deep Ultraviolet” and denotes a wavelength of the working light between 30 nm and 250 nm.
- a method for producing an optical component as described above is provided. The method includes the steps: a) simulating properties of the optical component during operation; b) adapting at least one of these properties depending on the simulation; and c) producing the optical component with the adapted property.
- the properties of the optical component during operation according to step a) are simulated in a first simulation.
- the manufacturing effort required to produce the optical component is simulated in a second simulation.
- the at least one property is then adjusted according to step b) depending on the first and second simulation.
- the manufacturing effort can be expressed, for example, in machine hours, material costs, etc. This makes it easy to determine a solution that is suitable both in terms of appearance and in terms of manufacturing costs.
- the properties simulated according to step a) include an optical property of the optically effective surface.
- adjusting the at least one property according to step b) includes adjusting a dimension of the optical element and/or the support element and/or adjusting the first or second material. If it is determined that, for example, the optical property does not yet meet the requirements, the optical element can, for example, be made larger (in particular with a larger volume). Additionally or alternatively, an optically better first material can be used.
- a correction means for adapting the at least one property of the optical element is determined, the correction means being provided outside the optical component.
- the desired optical property can advantageously be achieved not only by adapting the optical element or the support element. Rather, correction means known from the prior art can be used in order (nevertheless) to be able to use a smaller optical element or an optical element made of a less high-quality first material.
- a method for producing an optical component for a lithography system is provided.
- Steps a) to c) can basically be carried out in any order.
- the support element can be manufactured first and the optical element can be produced immediately afterwards, ie steps a) and c) take place simultaneously and after step b).
- a variation of a removal rate at which the first material is removed is greater than 20%.
- a variation of a removal rate at which the second material is removed is less than or equal to 20%. The higher the variation in the removal rate, the more complex the processing. For example, the removal rate varies if different crystal structures or planes have to be removed with high quality - for example in the case of carving out a curved shape from calcium fluoride.
- the removal rate is expressed, for example, as mm 3 /h (i.e. volume of material removed per unit of time).
- the variation refers, for example, to the entire manufacturing process from the material blank to the (finished) optical element or support element.
- the removal rate can refer to removal by means of, for example, milling or polishing.
- the manufacturing in step a) and/or step b) includes the use of a slumping process, wherein preferably a maximum or average deviation of an actual layer thickness from a target layer thickness is smaller for the first material than for the second Material. Accordingly, the first material is of higher quality than the second material, but the latter is cheaper to produce.
- “on” is not necessarily to be understood as limiting it to exactly one element. Rather, several elements, such as two, three or more, can also be provided. Any other counting word used here should not be understood to mean that there is a limitation to exactly the number of elements mentioned. Rather, numerical deviations upwards and downwards are possible, unless otherwise stated.
- FIG. 1 shows a schematic meridional section of a projection exposure system for EUV projection lithography
- 2 shows a perspective view of a section of a lithography system according to one embodiment
- Fig.3 shows a partial section III from Fig.2
- Fig.4 shows a section of a top view IV from Fig.2
- Fig.5 shows a view V from Fig.4
- 6 shows a section of an optical component according to a further embodiment
- 7 shows a section of an optical component according to yet another embodiment
- 8 shows a section of an optical component according to yet another embodiment
- 9 shows a section of an optical component according to yet another embodiment
- 10 shows a side view of an optical component with a lens according to an embodiment
- Fig. 11 shows a view XI from Fig.
- FIG. 10 shows a flowchart of a method according to an embodiment
- Fig. 13 shows a process step in a slumping process
- Fig. 14 shows a view XIV from Fig. 13
- FIG. 15 shows a flowchart of a method according to an embodiment.
- identical or functionally identical elements have been given the same reference numerals, unless otherwise stated.
- the representations in the figures are not necessarily to scale.
- 1 shows an embodiment of a projection exposure system 1 (lithography system), in particular an EUV lithography system.
- a lighting system 2 of the projection exposure system 1 has, in addition to a light or radiation source 3, lighting optics 4 Illumination of an object field 5 in an object plane 6.
- the light source 3 can also be provided as a module separate from the other lighting system 2.
- the lighting system 2 does not include the light source 3.
- a reticle 7 arranged in the object field 5 is exposed.
- the reticle 7 is held by a reticle holder 8.
- the reticle holder 8 can be displaced via a reticle displacement drive 9, in particular in a scanning direction.
- a Cartesian coordinate system with an x-direction x, a y-direction y and a z-direction z is shown in FIG. 1 for explanation purposes.
- the x-direction x runs perpendicularly into the drawing plane.
- the y-direction y is horizontal and the z-direction z is vertical.
- the scanning direction runs along the y-direction y.
- the z-direction z runs perpendicular to the object plane 6.
- the projection exposure system 1 includes projection optics 10.
- the projection optics 10 is used to image the object field 5 into an image field 11 in an image plane 12.
- the image plane 12 runs parallel to the object plane 6.
- an angle other than 0° between the object plane 6 and the image plane 12 is also possible.
- a structure on the reticle 7 is imaged on a light-sensitive layer of a wafer 13 arranged in the area of the image field 11 in the image plane 12.
- the wafer 13 is held by a wafer holder 14.
- the wafer holder 14 can be displaced in particular along the y-direction y via a wafer displacement drive 15.
- the light source 3 is an EUV radiation source.
- the light source 3 emits in particular EUV radiation 16, which is also referred to below as useful radiation, illumination radiation or illumination light.
- the useful radiation 16 in particular has a wavelength in the range between 5 nm and 30 nm.
- the light source 3 can be a plasma source, for example an LPP source (Laser Produced Plasma, produced using a laser plasma) or a DPP source (Gas Discharged Produced Plasma). It can also be a synchrotron-based radiation source.
- the light source 3 can be a free electron laser (FEL).
- the illumination radiation 16, which emanates from the light source 3, is focused by a collector 17.
- the collector 17 can be a collector with one or more ellipsoidal and/or hyperboloid reflection surfaces.
- the at least one reflection surface of the collector 17 can be in grazing incidence (GI), i.e. with angles of incidence greater than 45 °, or in normal incidence (English: normal incidence, NI), i.e. with angles of incidence less than 45°, the illumination radiation 16 is applied.
- GI grazing incidence
- NI normal incidence
- the collector 17 can be structured and/or coated on the one hand to optimize its reflectivity for the useful radiation and on the other hand to suppress false light. After the collector 17, the illumination radiation 16 propagates through an intermediate focus in an intermediate focus plane 18.
- the intermediate focus plane 18 can represent a separation between a radiation source module, having the light source 3 and the collector 17, and the illumination optics 4.
- the lighting optics 4 comprises a deflection mirror 19 and, downstream of this in the beam path, a first facet mirror 20.
- the deflection mirror 19 it can be a flat deflection mirror or alternatively a mirror with an effect that influences the bundle beyond the pure deflection effect.
- the deflection mirror 19 can be designed as a spectral filter that separates a useful light wavelength of the illumination radiation 16 from false light of a wavelength that deviates from this.
- the first facet mirror 20 is arranged in a plane of the illumination optics 4, which is optically conjugate to the object plane 6 as a field plane, it is also referred to as a field facet mirror.
- the first facet mirror 20 includes a large number of individual first facets 21, which can also be referred to as field facets. Some of these first facets 21 are shown in FIG. 1 only as examples.
- the first facets 21 can be designed as macroscopic facets, in particular as rectangular facets or as facets with an arcuate or part-circular edge contour.
- the first facets 21 can be designed as flat facets or alternatively as convex or concave curved facets.
- the first facets 21 themselves can also each be composed of a large number of individual mirrors, in particular a large number of micromirrors.
- the first facet mirror 20 can in particular be designed as a microelectromechanical system (MEMS system).
- MEMS system microelectromechanical system
- the illumination radiation 16 runs horizontally, i.e. along the y-direction y.
- the second facet mirror 22 downstream of the first facet mirror 20. If the second facet mirror 22 is arranged in a pupil plane of the lighting optics 4, it will also known as a pupil facet mirror.
- the second facet mirror 22 can also be arranged at a distance from a pupil plane of the lighting optics 4.
- the combination of the first facet mirror 20 and the second facet mirror 22 is also referred to as a specular reflector. Specular reflectors are known from US 2006/0132747 A1, EP 1614 008 B1 and US 6,573,978.
- the second facet mirror 22 comprises a plurality of second facets 23. In the case of a pupil facet mirror, the second facets 23 are also referred to as pupil facets.
- the second facets 23 can also be macroscopic facets, which can have, for example, round, rectangular or even hexagonal edges, or alternatively they can be facets composed of micromirrors.
- the second facets 23 can have flat or alternatively convex or concave curved reflection surfaces.
- the lighting optics 4 thus forms a double faceted system.
- This basic principle is also known as the honeycomb condenser (Fly's Eye Integrator). It may be advantageous not to arrange the second facet mirror 22 exactly in a plane that is optically conjugate to a pupil plane of the projection optics 10.
- the second facet mirror 22 can be arranged tilted relative to a pupil plane of the projection optics 10, as described for example in DE 102017220586 A1. With the help of the second facet mirror 22, the individual first facets 21 are imaged into the object field 5.
- the second facet mirror 22 is the last beam-forming or actually the last mirror for the illumination radiation 16 in the beam path in front of the object field 5.
- a transmission optics may be arranged, which contributes in particular to the imaging of the first facets 21 in the object field 5.
- the transmission optics can have exactly one mirror, but alternatively also two or more mirrors, which are arranged one behind the other in the beam path of the illumination optics 4.
- the transmission optics can in particular include one or two mirrors for vertical incidence (NI mirror, normal incidence mirror) and/or one or two mirrors for grazing incidence (GI mirror, gracing incidence mirror).
- the projection optics 10 comprises a plurality of mirrors Mi, which are numbered consecutively according to their arrangement in the beam path of the projection exposure system 1. In the example shown in FIG. 1, the projection optics 10 comprises six mirrors M1 to M6. Alternatives with four, eight, ten, twelve or another number of mirrors Mi are also possible.
- the projection optics 10 is a double obscured optics.
- the penultimate mirror M5 and the last mirror M6 each have a passage opening for the illumination radiation 16.
- the projection optics 10 has an image-side numerical aperture that is larger than 0.5 and which can also be larger than 0.6 and, for example, 0 .7 or 0.75.
- Reflection surfaces of the mirrors Mi can be designed as free-form surfaces without an axis of rotational symmetry.
- the reflection surfaces of the mirrors Mi can be designed as aspherical surfaces with exactly one axis of rotational symmetry of the reflection surface shape.
- the mirrors Mi like the mirrors of the lighting optics 4, can have highly reflective coatings for the lighting radiation 16. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.
- the projection optics 10 has a large object image offset in the y direction y between a y coordinate of a center of the object field 5 and a y coordinate of the center of the image field 11.
- This object image offset in the y direction tung y can be approximately as large as a z-distance between the object plane 6 and the image plane 12.
- the projection optics 10 can in particular be anamorphic. In particular, it has different imaging scales ⁇ x, ⁇ y in x and y Direction x, y.
- a positive image scale ⁇ means an image without image reversal.
- a negative sign for the image scale ⁇ means an image with image reversal.
- the projection optics 10 thus leads to a reduction in size in the x direction x, that is to say in the direction perpendicular to the scanning direction, in a ratio of 4:1.
- the projection optics 10 leads to a reduction of 8:1 in the y direction y, that is to say in the scanning direction.
- Other image scales are also possible. Image scales of the same sign and absolutely the same in the x and y directions x, y, for example with absolute values of 0.125 or 0.25, are also possible.
- the number of intermediate image planes in the x and y directions x, y in the beam path between the object field 5 and the image field 11 can be the same or, depending on the design of the projection optics 10, can be different. Examples of projection optics with different numbers of such intermediate images in the x and y directions x, y are known from US 2018/0074303 A1.
- One of the second facets 23 is assigned to exactly one of the first facets 21 to form an illumination channel for illuminating the object field 5. This can in particular result in lighting based on Köhler's principle.
- the far field is broken down into a large number of object fields 5 using the first facets 21.
- the first facets 21 generate a plurality of images of the intermediate focus on the second facets 23 assigned to them.
- the first facets 21 are each imaged onto the reticle 7 by an assigned second facet 23, superimposed on one another, in order to illuminate the object field 5.
- the illumination of the object field 5 is in particular as homogeneous as possible. It preferably has a uniformity error of less than 2%. Field uniformity can be achieved by overlaying different lighting channels.
- the illumination of the entrance pupil of the projection optics 10 can be geometrically defined.
- the intensity distribution in the entrance pupil of the projection optics 10 can be adjusted. This intensity distribution is also referred to as the lighting setting or lighting pupil filling.
- a likewise preferred pupil uniformity in the area of defined illuminated sections of an illumination pupil of the illumination optics 4 can be achieved by redistributing the illumination channels. Further aspects and details of the illumination of the object field 5 and in particular the entrance pupil of the projection optics 10 are described below.
- the projection optics 10 can in particular have a homocentric entrance pupil. This can be accessible. It can also be inaccessible.
- the entrance pupil of the projection optics 10 cannot regularly be illuminated precisely with the second facet mirror 22. When imaging the projection optics 10, which images the center of the second facet mirror 22 telecentrically onto the wafer 13, the aperture rays often do not intersect at a single point. However, an area can be found in which the... pairwise determined distance of the aperture beams becomes minimal.
- This surface represents the entrance pupil or a surface conjugate to it in local space.
- this surface shows a finite curvature.
- the projection optics 10 have different positions of the entrance pupil for the tangential and sagittal beam paths.
- an imaging element in particular an optical component of the transmission optics, should be provided between the second facet mirror 22 and the reticle 7. With the help of this optical element, the different positions of the tangential entrance pupil and the sagittal entrance pupil can be taken into account.
- the second facet mirror 22 is arranged in a surface conjugate to the entrance pupil of the projection optics 10.
- the first facet mirror 20 is tilted relative to the object plane 6.
- the first facet mirror 20 is arranged tilted to an arrangement plane that is defined by the deflection mirror 19.
- the first facet mirror 20 is arranged tilted to an arrangement plane that is defined by the second facet mirror 22.
- Fig.2 shows a section of the lithography system 1 from Fig.1.
- An optical component 100 can be seen, which includes an optical element 102 and a support element 104.
- the optical element 102 can in particular be one of the mirrors M1 to M6 from FIG. 1, or an optical element from any other optical system (eg a measuring system for use in the lithography sector). In particular, it could be one of the mirrors from the lighting system 2 in FIG. 1.
- the optical element 102 can be a mirror, a lens, a polarization-optical element, in particular a retarder plate, a polarization filter or a rotation element which is designed to rotate a polarization direction, a color filter or an optical grating.
- the optical element 102 is a mirror.
- the optical element 102 has an optically effective surface 106.
- the illumination radiation 16 (see also Fig. 1) or the work light is reflected on this.
- the illumination radiation is preferably EUV radiation, that is, light with a wavelength between 0.1 and 30 nm.
- the optical element 102 is made of a first material. This can be, for example, ULE, Zerodur, calcium fluoride or quartz glass.
- the production of the optical element 102 is therefore comparatively expensive.
- the support element 104 carries the optical element 102. This means in particular that the forces resulting from the gravity acting on the optical element 102 are partially or completely introduced into the support element 104 from the optical element 102. Dynamic loads, such as those resulting from vibrations or other accelerations, can be added to gravity.
- the support element 104 is made of a second material.
- the second material can be made, for example, from quartz glass, optical glass, glass ceramic, silicon, SiSiC (silicon carbide) or steel, in particular Invar. Accordingly, the second material is a comparatively inexpensive material, so that the overall manufacturing costs for the optical component 100 are reduced.
- Fig.3 shows a section III from Fig.2.
- the first material G 102 differs from the second material G 104 .
- the ratio of the densities ⁇ G102 , ⁇ G104 of the first and second materials G 102 , G 104 (first material G 102 with the first density ⁇ G102 , second material G 104 with the second density ⁇ G104 ): where x is: 20%, preferably 10% and even further 5%.
- the above formulas (1) to (4) apply cumulatively.
- the first and second materials are comparable in terms of their density, so that there are acceptable differences between them in mechanical and/or thermal terms.
- the ratio of the densities ⁇ G102 , ⁇ G104 of the first and second materials G 102 , G 104 deviates within the above limits of 1, 1.0, 1.00, 1.000 or 1.0000.
- the first material is G 102 ULE with a density of 2.21 g/cm 3 (at 25 °C)
- the second material is G 104 , a quartz glass with a density of 2.20 g/cm 3 (at 25 °C). used.
- the ratio ⁇ G102 to ⁇ G104 is 1.005 and is therefore within the limits defined above.
- the first and second materials can differ, for example, in the proportion and size of inclusions, in particular bubbles 108, 110.
- the diameter D 110 of the bubbles 110 in the material G 104 is larger than the diameter D 108 of the bubbles 108 in the material G 102 .
- the material G 102 and G 104 may differ with respect to the proportion, expressed in volume percent, of the bubbles 108, 110.
- the first and second materials G 102 , G 104 can differ in a number of other properties: Examples mentioned below are a refractive index homogeneity, a stress birefringence, an intrinsic polarization birefringence, a transmittance, in particular in the case of Be - drive wavelength of the optical component 100, a density or a change in density in at least one spatial direction, a hardness or a change in hardness in at least one spatial direction, a slumping property, a roughness and a resistance to compaction and/or solarization in particular through the useful radiation.
- the thermal expansion coefficient of the first material G 102 is preferably at least ten times lower than a thermal expansion coefficient of the material G 104 , namely at a temperature of the first and second materials G 102 , G 104 at a mean expected operating temperature, which is, for example, in a range between 22 °C and 32°C.
- the solid-state joint 118 connects a pin 120 to the interface 116 so that it can pivot by two degrees of freedom.
- the pin 120 is moved along its longitudinal axis 122 with the help of the actuator 112 in order to adjust the position of the optical component 100 or the optically effective To change area 106 in space.
- the interface 116 could be any other mechanical interface.
- the support element 104 can have a measurement object 124.
- the measurement object 124 is a reflector. This reflects a measuring beam 126.
- the measuring beam 126 is emitted, for example, by an interferometer 128, which in turn is attached to a sensor frame 130.
- Fig.4 shows a top view IV from Fig.2, viewed against the z-direction (vertical direction) in Fig.2.
- the vectors x, y describe a horizontal plane that is perpendicular to the vector z.
- Fig.5 shows a view V from Fig.4.
- the optical element 102 has a main extension plane H 102 (see FIG. 5)
- the support element 104 has a main extension plane H 104 (see also FIG. 5).
- the main extension plane is the plane in which the respective component 102, 104 essentially extends.
- the respective extent in the main extension plane is larger than in any other plane.
- the main extension plane H 102 , H 104 lies in the xy plane.
- the main extension planes H 102 , H 104 lie one above the other and are each parallel to the plane of the paper.
- the optical element 102 and the support element 104 each have a maximum extent. This is the diameter D102 for the optical element 102 and its diagonal for the support element 104 A104 .
- the diameter D102 is less than 90%, preferably less than 80% and more preferably less than 75% of the diagonal A 104 .
- the optical element 102 and the support element 104 each have a maximum thickness.
- the thickness indicates the maximum expansion in the z-direction.
- the thickness T 102 (maximum thickness) of the optical element 102 shown in FIG. 5 is preferably less than 90%, preferably less than 80%, even more preferably less than 75% of the maximum thickness T 104 of the support element 104.
- the optical element 102 is in full contact with the surface 136 of the support element 4 with its back side 134, i.e. the side facing away from the optically effective surface 106.
- the surface 136 see also Fig.
- the optical element 102 with its back 134 (only) at least 50%, preferably at least 75% and even more preferably at least 90% is in contact with the support element 104.
- ribs could be formed on the surface 136, which correspondingly reduce the contact of the back 134 with the surface 136.
- the optical element 102 and the support element 104 are formed in one piece, and according to the exemplary embodiment according to FIGS. 2 to 5, these are cohesively formed with one another.
- the material connection is produced in that the optical element 102 and the support element 104 are preferably fused together, glued together or blown together.
- a thermal connection is preferred in which high temperatures above the glass transition temperature are set in an area surrounding the separating surface (back 134, surface 136), so that the optical element 102 and the support element 104 connect to one another there.
- frozen thermal stresses are largely avoided, which is achieved, for example, by maintaining a predetermined cooling curve in which a maximum value for the temporal temperature gradient is not exceeded, especially at a high temperature.
- Subsequent annealing steps can alternatively relax such tensions.
- a laser beam 138 from a laser source 140 can be used at the interface to fuse the surfaces 134, 136 together.
- 15 illustrates in a flowchart an exemplary embodiment of a method for producing the component 100, for example as described in FIGS. 2 to 5.
- the optical element 102 is manufactured with the material G 102 .
- the support element 104 is manufactured with the material G 104 .
- step K2 can take place before, after or simultaneously with step K1.
- the optical element 102 and the support element 104 are connected to one another (for example glued, blasted together, lasered or fused in some other way) such that the support element 104 carries the optical element 102.
- optical element 102 and the support element 104 are formed in one piece (for example by casting or in a slumping process, see also the explanations below with regard to FIGS. 13 and 14) and thus already in be connected to one another in a common manufacturing process.
- the support element 104 can first be produced and then the optical element 102 can be originally formed and thereby connected to the support element 104 at the same time.
- the support element 104 is produced on the optical element 102 by primary molding and is thereby connected to it.
- the optical element 102 and/or support element 104 are processed to remove material in order to produce the optical component 100 suitable for its intended purpose, in particular in a projection exposure system 1.
- a removal process can in particular include milling or polishing.
- the removal rate ie the volume of material removed per unit of time, for example in mm 3 /h, is varied more or less.
- the removal rate at which the first material G 102 is removed varies over the entire material-removing machining process, preferably by more than 20%, more preferably by more than 30%, even more preferably by more than 50% .
- the machining process can be adapted with high precision to the respective, in particular crystalline, structure of the first material G 102 .
- the removal rate varies with respect to the second material G 104 (again over the entire material-removing machining process) by less than 50%, preferably by less than 30% and even more preferably by less than 20%.
- High-precision processing of the second material G 104 is preferably not provided in order to reduce the effort.
- 6 shows a sectional view of an optical component 100 according to a further embodiment.
- the optical element 102 is embedded in the support element 104 in such a way that it rests and/or is fastened there with both its back side 134 and a peripheral surface 142 on a corresponding surface 136 or corresponding side surfaces 144 of the support element 104 .
- the surface 136 and the side surfaces 144 can define a cup-like depression 145 into which the optical element 102 is fitted.
- the peripheral surface 142 can be at an angle ⁇ of 90 ° to the back 134. However, other angles other than 90° are also conceivable.
- the angle ⁇ can be between 90° and 110° be. This can make it easier to fit the optical element 102 into the support element 104 or into the corresponding pot-like opening.
- 7 shows a further example of an optical element 100.
- the angle ⁇ spanned between the back 134 and the peripheral surface 142 is less than 90°, for example between 70° and 90°, in particular between 70° and 85°.
- the optical element 102 is cast into the support element 106 or into the cup-shaped opening formed by it.
- the optical element 102 is glued to the support element 104 using an adhesive 146.
- the back 134 of the optical element 102 is glued to the surface 136 of the support element 104.
- 8 accordingly shows an example of an indirect attachment of the optical element 102 to the support element 104.
- Figure 9 also shows an embodiment of an indirect attachment.
- the optical element 102 is attached to the support element 104 using an intermediate mount 148.
- the intermediate socket 148 can be made of metal, for example Invar.
- the intermediate mount 148 holds the optical element 102 at a distance from the support element 104.
- the intermediate mount 148 can be attached to the support element 104, for example with the aid of screws 150 or other fastening means.
- the optical element 102 can For example, it can be glued to holding elements, in particular feet 152, of the intermediate socket 148, although other fastening options are also conceivable.
- 10 shows an embodiment of an optical component 200, in which a lens is provided as the optical element 202. 10 shows the optical component 200 in a side view.
- the optical element 202 is integrated into a support element 204.
- the support element 204 is attached to a support frame 214 of a DUV lithography system, not shown.
- a socket 260 can be provided, which connects the support element 204 to the support frame 214.
- Working or useful light 262 falls on an optically effective surface 206 of the optical element 202 and penetrates it on its way to a wafer, not shown.
- the optical element 202 is formed in one piece with the support element 204 on its peripheral surface 242.
- the peripheral surface 242 describes an annular, closed contour.
- the contour can, for example, be circular, oval, rectangular with rounded corners, trapezoidal or otherwise suitable.
- the only decisive factor for the geometry of the peripheral surface 242 is that an image can be achieved with sufficient quality using the optical element 202.
- the optical element 202 is connected to the support element 204, in particular in a materially bonded manner. This can be accomplished in particular by fusing the optical element 202 with the support element 204.
- the optical component 200 or the optical element 202 and the support element 204 can together define a disk-shaped geometry. According to the exemplary embodiment, this is curved on at least one side, in the exemplary embodiment the side 264, which also contains the optically effective surface 206.
- the opposite side 266 can be straight.
- the optical component 200 or its sides (surfaces) 264, 266 can define a biconvex, plano-convex, concavo-convex, convex-concave, plano-concave or biconcave shape.
- the side 264 or the corresponding surface is formed continuously, that is to say in particular without a step, with the area of the optically effective surface 206.
- the light exit side 268 of the optical element 202 is also preferably formed continuously, that is to say in particular without a step, with the surrounding area of the side 266.
- FIG. 10 the main extension planes H 202 , H 204 of the optical element 202 and the support element 204 are shown (see Fig. 10).
- a diagonal A 202 in FIG. 11 corresponds to the maximum extent of the optical element 202 in its main extension plane H 202 .
- the maximum extent of the support element 204 in its main extension plane H 204 corresponds to its diameter D 204 (see Fig. 11).
- the maximum extent A 202 is less than 90% of the maximum extent D 204 , preferably less than 80% and even more preferably less than 75%.
- lens systems can also be produced in this way which have areas (lens 202) with a high refractive index homogeneity requirement, with a low voltage birefringence, with a transmittance for the operating wavelength that is above a predetermined limit and/or with a high level of robustness against irradiation the operating wavelength (for example with regard to compaction or solarization) and / or by a special, such as low or predetermined, oriented intrinsic Birefringence in the optically penetrated volume and relaxed requirements outside (in the area of the support element 204) are characterized.
- the assembly or insertion (see FIGS. 1 to 5, 8, 9 or FIGS. 6, 7, 10 and 11) of the optical element 102, 202 with or into the support element 104, 204 can lead to deformations, so that subsequent processing steps may be necessary to adjust the final fit.
- a simulation model is defined which includes the optical component 100, 200.
- a selection of relevant usage scenarios is made. These consist of one or more illumination distributions and associated (dominant) mask structures, each of which defines a diffraction distribution according to reticle 7 (see Fig. 1). Based on a given source power and the transmittance of all optical elements - in particular those of the optical elements 102, 202 - in the light path 16 (see FIG. 1), the locally variable irradiation intensity is determined for the relevant optical element 102, 202. Based on the absorption behavior of the optical element 102, 202, which may be dependent on the angle of incidence, it is determined which power is locally absorbed in each case. In a second step S2, various designs of the optical component 100, 200, as illustrated for example with reference to FIGS.
- a temperature distribution is determined in each variant, taking into account the irradiation history, for which purpose, for example, a finite element simulation can be used.
- a resulting change in refractive index and/or surface deformation is then calculated.
- the resulting aberration pattern or aberration level is determined using an optical calculation.
- the aberration level can be defined, for example, as an RMS ("root mean square") value of the wavefront or as a maximum of all decomposition coefficients of the wavefront according to Zernike functions up to order 100.
- a manufacturing effort for the optical component 100, 200 can also be determined. This can include, for example, machine hours (e.g. on a milling machine), material costs, etc.
- the simulated actual aberration level (here also "actual property” or this is one of the “properties of the optical component") is compared with a target aberration level (here also "target”property”) compared.
- a simulated actual RMS value of the wavefront can be compared with a target RMS value of the wavefront.
- a simulated actual manufacturing effort can be compared with a target manufacturing effort. If either the simulated actual property does not correspond to the desired target property (e.g.
- steps S4 and S5 can be carried out individually or selectively.
- the simulation model is adjusted.
- a dimension of the optical elements 102, 202 and/or the support elements 104, 204 is changed.
- the first and/or second material G 102 , G 104 can also be changed.
- the first material G 102 can be improved.
- a material with an improved refractive index homogeneity with a lower proportion and/or a smaller size of inclusions, a lower stress birefringence or a lower contrast loss, a specific intrinsic stress birefringence, a higher transmittance, a higher density or hardness or less change therein in at least one spatial direction, an improved slumping property, less compaction or solarization can be used.
- the optical quality of the second material can be reduced in order to reduce the manufacturing effort and thus meet a manufacturing budget.
- a series of refining manufacturing steps such as pre-polishing to achieve a required surface quality, for example with regard to roughness, can only be carried out for the optical element 102, 202 or the first material G 102 , but not for the support element 104 , 204.
- the addition of appropriate correction means can be such that it only slightly increases the manufacturing effort.
- the correction means can, for example, include further optical elements that can be manipulated in rigid body degrees of freedom in the beam path before or after the optical element 102, 202. Furthermore, thermally influenced optical parts, deformable mirrors, Alvarez elements, etc. can be provided in the beam path before and/or after the optical element 102, 202. This serves in particular to correct residual optical errors in the simulated projection exposure system 1 (or another optical system).
- An example of such a correction means is the actuator 112 (see FIG. 2), which is set up to manipulate the position of the optical element 102 in space (see FIG. 2). If the actual aberration level corresponds to the target aberration level (or is below it) and the actual manufacturing effort is below the target manufacturing effort, i.e.
- a step S6 the optical Component 100, 102 manufactured according to the simulated characteristics.
- 13 shows a process step in the production of the optical element 102 in a slumping process.
- Fig. 13 shows a section of a mold 300
- Fig. 14 shows a plan view XIV from Fig. 13.
- the production of the optical element 102 using the slumping process corresponds, for example, to process step K1 shown in FIG. 15.
- several layers 302 to 306 with layer thicknesses S 302 are applied to the mold 300 up to S 306, for example, made of a glass substrate.
- the still soft layers 302 to 306 take the shape of an outer (convex) contour 308 of the mold 300, so that the optically effective surface 106 is produced with the desired contour.
- the three layers 302 to 306 shown are purely exemplary. In reality, multiples of such layers are created.
- the support element 104 can also be produced in a (complex) slumping process. Alternatively, the support element 104 can be produced without using a slumping process, for example by a material-removing process, such as milling and/or polishing, from a solid material.
- an actual layer thickness of the first material G 102 can be less 10%, preferably less 20% or more preferably less 50% closer to the respective target layer thickness than for the second material G 104 .
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Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102022204268.9A DE102022204268A1 (de) | 2022-04-29 | 2022-04-29 | Optisches Bauteil für eine Lithographieanlage |
| PCT/EP2023/060749 WO2023208894A1 (de) | 2022-04-29 | 2023-04-25 | Optisches bauteil für eine lithographieanlage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP4515306A1 true EP4515306A1 (de) | 2025-03-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP23722303.7A Pending EP4515306A1 (de) | 2022-04-29 | 2023-04-25 | Optisches bauteil für eine lithographieanlage |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250044712A1 (de) |
| EP (1) | EP4515306A1 (de) |
| DE (1) | DE102022204268A1 (de) |
| WO (1) | WO2023208894A1 (de) |
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| DE102023211214A1 (de) * | 2023-11-13 | 2025-05-15 | Carl Zeiss Smt Gmbh | Vorrichtung zum Einstellen einer optischen Transmission |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573978B1 (en) | 1999-01-26 | 2003-06-03 | Mcguire, Jr. James P. | EUV condenser with non-imaging optics |
| DE19933248A1 (de) | 1999-07-15 | 2001-02-15 | Zeiss Carl Fa | Athermalisiertes Teleskop |
| DE10317667A1 (de) | 2003-04-17 | 2004-11-18 | Carl Zeiss Smt Ag | Optisches Element für ein Beleuchtungssystem |
| US7986472B2 (en) * | 2005-05-31 | 2011-07-26 | Carl Zeiss SMT, AG. | Optical element module |
| DE102008009600A1 (de) | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie |
| US8699141B2 (en) * | 2009-03-13 | 2014-04-15 | Knowles Electronics, Llc | Lens assembly apparatus and method |
| CN102472980B (zh) | 2009-08-18 | 2015-02-25 | 卡尔蔡司Smt有限责任公司 | 极紫外微光刻的基底与反射镜以及制造它们的方法 |
| US8810775B2 (en) * | 2010-04-16 | 2014-08-19 | Media Lario S.R.L. | EUV mirror module with a nickel electroformed curved mirror |
| DE102011084117A1 (de) | 2011-10-07 | 2013-04-11 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für den EUV-Wellenlängenbereich, Verfahren zur Erzeugung und zur Korrektur eines solchen Elements, Projektionsobjektiv für die Mikrolithographie mit einem solchen Element und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| DE102012223669A1 (de) | 2012-12-19 | 2013-11-21 | Carl Zeiss Smt Gmbh | Wellenfrontkorrektur von beschichteten Spiegeln |
| DE102015201141A1 (de) | 2014-02-17 | 2015-08-20 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung korrigierter optischer Komponenten für die EUV-Mikrolithographie sowie entsprechende optische Komponenten |
| DE102014204171A1 (de) * | 2014-03-06 | 2015-09-24 | Carl Zeiss Smt Gmbh | Optisches Element und optische Anordnung damit |
| DE102014225197A1 (de) | 2014-12-09 | 2015-11-26 | Carl Zeiss Smt Gmbh | Verfahren zum Verändern einer Oberflächenform, reflektives optisches Element, Projektionsobjektiv und EUV-Lithographieanlage |
| DE102015226531A1 (de) | 2015-04-14 | 2016-10-20 | Carl Zeiss Smt Gmbh | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik |
| DE102015223795A1 (de) | 2015-11-30 | 2016-01-28 | Carl Zeiss Smt Gmbh | Verfahren zum Bearbeiten eines optischen Elements |
| DE102016203591A1 (de) | 2016-03-04 | 2017-09-07 | Carl Zeiss Smt Gmbh | Vorrichtung zum Verändern einer Oberflächenform eines optischen Elements mittels Elektronenbestrahlung |
| DE102017205043A1 (de) | 2017-03-24 | 2018-04-12 | Carl Zeiss Smt Gmbh | Optisches system sowie lithographieanlage |
| DE102017220586A1 (de) | 2017-11-17 | 2019-05-23 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel, Beleuchtungsoptik und optisches System für eine Projek-tionsbelichtungsanlage |
| DE102019217530A1 (de) * | 2019-11-13 | 2019-12-24 | Carl Zeiss Smt Gmbh | Optisches element und verfahren zum herstellen eines optischen elements |
-
2022
- 2022-04-29 DE DE102022204268.9A patent/DE102022204268A1/de active Pending
-
2023
- 2023-04-25 EP EP23722303.7A patent/EP4515306A1/de active Pending
- 2023-04-25 WO PCT/EP2023/060749 patent/WO2023208894A1/de not_active Ceased
-
2024
- 2024-10-24 US US18/925,677 patent/US20250044712A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023208894A1 (de) | 2023-11-02 |
| US20250044712A1 (en) | 2025-02-06 |
| DE102022204268A1 (de) | 2023-11-02 |
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