EP4394902A4 - Reflektierende elektrode für ein lichtemittierendes element - Google Patents

Reflektierende elektrode für ein lichtemittierendes element

Info

Publication number
EP4394902A4
EP4394902A4 EP22861352.7A EP22861352A EP4394902A4 EP 4394902 A4 EP4394902 A4 EP 4394902A4 EP 22861352 A EP22861352 A EP 22861352A EP 4394902 A4 EP4394902 A4 EP 4394902A4
Authority
EP
European Patent Office
Prior art keywords
light
emitting element
reflective electrode
reflective
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22861352.7A
Other languages
English (en)
French (fr)
Other versions
EP4394902A1 (de
Inventor
Shigekazu Tomai
Satoshi Katsumata
Masashi Oyama
Kengo Nagata
Taichi Matsubara
Maki Kushimoto
Yoshio Honda
Hiroshi Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Tokai National Higher Education and Research System NUC
Original Assignee
Idemitsu Kosan Co Ltd
Tokai National Higher Education and Research System NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd, Tokai National Higher Education and Research System NUC filed Critical Idemitsu Kosan Co Ltd
Publication of EP4394902A1 publication Critical patent/EP4394902A1/de
Publication of EP4394902A4 publication Critical patent/EP4394902A4/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
EP22861352.7A 2021-08-25 2022-08-23 Reflektierende elektrode für ein lichtemittierendes element Pending EP4394902A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021136988 2021-08-25
PCT/JP2022/031704 WO2023027064A1 (ja) 2021-08-25 2022-08-23 発光素子用の反射電極

Publications (2)

Publication Number Publication Date
EP4394902A1 EP4394902A1 (de) 2024-07-03
EP4394902A4 true EP4394902A4 (de) 2025-10-01

Family

ID=85322821

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22861352.7A Pending EP4394902A4 (de) 2021-08-25 2022-08-23 Reflektierende elektrode für ein lichtemittierendes element

Country Status (6)

Country Link
US (1) US20250241093A1 (de)
EP (1) EP4394902A4 (de)
KR (1) KR20240046512A (de)
CN (1) CN117813695A (de)
TW (1) TW202318685A (de)
WO (1) WO2023027064A1 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080105890A1 (en) * 2004-08-31 2008-05-08 Samsung Electro-Mechanics Co., Ltd. Reflective electrode and compound semiconductor light emitting device including the same
US20190334061A1 (en) * 2018-04-27 2019-10-31 Samsung Electronics Co., Ltd. Semiconductor light emitting device
EP3859046A1 (de) * 2018-09-26 2021-08-04 Idemitsu Kosan Co., Ltd. Oxidischer mehrschichtkörper und herstellungsverfahren dafür

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4431925B2 (ja) * 2000-11-30 2010-03-17 信越半導体株式会社 発光素子の製造方法
JP2011060917A (ja) * 2009-09-08 2011-03-24 Rohm Co Ltd 半導体発光素子
JP2013120829A (ja) 2011-12-07 2013-06-17 Sharp Corp 窒化物半導体紫外発光素子
JP6771065B2 (ja) * 2014-01-20 2020-10-21 ローム株式会社 発光素子および発光素子パッケージ
JP6727185B2 (ja) * 2017-12-28 2020-07-22 日機装株式会社 窒化物半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080105890A1 (en) * 2004-08-31 2008-05-08 Samsung Electro-Mechanics Co., Ltd. Reflective electrode and compound semiconductor light emitting device including the same
US20190334061A1 (en) * 2018-04-27 2019-10-31 Samsung Electronics Co., Ltd. Semiconductor light emitting device
EP3859046A1 (de) * 2018-09-26 2021-08-04 Idemitsu Kosan Co., Ltd. Oxidischer mehrschichtkörper und herstellungsverfahren dafür

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2023027064A1 *

Also Published As

Publication number Publication date
TW202318685A (zh) 2023-05-01
KR20240046512A (ko) 2024-04-09
US20250241093A1 (en) 2025-07-24
WO2023027064A1 (ja) 2023-03-02
EP4394902A1 (de) 2024-07-03
JPWO2023027064A1 (de) 2023-03-02
CN117813695A (zh) 2024-04-02

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