EP4364172A2

EP4364172A2 - Electrical resistive element on a substrate having a thin uniform barrier layer

Info

Publication number: EP4364172A2
Application number: EP22760706.6A
Authority: EP
Inventors: Thomas Asperger; Sven Hüttner; Jörg HÜTTNER
Original assignee: Vishay Electronic GmbH
Current assignee: Vishay Electronic GmbH
Priority date: 2021-08-16
Filing date: 2022-08-01
Publication date: 2024-05-08
Also published as: TW202324457A; DE102021121240A1; IL310088A; CN117795628A; KR20240044457A; WO2023020815A3; CA3223011A1; WO2023020815A2

Abstract

An electrical resistance component comprises an electrically insulating carrier, at least one resistance layer on the carrier and at least one electrical terminal formed on the carrier and connected to the resistance layer, wherein the resistance layer has a surface structure along its surface on a side facing away from the carrier. The resistance layer is also covered by a barrier layer, which comprises an inorganic material and which replicates the surface structure of the resistance layer throughout and with a uniform thickness.

Description

Vishay Electronics GmbH

Electrical resistance component

The invention relates to an electrical resistance component with an electrically insulating carrier, at least one resistance layer on the carrier and at least one electrical connection formed on the carrier and connected to the resistance layer. The resistance layer also has a surface structure along its surface on a side facing away from the carrier and is covered by a barrier layer.

Electrical resistance components of this type can be used in numerous applications, for example in order to be able to specifically limit a current flow between two further electrical components of an electrical circuit. Furthermore, such electrical resistance components are often used in microchips, which is why an increasing reduction in the size of the components is being sought, in which case it may be necessary in particular for the components used to be flat or thin. At the same time, however, electrical resistance components usually require high accuracy, so that, for example, a narrow tolerance range of between 1% and 0.01% can be specified. Furthermore, a low temperature coefficient of between 1 ppm/K and 50 ppm/K can be required for a resistance component in order to ensure reliable use of the electrical resistance component under load. In addition, the desired long-term stability of electrical resistance components requires protection against environmental influences, whereby, for example, requirements for a maximum change of 0.1% to 0.5% after 1000 hours of loading at around 10% nominal load, 85% humidity and 85°C can be met.

In particular with small and/or flat electrical resistance components, however, the problem arises that the resistance layer can have a high sensitivity to corrosion, in particular due to anodic oxidation, due to its relatively small layer thickness when an electrical voltage is applied at the same time. In principle, this problem can be countered in that the resistance layer is covered by a barrier layer on a side facing away from the carrier, in order to protect the resistance layer from the influence of moisture. However, the attachment of such a barrier layer requires gentle and therefore often complex processes, since the resistance layer must not be changed or damaged by the attachment process, in order not to be damaged by the attachment of the barrier layer to change a previously precisely set characteristic of the electrical resistance component, in particular a resistance value.

For example, one or more layers of an organic compound, for example an epoxy resin or a silicone resin, can be used as the barrier layer. However, sufficient protection against moisture in vapor form, which can come into contact with the resistive layer through an organic barrier layer, cannot usually be achieved with organic materials, so that organic barrier layers can only offer incomplete protection of the resistive layer.

As an alternative to this, barrier layers for electrical resistance components can also be formed by inorganic materials in order to increase the protective effect against vaporous moisture. For this purpose, the barrier layer can be applied to the resistance layer, for example by a sputtering method, which, however, usually requires specific materials whose production is comparatively expensive. In addition, such inorganic barrier layers can only form a hermetic seal of the resistance layer with a relatively high layer thickness and the surface of the resistance layer can be covered by a sputtering process, in particular non-conformally, so that due to the surface structure of the resistance layer, depressions opposite the barrier layer or microscopic cavities between the resistance layer and of the barrier layer can remain. In order to cover these cavities, the previously mentioned undesirably large layer thickness of the barrier layer is necessary, while the cavities can also generally impair the desired protective effect of the resistance layer by the barrier layer.

It is an object of the invention to provide an electrical resistance component which can be made flat or thin and has a high level of stability with respect to environmental influences and in particular the influence of moisture.

This object is achieved by an electrical resistance component having the features of claim 1 and in particular in that the barrier layer comprises an inorganic material and that the barrier layer simulates the surface structure of the resistance layer continuously and with a uniform thickness.

By covering the resistive layer with a continuous barrier layer of uniform thickness, which imitates the surface structure of the resistive layer along its surface, a conformal covering of the resistive layer can be achieved. In this case, each point on the surface of the resistance layer on the side of the resistance layer facing away from the carrier can be in direct contact with the barrier layer. However, continuous direct contact of the barrier layer with the resistance layer or a current-conducting layer of the resistance layer is not absolutely necessary; what is important is that the barrier layer forms a continuous barrier over the resistive layer.

Replicating the surface structure of the resistive layer along its surface means that not only the course of the transitions between the carrier and the resistive layer is replicated (e.g. a stepped transition between the absence and the presence of the resistive layer on the carrier); but the surface structure in those areas in which the resistance layer is present at all is reproduced by the barrier layer with a uniform thickness. As a result, in particular gaps in the barrier layer can be avoided, so that reliable hermetic sealing of the resistance layer can be achieved even with a small layer thickness. Due to the continuous covering and reproduction of the resistance layer, the resistance layer is not only covered by the barrier layer in sections, but in particular over the entire surface, in order to seal the entire surface of the resistance layer against the penetration of moisture.

The electrical resistance component can, for example, be in the form of a thin-film resistance component (also referred to as a thin-film resistance component). In the case of such resistance components, the resistance layer can be applied to the carrier by a sputtering method, for example, so that the resistance layer can form a thin film, in particular a thin metal film, on the carrier. In addition, the resistance layer of a thin-film resistance component can have a layer thickness which is less than a roughness of a surface of the carrier. For example, a resistance layer of an electrical resistance component designed as a thin-film resistance component can have a layer thickness in a range from 50 nanometers (nm) to 500 nanometers (nm). On the other hand, a carrier that is usually used in such electrical resistance components can, for example, have a surface with a roughness of 1 micrometer (pm) to 3 micrometers (pm), so that the surface structure of the resistance layer on the side facing away from the carrier is primarily determined by the roughness of the surface of the Carrier can be determined. A roughness of the surface structure of the resistance layer and/or another surface mentioned in connection with the invention can be determined in particular by the fifth or sixth order of the shape deviation according to DIN 4760.

As an alternative to being designed as a thin-film resistor component, the electrical resistor component can also be designed as a thick-film resistor component, for example. In such electrical resistance components, the resistance layer can be applied or baked onto the carrier, in particular in the form of a paste, for example a glass paste, which contains metal particles or metal oxide particles, wherein application by means of screen printing can be provided in particular. Such resistance layers can have a layer thickness of up to about 10 μm, so that in the case of an electrical resistance component designed as a thick-film resistance component, the layer thickness of the resistance layer can exceed a roughness of the surface of the carrier, which in turn can be in a range from 1 μm to 3 μm . In such an electrical resistance component, however, the resistance layer itself can have a roughness which can ultimately determine the surface structure of the resistance layer on the side facing away from the carrier. For example, a roughness of a surface of a resistive layer designed as a thick-film resistive layer can also be in a range of approximately 0.1 μm to 3 μm.

A resistance value of an electrical resistance component, which is designed as a thick-film resistance component, can be determined in particular by the density of the metal particles or the metal oxide particles in the paste, which is applied to the carrier as a thick-film resistance layer. However, provision can also be made to provide such a resistive layer with a trimming structure, for example after the resistive layer has been applied to the carrier by a lithographic treatment or a treatment using a laser beam, in order to define an exact resistance value of the electrical resistance component. In the case of an electrical resistance component designed as a thin-film resistance component, however, the resistance layer can initially form a thin and closed metal film, as already explained, which can, however, be provided with a trimming structure in order to precisely set the desired resistance value.

Furthermore, the resistance layer can comprise electrically conductive and optionally electrically non-conductive materials, regardless of whether the electrical resistance component is designed as a thin-film resistance component or as a thick-film resistance component. In addition, the resistive layer can include a current-conducting layer summarize, on which - as part of the resistance layer - an additional, but non-conformal and in particular electrically non-conductive material layer can be applied in particular sections. For example, such an additional material layer of the resistance layer can serve to stabilize the current-conducting part of the resistance layer. In particular, such a material layer can comprise an inorganic material and be applied, for example by sputtering, to an electrically conductive layer of the resistance layer, so that the material layer can accumulate in particular at points on the surface of the electrically conductive layer that are higher than the carrier, while depressions are covered with a material layer of lesser thickness or may remain uncovered by the layer of material. Such an additional material layer of the resistive layer can have a thickness at the sections where the additional material layer is present at all, which is significantly less than the thickness of the current-conducting layer of the resistive layer and/or which approximately corresponds to the thickness of the barrier layer or is less than this.

In this respect, such a material layer of the resistance layer—with regard to an additional current-conducting layer that actually determines the resistance value of the electrical resistance component—may at least partially influence the surface structure of the resistance layer on a side facing away from the carrier. Accordingly, the barrier layer, which simulates the surface structure of the resistance layer, can contact the electrically conductive layer in sections and the additional material layer in sections in the case of such resistance layers. Optionally, if an electrically conductive layer is completely covered by an additional but non-conformal layer of material, the barrier layer can also only be in contact with the additional layer of material and not with an electrically conductive layer of the resistive layer. However, such a material layer as part of the resistance layer differs from the barrier layer in particular in that the additional material layer does not cover the current-conducting layer of the resistance layer conformally, ie not with a uniform thickness, and/or not continuously. However, such an additional material layer is not mandatory; rather, the resistance layer can also be formed by an electrically conductive layer which is directly covered by the barrier layer.

Since the resistance layer has the surface structure along its surface, the surface structure can determine, in particular, a microscopic roughness of the surface of the resistance layer. For example, the resistance layer, in particular of a thin-film resistance component, can be applied to the insulating carrier by physical vapor deposition, for example a sputtering method. Such a contradiction The base layer can have a thickness of 50 nanometers to 500 nanometers, while a roughness of the surface of the carrier can, however, be in a range from approx. 0.1 μm to 3 μm. In this respect, the roughness of the surface of the resistance layer in a thin-film resistance component can essentially be determined by the roughness of the surface of the carrier, so that the surface structure of the resistance layer can primarily follow the roughness of the carrier. In the case of an electrical resistance component designed as a thick-film resistance component, however, the thickness of the resistance layer can exceed the roughness of the surface of the carrier, so that with such resistance components the surface structure of the resistance layer on the side facing away from the carrier is not affected by the already balanced roughness of the surface of the carrier, but can be determined by the roughness of the surface of the resistive layer itself. Due to the application of such thick-film resistance layers, for example by means of screen printing, this roughness can also be in a range from approximately 0.1 μm to 3 μm.

In particular when the electrical resistance component is designed as a thin-film resistance component, the resistance layer can also have gaps which can arise as a result of a shadowing effect when the resistance layer is applied to the carrier. For example, such a resistance layer can be applied to the carrier by a directional method, such as a sputtering method. The substrate may have an overshadowed portion which may be overlapped by and "shadowed" by another portion of the substrate with respect to a direction along which the resistive layer is applied. In such cases, the material used to form the resistive layer may not or not fully reach the shadowed section, so that the surface of the carrier in the shadowed section is not covered by the resistive layer, but the resistive layer has a gap or a "pinhole". . Since the barrier layer is applied continuously and replicates the surface structure of the resistance layer with a constant thickness, such gaps in the resistance layer, i.e. the carrier exposed in the area of the gap, can also be covered uniformly with the barrier layer, with the barrier layer being "pinhole-free" or gapless is trained. Any edges of such gaps in the resistance layer can also be covered by the barrier layer, so that the edges can also be protected from contact with moisture. In the gaps in the resistance layer, the barrier layer can be applied in particular directly to the surface of the carrier. The barrier layer can follow the surface structure of the resistance layer, so that the roughness of the surface of the resistance layer can determine the roughness on a surface of the barrier layer on a side facing away from the resistance layer. The surface structure is therefore in particular a structure on the surface of the resistive layer itself and not larger structures or interruptions in the resistive layer which, in particular in the case of an electrical resistive component designed as a thick-film resistive component, for example by a lithographic treatment or a treatment using a laser beam the application of the resistive layer on the carrier can be formed in order to trim a resistive layer to a specific resistance value, for example.

The thickness of the barrier layer can correspond to a distance between the surface of the barrier layer on a side facing away from the resistance layer and the surface of the resistance layer on the side facing away from the carrier, this distance being determined at a particular point on the surface of the resistance layer, in particular along a normal of a tangent can, which describes the curvature of the surface structure of the resistance layer at the respective point on the surface of the resistance layer. The “thickness” of the barrier layer can thus differ from a “height” of the barrier layer, particularly in the case of inclined courses, and the barrier layer can also have a surface structure on a side facing away from the resistance layer and not be flat. The surface structure of the resistance layer is thus not compensated for or covered by the barrier layer, but is essentially reproduced.

Since the barrier layer simulates the surface structure of the resistance layer with a uniform thickness, a surface structure of the barrier layer can follow the surface structure of the resistance layer along its surface on a side facing away from the resistance layer. A three-dimensional course of the surface structure of the barrier layer on the side facing away from the resistance layer can therefore essentially reflect the three-dimensional course of the surface structure of the resistance layer on the side facing away from the carrier, with a distance between the surface of the resistance layer on the side facing away from the carrier and the surface of the Barrier layer on the side facing away from the resistance layer along a respective normal of the surface of the resistance layer can always correspond to the thickness of the barrier layer. Conversely, a surface structure of the barrier layer on a side facing the resistance layer can to a certain extent form a relief of the surface structure of the resistance layer on the side facing away from the carrier. In particular, can a three-dimensional course of the surface structure of the resistance layer along its surface on the side facing away from the carrier and a three-dimensional course of the surface structure of the barrier layer on a side facing away from the resistance layer thus correspond to one another, so that the surface of the resistance layer on the side facing away from the carrier at every point can be directly in contact with the barrier layer.

By replicating the surface structure of the resistance layer and in particular a sufficiently small thickness of the barrier layer, a surface structure of the barrier layer on a side facing away from the resistance layer can essentially correspond to the surface structure of the resistance layer, apart from shifts or equalization due to the thickness of the barrier layer. In particular, a surface of the barrier layer can be shifted by the thickness of the barrier layer in relation to the surface of the resistance layer, so that, for example, an indentation in the surface structure of the resistance layer, which can have a specific width or a specific distance between opposing boundaries, can be seen as an indentation in the Surface structure of the barrier layer can be reproduced on the side facing away from the resistance layer, the width of which is reduced, for example, by approximately twice the thickness of the barrier layer compared to the width of the depression in the surface structure of the resistance layer. On the other hand, due to the uniform coverage of the resistance layer, respective depths of such depressions in the surface structure of the resistance layer on the side facing away from the carrier and in the surface structure of the barrier layer on the side facing away from the resistance layer can correspond.

The roughness of the surface structure of the barrier layer on its side facing away from the resistance layer can therefore be similar to the roughness of the surface structure of the resistance layer, although the roughness of the surface structure of the barrier layer can be somewhat less than the roughness of the surface structure of the resistance layer due to a certain leveling out of the covered surface structure resistance layer.

Such a replication of the surface structure of the resistance layer enables a tight seal between the resistance layer and the barrier layer in particular, despite the thin layer thickness, in order to reliably protect the resistance layer from corrosion and the resulting changes in the electrical characteristics of the electrical resistance component, such as an electrical resistance. In particular, microscopic depressions and cavities in the surface structure of the Wi- The resistance layer or gaps in the resistance layer are precisely covered or lined by the barrier layer and not just covered, so that such cavities can be avoided between the resistance layer and the barrier layer. The barrier layer can cover the surface of the resistance layer completely and "pinhole-free", in particular also when such cavities or gaps are present in the surface of the resistance layer.

However, it is also possible with a barrier layer that simulates the surface structure of the resistance layer for a depression or cavity in the surface structure of the resistance layer to have a width that is less than twice the thickness of the barrier layer, so that microscopic depressions and/or cavities of this type may appear can be completely filled and closed by the barrier layer. In the area of such filled cavities, but in particular exclusively in the area of such filled cavities, the thickness of the barrier layer, starting from one side of the depression or of the cavity in the direction of the other side of the depression of the cavity, can therefore also, if necessary, correspond to the distance between the two sides of the depression or of the Correspond to each other cavity. In addition, with such narrow cavities or indentations, the thickness of the barrier layer, viewed from a lowest point of the indentation or cavity, may correspond to the depth of the indentation or cavity. In this case too, however, the entire resistance layer is ultimately covered with a barrier layer of uniform thickness, since these deviations are not determined by the barrier layer itself, but result from the specific structure of the surface of the resistance layer in such an area.

By forming the barrier layer with an inorganic material, the resistive layer can be reliably protected against an influence of moisture in vapor form, which can permeate conventional organic barrier layers. Although such a conformal barrier layer with an inorganic material, as explained in the introduction, cannot be achieved by the sputtering that is customary for electrical resistance components, in which cavities remain between the resistance layer and the barrier layer, it is possible, for example, to apply a conformal inorganic barrier layer by atomic layer deposition.

In such a method of applying the barrier layer by atomic layer deposition, the resistive layer may be first covered by chemical vapor deposition in a reaction chamber, for example, with a first reactant which reacts in a self-limiting manner with the surface of the resistive layer. The self- The bordering reaction allows the surface of the resistive layer to be covered with at most one atomic layer of the first reactant, so that a conformal layer can be formed. In a subsequent flushing or evacuation step, unreacted gas of the first reactant and any reaction products can be removed from the reaction chamber, so that only the layer formed by the reactant on the surface of the resistive layer can remain. Then, in a further step, a second reactant can be introduced into the reaction chamber which self-limitingly reacts with the layer of the first reactant covering the resistive layer to reactivate the layer formed by the first reactant for a reaction of the first reactant. After a new flushing or evacuation step to remove residues of the second reactant, the steps mentioned can be repeated as a respective cycle of atomic layer deposition, in particular, due to the self-limiting character of the reactions in each run a maximum of one atomic layer on the respective previously created layer or can be applied to the resistance layer of the electrical component in the first step. This makes it possible to reproduce the surface structure of the resistive layer in the respective process steps of the atomic layer deposition, so that a conformal covering of the resistive layer and a hermetic seal can be achieved even with small layer thicknesses. In principle, it can also be provided that different materials are used in different cycles, so that individual layers of the barrier layer applied by atomic layer deposition can be formed from different materials or different chemical compounds.

However, minor differences in the thickness of the barrier layer can also occur in an atomic layer deposition process, for example if a respective process step is interrupted or a purging or evacuation step is initiated before a complete atomic layer has been formed and minor defects remain. However, these imperfections can be compensated for directly in a subsequent step, so that a complete hermetic sealing of the resistance layer can be achieved from a thickness of the barrier layer of around 10 nanometers or around 20 nanometers. In principle, the thickness of the barrier layer can be determined primarily by the number of cycles of atomic layer deposition that have been carried out. Furthermore, it can be provided to carry out cycles of the atomic layer deposition until the barrier layer has a thickness of approximately 50 nanometers to approximately 500 nanometers or a thickness of approximately 100 nanometers in order to be able to achieve a reliable hermetic seal with efficient process execution. In general, a method of atomic layer deposition is explained, for example, in US Pat. No. 4,058,430. Further embodiments of the invention can be found in the dependent claims, the description and the figures.

In some embodiments, a ratio between a minimum thickness and a maximum thickness of the barrier layer may be greater than 0.8, and more preferably greater than 0.9. The barrier layer can thus be formed conformingly along the surface structure of the resistance layer and enable an exact simulation of the surface structure of the resistance layer without significant differences in thickness, so that a surface structure of a surface of the barrier layer on a side facing away from the resistance layer has the surface structure of the resistance layer on the carrier Averted side can play essentially. As explained, the thickness of the barrier layer can be determined in particular along a respective normal to the surface structure of the resistance layer at a specific measuring point, with slight differences in thickness of the barrier layer being caused, for example, by a small number of defects in individual layers occurring during atomic layer deposition to attach the barrier layer can.

In some embodiments, the thickness of the barrier layer can be less than a roughness of a surface of the carrier and/or less than a roughness of the surface structure of the resistance layer. As already explained, in the case of a thin-film resistance component, the thickness of the resistance layer can be less than the roughness of the surface of the carrier on which the resistance layer is applied. The surface structure of the resistive layer on the side facing away from the carrier can therefore be primarily determined by the roughness of the surface of the carrier and ultimately have a comparable but slightly smaller roughness than the surface of the carrier due to the thickness of the resistive layer. In such a case, the thickness of the barrier layer can therefore be less than the roughness of the surface of the carrier and the roughness of the surface structure of the resistance layer. In the case of a thick-film resistance component, on the other hand, the resistance layer can have a thickness which exceeds the roughness of the surface of the carrier, so that the resistance layer covers the roughness of the surface of the carrier and the surface structure of the resistance layer can be directly determined by its roughness, with the thickness of the Barrier layer can be less than the roughness of the resistive layer. Irrespective of the formation of the resistance layer, however, the barrier layer can evenly reproduce the surface structure without the roughness of the surface structure of the resistance layer being completely evened out or indentations being completely filled. The barrier layer can cover the resistive layer as a thin layer and still allow for a hermetic seal. With such a barrier layer, a roughness of the surface structure of the resistance layer can not only be covered or depressions caused by roughness can be spanned, but the roughness of the surface structure can be directly reproduced by the barrier layer, so that the surface of the resistance layer can be completely contacted by the barrier layer.

In some embodiments, the roughness of the surface structure of the barrier layer on its side facing away from the resistive layer can have a value in the range of 0.2 to 1.0 times the value of the roughness of the surface structure of the resistive layer. Accordingly, the barrier layer can have a uniform thickness with at most minor deviations, so that a surface structure of the barrier layer on a side facing away from the resistance layer can essentially be predetermined by the roughness of the surface of the resistance layer.

Furthermore, in some embodiments, a roughness of a surface structure of the barrier layer on its side facing away from the resistance layer can be less than a roughness of the surface structure of the resistance layer. In particular, the barrier layer can bring about a certain leveling out due to the imitation of the surface structure of the resistance layer, but without completely eliminating a roughness of the surface structure of the resistance layer. In this respect, the surface structure of the barrier layer can also have a roughness on its side facing away from the resistance layer, which is determined by the roughness of the surface structure of the resistance layer, but is reduced compared to the roughness of the surface structure of the resistance layer due to the covering of the resistance layer.

In some embodiments, the surface structure of the resistive layer can form recesses, wherein the barrier layer can cover the recesses continuously and with a uniform thickness. Such a recess can in particular cover a shadowed section of the surface of the resistive layer with respect to the surface normal of the shadowed section, so that the surface normal of the shadowed section intersects the recess. Since the barrier layer can also cover the recesses with a constant thickness, ie the constant thickness, even such a recess does not lead to a gap in the barrier layer. Rather, the barrier layer can be designed to be continuous and “pinhole-free” or gapless. In particular, recesses can be covered by applying the barrier layer using atomic layer deposition formation method can be achieved, whereas directional methods conventionally used to form barrier layers, for example sputtering methods, can lead to gaps in the barrier layer at such recesses due to shadowing effects.

In some embodiments, the surface structure of the resistance layer can form open cavities with wall sections as an alternative or in addition to the recesses described above, with the wall sections of a respective cavity lying opposite one another with respect to the respective cavity. In particular, the surface normals of the wall sections of the respective cavity can cross one another at an acute angle. In such embodiments, the barrier layer can cover the opposing wall sections of the respective cavity. Such an open cavity can, in contrast to a mere depression of the surface of the resistance layer with a concave structure, also form a recess, so that a normal of the surface of the resistance layer at a lowest point of such a cavity, in particular a wall section of the cavity or the recess can cut. The deepest point of the cavity can be covered by the wall section or the recess along this normal. The opening of such a cavity can, for example, be oriented upwards, ie away from the carrier, obliquely upwards or to the side.

Since the barrier layer can cover the wall sections of such cavities, such cavities can also be conformally covered and/or lined by the barrier layer. The barrier layer can thus not only close the opening of the cavity, so that a cavity is formed between the resistance layer and the barrier layer, but the wall sections of the cavity can also be covered by the barrier layer. Accordingly, a surface of the barrier layer facing away from the resistance layer can also have a cavity with an opening at the relevant point, with this cavity on the surface of the barrier layer in particular also being able to have a recess. If necessary, however, the barrier layer can completely fill cavities or depressions in the surface structure of the resistance layer whose depth is less than the thickness of the barrier layer and/or whose wall sections have a smaller distance from one another than twice the thickness of the barrier layer.

Furthermore, in some embodiments, the resistive layer may extend along a plane of extension, wherein at least one of the wall sections of a respective Cavity of the resistive layer can take an angle of> 90 degrees with respect to the plane of extension of the resistive layer.

At least one of the wall sections of the respective cavity can thus form a recess with respect to the plane of extension, so that a surface normal of the at least one wall section can intersect the plane of extension of the resistance layer. In particular, the surface normal of the at least one wall section can intersect the extension plane of the resistance layer along a direction pointing away from the wall section. Accordingly, the wall section can cover a lower point and in particular a lowest point of the cavity in relation to a surface normal of the extension plane of the resistance layer. However, such wall sections of a cavity that overhang the extension plane to a certain extent can also be covered by the barrier layer with a uniform thickness corresponding to the other sections of the surface of the resistance layer, so that no cavity is created between the wall section and the barrier layer that could impair the protection of the resistance layer.

In some embodiments, a surface of the carrier facing the resistance layer can form at least one recess, it being possible for the resistance layer to have a gap in the region of the recess. Further, the barrier layer can cover the recess of the substrate and the resistance layer present in the vicinity of the gap continuously and with a uniform thickness. In particular, in such embodiments, the electrical resistance component can be in the form of a thin-film resistance component.

In particular, when applying the resistive layer by a directional method, a recess of the surface of the substrate may overshadow a portion of the surface of the substrate with respect to a direction along which the material for forming the resistive layer is applied to the substrate, so that the material covers the shadowed portion the surface of the carrier and the recess is not reached. In these areas, a gap or a "pinhole" in the resistance layer can therefore form on the surface of the carrier. The continuous barrier layer, on the other hand, can also cover such gaps in the resistive layer and, in the region of the gaps, the recess of the surface of the support and/or the shadowed section with the constant thickness. The continuous barrier layer can therefore be formed “pinhole-free” or without gaps, even if the resistance layer has gaps. In particular, the carrier can also form a cavity with opposite wall sections whose surface normal cross each other at an acute angle, wherein the resistive layer may have a gap covered by the barrier layer of constant thickness at least at one of the wall portions.

In some embodiments, the barrier layer may have a maximum thickness of 1000 nanometers (nm). Alternatively or additionally, in some embodiments, the barrier layer may have a thickness of at least 5 nanometers (nm). In particular, the thickness of the barrier layer can be in a range between 20 nanometers (nm) and 500 nanometers (nm) or in a range between 100 nanometers (nm) and 500 nanometers (nm).

Such a thin barrier layer can in particular also enable the electrical resistance component to be designed to be thin overall. A barrier layer with a thickness of just 100 nm can enable the resistance layer to be completely hermetically sealed, in particular when the barrier layer is applied using an atomic layer deposition process, in order to be able to protect it from ingress of moisture and in particular from the influence of water vapor. A further thickening to around 500 nm can further secure the hermetic seal and individual steps during the attachment of the barrier layer can be accelerated, for example by not having to ensure that a complete layer without any defects is produced in every process step in an atomic layer deposition process becomes.

In some embodiments, the barrier layer can comprise a plurality of atomic layers running parallel one above the other, which simulate the surface structure of the resistance layer. In particular, the barrier layer can comprise a plurality of continuous atomic or approximately continuous atomic layers which lie on top of one another. For example, each of the atomic layers can replicate the surface structure of the resistance layer with a uniform thickness, with individual atomic layers possibly having minor imperfections, but such imperfections being able to be compensated for by the subsequent atomic layers. In particular, the respective atomic layers can also have the features explained above for the barrier layer and, for example, cover a wall section of a cavity, a recess formed by the surface structure of the resistive layer, a recess formed by the surface of the carrier and/or a gap in the resistive layer with a constant thickness . The multiple atomic layers of the barrier layer can be made of the same material rial, or different atomic layers can be made of different materials from each other.

In embodiments with different materials, the barrier layer can have an arrangement of several (e.g. at least ten) atomic layers of a first material A one on top of the other, and over such an arrangement the barrier layer can have at least one further arrangement of several (e.g. at least ten) atomic layers of a different from second material B differing from the first material A one on top of the other. Optionally, the barrier layer over the further arrangement can also have at least one arrangement of several (e.g. at least ten) atomic layers of a third material C on top of one another. Furthermore, in some embodiments, a repetition of such layer arrangements can be provided, so that the barrier layer can have a sequence of several different layer arrangements according to the ABAB... scheme or according to the ABCABC... scheme one on top of the other.

In some embodiments, the barrier layer may have an amorphous structure. While crystalline barrier layers may have grain boundaries due to lattice defects where regions of the crystal of different orientation abut, an amorphous structure of the barrier layer can allow for a uniform and hermetic coverage of the resistive layer. The barrier layer can thus be formed without cracks or interruptions, in particular also in individual atomic layers, which could impair the permissible sealing of the resistance layer against environmental influences and in particular moisture. For example, such an amorphous structure of the barrier layer can be achieved by atomic layer deposition.

Alternatively or additionally, the barrier layer can have a partially crystalline structure in some embodiments. A partially crystalline structure can be formed in particular by a number of small crystals which are connected to one another at the respective grain boundaries. With such a structure, crystallizations can take place in particular in sections, but no continuous crystalline structure is formed. For example, semi-crystalline structures can arise in the course of an atomic layer deposition for applying the barrier layer, in that the respective reactions for forming a layer take place with a slight time delay, so that crystals can form in sections, but not continuously, which then collide at grain boundaries to form the respective layer to build. In some embodiments, the barrier layer can, as already mentioned, be formed in multiple layers. In particular, in the case of an atomic layer deposition, individual layers can be applied in a number of process steps and/or cycles, which can ultimately together form the barrier layer. The layers can in particular be the already mentioned several atomic layers running parallel one above the other.

In some embodiments, the barrier layer can have at least one layer with an amorphous structure. Alternatively or additionally, in some embodiments the barrier layer can have at least one layer with a partially crystalline structure. In particular, in some embodiments the barrier layer can have at least one layer with an amorphous structure and at least one layer with a partially crystalline structure.

Furthermore, in some embodiments, the barrier layer can have a first layer formed from a first material and a second layer formed from a second material, wherein the first material and the second material can differ from one another. If the barrier layer, as already explained, has multiple arrangements of multiple layers of different materials, in an atomic layer deposition method, multiple atomic layers of the same material can first be deposited in multiple process cycles in order to form a first layer arrangement. After a predetermined number of atomic layers, an atomic layer of a different material can be deposited, for example by changing the previously used reactants. A plurality of atomic layers of this other material can also subsequently be deposited in order to jointly form a second layer arrangement of the barrier layer. Optionally, a repeating sequence of several different layer arrangements can be formed in this way, and/or more than two different materials can be provided for the different layer arrangements.

For example, provision can be made for a first layer of the barrier layer to be formed, in particular by means of atomic layer deposition, from a material which covers the resistance layer as an amorphous structure. A following layer can then be provided, for example, for which a material is used which forms a partially crystalline structure. In principle, the barrier layer can be formed from any combination of layers with an amorphous structure and layers with a partially crystalline structure. However, it can also be provided that all of the multiple layers of the barrier layer have an amorphous structure or a partially crystalline structure and/or are made of the same material are formed. However, the use of different materials and/or layers of different structures may further increase the moisture impermeability of the barrier layer.

In some embodiments, the barrier layer can be electrically insulating or semiconductive. In particular, no current can flow between the barrier layer and the electrical connection during the intended use of the electrical component.

In particular, in some embodiments the electrically resistive component can comprise two electrical connections which are attached to the carrier and which are connected to one another by the resistive layer.

Furthermore, in some embodiments, the barrier layer can be hermetically sealed. The barrier layer can thus enable reliable protection of the resistance layer against moisture in liquid form and/or in vapor form.

The barrier layer may be formed by atomic layer deposition onto the resistive layer in some embodiments.

As discussed above, attaching the barrier layer by atomic layer deposition can allow the barrier layer to be thinly deposited on the substrate and to cover the surface of the resistive layer with a uniform thickness, so that a conformal barrier layer can be formed with an inorganic material. The application of the barrier layer by atomic layer deposition can thus in particular make it possible to precisely reproduce the surface structure of the resistance layer. In addition, atomic layer deposition can be carried out in a large process window or in a large temperature range, so that the barrier layer can be applied gently to the resistive layer and damage to the resistive layer or a change in its electrical characteristics through the application of the barrier layer can be avoided. The resistive layer can thus be covered with a thin, inorganic barrier layer by atomic layer deposition, whereby both a high level of protection of the resistive layer against environmental influences and in particular against damage due to corrosion due to the ingress of moisture can be achieved and it can be ensured that the previously defined electrical properties of the Electrical resistance component, such as a precisely trimmed resistor, are not changed or affected by the attachment of the barrier layer. Thus made possible such a barrier layer to achieve the required accuracy of electrical resistance components and to ensure their long-term stability against environmental influences and under load.

The barrier layer may include a metal oxide, a semiconductor oxide, a metal nitride, a semiconductor nitride, a metal oxynitride, and/or a semiconductor oxynitride in some embodiments. In particular, in such embodiments, the barrier layer may comprise alumina (Al2O3), titanium oxide (TiC>2), titanium nitride ( _TiNx ), hafnia (HfC>2), zirconia (ZrC>2), and/or tungsten oxide (WO).

Such materials are particularly suitable for being applied to the resistive layer by means of atomic layer deposition, for which purpose, in particular, relatively large process windows and/or temperature ranges are available. For example, an aluminum oxide layer can be applied to the resistive layer in a temperature range of approximately 20° C. to 400° C. by means of atomic layer deposition.

As already explained, the barrier layer can, in particular, comprise a plurality of layers of different materials, with the above-mentioned materials or groups of materials being particularly suitable for the respective layers.

In some embodiments, the barrier layer may be at least partially covered by a protective layer. Such a protective layer can enable additional protection of the resistance layer against environmental influences, in that the barrier layer can already be shielded against the influence of moisture by the protective layer. However, the protective layer does not necessarily have to cover the barrier layer in a conformal manner, due to the already conformal covering of the resistance layer by the barrier layer. Rather, for example, minor cavities between a surface of the barrier layer on a side facing away from the resistance layer and the protective layer can be tolerable, since the resistance layer can already be reliably protected by the barrier layer and in particular against liquid possibly entering and/or collecting in these cavities. The protective layer can thus extend the protection of the resistance layer against environmental influences, but it can optionally develop a lower protective effect than the barrier layer and can therefore be applied in a simple manner.

The protective layer may comprise an organic material in some embodiments. In particular, in some embodiments, the protective layer can be made of an organic be formed see material and / or consist of an organic material. Furthermore, in some embodiments, the protective layer may alternatively or additionally comprise an inorganic material. A combination of organic and inorganic materials can also be provided to form the protective layer.

A protective layer, in particular organic, can form an advantageous addition to an inorganic barrier layer, in that the organic protective layer can already provide reliable protection for the resistance layer against moisture in liquid form, for example due to condensation, while the conforming, inorganic barrier layer protects the resistance layer in particular against moisture can complete in vapor form. The protective layer as an organic layer can also be made thin, so that the barrier layer and the protective layer can together form a thin covering of the resistance layer in order to protect it completely against the influence of moisture.

In addition to the double protective effect, such a protective layer and in particular an organic protective layer can also be used as an etching mask during production of the electrical resistance component in order to be able to wet-chemically remove the previously applied barrier layer, for example in an area of the electrical connection. This makes it possible to dispense with any additional structuring steps in order, for example, to be able to remove again in specific areas a barrier layer applied by atomic layer deposition, which can cover the entire surface of the part of the electrical resistance component exposed to the method of atomic layer deposition. Rather, this can be done in a convenient and simple manner by a subsequent etching step using the protective layer as an etching mask.

For example, in some embodiments, the protective layer may include an epoxy resin, a polyimide, a polyamide, a polyimideamide, a silicone resin, an acrylate, a polyurethane, and/or silicon dioxide (SiO2).

The resistive layer may have a trimming structure in some embodiments. For example, a resistance value of the resistance layer can be precisely defined by such a trimming structure.

The trimming structure can in particular form incisions and/or constrictions of the resistance layer along an extension plane of the resistance layer. The trimming structure can damage the surface of the resistance layer through such incisions or constrictions interrupt in particular, so that the trimming structure can not be part of the surface structure along the surface of the resistive layer, but can form a contrast larger structure. The incisions and/or constrictions can in particular extend from the surface of the resistance layer to a surface of the carrier and completely sever the resistance layer. For example, a trimming structure can be formed lithographically or by laser structuring after the resistive layer has been applied to the substrate.

The resistive layer may include chromium, nickel, or a cermet in some embodiments. Furthermore, the resistance layer can include, for example, silicon, tantalum, molybdenum, niobium, aluminum, copper, titanium, carbon and/or tantalum nitride. In particular, the resistance layer can be embodied as a thin-film resistor, with thin-film resistors in particular being susceptible to corrosion due to the small layer thickness and therefore requiring reliable protection against moisture. As an alternative to this, the resistance layer can be in the form of a thick-film resistor, for example, it being possible for such a thick-film resistor to include a cermet. Cermet thick-film resistors can also be undesirably affected by corrosion, so that a reliable seal against moisture is equally necessary for such thick-film resistors.

In some embodiments, the resistive layer may be planar. In particular, the carrier can be cuboid in such embodiments, it being possible for the resistance layer to be formed on a surface of the carrier.

As an alternative to this, in some embodiments the resistance layer can be in the form of a hollow cylinder. In such embodiments, the carrier can in particular be of cylindrical design, in which case the resistance layer can surround the carrier circumferentially. In addition, in such embodiments, the electrical connection can be designed as a cap that covers an end face of the carrier, and/or two opposite electrical connections can be designed on the carrier, which are designed as a respective cap on an end face of the cylindrical carrier are.

Furthermore, in some embodiments, the resistive layer can be designed in a meandering or spiral shape. In principle, the shape of the resistance layer can be determined by the shape of the carrier, which can depend in particular on the intended use of the resistance component. In some embodiments, the carrier can comprise a ceramic substrate and in particular comprise aluminum oxide (Al2O3), aluminum nitride (AlN) and/or silicon dioxide (SiO2). In particular, the carrier can be made and/or consist of a ceramic substrate.

The invention also relates to a method for producing an electrical resistance component and in particular an electrical resistance component, in particular an electrical resistance component according to one of the embodiments explained above, with the steps:

providing an electrically insulating carrier,

Attaching at least one electrical connection to the carrier, attaching at least one resistance layer to the carrier, the resistance layer having a surface structure along its surface on a side facing away from the carrier, and

Covering the resistive layer with a barrier layer which comprises an inorganic material and reproduces the surface structure of the resistive layer continuously and with a uniform thickness.

For example, the resistive layer can be applied to the carrier after or before the at least one connection element, and the resistive layer can be applied in such a way that it contacts the connection element. Furthermore, two respective electrical connections can be attached to the carrier on opposite sides. In particular, an electrical connection can be applied additively to the carrier by screen printing and subsequent firing of conductive metal pastes. The resistive layer can be designed as a thin-film resistor, for example, and attached to the carrier by a physical vapor deposition process and/or form a thin metal layer, which can comprise nickel, chromium or cermet, for example. As an alternative to this, the resistance layer can be in the form of a thick-film resistor and, in particular, applied as a paste, in particular a glass paste with metal particles or with metal oxide particles, to the carrier by means of screen printing.

Furthermore, it can be provided that the resistive layer has an electrically conductive layer applied to the carrier, which before covering the resistive layer with the barrier layer can be covered with an additional, but non-conformal and/or non-continuous, additional material layer in order to protect the electrically conductive layer of the to stabilize the resistive layer. Such an additional material layer of resistance The static layer can be applied to the conductive layer in particular by sputtering, with the conductive layer and the additional material layer together forming the resistive layer in such embodiments, which can then be evenly covered with the barrier layer. In principle, however, the resistance layer can also be formed exclusively by a current-conducting layer.

As already explained above, by the exact reproduction of the surface structure of the resistive layer, which can be determined, for example, due to irregularities during a physical gas deposition process for applying the resistive layer or a roughness of the surface of the carrier or a roughness arising when the resistive layer is applied by screen printing, a reliable sealing of the resistance layer can be achieved by the barrier layer against incoming moisture. Since the barrier layer also includes an inorganic material, reliable protection can be achieved, in particular against moisture in vapor form.

The barrier layer may be deposited on the resistive layer by atomic layer deposition in some embodiments. In particular, this allows the barrier layer to be applied in a relatively large process window or in a relatively large temperature range. In the course of the atomic layer deposition process, the barrier layer can be applied successively to the resistive layer, in particular by a plurality of parallel atomic layers, in order to cover the surface structure of the resistive layer with a uniform thickness, which can be determined essentially by the number of atomic layers or the number of cycles of the atomic layer deposition process carried out in succession , to replicate. In this way, a hermetic seal of the resistance layer and in particular all areas of the resistance layer can be achieved, with cavities formed by the surface structure, recesses formed by the surface structure of the resistance layer, recesses formed by the surface of the carrier and/or gaps in the resistance layer being uniformly separated from the barrier layer, for example can be covered or lined.

In some embodiments, the resistive layer may be covered with multiple layers, which together form the barrier layer. As already explained above, this can be done in particular by atomic layer deposition, in that in successive cycles of the atomic layer deposition, respective atomic layers are produced which cover the previously produced layers. Further, in some embodiments, a first layer of the plurality of layers may be formed from a first material and a second layer of the plurality of layers may be formed from a second material, where the first material and the second material may differ from one another. In particular, the barrier layer can be formed as a laminate of layers of different materials, in which case, in particular, the materials already mentioned above can be considered for the individual layers.

Alternatively or additionally, in some embodiments at least one layer of the multiple layers may have an amorphous structure and/or at least one layer of the multiple layers may have a semi-crystalline structure. In particular, the barrier layer can have both layers with a partially crystalline structure and layers with an amorphous structure in order to be able to achieve the most impermeable possible sealing of the resistance layer. For example, such amorphous and/or partially crystalline layers can be formed by choosing suitable materials in an atomic layer deposition process to produce the respective layer.

In some embodiments, the barrier layer may have a maximum thickness of 1000 nanometers (nm). Alternatively or additionally, the barrier layer can have a thickness of at least 5 nanometers (nm). In particular, a barrier layer that was applied to the resistance layer by atomic layer deposition can already form a reliable seal for the resistance layer with such a thickness, wherein the barrier layer can already be completely hermetically sealed with a thickness of 10 nm, 20 nm or 100 nm. The barrier layer can therefore in particular have a thickness of approximately 10 nm, approximately 20 nm, approximately 50 nm or approximately 100 nm.

In some embodiments, a protective layer can be applied to the barrier layer. Such a protective layer can complete the protection of the resistance layer against environmental influences and in particular moisture, which is already provided by the barrier layer, in order, for example, to keep moisture in liquid form away from the barrier layer.

The protective layer may comprise an organic material in some embodiments. In particular, this can prevent passage of moisture in liquid form, whereas the barrier layer comprising an inorganic material can prevent passage of moisture in vapor form to the resistance layer. Through the interaction of the protective layer and the barrier layer, the resistance layer can thus be completely protected against the effects of moisture. Furthermore, the Protective layer in some embodiments comprise an inorganic material and / or a combination of organic and inorganic materials.

In some embodiments, the protective layer can be applied to the barrier layer in a structured manner by means of screen printing.

Furthermore, in some embodiments, the barrier layer in the area of the connection element can be removed by wet-chemical means, in which case the protective layer can be used as an etching mask. Since the protective layer can be applied to the barrier layer in a structured manner, the protective layer can be applied to the barrier layer in such a way that the sections of the barrier layer required to protect the resistance layer are covered by the protective layer and can thus be retained during etching. On the other hand, sections of the barrier layer which cover the at least one electrical connection can easily be removed wet-chemically by using the protective layer as an etching mask, without further and complex structuring steps of the barrier layer being necessary.

In particular, the barrier layer can cover the resistance layer beyond respective edges of the surface of the resistance layer, so that the resistance layer can be surrounded by the carrier on a side facing the carrier and by the barrier layer on all other sections. The resistance layer can thus be completely surrounded and hermetically sealed, in particular also after wet-chemical removal of the barrier layer in the area of the electrical connection.

Furthermore, in some embodiments, the resistive layer may be provided with a trimming structure before applying the barrier layer. In particular, this can be done lithographically and/or by laser structuring. Such a trimming structure can make it possible, for example, to precisely define an electrical resistance of the resistance layer, with the trimming structure being able to form incisions and/or constrictions in the resistance layer, for example.

The steps mentioned for producing an electrical resistance component can be carried out in particular at a wafer level by carrying out the steps for a plurality of electrical resistance components connected to one another together and then separating the electrical resistance components, in particular sawing them up. Furthermore, the invention is also directed to an electrical resistance component which is produced by a method according to the explained embodiments. In particular, the invention also relates to an electrical resistance component which is produced using the method according to the explained embodiments.

The invention is explained below purely by way of example using embodiments with reference to the drawings.

Show it:

1A to 1F show a respective schematic representation of an electrical resistance component, which is designed as an electrical resistance component, in various steps of a method for producing the electrical resistance component,

2A and 2B each show a schematic detailed view of a section of an electrical resistance component which is designed as a thick-film resistance component and has a resistance layer with a surface structure along its surface, which is covered by a barrier layer which simulates the surface structure with a uniform thickness, wherein in Fig. 2B additionally shows a protective layer covering the barrier layer,

3A to 3C a respective further schematic detailed view of a section of the electrical resistance component to illustrate the formation of the barrier layer with several atomic layers, a trimming structure formed on the resistance layer, a cavity of the surface of the resistance layer replicated by the barrier layer and a resistance layer which comprises a current-conducting layer and an additional layer of material,

4A to 4D each show a schematic detailed view of a section of an electrical resistance component corresponding to FIGS. 2A and 2B, the resistance component however being in the form of a thin-film resistance component, as well as a schematic detailed view for illustrating a trimming structure formed on the resistance layer and a schematic detailed view to the Illustration of a gap in the resistive layer caused by a shadowing effect and

5A and 5B show a perspective view and a cross-sectional view of an embodiment of the electrical resistance component which has a cylindrical carrier.

1A to 1F schematically illustrate a method for producing an electrical resistance component 11, the complete electrical resistance component 11 being shown schematically in a cross-sectional view in FIG. 1F.

In a first step 101 shown in FIG. 1A in this method, an electrically insulating carrier 13 is provided, which is embodied here by way of example as a cuboid. The carrier 13 can in particular comprise a ceramic substrate and can be formed and/or consist of aluminum oxide (Al2O3), for example.

In a subsequent step 103 shown in FIG. 1B, two electrical connections 17 are attached to the carrier 13, it being possible for the connections 17 to be attached, for example, by screen printing and subsequent firing of conductive metal pastes. The two electrical connections 17 can in particular form respective electrical contacts via which the electrical resistance component 11 can be electrically connected to other components.

In a step 105, a resistance layer 15 is then applied to the carrier 13, the resistance layer 15 connecting the two electrical connections 17 to one another. For example, the resistive layer 15 can be attached to the carrier 13 by physical vapor deposition and form a thin metal layer, wherein a sputtering method can be used to attach the resistive layer 15, in which a directed material application takes place. In particular, by applying the resistive layer 15 in this way, the resistive component 11 can be formed as a thin-film resistive component (also referred to as a thin-film resistive component), wherein the resistive layer 15 can have a thickness in the range from 50 nanometers to 500 nanometers (cf. also Fig. 4A to 4D). As an alternative to this, the resistance component 11 can also be embodied as a thick-film resistance component, with the resistance layer 15 of such a resistance component 11 being formed, for example, from a glass paste comprising metal particles or metal oxide particles and applied to the carrier 13 by means of screen printing (cf. also Fig. 2A to 3C). A resistance layer 15 applied to the carrier 13 in this way can have a thickness of up to 10 μm, for example. Furthermore, it is also possible to first attach the resistance layer 15 and then the electrical connections 17 to the carrier 13 .

For example, the resistance layer 15 can be formed by a thin metal layer, which can comprise nickel or chromium, for example, and can be attached to the carrier 13 in particular by means of physical vapor deposition. As an alternative to this, a resistance layer can be formed, for example, from a cermet thick layer. In particular, however, formation from nickel or chromium makes it possible to apply the resistance layer 15 as a thin-film resistor on the carrier 13, so that a flat configuration of the electrical resistance component 11 or the resistance component can be achieved.

In order to be able to set a certain electrical resistance on the resistance layer 15, the resistance layer 15 can be provided with a trimming structure 47 in a step not illustrated in FIGS. 1A to 1F, for example by making incisions and/or constrictions in the Resistance layer 15 are attached. Such cuts or constrictions may interrupt portions of the resistive layer 15 in a plan view, and may extend through the resistive layer 15 to the substrate 13 in a side view (see also Figures 3B and 4C). Provision can therefore be made, for example, for the resistance layer 15 to be provided with a trimming structure 47 between the steps illustrated in FIGS. 1C and 1D.

Irrespective of the trimming structure 47 explained above, through which interruptions in the resistance layer 15 extending as far as the carrier 13 can be deliberately formed, the resistance layer 15 has a surface 19 on a side 25 facing away from the carrier 13 with a surface structure 21 which, for example a roughness of the surface 19 of the resistive layer 15 can be determined (cf. FIGS. 2A to 4D). In contrast to the deliberately applied trimming structure 47, the surface structure 21 can primarily be caused by the process for applying the resistive layer 15 to the carrier 13, for example by different structures or heights of the resistive layer 15 during a sputtering process and/or screen printing process can form on the carrier 13, which can be reflected in a microscopic, not specifically produced surface structure 21 with a roughness in the range of about 0.1 μm to 3 μm. Furthermore, particularly when the resistance component 11 is configured as a thin-film resistance component, the thickness of the resistance layer 15 can be less than the roughness of a surface 71 of the carrier 13 on which the resistance layer 15 is applied (cf. FIGS. 4A to 4D). In the case of such an electrical resistance component 11 , the surface structure can therefore be essentially determined by the roughness of the surface 71 of the carrier 13 . For example, the roughness of the surface 71 of the carrier 13 can be in a range from 1 μm to 3 μm, while the thickness of the resistive layer 15 of a resistive component 11 designed as a thin-film resistive component can be in a range from 50 nanometers to 500 nanometers. In contrast, in the case of a resistance component 11 designed as a thick-film resistance component, the thickness of the resistance layer can be up to 10 μm and thus exceed the roughness of the surface 71 of the carrier, so that the surface structure 21 of the resistance layer 15 in such a case is affected by the roughness of the resistance layer 15 itself can be determined (see Figs. 2A to 3C). Such a roughness can be in the aforementioned range of approximately 0.1 μm to 3 μm and thus essentially correspond to the roughness of the surface 71 of the carrier 13 .

In the case of electrical resistance components 11, there is a fundamental requirement to design these electrical resistance components 11 as small and in particular as flat or thin, but at the same time to ensure high accuracy and stability over a long period of time and under load. For example, it may be necessary for a resistance set on a resistance layer 15 designed as a resistance layer to experience a change of at most 0.1% over a long period of use, for example 1000 hours at 10% nominal load. In addition, a high degree of accuracy of the set resistance value is required, with a tolerance for example between 1% and 0.01% being required. However, the required thin resistance layers 15 often have a high sensitivity to corrosion by anodic oxidation due to the small layer thickness when electrical voltage is applied at the same time, so that the long-term stability of such an electrical resistance component 11 can be impaired by contact with moisture.

Therefore, in a step 107 shown in FIG. 1D, the resistive layer 15 is covered with a barrier layer 23, which comprises an inorganic material and replicates the surface structure 21 of the covered resistive layer 15 with a uniform thickness D (cf. also FIGS. 2A to 4D). In particular, the barrier layer 23 can be applied to the resistive layer 15 by atomic layer deposition in order to structure 21 to be able to replicate exactly on the side 25 facing away from the carrier 13 . In particular, such an atomic layer deposition can make it possible to form the barrier layer 23 as a conformal layer with a uniform thickness D in order to reproduce the surface structure 21 of the resistance layer 15 exactly. In addition, atomic layer deposition can take place in a relatively wide process window or in a wide temperature range, so that the barrier layer 23 can be gently applied to the resistance layer 15 and it can be ensured that, for example, a resistance set on the resistance layer 15 is not changed by the attachment of the barrier layer 23 become.

In particular, by the barrier layer 23 comprising an inorganic material, the barrier layer 23 can provide a reliable protection of the resistive layer 15 against moisture in vapor form, wherein the barrier layer 23 can hermetically seal the resistive layer 15 . For this purpose, various materials are suitable for the barrier layer 23 and the barrier layer 23 can comprise, for example, a metal oxide, a semiconductor oxide, a metal nitride, a semiconductor nitride, a metal oxynitride and/or a semiconductor oxynitride. In particular, the barrier layer 15 can comprise aluminum oxide (AI2O3 or AhO3:N), titanium oxide (TiÜ2), titanium nitride (TiN _x ), hafnium dioxide (HfÜ2), zirconium dioxide (ZrC) and/or tungsten oxide (WO), which are applied to the resistance layer, for example by atomic layer deposition can become. If the barrier layer 23 is formed using the above-mentioned materials, the barrier layer 23 can also be designed to be electrically insulating or semiconducting, in particular, so that a current can flow through the electrical resistance component 11 or between the two terminals 17 completely through the resistance layer 15 and, for example, a predetermined one Resistance value of the electrical resistance component 11 can be specified precisely.

Furthermore, the barrier layer 23 can have an amorphous structure, which, for example, can likewise arise directly as a result of the barrier layer 23 being applied by means of atomic layer deposition. Such an amorphous structure can be formed uniformly in comparison to crystalline structures and in particular have no grain boundaries at which differently oriented sections of a crystal adjoin one another. While such grain boundaries can form undesirable fractures in a crystalline structure and impair the sealing of the resistive layer 15, an amorphous and inorganic barrier layer 23 can provide a reliable seal, particularly against moisture in vapor form. Alternatively or additionally, however, the barrier layer 23 can also have a partially crystalline structure. 2A to 4D show schematic detailed views in order to illustrate the imitation of the surface structure 19 of the resistance layer 15 by the barrier layer 23. FIG. An electrical resistance component 11 is illustrated in FIGS. 2A to 3C, which is designed as a thick-film resistance component in which a thickness of the resistance layer 15 exceeds a roughness of the surface 71 of the carrier 13 . 4A to 4D, on the other hand, schematically illustrate an electrical resistance component 11, which is designed as a thin-film resistance component and in which the roughness of the surface 71 of the carrier 13 is greater than the thickness of the resistance layer 15. Due to the merely schematic representation, However, no exact size or length relationships can be found in FIGS. 2A to 4D. In particular, the ratios between a thickness of the resistance layer 15 and its roughness or a ratio between the thickness D of the barrier layer 23 and the thickness of the resistance layer 15 do not always have to correspond exactly to the respective illustration in FIGS. 2A to 4D.

As shown in Figs. 2A and 4A, for example, the three-dimensional course of a surface structure 55 of the barrier layer 23 on a side 29 of the barrier layer 23, which faces away from the resistance layer 15, precisely follows the surface structure 21 of the barrier layer 23 due to the formation of the barrier layer 23 with a uniform thickness D Resistive layer 15 along its surface 19 on the side 25 which faces away from the carrier 13. Basically, the surface structure 55 of the barrier layer 23 corresponds to the surface structure 21 of the resistance layer 15, but for example a width B1 of a depression 53 or a distance between two sections 67 on the surface 19 of the resistance layer 15 at the corresponding depression 53 in the surface structure 55 of the barrier layer 23 can be reduced by twice the thickness D of the barrier layer 23 . A width B2 or a distance between two sections 69 on the surface 55 of the barrier layer 23, which are formed at the same height as the sections 67 on the surface 19 of the resistance layer 15, can thus reduce the width B1 by twice the thickness D of the barrier layer 23 match.

Since the barrier layer 23 simulates the surface structure 21 of the surface 19 of the resistance layer 15, the surface structure 55 of the barrier layer 23 follows the course of the surface structure 21 of the surface 19 of the resistance layer 15, so to speak, at a distance which corresponds to the thickness D of the barrier layer 23. On the other hand, a structure of the barrier layer 23 on a side 27 facing the resistance layer 15 corresponds precisely to the surface structure 21 of the surface 19 of the resistance layer 15 in that the barrier layer 23 on the side 27 is directly adjacent to the resistance layer 15 connects and rests against the resistance layer 15 or its surface 19 . The surface 19 of the resistance layer 15 can therefore be contacted by the barrier layer 23 in particular at any point.

Furthermore, FIG. 2A shows that the surface structure 21 of the surface 19 of the resistance layer 15 can form an open cavity 31 which is delimited in the cross section shown by two wall sections 33 and 35 lying opposite one another. The cavity 31 also has an opening 39 which is directed upwards, ie points away from the carrier 13 . In contrast to depressions 53 also formed on the surface structure 21, the cavity 31 is delimited by a recess 37 of the resistance layer 15 formed by the wall section 35, which to a certain extent overhangs an extension plane E of the resistance layer 15 (cf. also Fig. 3C).

Despite this recess 37 of the resistance layer 15, the barrier layer 23 covers the two wall sections 33 and 35 of the cavity 31 of the surface structure 21 and thus also the recess 37 with the uniform thickness D and completely lines the cavity 31 (cf. also Fig. 3C). The surface of the cavity 31 of the resistance layer 15, including the recess 37, is evenly covered by the barrier layer 23, so that the surface structure 55 of the barrier layer 23 on the side 29 facing away from the resistance layer 15 also has a cavity in the region of the cavity 31 with an opening. In this respect, the barrier layer 23 in particular does not close the opening 39 of the cavity 31 of the surface structure 21 of the surface 19 of the resistance layer 15 and there is no cavity between the resistance layer 15 and the barrier layer 23, which would prevent the resistance layer 15 from being sealed by the barrier layer 23 or the stability of this could affect sealing.

In the embodiment of a thick film resistive component illustrated in Figures 2A to 30, the wall sections 33 and 35 and the cavity 31 of the resistive layer 15 are formed by the resistive layer 15 itself. In contrast, in the embodiment of a thin-film resistance component illustrated with reference to FIGS. 4A to 4D, the surface 71 of the carrier 15 has two recesses 38, and the resistance layer 15 has a respective gap 49 or a "pinhole" in the region of the recesses 38 of the carrier 15 " on. In particular, such gaps 49 can arise as a result of a shadowing effect during the application of the resistive layer 15 to the carrier 13 if the resistive layer 15 is applied by a directional method, such as a sputtering method. As illustrated in the enlarged view of FIG. 4D, the material used to form the resistive layer 15, when oriented, can be used is applied along a direction S, does not reach the recess 38 of the surface 71 of the carrier 13 and a section 79 of the surface 71 of the carrier 13 that is overshadowed by the recess 38 with respect to the direction S, so that the gap 49 is formed in the resistance layer 15. Furthermore, in the case of a resistance component 15 designed as a thin-film resistance component, the resistance layer 15 can have an additional material layer (not shown in the figures) on its upper side in order to stabilize a current-conducting part of the resistance layer 15 . Such an additional layer can also be applied in particular by a directed method on the current-conducting layer of the resistance layer 15, so that the shading effects explained above can also occur with the additional material layer and the additional material layer cannot be formed continuously and "pinhole-free".

While the resistance layer 15 thus has gaps 49 in the region of the recesses 38 of the carrier 15, the barrier layer 23 also covers the recesses 38 of the carrier 13, the shadowed sections 79 and the resistance layer 15 present in the vicinity of the gap 49 with the uniform thickness D throughout (See Figures 4A, 4B and 4D). In particular, edges 77 of the gap 49 are thus also covered by the barrier layer 23 in a conformal manner, so that an influence on the resistance layer 15 at the edges 77 by moisture can be avoided (cf. FIG. 4D). Furthermore, the carrier 13 in turn forms respective cavities 31 in the region of the recesses 38, with a wall section 35 formed by the respective recess 38 having the gap 49 and not being covered by the resistance layer 15, while an opposite wall section 33 of the carrier 13 is covered by the resistive layer 15. However, the barrier layer 23 lines the cavities 31 completely conformally with the constant thickness D.

3C shows a further enlarged section of the resistance layer 15 for one embodiment of a thick-film resistance component, in which the surface structure 21 of the resistance layer 15 forms the cavity 31 along its surface 19 on the side 25 facing away from the carrier 13. As can be seen from FIG. 3C, the wall section 35, which forms the recess 37, occupies an angle of >90 degrees with the extension plane E, along which the resistance layer 15 extends. Therefore, a normal N1 of the surface structure 21 in the area of the wall section 35 intersects the extension plane E of the resistance layer 15 in the direction pointing away from the surface 19 of the resistance layer 25 . In addition, a normal N2 of the surface structure 21 intersects the wall section 35 or the wall section 35 at a lowest point 57 of the cavity 31 in the direction pointing away from the surface 19 of the resistance layer 15 Recess 37, which in this respect overhangs the extension plane E of the resistance layer 15. The cavity 31 is completely covered and lined by the barrier layer 23, so that the surface structure 55 of the barrier layer 23 also has a corresponding cavity. The same geometric relationships also exist in the case of the recesses 38 of the surface 71 of the carrier 13 and the cavities 31 illustrated with reference to FIGS. 4A, 4B and 4D, the recesses 38 in particular taking up an angle of >90 degrees with an extension plane of the carrier 13 and themselves in this case, the normals mentioned can relate to the surface 71 of the carrier 13 .

Furthermore, FIG. 2A again shows for the embodiment of a thick-film resistance component that the surface structure 21 can have a further cavity 51 which, however, is filled by the barrier layer 23 and whose opening is therefore closed by the barrier layer 23 . Such filled cavities 51 can arise during the covering of the resistance layer 15 with the barrier layer 23 if respective wall sections 59 of the cavity 51 have a smaller distance than twice the thickness D of the barrier layer 23 from one another. In this respect, the thickness of the barrier layer 23, measured from a lowest point of such a filled cavity 51, may correspond approximately to the depth of the cavity 51, so that the thickness of the barrier layer 23 at such a measuring point, despite the exact simulation of the surface structure 21 with a uniform thickness D of of this uniform thickness D can differ. However, as explained above, this is only due to the small distance between the two wall sections 59 of the cavity 51 and not due to an uneven simulation of the surface structure 21 of the surface 19 of the resistance layer 15, so that ultimately in the cavity 51 a conformal simulation of the Surface structure 21 takes place through the barrier layer 23. In principle, this can also be done with an electrical resistance component 11 embodied as a thin-film resistance component.

It is also apparent from FIG. 3A that the barrier layer 23 can comprise a plurality of parallel layers 41 lying one on top of the other, it being possible for each layer 41 to have a single atomic layer or an arrangement of a plurality of atomic layers. The layers 41 accordingly also simulate the surface structure 21 of the surface 19 of the resistance layer 15 and due to the parallel superposition of the layers 41, the thickness D of the barrier layer 23 can ultimately be primarily determined by the number of layers 41, in particular atomic layers. Such a multi-layer formation of the barrier layer 23 can also be provided in the case of the resistance component 11 illustrated with reference to FIGS. 4A to 4D (thin-film resistance component). As already explained, the barrier layer 23 comprises an inorganic material and can have an amorphous and/or a partially crystalline structure. It can also be provided that the layers 41 comprise different materials and the barrier layer 23 is designed as a laminate of different materials. Furthermore, it can be provided that some of the layers 41 form an amorphous structure, while others of the layers 41 form a partially crystalline structure. The barrier layer 23 can thus comprise a combination of amorphous and partially crystalline layers 41, it being possible for the respective structures to be produced in particular by selecting suitable materials and/or process conditions during a respective cycle of an atomic layer deposition method. In such a laminate of different materials, the individual layers 41 of a respective material can in particular comprise a plurality of atomic layers (eg ten atomic layers each or more).

In principle, such atomic layers 41 can have defects, not shown in FIG. Due to such imperfections, however, the thickness D of the barrier layer 23 can also vary slightly, in which case a ratio between a minimum thickness and a maximum thickness of the barrier layer 23 can be greater than 0.8 and in particular greater than 0.9. The thickness D of the barrier layer 23 can in particular be less than 500 nm and/or at least 100 nm, with a thickness D of the barrier layer 23 of 100 nm already enabling hermetic sealing of the resistance layer 15, while increasing the thickness D up to 500 nm, in particular the resistance of the barrier layer 23 and thus its reliability for shielding the resistance layer 15 against moisture can be increased.

In addition, it can be seen from FIGS. 2A to 4D that the roughness of the surface structure 55 of the barrier layer 23 can be in a range of 0.2 times to 1.0 times the roughness of the surface structure 21 of the resistance layer 15 and that the roughness of the Surface structure 55 of the barrier layer 23 can be less than the roughness of the surface structure 21 of the resistance layer 15, since the barrier layer 23 causes a certain leveling out. 3B illustrates again that the surface structure 21 of the resistance layer 15 is ultimately determined by its roughness and, in comparison to the trimming structure 47 in a resistance component 11 designed as a thick-film resistance component, a microscopic structure along the surface 19 of the resistance Standing layer 15 forms, which is separated by the incision shown in the trimming structure 47 into two sections 61 and 62. The trimming structure 47 does not correspond to the surface structure 21 of the resistance layer 15, but rather represents an overlay of this surface structure 21.

In the case of a thin-film resistance component, on the other hand, as shown in FIG. 4C, the thickness of the resistance layer 15 can be less than a roughness of the surface structure 21 of the resistance layer 15, so that the trimming structure 47 only forms a slight incision compared to the roughness of the surface structure 21 can.

After the barrier layer 23 has been applied and the resistive layer 15 has been covered with a uniform thickness D, a protective layer 43 can be applied to the barrier layer 23 in a step 109 (cf. FIG. 1D). This protective layer can in particular comprise an organic material and be applied to the barrier layer 23 in a structured manner by means of screen printing. However, the protective layer 43 does not necessarily have to completely reproduce the surface structure 55 of the barrier layer 23; However, such cavities can be largely avoided by careful application of the protective layer 43, as illustrated in FIGS. 2B and 4B.

Since the protective layer 43 can comprise an organic material, the protection of the resistance layer 15 against environmental influences can be perfected. In particular, the protective layer 43 can reliably allow moisture in liquid form, such as dew, to pass through, while the barrier layer 23 can seal off the resistance layer 15 from moisture in vapor form possibly penetrating through the organic protective layer 43 . Any damage to the resistance layer 15 and/or a change in its electrical properties, for example a resistance value, due to corrosion can thus be reliably prevented. However, the protective layer 43 can also comprise an inorganic material and combinations of organic and inorganic materials are also possible.

For example, the protective layer 43 can comprise an epoxy resin, a polyimide, a polyamide, a polyimidamide, a silicone resin, an acrylate and/or a polyurethane as the organic material. Furthermore, the protective layer 43 can comprise silicon dioxide (SiC>2), for example. In addition to the increased protective effect of the resistance layer 15, the protective layer 43, due to its structuring, can also be used in a step 109 as an etching mask 45 in order to wet-chemically remove the barrier layer 23 in a respective area 65 of the connections 17 (cf. Fig .1F). The barrier layer 23 applied in particular by atomic layer deposition can thus be removed from the connections 17 in a simple manner and in particular without the need for additional and complicated structuring steps in order to enable an electrical connection of the electrical resistance component 11 to further electrical components. Thus, the electrical resistance component 11 shown can be formed easily and inexpensively as a thin component 11, but at the same time high stability can be ensured over a long period of time due to the reliable protection of the resistance layer against environmental influences.

While the steps for producing the electrical resistance component 11 are shown in FIGS. 1A and 1F for a single electrical resistance component, it can also be provided in particular that the steps explained with reference to FIGS. 1A to 1F take place at a wafer level , wherein the respective electrical resistance components 11 can be singulated by subsequent sawing of the wafer.

The electrical resistance component 11 shown schematically in cross-section in FIG. 1F can in particular be cuboid, so that the resistance layer 15 can be fitted flat on a surface of the carrier 13 . In contrast, FIGS. 5A and 5B show a further embodiment in which the carrier 13 is designed as a cylinder and the resistance layer 15 is correspondingly designed as a hollow cylinder, with the resistance layer 15 surrounding the carrier 13 (see FIG. 5B). Equally, the protective layer 43 can also surround the barrier layer 23 in the form of a hollow cylinder in such embodiments. As FIG. 5A shows, the connections 17 of such a cylindrical electrical resistance component 11 can be designed in particular as caps on the carrier 13, the resistance layer 15 being able to be completely hermetically sealed to the outside by the barrier layer 23 and the protective layer 43.

As an alternative to the embodiment of FIG. 5A, in which the carrier 13 and the connections 17 have a reduced radius compared to the barrier layer 23 and the protective layer 43, it can also be provided that the connections 17 are formed with the same radius as the protective layer 43 are and completely cover the end faces of a cylindrical electrical resistance component 11 . It can also be provided that the connections only after the application of the resistance layer 15, the barrier e layer 23 and/or the protective layer 43 can be formed, whereby the barrier layer 23 cannot cover the resistive layer 15 in such embodiments, in particular in the direction of the end faces of the cylinder, in order to allow contact between the terminals 17 and the resistive layer 15.

11 electrical resistance component,

13 carriers

15 resistive layer

17 electrical connection

19 Surface of the resistive layer

21 surface texture

23 barrier layer

25 the carrier side facing away from the resistance layer

27 side of the barrier layer facing the resistance layer

29 side of the barrier layer facing away from the resistance layer

31 open cavity

33 wall section

35 wall section

37 return

39 opening

41 atomic layer

43 protective layer

45 etching mask

47 trim mm structure

49 gap

51 filled cavity

53 deepening

55 Surface structure of the barrier layer

57 lowest point

59 wall section of the filled cavity

61 section of the resistive layer

63 section of resistive layer

65 area of the barrier layer

67 section of the surface of the resistive layer

69 section of the surface of the barrier layer

71 surface of the carrier

77 edge

101 Providing a carrier

103 Attaching a connector

105 Attaching a resistive layer 107 Covering the resistive layer with a barrier layer

109 Applying a protective layer

111 Wet chemical removal of the barrier layer

B1 width

B2 width

D Thickness of the barrier layer

E extension plane

N1 normal to the surface of the resistive layer

N2 Normal of the surface of the resistive layer

S direction

Claims

Vishay Electronics GmbH

Expectations

1. Electrical resistance component (11), having an electrically insulating carrier (13), at least one resistance layer (15) on the carrier (13), and at least one electrical connection formed on the carrier (13) and connected to the resistance layer (15). (17), the resistance layer (15) having a surface structure (21) along its surface (19) on a side (25) remote from the carrier (13), and the resistance layer (15) being covered by a barrier layer (23). , wherein the barrier layer (23) comprises an inorganic material, and wherein the barrier layer (23) simulates the surface structure (21) of the resistance layer (15) continuously and with a uniform thickness (D).

2. Electrical resistance component (11) according to claim 1, wherein a ratio between a minimum thickness and a maximum thickness of the barrier layer (23) is greater than 0.8, in particular greater than 0.9.

3. Electrical resistance component (11) according to claim 1 or 2, wherein the thickness (D) of the barrier layer (23) is less than a roughness of a surface of the carrier (13) and/or a roughness of the surface structure (21) of the resistance layer (15) is.

4. Electrical resistance component (11) according to one of the preceding claims, wherein a roughness of a surface structure (55) of the barrier layer (23) on its side (29) facing away from the resistance layer (15) is less than a roughness of the surface structure (21) of the resistance layer (15).

5. Electrical resistance component (11) according to any one of the preceding claims, the surface structure (21) of the resistance layer (15) forming recesses (37), the barrier layer (23) covering the recesses (37) continuously and with a uniform thickness (D); and/or wherein the surface structure (21) of the resistance layer (15) forms open cavities (31) with wall sections (33, 35), the wall sections (33, 35) of a respective cavity (31) being in relation to the respective cavity (31) opposite one another, the barrier layer (23) covering the wall sections (33, 35) of the respective cavity (31).

6. Electrical resistance component (11) according to one of the preceding claims, wherein a surface (71) of the carrier (13) facing the resistance layer (15) forms at least one recess (38), the resistance layer (15) in the region of the recess (38 ) has a gap (49), and wherein the barrier layer (23) covers the recess (38) of the carrier (13) and the resistive layer (15) present in the vicinity of the gap (49) continuously and with a uniform thickness (D).

7. Electrical resistance component (11) according to any one of the preceding claims, wherein the barrier layer (23) has a thickness (D) of at most 1000 nanometers; and/or wherein the barrier layer (23) has a thickness (D) of at least 5 nanometers.

8. Electrical resistance component (11) according to one of the preceding claims, wherein the barrier layer (23) has an amorphous structure and/or a partially crystalline structure.

9. Electrical resistance component (11) according to one of the preceding claims, wherein the barrier layer (23) comprises a plurality of parallel superimposed atomic layers (41) which simulate the surface structure (21) of the resistance layer (15).

10. Electrical resistance component (11) according to any one of the preceding claims, wherein the barrier layer (23) has at least one layer (41) with an amorphous structure and/or at least one layer (41) with a partially crystalline structure.

11 . Electrical resistance component (11) according to one of the preceding claims, wherein the barrier layer (23) comprises at least one first layer formed from a first material and at least one second layer formed from a second material, the first material and the second material being different from one another.

12. Electrical resistance component (11) according to any one of the preceding claims, wherein the barrier layer (23) is electrically insulating or semiconductive.

13. Electrical resistance component (11) according to one of the preceding claims, wherein the barrier layer (23) is designed to be hermetically sealed.

14. Electrical resistance component (11) according to any one of the preceding claims, wherein the barrier layer (23) is formed by atomic layer deposition onto the resistance layer (15).

15. Electrical resistance component (11) according to one of the preceding claims, wherein the barrier layer (23) comprises a metal oxide, a semiconductor oxide, a metal nitride, a semiconductor nitride, a metal oxynitride and/or a semiconductor oxynitride, in particular aluminum oxide (AI2O3), titanium oxide (TiC >2) , titanium nitride (TiN _x ), hafnium dioxide (HfC>2) , zirconium dioxide (ZrC>2) and/or tungsten oxide (WO).

16. Electrical resistance component (11) according to any one of the preceding claims, wherein the barrier layer (23) is at least partially covered by a protective layer (43).

17. Electrical resistance component (11) according to claim 16, wherein the protective layer (43) comprises an organic material and/or an inorganic material. Electrical resistance component (11) according to claim 16 or 17, wherein the protective layer (43) comprises an epoxy resin, a polyimide, a polyamide, a polyimidamide, a silicone resin, an acrylate, a polyurethane and/or silicon dioxide (SiC>2). Electrical resistance component (11) according to one of the preceding claims, wherein the resistance layer (15) has a trimming structure (47). Electrical resistance component (11) according to one of the preceding claims, wherein the resistance layer comprises chromium, nickel, silicon, tantalum, molybdenum, niobium, aluminum, copper, titanium, carbon, tantalum nitride and/or a cermet. Electrical resistance component (11) according to one of the preceding claims, in which the resistance layer (15) is planar, hollow-cylindrical, meandering or spiral-shaped. Electrical resistance component (11) according to one of the preceding claims, wherein the carrier (13) comprises a ceramic substrate, in particular aluminum oxide (AI2O3), aluminum nitride (AIN) and/or silicon dioxide (SiC>2). Method for producing an electrical resistance component (11), in particular according to one of the preceding claims, having the steps:

Providing (101) an electrically insulating carrier (13),

- Attaching (103) at least one electrical connection (17) to the carrier (13),

- Attaching (105) at least one resistance layer (15) to the carrier (13), the resistance layer (15) having a surface structure (21) along its surface (19) on a side (25) facing away from the carrier (13), and Covering (107) the resistance layer (15) with a barrier layer (23), which comprises an inorganic material and the surface structure (21) of the resistance layer (15) continuously and with a uniform thickness (D) simulates.

24. The method according to claim 23, wherein the barrier layer (23) is applied by atomic layer deposition on the resistive layer (15).

25. The method according to claim 24, wherein the resistance layer (15) is covered with a plurality of layers (41) which together form the barrier layer (23).

The method of claim 25, wherein a first layer of the plurality of layers (41) is formed from a first material and a second layer of the plurality of layers (41) is formed from a second material, the first material and the second material being different from each other .

27. The method according to claim 25 or 26, wherein at least one layer of the plurality of layers (41) has an amorphous structure and/or wherein at least one layer of the plurality of layers (41) has a partially crystalline structure.

28. The method according to any one of claims 23 to 27, wherein the barrier layer (23) has a thickness (D) of at most 1000 nanometers; and/or wherein the barrier layer (23) has a thickness (D) of at least 5 nanometers.

29. The method according to any one of claims 23 to 28, wherein a protective layer (43) is applied (109) to the barrier layer (23).

30. The method according to claim 29, wherein the protective layer (43) comprises an organic and/or an inorganic material.

31 . Method according to Claim 29 or 30, in which the protective layer (43) is applied to the barrier layer (23) in a structured manner by means of screen printing. 32. The method according to any one of claims 29 to 31, wherein the barrier layer (23) in the region (65) of the connection (17) is removed wet-chemically, the protective layer (43) being used as an etching mask (45) (111).