EP4356443A1 - Dispositif électronique organique comprenant un composé de formule (1), dispositif d'affichage comprenant le dispositif électronique organique et composés de formule (1) destinés à être utilisés dans des dispositifs électroniques organiques - Google Patents

Dispositif électronique organique comprenant un composé de formule (1), dispositif d'affichage comprenant le dispositif électronique organique et composés de formule (1) destinés à être utilisés dans des dispositifs électroniques organiques

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Publication number
EP4356443A1
EP4356443A1 EP22737381.8A EP22737381A EP4356443A1 EP 4356443 A1 EP4356443 A1 EP 4356443A1 EP 22737381 A EP22737381 A EP 22737381A EP 4356443 A1 EP4356443 A1 EP 4356443A1
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EP
European Patent Office
Prior art keywords
substituted
unsubstituted
compound
formula
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22737381.8A
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German (de)
English (en)
Inventor
Vladimir UVAROV
Ulrich Heggemann
Steffen Willmann
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NovaLED GmbH
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NovaLED GmbH
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Filing date
Publication date
Application filed by NovaLED GmbH filed Critical NovaLED GmbH
Publication of EP4356443A1 publication Critical patent/EP4356443A1/fr
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Organic electronic device comprising a compound of formula (1), display device comprising the organic electronic device as well as compounds of formula (1) for use in organic electronic devices
  • the present invention relates to an organic electronic device comprising a compound of formula (1) and a display device comprising the organic electronic device.
  • the invention further relates to novel compounds of formula (1) which can be of use in organic electronic devices.
  • Organic electronic devices such as organic light-emitting diodes OLEDs, which are self- emitting devices, have a wide viewing angle, excellent contrast, quick response, high brightness, excellent operating voltage characteristics, and color reproduction.
  • a typical OLED comprises an anode, a hole transport layer HTL, an emission layer EML, an electron transport layer ETL, and a cathode, which are sequentially stacked on a substrate.
  • the HTL, the EML, and the ETL are thin films formed from organic compounds.
  • Performance of an organic light emitting diode may be affected by characteristics of the semiconductor layer, and among them, may be affected by characteristics of metal complexes which are also contained in the semiconductor layer.
  • An aspect of the present invention provides an organic electronic device comprising an anode, a cathode, at least one photoactive layer and at least one semiconductor layer, wherein the at least one semiconductor layer is arranged between the anode and the at least one photoactive layer; and wherein the at least one semiconductor layer comprises - a compound of Formula (1): wherein
  • B 1 is selected from substituted or unsubstituted C 2 to C 20 heteroaryl
  • B 2 is selected from Ci to Cs alkyl, substituted or unsubstituted Ce to C 19 aryl, substituted or unsubstituted C 2 to C 20 heteroaryl, substituted or unsubstituted C 2 to C 20 heterocycle; wherein the substituents on B 1 and B 2 are independently selected from D, halogen, Cl, F, CN, partially or perfluorinated Ci to Cs alkyl, partially or perfluorinated Ci to Cs alkoxy; and - a covalent matrix compound or substantially covalent matrix compound, wherein the calculated HOMO of the covalent matrix compound or substantially covalent matrix compound is in the range of ⁇ -4.5 eV and > 6.5 eV.
  • the organic electronic device comprises an anode, a cathode, at least one photoactive layer and at least one semiconductor layer, wherein the at least one semiconductor layer is arranged between the anode and the at least one photoactive layer; and wherein the at least one semiconductor layer comprises
  • B 1 is selected from substituted or unsubstituted C2 to C20 heteroaryl
  • B 2 is selected from Ci to Cs alkyl, substituted or unsubstituted Ce to C19 aryl, substituted or unsubstituted C2 to C20 heteroaryl, substituted or unsubstituted C2 to C20 heterocycle; wherein the substituents on B 1 and B 2 are independently selected from D, halogen, Cl, F, CN, partially or perfluorinated Ci to Cs alkyl, partially or perfluorinated Ci to Cs alkoxy; and
  • the at least one semiconductor layer can be a hole injection layer, and preferably the at least one semiconductor layer, which can be a hole injection layer, is non-emissive.
  • the negative charge in compounds of formula (1) may be delocalized partially or fully over the N(SC> 2 ) 2 group and optionally also over the B 1 and/or B 2 groups.
  • substituted refers to one substituted with a deuterium, also named D, halogen, Cl, F, CN, partially or perfluorinated Ci to Cs alkyl, partially or perfluorinated Ci to Cs alkoxy.
  • aryl substituted refers to a substitution with one or more aryl groups, which themselves may be substituted with one or more aryl and/or heteroaryl groups.
  • substituted or unsubstituted aryl or “substituted or unsubstituted Ce to Ci 9 aryl” are includes aryl compounds of “fused aryl rings” or “condensed aryl rings”.
  • heteroaryl substituted refers to a substitution with one or more heteroaryl groups, which themselves may be substituted with one or more aryl and/or heteroaryl groups.
  • substituted or unsubstituted heteroaryl or “substituted or unsubstituted C 2 to C 20 heteroaryl” are includes heteroaryl compounds of “fused heteroaryl rings” or “condensed aryl rings” or “fused heteroaryl rings comprising at least one non-heteroaryl ring” or “condensed aryl rings comprising at least one non-heteroaryl ring”.
  • fused aryl rings or “condensed aryl rings” is understood the way that two aryl rings are considered fused or condensed when they share at least two common sp 2 -hybridized carbon atoms.
  • heteroaryl substituted refers to a substitution with one or more heteroaryl groups, which themselves may be substituted with one or more aryl and/or heteroaryl groups.
  • an "alkyl group” refers to a saturated aliphatic hydrocarbyl group.
  • the alkyl group may be a Ci to C 12 alkyl group or Ci to C 8 alkyl group. More specifically, the alkyl group may be a Ci to C 10 alkyl group or a Ci to Ce alkyl group.
  • a Ci to C 4 alkyl group includes 1 to 4 carbons in alkyl chain, and may be selected from methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, and tert- butyl.
  • alkyl group may be a methyl group, an ethyl group, a propyl group, an iso-propyl group, a butyl group, an iso-butyl group, a tert-butyl group, a pentyl group, a hexyl group.
  • cycloalkyl refers to saturated hydrocarbyl groups derived from a cycloalkane by formal abstraction of one hydrogen atom from a ring atom comprised in the corresponding cycloalkane.
  • examples of the cycloalkyl group may be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a methyl cyclohexyl group, an adamantly group and the like.
  • hetero is understood the way that at least one carbon atom, in a structure which may be formed by covalently bound carbon atoms, is replaced by another polyvalent atom.
  • the heteroatoms are selected from B, Si, N, P, O, S; more preferably from N, P, O, S, and most preferred N.
  • fused ring system is understood to mean a ring system wherein two or more rings share at least two atoms.
  • the term ”5-, 6- or 7-member ring is understood to mean a ring comprising 5, 6 or 7 atoms.
  • the atoms may be selected from C and one or more hetero-atoms.
  • the single bond refers to a direct bond.
  • contacts or “contacting” refers to an arrangement of at least two layers whereby a first layer is in direct contact with an adjacent second layer.
  • photoactive layer may comprise “light-absorbing layer” and “light absorption layer” are used synonymously.
  • photoactive layer may comprise layer such as “light-emitting layer”, “light emission layer” and “emission layer”.
  • OLED organic light-emitting diode
  • organic light-emitting device organic light-emitting device
  • anode and anode electrode are used synonymously.
  • at least two anode sub-layers is understood to mean two or more anode sub-layers, for example two or three anode sub-layers.
  • cathode and cathode electrode are used synonymously.
  • hole transport layer is understood to mean a layer which transports holes between the hole injection layer and further layers arranged between the hole injection layer and the cathode layer.
  • the operating voltage U is measured in Volt.
  • the term “essentially non-emissive” or “non- emissive” means that the contribution of compound of Formula (1), covalent matrix compound, substantially covalent matrix compound, matrix compound of formula (2) or formula (3), metal complex and/or layer, such as hole injection layer, to the visible emission spectrum from an organic electronic device, such as OLED or display device, is less than 10 %, preferably less than 5 % relative to the visible emission spectrum.
  • the visible emission spectrum is an emission spectrum with a wavelength of about > 380 nm to about ⁇ 780 nm.
  • hole characteristics refer to an ability to donate an electron to form a hole when an electric field is applied and that a hole formed in the anode may be easily injected into the emission layer and transported in the emission layer due to conductive characteristics according to a highest occupied molecular orbital (HOMO) level.
  • HOMO highest occupied molecular orbital
  • electron characteristics refer to an ability to accept an electron when an electric field is applied and that electrons formed in the cathode may be easily injected into the emission layer and transported in the emission layer due to conductive characteristics according to a lowest unoccupied molecular orbital (LUMO) level.
  • LUMO lowest unoccupied molecular orbital
  • HOMO level is understood to mean the highest occupied molecular orbital and is determined in eV (electron volt).
  • HOMO level further away from vacuum level is understood to mean that the absolute value of the HOMO level is higher than the absolute value of the HOMO level of the reference compound.
  • the term “further away from vacuum level than the HOMO level of N2,N2,N2',N2',N7,N7,N7',N7'-octakis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-2,2',7,7'- tetraamine is understood to mean that the absolute value of the HOMO level of the covalent matrix compound or substantially covalent matrix compound of the hole injection layer is higher than the HOMO level of N2,N2,N2',N2', N7,N7, N7',N7'-octakis(4-methoxyphenyl)-9,9'- spirobi[fluorene]-2,2',7,7'-tetraamine.
  • the HOMO level of the covalent matrix compound or substantially covalent matrix compound, preferably the matrix compound of the hole injection layer may be calculated by quantum mechanical methods.
  • the work function of the first metal is measured in eV (electron volt). Tabulated values of work functions can be found for example in CRC Handbook of Chemistry and Physics version 2008, p. 12-114. Further, tabulated values of work functions can be found for example at https://en. wikipedia. org/wiki/W ork_function#cite_note- 12.
  • the organic electronic device according to the invention solves the problem underlying the present invention by enabling organic electronic devices, such as organic light-emitting diodes, in various aspects superior over the organic electronic devices known in the art, in particular with respect to operating voltage, efficiency, lifetime and/or voltage stability over time.
  • At least one of B 1 and B 2 is substituted with Ci to Cs alkyl or Ci to Cs alkoxy and the substituents of the Ci to Cs alkyl or Ci to C 8 alkoxy moiety are fluorine with the number m (of fluorine substituents) and n H (of hydrogens) follow the equation: m > n H + 2.
  • at least one of B 1 and B 2 is substituted with perfluorinated C i to Cs alkyl or perfluorinated Ci to Cs alkoxy.
  • At least one of B 1 and B 2 is substituted with partially or perfluorinated C 3 to Ce alkyl.
  • B 1 is a substituted or unsubstituted heteroaryl 6-member ring with at least 3 N atoms, at least 2 N atoms or at least 1 N atom and the remaining atoms are C. According to one embodiment B 1 is a substituted or unsubstituted heteroaryl 6-member ring with at least 2 N atoms and the remaining atoms are C. According to one embodiment B 1 is a substituted or unsubstituted heteroaryl 6-member ring with at least 1 N atoms and the remaining atoms are C.
  • B 1 is a mono-substituted heteroaryl 6-member ring with at least 3 N atoms and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 1 is a mono-substituted heteroaryl 6-member ring with at least 2 N atoms and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 1 is a mono-substituted heteroaryl 6-member ring with at least 1 N atoms and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 1 is a di-substituted heteroaryl 6-member ring with at least 3 N atoms and the remaining atoms are C, wherein the substituent is CF3 or CN.
  • B 1 is a di-substituted heteroaryl 6-member ring with at least 2 N atoms and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 1 is a di-substituted heteroaryl 6-member ring with at least 1 N atoms and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 1 is a substituted or unsubstituted heteroaryl 6-member ring with one N atom and the remaining atoms are C substituted with one or two substituents selected from CF 3 or CN.
  • B 1 is selected from the group comprising substituted or unsubstituted pyridyl or substituted or unsubstituted 3-pyridyl.
  • B 2 is substituted C 6 -aryl, a substituted heteroaryl 6- member ring with one N atoms or a substituted heteroaryl of a 5-member ring with one or two heteroatoms selected from N or S, preferably N, and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 2 is selected from the group of perfluorinated Ci to Ce alkyl, CF , C 2 F 5 , C 3 F 7 or C 4 F 9 .
  • B 2 is selected from tetra or penta fluorinated C 6 -aryl or persubstituted C 6 -aryl, wherein 4 substituents are F and one substituent is selected CF3, C2F5, C3F7 or C4F9, preferably CF3 .
  • B 2 is selected from persubstituted C 6 -aryl, wherein 4 substituents are F and one is CN .
  • B 2 is selected from mono-substituted heteroaryl of a 5- member ring with two hetero atoms of N or N and S, wherein the substituent is CN or CF3, preferably CF3 .
  • B 2 is selected from di- substituted heteroaryl of a 5- member ring with two hetero atoms of N, or N and S, wherein the substituents are CN or CF3, preferably CF3 .
  • B 1 is a substituted or unsubstituted heteroaryl 6-member ring with one N atom and the remaining atoms are C substituted with one or two substituents selected from F, CF3 or CN, preferably CF 3 or CN; and B 2 is a substituted C 6 -aryl, a substituted heteroaryl 5- or 6- member ring with one or two heteroatoms selected from N or S, preferably N, and the remaining atoms are C, wherein the substituent is F, CF 3 or CN, preferably CF 3 or CN, further B 2 is a perfluorinated Ci to Ce alkyl, CF 3 , C 2 F 5 , C 3 F 7 or C 4 F 9 , or B 2 is selected from tetra or penta fluorinated C6-aryl or persubstituted C6-aryl, wherein 4 substituents are F and one substituent is selected CF 3 , C 2 F 5 , C 3 F 7 or C 4 F 9 , where
  • B 2 is phenyl or six-membered heteroaryl, which is substituted with 1 to 5 F atoms.
  • the anion of compound of formula (1) is selected from the anions (Al) to (A71):
  • the metal complex according to formula (1) is non-emissive.
  • the term “essentially non-emissive” or “non-emissive” means that the contribution of the metal complex according to formula (1) to the visible emission spectrum from an organic electronic device, such as OLED or display device, is less than 10 %, preferably less than 5 % relative to the visible emission spectrum.
  • the visible emission spectrum is an emission spectrum with a wavelength of about > 380 nm to about ⁇ 780 nm.
  • the valency n of M of the metal complex according to formula (1) is 1,2, 3 or 4; preferably 1, 2 or 3; more preferred 1 or 2.
  • M has an atomic mass of > 22Da, alternatively > 24Da.
  • M is selected from a metal ion wherein the corresponding metal has an electronegativity value according to Allen of less than 2.4, preferably less than 2, more preferred less than 1.9.
  • Allen an electronegativity value according to Allen of less than 2.4, preferably less than 2, more preferred less than 1.9.
  • the valency n of M is 1 or 2.
  • M is selected from a metal ion wherein the corresponding metal has an electronegativity value according to Allen of less than
  • n of M is 1 or 2.
  • M is selected from an alkali, alkaline earth, rare earth or transition metal, alternatively M is selected from alkali, alkaline earth, or a period 4 or 5 transition metal.
  • M is selected from a metal ion wherein the corresponding metal has an electronegativity value according to Allen of less than
  • M is selected from alkali, alkaline earth, rare earth or a period 4 or 5 transition metal and M has an atomic mass of > 22Da, alternatively > 24Da.
  • M is selected from an alkaline earth metal, transition metal or rare earth metal, preferably Cu(II), Ag(I), Zn(II), Fe(II), Fe(III), Mg(II), and more preferred Cu(II), Ag(I), Zn(II) or Fe(II).
  • M is selected from Fi, Na, K, Cs, Mg, Mn, Cu, Zn, Ag and Mo; preferably M is selected from Na, K, Cs, Mg, Mn, Cu, Zn and Ag; also preferred M is selected from Na, K, Mg, Mn, Cu, Zn and Ag, wherein if M is Cu, n is 2.
  • M is not Ag.
  • M is not Cu.
  • the compound of formula (1) is selected from the compounds D1 to D8:
  • the at least one semiconductor layer comprising the compound of formula (1) is an organic semiconductor layer, and preferably the at least one semiconductor layer is non-emissive.
  • the term “essentially non-emissive” or “non- emissive” means that the contribution of the compound or layer to the visible emission spectrum from the device is less than 10 %, preferably less than 5 % relative to the visible emission spectrum.
  • the visible emission spectrum is an emission spectrum with a wavelength of about > 380 nm to about ⁇ 780 nm.
  • At least one semiconductor layer is arranged and/or provided adjacent to the anode. According to one embodiment of the invention, at least one semiconductor layer is in direct contact with the anode.
  • the at least one semiconductor layer of the present invention is a hole- injection layer.
  • the at least one of the semiconductor layers is a hole-injection layer, which consists of at least one compound of formula (1) or comprises at least one compound of formula (1).
  • the at least one semiconductor layer of the present invention is a hole- injection layer and/ or is arranged and/or provided adjacent to the anode then it is especially preferred that this layer consists essentially of the compound of formula (1).
  • the at least one semiconductor layer may have a layer thickness of at least about > 0.5 nm to about ⁇ 10 nm, preferably of about > 2 nm to about ⁇ 8 nm, also preferred of about > 3 nm to about ⁇ 5 nm.
  • At least one semiconductor layer of the present invention further comprises a covalent matrix compound or substantially covalent matrix compound.
  • at least one semiconductor layer further comprising a covalent matrix compound or substantially covalent matrix compound is arranged and/or provided adjacent to the anode.
  • covalent matrix compounds are organic compounds, consisting predominantly from covalently bound C, H, O, N, S, which may optionally comprise also covalently bound B, P, As, Se.
  • Organometallic compounds comprising covalent bonds carbon- metal, metal complexes comprising organic ligands and metal salts of organic acids are further examples of organic compounds that may serve as organic covalent matrix compound or substantially covalent matrix compounds.
  • the covalent matrix compound or substantially covalent matrix compound lacks metal atoms and majority of its skeletal atoms is selected from C, O, S, N.
  • the covalent matrix compound or substantially covalent matrix compound lacks metal atoms and majority of its skeletal atoms is selected from C and N.
  • the HOMO level of the covalent matrix compound or substantially covalent matrix compound may be more negative than the HOMO level of N2,N2,N2',N2',N7,N7,N7',N7'-octakis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-2,2',7,7'- tetraamine (CAS 207739-72-8) when determined under the same conditions.
  • the semiconductor layer further comprises a covalent matrix compound or substantially covalent matrix compound with an oxidation potential more positive than - 0.2 V and more negative than 1.22 V, when measured by cyclic voltammetry in dichloromethane vs. Fc/Fc+, preferably more positive than - 0.18 V and more negative than 1.12 V.
  • the oxidation potential of spiro-MeO-TAD (CAS 207739-72-8) is -0.07 V.
  • the HOMO level of the covalent matrix compound or substantially covalent matrix compound may be more negative than the HOMO level of N2,N2,N2',N2',N7,N7,N7',N7'-octakis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-2,2',7,7'- tetraamine (CAS 207739-72-8) and more positive than the HOMO level of N4,N4"'- di(naphthalen-l-yl)-N4,N4"'-diphenyl-[l,r:4',l":4",r"-quaterphenyl]-4,4"'-diamine when determined under the same conditions.
  • the covalent matrix compound or substantially covalent matrix compound may be free of alkoxy, COR 1 and/or COOR 1 groups, and wherein R 1 on COR 1 and/or COOR 1 is selected from aryl, heteroaryl, alkyl, alkoxy, branched alkyl, cyclic alkyl, branched alkoxy, cyclic alkoxy, partially or perfluorinated alkyl, partially or perfluorinated alkoxy, partially or perdeuterated alkyl, partially or perdeuterated alkoxy.
  • the calculated HOMO level of the covalent matrix compound or substantially covalent matrix compound may be selected in the range of ⁇ -4.6 eV and > -6 eV, alternatively in the range of ⁇ -4.65 eV and > -5 eV, alternatively in the range of ⁇ -4.67 eV and > -5 eV, alternatively in the range of ⁇ -4.67 eV and > -4.85 eV.
  • the at least one semiconductor layers further comprises a covalent matrix compound or a substantially covalent matrix compound, preferably the covalent matrix compound or a substantially covalent matrix compound is selected from at least one arylamine compound, a diarylamine compound or a triarylamine compound.
  • the covalent matrix compound or substantially covalent matrix compound comprises at least one arylamine compound, alternatively a diarylamine compound, alternatively a triarylamine compound.
  • the covalent matrix compound or substantially covalent matrix compound may comprises a compound of formula (2) or formula (3): wherein
  • T 1 , T 2 , T 3 , T 4 and T 5 may be independently selected from a single bond, phenylene, biphenylene, terphenylene or naphthenylene, preferably a single bond or phenylene;
  • T 6 is phenylene, biphenylene, terphenylene or naphthenylene
  • Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 may be independently selected from substituted or unsubstituted Ce to C20 aryl, or substituted or unsubstituted C3 to C20 heteroarylene, substituted or unsubstituted biphenylene, substituted or unsubstituted fluorene, substituted 9-fluorene, substituted 9,9-fluorene, substituted or unsubstituted naphthalene, substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted pyrene, substituted or unsubstituted perylene, substituted or unsubstituted triphenylene, substituted or unsubstituted tetracene, substituted or unsubstituted tetraphene, substituted or unsubstituted dibenzofurane, substituted or unsubstituted dibenzothioph
  • the substituents of Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 are selected the same or different from the group comprising H, straight-chain alkyl having 1 to 6 carbon atoms, branched alkyl having 1 to 6 carbon atoms, cyclic alkyl having 3 to 6 carbon atoms, alkenyl or alkynyl groups having 2 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, Ce to Cix aryl, C3 to Cix heteroaryl, a fused ring system comprising 2 to 4 unsubstituted 5- to 7-member rings and the rings are selected from the group comprising unsaturated 5- to 7-member ring of a heterocycle, 5- to 6- member of an aromatic heterocycle, unsaturated 5- to 7-member ring of a non-heterocycle, and 6- member ring of an aromatic non-heterocycle; more preferred the substituents are selected the same or different from the group consisting of H, straight-chain alkyl
  • covalent matrix compound or substantially covalent matrix compound comprises a compound of formula (2) or formula (3): wherein
  • T 1 , T 2 , T 3 , T 4 and T 5 may be independently selected from a single bond, phenylene, biphenylene, terphenylene or naphthenylene, preferably a single bond or phenylene;
  • T 6 is phenylene, biphenylene, terphenylene or naphthenylene
  • Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 may be independently selected from unsubstituted C 6 to C20 aryl, or unsubstituted C3 to C20 heteroarylene, unsubstituted biphenylene, unsubstituted fluorene, substituted 9-fluorene, substituted 9,9-fluorene, unsubstituted naphthalene, unsubstituted anthracene, unsubstituted phenanthrene, unsubstituted pyrene, unsubstituted perylene, unsubstituted triphenylene, unsubstituted tetracene, unsubstituted tetraphene, unsubstituted dibenzofurane, unsubstituted dibenzothiophene, unsubstituted xanthene, unsubstituted carbazole, substituted 9-phenylcarbazole, unsubstit
  • covalent matrix compound or substantially covalent matrix compound preferably of the covalent matrix compound or substantially covalent matrix compound of the hole injection layer, comprises a compound of formula (2) or formula (3): wherein
  • T 1 , T 2 , T 3 , T 4 and T 5 may be independently selected from a single bond, phenylene, biphenylene, terphenylene or naphthenylene, preferably a single bond or phenylene;
  • T 6 is phenylene, biphenylene, terphenylene or naphthenylene
  • Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 may be independently selected from unsubstituted C6to C20 aryl, or unsubstituted C3 to C20 heteroarylene, unsubstituted biphenylene, unsubstituted fluorene, substituted 9-fluorene, substituted 9,9-fluorene, unsubstituted naphthalene, unsubstituted anthracene, unsubstituted phenanthrene, unsubstituted pyrene, unsubstituted perylene, unsubstituted triphenylene, unsubstituted tetracene, unsubstituted tetraphene, unsubstituted dibenzofurane, unsubstituted dibenzothiophene, unsubstituted xanthene, unsubstituted carbazole, substituted 9-phenylcarbazole, unsubstit
  • the compound of formula (2) or (3) may have a rate onset temperature suitable for mass production.
  • T 1 , T 2 , T 3 , T 4 and T 5 may be independently selected from a single bond, phenylene, biphenylene or terphenylene. According to an embodiment wherein T 1 , T 2 , T 3 , T 4 and T 5 may be independently selected from phenylene, biphenylene or terphenylene and one of T 1 , T 2 , T 3 , T 4 and T 5 are a single bond. According to an embodiment wherein T 1 , T 2 , T 3 , T 4 and T 5 may be independently selected from phenylene or biphenylene and one of T 1 , T 2 , T 3 , T 4 and T 5 are a single bond.
  • T 1 , T 2 , T 3 , T 4 and T 5 may be independently selected from phenylene or biphenylene and two of T 1 , T 2 , T 3 , T 4 and T 5 are a single bond.
  • T 1 , T 2 and T 3 may be independently selected from phenylene and one of T 1 , T 2 and T 3 are a single bond.
  • T 1 , T 2 and T 3 may be independently selected from phenylene and two of T 1 , T 2 and T 3 are a single bond.
  • T 6 may be phenylene, biphenylene, terphenylene. According to an embodiment wherein T 6 may be phenylene. According to an embodiment wherein T 6 may be biphenylene. According to an embodiment wherein T 6 may be terphenylene.
  • Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 may be independently selected from D1 to D16: According to an embodiment, wherein Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 may be independently selected from D1 to D15; alternatively selected from D1 to DIO and D13 to D15.
  • Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 may be independently selected from the group consisting of Dl, D2, D5, D7, D9, DIO, D13 to D16.
  • the rate onset temperature may be in a range particularly suited to mass production, when Ar 1 , Ar 2 , Ar 3 , Ar 4 and Ar 5 are selected in this range.
  • the matrix compound of formula (2) or formula (3) may comprises at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems comprising heteroaromatic rings.
  • the matrix compound of formula (2) or formula (3) may comprises at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems comprising heteroaromatic rings and at least > 1 to ⁇ 3 substituted or unsubstituted unsaturated 5- to 7- member ring of a heterocycle, preferably > 2 to ⁇ 5 substituted or unsubstituted aromatic fused ring systems comprising heteroaromatic rings.
  • the matrix compound of formula (2) or formula (3) may comprises at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems comprising heteroaromatic rings and at least > 1 to ⁇ 3 substituted or unsubstituted unsaturated 5- to 7- member ring of a heterocycle, preferably > 2 to ⁇ 5 substituted or unsubstituted aromatic fused ring systems comprising heteroaromatic rings, and at least > 1 to ⁇ 3 substituted or unsubstituted unsaturated 5- to 7-member ring of a heterocycle, further preferred 3 or 4 substituted or unsubstituted aromatic fused ring systems comprising heteroaromatic rings and optional at least >
  • the matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems, preferably >
  • the matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems, preferably > 2 to ⁇ 5 substituted or unsubstituted aromatic fused ring systems, and further preferred 3 or 4 substituted or unsubstituted aromatic fused ring systems, which comprises substituted or unsubstituted heteroaromatic rings.
  • the matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 3 or 2 substituted or unsubstituted unsaturated 5- to 7-member ring of a heterocycle.
  • the matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 3 or 2 substituted or unsubstituted unsaturated 7-member ring of a heterocycle.
  • substituted or unsubstituted aromatic fused ring systems of the covalent matrix compound or substantially covalent matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 3 or 2 substituted or unsubstituted unsaturated 5- to 7- member ring of a heterocycle.
  • the substituted or unsubstituted aromatic fused ring systems of the covalent matrix compound or substantially covalent matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 3 or 2 substituted or unsubstituted unsaturated 7- member ring of a heterocycle.
  • the matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems, preferably > 2 to ⁇ 5 substituted or unsubstituted aromatic fused ring systems, and further preferred 3 or 4 substituted or unsubstituted aromatic fused ring systems, and wherein the aromatic fused ring system comprises substituted or unsubstituted unsaturated 5- to 7-member ring of a heterocycle.
  • the matrix compound of formula (2) or formula (3) may comprises at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems, preferably > 2 to ⁇ 5 substituted or unsubstituted aromatic fused ring systems, and further preferred 3 or 4 substituted or unsubstituted aromatic fused ring systems, which comprises substituted or unsubstituted heteroaromatic rings, and wherein the aromatic fused ring system comprises substituted or unsubstituted unsaturated 5- to 7-member ring of a heterocycle.
  • the matrix compound of formula (2) or formula (3) may comprise at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems, preferably > 2 to ⁇ 5 substituted or unsubstituted aromatic fused ring systems, and further preferred 3 or 4 substituted or unsubstituted aromatic fused ring systems, and wherein the aromatic fused ring system comprises at least > 1 to ⁇ 3 or 2 substituted or unsubstituted unsaturated 5- to 7-member ring of a heterocycle.
  • the matrix compound of formula (2) or formula (3) may comprises at least > 1 to ⁇ 6 substituted or unsubstituted aromatic fused ring systems, preferably
  • the matrix compound of formula (2) or formula (3) may comprise:
  • an unsubstituted aromatic fused ring systems with at least > 2 to ⁇ 6, preferably > 3 to ⁇ 5, or 4 fused aromatic rings selected from the group comprising unsubstituted non-hetero aromatic rings, unsubstituted hetero 5-member rings, unsubstituted 6-member rings and/or unsubstituted unsaturated 5- to 7-member ring of a heterocycle.
  • aromatic fused ring system may include at least one aromatic ring and at least one substituted or unsubstituted unsaturated 5- to 7- member ring.
  • substituted or unsubstituted unsaturated 5- to 7- member ring may not be an aromatic ring.
  • the matrix compound of formula (2) or formula (3) may comprise at least at least > 1 to ⁇ 6, preferably > 2 to ⁇ 5, or further preferred 3 or 4 of the substituted or unsubstituted aromatic fused ring systems with:
  • the matrix compound of formula (2) or formula (3) may comprise at least at least > 1 to ⁇ 6, preferably > 2 to ⁇ 5, or further preferred 3 or 4 of the substituted or unsubstituted aromatic fused ring systems with:
  • At least one aromatic 7-member ring wherein preferably at least one aromatic 5- and/or at least one aromatic 7-member ring comprises at least 1 to 3, preferably 1 hetero-atom; wherein the substituted or unsubstituted aromatic fused ring system comprises at least > 1 to ⁇ 3 or 2 substituted or unsubstituted unsaturated 5- to 7-member ring of a heterocycle.
  • the matrix compound of formula (2) or formula (3) may comprise :
  • non-hetero aromatic rings are aromatic Ce rings;
  • the hole transport compound or the hole transport compound according to formula I comprises at least > 1 to ⁇ 4, preferably 2 or 3 aromatic 5 -member-rings, preferably hetero aromatic 5-member-rings, and/or the hole transport compound or the hole transport compound according to formula (1) comprises at least 1 or 2 unsaturated 5- to 7-member-ring of a heterocycle, preferably at least 1 or 2 unsaturated 7-member-ring of a heterocycle.
  • the matrix compound of formula (2) or formula (3) may comprise a hetero-atom, which may be selected from the group comprising O, S, N, B or P, preferably the hetero-atom may be selected from the group comprising O, S or N.
  • the matrix compound of formula (2) or formula (3) may comprise at least at least > 1 to ⁇ 6, preferably > 2 to ⁇ 5, or further preferred 3 or 4 of the substituted or unsubstituted aromatic fused ring systems with:
  • the substituted or unsubstituted aromatic fused ring system optional comprises at least > 1 to ⁇ 3 or 2 substituted or unsubstituted unsaturated 5- to 7-member ring of a heterocycle; and wherein the substituted or unsubstituted aromatic fused ring system comprises a hetero-atom, which may be selected from the group comprising O, S, N, B, P or Si, preferably the hetero-atom may be selected from the group comprising O, S or N.
  • the matrix compound of formula (2) or formula (3) may be free of hetero-atoms which are not part of an aromatic ring and/or part of an unsaturated 7- member-ring, preferably the hole transport compound or the hole transport compound according to formula (1) may be free on N-atoms except N-atoms which are part of an aromatic ring or are part of an unsaturated 7-member-ring.
  • the hole transport compound comprises at least one naphthyl group, carbazole group, dibenzofurane group, dibenzothiophene group and/or substituted fluorenyl group, wherein the substituents are independently selected from methyl, phenyl or fluorenyl.
  • the matrix compound of the hole injection layer may be free of HTM014, HTM081, HTM163, HTM222, EL-301, HTM226, HTM355, HTM133, HTM334, HTM604 and EL-22T.
  • the abbreviations denote the manufacturers' names, for example, of Merck or Lumtec.
  • the at least one semiconductor layer further comprises a covalent matrix compound or substantially covalent matrix compound and may comprise:
  • the at least one semiconductor layer may further comprise a covalent matrix compound or substantially covalent matrix compound and may comprise > 1 and ⁇ 30 mol.-% of a compound of formula (1) and ⁇ 99 and > 70 mol.-% of a covalent matrix compound or substantially covalent matrix compounds; alternatively > 1 and ⁇
  • the electronic organic device is an electroluminescent device, preferably an organic light emitting diode.
  • the present invention furthermore relates to a display device comprising an organic electronic device according to the present invention.
  • the present invention furthermore relates to a compound of formula (la), wherein
  • B 1 is selected from substituted or unsubstituted pyridyl
  • B 2 is selected from Ci to Cs alkyl, substituted or unsubstituted Ce to C 19 aryl, substituted or unsubstituted C 2 to C 20 heteroaryl, substituted or unsubstituted C 2 to C 20 heterocycle; wherein the substituents on B 1 and B 2 are independently selected from D, halogen, Cl, F, CN, partially or perfluorinated Ci to Cs alkyl, partially or perfluorinated Ci to C8 alkoxy; wherein M is selected from an alkaline earth metal, transition metal or rare earth metal, preferably Cu(II), Ag(I), Zn(II), Fe(II), Fe(III), Mg(II), and more preferred Cu(II), Ag(I), Zn(II) or Fe(II).
  • B 2 is substituted C6-aryl, a substituted heteroaryl 6- member ring with one N atoms or a substituted heteroaryl of a 5-member ring with one or two heteroatoms selected from N or S, preferably N, and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 2 is selected from the group of perfluorinated Ci to Ce alkyl, CF , C 2 F 5 , C 3 F 7 or C 4 F 9 .
  • B 2 is selected from tetra or penta fluorinated C6-aryl or persubstituted C6-aryl, wherein 4 substituents are F and one substituent is selected CF 3 , C 2 F 5 ,
  • B 2 is selected from persubstituted C6-aryl, wherein 4 substituents are F and one is CN .
  • B 2 is selected from mono-substituted heteroaryl of a 5- member ring with two hetero atoms of N or N and S, wherein the substituent is CN or CF 3 , preferably CF 3.
  • B 2 is selected from di-substituted heteroaryl of a 5 -member ring with two hetero atoms of N, or N and S, wherein the substituents are CN or CF 3 , preferably CF 3
  • the present invention furthermore relates to a compound of formula (lb) wherein
  • M is a metal ion
  • n is the valency of M
  • B 1 is selected from substituted or unsubstituted 3-pyridyl
  • B 2 is selected from substituted or unsubstituted Ci to Cs alkyl, substituted or unsubsituted
  • Ce to Ci9 aryl substituted or unsubstituted C2 to C20 heteroaryl; wherein the substituents on B 1 and B 2 are independently selected from D, halogen, Cl, F, CN, partially or perfluorinated Ci to Cs alkyl, partially or perfluorinated Ci to C8 alkoxy; n is an integer from 1 to 4.
  • M is selected from an alkali, alkaline earth metal, transition metal or rare earth metal, preferably Li(I), Cu(II), Ag(I), Zn(II), Fe(II), Fe(III), Mg(II), and more preferred Cu(II), Ag(I), Zn(II) or Fe(II).
  • M is selected from a transition metal and n is 1 or 2.
  • B 2 is substituted C 6 -aryl, a substituted heteroaryl 6- member ring with one N atoms or a substituted heteroaryl of a 5-member ring with one or two heteroatoms selected from N or S, preferably N, and the remaining atoms are C, wherein the substituent is CF 3 or CN.
  • B 2 is selected from the group of perfluorinated Ci to Ce alkyl, CF , C 2 F 5 , C 3 F 7 or C 4 F 9 .
  • B 2 is selected from tetra or penta fluorinated C 6 -aryl or persubstituted C 6 -aryl, wherein 4 substituents are F and one substituent is selected CF 3 , C 2 F 5 , C 3 F 7 or C 4 F 9 , preferably CF 3.
  • B 2 is selected from persubstituted C 6 -aryl, wherein 4 substituents are F and one is CN .
  • B 2 is selected from mono-substituted heteroaryl of a 5- member ring with two hetero atoms of N or N and S, wherein the substituent is CN or CF3, preferably CF3 .
  • B 2 is selected from di-substituted heteroaryl of a 5 -member ring with two hetero atoms of N, or N and S, wherein the substituents are CN or CF3, preferably CF 3
  • the negative charge in compounds of formula (1) may be delocalized partially or fully over the N(SC>2)2 group and optionally also over the B 1 and/or B 2 groups.
  • the organic electronic device may comprise, besides the layers already mentioned above, further layers. Exemplary embodiments of respective layers are described in the following:
  • the substrate may be any substrate that is commonly used in manufacturing of, electronic devices, such as organic light-emitting diodes. If light is to be emitted through the substrate, the substrate shall be a transparent or semitransparent material, for example a glass substrate or a transparent plastic substrate. If light is to be emitted through the top surface, the substrate may be both a transparent as well as a non-transparent material, for example a glass substrate, a plastic substrate, a metal substrate, a silicon substrate or a backplane for a display.
  • the anode electrode also named anode layer, may be formed by depositing or sputtering a material that is used to form the anode electrode.
  • the material used to form the anode electrode may be a high work-function material, so as to facilitate hole injection.
  • the anode material may also be selected from a low work function material (i.e. aluminum).
  • the anode electrode may be a transparent or reflective electrode.
  • Transparent conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), tin-dioxide (Sn02), aluminum zinc oxide (A1ZO) and zinc oxide (ZnO), may be used to form the anode electrode.
  • the anode electrode may also be formed using metals, typically silver (Ag), gold (Au), or metal alloys.
  • a hole injection layer may be formed on the anode electrode by vacuum deposition, spin coating, printing, casting, slot-die coating, Langmuir-Blodgett (LB) deposition, or the like.
  • the deposition conditions may vary according to the compound that is used to form the HIL, and the desired structure and thermal properties of the HIL. In general, however, conditions for vacuum deposition may include a deposition temperature of 100° C to 500° C, a pressure of 10 8 to 10 3 Torr (1 Torr equals 133.322 Pa), and a deposition rate of 0.1 to 10 nm/sec.
  • coating conditions may vary according to the compound that is used to form the HIL, and the desired structure and thermal properties of the HIL.
  • the coating conditions may include a coating speed of about 2000 rpm to about 5000 rpm, and a thermal treatment temperature of about 80° C to about 200°
  • Thermal treatment removes a solvent after the coating is performed.
  • the HIL may be formed of any compound that is commonly used to form a HIL.
  • examples of compounds that may be used to form the HIL include a phthalocyanine compound, such as copper phthalocyanine (CuPc), 4,4',4"-tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA), TDATA, 2T-NATA, polyaniline/dodecyl benzenesulfonic acid (Pani/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (Pani/CSA), and polyaniline)/poly(4-styrenesulfonate (PANI/PSS).
  • CuPc copper phthalocyanine
  • m-MTDATA 4,4',4"-tris (3-methylphenylphenylamino) triphenylamine
  • the thickness of the HU. may be in the range from about 1 nm to about 100 nm, and for example, from about 1 nm to about 25 nm. When the thickness of the HIL is within this range, the HIL may have excellent hole injecting characteristics, without a substantial penalty in driving voltage.
  • a hole transport layer may be formed on the HIL by vacuum deposition, spin coating, slot-die coating, printing, casting, Langmuir-Blodgett (LB) deposition, or the like.
  • the conditions for deposition and coating may be similar to those for the formation of the HIL.
  • the conditions for the vacuum or solution deposition may vary, according to the compound that is used to form the HTL.
  • the organic electronic device further comprises a hole transport layer, wherein the hole transport layer is arranged between the semiconductor layer and the at least one photoactive layer.
  • the hole transport layer comprises a covalent matrix compound or substantially covalent matrix compound.
  • the at least one semiconductor layer and the hole transport layer comprise a covalent matrix compound or substantially covalent matrix compound, wherein the covalent matrix compound or substantially covalent matrix compound is selected the same in both layers.
  • the hole transport layer comprises a compound of formula (2)or (3).
  • the at least one semiconductor layer and the hole transport layer comprise a compound of formula (2), (2a) or (2b).
  • the at least one semiconductor layer comprises a compound of formula (1) and a compound of formula (2), (2a) or (2b) and the hole transport layer comprises a compound of formula (2), (2a) or (2b), wherein the compound of formula (2), (2a) or (2b) are selected the same.
  • the thickness of the HTL may be in the range of about 5 nm to about 250 nm, preferably, about 10 nm to about 200 nm, further about 20 nm to about 190 nm, further about 40 nm to about 180 nm, further about 60 nm to about 170 nm, further about 80 nm to about 160 nm, further about 100 nm to about 160 nm, further about 120 nm to about 140 nm.
  • the HTL may have excellent hole transporting characteristics, without a substantial penalty in driving voltage.
  • an electron blocking layer is to prevent electrons from being transferred from an emission layer to the hole transport layer and thereby confine electrons to the emission layer. Thereby, efficiency, operating voltage and/or lifetime may be improved.
  • the electron blocking layer comprises a triarylamine compound.
  • the triarylamine compound may have a LUMO level closer to vacuum level than the LUMO level of the hole transport layer.
  • the electron blocking layer may have a HOMO level that is further away from vacuum level compared to the HOMO level of the hole transport layer.
  • the thickness of the electron blocking layer may be selected between 2 and 20 nm.
  • the electron blocking layer has a high triplet level, it may also be described as triplet control layer.
  • the function of the triplet control layer is to reduce quenching of triplets if a phosphorescent green or blue emission layer is used. Thereby, higher efficiency of light emission from a phosphorescent emission layer can be achieved.
  • the triplet control layer is selected from triarylamine compounds with a triplet level above the triplet level of the phosphorescent emitter in the adjacent emission layer. Suitable compounds for the triplet control layer, in particular the triarylamine compounds, are described in EP 2722 908 Al.
  • the photoactive layer converts an electrical current into photons or photons into an electrical current.
  • the PAL may be formed on the HTL by vacuum deposition, spin coating, slot-die coat ing, printing, casting, LB deposition, or the like.
  • the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the PAL.
  • the photoactive layer does not comprise the compound of Lormula
  • the photoactive layer may be a light-emitting layer or a light-absorbing layer.
  • Emission layer Emission layer
  • the EML may be formed on the HTL by vacuum deposition, spin coating, slot-die coat ing, printing, casting, LB deposition, or the like.
  • the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the EML.
  • the emission layer does not comprise the compound of Lormula
  • the emission layer may be formed of a combination of a host and an emitter dopant.
  • Example of the host are Alq3, 4,4'-N,N'-dicarbazole-biphenyl (CBP), poly(n- vinylcarbazole) (PVK), 9, 10-di(naphthalene-2-yl)anthracene (ADN), 4,4',4"-tris(carbazol-9-yl)- triphenylamine(TCTA), l,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBI), 3-tert-butyl- 9,10-di-2-naphthylanthracenee (TBADN), distyrylarylene (DSA) and bis(2-(2- hydroxyphenyl)benzo-thiazolate)zinc (Zn(BTZ)2).
  • CBP 4,4'-N,N'-dicarbazole-biphenyl
  • PVK poly(n-
  • the emitter dopant may be a phosphorescent or fluorescent emitter. Phosphorescent emitters and emitters which emit light via a thermally activated delayed fluorescence (TADF) mechanism may be preferred due to their higher efficiency.
  • the emitter may be a small molecule or a polymer.
  • red emitter dopants examples include PtOEP, Ir(piq)3, and Btp21r(acac), but are not limited thereto. These compounds are phosphorescent emitters; however, fluorescent red emitter dopants could also be used.
  • Examples of phosphorescent blue emitter dopants are F2Irpic, (F2ppy)2Ir(tmd) and Ir(dfppz)3 and ter-fluorene.
  • phosphorescent blue emitter dopants are F2Irpic, (F2ppy)2Ir(tmd) and Ir(dfppz)3 and ter-fluorene.
  • 4.4'-bis(4-diphenyl amiostyryl)biphenyl (DPAVBi), 2,5,8,11-tetra- tert-butyl perylene (TBPe) are examples of fluorescent blue emitter dopants.
  • the amount of the emitter dopant may be in the range from about 0.01 to about 50 parts by weight, based on 100 parts by weight of the host.
  • the emission layer may consist of a light-emitting polymer.
  • the EML may have a thickness of about 10 nm to about 100 nm, for example, from about 20 nm to about 60 nm. When the thickness of the EML is within this range, the EML may have excellent light emission, without a substantial penalty in driving voltage.
  • HBL Hole blocking layer
  • a hole blocking layer may be formed on the EML, by using vacuum deposition, spin coating, slot-die coating, printing, casting, LB deposition, or the like, in order to prevent the diffusion of holes into the ETL.
  • the HBL may have also a triplet exciton blocking function.
  • the HBL may also be named auxiliary ETL or a-ETL.
  • the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the HBL. Any compound that is commonly used to form a HBL may be used. Examples of compounds for forming the HBL include oxadiazole derivatives, triazole derivatives, phenanthroline derivatives and triazine derivatives.
  • the HBL may have a thickness in the range from about 5 nm to about 100 nm, for example, from about 10 nm to about 30 nm. When the thickness of the HBL is within this range, the HBL may have excellent hole-blocking properties, without a substantial penalty in driving voltage.
  • Electron transport layer ETL
  • the organic electronic device according to the present invention may further comprise an electron transport layer (ETL).
  • ETL electron transport layer
  • the electron transport layer may further comprise an azine compound, preferably a triazine compound.
  • the electron transport layer may further comprise a dopant selected from an alkali organic complex, preferably LiQ.
  • the thickness of the ETL may be in the range from about 15 nm to about 50 nm, for example, in the range from about 20 nm to about 40 nm. When the thickness of the EIL is within this range, the ETL may have satisfactory electron-injecting properties, without a substantial penalty in driving voltage.
  • the organic electronic device may further comprise a hole blocking layer and an electron transport layer, wherein the hole blocking layer and the electron transport layer comprise an azine compound.
  • the azine compound is a triazine compound.
  • Electron injection layer (EIL)
  • An optional EIL which may facilitate injection of electrons from the cathode, may be formed on the ETL, preferably directly on the electron transport layer.
  • materials for forming the EIL include lithium 8-hydroxyquinolinolate (LiQ), LiL, NaCl, CsL, Li20, BaO, Ca, Ba, Yb, Mg which are known in the art.
  • Deposition and coating conditions for forming the EIL are similar to those for formation of the HIL, although the deposition and coating conditions may vary, according to the material that is used to form the EIL.
  • the thickness of the EIL may be in the range from about 0.1 nm to about 10 nm, for example, in the range from about 0.5 nm to about 9 nm. When the thickness of the EIL is within this range, the EIL may have satisfactory electron- injecting properties, without a substantial penalty in driving voltage.
  • the cathode electrode also named cathode layer, is formed on the ETL or optional EIL.
  • the cathode electrode may be formed of a metal, an alloy, an electrically conductive compound, or a mixture thereof.
  • the cathode electrode may have a low work function.
  • the cathode electrode may be formed of lithium (Li), magnesium (Mg), aluminum (Al), aluminum (Al)-lithium (Li), calcium (Ca), barium (Ba), ytterbium (Yb), magnesium (Mg)-indium (In), magnesium (Mg)-silver (Ag), or the like.
  • the cathode electrode may be formed of a transparent conductive oxide, such as ITO or IZO.
  • the thickness of the cathode electrode may be in the range from about 5 nm to about 1000 nm, for example, in the range from about 10 nm to about 100 nm.
  • the cathode electrode may be transparent or semitransparent even if formed from a metal or metal alloy.
  • the cathode electrode is not part of an electron injection layer or the electron transport layer.
  • OLED Organic light-emitting diode
  • the organic electronic device according to the invention may be an organic light-emitting device.
  • an organic light- emitting diode comprising: a substrate; an anode electrode formed on the substrate; an semiconductor layer comprising compound of formula (1) , a hole transport layer, an emission layer, an electron transport layer and a cathode electrode.
  • an OLED comprising: a substrate; an anode electrode formed on the substrate; a semiconductor layer comprising a compound of Formula (1), a hole transport layer, an electron blocking layer, an emission layer, a hole blocking layer, an electron transport layer and a cathode electrode.
  • an OLED comprising: a substrate; an anode electrode formed on the substrate; a semiconductor layer comprising a compound of Formula (1), a hole transport layer, an electron blocking layer, an emission layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a cathode electrode.
  • OLEDs layers arranged between the above-mentioned layers, on the substrate or on the top electrode.
  • the OLED may comprise a layer structure of a substrate that is adjacent arranged to an anode electrode, the anode electrode is adjacent arranged to a first hole injection layer, the first hole injection layer is adjacent arranged to a first hole transport layer, the first hole transport layer is adjacent arranged to a first electron blocking layer, the first electron blocking layer is adjacent arranged to a first emission layer, the first emission layer is adjacent arranged to a first electron transport layer, the first electron transport layer is adjacent arranged to an n-type charge generation layer, the n-type charge generation layer is adjacent arranged to a hole generating layer, the hole generating layer is adjacent arranged to a second hole transport layer, the second hole transport layer is adjacent arranged to a second electron blocking layer, the second electron blocking layer is adjacent arranged to a second emission layer, between the second emission layer and the cathode electrode an optional electron transport layer and/or an optional injection layer are arranged.
  • the semiconductor layer according to the invention may be the first hole injection layer and p-type charge generation layer.
  • the OLED according to Fig. 2 may be formed by a process, wherein on a substrate (110), an anode (120), a hole injection layer (130), a hole transport layer (140), an electron blocking layer (145), an emission layer (150), a hole blocking layer (155), an electron transport layer (160), an electron injection layer (180) and the cathode electrode (190) are subsequently formed in that order.
  • the organic electronic device according to the invention may be a light emitting device, or a photovoltaic cell, and preferably a light emitting device. According to another aspect of the present invention, there is provided a method of manufacturing an organic electronic device, the method using:
  • At least one deposition source preferably two deposition sources and more preferred at least three deposition sources.
  • the methods for deposition that can be suitable comprise:
  • the processing is selected from spin-coating, printing, casting; and/or
  • OLED organic light-emitting diode
  • the semiconductor layer is formed by releasing the compound of Formula (1) according to the invention from the first deposition source and the covalent matrix compound or substantially covalent matrix compound from the second deposition source.
  • the method may further include forming on the anode electrode, at least one layer selected from the group consisting of forming a hole transport layer or forming a hole blocking layer, and an emission layer between the anode electrode and the first electron transport layer.
  • the method may further include the steps for forming an organic light-emitting diode (OLED), wherein
  • an emission layer is formed, - on the emission layer an electron transport layer is formed, optionally a hole blocking layer is formed on the emission layer,
  • a hole blocking layer is formed in that order between the first anode electrode and the emission layer
  • an electron injection layer is formed between the electron transport layer and the cathode electrode.
  • the OLED may have the following layer structure, wherein the layers having the following order: anode, semiconductor layer comprising a compound of Formula (1) according to the invention, first hole transport layer, second hole transport layer, emission layer, optional hole blocking layer, electron transport layer, optional electron injection layer, and cathode.
  • an electronic device comprising at least one organic light emitting device according to any embodiment described throughout this application, preferably, the electronic device comprises the organic light emitting diode in one of embodiments described throughout this application. More preferably, the electronic device is a display device.
  • FIG. 1 is a schematic sectional view of an organic electronic device, according to an exemplary embodiment of the present invention
  • FIG. 2 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention
  • FIG. 3 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention.
  • OLED organic light-emitting diode
  • FIG. 4 is a schematic sectional view of an organic light-emitting diode (OLED), according to an exemplary embodiment of the present invention
  • first element when a first element is referred to as being formed or disposed “on” or “onto” a second element, the first element can be disposed directly on the second element, or one or more other elements may be disposed there between.
  • first element when referred to as being formed or disposed "directly on” or “directly onto” a second element, no other elements are disposed there between.
  • FIG. 1 is a schematic sectional view of an organic electronic device 100, according to an exemplary embodiment of the present invention.
  • the organic electronic device 101 includes a substrate (110), an anode layer (120), a semiconductor layer according to the present invention (130), a photoactive layer (PAL) (151) and a cathode layer (190).
  • PAL photoactive layer
  • FIG. 2 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention.
  • the OLED 100 includes a substrate (110), an anode layer (120), a semiconductor layer according to the present invention (130), an emission layer (EML) (150) and a cathode layer (190).
  • FIG. 3 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention.
  • the OLED 100 includes a substrate (110), an anode layer (120), a semiconductor layer according to the present invention (130), a hole transport layer (HTL) (140), an emission layer (EML) (150), an electron transport layer (ETL) (160) and a cathode layer (190).
  • FIG. 4 is a schematic sectional view of an organic light-emitting diode (OLED) 100, according to an exemplary embodiment of the present invention.
  • the OLED 100 includes a substrate (110), an anode layer (120), a semiconductor layer according to the present invention (130), a hole transport layer (HTL) (140), an electron blocking layer (EBL) (145), an emission layer (EML) (150), a hole blocking layer (HBL) (155), an electron transport layer (ETL) (160), an optional electron injection layer (EIL) (180), and a cathode layer (190).
  • an organic electronic device 100 of the present invention is for example started with a substrate (110) onto which an anode layer (120) is formed, on the anode layer (120), a semiconductor layer comprising compound of Formula (I) (130), a photoactive layer (151) and a cathode electrode 190 are formed, exactly in that order or exactly the other way around.
  • an OLED 100 of the present invention is started with a substrate (110) onto which an anode layer (120) is formed, on the anode layer (120), a semiconductor layer comprising compound of Formula (I) (130), optional a hole transport layer (140), optional an electron blocking layer (145), an emission layer (150), optional a hole blocking layer (155), optional an electron transport layer (160), optional an electron injection layer (180), and a cathode electrode 190 are formed, exactly in that order or exactly the other way around.
  • a substrate (110) onto which an anode layer (120) is formed, on the anode layer (120), a semiconductor layer comprising compound of Formula (I) (130), optional a hole transport layer (140), optional an electron blocking layer (145), an emission layer (150), optional a hole blocking layer (155), optional an electron transport layer (160), optional an electron injection layer (180), and a cathode electrode 190 are formed, exactly in that order or exactly the other way around.
  • the semiconductor layer of the present invention (130) can be a hole injection layer.
  • a capping layer and/or a sealing layer may further be formed on the cathode electrodes 190, in order to seal the OLEDs 100.
  • various other modifications may be applied thereto.
  • the invention is furthermore illustrated by the following examples which are illustrative only and non-binding.
  • the compound may be prepared as described in the literature or alternative compounds may be prepared following similar compounds as described in the literature.
  • the sulfonamide ligands were synthesized by methods known in the literature.
  • the sulfonamide ligand was dissolved in MeOH (ca. 5ml/g) and 0.55 eq M2CO3 were added. The reaction mixture was stirred overnight at room temperature. Excess silver carbonate was filtered off and washed with a small amount of methanol. The liquid phases were combined and the solvent was removed under reduced pressure. The remaining solid was dried in high vacuum. The crude material was purified by recrystallization and/or precipitation.
  • the sulfonamide ligands were synthesized by methods known in the literature.
  • the sulfonamide ligand was dissolved in water (ca lOml/g) and 0.5 eq of Cu(OAc)2 was added. The mixture was stirred until a clear solution was obtained. The solvent was removed under reduced pressure. Residual acetic acid was removed by repeated adding of toluene and removal of the solvent under reduced pressure. The crude material was purified by recrystallization and/or precipitation.
  • the sulfonamide ligands were synthesized by methods known in the literature.
  • the sulfonamide ligand was dissolved in water (ca lOml/g) and 0.5 eq of Fe powder was added. The mixture was stirred until a solution was obtained. The solvent was removed under reduced pressure. Residual acetic acid was removed by repeated adding of toluene and removal of the solvent under reduced pressure. The crude material was purified by recrystallization and/or precipitation. HOMO and LUMP
  • the HOMO and LUMO energy levels of the matrix compounds are calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Düsseldorf, Germany).
  • the optimized geometries and the energy levels of the molecular structures are determined by applying the hybrid functional B3LYP with a 6-31G* basis set in the gas phase. If more than one conformation is viable, the conformation with the lowest total energy is selected.
  • the LUMO energy of the ligand was calculated for the charge- neutral ligand which was saturated with a proton bound to the nitrogen atom.
  • the rate onset temperature is determined by loading 100 mg compound into a VTE source.
  • VTE source a point source for organic materials may be used as supplied by Kurt J. Lesker Company (www.lesker.com) or CreaPhys GmbH (http://www.creaphys.com).
  • the VTE source is heated at a constant rate of 15 K/min at a pressure of less than 10 5 mbar and the temperature inside the source measured with a thermocouple. Evaporation of the compound is detected with a QCM detector which detects deposition of the compound on the quartz crystal of the detector. The deposition rate on the quartz crystal is measured in Angstrom per second. To determine the rate onset temperature, the deposition rate is plotted against the VTE source temperature. The rate onset is the temperature at which noticeable deposition on the QCM detector occurs. For accurate results, the VTE source is heated and cooled three time and only results from the second and third run are used to determine the rate onset temperature.
  • the rate onset temperature may be in the range of 200 to 255 °C. If the rate onset temperature is below 200 °C the evaporation may be too rapid and therefore difficult to control. If the rate onset temperature is above 255 °C the evaporation rate may be too low which may result in low tact time and decomposition of the organic compound in VTE source may occur due to prolonged exposure to elevated temperatures.
  • the rate onset temperature is an indirect measure of the volatility of a compound. The higher the rate onset temperature the lower is the volatility of a compound.
  • the ink formulation for comparative example 1 has the following composition: 0.86 wt.-% LiTFSI : F3 in anisole : benzonitrile (5:1).
  • the ink formulation for example 1 has the following composition: 0.88 wt.-%_MC-5 : F3 in anisole : benzonitrile (5:1).
  • the ink formulation for example 2 has the following composition: 2.29 wt.-%_MC-l : F3 in anisole : benzonitrile (5:1).
  • the ink formulation for example 3 has the following composition: 2.26 wt.-%_MC-2 : F3 in anisole : benzonitrile (5:1). To prepare the ink, solutions of 11 mg MC-2 in 2.4ml benzonitrile and of 151mg F3 in 4.2 ml anisol were prepared as described above. 0.8 ml benonitrile solution was added to the anisole solution and stirred as described above.
  • Example 1 to 3 For OLEDs, see Example 1 to 3, and comparative examples 1 in Table 3, a 15W /cm 2 glass substrate with 90 nm ITO (available from Corning Co.) with the dimensions 150 mm x 150 mm x 0.7 mm was ultrasonically washed with isopropyl alcohol for 5 minutes and then with pure water for 5 minutes and dried at elevated temperature, followed by plasma treatment in an atmosphere of 98- 99% nitrogen and 2-1% oxygen at a pressure of 7.5 mTorr at 100W for 35s-40s to prepare the anode layer.
  • ITO available from Corning Co.
  • the substrate is placed on a spin-coater with ITO side facing upwards and fixed with vacuum.
  • 5 ml of ink formulation is applied with a syringe with filter (PTFE - 0,45pm) on the substrate.
  • Spin coating parameter are 850 rpm (3sec ramp-up from zero tomaximum speed) for 30sec.
  • the resulting film is dried at 60°C for 1 minute on a hotplate.
  • Next step is the cleaning of the substrate around the active area (to ensure a good encapsulation process after evaporation). An additional bake-out at 100°C for 10 minutes on a hotplate is done.
  • LiTFSI CAS 90076-65-6
  • the composition of the hole injection layer can be seen in Table 3.
  • the substrate is transferred to a vacuum chamber.
  • Biphenyl-4-yl(9,9-diphenyl-9H-fluoren-2-yl)-[4-(9-phenyl-9H-carbazol-3-yl) phenyl] -amine was vacuum deposited on the HIL, to form a first HTL having a thickness of 89 nm.
  • N,N-di([l,r-biphenyl]-4-yl)-3'-(9H-carbazol-9-yl)-[l,r-biphenyl]-4-amine (CAS 1464822-27-2) was vacuum deposited on the HTL, to form an electron blocking layer (EBL) having a thickness of 5 nm.
  • EBL electron blocking layer
  • a hole blocking layer is formed with a thickness of 5 nm by depositing 2-(3'- (9,9-dimethyl-9H-fluoren-2-yl)-[l,r-biphenyl]-3-yl)-4,6-diphenyl-l,3,5-triazine on the emission layer.
  • the electron transporting layer having a thickness of 31 nm is formed on the hole blocking layer by depositing 4'-(4-(4-(4,6-diphenyl-l,3,5-triazin-2-yl)phenyl)naphthalen-l-yl)- [l,l'-biphenyl]-4-carbonitrile and LiQ in a ratio of 50:50 vol.-%.
  • an electron injection layer is formed having a thickness of 2 nm by depositing Yb onto the electron transport layer.
  • A1 is evaporated at a rate of 0.01 to 1 A/s at 10-7 mbar to form a cathode layer with a thickness of 100 nm onto the electron injection layer.
  • the OLED stack is protected from ambient conditions by encapsulation of the device with a glass slide. Thereby, a cavity is formed, which includes a getter material for further protection.
  • the current efficiency is measured at 20°C.
  • the current-voltage characteristic is determined using a Keithley 2635 source measure unit, by sourcing a voltage in V and measuring the current in mA flowing through the device under test. The voltage applied to the device is varied in steps of 0.1V in the range between 0V and 10V.
  • the luminance-voltage characteristics and CIE coordinates are determined by measuring the luminance in cd/m 2 using an Instrument Systems CAS-140CT array spectrometer (calibrated by Deutsche Ak relie für sstelle (DAkkS)) for each of the voltage values.
  • the light output of the device is measured using a calibrated photodiode at 15 mA/cm2.
  • Lifetime LT of the device is measured at ambient conditions (20°C) and 30 mA/cm 2 , using a Keithley 2400 sourcemeter, and recorded in hours.
  • the brightness of the device is measured using a calibrated photo diode.
  • the lifetime LT is defined as the time till the brightness of the device is reduced to 97 % of its initial value.
  • the compounds of formula (1) have a LUMO further away from vacuum level compared to comparative example 1.
  • a LUMO level of the ligand selected in the range of ⁇ 2 to > 3 eV may be beneficial for performance of organic electronic devices, in particular of an organic semiconductor layer comprising a compound of formula (1) and a covalent matrix compound or substantially covalent matrix compound.
  • Table 2 are shown the calculated HOMO levels for matrix compounds of formula (2) or (3). HOMO levels were calculated as described above.
  • the matrix compound of formula (2) or (3) have HOMO levels suitable for mass production of organic electronic devices.
  • the organic semiconductor layer comprises LiFTSI and substantially covalent matrix compound F2.
  • LiTFSI is free of a substituted or unsubstituted C2 to C20 heteroaryl.
  • the operating voltage is 4.35 V
  • the external quantum efficiency EQE is 10.4 %
  • the lifetime is 15 hours and the operating voltage rise over time is 13.5 V.
  • the organic semiconductor layer comprises compound of formula (1) MC-5.
  • MC-5 differs from LiTFSI in B 1 being 3-pyridyl.
  • the operating voltage is improved to 4.01 V
  • the EQE is improved to 11.6 %
  • the lifetime is improved to 18 hours
  • the voltage stability is improved to 2.4 V.
  • the organic semiconductor layer comprises compound of formula (1) MC-.
  • MC-1 differs from MC-5 in the metal cation and group B 1 .
  • the lifetime is improved to 24 hours and the voltage stability is improved to 1.6 V.
  • the organic semiconductor layer comprises compound of formula (1) MC-.
  • MC-2 differs from MC-1 in the metal cation.
  • the operating voltage is further improved to 4.00 V, the lifetime is substantially improved to 79 hours and the voltage stability is substantially improved to 0.2 V.
  • Low operating voltage may be beneficial for low power consumption and improved battery life, in particular in mobile devices.

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Abstract

La présente invention concerne un dispositif électronique organique comprenant une anode, une cathode, au moins une couche photoactive et au moins une couche semi-conductrice, l'au moins une couche semi-conductrice étant disposées entre l'anode et l'au moins une couche photoactive, et l'au moins une couche semi-conductrice comprenant un composé de matrice covalente ou un composé de matrice sensiblement covalente, l'HOMO calculé du composé à matrice covalente ou du composé à matrice sensiblement covalente étant dans la plage de < -4,5 eV et > 6,5 eV.
EP22737381.8A 2021-06-18 2022-06-15 Dispositif électronique organique comprenant un composé de formule (1), dispositif d'affichage comprenant le dispositif électronique organique et composés de formule (1) destinés à être utilisés dans des dispositifs électroniques organiques Pending EP4356443A1 (fr)

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EP21180311.9A EP4106025A1 (fr) 2021-06-18 2021-06-18 Dispositif électronique organique comprenant un composé de formule (1), dispositif d'affichage comprenant le dispositif électronique organique, ainsi que composés de formule (1) à utiliser dans des dispositifs électroniques organiques
PCT/EP2022/066276 WO2022263493A1 (fr) 2021-06-18 2022-06-15 Dispositif électronique organique comprenant un composé de formule (1), dispositif d'affichage comprenant le dispositif électronique organique et composés de formule (1) destinés à être utilisés dans des dispositifs électroniques organiques

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EP4356443A1 true EP4356443A1 (fr) 2024-04-24

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EP22737381.8A Pending EP4356443A1 (fr) 2021-06-18 2022-06-15 Dispositif électronique organique comprenant un composé de formule (1), dispositif d'affichage comprenant le dispositif électronique organique et composés de formule (1) destinés à être utilisés dans des dispositifs électroniques organiques

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EP (2) EP4106025A1 (fr)
KR (1) KR20240023031A (fr)
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EP2722908A1 (fr) 2012-10-17 2014-04-23 Novaled AG Diode électroluminescente organique phosphorescente et matières de transport de trous pour diodes électroluminescentes phosphorescentes
EP4084108A1 (fr) * 2015-08-18 2022-11-02 Novaled GmbH Amides métalliques destinés à être utilisés comme couche d'injection de trous pour une diode électroluminescente organique (delo)
EP3133664A1 (fr) * 2015-08-18 2017-02-22 Novaled GmbH Couche épaisse d'amine-triaryle dopée avec des amides métalliques pour utilisation comme une couche d'injection de trous pour une diode électroluminescente organique (oled)
DE102015121844A1 (de) * 2015-12-15 2017-06-22 Osram Oled Gmbh Organisches elektronisches Bauelement und Verwendung eines fluorierten Sulfonimid-Metallsalzes

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KR20240023031A (ko) 2024-02-20
EP4106025A1 (fr) 2022-12-21

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