EP4338288A1 - Ensemble commutateur à semi-conducteur ayant une fonction de surveillance, système d'énergie et véhicule - Google Patents

Ensemble commutateur à semi-conducteur ayant une fonction de surveillance, système d'énergie et véhicule

Info

Publication number
EP4338288A1
EP4338288A1 EP22725216.0A EP22725216A EP4338288A1 EP 4338288 A1 EP4338288 A1 EP 4338288A1 EP 22725216 A EP22725216 A EP 22725216A EP 4338288 A1 EP4338288 A1 EP 4338288A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor switch
connection
semiconductor
evaluation unit
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22725216.0A
Other languages
German (de)
English (en)
Inventor
Patrick Kaupp
Thomas SCHAEDLICH
Siegbert Sautter
Peter Kohn
Johannes Swoboda
Sebastian RUECK
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP4338288A1 publication Critical patent/EP4338288A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
    • G01R31/3277—Testing of circuit interrupters, switches or circuit-breakers of low voltage devices, e.g. domestic or industrial devices, such as motor protections, relays, rotation switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0009—AC switches, i.e. delivering AC power to a load

Definitions

  • the present invention relates to a semiconductor switch arrangement with a monitoring function, an energy system with such a semiconductor switch arrangement, and a vehicle with such an energy system.
  • Energy systems such as electric drive systems of electrically powered vehicles are known from the prior art, which include, for example, a traction battery and an electric drive motor.
  • electromechanical contactors are used, for example, which are monitored for fault conditions such as sticking and/or welding of electrical contacts by means of a diagnostic functionality.
  • diagnostic functionalities are used, for example, when opening the contactors. If an error state is determined in the process, it is accordingly possible to protect the electrical energy system by means of a suitable error reaction.
  • MOSFETs in a so-called “back-to-back” arrangement instead of contactors in order to connect and disconnect electrical energy sources and electrical consumers with one another.
  • US 2018/0238935 A1 describes a diagnostic device configured to diagnose abnormalities in a power supply input circuit and the like. - 2
  • US 2015/0316617 A1 describes a fault detection device that is set up to detect switching faults in at least one electronic switch, which can be used to separate a battery pack from an electrical consumer depending on an existing fault state.
  • a semiconductor switch arrangement with a monitoring function which has a first semiconductor switch, a second semiconductor switch, a resistor, an input connection, an output connection, a reference potential connection and an evaluation unit.
  • the first semiconductor switch and the second semiconductor switch preferably have an inverse diode (also called “body diode”) and are designed, for example, as MOSFETs, in particular as SiC MOSFETs and in particular as identical semiconductor switches.
  • the reference potential connection is, for example, a ground connection of the semiconductor switch arrangement.
  • the evaluation unit is designed, for example, as an ASIC, FPGA, processor, digital signal processor, microcontroller or the like.
  • the first semiconductor switch and the second semiconductor switch are connected in series between the input terminal and the output terminal such that a drain terminal of the first semiconductor switch is connected to the input terminal, a drain terminal of the second semiconductor switch is connected to the output terminal and a source terminal of the first semiconductor switch is connected to a source connection of the second semiconductor switch at a connection point of the two semiconductor switches.
  • Such an opposite arrangement of the semiconductor switches is also referred to as a "back-to-back" arrangement.
  • the two semiconductor switches are set up to enable and interrupt a current flow between the input connection and the output connection on the basis of activation by the evaluation unit.
  • the resistor is connected between the reference potential connection and the connection point of the first semiconductor switch and the second semiconductor switch.
  • the evaluation unit is set up, in a state in which the first semiconductor switch and the second semiconductor switch are open, to determine a short circuit in the first semiconductor switch if an input voltage between the input connection and the reference potential connection essentially corresponds to a voltage drop across the resistor (i.e. a common-source" voltage) and to determine a short circuit in the second semiconductor switch if an output voltage between the output terminal and the reference potential terminal essentially corresponds to a voltage drop across the resistor.
  • “Essentially” is to be understood here as adhering to a predefined maximum permissible deviation of the respective voltage values from one another, which results, for example, from measurement inaccuracies when measuring the respective voltages and/or from connections between the source and drain connections of the semiconductor switches in the ( short-circuit) error case.
  • the input voltage, the output voltage and the voltage across the resistor are determined, for example, by means of parallel-connected voltage dividers (measuring bridge), the tapped voltages of which are recorded by means of a measuring device and preferably by means of an A/D converter, the measuring device being connected to the evaluation unit in terms of information technology.
  • the measuring device also has a calibration function that makes it possible to compensate for deviations from nominal resistance values of the voltage dividers caused by manufacturing and/or aging and/or temperature, so that correspondingly highly accurate voltage measurements can be carried out.
  • the semiconductor switch arrangement according to the invention enables faulty semiconductor switches to be identified particularly reliably, as a result of which, among other things, the security of a system which uses such a semiconductor switch arrangement can be increased.
  • the evaluation unit it is possible for the evaluation unit to initiate a suitable error handling measure which, for example, involves subsequent closing of the non-faulty one in each case - 4
  • the evaluation unit may be composed of a first evaluation unit and a second evaluation unit, with the first evaluation unit being responsible for driving the semiconductor switches, while the second evaluation unit is responsible for monitoring the semiconductor switches.
  • the evaluation unit is set up to control the first semiconductor switch and the second semiconductor switch in such a way that a bidirectional or unidirectional current flow between the input connection and the output connection is made possible.
  • a unidirectional current flow can be achieved by only one of the two semiconductor switches being closed while the other of the two semiconductor switches remains open, so that a current flow in the forward direction of the inverse diode of the closed semiconductor switch is made possible.
  • the evaluation unit is set up to measure a current flowing between the input connection and the output connection and on the basis of an expected relationship between the measured current and a voltage - 5 to check compliance with respective setpoint switching states for the first semiconductor switch and the second semiconductor switch between the input terminal and the output terminal.
  • the voltage connection is determined, for example, from data sheets of the respective semiconductor switches and/or from measurements.
  • a switching state in which both semiconductor switches are open or closed in each case comes into consideration as a desired switching state.
  • a switching state in which one of the semiconductor switches is closed while the respective other semiconductor switch is open comes into consideration as the target switching state.
  • the different current/voltage relationships resulting from these combinations can be compared with current measured values by the evaluation unit in order to determine any deviations from the target switching states.
  • a series connection made up of a third semiconductor switch and a fourth semiconductor switch to be arranged in parallel with the series connection made up of the first semiconductor switch and the second semiconductor switch, the third semiconductor switch and the fourth semiconductor switch according to the first semiconductor switch and the second semiconductor switch between the input connection and the output terminal are connected.
  • the third semiconductor switch and the fourth semiconductor switch are preferably configured identically to the first semiconductor switch and to the second semiconductor switch.
  • a connection point of respective sources of the third semiconductor switch and the fourth semiconductor switch is connected to the connection point of the sources of the first semiconductor switch and the second semiconductor switch.
  • the evaluation unit is set up to jointly carry out short-circuit monitoring and setpoint switching state monitoring for the first semiconductor switch, the second semiconductor switch, the third semiconductor switch and the fourth semiconductor switch.
  • a current path containing the first semiconductor switch and the second semiconductor switch is a first current path of the semiconductor switch arrangement.
  • the semiconductor switch arrangement has at least one second current path, which differs from the first current path, between the input terminal and the output terminal with a series connection of a fifth semiconductor switch and a sixth semiconductor switch.
  • the resistor is a first resistor and a second resistor is connected between the reference potential connection and a connection point of the fifth semiconductor switch and the sixth semiconductor switch.
  • the evaluation unit is set up to carry out short-circuit monitoring and setpoint switching state monitoring for the fifth semiconductor switch and the sixth semiconductor switch on the basis of a voltage drop across the second resistor, which is determined by the evaluation unit independently of the voltage drop across the first resistor.
  • the evaluation unit is particularly advantageously set up to take into account a first predefined tolerance range for the expected current/voltage relationship when determining compliance with the respective target switching states for the semiconductor switches to be monitored, which applies when the semiconductor switches to be monitored are controlled in such a way that a bidirectional current flow between the input terminal and the output terminal is enabled and a second predefined tolerance range for the expected current/voltage relationship that applies when the semiconductor switches to be monitored are controlled in such a way that a unidirectional current flow between the input terminal and the output terminal is enabled.
  • the first and The second tolerance range is determined, for example, taking into account component tolerances and/or temperature dependencies and/or a number of parallel-connected series circuits of oppositely arranged semiconductor switches.
  • the two tolerance ranges additionally as a function of a maximum permitted number of faulty semiconductor switches, so that the tolerance ranges are also maintained if, for example, one or more of the semiconductor switches of the semiconductor switch arrangement according to the invention have a defect.
  • the evaluation unit is set up to calculate the first tolerance range and the second tolerance range as a function of the current paths used in each case and/or a number of parallel circuits of semiconductor switches used within a respective current path and/or a current which applies to the respective semiconductor switches. / Adjust temperature relationship and / or aging states of respective semiconductor switches. In this way, it can be ensured that currently applicable boundary conditions are taken into account when monitoring the semiconductor switches, as a result of which the reliability of the monitoring of the semiconductor switches is increased in particular.
  • the evaluation unit is preferably also set up to determine a type and/or an execution speed of an error reaction, which is initiated in response to a detected error state of at least one semiconductor switch, depending on the extent of a deviation from the first tolerance range and/or from the second tolerance range and/or a type of the existing error status (i.e. whether there is a short circuit and/or a deviation from a target switching status).
  • the semiconductor switch arrangement is also advantageously set up to switch voltages of up to 60 V, preferably up to 400 V and particularly preferably up to 1000 V.
  • an energy system which has a semiconductor switch arrangement as described above, a first electrical energy source, in particular 8 a first battery, which is connected between the input connection and the reference potential connection, so that an electrical voltage is present between the input connection and the reference potential connection and has an electrical consumer and/or a switchable second electrical energy source, in particular a second battery, which is connected between the output connection and is connected to the reference potential connection.
  • the evaluation unit of the semiconductor switch arrangement is set up to determine a short circuit in the first semiconductor switch on the basis of a voltage provided by the first electrical energy source.
  • the evaluation unit is set up to determine a short circuit in the second semiconductor switch after the electrical load has been disconnected from the first electrical energy source by the respective semiconductor switch, provided that the electrical load is set up to store electrical energy that has been consumed at least for a predefined determination period (e.g. B. due to a capacitive component in the electrical load) and / or to determine during a state in which the respective semiconductor switches are open and the second electrical energy source is connected.
  • a predefined determination period e.g. B. due to a capacitive component in the electrical load
  • a vehicle which has an energy system as described above, which is preferably an energy system of a drive train of the vehicle.
  • the vehicle is, for example, an electrically powered passenger car, an electrically powered truck, a hybrid vehicle, an electrically powered two-wheeler or a vehicle that differs from these.
  • the first source of electrical energy is, for example, a traction battery of the vehicle, while the electrical consumer is, for example, a drive motor of the vehicle.
  • FIG. 1 shows a circuit diagram of a semiconductor switch arrangement according to the invention
  • FIG. 2 shows an example of a first tolerance range and a second tolerance range of a semiconductor switch arrangement according to the invention.
  • FIG. 3 shows a circuit diagram of an energy system according to the invention.
  • Figure 1 shows a circuit diagram of a semiconductor switch arrangement according to the invention, the semiconductor switch arrangement having an input connection 20, an output connection 22, a ground connection 24, a first MOSFET S11, a second MOSFET S12 (which are each of the "normally open” type), a resistor 10 and has an evaluation unit 30, which is embodied here as a microcontroller.
  • the two MOSFETs S11, S12 form a logic switch S1 and are connected in series between the input terminal 20 and the output terminal 22 in such a way that their respective source terminals are connected to one another at a connection point 50 and their respective inverse diodes are correspondingly arranged anti-serially.
  • the evaluation unit 30 By electrically connecting the respective gate connections of the two MOSFETs S11, S12 to the evaluation unit 30, the evaluation unit 30 is able to control the two MOSFETs S11, S12 independently of one another, so that the MOSFETs S11, S12, as well as a combination of one closed and one open MOSFET S11, S12 is made possible.
  • the evaluation unit 30 Based on a measurement of an input voltage UE, a voltage US1 across the resistor 10, an output voltage UA and an output current IA, which flows via a current path 60 of the semiconductor switch arrangement, the evaluation unit 30 is set up, both short circuits and deviations from the target switching states in the MOSFETs S11, S12 to determine. For this purpose, current/voltage characteristic curves for the MOSFETs S11, S12 and information about a corresponding first tolerance range 70 10 and a second tolerance range 72 corresponding thereto are used by the evaluation unit 30 .
  • FIG. 2 shows an example of a first tolerance range 70 and a second tolerance range 72, which are used by an evaluation unit 30 according to the invention when monitoring semiconductor switches S11, S12 according to the invention.
  • the two tolerance ranges 70, 72 are each specified taking into account component tolerances and current/temperature dependencies of the semiconductor switches S11, S12. Depending on the direction of a current voltage drop across a switch S1 formed by the semiconductor switches S11, S12 and/or the respective switching states of the semiconductor switches S11, S12, the tolerance ranges 70, 72 shown in Figure 2 of the first quadrant or the third quadrant of the coordinate system shown are to be applied .
  • the first tolerance range 70 is to be used in each case in those cases in which both semiconductor switches S11, S12 are closed, which represents a first switching state 100 of the switch S1.
  • the second tolerance range 72 shown in the first quadrant is to be used when the first semiconductor switch S11 is closed and the second semiconductor switch S12 is open, which represents a second switching state 102 of the switch S1.
  • the second tolerance range 72 shown in the third quadrant is to be used in each case when the first semiconductor switch S11 is open and the second semiconductor switch S12 is closed, which represents a third switching state 104 of the switch S1. All areas deviating from this represent error states 106 of the switch S1.
  • the extent of a deviation from the tolerance ranges 70, 72 is advantageously taken into account when determining a type and an execution speed of an error response given an existing error state.
  • FIG. 3 shows a circuit diagram of an energy system according to the invention, which represents an extension of the semiconductor switch arrangement shown in FIG. In order to avoid repetition, only differences from FIG. 1 are explained below. 11
  • the semiconductor switch arrangement of the energy system has a first switch S1, which is composed here of three parallel series circuits of oppositely arranged semiconductor switches S11, S12, S13, S14, S15, S16. In this way it is possible to switch correspondingly high currents. In this case, the semiconductor switches S11, S13 and S15 are always driven identically and the semiconductor switches S12, S14 and S16 are also always driven identically. All of the current paths running through the first switch S1 form a first current path 60 here.
  • the semiconductor switch arrangement additionally has a second switch S2, which forms a second current path 62 and which has two semiconductor switches S21, S22, which are arranged in the switch S1 analogously to the semiconductor switches S11, S12.
  • the second switch S2 is connected between the input connection 20 and a second output connection 26 of the semiconductor switch arrangement.
  • a third switch S3, which is constructed analogously to switch S2 is connected between the second output connection 26 and the first output connection 22 of the semiconductor switch arrangement.
  • a connection point of the semiconductor switches S21 , S22 of the second switch S2 is connected to the ground connection 24 via a second resistor 12 and a connection point of the semiconductor switches of the third switch S3 is connected to the ground connection 24 via a third resistor 14 .
  • the energy system has a first battery 80 which provides a voltage of 48 V and which is connected between the input connection 20 and the ground connection 24 of the semiconductor switch arrangement.
  • the energy system has an electrical load 90 which has a capacitance and which is connected between the first output connection 22 and the ground connection 24 of the semiconductor switch arrangement.
  • the energy system has a second battery 85, which provides a voltage of 12 V and which is connected via a DC/DC converter between the second output connection 26 and the ground connection 24 of the semiconductor switch arrangement.
  • the energy system is set up by means of the switch S1 to connect the first battery 80 to the electrical load 90 and to electrically separate the two components from one another, for example in an error state and/or idle state.
  • the energy system is set up by means of the switch S3 to provide a pre-charging current limited via the DC/DC converter 95 for charging the capacity of the electrical consumer 90 by means of the second battery when the switches S1 and the switch S2 are open.
  • the energy system is set up by means of the switch S2 to charge the second battery 85 via the first battery 80 when the switch S1 is open and when the switch S3 is open, or vice versa.
  • first tolerance ranges 70 and second tolerance ranges 72 adapted as a function of active current paths 60, 62, 64 are used for checking the setpoint switching states.
  • evaluation unit 30 which controls the short-circuit monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)

Abstract

L'invention concerne un ensemble commutateur à semi-conducteur, un système d'énergie et un véhicule. L'ensemble commutateur à semi-conducteur comprend un premier commutateur à semi-conducteur (S11), un deuxième commutateur à semi-conducteur (S12), une résistance (10), une borne d'entrée (20), une borne de sortie (22), une borne de potentiel de référence (24), et une unité d'analyse (30), le premier commutateur à semi-conducteur (S11) et le deuxième commutateur à semi-conducteur (S12) étant connectés en série entre la borne d'entrée (20) et la borne de sortie (22) et étant conçus pour permettre et empêcher un courant de circuler entre la borne d'entrée (20) et la borne de sortie (22) sur la base d'une opération de déclenchement par l'unité d'analyse (30). La résistance (10) est connectée entre la borne de potentiel de référence (24) et un point de connexion (50) entre le premier commutateur à semi-conducteur (S11) et le deuxième commutateur à semi-conducteur (S12). L'unité d'analyse (30) est configurée pour déterminer, dans l'état éteint des deux commutateurs à semi-conducteur, un court-circuit dans le premier commutateur à semi-conducteur (S11) lorsqu'une tension d'entrée (UE) entre la borne d'entrée (20) et la borne de potentiel de référence (24) correspond à une chute de tension (U10) sur la résistance (10), et un court-circuit dans le deuxième commutateur à semi-conducteur (S12) lorsqu'une tension de sortie (UA) entre la borne de sortie (22) et la borne de potentiel de référence (24) correspond à une chute de tension (U10) sur la résistance (10).
EP22725216.0A 2021-05-11 2022-04-25 Ensemble commutateur à semi-conducteur ayant une fonction de surveillance, système d'énergie et véhicule Pending EP4338288A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021204766.1A DE102021204766A1 (de) 2021-05-11 2021-05-11 Halbleiterschalteranordnung mit Überwachungsfunktion, Energiesystem und Fahrzeug
PCT/EP2022/060805 WO2022238094A1 (fr) 2021-05-11 2022-04-25 Ensemble commutateur à semi-conducteur ayant une fonction de surveillance, système d'énergie et véhicule

Publications (1)

Publication Number Publication Date
EP4338288A1 true EP4338288A1 (fr) 2024-03-20

Family

ID=82156819

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22725216.0A Pending EP4338288A1 (fr) 2021-05-11 2022-04-25 Ensemble commutateur à semi-conducteur ayant une fonction de surveillance, système d'énergie et véhicule

Country Status (5)

Country Link
US (1) US20240241170A1 (fr)
EP (1) EP4338288A1 (fr)
CN (1) CN117321918A (fr)
DE (1) DE102021204766A1 (fr)
WO (1) WO2022238094A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022212396B4 (de) 2022-11-21 2024-08-08 Vitesco Technologies GmbH Trennschaltung, Bordnetzsystem mit einer Trennschaltung und Verfahren zum Testen einer Trennschaltung
DE102023200279A1 (de) 2023-01-16 2024-07-18 Robert Bosch Gesellschaft mit beschränkter Haftung Schaltungsanordnung zur Überwachung eines Schalters

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005061215B4 (de) 2005-12-21 2019-06-06 Lucas Automotive Gmbh Motorsteuerungsschaltung mit Fehlerüberwachung
JP5311233B2 (ja) * 2010-12-27 2013-10-09 株式会社デンソー モータ制御装置、および、これを用いた電動パワーステアリング装置
JP5910172B2 (ja) 2012-03-01 2016-04-27 株式会社Ｇｓユアサ スイッチ故障診断装置、電池パックおよびスイッチ故障診断プログラム、スイッチ故障診断方法
DE202016006083U1 (de) 2016-09-30 2018-01-03 WAGO Verwaltungsgesellschaft mit beschränkter Haftung Parallel geschaltete Halbleiterschalter zur redundanten Stromversorgung und Unterbrechung
JP6683152B2 (ja) 2017-02-23 2020-04-15 株式会社デンソー 異常診断装置
DE102019205801A1 (de) * 2019-04-23 2020-10-29 Robert Bosch Gmbh Trennschalter

Also Published As

Publication number Publication date
US20240241170A1 (en) 2024-07-18
DE102021204766A1 (de) 2022-11-17
WO2022238094A1 (fr) 2022-11-17
CN117321918A (zh) 2023-12-29

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