EP4194991A4 - TRANSIENT AMPLIFICATION CIRCUIT FOR LDO, CHIP SYSTEM AND DEVICE - Google Patents

TRANSIENT AMPLIFICATION CIRCUIT FOR LDO, CHIP SYSTEM AND DEVICE Download PDF

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Publication number
EP4194991A4
EP4194991A4 EP20950683.1A EP20950683A EP4194991A4 EP 4194991 A4 EP4194991 A4 EP 4194991A4 EP 20950683 A EP20950683 A EP 20950683A EP 4194991 A4 EP4194991 A4 EP 4194991A4
Authority
EP
European Patent Office
Prior art keywords
ldo
boost circuit
chip system
transient boost
transient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20950683.1A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP4194991A1 (en
Inventor
Yunan SHI
Furong XIONG
Xi QU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of EP4194991A1 publication Critical patent/EP4194991A1/en
Publication of EP4194991A4 publication Critical patent/EP4194991A4/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
EP20950683.1A 2020-08-26 2020-08-26 TRANSIENT AMPLIFICATION CIRCUIT FOR LDO, CHIP SYSTEM AND DEVICE Pending EP4194991A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/111524 WO2022041011A1 (zh) 2020-08-26 2020-08-26 一种用于ldo的瞬态提升电路、芯片系统及设备

Publications (2)

Publication Number Publication Date
EP4194991A1 EP4194991A1 (en) 2023-06-14
EP4194991A4 true EP4194991A4 (en) 2023-09-27

Family

ID=80352315

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20950683.1A Pending EP4194991A4 (en) 2020-08-26 2020-08-26 TRANSIENT AMPLIFICATION CIRCUIT FOR LDO, CHIP SYSTEM AND DEVICE

Country Status (3)

Country Link
EP (1) EP4194991A4 (zh)
CN (1) CN115668092A (zh)
WO (1) WO2022041011A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115525087B (zh) * 2022-03-29 2023-06-27 南京市智凌芯科技股份有限公司 一种快速响应低压差线性稳压器
CN117707269B (zh) * 2023-11-23 2024-07-30 深圳列拓科技有限公司 一种自适应负载的低功耗低压差线性稳压器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101048205B1 (ko) * 2002-07-31 2011-07-08 페어차일드 세미컨덕터 코포레이션 집적된 전압 조정기를 위한 용량 결합 전류 부스트 회로
US20170242449A1 (en) * 2016-02-22 2017-08-24 Mediatek Singapore Pte. Ltd. Low-dropout linear regulator
US10545523B1 (en) * 2018-10-25 2020-01-28 Qualcomm Incorporated Adaptive gate-biased field effect transistor for low-dropout regulator
DE102018129910A1 (de) * 2018-11-27 2020-05-28 Intel Corporation Konzept für einen gepufferten umgedrehten Spannungsfolger und für einen Spannungsregler mit niedrigem Dropout

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7221213B2 (en) * 2005-08-08 2007-05-22 Aimtron Technology Corp. Voltage regulator with prevention from overvoltage at load transients
CN102722207B (zh) * 2012-05-28 2014-08-20 华为技术有限公司 一种低压差线性稳压器
CN107102666A (zh) * 2016-02-22 2017-08-29 联发科技（新加坡）私人有限公司 低压差线性稳压器
CN106774580B (zh) * 2017-01-19 2018-06-22 武汉众为信息技术有限公司 一种快速瞬态响应高电源抑制比的ldo电路
CN110162130B (zh) * 2019-05-08 2020-06-02 宁波大学 一种电源抑制比和瞬态响应增强的ldo电路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101048205B1 (ko) * 2002-07-31 2011-07-08 페어차일드 세미컨덕터 코포레이션 집적된 전압 조정기를 위한 용량 결합 전류 부스트 회로
US20170242449A1 (en) * 2016-02-22 2017-08-24 Mediatek Singapore Pte. Ltd. Low-dropout linear regulator
US10545523B1 (en) * 2018-10-25 2020-01-28 Qualcomm Incorporated Adaptive gate-biased field effect transistor for low-dropout regulator
DE102018129910A1 (de) * 2018-11-27 2020-05-28 Intel Corporation Konzept für einen gepufferten umgedrehten Spannungsfolger und für einen Spannungsregler mit niedrigem Dropout

Also Published As

Publication number Publication date
EP4194991A1 (en) 2023-06-14
WO2022041011A1 (zh) 2022-03-03
CN115668092A (zh) 2023-01-31

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