EP4169081A1 - Transparent resonant-tunneling diode and method for producing same - Google Patents
Transparent resonant-tunneling diode and method for producing sameInfo
- Publication number
- EP4169081A1 EP4169081A1 EP21734802.8A EP21734802A EP4169081A1 EP 4169081 A1 EP4169081 A1 EP 4169081A1 EP 21734802 A EP21734802 A EP 21734802A EP 4169081 A1 EP4169081 A1 EP 4169081A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- oxide layer
- transition metal
- metal oxide
- tunnel diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000005546 reactive sputtering Methods 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 46
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 16
- 238000011161 development Methods 0.000 description 11
- 230000018109 developmental process Effects 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000003624 transition metals Chemical group 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000013528 artificial neural network Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 nitride compounds Chemical class 0.000 description 2
- 239000004984 smart glass Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- IBYSTTGVDIFUAY-UHFFFAOYSA-N vanadium monoxide Chemical compound [V]=O IBYSTTGVDIFUAY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/01—Manufacture or treatment
Definitions
- the invention relates to a resonant tunnel diode comprising an electrically insulating substrate, a metal layer and a transition metal oxide layer.
- the invention also relates to a method for producing the resonant tunnel diode.
- a tunnel diode is a semiconductor component which, due to the quantum mechanical effect of tunneling, shows a current-voltage characteristic that has a negative differential resistance in one area. In this area, an increase in the voltage does not lead to an increase in the current intensity, as is usual for normal diodes, but to a decrease in the current intensity.
- a resonant tunnel diode enables this behavior in that the potential distribution of the resonant tunnel diode has several potential barriers which the electrodes must tunnel through in order to generate an electrical current.
- the probability of tunneling depends on the level of the quantized energy state between the tunnel barriers, which results in the negative differential resistance.
- resonant tunnel diodes have a complex structure with several layers made of different materials. Some tunnel diodes are made from an n-doped germanium or gallium arsenide layer into which a smaller layer of indium is alloyed. Due to the complex layer structure, the production of resonant tunnel diodes is complex.
- the US Pat. No. 10,600,961 B2 describes a threshold value switching device based on vanadium dioxide (VO2), which has a current-controlled negative differential resistance, and a manufacturing method for the threshold value switching device.
- VO2 vanadium dioxide
- the US Pat. No. 6,534,784 B2 describes an electron tunneling device, whereby two layers are used to transport electrons between two non-insulating layers mutually different metal oxide layers are formed between the two non-insulating layers.
- a further object of the invention is to provide a method by means of which a resonant tunnel diode can be produced without great effort.
- a resonant tunnel diode comprising an electrically insulating substrate, a metal layer and a transition metal oxide layer is thus provided, the metal layer being applied to the substrate and the transition metal oxide layer being applied to the metal layer, and the metal layer and the transition metal oxide layer having an amorphous structure .
- a key aspect of the invention is that the metal layer and the transition metal oxide layer have an amorphous structure.
- Resonant tunnel diodes generally have complex structures with at least three layers that are applied to the substrate. In the present invention, however, only two layers, namely the metal layer and the transition metal oxide layer, are applied to the substrate. Because the metal layer and the transition metal oxide layer are amorphous in their structure, the present invention succeeds with only two layers that are applied the electrically insulating substrate are applied to show a current-voltage characteristic of a resonant tunnel diode. The structure of the resonant tunnel diode is thus greatly simplified, so that the production of the resonant tunnel diode is also less complex.
- a layer is understood to be a three-dimensional object, the extent of which in a two-dimensional area is many times greater than its extent perpendicular to it.
- the metal atoms in the metal layer are preferably in the zero oxidation state.
- the metal layer thus preferably exhibits metallic properties such as electrical conductivity and thermal conductivity.
- a transition metal oxide is understood to mean a compound of a transition metal with oxygen.
- a resonant tunnel diode is understood to mean a semiconductor component whose current-voltage characteristic has at least one region with a negative differential resistance.
- the resonant tunnel diode thus comprises the electrically insulating substrate, the metal layer and the transition metal oxide layer.
- the substrate preferably provides at least one two-dimensional surface to which the metal layer and transition metal oxide layer are applied.
- the two-dimensional surface can be a flat surface or it can also be curved.
- the metal layer is preferably applied to the substrate in such a way that the substrate is covered flat by the metal layer.
- the transition metal oxide layer is applied to the metal layer.
- the transition metal oxide layer is preferably also applied to the metal layer in such a way that the metal layer is covered flatly by the transition metal oxide layer.
- the resonant tunnel diode has a structure in which the metal layer is located between the electrically insulating substrate and the transition metal oxide layer. With the exception of the metal layer, there are preferably no further layers between the substrate and the transition metal oxide layer.
- the metal layer and the transition metal oxide layer have an amorphous structure. This means the atoms in the metal layer and the atoms in the transition metal oxide layer have no long-range order, in particular no translational symmetry as in a crystalline layer.
- the structural state of the metal layer and / or the transition metal oxide layer can preferably be determined by means of transmission electron microscopy and / or X-ray diffractometry with grazing incidence.
- the resonant tunnel diode according to the invention is particularly suitable for use in self-tunable switches, high-speed oscillators, memory cells and / or logic circuits.
- a layer thickness of the metal layer is between 10 nm and 25 nm and / or a layer thickness of the transition metal oxide layer is between 15 nm and 50 nm.
- the layer thickness of the metal layer is preferably 20 nm +/- 2 nm and the layer thickness of the transition metal oxide layer 40 nm +/- 2 nm.
- the layer thickness is preferably the extent of the layer parallel to the surface normal of the two-dimensional surface provided by the substrate.
- an optical transmittance through the metal layer and the transition metal oxide layer perpendicular to the layers is> 50%.
- the optical transmittance is a quantity for the permeability of the metal layer and the transition metal oxide layer for light waves and indicates how great the intensity of the light wave after passing through the two layers is compared to the output intensity of the light wave.
- the optical transmission for light with a wavelength between 420 nm and 750 nm is preferably> 50%, particularly preferably> 55%.
- the resonant tunnel diode has the advantage that it can be used as a component in photonic systems in which optical methods and technologies are used for transmission, storage and processing of information can be used.
- the resonant tunnel diode is particularly suitable as a component in optical neural networks in which neural networks are implemented using optical circuits.
- the transparent, resonant tunnel diode is particularly suitable for transparent, self-tuning switches, high-speed oscillators, memory cells and / or logic circuits in displays, optical communication systems, smart windows and / or smart glass. Optically transparent switches are essential for such applications.
- the metal layer and the transition metal oxide layer basically different metals and transition metal oxides can be used.
- the metal layer is an aluminum layer and / or the transition metal oxide layer is a vanadium (V) oxide layer.
- V vanadium
- the layer structure described shows a current-voltage characteristic of a resonant tunnel diode even at room temperature.
- Vanadium (V) oxide also known as vanadium pentoxide, is a stable vanadium-oxygen compound with the ratio formula V2O5. Due to the stability of the material, the resonant tunnel diode is not susceptible to oxidation and is therefore very robust and durable.
- the layer made of the transition metal oxide V2O5 can comprise small proportions of intrinsic oxide impurities.
- the minor oxidation states can be VO2, V2O3 or other typical vanadium-containing oxide phases.
- the purity of the V2O5 in the vanadium (V) oxide layer can vary between 90% and greater than 99%.
- the metal layer can consist of combinations or composites of the following elements or compounds: Pt, Pd, Cu, Ni, Mo, Ta, W and / or Si. Furthermore, TiN, TaN and / or WN can be used as materials for the metal layer. Although the metal in these nitride compounds is not in the zero oxidation state, these materials have metallic properties and are therefore suitable as a material for the metal layer.
- the substrate is an electrically insulating, i.e. a non-electrically conductive substrate. This preferably means that the electrical conductivity of the substrate is less than 10 8 S cm 1 .
- the substrate is optically transparent and / or the substrate is made of glass and / or a polymer.
- the resonant tunnel diode is optically transparent.
- the resonant tunnel diode preferably has an optical transmission of> 50%, the optical transmission particularly preferably being perpendicular to the layers, i.e. parallel to the surface normal of the two-dimensional surface provided by the substrate, at a wavelength between 420 nm and 750 nm> 50%.
- the substrate is preferably made of quartz glass or of the polymer polyimide.
- the resonant tunnel diode comprises two electrodes, the electrodes being applied to the transition metal oxide layer at a distance from one another.
- the electrodes can in principle consist of any material with good electrical conductivity. However, it is preferably provided that the electrodes are made of gold, silver, platinum, copper, indium tin oxide (ITO) and / or OFHC copper or of alloys and / or composites made of these materials.
- OFHC copper is an alloy made of copper that has a high thermal conductivity and preferably has an oxygen content below 0.001%.
- the electrodes made of indium tin oxide are particularly preferred, since this material has the advantage that it can be used to provide optically transparent electrodes. In this way, the optical transmission of the resonant tunnel diode and / or the metal layer and transition metal oxide layer can be maintained.
- the electrodes are applied to the transition metal oxide layer by means of a lithographic process, there being a flat, physical contact between the transition metal oxide layer and the electrode.
- the electrodes can be used as measuring tips be brought into physical contact with the transition metal oxide layer.
- the formulation that the electrodes are spaced from one another preferably means in the present case that the two electrodes are not in physical contact with one another on the transition metal oxide layer. For example, a distance between the electrodes can be a few nanometers to several centimeters.
- a further preferred development of the invention provides that when a voltage is applied to the electrodes, the resonant tunnel diode has a current-voltage characteristic with at least one negative differential resistance at room temperature. This means that when the current intensity is graphically plotted against the voltage, the current-voltage characteristic has at least one area in which the current intensity decreases despite the increasing voltage. In this sense, room temperature means a temperature between 0 ° C and 40 ° C.
- the method provides that the metal layer is applied by means of direct sputtering and the transition metal oxide layer is applied by means of reactive sputtering.
- Sputtering also known as cathode atomization
- a material source is converted into the gas phase by bombarding it with high-energy ions, i.e. it is atomized, in order to then be deposited as a layer on the substrate.
- a plasma is preferably ignited in a vacuum chamber by applying a voltage between a cathode and an anode.
- the ions which are mainly accelerated in the cathode case, can knock atoms out of the surface of the material source due to their high kinetic energy when they hit the material source and thus atomize the material source.
- Reactive sputtering is when one or more reactive gases, for example oxygen and / or nitrogen, are added to an inert working gas. The reactive gases react with the atomized material source and form new materials, which are then deposited as a layer on the substrate.
- the method according to the invention provides that the electrically insulating substrate is provided.
- the metal layer is applied using direct sputtering. The metal layer is applied to the substrate in such a way that an amorphous structure of the metal layer is formed.
- the transition metal oxide layer is applied to the metal layer by means of reactive sputtering. The transition metal oxide layer is also applied to the metal layer in such a way that the transition metal oxide layer has an amorphous structure. The method thus enables the layer structure of the resonant tunnel diode to be produced in a simple and robust manner.
- step b) and / or step c) is carried out at room temperature.
- room temperature means a temperature between 0 ° C and 40 ° C.
- the metal layer is an aluminum layer and is applied in step b) in an inert working gas with an applied power of 15 W to 30 W.
- the inert working gas is preferably argon with a purity of 99.998%. More preferably, the applied power is 25 W +/- 3 W. It has been shown that under these conditions, an amorphous aluminum layer can be produced particularly well and reliably on the substrate. More preferably, the layer thickness can be controlled over the duration of the coating process.
- the transition metal oxide layer is a vanadium (V) oxide layer and, in step c), an oxygen content in an inert working gas between 33% V / V and 67% V / V and / or the vanadium (V) oxide layer is applied to the metal layer with an applied power between 35 W and 45 W.
- the inert working gas is preferably argon. It has been shown that with an oxygen content of preferably 35% V / V and the power of 35 W to 40 W, an amorphous vanadium (V) oxide layer can be produced particularly well and reliably on the metal layer and particularly preferably on the aluminum layer.
- step b), i.e. the coating of the substrate with the metal layer and step c), i.e. the coating of the metal layer with the transition metal oxide layer, take place one after the other without the metal layer applied to the substrate being exposed to an oxygen-containing atmosphere in the meantime .
- the method additionally includes the following step: d) Lithographic application of two electrodes spaced apart from one another on the transition metal oxide layer.
- the electrodes are therefore preferably applied to the transition metal oxide layer by means of the lithographic method.
- This preferably includes producing a lithographic mask comprising open mask areas on the transition metal oxide layer.
- the lithographic mask is more preferably produced by applying a photosensitive photoresist to the transition metal oxide layer and using an exposure process to transfer an image of the lithographic mask onto the photosensitive photoresist.
- the exposed areas of the photoresist are preferably dissolved or, alternatively, the unexposed areas of the photoresist are dissolved in order to produce the lithographic mask in this way.
- Electrode material is then preferably introduced into the open mask areas of the lithographic mask in order to apply the electrodes to the transition metal oxide layer.
- FIG. 1 shows a schematic representation in two views of a transparent resonant tunnel diode according to a preferred exemplary embodiment of the invention
- Fig. 2 shows a current-voltage characteristic of the transparent resonant
- FIGS. 1 and lb) are schematically an exploded view and in Figure lb) is a schematic sectional view of a transparent resonant tunnel diode 10, according to a preferred embodiment of the invention can be seen.
- the resonant tunnel diode 10 comprises an electrically insulating substrate 12, a metal layer 14 and a transition metal oxide layer 16.
- the substrate 12 is a glass substrate 12
- the metal layer 14 is an aluminum layer 14
- the transition metal oxide layer 16 is a vanadium (V) oxide layer 16 with the ratio formula V2O5.
- the metal layer 14 and the transition metal oxide layer 16 are amorphous in their structure, that is to say the atoms have no long-range order. It can be seen from FIGS.
- a layer thickness 20 of the metal layer is 1420 nm and a layer thickness 22 of the transition metal oxide layer is 40 nm, the information on the layer thicknesses 20 and 22 each referring to an extension perpendicular to the flat surface 18 or parallel to the surface normal of the surface 18.
- the metal layer 14 was produced with direct sputtering and the transition metal oxide layer 16 with reactive sputtering, the direct sputtering as well as the reactive sputtering at room temperature, in the present case 20 ° C., being carried out in direct succession.
- the coating of the substrate 12 with the metal layer 14 was carried out in an inert atmosphere under argon gas with a purity of 99.998%. Furthermore, an electrical power of 25 W was applied between the cathode and anode.
- the oxygen content in the argon gas was 33% v / v. In this step, an electrical power of 40 W was applied between the cathode and anode, the metal layer not being exposed to an oxygen-containing atmosphere before it was coated with the transition metal oxide layer 16.
- the resonant tunnel diode 10 is optically transparent.
- the resonant tunnel diode 10 has an optical transmission of 55% for light 24 with a wavelength of 532 nm. This means that an intensity L of the light 24 after passing through the resonant tunnel diode 10 perpendicular to the surface 18 is still 55% of the initial intensity Io.
- FIG. 2 shows a current-voltage characteristic 26 of the transparent resonant tunnel diode 10 from FIG. 1 during a sheet resistance measurement.
- two electrodes (not shown) were physically brought into contact with the transition metal oxide layer 16 as measuring tips. There was a distance of 0.5 cm between the measuring tips of the electrodes.
- a voltage was applied to the electrodes and the current flowing between the electrodes was recorded.
- the applied voltage is plotted on the X-axis 28 in volts and the current flow on the Y-axis 30 is given in milliamperes.
- the current-voltage characteristic 26 shows an area with a negative differential resistance 32 at approximately 4.5 to 5 V. In this area, the current flow drops despite the increasing voltage.
- the current-voltage characteristic 26 was determined with a “Semiconductor Characterization System” measuring device (model: Keithley SCS-4200) at room temperature (20 ° C.).
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102020116068.2A DE102020116068A1 (en) | 2020-06-18 | 2020-06-18 | Transparent resonant tunnel diode and process for its manufacture |
PCT/EP2021/066581 WO2021255236A1 (en) | 2020-06-18 | 2021-06-18 | Transparent resonant-tunneling diode and method for producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
EP4169081A1 true EP4169081A1 (en) | 2023-04-26 |
Family
ID=76624038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP21734802.8A Pending EP4169081A1 (en) | 2020-06-18 | 2021-06-18 | Transparent resonant-tunneling diode and method for producing same |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP4169081A1 (en) |
DE (1) | DE102020116068A1 (en) |
WO (1) | WO2021255236A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534784B2 (en) | 2001-05-21 | 2003-03-18 | The Regents Of The University Of Colorado | Metal-oxide electron tunneling device for solar energy conversion |
US20140302310A1 (en) | 2011-03-18 | 2014-10-09 | The State of Oregon Acting by and Through the State Board of Higher Education on Behalf of Or... | Amorphous multi-component metal/metal oxide nanolaminate metamaterials and devices based thereon |
JP6415956B2 (en) * | 2014-12-09 | 2018-10-31 | 東芝メモリ株式会社 | Semiconductor memory device and control method thereof |
US10672898B2 (en) | 2016-07-07 | 2020-06-02 | Amorphyx, Incorporated | Amorphous metal hot electron transistor |
US10600961B2 (en) | 2017-07-27 | 2020-03-24 | Hrl Laboratories, Llc | Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance |
-
2020
- 2020-06-18 DE DE102020116068.2A patent/DE102020116068A1/en active Pending
-
2021
- 2021-06-18 WO PCT/EP2021/066581 patent/WO2021255236A1/en unknown
- 2021-06-18 EP EP21734802.8A patent/EP4169081A1/en active Pending
Also Published As
Publication number | Publication date |
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DE102020116068A1 (en) | 2021-12-23 |
WO2021255236A1 (en) | 2021-12-23 |
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