EP4136665A1 - Circuit d'adaptation d'impédance et système de fourniture de plasma et procédé de fonctionnement - Google Patents

Circuit d'adaptation d'impédance et système de fourniture de plasma et procédé de fonctionnement

Info

Publication number
EP4136665A1
EP4136665A1 EP21718115.5A EP21718115A EP4136665A1 EP 4136665 A1 EP4136665 A1 EP 4136665A1 EP 21718115 A EP21718115 A EP 21718115A EP 4136665 A1 EP4136665 A1 EP 4136665A1
Authority
EP
European Patent Office
Prior art keywords
impedance matching
matching circuit
voltage
circuit according
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21718115.5A
Other languages
German (de)
English (en)
Inventor
Birger NORDMANN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trumpf Huettinger GmbH and Co KG
Original Assignee
Trumpf Huettinger GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Huettinger GmbH and Co KG filed Critical Trumpf Huettinger GmbH and Co KG
Publication of EP4136665A1 publication Critical patent/EP4136665A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/72—Indexing scheme relating to amplifiers the amplifier stage being a common gate configuration MOSFET
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits
    • H05H2242/26—Matching networks

Definitions

  • the invention relates to an impedance matching circuit with a series circuit connected to a high-frequency connection (HF connection), the series circuit comprising at least one reactance, in particular capacitance, and at least one switching element with a control input to which a control circuit is connected.
  • the invention also includes a plasma supply system having such an impedance matching circuit.
  • the invention also comprises a method for operating a previously described impedance matching circuit, in particular in a previously described plasma supply system.
  • High frequency (HF) here means a frequency of 1 MHz or more. In particular, this means a frequency of 10 MHz or more.
  • a reactance can be an inductance or a capacitance or a combination of both.
  • Such impedance matching circuits are often used in RF-excited plasma processes.
  • HF-excited plasma processes are used, for example, for coating (sputtering) and / or etching substrates in the production of architectural glass, semiconductors, photovoltaic elements, flat screens, displays, etc.
  • the impedances in such processes often change very quickly, which is why the impedance adaptation should often be adapted very quickly (within a few ms or less).
  • the power of such processes is a few 100 W (e.g. 300 W and larger), but not infrequently also a few kW or a few 10 kW. With such powers, the voltage within the impedance matching circuits is often several 100 V, (e.g. 300 V and more), not infrequently 1,000 V or more.
  • the currents in such circuits can be a few amps, often a few 10 A, sometimes even 100 A and more.
  • Implementing impedance matching circuits with such voltages and currents has always been a major challenge.
  • the ability to change reactances quickly in such impedance matching circuits is an additional, very high challenge.
  • Such an impedance matching circuit is shown, for example, in DE 10 2015 220 847 A1 and is referred to there as an impedance matching network.
  • the reactances 18, 20, 22 shown there are variably adjustable in order to be able to adjust the impedance matching.
  • One possibility for the variable setting is to switch reactances of different values on and off by means of electronically controlled semiconductor switches.
  • increased losses occur in the switching element, which can lead to additional thermal stress and destruction of the switching element.
  • a short switching time must be achieved in order to minimize losses and the risk of destruction.
  • an impedance matching circuit with a series circuit connected to a high-frequency connection, the series circuit comprising at least one reactance, in particular capacitance, and at least one switching element with a control input to which a control circuit is connected circuit is connected to an enable signal input via a coupler.
  • the control circuit is preferably designed to be able to control the control input of the at least one switching element in such a way that the state of the at least one switching element can be changed, in particular it can be switched on and off.
  • a coupler is used to transmit an electrical signal or signal information between two separate electrical potentials, in particular between two electrically isolated potentials.
  • the coupler is used in particular to transmit switching information to the control circuit.
  • an enable signal input is a signal input via which the state of the at least one switching element can be changed, in particular it can be switched on and off.
  • the coupler can be designed, for example, as an optocoupler, magnetic coupler, electro-mechanical or electrical coupler.
  • a magnetic coupler is also known as an inductive coupler. The coupling takes place through changing magnetic fields.
  • a transformer or transformer with or without ferrites can be constructed as inductance-increasing elements.
  • An electrical coupler is also known as a capacitive coupler. The coupling takes place via electrical fields.
  • a typical example of an electrical coupler is an electrical capacitor.
  • An electromechanical coupler can be, for example, a relay or a piezo-based coupler.
  • the electrical coupler can be designed to bypass a high voltage that is greater than ground than an HF voltage occurring in the impedance matching circuit, in particular greater than an HF voltage occurring in the series circuit, in particular greater than an the at least one reactance, in particular capacitance, and / or an HF voltage occurring at the at least one switching element.
  • the high voltage can be 300 V or more, in particular also 1,000 V or more.
  • the electrical coupler can be designed to decouple a high frequency (HF) which corresponds to the high frequency with which the impedance matching circuit is applied during operation at the high frequency connection.
  • HF high frequency
  • the HF can be 1 MHz or more, in particular 10 MHz or more.
  • the impedance matching circuit can be designed to switch the switching element (s) on and off during operation, ie when the HF voltage is applied to the HF connection, and in particular when the HF current is flowing through the switching element (s) ) Element (s) to switch this off.
  • the HF current can be 1 A or greater, in particular 10 A or greater, preferably 100 A or greater.
  • the coupler can be constructed from discrete components. For example, it can be designed as an optical waveguide in combination with an optocoupler, as a transformer, transmitter, capacitor, as a combination of individual components or as a component that combines several properties, e.g. as a transmitter with magnetic and capacitive coupling.
  • the coupler can be designed as an integrated circuit.
  • the coupler can be designed in a digital coupler circuit.
  • the control circuit can be constructed from discrete components. Alternatively, it can be designed as an integrated circuit.
  • the series circuit can have two antiseries-connected transistors, in particular field effect transistors, which are connected at their source connections in the case of field effect transistors or emitters in the case of bipolar transistors and are at a common source potential or emitter potential.
  • a control circuit which is at the common source potential or emitter potential and resonates with the frequency of the signal to be transmitted by the impedance matching circuit enables the gate-source capacitance or base-emitter capacitance to be recharged quickly.
  • the control circuit can be connected to a supply voltage via at least one choke. As a result, the control circuit can be decoupled.
  • Two throttles are preferably provided.
  • a choke is provided between a connection of the supply voltage and a connection of the control circuit.
  • the chokes are designed to deliver an average supply current to the control circuit and possibly the coupler.
  • the chokes are designed to not carry any fast switching edges. Fast switching edges mean edge durations (10% to 90%) of 1 ms or less, in particular of 100 ps or less, preferably of 10 ps or less.
  • the chokes can in particular have the same inductance.
  • the control circuit can be connected, in particular directly, to the source potential or emitter potential.
  • control circuit can be connected via a referencing circuit to a connection point of the series circuit, in particular to a source connection, in particular to the source potential.
  • the referencing circuit can be designed and in particular also used to reference the supply voltage in a bipolar manner with respect to the source potential. It is therefore not necessary to feed a negative supply voltage to the control circuit via a further choke.
  • the referencing circuit can resonate with the frequency of the signal to be transmitted. A bipolar supply voltage is helpful for faster reloading of the gate-source capacitance. Furthermore, high-frequency signals coupling to the gate-source voltages can be compensated.
  • connection point can be connected directly to the referencing circuit.
  • the referencing circuit can thus resonate particularly well with the frequency of the signal to be transmitted.
  • the referencing circuit can have a voltage divider. This allows the decoupled supply voltage to be referenced.
  • the voltage divider can in particular have two resistors connected in series. The resistances can in particular have the same value.
  • connection point of the two series-connected resistors can be connected to the source potential, in particular directly connected.
  • the referencing circuit can have one, in particular two, internal DC voltage source (s), the internal DC voltage source (s) in particular having (have) one capacitor each.
  • one or the internal DC voltage sources can each consist of a capacitance. Each capacitance can be formed from one or more capacitors.
  • the two internal DC voltage sources can be connected in series and, in particular, have the same voltage.
  • the common connection point of the two series-connected internal DC voltage sources can be connected to the source potential, in particular directly connected.
  • the common connection point of the two series-connected internal DC voltage sources can be connected to the voltage divider, in particular at the connection point of the two resistors of the voltage divider. In this way, the voltage of the two voltage sources can be kept constant.
  • the referencing circuit can be connected to a supply voltage via at least one choke.
  • the inductance of the choke (s) can be dimensioned in such a way that the HF current flowing from the control circuit or the referencing circuit to the supply voltage is negligibly small.
  • the supply voltage can hold the voltage source (s) at a fixed potential that is set accordingly for switching the transistors.
  • the series circuit can have a switching transistor with a grounded source potential.
  • the series circuit can have at least two parallel switching elements. This can increase the current strength.
  • the impedance matching circuit can have a plurality of series circuits connected in parallel, each with a control circuit connected to it.
  • Reactances provided in the series connections can have different values.
  • the object is also achieved by a plasma supply system with a high-frequency power generator, a load in the form of an HF-operated plasma process for coating or etching a substrate and an impedance matching circuit described above.
  • the object is also achieved by a plasma supply system with a high-frequency power generator, a load in the form of an HF-operated plasma process for coating or etching a substrate and an impedance matching arrangement which has several of the impedance matching circuits described above.
  • the object is also achieved by a method for operating a previously described impedance matching circuit, in particular in a previously described plasma supply system, with one or more of the following method steps: a) Switching on the switching element or the switching elements, in particular by a sufficiently large positive Voltage between the control connection and a source connection or control connections and source connections, b) switching off the switching element or the switching elements, in particular by a sufficiently negative voltage between the control connection and a source connection or control connections and source connection - Connections, c) switching on a high voltage to the drain connection of the switching element or the drain connections of the switching elements, the amount of the high voltage being greater than the magnitude of the largest voltage between the drain connection and the source connection, d) disconnection a high voltage from the drain connection of the switching element or from the drain connections of the switching elements.
  • the above-mentioned process steps b) and c) can preferably take place at the same time.
  • the above-mentioned process steps a) and d) can preferably take place at the same
  • Fig. 1 shows a plasma supply system with an impedance matching circuit
  • Fig. 2 shows part of an impedance matching circuit
  • FIG. 1 shows a plasma supply system 1 with a high-frequency power generator 40, which is connected to a load 28, in particular a plasma load, via an impedance matching circuit 11.
  • the impedance matching circuit 11 is part of an impedance matching arrangement 9.
  • the impedance matching circuit 11 includes reactances 18, 20, 22, which are each controlled via a control circuit 12, 14, 16 in order to change their reactance value.
  • the control circuits 12, 14, 16 are controlled by a controller 32.
  • Via a measuring device 25, which can have measuring elements 24, 26, for example for detecting current and voltage, forward power and reflected power and / or impedance amount and phase angle, is connected to controller 32.
  • a power reflected at the load 28 or a reflection factor can be determined.
  • a reflected power occurs when there is a mismatch, that is, when the impedance of the load 28 is not matched to the output impedance of the power generator 40.
  • a corresponding measuring device can also be arranged at the input or within the impedance matching arrangement 9.
  • the impedance matching arrangement 10 is suitable for converting the Las timpedance 27 at the input of the load 28 into a transformed load impedance 29 at the input of the impedance matching circuit 10, that is to say on the generator side. 2 shows part of the impedance matching circuit 11.
  • a series circuit 10 here comprises two switching elements TI, T2, which are designed as field effect transistors.
  • a series circuit 10 comprises at least one reactance, in particular capacitance CI, C2 and at least one switching element TI, T2.
  • Such a series circuit 10 can be part of one of the reactances 18, 20, 22 of FIG. 1.
  • Reactances can be inductances or capacitances CI, C2.
  • a variable reactance 18, 20, 22 can have a plurality of series circuits connected in parallel, which are constructed like the series circuit 10 described above.
  • FIG. 2 The arrangement shown in FIG. 2 is suitable for dynamically connecting a capacitance CI, C2 to an RF path.
  • the connection to the HF path is identified by RFin and corresponds to the connection to the power generator 40.
  • the operation of the circuit of Figure 2 can be described as follows:
  • the switching elements TI, T2 are switched on, that is to say switched on. In the present case, this can take place by means of a sufficiently large positive voltage between the two drive connections G and the two source connections S.
  • the switching elements TI, T2 are switched off, that is to say switched to be non-conductive. In the present case, this can be done by means of a sufficiently negative voltage between the two drive connections G and the two source connections S.
  • the voltage between the source terminals S and the drain terminals Dl, D2 of the switching elements TI, T2 must not be positive, otherwise the switching elements Elements TI, T2 could become conductive via internal parasitic diodes, and the switching elements TI, T2 could be destroyed.
  • the external wiring can be done by connecting a high voltage HV.
  • This high voltage HV can be a direct voltage.
  • This high voltage HV should be larger in terms of amount than the maximum negative voltage that occurs at one of the drain terminals Dl, D2.
  • This high voltage HV can be switched on via a further switching element T3, i.e. the further switching element T3 is switched on during operation, i.e. switched on, when the control circuit 12 switches off the switching elements TI, T2, that is, switches it non-conductive.
  • the further switching element T3 and the high voltage HV can be protected against high frequency via an HF filtering arrangement, in particular an RL element will.
  • the RL element has a resistor RI, R2 and an inductance LI, L2 each, which are each connected in series.
  • the switching elements When the switching elements are switched on again, ie switched on, the high voltage HV should be separated from the switching elements TI, T2, so the further switching element T3 should be switched off, ie non-conductive, so that the series circuit 10 is not through to load a high voltage.
  • the arrangement of FIG. 2 can be implemented on a printed circuit board (PCB).
  • the switching elements TI, T2 are controlled by a control circuit 12 at their control connections G. This receives a switching signal from a coupler 13 which is connected to an enable signal input (enable). During the switching process, increased losses occur in the switching elements TI, T2, which can lead to additional thermal stress and destruction of the switching elements TI, T2. A short switching time must be achieved in order to minimize losses and the risk of destruction.
  • the switching elements TI, T2 are on a common
  • a drive circuit 12 which is at the common source potential and oscillates at the frequency of the high-frequency signal generated by the power generator 40 enables the gate-source capacitances of the switching elements TI, T2 to be recharged quickly.
  • the control circuits 12, 14, 16 can be designed in the same way.
  • the coupler 13 can be integrated into the control circuits 12, 14, 16 or implemented in the control 32.
  • the coupler 13 can be constructed from discrete components.
  • the coupler 13 can be implemented as an optocoupler, magnetic coupler, electrical coupler, electromechanical coupler or any arrangement for transmitting information, in particular as a digital coupler, in particular as an integrated circuit.
  • the control circuit 12 can be implemented from discrete components or integrated with the coupler 13.
  • the supply voltage Vbias is made available to the control circuit 12 via HF chokes L3, L4.
  • the control circuit 12 is decoupled by the chokes L3, L4.
  • the chokes L3, L4 only supply the average supply current of the control circuit 12 and possibly the coupler 13.
  • a referencing circuit 17 can additionally be provided at the supply input of the control circuit 12. On the one hand, it is designed to stabilize the voltage at the input of the control circuit 12. Another function of the referencing circuit 17 is described in connection with FIG. 3.
  • the potential labeled GND / RFout in FIG. 2 can be used as an RF output.
  • the capacitance C2 can be replaced by a further switching transistor with a source potential at GND.
  • a referencing circuit 17, which is shown in detail in FIG. 3, can be designed and in particular also used to refer to the supply voltage Vbias bipolarly with respect to the source potential. It is therefore not necessary to feed a negative supply voltage to the control circuit 12 via a further choke.
  • the referencing circuit 17 can be connected to a potential of the series circuit, in particular to the source S connections. Then it also oscillates at the frequency of the signal generated by the power generator 40. Such a bipolar supply voltage is helpful for faster reloading of the gate-source capacitance. Furthermore, RF signals coupling to the gate-source voltages can be compensated.
  • the referencing circuit 17 does not necessarily have to generate a bipolar voltage.
  • the connection of the potential connected to GND via the choke L4 with the source potential (S) is also possible, please include. 3 shows the referencing circuit 17. It comprises the resistors R3, R4 and the capacitors C3, C4. Referencing circuit 17 has a voltage divider R3, R4 and two internal DC voltage sources VI, V2, the internal DC voltage sources each having a capacitor C3, C4.
  • the two resistors R3, R4 are connected in series.
  • the common connection point of the two series-connected resistors R3, R4 is connected to the source terminals S.
  • the common connection point of the two series-connected resistors R3, R4 is in particular also connected to the common connection point of the two series-connected internal DC voltage sources VI, V2.
  • the two internal DC voltage sources VI, V2 are connected in series.
  • Each DC voltage source VI, V2 consists of a capacitor C3, C4.
  • Each capacitance C3, C4 can be implemented from one or more capacitors.
  • the common connection point of the two series-connected internal DC voltage sources VI, V2 is connected to the source connections S.
  • the supply voltage Vbias can be designed as a power supply with a fixed output voltage that charges the two capacitances C3, C4 via the chokes L3, L4, that is, with a current filtered through the chokes L3, L4, supplies the charge that the control circuit 12 controls the series circuit 10 consumed.
  • Such an impedance matching circuit 11 is also shown, for example, in DE 20 2020 103 539 U1 and is referred to there as an impedance matching arrangement 11.
  • the reactances 18, 20, 22 shown there are also variably adjustable in order to adjust the impedance matching.
  • One possibility of the variable setting is to electronically set reactances of different values to switch the activated semiconductor switch on and off.
  • the series circuit 10 described here can be designed like a circuit arrangement 116 described there.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
  • Plasma Technology (AREA)
  • Power Conversion In General (AREA)

Abstract

Circuit d'adaptation d'impédance (11), système de fourniture de plasma (1) comprenant ce circuit d'adaptation d'impédance, et procédé de fonctionnement de ce circuit d'adaptation d'impédance, en particulier dans ce système de fourniture de plasma comprenant un circuit en série (10) connecté à une borne radiofréquence (RFin), le circuit en série comprenant au moins une réactance, en particulier une capacité (C1, C2), et au moins un élément de commutation (T1, T2) ayant une entrée de commande (G), à laquelle est connecté un circuit de commande (12), caractérisé en ce que le circuit de commande est connecté à une entrée de signal d'activation par l'intermédiaire d'un coupleur (13). À cet égard, il est possible d'obtenir des temps de commutation courts conjointement avec de faibles pertes dans le ou les éléments de commutation.
EP21718115.5A 2020-04-15 2021-04-12 Circuit d'adaptation d'impédance et système de fourniture de plasma et procédé de fonctionnement Pending EP4136665A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE202020102084.6U DE202020102084U1 (de) 2020-04-15 2020-04-15 Impedanzanpassungsschaltung und Plasmaversorgungssystem
PCT/EP2021/059449 WO2021209390A1 (fr) 2020-04-15 2021-04-12 Circuit d'adaptation d'impédance et système de fourniture de plasma et procédé de fonctionnement

Publications (1)

Publication Number Publication Date
EP4136665A1 true EP4136665A1 (fr) 2023-02-22

Family

ID=70858492

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21718115.5A Pending EP4136665A1 (fr) 2020-04-15 2021-04-12 Circuit d'adaptation d'impédance et système de fourniture de plasma et procédé de fonctionnement

Country Status (7)

Country Link
US (1) US20230043171A1 (fr)
EP (1) EP4136665A1 (fr)
JP (1) JP2023521233A (fr)
KR (1) KR20230002729A (fr)
CN (1) CN115398595A (fr)
DE (1) DE202020102084U1 (fr)
WO (1) WO2021209390A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202020103539U1 (de) 2020-06-19 2020-06-29 TRUMPF Hüttinger GmbH + Co. KG Schaltbare-Reaktanz-Einheit, veränderbare Reaktanz, Hochfrequenzgenerator und Impedanzanpassungsanordnung mit einer Schaltbare-Reaktanz- Einheit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654679A (en) * 1996-06-13 1997-08-05 Rf Power Products, Inc. Apparatus for matching a variable load impedance with an RF power generator impedance
DE102011007598B4 (de) * 2011-04-18 2014-06-26 TRUMPF Hüttinger GmbH + Co. KG Verfahren und Vorrichtung zur Impedanzanpassung
US10340879B2 (en) * 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
DE102015220847A1 (de) 2015-10-26 2017-04-27 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Impedanzanpassung einer Last an die Ausgangsimpedanz eines Leistungsgenerators und Impedanzanpassungsanordnung
US10229816B2 (en) * 2016-05-24 2019-03-12 Mks Instruments, Inc. Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network
JP6898338B2 (ja) * 2016-09-29 2021-07-07 株式会社ダイヘン インピーダンス整合装置
US10269540B1 (en) * 2018-01-25 2019-04-23 Advanced Energy Industries, Inc. Impedance matching system and method of operating the same
DE202020103539U1 (de) 2020-06-19 2020-06-29 TRUMPF Hüttinger GmbH + Co. KG Schaltbare-Reaktanz-Einheit, veränderbare Reaktanz, Hochfrequenzgenerator und Impedanzanpassungsanordnung mit einer Schaltbare-Reaktanz- Einheit

Also Published As

Publication number Publication date
DE202020102084U1 (de) 2020-05-13
KR20230002729A (ko) 2023-01-05
JP2023521233A (ja) 2023-05-23
CN115398595A (zh) 2022-11-25
WO2021209390A1 (fr) 2021-10-21
US20230043171A1 (en) 2023-02-09

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