EP4131360A4 - Halbleiteranordnung - Google Patents

Halbleiteranordnung Download PDF

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Publication number
EP4131360A4
EP4131360A4 EP21781282.5A EP21781282A EP4131360A4 EP 4131360 A4 EP4131360 A4 EP 4131360A4 EP 21781282 A EP21781282 A EP 21781282A EP 4131360 A4 EP4131360 A4 EP 4131360A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21781282.5A
Other languages
English (en)
French (fr)
Other versions
EP4131360A1 (de
Inventor
Yuto Tanaka
Shuichi Oka
Shun Mitarai
Kiwamu Adachi
Takahiro Igarashi
Hiizu Ohtorii
Naoki Kakoiyama
Kousuke SEKI
Hiroyuki Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of EP4131360A1 publication Critical patent/EP4131360A1/de
Publication of EP4131360A4 publication Critical patent/EP4131360A4/de
Pending legal-status Critical Current

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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
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    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

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  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
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WO2023243271A1 (ja) * 2022-06-16 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置
WO2024105713A1 (ja) * 2022-11-14 2024-05-23 三菱電機株式会社 熱型赤外線検出器及びその製造方法

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US20140015121A1 (en) * 2012-07-13 2014-01-16 Shinko Electric Industries, Co. Ltd. Wiring substrate and manufacturing method thereof
JP2016208057A (ja) * 2014-05-02 2016-12-08 サムソン エレクトロ−メカニックス カンパニーリミテッド． 印刷回路基板、印刷回路基板ストリップ及びその製造方法
WO2019073801A1 (ja) * 2017-10-11 2019-04-18 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法

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US6989600B2 (en) * 2000-04-20 2006-01-24 Renesas Technology Corporation Integrated circuit device having reduced substrate size and a method for manufacturing the same
JP5641202B2 (ja) * 2010-06-07 2014-12-17 ソニー株式会社 インターポーザ、モジュールおよびこれを備えた電子機器
JP6201663B2 (ja) 2013-11-13 2017-09-27 大日本印刷株式会社 貫通電極基板の製造方法、貫通電極基板、および半導体装置
JP6369436B2 (ja) 2015-09-29 2018-08-08 大日本印刷株式会社 貫通電極基板および貫通電極基板の製造方法
JP2017084843A (ja) 2015-10-22 2017-05-18 イビデン株式会社 回路基板及びその製造方法
WO2017086222A1 (ja) * 2015-11-19 2017-05-26 京セラ株式会社 電子素子実装用基板および電子装置
CN108391451B (zh) * 2015-11-24 2022-09-13 索尼公司 图像拾取元件封装件及其制造方法、图像拾取装置
JP2017224672A (ja) 2016-06-14 2017-12-21 凸版印刷株式会社 半導体パッケージ基板、半導体パッケージ、およびその製造方法
JP2020004884A (ja) * 2018-06-29 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器

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US20140015121A1 (en) * 2012-07-13 2014-01-16 Shinko Electric Industries, Co. Ltd. Wiring substrate and manufacturing method thereof
JP2016208057A (ja) * 2014-05-02 2016-12-08 サムソン エレクトロ−メカニックス カンパニーリミテッド． 印刷回路基板、印刷回路基板ストリップ及びその製造方法
WO2019073801A1 (ja) * 2017-10-11 2019-04-18 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法

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