EP4055628A1 - Method for protecting an optoelectronic device against electrostatic discharges - Google Patents

Method for protecting an optoelectronic device against electrostatic discharges

Info

Publication number
EP4055628A1
EP4055628A1 EP20789134.2A EP20789134A EP4055628A1 EP 4055628 A1 EP4055628 A1 EP 4055628A1 EP 20789134 A EP20789134 A EP 20789134A EP 4055628 A1 EP4055628 A1 EP 4055628A1
Authority
EP
European Patent Office
Prior art keywords
optoelectronic
gripper
optoelectronic devices
pix
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20789134.2A
Other languages
German (de)
French (fr)
Inventor
Frédéric Mayer
Frédéric MERCIER
Ivan-Christophe Robin
Xavier Hugon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Publication of EP4055628A1 publication Critical patent/EP4055628A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area

Definitions

  • the present description relates generally to systems and methods for protecting optoelectronic devices against electrostatic discharges.
  • optoelectronic devices devices suitable for converting an electrical signal into electromagnetic radiation or vice versa, and in particular devices dedicated to the detection, measurement or emission of electromagnetic radiation.
  • An example application relates to a display screen comprising a support on which are fixed separate optoelectronic devices, each optoelectronic device comprising at least one light emitting diode and corresponding to a display pixel.
  • Another example of application relates to an image sensor comprising a support on which optoelectronic devices are individually fixed, each optoelectronic device comprising at least one photodiode for capturing signals relating to an image pixel.
  • ESD ElectroStatic Discharge
  • an object of an embodiment is to at least partially overcome the drawbacks of the systems and methods for protecting optoelectronic devices against ESDs described above.
  • Another object of an embodiment is to protect the optoelectronic device against ESDs during handling of the optoelectronic device.
  • Another object of an embodiment is that the optoelectronic devices can be formed on an industrial scale and at low cost.
  • One embodiment provides a method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light emitting diode or a photodiode, the method comprising forming a first plate, comprising several copies of the optoelectronic circuit, fixing the first plate to a support, separating the optoelectronic devices from each other, and removing the support from several optoelectronic devices among said optoelectronic devices by a gripping system, in which the gripping system comprises at minus a system for protecting optoelectronic devices against electrostatic discharges.
  • the gripping system comprises a gripper comprising housings adapted to receive the optoelectronic devices, and before the step of removing said several optoelectronic devices from the support by the gripper, one of the optoelectronic devices other that said several optoelectronic devices, called sacrificial device, is brought into contact with the gripper before said several optoelectronic devices come into contact with the gripper.
  • the gripping system comprises a protruding element with respect to the gripper coming into contact with the sacrificial device during a relative approach between the gripper and the support before said several optoelectronic devices come into contact with the gripper.
  • the protection system comprises a plate connected to the gripper by an elastic connection.
  • the elastic connection is electrically conductive.
  • the method comprises the local deformation of the support to bring said sacrificial device closer to the gripper with respect to said several optoelectronic devices.
  • the protection system comprises an actuator adapted to locally deform the support.
  • each optoelectronic device comprises an electronic circuit comprising at least one electronic component, the optoelectronic circuit being fixed to the electronic circuit.
  • One embodiment also provides a gripping system for implementing the method as defined above, comprising the system for protecting optoelectronic devices against electrostatic discharges.
  • the protection system comprises a plate connected to the gripper by an elastic connection.
  • the protection system comprises an actuator adapted to locally deform the support.
  • Figure 1 is a sectional view, partial and schematic, of an example of an optoelectronic device with light-emitting diodes
  • FIG. 2 is a sectional view of the structure obtained in a step of an example of a method of manufacturing the optoelectronic device of FIG. 1;
  • FIG. 3 is a sectional view of the structure obtained in a step of an embodiment of a method for placing optoelectronic devices implementing protection against ESD;
  • Figure 4 is a sectional view of the structure obtained in another step of the process
  • Figure 5 is a sectional view of the structure obtained in another step of the process
  • Figure 6 is a sectional view of the structure obtained in another step of the process.
  • FIG. 7 is a sectional view of the structure obtained in a step of another embodiment of a method for placing optoelectronic devices implementing protection against ESD;
  • Figure 8 is a sectional view of the structure obtained in another step of the process.
  • Figure 9 is a sectional view of the structure obtained in another step of the process.
  • Figure 10 is a sectional view of the structure obtained in another step of the process.
  • Figure 11 is a sectional view, partial and schematic, of a more detailed embodiment of the structure of a display pixel.
  • Embodiments of ESD protection systems and methods will be described for optoelectronic devices corresponding to display pixels. However, it is clear that these embodiments can be implemented for other types of optoelectronic devices, for example image pixel sensors.
  • Figure 1 is a sectional view, partial and schematic, of an embodiment of a display pixel Pix.
  • the display pixel Pix includes from bottom to top in Figure 1:
  • control circuit an electronic circuit 10, referred to below as a control circuit
  • the control circuit 10 comprises a lower face 12 and an upper face 14 opposite to the lower face 12, the faces 12 and 14 preferably being parallel.
  • the control circuit 10 further comprises conductive pads 16 on the lower face 12.
  • the control circuit 10 may include a semiconductor substrate 18, a stack 20 of insulating layers covering the substrate 18 and tracks. conductors 22 of several metallization levels formed between the insulating layers of the stack 20 and connected by conductive vias not shown.
  • the control circuit 10 can further comprise electronic components, not shown in FIG. 1, in particular transistors, formed in and / or on the substrate 18.
  • An insulating layer, not shown, can cover the semiconductor substrate 18 on the side opposite to it. the stack 20 and delimit the lower face 12 of the control circuit 10.
  • the control circuit 10 can also comprise through-conductive vias, not shown, extending in the substrate 18, over the entire thickness of the substrate 18 for connecting the pads 16 to the front face of the substrate 18.
  • the semiconductor substrate 18 is, for example, a silicon substrate, in particular monocrystalline silicon.
  • the electronic components can then include insulated gate field effect transistors, also called MOS transistors.
  • the substrate 18 can correspond to a non-semiconductor substrate.
  • the electronic components can then comprise thin film transistors, also called TFT transistors (acronym for Thin-Film transistor), formed on the substrate 18.
  • the optoelectronic circuit 30 is fixed to the upper face 14 of the control circuit 10. It comprises a support 32 on which are formed light emitting diodes LEDs, preferably at least three light emitting diodes.
  • the optoelectronic circuit 30 may comprise photoluminescent blocks 34 covering the light emitting diodes LEDs on the side opposite to the control circuit 10. Each photoluminescent block 34 faces at least one of the light emitting diodes LEDs.
  • the optoelectronic circuit 30 comprises conductive elements 36, located in the support 32, and connected to LED electrodes.
  • the optoelectronic circuit 30 is electrically connected to the control circuit 10 by conductive pads, which may correspond to the conductive elements 36, and which are in contact with conductive pads of the control circuit 10.
  • the optoelectronic circuit 30 comprises only the light-emitting diodes LEDs and the conductive elements 36 of these light-emitting diodes LEDs and the control circuit 10 comprises all the electronic components necessary for controlling the light-emitting diodes LEDs of the optoelectronic circuit 30
  • optoelectronic circuit 30 may also include other electronic components in addition to light emitting diodes LEDs.
  • FIG. 2 is a sectional view of a structure 40 obtained at a step of an example of a method of manufacturing the display pixel Pix of FIG. 1.
  • the structure 40 comprises a plate 42 of integrated circuits comprising several examples of the control circuit 10 and a plate 44 comprising several examples of the optoelectronic circuit 30, three examples of the control circuit 10 and of the optoelectronic circuit 30 being shown.
  • Each plate 42, 44 can be manufactured separately.
  • the plate 42 comprising the control circuits 10 can be fabricated using CMOS transistor fabrication techniques.
  • the plate 44 comprising the optoelectronic circuits 30 can then be fixed to the plate 42 comprising the control circuits 10, for example by hybrid molecular bonding.
  • the manufacturing method may include the temporary attachment of the plate 42 to a support 46, also called a handle, by means of a layer of adhesive 48.
  • the layer of adhesive 48 is electrically conductive.
  • the use of the handle 46 can in particular be provided after a step of fixing the plate 42 to the plate 44 followed by a step of thinning the substrate 18.
  • a cutting step can then be implemented to individualize the display pixels Pix.
  • the cutout is made on the side of the upper face 49 of the structure 40 which is the face of the plate 44 furthest from the handle 46.
  • the display pixels Pix can then be removed from the support 46, and fixed to another. support, for example a printed circuit, to obtain a display screen.
  • a display screen can comprise from 10 to 10 9 pixels of display Pix.
  • Each display pixel Pix can occupy, in top view, an area of between 1 ⁇ m 2 and 100 mm 2 .
  • the thickness of each display pixel Pix can be between 1 ⁇ m and 6 mm.
  • Electrostatic discharges can occur during the manipulation of the display pixels Pix once individualized.
  • a system for protecting the display pixels Pix against ESD is provided, after the separation of the display pixels Pix, during the manipulation of the display pixels.
  • the manipulation of the display pixels can be carried out by means of a gripper which can simultaneously pick up several display pixels to deposit them on a support, for example a printed circuit of a display screen.
  • ESD can occur when the gripper comes in contact with display pixels.
  • the protection system comprises means for, before the gripper comes into contact with the display pixels, bringing a sacrificial display pixel into contact with the gripper. Therefore, if an ESD discharge occurs, it will be through the sacrificial display pixel. This sacrificial display pixel can then be systematically ruled out whether or not an ESD has occurred.
  • Figures 3 to 6 are sectional views, partial and schematic, of an embodiment of a gripping system 50 of display pixels Pix, comprising a protection system 52 against ESD, at successive stages of a transport of the display pixels Pix.
  • the gripping system 50 comprises a gripper 54 having housings 56, each housing 56 being able to receive a display pixel Pix.
  • the gripper 54 comprises means, not shown, for maintaining the display pixel Pix in the corresponding housing 56 when the gripper 54 is placed in contact with or near the housing 56.
  • the holding means may comprise suction cups, for example suction cups. vacuum suction cups.
  • each housing 56 delimited by a rim 58. However, the rims 58 may not be present.
  • the protection system 52 is disposed in one of the housings 56 and comprises a plate 60 connected by an elastic connection 62 to the housing 56. In the housing 56 where the protection system 52 is provided, there may not be any means. maintenance.
  • the gripping system 50, in particular the plate 60, the elastic connection 62, and the gripper 54 are at least partly made of a conductive material so as to allow the circulation of electric charges.
  • the transport of the display pixels Pix comprises the following steps:
  • each display pixel Pix being located opposite of one of the housings 56, the display pixel arranged in front of the housing 56 in which is provided the protection system 52 corresponds to the sacrificial pixel Pix 'described above;
  • a conductive adhesive layer 48 advantageously makes it possible to create a path for evacuating the electrical charges from the gripper 54 to the handle 46, passing through the sacrificial pixel Pix ';
  • Subsequent steps of the method may include moving the gripper 54, provided with the display pixels Pix, to a support, and depositing the display pixels Pix on the support.
  • Figures 7 to 10 are sectional views, partial and schematic, of another embodiment of a system gripping 70 of display pixels Pix, comprising a protection system 72 against ESD, at successive stages of a transport of the display pixels Pix.
  • the gripping system 70 comprises all the elements of the gripping system 50 shown in Figures 3 to 6 with the exception of the protection system 52 which is replaced by the protection system 72 which comprises a deformable element 74 disposed on the side of the handle 46 opposite the sacrificial pixel Pix 'and adapted to locally deform the handle 46 when it is actuated.
  • the handle 46 can be locally deformed.
  • the handle 46 may correspond to a film, for example of polyethylene terephthalate (PET) or of polypropylene, covered with an adhesive, for example an acrylic glue.
  • the handle may correspond to a thinned silicon substrate.
  • the handle 46 has, for example, a thickness of between 50 ⁇ m and 300 ⁇ m.
  • the protection system 72 may include a piezoelectric actuator.
  • the transport of the display pixels Pix comprises the following steps:
  • each display pixel Pix being located opposite of one of the housings 56, the deformable element 74 not being actuated so that the handle 46 is not locally deformed by the deformable element 74;
  • the displacement of the sacrificial pixel Pix 'between the undeformed state of the deformable element 74 and the deformed state of the deformable element 74 can be between 1 ⁇ m and 1 mm;
  • the method continues with the release of the display pixels Pix relative to the handle 46, for example by local deterioration by laser of the adhesive layer 48 or by tearing, the suction force of the gripping system 50 on the display pixels Pix being greater than the holding force of the adhesive layer 48, possibly with the exception of the sacrificial pixel Pix ', and the distance of the gripper 54 from the handle 46, the display pixels Pix remaining attached to the gripper 54 by virtue of the holding means.
  • Subsequent steps of the method may comprise the relative movement between the gripper 54, provided with the display pixels Pix, up to a medium, and the deposition of the display pixels Pix on the medium.
  • FIG. 11 is a partial and schematic sectional view of a more detailed embodiment of the display pixel Pix.
  • the semiconductor substrate for example monocrystalline silicon, an insulating layer 78 on the side of the lower face 12 and the two conductive pads 16;
  • the stack 20 of insulating layers for example made of silicon oxide and / or silicon nitride, covering the substrate 18 and the conductive tracks 22 with several metallization levels formed between the insulating layers of the stack, therefore in particular pads 82 exposed on the upper face 14 of the electronic circuit 10, the conductive tracks 22 of the first metallization level possibly being in polysilicon and in particular forming the gates of the MOS transistors 80 and the conductive tracks 22 of the other metallization levels possibly being metal tracks , for example aluminum, silver, copper or zinc; and
  • the optoelectronic circuit 30 of the display pixel Pix comprises from bottom to top in FIG. 11:
  • the support 32 comprising a lower face 86 in contact with the upper face 14 and comprising conductive pads 88 exposed on the lower face 86, in contact with the pads 82, and a multilayer insulating structure 92, for example made of silicon oxide and silicon nitride, extending between the pads 88 and covering the pads 88 and comprising openings 93 exposing portions of the pads 88;
  • Threads Microwires or nanowires 94, called threads hereinafter (six threads being shown), each thread 94 being in contact with one of the pads 88 through one of the openings 93;
  • a shell 98 comprising a stack of semiconductor layers covering an upper portion of each wire 94 and extending over the insulating layer 96 between the wires 94, the shell 98 notably comprising an active layer which is the layer from which the majority is emitted radiation supplied by the light-emitting diode and comprising, for example, confinement means, such as multiple quantum wells;
  • a conductive and reflective layer 100 extending over the shell 98 between the wires 94;
  • a layer 102 forming an electrode covering, for each wire 94, the shell 98 and extending, in addition, on the conductive layer 100 between the wires 94, the electrode layer 102 being adapted to pass the emitted electromagnetic radiation by light-emitting diodes and being composed of a transparent and conductive material such as indium-tin oxide (or ITO, acronym for Indium Tin Oxide), zinc oxide doped with aluminum or gallium, or graphene;
  • ITO indium-tin oxide
  • ITO Indium Tin Oxide
  • each photoluminescent block 34 covering certain assemblies of light-emitting diodes LEDs or blocks transparent to the radiation emitted by the light emitting diodes, each photoluminescent block comprising phosphors adapted, when excited by the light emitted by the associated light emitting diodes LEDs, to emit light at a wavelength different from the wavelength wave of light emitted by associated light emitting diodes LEDs;
  • a protective layer 108 covering the insulating layers 106, the side faces of the blocks 34 and the electrode layer 102 between the blocks 104;
  • each wall 110 possibly comprising a core 112 surrounded by a coating 114 reflecting at the wavelength of the radiation emitted by the photoluminescent blocks 34 and / or the light-emitting diodes LEDs;
  • an encapsulation layer 118 covering the entire structure.
  • Each wire 94 has for example an average diameter, corresponding for example to the diameter of the disc having the same area as the cross section of the wire 94, between 5 nm and 5 ⁇ m, preferably between 100 nm and 2 ⁇ m, more preferably between 200 nm and 1.5 ⁇ m and a height greater than or equal to greater than 1 time, preferably greater than or equal to 3 times and even more preferably greater than or equal to 5 times the mean diameter, in particular greater than 500 nm, preferably between 1 pm and 50 pm.
  • the wires 94 include at least one material semiconductor.
  • the semiconductor material can be silicon, germanium, silicon carbide, a III-V compound, for example GaN, AIN, InN, InGaN, AlGaN or AlInGaN, a II-VI compound or a combination of at least two of these compounds.
  • the light-emitting diodes LEDs are adapted to emit blue light, that is to say radiation whose wavelength is in the range of 430 nm to 490 nm.
  • the first wavelength corresponds to green light and is in the range of 510 nm to 570 nm.
  • the second wavelength corresponds to red light and is in the range of 600 nm to 720 nm.
  • the light-emitting diodes LEDs are for example suitable for emitting radiation in the ultraviolet.
  • the first wavelength corresponds to blue light and is in the range 430 nm to 490 nm.
  • the second wavelength corresponds to green light and is in the range of 510 nm to 570 nm.
  • the third wavelength corresponds to red light and is in the range of
  • the base of the pyramid is inscribed in a polygon whose side dimension is from 100 nm to 10 ⁇ m, preferably between 1 ⁇ m and 3 ⁇ m.
  • the polygon forming the base of the pyramid can be a hexagon.
  • the height of the pyramid between the base of the pyramid and the top or the top plate varies from 100 nm to 20 ⁇ m, preferably between 1 ⁇ m and 10 ⁇ m.

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Abstract

The present description relates to a method for protecting optoelectronic devices (Pix) against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit with at least one optoelectronic component chosen from an electroluminescent diode or a photodiode. The method comprises the steps of: forming a first plate comprising a plurality of the optoelectronic circuits; attaching the first plate to a support member (46); separating the optoelectronic devices from each other; and removing the support member from a plurality of optoelectronic devices present by means of a gripper system, wherein the gripper system comprises at least one system for protecting the optoelectronic devices against electrostatic discharges.

Description

DESCRIPTION DESCRIPTION
PROCEDE DE PROTECTION D'UN DISPOSITIF OPTOELECTRONIQUE CONTREMETHOD FOR PROTECTING AN OPTOELECTRONIC DEVICE AGAINST
LES DECHARGES ELECTROSTATIQUES ELECTROSTATIC DISCHARGES
La présente demande de brevet revendique la priorité de la demande de brevet français FR19/12567 qui sera considérée comme faisant partie intégrante de la présente description.The present patent application claims the priority of the French patent application FR19 / 12567 which will be considered as forming an integral part of the present description.
Domaine technique Technical area
[0001] La présente description concerne de façon générale les systèmes et procédés de protection de dispositifs optoélectroniques contre les décharges électrostatiques. The present description relates generally to systems and methods for protecting optoelectronic devices against electrostatic discharges.
Technique antérieure Prior art
[0002] Par dispositifs optoélectroniques, on entend des dispositifs adaptés pour effectuer la conversion d'un signal électrique en un rayonnement électromagnétique ou inversement, et notamment des dispositifs dédiés à la détection, la mesure ou l'émission d'un rayonnement électromagnétique. Un exemple d'application concerne un écran d'affichage comprenant un support sur lequel sont fixés des dispositifs optoélectroniques distincts, chaque dispositif optoélectronique comprenant au moins une diode électroluminescente et correspondant à un pixel d'affichage. Un autre exemple d'application concerne un capteur d'images comprenant un support sur lequel sont fixés individuellement des dispositifs optoélectroniques, chaque dispositif optoélectronique comprenant au moins une photodiode pour la capture de signaux relatifs à un pixel d'image. By optoelectronic devices is meant devices suitable for converting an electrical signal into electromagnetic radiation or vice versa, and in particular devices dedicated to the detection, measurement or emission of electromagnetic radiation. An example application relates to a display screen comprising a support on which are fixed separate optoelectronic devices, each optoelectronic device comprising at least one light emitting diode and corresponding to a display pixel. Another example of application relates to an image sensor comprising a support on which optoelectronic devices are individually fixed, each optoelectronic device comprising at least one photodiode for capturing signals relating to an image pixel.
[0003] Il est connu d'inclure, dans un dispositif électronique, un système de protection du dispositif électronique contre les décharges électrostatiques (ESD, sigle anglais pour ElectroStatic Discharge), notamment les décharges électrostatiques susceptibles de se produire au cours du procédé de fabrication et de manipulation du dispositif électronique. It is known to include, in an electronic device, a system for protecting the electronic device against electrostatic discharges (ESD, acronym for ElectroStatic Discharge), in particular electrostatic discharges liable to occur at during the manufacturing process and handling of the electronic device.
[0004] Toutefois, pour certaines applications, il peut ne pas être possible de prévoir un tel système de protection dans un dispositif optoélectronique, notamment dans le cas où le dispositif optoélectronique correspond à un pixel d'affichage ou à un capteur de pixel d'image, afin de limiter les dimensions du dispositif optoélectronique. [0004] However, for certain applications, it may not be possible to provide such a protection system in an optoelectronic device, in particular in the case where the optoelectronic device corresponds to a display pixel or to a pixel sensor of image, in order to limit the dimensions of the optoelectronic device.
Résumé de l'invention Summary of the invention
[0005] Ainsi, un objet d'un mode de réalisation est de pallier au moins en partie les inconvénients des systèmes et procédés de protection de dispositifs optoélectroniques contre les ESD décrits précédemment. [0005] Thus, an object of an embodiment is to at least partially overcome the drawbacks of the systems and methods for protecting optoelectronic devices against ESDs described above.
[0006] Un autre objet d'un mode de réalisation est de protéger le dispositif optoélectronique contre les ESD au cours de la manipulation du dispositif optoélectronique. Another object of an embodiment is to protect the optoelectronic device against ESDs during handling of the optoelectronic device.
[0007] Un autre objet d'un mode de réalisation est que les dispositifs optoélectroniques puissent être formés à une échelle industrielle et à bas coût. Another object of an embodiment is that the optoelectronic devices can be formed on an industrial scale and at low cost.
[0008] Un mode de réalisation prévoit un procédé de protection de dispositifs optoélectroniques contre les décharges électrostatiques, chaque dispositif optoélectronique comprenant un circuit optoélectronique comprenant au moins un composant optoélectronique parmi une diode électroluminescente ou une photodiode, le procédé comprenant la formation d'une première plaque, comprenant plusieurs exemplaires du circuit optoélectronique, la fixation de la première plaque à un support, la séparation des dispositifs optoélectroniques les uns des autres, et le retrait du support de plusieurs dispositifs optoélectroniques parmi lesdits dispositifs optoélectroniques par un système de préhension, dans lequel le système de préhension comprend au moins un système de protection des dispositifs optoélectroniques contre les décharges électrostatiques. [0008] One embodiment provides a method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light emitting diode or a photodiode, the method comprising forming a first plate, comprising several copies of the optoelectronic circuit, fixing the first plate to a support, separating the optoelectronic devices from each other, and removing the support from several optoelectronic devices among said optoelectronic devices by a gripping system, in which the gripping system comprises at minus a system for protecting optoelectronic devices against electrostatic discharges.
[0009] Selon un mode de réalisation, le système de préhension comprend un préhenseur comprenant des logements adaptés à recevoir les dispositifs optoélectroniques, et avant l'étape de retrait desdits plusieurs dispositifs optoélectroniques du support par le préhenseur, l'un des dispositifs optoélectroniques autre que lesdits plusieurs dispositifs optoélectroniques, appelé dispositif sacrificiel, est mis en contact avec le préhenseur avant que lesdits plusieurs dispositifs optoélectroniques ne viennent au contact du préhenseur . [0009] According to one embodiment, the gripping system comprises a gripper comprising housings adapted to receive the optoelectronic devices, and before the step of removing said several optoelectronic devices from the support by the gripper, one of the optoelectronic devices other that said several optoelectronic devices, called sacrificial device, is brought into contact with the gripper before said several optoelectronic devices come into contact with the gripper.
[0010] Selon un mode de réalisation, le système de préhension comprend un élément saillant par rapport au préhenseur venant au contact du dispositif sacrificiel lors d'un rapprochement relatif entre le préhenseur et le support avant que lesdits plusieurs dispositifs optoélectroniques ne viennent au contact du préhenseur. According to one embodiment, the gripping system comprises a protruding element with respect to the gripper coming into contact with the sacrificial device during a relative approach between the gripper and the support before said several optoelectronic devices come into contact with the gripper.
[0011] Selon un mode de réalisation, le système de protection comprend une plaque reliée au préhenseur par une liaison élastique . [0011] According to one embodiment, the protection system comprises a plate connected to the gripper by an elastic connection.
[0012] Selon un mode de réalisation, la liaison élastique est conductrice électriquement. [0012] According to one embodiment, the elastic connection is electrically conductive.
[0013] Selon un mode de réalisation, le procédé comprend la déformation locale du support pour rapprocher ledit dispositif sacrificiel du préhenseur par rapport auxdits plusieurs dispositifs optoélectroniques. [0013] According to one embodiment, the method comprises the local deformation of the support to bring said sacrificial device closer to the gripper with respect to said several optoelectronic devices.
[0014] Selon un mode de réalisation, le système de protection comprend un actionneur adapté à déformer localement le supportAccording to one embodiment, the protection system comprises an actuator adapted to locally deform the support.
[0015] Selon un mode de réalisation, la première plaque est fixée au support par l'intermédiaire d'une colle conductrice. [0016] Selon un mode de réalisation, chaque dispositif optoélectronique comprend un circuit électronique comprenant au moins un composant électronique, le circuit optoélectronique étant fixé au circuit électronique. [0015] According to one embodiment, the first plate is fixed to the support by means of a conductive adhesive. [0016] According to one embodiment, each optoelectronic device comprises an electronic circuit comprising at least one electronic component, the optoelectronic circuit being fixed to the electronic circuit.
[0017] Un mode de réalisation prévoit également un système de préhension pour la mise en oeuvre du procédé tel que défini précédemment, comprenant le système de protection des dispositifs optoélectroniques contre les décharges électrostatiques . [0017] One embodiment also provides a gripping system for implementing the method as defined above, comprising the system for protecting optoelectronic devices against electrostatic discharges.
[0018] Selon un mode de réalisation, le système de protection comprend une plaque reliée au préhenseur par une liaison élastique . [0018] According to one embodiment, the protection system comprises a plate connected to the gripper by an elastic connection.
[0019] Selon un mode de réalisation, le système de protection comprend un actionneur adapté à déformer localement le support[0019] According to one embodiment, the protection system comprises an actuator adapted to locally deform the support.
Brève description des dessins Brief description of the drawings
[0020] Ces caractéristiques et avantages, ainsi que d'autres, seront exposés en détail dans la description suivante de modes de réalisation particuliers faite à titre non limitatif en relation avec les figures jointes parmi lesquelles : These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the accompanying figures, among which:
[0021] la figure 1 est une vue en coupe, partielle et schématique, d'un exemple d'un dispositif optoélectronique à diodes électroluminescentes ; Figure 1 is a sectional view, partial and schematic, of an example of an optoelectronic device with light-emitting diodes;
[0022] la figure 2 est une vue en coupe de la structure obtenue à une étape d'un exemple d'un procédé de fabrication du dispositif optoélectronique de la figure 1 ; FIG. 2 is a sectional view of the structure obtained in a step of an example of a method of manufacturing the optoelectronic device of FIG. 1;
[0023] la figure 3 est une vue en coupe de la structure obtenue à une étape d'un mode de réalisation d'un procédé de placement de dispositifs optoélectroniques mettant en oeuvre une protection contre les ESD ; FIG. 3 is a sectional view of the structure obtained in a step of an embodiment of a method for placing optoelectronic devices implementing protection against ESD;
[0024] la figure 4 est une vue en coupe de la structure obtenue à une autre étape du procédé ; [0025] la figure 5 est une vue en coupe de la structure obtenue à une autre étape du procédé ; Figure 4 is a sectional view of the structure obtained in another step of the process; Figure 5 is a sectional view of the structure obtained in another step of the process;
[0026] la figure 6 est une vue en coupe de la structure obtenue à une autre étape du procédé ; Figure 6 is a sectional view of the structure obtained in another step of the process;
[0027] la figure 7 est une vue en coupe de la structure obtenue à une étape d'un autre mode de réalisation d'un procédé de placement de dispositifs optoélectroniques mettant en oeuvre une protection contre les ESD ; FIG. 7 is a sectional view of the structure obtained in a step of another embodiment of a method for placing optoelectronic devices implementing protection against ESD;
[0028] la figure 8 est une vue en coupe de la structure obtenue à une autre étape du procédé ; Figure 8 is a sectional view of the structure obtained in another step of the process;
[0029] la figure 9 est une vue en coupe de la structure obtenue à une autre étape du procédé ; Figure 9 is a sectional view of the structure obtained in another step of the process;
[0030] la figure 10 est une vue en coupe de la structure obtenue à une autre étape du procédé ; et Figure 10 is a sectional view of the structure obtained in another step of the process; and
[0031] la figure 11 est une vue en coupe, partielle et schématique, d'un mode de réalisation plus détaillé de la structure d'un pixel d'affichage. Figure 11 is a sectional view, partial and schematic, of a more detailed embodiment of the structure of a display pixel.
Description des modes de réalisation Description of the embodiments
[0032] De mêmes éléments ont été désignés par de mêmes références dans les différentes figures. En particulier, les éléments structurels et/ou fonctionnels communs aux différents modes de réalisation peuvent présenter les mêmes références et peuvent disposer de propriétés structurelles, dimensionnelles et matérielles identiques. Par souci de clarté, seuls les étapes et éléments utiles à la compréhension des modes de réalisation décrits ont été représentés et sont détaillés . The same elements have been designated by the same references in the various figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties. For the sake of clarity, only the steps and elements useful for understanding the embodiments described have been shown and are detailed.
[0033] Dans la description qui suit, lorsque l'on fait référence à des qualificatifs de position absolue, tels que les termes "avant", "arrière", "haut", "bas", "gauche", "droite", etc., ou relative, tels que les termes "dessus", "dessous", "supérieur", "inférieur", etc., ou à des qualificatifs d'orientation, tels que les termes "horizontal", "vertical", etc., il est fait référence sauf précision contraire à l'orientation des figures ou à un dispositif optoélectronique dans une position normale d'utilisation. Sauf précision contraire, les expressions "environ", "approximativement", "sensiblement", et "de l'ordre de" signifient à 10 % près, de préférence à 5 % près. En outre, on considère ici que les termes "isolant" et "conducteur" signifient respectivement "isolant électriquement" et "conducteur électriquement". In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "rear", "top", "bottom", "left", "right", etc., or relative, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made unless otherwise specified to the orientation of the figures or to an optoelectronic device in a normal position of use. Unless otherwise specified, the expressions "approximately", "approximately", "substantially", and "of the order of" mean within 10%, preferably within 5%. In addition, it is considered here that the terms "insulator" and "conductor" mean respectively "electrically insulating" and "electrically conductive".
[0034] Des modes de réalisation de systèmes et de procédés de protection contre les ESD vont être décrits pour des dispositifs optoélectroniques correspondant à des pixels d'affichage. Toutefois, il est clair que ces modes de réalisation peuvent être mis en oeuvre pour d'autres types de dispositifs optoélectroniques, par exemple des capteurs de pixels d'image. Embodiments of ESD protection systems and methods will be described for optoelectronic devices corresponding to display pixels. However, it is clear that these embodiments can be implemented for other types of optoelectronic devices, for example image pixel sensors.
[0035] La figure 1 est une vue en coupe, partielle et schématique, d'un mode de réalisation d'un pixel d'affichage Pix. Le pixel d'affichage Pix comprend du bas vers le haut en figure 1 : Figure 1 is a sectional view, partial and schematic, of an embodiment of a display pixel Pix. The display pixel Pix includes from bottom to top in Figure 1:
- un circuit électronique 10, appelé circuit de commande par la suite ; et - an electronic circuit 10, referred to below as a control circuit; and
- un circuit optoélectronique 30. - an optoelectronic circuit 30.
[0036] Le circuit de commande 10 comprend une face inférieure 12 et une face supérieure 14 opposée à la face inférieure 12, les faces 12 et 14 étant de préférence parallèles. Le circuit de commande 10 comprend en outre des plots conducteurs 16 sur la face inférieure 12. Le circuit de commande 10 peut comprendre un substrat semiconducteur 18, un empilement 20 de couches isolantes recouvrant le substrat 18 et des pistes conductrices 22 de plusieurs niveaux de métallisation formées entre les couches isolantes de l'empilement 20 et connectées par des vias conducteurs non représentés. Le circuit de commande 10 peut en outre comprendre des composants électroniques, non représentés en figure 1, notamment des transistors, formés dans et/ou sur le substrat 18. Une couche isolante, non représentée, peut recouvrir le substrat semiconducteur 18 du côté opposé à l'empilement 20 et délimiter la face inférieure 12 du circuit de commande 10. Le circuit de commande 10 peut en outre comprendre des vias conducteurs traversants, non représentés, s'étendant dans le substrat 18, sur toute l'épaisseur du substrat 18 pour relier les plots 16 à la face avant du substrat 18. Le substrat semiconducteur 18 est, par exemple, un substrat en silicium, notamment en silicium monocristallin. Les composants électroniques peuvent alors comprendre des transistors à effet de champ à grille isolée, également appelés transistors MOS. Selon un autre mode de réalisation, le substrat 18 peut correspondre à un substrat non semiconducteur. Les composants électroniques peuvent alors comprendre des transistors en couches minces, également appelés transistors TFT (sigle anglais pour Thin-Film transistor), formés sur le substrat 18. The control circuit 10 comprises a lower face 12 and an upper face 14 opposite to the lower face 12, the faces 12 and 14 preferably being parallel. The control circuit 10 further comprises conductive pads 16 on the lower face 12. The control circuit 10 may include a semiconductor substrate 18, a stack 20 of insulating layers covering the substrate 18 and tracks. conductors 22 of several metallization levels formed between the insulating layers of the stack 20 and connected by conductive vias not shown. The control circuit 10 can further comprise electronic components, not shown in FIG. 1, in particular transistors, formed in and / or on the substrate 18. An insulating layer, not shown, can cover the semiconductor substrate 18 on the side opposite to it. the stack 20 and delimit the lower face 12 of the control circuit 10. The control circuit 10 can also comprise through-conductive vias, not shown, extending in the substrate 18, over the entire thickness of the substrate 18 for connecting the pads 16 to the front face of the substrate 18. The semiconductor substrate 18 is, for example, a silicon substrate, in particular monocrystalline silicon. The electronic components can then include insulated gate field effect transistors, also called MOS transistors. According to another embodiment, the substrate 18 can correspond to a non-semiconductor substrate. The electronic components can then comprise thin film transistors, also called TFT transistors (acronym for Thin-Film transistor), formed on the substrate 18.
[0037] Le circuit optoélectronique 30 est fixé à la face supérieure 14 du circuit de commande 10. Il comprend un support 32 sur lequel sont formées des diodes électroluminescentes DEL, de préférence au moins trois diodes électroluminescentes. Le circuit optoélectronique 30 peut comprendre des blocs photoluminescents 34 recouvrant les diodes électroluminescentes DEL du côté opposé au circuit de commande 10. Chaque bloc photoluminescent 34 est en vis-à-vis d'au moins l'une des diodes électroluminescentes DEL. The optoelectronic circuit 30 is fixed to the upper face 14 of the control circuit 10. It comprises a support 32 on which are formed light emitting diodes LEDs, preferably at least three light emitting diodes. The optoelectronic circuit 30 may comprise photoluminescent blocks 34 covering the light emitting diodes LEDs on the side opposite to the control circuit 10. Each photoluminescent block 34 faces at least one of the light emitting diodes LEDs.
[0038] Le circuit optoélectronique 30 comprend des éléments conducteurs 36, situés dans le support 32, et connectés aux électrodes des diodes électroluminescentes DEL. Le circuit optoélectronique 30 est relié électriquement au circuit de commande 10 par des plots conducteurs, qui peuvent correspondre aux éléments conducteurs 36, et qui sont au contact de plots conducteurs du circuit de commande 10. The optoelectronic circuit 30 comprises conductive elements 36, located in the support 32, and connected to LED electrodes. The optoelectronic circuit 30 is electrically connected to the control circuit 10 by conductive pads, which may correspond to the conductive elements 36, and which are in contact with conductive pads of the control circuit 10.
[0039] De préférence, le circuit optoélectronique 30 comprend seulement les diodes électroluminescentes DEL et les éléments conducteurs 36 de ces diodes électroluminescentes DEL et le circuit de commande 10 comprend la totalité des composants électroniques nécessaires à la commande des diodes électroluminescentes DEL du circuit optoélectroniques 30. A titre de variante, le circuit optoélectronique 30 peut également comprendre d'autres composants électroniques en plus des diodes électroluminescentes DEL. Preferably, the optoelectronic circuit 30 comprises only the light-emitting diodes LEDs and the conductive elements 36 of these light-emitting diodes LEDs and the control circuit 10 comprises all the electronic components necessary for controlling the light-emitting diodes LEDs of the optoelectronic circuit 30 Alternatively, optoelectronic circuit 30 may also include other electronic components in addition to light emitting diodes LEDs.
[0040] La figure 2 est une vue en coupe d'une structure 40 obtenue à une étape d'un exemple de procédé de fabrication du pixel d'affichage Pix de la figure 1. La structure 40 comprend une plaque 42 de circuits intégrés comprenant plusieurs exemplaires du circuit de commande 10 et une plaque 44 comprenant plusieurs exemplaires du circuit optoélectronique 30, trois exemplaires du circuit de commande 10 et du circuit optoélectronique 30 étant représentés. Chaque plaque 42, 44 peut être fabriquée séparément. En particulier, la plaque 42 comprenant les circuits de commande 10 peut être fabriquée en mettant en oeuvre des techniques de fabrication de transistors CMOS. La plaque 44 comprenant les circuits optoélectroniques 30 peut alors être fixée à la plaque 42 comprenant les circuits de commande 10, par exemple par collage moléculaire hybride. Le procédé de fabrication peut comprendre la fixation temporaire de la plaque 42 à un support 46, également appelé poignée, au moyen d'une couche de colle 48. Selon un mode de réalisation, la couche de colle 48 est conductrice électriquement. L'utilisation de la poignée 46 peut notamment être prévue après une étape de fixation de la plaque 42 à la plaque 44 suivie d'une étape d'amincissement du substrat 18. Une étape de découpe peut alors être mise en oeuvre pour individualiser les pixels d'affichage Pix. La découpe est réalisée du côté de la face supérieure 49 de la structure 40 qui est la face de la plaque 44 la plus éloignée de la poignée 46. Les pixels d'affichage Pix peuvent ensuite être retirés du support 46, et fixés à un autre support, par exemple un circuit imprimé, pour obtenir un écran d'affichage. FIG. 2 is a sectional view of a structure 40 obtained at a step of an example of a method of manufacturing the display pixel Pix of FIG. 1. The structure 40 comprises a plate 42 of integrated circuits comprising several examples of the control circuit 10 and a plate 44 comprising several examples of the optoelectronic circuit 30, three examples of the control circuit 10 and of the optoelectronic circuit 30 being shown. Each plate 42, 44 can be manufactured separately. In particular, the plate 42 comprising the control circuits 10 can be fabricated using CMOS transistor fabrication techniques. The plate 44 comprising the optoelectronic circuits 30 can then be fixed to the plate 42 comprising the control circuits 10, for example by hybrid molecular bonding. The manufacturing method may include the temporary attachment of the plate 42 to a support 46, also called a handle, by means of a layer of adhesive 48. According to one embodiment, the layer of adhesive 48 is electrically conductive. The use of the handle 46 can in particular be provided after a step of fixing the plate 42 to the plate 44 followed by a step of thinning the substrate 18. A cutting step can then be implemented to individualize the display pixels Pix. The cutout is made on the side of the upper face 49 of the structure 40 which is the face of the plate 44 furthest from the handle 46. The display pixels Pix can then be removed from the support 46, and fixed to another. support, for example a printed circuit, to obtain a display screen.
[0041] Un écran d'affichage peut comprendre de 10 à 109 pixels d'affichage Pix. Chaque pixel d'affichage Pix peut occuper en vue de dessus une surface comprise entre 1 pm2 et 100 mm2. L'épaisseur de chaque pixel d'affichage Pix peut être comprise entre 1 pm et 6 mm. A display screen can comprise from 10 to 10 9 pixels of display Pix. Each display pixel Pix can occupy, in top view, an area of between 1 μm 2 and 100 mm 2 . The thickness of each display pixel Pix can be between 1 µm and 6 mm.
[0042] Des décharges électrostatiques peuvent se produire au cours de la manipulation des pixels d'affichage Pix une fois individualisés . Electrostatic discharges can occur during the manipulation of the display pixels Pix once individualized.
[0043] Selon un mode de réalisation, un système de protection des pixels d'affichage Pix contre les ESD est prévu, après la séparation des pixels d'affichage Pix, lors de la manipulation des pixels d'affichage. La manipulation des pixels d'affichage peut être réalisée au moyen d'un préhenseur qui peut venir saisir simultanément plusieurs pixels d'affichage pour les déposer sur un support, par exemple un circuit imprimé d'un écran d'affichage. Une ESD peut se produire lorsque le préhenseur vient au contact des pixels d'affichage. Selon un mode de réalisation, le système de protection comprend des moyens pour, avant que le préhenseur ne vienne au contact des pixels d'affichage, mettre en contact un pixel d'affichage sacrificiel avec le préhenseur. De ce fait, si une décharge ESD se produit, ce sera au travers du pixel d'affichage sacrificiel. Ce pixel d'affichage sacrificiel peut ensuite être écarté de façon systématique qu'une ESD se soit produite ou non. According to one embodiment, a system for protecting the display pixels Pix against ESD is provided, after the separation of the display pixels Pix, during the manipulation of the display pixels. The manipulation of the display pixels can be carried out by means of a gripper which can simultaneously pick up several display pixels to deposit them on a support, for example a printed circuit of a display screen. ESD can occur when the gripper comes in contact with display pixels. According to one embodiment, the protection system comprises means for, before the gripper comes into contact with the display pixels, bringing a sacrificial display pixel into contact with the gripper. Therefore, if an ESD discharge occurs, it will be through the sacrificial display pixel. This sacrificial display pixel can then be systematically ruled out whether or not an ESD has occurred.
[0044] Les figures 3 à 6 sont des vues en coupe, partielles et schématiques, d'un mode de réalisation d'un système de préhension 50 de pixels d'affichage Pix, comprenant un système de protection 52 contre les ESD, à des étapes successives d'un transport des pixels d'affichage Pix. Figures 3 to 6 are sectional views, partial and schematic, of an embodiment of a gripping system 50 of display pixels Pix, comprising a protection system 52 against ESD, at successive stages of a transport of the display pixels Pix.
[0045] Le système de préhension 50 comprend un préhenseur 54 ayant des logements 56, chaque logement 56 pouvant recevoir un pixel d'affichage Pix. Le préhenseur 54 comprend des moyens, non représentés, pour maintenir le pixel d'affichage Pix dans le logement 56 correspondant lorsque le préhenseur 54 est placé au contact ou à proximité du logement 56. Les moyens de maintien peuvent comprendre des ventouses, par exemple des ventouses à vide. Sur les figures 3 à 6, on a représenté chaque logement 56 délimité par un rebord 58. Toutefois, les rebords 58 peuvent ne pas être présents. Le système de protection 52 est disposé dans l'un des logements 56 et comprend une plaque 60 reliée par une liaison élastique 62 au logement 56. Dans le logement 56 où le système de protection 52 est prévu, il peut ne pas y avoir de moyens de maintien. Le système de préhension 50, notamment la plaque 60, la liaison élastique 62, et le préhenseur 54 sont au moins en partie en un matériau conducteur de façon à permettre la circulation de charges électriques. The gripping system 50 comprises a gripper 54 having housings 56, each housing 56 being able to receive a display pixel Pix. The gripper 54 comprises means, not shown, for maintaining the display pixel Pix in the corresponding housing 56 when the gripper 54 is placed in contact with or near the housing 56. The holding means may comprise suction cups, for example suction cups. vacuum suction cups. In Figures 3 to 6, there is shown each housing 56 delimited by a rim 58. However, the rims 58 may not be present. The protection system 52 is disposed in one of the housings 56 and comprises a plate 60 connected by an elastic connection 62 to the housing 56. In the housing 56 where the protection system 52 is provided, there may not be any means. maintenance. The gripping system 50, in particular the plate 60, the elastic connection 62, and the gripper 54 are at least partly made of a conductive material so as to allow the circulation of electric charges.
[0046] Selon un mode de réalisation, le transport des pixels d'affichage Pix comprend les étapes suivantes : According to one embodiment, the transport of the display pixels Pix comprises the following steps:
- placement du préhenseur 54 en vis-à-vis des pixels d'affichage Pix encore fixés à la poignée 46 après l'étape de séparation des pixels d'affichage Pix (figure 3), chaque pixel d'affichage Pix étant situé en face de l'un des logements 56, le pixel d'affichage disposé en face du logement 56 dans lequel est prévu le système de protection 52 correspond au pixel sacrificiel Pix' décrit précédemment ; - placement of the gripper 54 vis-à-vis the display pixels Pix still attached to the handle 46 after the step of separating the display pixels Pix (Figure 3), each display pixel Pix being located opposite of one of the housings 56, the display pixel arranged in front of the housing 56 in which is provided the protection system 52 corresponds to the sacrificial pixel Pix 'described above;
- rapprochement entre le préhenseur 54 et la poignée 46 (figure 4) jusqu'à ce que la plaque 60 vienne au contact du pixel sacrificiel Pix', les autres pixels d'affichage Pix n'étant alors pas au contact du préhenseur 54. Une ESD peut alors se produire au travers du pixel sacrificiel Pix'. L'utilisation d'une couche de colle conductrice 48 permet de façon avantageuse de créer un chemin d'évacuation des charges électriques du préhenseur 54 vers la poignée 46 en passant par le pixel sacrificiel Pix' ; - approximation between the gripper 54 and the handle 46 (FIG. 4) until the plate 60 comes into contact with the sacrificial pixel Pix ', the other display pixels Pix then not being in contact with the gripper 54. A ESD can then occur through the sacrificial pixel Pix '. The use of a conductive adhesive layer 48 advantageously makes it possible to create a path for evacuating the electrical charges from the gripper 54 to the handle 46, passing through the sacrificial pixel Pix ';
- poursuite du rapprochement entre le préhenseur 54 et la poignée 46 (figure 5) jusqu'à ce que chaque pixel d'affichage Pix soit situé dans le logement 56 correspondant et actionnement des moyens de maintien, la liaison élastique 62 se déformant pour permettre le déplacement de la plaque 60 et du pixel sacrificiel Pix' ; et - Continuation of the approach between the gripper 54 and the handle 46 (Figure 5) until each display pixel Pix is located in the corresponding housing 56 and actuation of the holding means, the elastic link 62 deforming to allow the displacement of the plate 60 and of the sacrificial pixel Pix '; and
- libération des pixels d'affichage Pix par rapport à la poignée 46 (figure 6), par exemple par détérioration locale par laser de la couche de colle 48 ou par arrachement, la force d'aspiration du système de préhension 50 sur les pixels d'affichage Pix étant supérieure à la force de retenue de la couche de colle 48, éventuellement à l'exception du pixel sacrificiel Pix', et éloignement du préhenseur 54 par rapport à la poignée 46, les pixels d'affichage Pix restant attachés au préhenseur 54 grâce aux moyens de maintien. - release of the display pixels Pix relative to the handle 46 (FIG. 6), for example by local deterioration by laser of the layer of glue 48 or by tearing, the suction force of the gripping system 50 on the pixels d 'Pix display being greater than the retaining force of the adhesive layer 48, possibly with the exception of the sacrificial pixel Pix', and distance of the gripper 54 from the handle 46, the display pixels Pix remaining attached to the gripper 54 thanks to the holding means.
[0047] Des étapes ultérieures du procédé peuvent comprendre le déplacement du préhenseur 54, munis des pixels d'affichage Pix, jusqu'à un support, et le dépôt des pixels d'affichage Pix sur le support. Subsequent steps of the method may include moving the gripper 54, provided with the display pixels Pix, to a support, and depositing the display pixels Pix on the support.
[0048] Les figures 7 à 10 sont des vues en coupe, partielles et schématiques, d'un autre mode de réalisation d'un système de préhension 70 de pixels d'affichage Pix, comprenant un système de protection 72 contre les ESD, à des étapes successives d'un transport des pixels d'affichage Pix. Figures 7 to 10 are sectional views, partial and schematic, of another embodiment of a system gripping 70 of display pixels Pix, comprising a protection system 72 against ESD, at successive stages of a transport of the display pixels Pix.
[0049] Le système de préhension 70 comprend l'ensemble des éléments du système de préhension 50 représenté sur les figures 3 à 6 à l'exception du système de protection 52 qui est remplacé par le système de protection 72 qui comprend un élément déformable 74 disposé du côté de la poignée 46 opposé au pixel sacrificiel Pix' et adapté à déformer localement la poignée 46 lorsqu'il est actionné. Dans le présent mode de réalisation, la poignée 46 peut être déformée localement. Selon un mode de réalisation, la poignée 46 peut correspondre à un film, par exemple en polytéréphtalate d'éthylène (PET) ou en polypropylène, recouvert d'un adhésif, par exemple une colle acrylique. Selon un autre mode de réalisation, la poignée peut correspondre à un substrat en silicium aminci. La poignée 46 a, par exemple, une épaisseur comprise entre 50 pm et 300 pm. Le système de protection 72 peut comprendre un actionneur piézoélectrique. The gripping system 70 comprises all the elements of the gripping system 50 shown in Figures 3 to 6 with the exception of the protection system 52 which is replaced by the protection system 72 which comprises a deformable element 74 disposed on the side of the handle 46 opposite the sacrificial pixel Pix 'and adapted to locally deform the handle 46 when it is actuated. In the present embodiment, the handle 46 can be locally deformed. According to one embodiment, the handle 46 may correspond to a film, for example of polyethylene terephthalate (PET) or of polypropylene, covered with an adhesive, for example an acrylic glue. According to another embodiment, the handle may correspond to a thinned silicon substrate. The handle 46 has, for example, a thickness of between 50 µm and 300 µm. The protection system 72 may include a piezoelectric actuator.
[0050] Selon un mode de réalisation, le transport des pixels d'affichage Pix comprend les étapes suivantes : According to one embodiment, the transport of the display pixels Pix comprises the following steps:
- placement du préhenseur 54 en vis-à-vis des pixels d'affichage Pix encore fixés à la poignée 46 après l'étape de séparation des pixels d'affichage Pix (figure 7), chaque pixel d'affichage Pix étant situé en face de l'un des logements 56, l'élément déformable 74 n'étant pas actionné de sorte que la poignée 46 n'est pas déformée localement par l'élément déformable 74 ; - Placement of the gripper 54 vis-à-vis the display pixels Pix still attached to the handle 46 after the step of separating the display pixels Pix (FIG. 7), each display pixel Pix being located opposite of one of the housings 56, the deformable element 74 not being actuated so that the handle 46 is not locally deformed by the deformable element 74;
- actionnement du système de protection 72 de sorte que l'élément déformable 74 vient appuyer contre la poignée 46 pour obtenir une déformation locale de la poignée 46 (figure 8), ce qui entraîne un rapprochement relatif seulement du pixel sacrificiel Pix' par rapport au préhenseur 54 alors que la position relative entre chacun des autres pixels d'affichage Pix et le préhenseur 54 n'est pas modifiée. Le déplacement du pixel sacrificiel Pix' entre l'état non déformé de l'élément déformable 74 et l'état déformé de l'élément déformable 74 peut être compris entre 1 pm et 1 mm ; - actuation of the protection system 72 so that the deformable element 74 comes to bear against the handle 46 to obtain a local deformation of the handle 46 (FIG. 8), which results in a relative approximation only of the sacrificial pixel Pix 'with respect to the gripper 54 while the relative position between each of the other display pixels Pix and the gripper 54 is not modified. The displacement of the sacrificial pixel Pix 'between the undeformed state of the deformable element 74 and the deformed state of the deformable element 74 can be between 1 μm and 1 mm;
- rapprochement entre le préhenseur 54 et la poignée 46 (figure 9) jusqu'à ce que le préhenseur 54 vienne au contact du pixel sacrificiel Pix', les autres pixels d'affichage Pix n'étant alors pas au contact du préhenseur 54. Une ESD peut alors se produire au travers du pixel sacrificiel Pix' ; et- Approach between the gripper 54 and the handle 46 (FIG. 9) until the gripper 54 comes into contact with the sacrificial pixel Pix ', the other display pixels Pix then not being in contact with the gripper 54. A ESD can then occur through the sacrificial pixel Pix '; and
- poursuite du rapprochement entre le préhenseur 54 et la poignée 46 jusqu'à ce que chaque pixel d'affichage Pix soit situé dans le logement 56 correspondant (figure 10) alors que l'élément déformable 72 est désactivé de sorte que la poignée 46 revient à une position d'équilibre et actionnement des moyens de maintien. - continuation of the approach between the gripper 54 and the handle 46 until each display pixel Pix is located in the corresponding housing 56 (FIG. 10) while the deformable element 72 is deactivated so that the handle 46 returns in a position of equilibrium and actuation of the holding means.
[0051] Le procédé se poursuit par la libération des pixels d'affichage Pix par rapport à la poignée 46, par exemple par détérioration locale par laser de la couche de colle 48 ou par arrachement, la force d'aspiration du système de préhension 50 sur les pixels d'affichage Pix étant supérieure à la force de retenue de la couche de colle 48, éventuellement à l'exception du pixel sacrificiel Pix', et éloignement du préhenseur 54 par rapport à la poignée 46, les pixels d'affichage Pix restant attachés au préhenseur 54 grâce aux moyens de maintien. Des étapes ultérieures du procédé peuvent comprendre le déplacement relatif entre le préhenseur 54, munis des pixels d'affichage Pix, jusqu'à un support, et le dépôt des pixels d'affichage Pix sur le support. The method continues with the release of the display pixels Pix relative to the handle 46, for example by local deterioration by laser of the adhesive layer 48 or by tearing, the suction force of the gripping system 50 on the display pixels Pix being greater than the holding force of the adhesive layer 48, possibly with the exception of the sacrificial pixel Pix ', and the distance of the gripper 54 from the handle 46, the display pixels Pix remaining attached to the gripper 54 by virtue of the holding means. Subsequent steps of the method may comprise the relative movement between the gripper 54, provided with the display pixels Pix, up to a medium, and the deposition of the display pixels Pix on the medium.
[0052] Un avantage des modes de réalisation des procédés de transport décrits précédemment en relation avec les figures 3 à 6 et 7 à 10 est qu'ils permettent le transport et le placement simultanés de plusieurs pixels d'affichage. [0053] La figure 11 est une vue en coupe, partielle et schématique, d'un mode de réalisation plus détaillé du pixel d'affichage Pix. An advantage of the embodiments of the transport methods described above in relation to Figures 3 to 6 and 7 to 10 is that they allow the simultaneous transport and placement of several display pixels. FIG. 11 is a partial and schematic sectional view of a more detailed embodiment of the display pixel Pix.
[0054] Selon un mode de réalisation, le circuit de commande[0054] According to one embodiment, the control circuit
10 du pixel d'affichage Pix comprend de bas en haut en figure10 of the display pixel Pix comprises from bottom to top in figure
11 : 11:
- le substrat semiconducteur 18, par exemple du silicium monocristallin, une couche isolante 78 du côté de la face inférieure 12 et les deux plots conducteurs 16 ; the semiconductor substrate 18, for example monocrystalline silicon, an insulating layer 78 on the side of the lower face 12 and the two conductive pads 16;
- des transistors MOS 80, formés dans et sur le substrat 18 ;- MOS transistors 80, formed in and on the substrate 18;
- l'empilement 20 de couches isolantes, par exemple en oxyde de silicium et/ou en nitrure de silicium, recouvrant le substrat 18 et les pistes conductrices 22 de plusieurs niveaux de métallisation formées entre les couches isolantes de l'empilement donc notamment des plots 82 exposés sur la face supérieure 14 du circuit électronique 10, les pistes conductrices 22 du premier niveau de métallisation pouvant être en silicium polycristallin et former notamment les grilles des transistors MOS 80 et les pistes conductrices 22 des autres niveaux de métallisation pouvant être des pistes métalliques, par exemple en aluminium, en argent, en cuivre ou en zinc ; et the stack 20 of insulating layers, for example made of silicon oxide and / or silicon nitride, covering the substrate 18 and the conductive tracks 22 with several metallization levels formed between the insulating layers of the stack, therefore in particular pads 82 exposed on the upper face 14 of the electronic circuit 10, the conductive tracks 22 of the first metallization level possibly being in polysilicon and in particular forming the gates of the MOS transistors 80 and the conductive tracks 22 of the other metallization levels possibly being metal tracks , for example aluminum, silver, copper or zinc; and
- des vias 84 conducteurs et isolés latéralement, également appelés TSV (sigle anglais pour Through Silicon Vias) traversant le substrat 18 et reliant les plots 16 à des plots 90 du premier niveau de métallisation de l'empilement 20. - conductive and laterally insulated vias 84, also called TSV (acronym for Through Silicon Vias) crossing the substrate 18 and connecting the pads 16 to pads 90 of the first metallization level of the stack 20.
[0055] Selon un mode de réalisation, le circuit optoélectronique 30 du pixel d'affichage Pix comprend de bas en haut en figure 11 : According to one embodiment, the optoelectronic circuit 30 of the display pixel Pix comprises from bottom to top in FIG. 11:
- le support 32 comprenant une face inférieure 86 au contact de la face supérieure 14 et comprenant des plots conducteurs 88 exposés sur la face inférieure 86, au contact des plots 82, et une structure isolante multicouches 92, par exemple en oxyde de silicium et en nitrure de silicium, s'étendant entre les plots 88 et recouvrant les plots 88 et comprenant des ouvertures 93 exposant des portions des plots 88 ; - the support 32 comprising a lower face 86 in contact with the upper face 14 and comprising conductive pads 88 exposed on the lower face 86, in contact with the pads 82, and a multilayer insulating structure 92, for example made of silicon oxide and silicon nitride, extending between the pads 88 and covering the pads 88 and comprising openings 93 exposing portions of the pads 88;
- des microfils ou nanofils 94, appelés fils par la suite (six fils étant représentés), chaque fil 94 étant en contact avec l'un des plots 88 au travers de l'une des ouvertures 93 ; - Microwires or nanowires 94, called threads hereinafter (six threads being shown), each thread 94 being in contact with one of the pads 88 through one of the openings 93;
- une couche isolante 96 s'étendant sur les flancs latéraux d'une portion inférieure de chaque fil 94 et s'étendant sur la couche isolante 92 entre les fils 94 ; an insulating layer 96 extending over the lateral sides of a lower portion of each wire 94 and extending over the insulating layer 92 between the wires 94;
- une coque 98 comprenant un empilement de couches semiconductrices recouvrant une portion supérieure de chaque fil 94 et s'étendant sur la couche isolante 96 entre les fils 94, la coque 98 comprenant notamment une couche active qui est la couche depuis laquelle est émise la majorité du rayonnement fourni par la diode électroluminescente et comportant par exemple des moyens de confinement, tels que des puits quantiques multiples ; a shell 98 comprising a stack of semiconductor layers covering an upper portion of each wire 94 and extending over the insulating layer 96 between the wires 94, the shell 98 notably comprising an active layer which is the layer from which the majority is emitted radiation supplied by the light-emitting diode and comprising, for example, confinement means, such as multiple quantum wells;
- une couche 100 conductrice et réfléchissante, s'étendant sur la coque 98 entre les fils 94 ; a conductive and reflective layer 100, extending over the shell 98 between the wires 94;
- une couche 102 formant une électrode recouvrant, pour chaque fil 94, la coque 98 et s'étendant, en outre, sur la couche conductrice 100 entre les fils 94, la couche d'électrode 102 étant adaptée à laisser passer le rayonnement électromagnétique émis par les diodes électroluminescentes et étant composée d'un matériau transparent et conducteur tel que de l'oxyde d'indium-étain (ou ITO, acronyme anglais pour Indium Tin Oxide), de l'oxyde de zinc dopé à l'aluminium ou au gallium, ou du graphène ; a layer 102 forming an electrode covering, for each wire 94, the shell 98 and extending, in addition, on the conductive layer 100 between the wires 94, the electrode layer 102 being adapted to pass the emitted electromagnetic radiation by light-emitting diodes and being composed of a transparent and conductive material such as indium-tin oxide (or ITO, acronym for Indium Tin Oxide), zinc oxide doped with aluminum or gallium, or graphene;
- les blocs photoluminescents 34 recouvrant certains ensembles de diodes électroluminescentes DEL ou des blocs transparents au rayonnement émis par les diodes électroluminescentes, chaque bloc photoluminescent comprenant des luminophores adaptés, lorsqu'ils sont excités par la lumière émis par les diodes électroluminescentes DEL associées, à émettre de la lumière à une longueur d'onde différente de la longueur d'onde de la lumière émise par les diodes électroluminescentes DEL associées ; - the photoluminescent blocks 34 covering certain assemblies of light-emitting diodes LEDs or blocks transparent to the radiation emitted by the light emitting diodes, each photoluminescent block comprising phosphors adapted, when excited by the light emitted by the associated light emitting diodes LEDs, to emit light at a wavelength different from the wavelength wave of light emitted by associated light emitting diodes LEDs;
- une couche isolante 106 recouvrant la face supérieure de chaque bloc 34, la couche isolante 106 pouvant ne pas être présente ; an insulating layer 106 covering the upper face of each block 34, the insulating layer 106 possibly not being present;
- une couche de protection 108 recouvrant les couches isolantes 106, les faces latérales des blocs 34 et la couche d'électrode 102 entre les blocs 104 ; a protective layer 108 covering the insulating layers 106, the side faces of the blocks 34 and the electrode layer 102 between the blocks 104;
- des murs 110 entre les blocs 104, chaque mur 110 pouvant comprendre un coeur 112 entouré d'un revêtement 114 réfléchissant à la longueur d'onde du rayonnement émis par les blocs photoluminescents 34 et/ou les diodes électroluminescentes DEL ; - walls 110 between the blocks 104, each wall 110 possibly comprising a core 112 surrounded by a coating 114 reflecting at the wavelength of the radiation emitted by the photoluminescent blocks 34 and / or the light-emitting diodes LEDs;
- un filtre de couleur 116 recouvrant au moins certains des blocs photoluminescents 34 ; et a color filter 116 covering at least some of the photoluminescent blocks 34; and
- une couche d'encapsulation 118 recouvrant l'ensemble de la structure . an encapsulation layer 118 covering the entire structure.
[0056] Chaque fil 94 a par exemple un diamètre moyen, correspondant par exemple au diamètre du disque ayant la même aire que la section droite du fil 94, compris entre 5 nm et 5 pm, de préférence entre 100 nm et 2 pm, plus préférentiellement entre 200 nm et 1,5 pm et une hauteur supérieure ou égale supérieure à 1 fois, de préférence supérieure ou égale à 3 fois et encore plus préférentiellement supérieure ou égale à 5 fois le diamètre moyen, notamment supérieure à 500 nm, de préférence comprise entre 1 pm et 50 pm. Les fils 94 comprennent au moins un matériau semiconducteur. Le matériau semiconducteur peut être du silicium, du germanium, du carbure de silicium, un composé III-V, par exemple du GaN, AIN, InN, InGaN, AlGaN ou AlInGaN, un composé II-VI ou une combinaison d'au moins deux de ces composés . Each wire 94 has for example an average diameter, corresponding for example to the diameter of the disc having the same area as the cross section of the wire 94, between 5 nm and 5 μm, preferably between 100 nm and 2 μm, more preferably between 200 nm and 1.5 μm and a height greater than or equal to greater than 1 time, preferably greater than or equal to 3 times and even more preferably greater than or equal to 5 times the mean diameter, in particular greater than 500 nm, preferably between 1 pm and 50 pm. The wires 94 include at least one material semiconductor. The semiconductor material can be silicon, germanium, silicon carbide, a III-V compound, for example GaN, AIN, InN, InGaN, AlGaN or AlInGaN, a II-VI compound or a combination of at least two of these compounds.
[0057] Selon un mode de réalisation, les diodes électroluminescentes DEL sont adaptées à émettre de la lumière bleue, c'est-à-dire un rayonnement dont la longueur d'onde est dans la plage de 430 nm à 490 nm. Selon un mode de réalisation, la première longueur d'onde correspond à de la lumière verte et est dans la plage de 510 nm à 570 nm. Selon un mode de réalisation, la deuxième longueur d'onde correspond à de la lumière rouge et est dans la plage de 600 nm à 720 nm.According to one embodiment, the light-emitting diodes LEDs are adapted to emit blue light, that is to say radiation whose wavelength is in the range of 430 nm to 490 nm. According to one embodiment, the first wavelength corresponds to green light and is in the range of 510 nm to 570 nm. According to one embodiment, the second wavelength corresponds to red light and is in the range of 600 nm to 720 nm.
Selon un autre mode de réalisation, les diodes électroluminescentes DEL sont par exemple adaptées à émettre un rayonnement dans l'ultraviolet. Selon un mode de réalisation, la première longueur d'onde correspond à de la lumière bleue et est dans la plage de 430 nm à 490 nm. Selon un mode de réalisation, la deuxième longueur d'onde correspond à de la lumière verte et est dans la plage de 510 nm à 570 nm. Selon un mode de réalisation, la troisième longueur d'onde correspond à de la lumière rouge et est dans la plage deAccording to another embodiment, the light-emitting diodes LEDs are for example suitable for emitting radiation in the ultraviolet. According to one embodiment, the first wavelength corresponds to blue light and is in the range 430 nm to 490 nm. According to one embodiment, the second wavelength corresponds to green light and is in the range of 510 nm to 570 nm. According to one embodiment, the third wavelength corresponds to red light and is in the range of
600 nm à 720 nm. 600 nm to 720 nm.
[0058] Divers modes de réalisation et variantes ont été décrits. L'homme de l'art comprendra que certaines caractéristiques de ces divers modes de réalisation et variantes pourraient être combinées, et d'autres variantes apparaîtront à l'homme de l'art. En particulier, même si des modes de réalisation ont été décrits dans le cas de pixels d'affichage à diodes électroluminescentes comprenant des microfils ou nanofils, il est clair que ces modes de réalisation peuvent concerner un pixel d'affichage à diodes électroluminescentes comprenant des pyramides de taille micrométrique ou nanométrique, une pyramide étant une structure tridimensionnelle dont une partie est de forme pyramidale ou conique allongée. Cette structure pyramidale peut être tronquée, c'est-à-dire que le haut du cône est absent, laissant place à un plateau. La base de la pyramide est inscrite dans un polygone dont la dimension des côtés est de 100 nm à 10 pm, préférentiellement entre 1 pm et 3 pm. Le polygone formant la base de la pyramide peut être un hexagone. La hauteur de la pyramide entre la base de la pyramide et le sommet ou le plateau sommital varie de 100 nm à 20 pm, préférentiellement entre 1 pm et 10 pm. En outre, même si des modes de réalisation ont été décrits dans le cas de pixels d'affichage à diodes électroluminescentes comprenant des microfils ou nanofils, il est clair que ces modes de réalisation peuvent concerner un pixel d'affichage à diodes électroluminescentes planaires dans lequel chaque diode électroluminescente est formée par un empilement de couches semiconductrices planes. Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these various embodiments and variants could be combined, and other variants will be apparent to those skilled in the art. In particular, even if embodiments have been described in the case of light-emitting diode display pixels comprising microwires or nanowires, it is clear that these embodiments may relate to a light-emitting diode display pixel comprising pyramids. size micrometric or nanometric, a pyramid being a three-dimensional structure, part of which is of elongated pyramidal or conical shape. This pyramidal structure can be truncated, that is to say that the top of the cone is absent, leaving room for a plateau. The base of the pyramid is inscribed in a polygon whose side dimension is from 100 nm to 10 μm, preferably between 1 μm and 3 μm. The polygon forming the base of the pyramid can be a hexagon. The height of the pyramid between the base of the pyramid and the top or the top plate varies from 100 nm to 20 μm, preferably between 1 μm and 10 μm. Further, even though embodiments have been described in the case of light-emitting diode display pixels comprising microwires or nanowires, it is clear that these embodiments may relate to a planar light-emitting diode display pixel in which each light-emitting diode is formed by a stack of planar semiconductor layers.

Claims

REVENDICATIONS
1. Procédé de protection de dispositifs optoélectroniques1. Method of protection of optoelectronic devices
(Pix) contre les décharges électrostatiques, chaque dispositif optoélectronique comprenant un circuit optoélectronique (30) comprenant au moins un composant optoélectronique (DEL) parmi une diode électroluminescente ou une photodiode, le procédé comprenant la formation d'une première plaque (42, 44), comprenant plusieurs exemplaires du circuit optoélectronique, la fixation de la première plaque à un support (46), la séparation des dispositifs optoélectroniques les uns des autres, et le retrait du support de plusieurs dispositifs optoélectroniques parmi lesdits dispositifs optoélectroniques par un système de préhension (50 ; 70), dans lequel le système de préhension comprend au moins un système de protection (52 ; 72) des dispositifs optoélectroniques contre les décharges électrostatiques. (Pix) against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit (30) comprising at least one optoelectronic component (LED) among a light emitting diode or a photodiode, the method comprising forming a first plate (42, 44) , comprising several copies of the optoelectronic circuit, fixing the first plate to a support (46), separating the optoelectronic devices from each other, and removing the support from several optoelectronic devices among said optoelectronic devices by a gripping system ( 50; 70), in which the gripping system comprises at least one protection system (52; 72) of the optoelectronic devices against electrostatic discharges.
2. Procédé selon la revendication 1, dans lequel le système de préhension (50 ; 70) comprend un préhenseur (54) comprenant des logements (56) adaptés à recevoir les dispositifs optoélectroniques, et dans lequel avant l'étape de retrait desdits plusieurs dispositifs optoélectroniques (Pix) du support (46) par le préhenseur, l'un des dispositifs optoélectroniques (Pix') autre que lesdits plusieurs dispositifs optoélectroniques, appelé dispositif sacrificiel, est mis en contact avec le préhenseur avant que lesdits plusieurs dispositifs optoélectroniques ne viennent au contact du préhenseur. 2. The method of claim 1, wherein the gripping system (50; 70) comprises a gripper (54) comprising housings (56) adapted to receive the optoelectronic devices, and wherein before the step of removing said several devices optoelectronic devices (Pix) of the support (46) by the gripper, one of the optoelectronic devices (Pix ') other than the said several optoelectronic devices, called the sacrificial device, is brought into contact with the gripper before the said several optoelectronic devices come to the contact of the gripper.
3. Procédé selon la revendication 2, dans lequel le système de préhension (50) comprend un élément saillant (60) par rapport au préhenseur (54) venant au contact du dispositif sacrificiel (Pix') lors d'un rapprochement relatif entre le préhenseur et le support (46) avant que lesdits plusieurs dispositifs optoélectroniques (Pix) ne viennent au contact du préhenseur. 3. Method according to claim 2, wherein the gripping system (50) comprises a projecting element (60) relative to the gripper (54) coming into contact with the sacrificial device (Pix ') during a relative approach between the gripper. and the support (46) before said several optoelectronic devices (Pix) do not come into contact with the gripper.
4. Procédé selon la revendication 3, dans lequel le système de protection (52) comprend une plaque (60) reliée au préhenseur (54) par une liaison élastique (62). 4. The method of claim 3, wherein the protection system (52) comprises a plate (60) connected to the gripper (54) by an elastic connection (62).
5. Procédé selon la revendication 4, dans lequel la liaison élastique (62) est conductrice électriquement. 5. The method of claim 4, wherein the elastic link (62) is electrically conductive.
6. Procédé selon la revendication 2, comprenant la déformation locale du support (46) pour rapprocher ledit dispositif sacrificiel (Pix') du préhenseur (54) par rapport auxdits plusieurs dispositifs optoélectroniques. 6. Method according to claim 2, comprising the local deformation of the support (46) to bring said sacrificial device (Pix ') closer to the gripper (54) with respect to said several optoelectronic devices.
7. Procédé selon la revendication 6, dans lequel le système de protection (72) comprend un actionneur (74) adapté à déformer localement le support (46). 7. The method of claim 6, wherein the protection system (72) comprises an actuator (74) adapted to locally deform the support (46).
8. Procédé selon l'une quelconque des revendications 1 à 7, dans lequel la première plaque (44) est fixée au support (46) par l'intermédiaire d'une colle conductrice (48).8. Method according to any one of claims 1 to 7, wherein the first plate (44) is fixed to the support (46) by means of a conductive adhesive (48).
9. Procédé selon l'une quelconque des revendications 1 à 8, dans lequel chaque dispositif optoélectronique comprend un circuit électronique (10) comprenant au moins un composant électronique (80), le circuit optoélectronique (30) étant fixé au circuit électronique. 9. Method according to any one of claims 1 to 8, wherein each optoelectronic device comprises an electronic circuit (10) comprising at least one electronic component (80), the optoelectronic circuit (30) being fixed to the electronic circuit.
10. Système de préhension (50 ; 70) pour la mise en oeuvre du procédé selon l'une quelconque des revendications 1 à 9, comprenant le système de protection (52 ; 72) des dispositifs optoélectroniques (Pix) contre les décharges électrostatiques. 10. Gripping system (50; 70) for implementing the method according to any one of claims 1 to 9, comprising the protection system (52; 72) of the optoelectronic devices (Pix) against electrostatic discharges.
11. Système de préhension selon la revendication 10, dans lequel le système de protection (52) comprend une plaque (60) reliée au préhenseur (54) par une liaison élastique (62). 11. The gripping system of claim 10, wherein the protection system (52) comprises a plate. (60) connected to the gripper (54) by an elastic connection (62).
12. Système de préhension selon la revendication 10, dans lequel le système de protection (72) comprend un actionneur (74) adapté à déformer localement le support (46). 12. Gripping system according to claim 10, wherein the protection system (72) comprises an actuator (74) adapted to locally deform the support (46).
EP20789134.2A 2019-11-08 2020-10-12 Method for protecting an optoelectronic device against electrostatic discharges Pending EP4055628A1 (en)

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FR1912567A FR3103057B1 (en) 2019-11-08 2019-11-08 PROCESS FOR PROTECTING AN OPTOELECTRONIC DEVICE AGAINST ELECTROSTATIC DISCHARGES
PCT/EP2020/078618 WO2021089277A1 (en) 2019-11-08 2020-10-12 Method for protecting an optoelectronic device against electrostatic discharges

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Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004537158A (en) * 2001-02-08 2004-12-09 インターナショナル・ビジネス・マシーンズ・コーポレーション Chip transfer method and apparatus
US9773750B2 (en) * 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US11894350B2 (en) * 2014-10-31 2024-02-06 e Lux, Inc. Fluidic assembly enabled mass transfer for microLED displays
WO2016122725A1 (en) * 2015-01-30 2016-08-04 Technologies Llc Sxaymiq Micro-light emitting diode with metal side mirror
US10381328B2 (en) * 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
GB2541970B (en) * 2015-09-02 2020-08-19 Facebook Tech Llc Display manufacture
US10546796B2 (en) * 2016-02-18 2020-01-28 Apple Inc. Backplane structure and process for microdriver and micro LED
CN107437523B (en) * 2016-05-26 2020-01-31 群创光电股份有限公司 Pick and place apparatus and method of actuating the same
TWI674682B (en) * 2016-09-07 2019-10-11 優顯科技股份有限公司 Optoelectronic semiconductor device and manufacturing method thereof
DE102016221281A1 (en) * 2016-10-28 2018-05-03 Osram Opto Semiconductors Gmbh METHOD FOR TRANSFERRING SEMICONDUCTOR CHIPS AND TRANSFER TOOL
JP7007827B2 (en) * 2017-07-28 2022-01-25 日東電工株式会社 Die bond film, dicing die bond film, and semiconductor device manufacturing method
TW202008558A (en) * 2018-07-23 2020-02-16 飛傳科技股份有限公司 Die transfer method and die transfer system thereof
US10950485B2 (en) * 2019-04-17 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer

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US20220406628A1 (en) 2022-12-22
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