EP3987452A4 - Scalable integrated circuit with synaptic electronics and cmos integrated memristors - Google Patents

Scalable integrated circuit with synaptic electronics and cmos integrated memristors Download PDF

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Publication number
EP3987452A4
EP3987452A4 EP20827694.9A EP20827694A EP3987452A4 EP 3987452 A4 EP3987452 A4 EP 3987452A4 EP 20827694 A EP20827694 A EP 20827694A EP 3987452 A4 EP3987452 A4 EP 3987452A4
Authority
EP
European Patent Office
Prior art keywords
memristors
scalable
integrated circuit
integrated
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20827694.9A
Other languages
German (de)
French (fr)
Other versions
EP3987452A1 (en
Inventor
Jose Cruz-Albrecht
Timothy Derosier
Narayan Srinivasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/447,210 external-priority patent/US11501143B2/en
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of EP3987452A1 publication Critical patent/EP3987452A1/en
Publication of EP3987452A4 publication Critical patent/EP3987452A4/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/04—Architecture, e.g. interconnection topology
    • G06N3/049—Temporal neural networks, e.g. delay elements, oscillating neurons or pulsed inputs
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • G06N3/088—Non-supervised learning, e.g. competitive learning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
EP20827694.9A 2019-06-20 2020-06-16 Scalable integrated circuit with synaptic electronics and cmos integrated memristors Pending EP3987452A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/447,210 US11501143B2 (en) 2013-10-11 2019-06-20 Scalable integrated circuit with synaptic electronics and CMOS integrated memristors
PCT/US2020/037891 WO2020257168A1 (en) 2019-06-20 2020-06-16 Scalable integrated circuit with synaptic electronics and cmos integrated memristors

Publications (2)

Publication Number Publication Date
EP3987452A1 EP3987452A1 (en) 2022-04-27
EP3987452A4 true EP3987452A4 (en) 2023-06-28

Family

ID=74037186

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20827694.9A Pending EP3987452A4 (en) 2019-06-20 2020-06-16 Scalable integrated circuit with synaptic electronics and cmos integrated memristors

Country Status (3)

Country Link
EP (1) EP3987452A4 (en)
CN (1) CN113994346A (en)
WO (1) WO2020257168A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113313240B (en) * 2021-08-02 2021-10-15 成都时识科技有限公司 Computing device and electronic device
CN115831190B (en) * 2023-02-16 2023-05-09 华中科技大学 Self-write-stop operation circuit and self-write-stop operation method of memristor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160364643A1 (en) * 2012-03-08 2016-12-15 Hrl Laboratories Llc Scalable integrated circuit with synaptic electronics and cmos integrated memristors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8712940B2 (en) * 2011-05-31 2014-04-29 International Business Machines Corporation Structural plasticity in spiking neural networks with symmetric dual of an electronic neuron
FR3007867B1 (en) * 2013-06-26 2018-02-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives ARTIFICIAL NEURONE COMPRISING A RESISTIVE MEMORY
US20150278682A1 (en) * 2014-04-01 2015-10-01 Boise State University Memory controlled circuit system and apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160364643A1 (en) * 2012-03-08 2016-12-15 Hrl Laboratories Llc Scalable integrated circuit with synaptic electronics and cmos integrated memristors

Also Published As

Publication number Publication date
CN113994346A (en) 2022-01-28
EP3987452A1 (en) 2022-04-27
WO2020257168A1 (en) 2020-12-24

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RIC1 Information provided on ipc code assigned before grant

Ipc: G06N 3/088 20230101ALI20230523BHEP

Ipc: G06N 3/065 20230101ALI20230523BHEP

Ipc: G06N 3/049 20230101ALI20230523BHEP

Ipc: G11C 13/00 20060101ALI20230523BHEP

Ipc: G11C 11/54 20060101ALI20230523BHEP

Ipc: G06N 3/063 20060101AFI20230523BHEP