EP3969642A4 - High growth rate deposition for group iii/v materials - Google Patents

High growth rate deposition for group iii/v materials Download PDF

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Publication number
EP3969642A4
EP3969642A4 EP20804988.2A EP20804988A EP3969642A4 EP 3969642 A4 EP3969642 A4 EP 3969642A4 EP 20804988 A EP20804988 A EP 20804988A EP 3969642 A4 EP3969642 A4 EP 3969642A4
Authority
EP
European Patent Office
Prior art keywords
materials
group iii
growth rate
high growth
rate deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20804988.2A
Other languages
German (de)
French (fr)
Other versions
EP3969642A1 (en
Inventor
Nikhil Jain
Jason M. Jewell
Chaowei Wang
Ji Wu
Emmett Edward Perl
Claudio Andres CANIZARES
Ling Zhang
Brendan M. Kayes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Utica Leaseco LLC
Original Assignee
Utica Leaseco LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/412,328 external-priority patent/US20190272994A1/en
Application filed by Utica Leaseco LLC filed Critical Utica Leaseco LLC
Publication of EP3969642A1 publication Critical patent/EP3969642A1/en
Publication of EP3969642A4 publication Critical patent/EP3969642A4/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
EP20804988.2A 2019-05-14 2020-05-13 High growth rate deposition for group iii/v materials Pending EP3969642A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/412,328 US20190272994A1 (en) 2009-10-14 2019-05-14 High growth rate deposition for group iii/v materials
PCT/US2020/032676 WO2020232123A1 (en) 2019-05-14 2020-05-13 High growth rate deposition for group iii/v materials

Publications (2)

Publication Number Publication Date
EP3969642A1 EP3969642A1 (en) 2022-03-23
EP3969642A4 true EP3969642A4 (en) 2023-09-27

Family

ID=73289279

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20804988.2A Pending EP3969642A4 (en) 2019-05-14 2020-05-13 High growth rate deposition for group iii/v materials

Country Status (2)

Country Link
EP (1) EP3969642A4 (en)
WO (1) WO2020232123A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180019117A1 (en) * 2009-10-14 2018-01-18 Alta Devices, Inc. High growth rate deposition for group iii/v materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4742012A (en) * 1984-11-27 1988-05-03 Toa Nenryo Kogyo K.K. Method of making graded junction containing amorphous semiconductor device
US8772628B2 (en) * 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US9018517B2 (en) * 2011-11-07 2015-04-28 International Business Machines Corporation Silicon heterojunction photovoltaic device with wide band gap emitter
TWI640648B (en) * 2017-11-24 2018-11-11 行政院原子能委員會核能硏究所 FABRICATION METHOD OF InGaP EPI-LAYER GROWN BY MOCVD

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180019117A1 (en) * 2009-10-14 2018-01-18 Alta Devices, Inc. High growth rate deposition for group iii/v materials

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CAO D S ET AL: "Use of tertiarybutylphosphine for OMVPE growth of (AlGa)o.51 InP", JOURNAL OF ELECTRONIC MATERIALS, SPRINGER US, BOSTON, vol. 20, no. 1, January 1991 (1991-01-01), pages 97 - 101, XP035178942, ISSN: 1543-186X, DOI: 10.1007/BF02651971 *
JAIN NIKHIL ET AL: "GaLnAsP Solar Cells Grown by Hydride Vapor Phase Epitaxy for One-Sun & Low-Concentration III-V/Si Photovoltaics", 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE, 25 June 2017 (2017-06-25), pages 46 - 48, XP033454417, DOI: 10.1109/PVSC.2017.8520931 *
PERL EMMETT E ET AL: "Development of High-Bandgap AlGaInP Solar Cells Grown by Organometallic Vapor-Phase Epitaxy", IEEE JOURNAL OF PHOTOVOLTAICS, IEEE, vol. 6, no. 3, May 2016 (2016-05-01), pages 770 - 776, XP011607124, ISSN: 2156-3381, [retrieved on 20160419], DOI: 10.1109/JPHOTOV.2016.2537543 *

Also Published As

Publication number Publication date
EP3969642A1 (en) 2022-03-23
WO2020232123A1 (en) 2020-11-19

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