EP3966608A1 - Mirror device for an interferometer device, interferometer device and method for producing a mirror device - Google Patents
Mirror device for an interferometer device, interferometer device and method for producing a mirror deviceInfo
- Publication number
- EP3966608A1 EP3966608A1 EP20723095.4A EP20723095A EP3966608A1 EP 3966608 A1 EP3966608 A1 EP 3966608A1 EP 20723095 A EP20723095 A EP 20723095A EP 3966608 A1 EP3966608 A1 EP 3966608A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- mirror
- layer
- recess
- mirror device
- mirror layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 56
- 125000006850 spacer group Chemical group 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 239000000615 nonconductor Substances 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J2003/1226—Interference filters
- G01J2003/1247—Tuning
Definitions
- Mirror device for an interferometer device, interferometer device and method for producing a mirror device
- the present invention relates to a mirror device for a
- Interferometer device an interferometer device and a method for producing a mirror device.
- spectral filters which are variable (tunable) over several wavelengths and are only permeable for certain wavelengths, for example by means of microelectromechanical construction (MEMS technology), a MEMS technology
- Miniaturization for example with Fabry-Perot interferometers (FPI), can be realized.
- a cavity with two essentially plane-parallel, highly reflective mirrors with a spacing (cavity length) of the order of magnitude of optical wavelengths can have a strong transmission only for those wavelengths which, with the cavity length, correspond to an integral multiple of half the wavelength.
- electrostatic or piezoelectric actuation can change the distance between the mirrors of the interferometer, which can result in a spectrally tunable filter element.
- Refractive index of the low refractive index material should be as close as possible to 1, for example in the case of gases or vacuum. Since plane parallelism is also important for such mirrors (layers), support structures between the mirror layers prove to be advantageous in order to keep the distance between the individual layers within a mirror of the FPI constant (distance between the high-index layers). Usually, parts of the upper high-index layer can be formed as support structures. These can extend from the upper high-index layer to the lower.
- US Pat. No. 7,733,495 B2 describes a multilayer mirror and a Fabry-Perot interferometer. A sidewall can extend between the high index layers.
- the present invention provides a mirror device for a
- Interferometer device according to claim 1
- an interferometer device according to claim 9 and a method for producing a mirror device according to claim 10.
- the idea on which the present invention is based consists in specifying a mirror device for an interferometer device which has improved spacing structures between mirror layers in a
- the spacer structures can be used to maintain a constant distance between the mirror layers of a mirror device and at the same time as a spacer for the mirror device from another element, for example an electrode, a substrate or another
- Interferometer means a first mirror layer and a second
- Mirror layer spacing forms a gap between the first and second mirror layers, and wherein the gap comprises a gas or vacuum; at least one spacer structure which extends at least partially between the first and the second mirror layer, and wherein the spacer structure comprises a material that is the same or different from the first and / or second mirror layer.
- the vertical extension can be perpendicular to the planar extension plane or also inclined, for example by an angle of 70 ° or 80 °, relative to the planar extension plane, that is to say deviating from a vertical direction.
- the spacer structure can comprise a material that is the same or different from the first and / or second mirror layer.
- the spacing structure comprises the same material as one or both mirror layers, this can still be detectable in the finished component (mirror device), since the spacing structure and the mirror layers can be produced separately from one another, i.e. they do not act as an overall component and can also differ from such a component.
- the spacer structure and the mirror layers can comprise silicon (poly-Si), for example, and for each mirror layer and also for the spacer structure, can
- Material structure for example crystallinity, in the case of separately produced structures, can demonstrably differ from a continuous structure made of the same material. Therefore, mirror layers and a spacer structure made of the same crystalline material, which have been produced separately, can demonstrably differ in their material structure from a structure produced (grown) throughout in one step.
- the spacing structure comprises side walls which differ from a planar
- Extending direction of the first and second mirror layers vertically or extending by a certain angle deviating from a vertical direction.
- the spacer structure protrudes into at least one of the two mirror layers.
- the spacing structure comprises a core between the side walls and a base, wherein the side walls and the bottom comprise a different material than the core.
- the side walls and the base comprise an electrically insulating material.
- the spacer structure protrudes through at least one of the two mirror layers and projects beyond an outer side of the first and / or second mirror layer by at least a thickness of one of the mirror layers.
- the mirror device comprises a plurality of spacing structures which form a hexagonal lattice when viewed from above on a planar top side of the second mirror layer.
- the first and / or second mirror layer protrudes perpendicularly from the planar extension direction of the first mirror layer in a direction away from the recess.
- the interferometer device comprises a substrate; a first mirror device and a second mirror device, at least one of which comprises a mirror device according to the invention, which are arranged above the substrate and one above the other by a first distance from one another, at least the first mirror device being arranged to be movable relative to the second mirror device; and an actuation device by means of which at least the first and / or the second mirror device can be moved.
- Mirror device providing a first sacrificial layer and / or a substrate; applying a first mirror layer to the first sacrificial layer and / or to the substrate; applying a second sacrificial layer on the first mirror layer; forming a recess at least in the second sacrificial layer which extends at least up to the first mirror layer; introducing a material for a spacer structure into the recess,; applying a second mirror layer on the second sacrificial layer and over the recess; and at least a partial removal of the first and / or the second sacrificial layer.
- the method can advantageously also be distinguished by the features mentioned in connection with the mirror device and their advantages, and vice versa.
- an electrical insulator layer is arranged in the recess and on top of the second sacrificial layer and then the material for a core of the
- Spacer structure introduced into the recess so that the recess is filled.
- the material of the recess or at least the material for the core is thinned back in order to produce a flat connection with regions laterally adjoining the recess.
- 3a-d show a schematic side view of the mirror device during partial steps of a method for producing the same according to a further exemplary embodiment of the present invention
- FIG. 4 shows a schematic side view of the interferometer device according to an exemplary embodiment of the present invention.
- 5 shows a schematic block diagram of method steps of a
- FIG. 1a-f show schematic side views of mirror devices according to several exemplary embodiments of the present invention.
- a mirror device 1 is in each case for one
- Interferometer device 10 which comprises a first mirror layer 2 and a second mirror layer 3, which are arranged parallel on top of one another and spaced apart from one another by a mirror layer distance d23, the mirror layer distance d23 forming a gap 5 between the first and second mirror layers (2, 3), and wherein the space 5 comprises a gas or a vacuum.
- the mirror device 1 comprises at least one
- Spacer structure 4 between the first and the second mirror layer (2, 3), which extends from a planar extension direction of the first and second mirror layer (2, 3) vertically or by a certain angle of comprises side walls 4a extending differently in a vertical direction, and wherein the spacer structure 4 is one of the first and / or second
- Mirror layer (2, 3) comprises the same or different material.
- the spacing structures 4 shown can be subject to lateral deformations, for example as a result of the internal tensile stress (mechanical) in the mirror layers. Since the spacer structures advantageously comprise a different material than the mirror layers, they can be mechanically and advantageously also electrically adapted to the requirements of the spacer structure, for example in order to be able to better maintain a tensile stress advantageously set in the layers (due to the reduced relaxation of the
- Spacing structures whereby the optically usable surface (planarity of the mirror at a defined distance) can be increased. Furthermore, the spacing structures can terminate essentially evenly with an upper side of the mirror layer, which cannot produce an elevation beyond the mirror layer (hardly or no topography is produced), which is advantageous for both
- Process management as well as for the optical and mechanical properties can possibly be subsequent further (mirror) layers (consequently little or no bending of the subsequent layers of a further mirror can occur).
- the material for the spacing structure can form a flat surface with a tolerance with an upper side of the mirror layer which faces away from the first mirror layer.
- the tolerance for the flat end can be a deviation of at most the thickness of the mirror layer.
- the spacer structure 4 advantageously extends only between the two mirror layers 2 and 3 (can touch them) without extending into (the plane of extent) of these mirror layers 2 and 3 and can be both in the side wall 4a and in the Inner area (core) comprise the same material, advantageously also only one material.
- the spacing structure 4 can be shaped similarly to that in FIG. 1 a with the difference that the spacing structure 4 is additionally at least partially (FIG. 1e) or completely (FIG. 1c) in or through the
- first mirror layer 2 can extend.
- the spacer structure 4 can be located below the first mirror layer 2, where the spacer structure 4 can protrude beyond the first mirror layer 2 downwards perpendicularly to the planar extension direction, forming a spacer AH.
- a plurality of spacer structures 4 can also be present, which can form a hexagonal grid or other geometric shapes (not shown) in a plan view of a planar upper side 3b of the second mirror layer 3.
- the spacer structure 4 can partially be in the
- Extension plane extend into the first mirror layer 2, for example with an anchor area, which can have a laterally smaller extension than the spacing structure 4 between the mirror layers 2 and 3.
- This shape can be provided according to the sequence of method steps from FIG. 3 (the more precise Reference follows in Fig. 3).
- the spacer below the first mirror layer 2 can accordingly comprise the material of the first mirror layer 2 with a recess in the direction of the second mirror layer 3, in which the spacer structure 4 can be enclosed and mechanically stabilized against lateral tensile forces.
- the spacer structure 4 can comprise a core 4d within the side wall 4a and a base 4c, wherein the base 4c and the side walls 4a can be made of the same material and the core 4d can comprise a different material.
- the outer dimensions of the spacer structures 4 in FIG. 1b advantageously correspond to FIG. in FIG. 1d that of FIG. 1c; and in Fig. lf that of Fig. le.
- the spacer structure can consequently be deposited separately from the mirror layers and a base for depositing the second
- Form mirror layer The embodiment can also apply to other
- Mirror layers are expanded, advantageously using further mirror layers and sacrificial layers.
- the gas (mixture) in the space 5, for example air, or a vacuum can represent (replace) a low refractive index layer and a
- the mirror layers 2 and 3 can, for example, silicon as a high-index material with a refractive index of, for example, 3.5.
- silicon germanium or silicon carbide can also be used, or other materials that contain
- Sacrificial layer etching processes can be compatible (resistant). If air is used as the low refractive index material, a large
- Refractive index difference to the high refractive index material can be achieved and a spectrally broadband, highly reflective mirror device can be generated.
- Mirror device a distance of the mirror (devices) from one
- the spacer structures 4 can stabilize the mirror layers against one another.
- the material of the spacer structure 4 can be, for example, a semiconductor material and / or the same material as at least one of the mirror layers.
- the process of depositing the material of the spacer structure can be adapted to the mechanical and electrical properties (electrical conductivity, thermal, vertical electrical insulation of the mirror layers) of the mirror layers and the manufacturing process.
- properties can also be set independently of the requirements placed on the mirror layers. For example, doping and / or crystallinity can be variable.
- Mirror layers can differ in their material by doping or crystallinity, but can also comprise a different semiconductor material.
- the spacer structure can be electrically insulating, such as the material of the core. From a mechanical point of view, this spacing structure can be very stable and break-proof and hardly allow any deformation of the mirrors (membranes / layers), in particular their spacing, for example little or no notch effect
- the spacer structures can be designed as at least partially laterally continuous wall structures and / or as column structures, for example as
- Honeycomb structures By reducing or not giving in, a predetermined
- the spacing of the mirror layers is retained.
- the spacing structures can be formed almost point-like in plan view, which can lead to a minimization of optical losses.
- the material in the core 4d can comprise a highly refractive material (compared to the intermediate region with gas, gas mixture or vacuum), similar to one of the mirror layers.
- the spacers AH anti-stiction bumps
- the spacers AH can reduce the contact area in the event of the mirror layer 2 coming into contact with an underlying structure and thus reduce the adhesion, which can prevent irreversible adhesion of the mirror layer to an underlying structure.
- Mirror layer must be greater than a thickness of the mirror layer (first) itself.
- the protrusion is particularly preferably greater than a thickness of the second sacrificial layer.
- the spacers AH can thus be made from one electric
- 2a-f show a schematic side view of the mirror device during a method for producing this according to a
- a first sacrificial layer O1 or a substrate (not shown) and possibly an intermediate layer between substrate and first mirror layer is provided (S1); application (S2) of a first mirror layer 2, advantageously flat, to the first sacrificial layer O1; applying (S3) a second sacrificial layer 02 on the first mirror layer 2; and a Forming (S4) a recess A at least in the second sacrificial layer 02, which extends at least as far as the first mirror layer 2, advantageously touching it.
- the cover layer eL can comprise an electrically insulating material.
- a material 4d for a spacer structure can be introduced (S5) into the recess A.
- the material 4d can be introduced into the recess A conforming to the surface area and, within the region of the recess A, comprise a step as an inner recess A1 in the material 4d.
- back thinning can be carried out according to FIG. 2c
- the cover layer eL can serve as a stop layer or there can be further layers which can serve as a stop layer.
- the cover layer eL and if necessary further layers, can be removed outside the recess A and the second sacrificial layer 02 can advantageously be exposed at the top.
- the material 4d and the cover layer eL can extend vertically beyond the second sacrificial layer 02 or can be planarized with the second sacrificial layer 02 (polishing, etching).
- a second mirror layer 3 can be applied (S6) to the second sacrificial layer 02 and over the recess A.
- the first and second sacrificial layers 01 and 02 can be at least partially removed (S7) and one Mirror device 1 with a space 5 between the two
- Embodiment of FIG. 1 can be produced in a similar manner.
- the recess A or further (smaller) recesses can be circular, elliptical or some other shape, for example elongated, in a plan view of a planar extension direction.
- the elliptical shape can be distinguished by better optical properties, in particular by a reduction in optical losses.
- the process sequences shown can be modified and multi-layer mirror devices with several low-refractive layers and high-refractive layers (mirror layers) can be formed.
- the spacing structures can then be continuous between the several
- first and the second sacrificial layer and such can be removed, for example by means of an etching hole
- the etch holes can be distributed in the first and / or second mirror layer (not shown) (selective etching).
- 3a-d show a schematic side view of the mirror device during partial steps of a method for producing the same according to a further exemplary embodiment of the present invention.
- the sub-steps can relate to a production of a mirror device as shown in FIG.
- a first sacrificial layer O1 which can be deposited on a carrier or substrate (not shown), for example, a
- Recess A2 are introduced.
- the material can then of the first mirror layer 2 are applied to the first sacrificial layer 01 and advantageously also (conformally) in the recess A2.
- a laterally smaller recess A1 can then be formed in the material of the first mirror layer within the recess A2 by conformal deposition, although this, depending on the layer thickness of the first mirror layer 2, can reach under the top of the first sacrificial layer O1 or above the height of a End the top of the first sacrificial layer (from the top).
- a second sacrificial layer 02 can be applied to the first mirror layer 2, which fill the smaller recess A1 in the first mirror layer 2.
- a recess can be formed in the second sacrificial layer 02 which extends over the
- Recess A2 from FIG. 3a can extend and can have an identical, smaller or greater lateral extent than recess A2.
- the recess A can also be completely shifted laterally from the recess A2.
- FIG 4 shows a schematic side view of the interferometer device according to an exemplary embodiment of the present invention.
- the interferometer device 10 can be a substrate S; a first
- the mirror devices SP1 and SP2 are arranged above the substrate S and one above the other by a first distance d12 away from one another, at least the first mirror device SP1 being arranged to be movable relative to the second mirror device SP2; and an actuation device by means of which at least the first and / or the second mirror device can be moved.
- the mirror devices SP1 and / or SP2 can according to the invention
- Spacer structures 4 with or without a protruding portion, i.e. the spacers AH, upwards or downwards (relative to the substrate) include.
- the spacers AH can be placed on the substrate or on other elements.
- the interferometer device can comprise an edge structure RS outside an optical region, wherein the mirror devices SP1 and SP2 can be clamped in the edge structure RS and can be contacted with a contact K through the latter. In the optical area, the mirror devices can be exposed and the light path can be influenced by diaphragms BL and anti-reflection layers AR on the substrate S.
- Interferometer device can be designed as a Fabry-Perot interferometer (FPI).
- the FPI can be produced by depositing several sacrificial layers, whereby a sacrificial layer can be deposited on the substrate S, then the first mirror device can be formed thereon, then a further sacrificial layer can be deposited on the first mirror device, and on this in turn a second
- the thickness of the further sacrificial layer can be used to set the first distance dl2 and can be set independently of the actuation gap, the actuation electrodes between substrate S and first mirror device SP1 forming the actuation gap.
- Such an FPI advantageously does not have to be on a travel path
- the interferometer device can be designed as a microelectromechanical component (MEMS), for example as a microspectrometer.
- MEMS microelectromechanical component
- FIG. 5 shows a schematic block diagram of method steps of a method according to an exemplary embodiment of the present invention.
- Embodiment has been fully described above, it is not limited to it, but can be modified in many ways.
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102019206758.1A DE102019206758A1 (en) | 2019-05-10 | 2019-05-10 | Mirror device for an interferometer device, interferometer device and method for producing a mirror device |
PCT/EP2020/061876 WO2020229180A1 (en) | 2019-05-10 | 2020-04-29 | Mirror device for an interferometer device, interferometer device and method for producing a mirror device |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3966608A1 true EP3966608A1 (en) | 2022-03-16 |
Family
ID=70480279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20723095.4A Withdrawn EP3966608A1 (en) | 2019-05-10 | 2020-04-29 | Mirror device for an interferometer device, interferometer device and method for producing a mirror device |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220221709A1 (en) |
EP (1) | EP3966608A1 (en) |
CN (1) | CN113785227A (en) |
DE (1) | DE102019206758A1 (en) |
WO (1) | WO2020229180A1 (en) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW567355B (en) * | 2003-04-21 | 2003-12-21 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
JP4784495B2 (en) | 2006-11-28 | 2011-10-05 | 株式会社デンソー | Optical multilayer mirror and Fabry-Perot interferometer having the same |
FI20095976A0 (en) * | 2009-09-24 | 2009-09-24 | Valtion Teknillinen | Micromechanically adjustable Fabry-Perot interferometer and method for its production |
JP2011191474A (en) * | 2010-03-15 | 2011-09-29 | Seiko Epson Corp | Wavelength variable interference filter, colorimetric sensor, colorimetric module, and method of manufacturing the wavelength variable interference filter |
KR20130091763A (en) * | 2010-08-17 | 2013-08-19 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | Actuation and calibration of a charge neutral electrode in an interferometric display device |
US20120194897A1 (en) * | 2011-01-27 | 2012-08-02 | Qualcomm Mems Technologies, Inc. | Backside patterning to form support posts in an electromechanical device |
FI125897B (en) * | 2011-06-06 | 2016-03-31 | Teknologian Tutkimuskeskus Vtt Oy | Micromechanically adjustable Fabry-Perot interferometer and method for its manufacture |
CN102360120B (en) * | 2011-09-30 | 2013-07-10 | 上海丽恒光微电子科技有限公司 | Digital micro-mirror device and forming method thereof |
FR3050526B1 (en) * | 2016-04-25 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | ELECTROMAGNETIC RADIATION DETECTION DEVICE WITH ENCAPSULATION STRUCTURE HAVING AT LEAST ONE INTERFERENTIAL FILTER |
US11474343B2 (en) * | 2016-11-20 | 2022-10-18 | Unispectral Ltd. | Tunable MEMS etalon device |
DE102018201965A1 (en) * | 2018-02-08 | 2019-08-08 | Robert Bosch Gmbh | Micromechanical mirror device, mirror system and method for producing a micromechanical mirror device |
WO2019149605A1 (en) * | 2018-02-01 | 2019-08-08 | Robert Bosch Gmbh | Micromechanical mirror device, mirror system, and method for producing a micromechanical mirror device |
-
2019
- 2019-05-10 DE DE102019206758.1A patent/DE102019206758A1/en active Pending
-
2020
- 2020-04-29 CN CN202080034778.8A patent/CN113785227A/en active Pending
- 2020-04-29 EP EP20723095.4A patent/EP3966608A1/en not_active Withdrawn
- 2020-04-29 WO PCT/EP2020/061876 patent/WO2020229180A1/en unknown
- 2020-04-29 US US17/609,578 patent/US20220221709A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DE102019206758A1 (en) | 2020-11-12 |
CN113785227A (en) | 2021-12-10 |
US20220221709A1 (en) | 2022-07-14 |
WO2020229180A1 (en) | 2020-11-19 |
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