EP3963640A1 - Procédé de fabrication de cellules solaires à hétérojonction de silicium avec une étape de stabilisation et section de ligne de fabrication pour l'étape de stabilisation - Google Patents

Procédé de fabrication de cellules solaires à hétérojonction de silicium avec une étape de stabilisation et section de ligne de fabrication pour l'étape de stabilisation

Info

Publication number
EP3963640A1
EP3963640A1 EP20726682.6A EP20726682A EP3963640A1 EP 3963640 A1 EP3963640 A1 EP 3963640A1 EP 20726682 A EP20726682 A EP 20726682A EP 3963640 A1 EP3963640 A1 EP 3963640A1
Authority
EP
European Patent Office
Prior art keywords
light
manufacturing
treatment
stabilization step
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20726682.6A
Other languages
German (de)
English (en)
Inventor
Steffen Frigge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meyer Burger Germany GmbH
Original Assignee
Meyer Burger Germany GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meyer Burger Germany GmbH filed Critical Meyer Burger Germany GmbH
Publication of EP3963640A1 publication Critical patent/EP3963640A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a manufacturing method for silicon heterojunction solar cells with at least one stabilization step, the stabilization step being carried out after amorphous silicon layers, and preferably transparent layers or even metallic contact materials, have previously been applied to crystalline silicon solar wafers, as well as a correspondingly equipped production line section.
  • Silicon heterojunction solar cells are high-performance solar cells (HJT solar cells for short) that achieve higher levels of efficiency than other solar cell types currently used in industry
  • Silicon material in particular amorphous silicon, deposited to form the solar cell detector.
  • amorphous silicon material is also deposited on the side of the solar cell opposite the emitter, for example to create a potential gradient across the solar cell and to feed charge carriers, i.e. electrons and holes produced with the photo effect, to the external contacts of the solar cell conduct.
  • charge carriers i.e. electrons and holes produced with the photo effect
  • thin undoped amorphous intermediate layers are deposited between the interfaces of the crystalline silicon and the other doped silicon layers.
  • Amorphous silicon has a larger band gap than crystalline silicon and can therefore convert short-wave light into electrical energy more effectively than crystalline silicon. In the combination of the two
  • Silicon materials can use the incident solar spectrum on earth more effectively than pure crystalline Si solar cells.
  • the HJT solar cells also have less
  • HJT solar cells can be damaged by excessively high temperatures in the manufacturing process, because the amorphous or nanocrystalline deposited layers change their structure or crystallize at temperatures of around 200 ° C and the solar cell thereby can cause irreversible damage.
  • manufacturing processes for HJT solar cells from the prior art only low temperatures below 200 ° C. are therefore usually used, for example in US 2015/0013758 A1.
  • metallic contacts for example from metal pastes and / or foil-wire electrodes, and to stabilize solar cell properties, higher temperatures would also be desirable in some cases, but the maximum possible
  • US Pat. No. 7,754,962 B2 also describes an advantageous stabilizing effect through a combination of lighting and tempering, with existing upper temperature limits not being allowed to be exceeded.
  • Stabilization step at the end of the manufacturing process the task of which is to stabilize initially high solar cell efficiencies and to prevent gradual deterioration or deterioration.
  • the object of the invention is therefore to find an efficient stabilization step that enables high solar cell efficiencies.
  • the object is achieved by manufacturing processes for silicon heterojunction, in which the stabilization step involves heating the solar cell to temperatures above 200 ° C. and a
  • Light quanta of different energies have different effects on the solar cell. According to the sunlight spectrum, radiation in the visible spectral range and in the adjacent areas, namely the near infrared range and the
  • Ultraviolet range known as light.
  • Light with a photon energy above 1.1 eV and corresponding to a wavelength below 1100 nm is in the working range of the silicon solar cell because the energy of the photons and the photoelectrons generated from them is greater than the band gap of crystalline silicon. Effects other than the generation of photoelectrons that are involved
  • a light dose of 8000 Ws / m 2 can be provided, for example, in that a radiation power density of 1000 W / m 2 acts for 8 s. If the same light output is concentrated on a smaller area, the light dose increases on the smaller area
  • a radiation power density of 1000W / m 2 is also referred to as 1 sun, because the earth is illuminated by the sun with such a radiation power density.
  • Stabilization means that degradation of performance parameters of the solar cell produced is reduced.
  • the performance parameters include the
  • the stabilization step also improves the initial one
  • the solar cell is illuminated with intense light. Since the effect of the light treatment usually runs faster with stronger lighting, the intensity of the lighting is selected as large as possible. In various exemplary embodiments, the intensity of the lighting is between 1 sun and 100 suns. Upper limits of illuminance result from the heating of the solar cell associated with the lighting and from the availability of suitable light sources.
  • the product of the lighting power density and the treatment time gives an effective light dose, for example irradiation with 1000 W / m 2 over a period of 10 s gives a dose of 10000 Ws / m 2 . With high light outputs, non-linear effects sometimes occur, so that the dose is only partially a suitable reference value. With standard LED Radiators can achieve power radiation densities of 50000W / m 2 with a
  • the stabilization step of the manufacturing method according to the invention can also be trimmed towards short process times and fast throughput times.
  • the stabilization step is preferably carried out within a short cycle time (of, for example, 30 s) which is predetermined in the production line or in a section thereof.
  • a constant illuminance can be used during the processing time.
  • a time and / or location-dependent illuminance can also be used.
  • the lighting can also be chopped up like a pulse.
  • Various requirements can be placed on the manufacturing process. While in mass production a high level of economy and a
  • Target variables such as a highest degree of efficiency regardless of economic efficiency, be rated higher.
  • the process can be designed accordingly.
  • the stabilization step can take place at various points in the
  • Manufacturing process take place, for example after the various depositions of silicon layers, passivation layers and optical layers have already taken place.
  • a stabilization step can also be carried out after the deposition of a silicon layer, for example still within the deposition system.
  • stabilization steps or partial stabilization steps can each be carried out after a layer has been deposited.
  • all deposited layers are preferably post-treated together in the stabilization step, preferably also metallic ones
  • HJT solar cells The electrical connection of HJT solar cells is usually carried out in two stages from the inside to the outside.
  • the silicon surfaces are generally enclosed over the whole area by transparent conductive layers, in particular TCO layers such as ITO, the transparent layers also having other functions in addition to electrical functions, in particular those of anti-reflection layers and / or encapsulation layers .
  • the transparent conductive layers can be connected to metal fingers or other metal structures, which can be viewed as part of the second stage of the solar cell connections.
  • These metal structures can be produced from low-temperature metal pastes, for example by screen printing, connection structures with metallic properties only being produced from the metal pastes during a heat treatment.
  • busbars can also be produced by screen printing.
  • other printing technologies, conductive adhesives and the like can also be used, with different technologies for producing metallic contacts requiring temperature treatments, which are often also referred to as curing.
  • Busbarless solar cells can be used, with different technologies for producing metallic contacts requiring temperature treatments, which are often also referred to as curing
  • foil-wire electrodes from Smartwire Connection Technology can later be processed into solar modules.
  • the metal temperature treatment or metal curing and the stabilization step can be combined into a single step of the manufacturing process.
  • solar cells are usually measured and classified.
  • the stabilization step has already been completed during the measurement, so that the solar cells are classified with stable solar cells.
  • Other stabilization processes that only take place after the measurement of the solar cells are associated with greater fluctuations in solar cell properties. As in solar modules some or all
  • the stabilization step of the manufacturing method according to the invention can be a
  • Temperature peaks can also reach temperatures above 400 ° C if the times with values between 1 and 5 seconds are sufficiently short. At lower temperatures below 200 ° C., short processing times in the order of seconds are also desirable for productivity reasons. But for serious reasons, a long lighting and / or
  • Temperature treatment time of, for example, a few hours or days can be selected, for example, to achieve maximum stabilization effects for a few demonstration solar cells. In suitably constructed systems, very long processes can be carried out economically, even for mass production.
  • the temperature treatment can also make a contribution to the production of metallic contacts from the metallic contact materials.
  • the existing processing step can be the temperature treatment
  • metallic contact materials are modified and supplemented so that a better stabilization of the solar cell is additionally achieved in the existing process step.
  • the light treatment as part of the stabilization step can be carried out with halogen or LED lamps for at least 1 sec.
  • the light from halogen lamps also has large radiation components in the near infrared and in the infrared spectral range, so that halogen lamps can also be used well as heat sources for simultaneous heating during lighting.
  • Halogen lamps are insensitive to temperature.
  • the entire available time can also be used in slower process steps. For example, if 5 min process time is available in a drying oven, then the entire process time can be used for treatment with heat and light.
  • the light sources for example the halogen lamps, can also be used as heat sources at the same time. In continuous systems, the combination of space and cycle time often results in shorter possible treatment times.
  • LED lamps higher light intensities are possible than with halogen lamps with the same heating of the solar cells. If LED lamps are properly cooled and controlled, they can have a significantly longer service life than halogen lamps.
  • the halogen or LED lamps can be composed of several individual lamp elements. The maximum usable power density for uncooled substrates is limited by the heating in strong lighting. In the case of cooled substrates, a higher radiation power density can be used, with the limits in the case of LED lamps higher than with halogen lamps. If heat filters are used, even higher outputs are possible.
  • a power density between 100 and 100,000 W / m 2 can be used. Since LED lamps emit less heat radiation than halogen lamps, high power densities can be used even with uncooled substrates. With suitable cooling measures, even higher power densities can be achieved. With long
  • Treatment times for example in a light storage device for stabilization steps lasting minutes, hours or days, a saturation of the stabilization effect can also be achieved with a low radiation power density of for example 100 W / m 2 .
  • Light treatment can also be carried out with a high-intensity light source, in particular a laser or a flash lamp with a power density of up to 100,000 W / m 2 .
  • a high-intensity light source in particular a laser or a flash lamp with a power density of up to 100,000 W / m 2 .
  • laser light high power densities can be achieved, which optically can be handled precisely due to the coherence of the laser light. With lasers, therefore, particularly fast and precise processing is possible.
  • the heating and the lighting of the solar cell can in the invention
  • Manufacturing processes are partially or completely carried out by a light source. Since the existing temperature limits of the HJT solar cell must be observed and, with strong lighting, there is always a corresponding warming, the warming accompanying the lighting can also be used as heating. In this way, existing performance and temperature limits can be optimally used. With this option, the stabilization step can be implemented particularly effectively and easily in terms of plant engineering.
  • the object of the invention is also achieved by a production line section for carrying out the stabilization step of the production method according to the invention, the production line section having a heating section for carrying out the
  • the heating section and the light processing section may be separate sections.
  • the two sections can, for example, be arranged spatially one behind the other in a continuous system.
  • the two sections can, however, also be designed as separate areas of a system or as separate systems.
  • the two areas can also overlap, for example the
  • Extending light treatment section essentially through an entire continuous system and the The heating section can be implemented in a central section of the same continuous system.
  • a temporal separation of the temperature treatment and the light treatment can also be implemented by different start and / or end times of the operation of light and heat sources, wherein the heat treatment section and the light treatment section can also be spatially identical.
  • the heating section and the light treatment section can also be spatially and temporally
  • heating component and the lighting component of the stabilization step coincide spatially and temporally and have a common
  • the production line section according to the invention is designed as a continuous furnace section with transparent transport rollers.
  • the solar cells are irradiated by halogen lamps, both on their side lying on top and on their opposite front side, which simultaneously serve as a heat source and a light source.
  • the entire passage through the continuous furnace section takes between ls and 30 s.
  • the halogen lamps are arranged so close to one another and to the solar cells that are passing by that the solar cells are heated to over 400 ° C. for 5 s during the passage.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé de fabrication de cellules solaires à hétérojonction de silicium avec au moins une étape de stabilisation, l'étape de stabilisation étant exécutée après que des couches de silicium amorphes et, de préférence, également des couches transparentes ou des matériaux de contact déjà métalliques ont été déposés auparavant sur des tranches de silicium cristallin photovoltaïque. La présente invention a pour objet de trouver une étape de stabilisation efficace qui permet des degrés élevés de développement de cellules solaires. L'objectif est résolu par le procédé de fabrication de cellules solaires à hétérojonction de silicium au cours duquel l'étape de stabilisation contient un échauffement de la cellule solaire à des températures au-delà de 200 °C et un éclairage à partir d'une source de lumière, la source de lumière émettant dans une plage de longueurs d'onde inférieure à 2500 nm et une dose de lumière fournie par la source de lumière étant supérieure à 8000 Ws/m2.
EP20726682.6A 2019-04-29 2020-04-29 Procédé de fabrication de cellules solaires à hétérojonction de silicium avec une étape de stabilisation et section de ligne de fabrication pour l'étape de stabilisation Pending EP3963640A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019111061.0A DE102019111061A1 (de) 2019-04-29 2019-04-29 Herstellungsverfahren von Silizium-Heterojunction-Solarzellen mit Stabilisierungsschritt und Fertigungslinienabschnitt für den Stabilisierungsschritt
PCT/DE2020/100353 WO2020221399A1 (fr) 2019-04-29 2020-04-29 Procédé de fabrication de cellules solaires à hétérojonction de silicium avec une étape de stabilisation et section de ligne de fabrication pour l'étape de stabilisation

Publications (1)

Publication Number Publication Date
EP3963640A1 true EP3963640A1 (fr) 2022-03-09

Family

ID=70775225

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20726682.6A Pending EP3963640A1 (fr) 2019-04-29 2020-04-29 Procédé de fabrication de cellules solaires à hétérojonction de silicium avec une étape de stabilisation et section de ligne de fabrication pour l'étape de stabilisation

Country Status (4)

Country Link
US (1) US20220149225A1 (fr)
EP (1) EP3963640A1 (fr)
DE (1) DE102019111061A1 (fr)
WO (1) WO2020221399A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020109600A1 (de) 2020-04-07 2021-10-07 Meyer Burger (Germany) Gmbh Fertigungslinie zur Herstellung von Solarmodulen aus geteilten Solarzellen
DE102021132240A1 (de) * 2021-12-08 2023-06-15 Hanwha Q Cells Gmbh Anlage zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle und Verfahren zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle
GB202119066D0 (en) 2021-12-29 2022-02-09 Rec Solar Pte Ltd Methods of treatment & manufacture of a solar cell

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Publication number Priority date Publication date Assignee Title
EP1734589B1 (fr) * 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Procédé de fabrication d'un module photovoltaique
DE102010006315B4 (de) * 2010-01-29 2012-08-30 Albert-Ludwigs-Universität Freiburg Verfahren zur lokalen Hochdotierung und Kontaktierung einer Halbleiterstruktur, welche eine Solarzelle oder eine Vorstufe einer Solarzelle ist
FR2977079B1 (fr) 2011-06-27 2013-07-26 Commissariat Energie Atomique Procede de traitement de cellules photovoltaiques a heterojonction pour ameliorer et stabiliser leur rendement
KR20150144585A (ko) * 2014-06-17 2015-12-28 엘지전자 주식회사 태양 전지의 후처리 장치
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
CN104078403A (zh) * 2014-07-16 2014-10-01 常州天合光能有限公司 快速改善晶硅太阳电池光致衰减的量产装置
US9780252B2 (en) * 2014-10-17 2017-10-03 Tp Solar, Inc. Method and apparatus for reduction of solar cell LID
US10443941B2 (en) * 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
CN107146828B (zh) * 2017-05-12 2019-12-03 北京金晟阳光科技有限公司 均匀高效退火的太阳电池辐照退火炉

Also Published As

Publication number Publication date
WO2020221399A1 (fr) 2020-11-05
DE102019111061A1 (de) 2020-10-29
US20220149225A1 (en) 2022-05-12

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