EP3900188A1 - Dispositif et procédé d'exploitation d'un accumulateur d'énergie électrochimique en fonction de la direction - Google Patents

Dispositif et procédé d'exploitation d'un accumulateur d'énergie électrochimique en fonction de la direction

Info

Publication number
EP3900188A1
EP3900188A1 EP19832060.8A EP19832060A EP3900188A1 EP 3900188 A1 EP3900188 A1 EP 3900188A1 EP 19832060 A EP19832060 A EP 19832060A EP 3900188 A1 EP3900188 A1 EP 3900188A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor switch
inverse diode
measuring device
value
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19832060.8A
Other languages
German (de)
English (en)
Inventor
Andreas Gleiter
Sven Landa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP3900188A1 publication Critical patent/EP3900188A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00304—Overcurrent protection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0031—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/107—Modifications for increasing the maximum permissible switched voltage in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0009—AC switches, i.e. delivering AC power to a load
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/60—Other road transportation technologies with climate change mitigation effect
    • Y02T10/70—Energy storage systems for electromobility, e.g. batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/60—Other road transportation technologies with climate change mitigation effect
    • Y02T10/7072—Electromobility specific charging systems or methods for batteries, ultracapacitors, supercapacitors or double-layer capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02T90/10—Technologies relating to charging of electric vehicles
    • Y02T90/14—Plug-in electric vehicles

Definitions

  • the invention relates to an apparatus and a method for
  • Disconnector is operated as a normal switch and is not
  • the semiconductor switches used here are, for example, mosfets which have an intrinsic body diode.
  • the disadvantage here is that the disconnectors can not be switched depending on the direction, since the power loss in the body diode would be too large.
  • Battery management systems are also known which have separate connections for charging and discharging.
  • the semiconductor switches are arranged in parallel to one another.
  • the disadvantage here is that energy recovery via the load is not possible. It is the object of the invention to overcome these disadvantages.
  • the device for operating an electrochemical energy store in a direction-dependent manner has a first semiconductor switch and a second one
  • the semiconductor switch a first measuring device and a second measuring device, wherein the first semiconductor switch comprises a first inverse diode and the second semiconductor switch comprises a second inverse diode.
  • the first semiconductor switch and the second semiconductor switch are connected in series.
  • the first measuring device is set up to detect a first voltage value across the first inverse diode and to compare the first voltage measured value with a first predetermined limit value.
  • Voltage measurement value can be controlled with the first predetermined limit value.
  • the second measuring device is set up to detect a second voltage value across the second inverse diode and to compare the second voltage measured value with a second predetermined limit value.
  • Voltage measurement value can be controlled with the second predetermined limit value.
  • the first semiconductor switch and the second semiconductor switch can be switched on or off as a function of the comparison of the voltage measurement value detected in each case via the respective inverse diode with the respectively predetermined limit value.
  • Operating states of the electrochemical energy store can be set, namely charging or discharging.
  • Semiconductor switches each have a field effect transistor, in particular a MOSFET.
  • the Rdson is low at voltages up to 60V.
  • the first inverse diode and the second inverse diode are each a body diode of the field effect transistors.
  • the device is suitable for high voltage classes.
  • the vehicle according to the invention comprises a device according to the invention for the direction-dependent operation of an electrochemical energy store.
  • the vehicle according to the invention is in particular an electric two-wheeler, for example an electric scooter.
  • the method according to the invention for operating an electrochemical energy store in a direction-dependent manner comprises switching on a first semiconductor switch, detecting a second voltage measured value of a second inverse diode of a second semiconductor switch, comparing the second voltage measured value of the second inverse diode of the second
  • the electrochemical energy store can be operated in a direction-dependent manner, with the discharge process of the electrochemical one
  • the individual Operating states of the electrochemical energy store can be set, namely charging or discharging.
  • the second voltage measurement value is recorded with the aid of a second measuring device, the second measuring device comprising a comparator.
  • the measuring device can be implemented inexpensively.
  • the first is activated
  • the first semiconductor switch and the second semiconductor switch are activated as a function of an overcurrent signal.
  • Figure 2 shows a method for the directional operation of a
  • FIG. 1 shows a device 100 for the direction-dependent operation of an electrochemical energy store 101.
  • the device 100 comprises a first semiconductor switch 102, a second semiconductor switch 104, a consumer 108 and a charging unit 109.
  • the energy store 101, the first semiconductor switch 102, the second semiconductor switch 104 and the consumers 108 are connected in series.
  • the charging unit 109 is connected in parallel to the consumer 108.
  • the first semiconductor switch 102 comprises a first one
  • the second semiconductor switch 104 comprises a second one
  • the first semiconductor switch 102 has a first connection 120, a second connection 121 and a third connection 122, the second connection 121 functioning as a control connection.
  • Semiconductor switch 104 has a fourth connection 123, a fifth
  • Port 124 acts as a control port.
  • a cathode of the first inverse diode 103 is electrically connected to the first connection 120 of the first semiconductor switch 102 and an anode of the first inverse diode 103 is electrically connected to the third connection 122 of the first semiconductor switch 102.
  • a cathode of the second inverse diode 105 is connected to the fourth connection 123 of the second semiconductor switch 104 and an anode of the second inverse diode 104 is connected to the sixth connection 125 of the second
  • the first inverse diode 103 is in the reverse direction
  • the second inverse diode 105 is arranged in the forward direction to the electrochemical energy store 101, since the anode of the second inverse diode 105 is connected to the positive pole of the electrochemical energy store 101 when the first semiconductor switch 102 is switched on.
  • a first measuring device 106 is electrically connected to the cathode of the first inverse diode 103 and the anode of the first inverse diode 103.
  • a second Measuring device 107 is electrically connected to the cathode of the second inverse diode 105 and the anode of the second inverse diode 105.
  • the first measuring device 106 is set up to detect a voltage drop across the first inverse diode 103 and to generate a first signal which is sent or applied to an input of a first OR gate 112.
  • the second measuring device 107 is set up to detect a voltage drop across the second inverse diode 105 and to generate a second signal which is sent or applied to an input of a second OR gate 113.
  • the voltage drop across the first inverse diode and the second inverse diode is recorded continuously during operation of the device 100.
  • the first OR gate 112 has multiple inputs and a first output.
  • the first output is electrically connected to an input of a first AND gate 114.
  • An output of the first AND gate 114 is electrically connected to a first driver stage 116.
  • the first driver stage 116 is set up to control or switch the first semiconductor switch 102.
  • the second OR gate 113 has multiple inputs and a second output.
  • the second output is electrically connected to an input of a second AND gate 115.
  • An output of the first AND gate 115 is electrically connected to a second driver stage 117.
  • the second driver stage 117 is set up to control or switch the second semiconductor switch 104.
  • the device 100 includes a first inverter 118, which as
  • Input signal detects a switch-off signal and on the output side with a
  • the device 100 comprises a second inverter 119, which detects an overcurrent signal as an input signal and is electrically connected on the output side to a further input of the first AND gate 114 and the second AND gate 115.
  • the overcurrent signal is generated by a further measuring device 111, the measuring device 111 one
  • the first semiconductor switch 102 and the second semiconductor switch 104 are configured, for example, in the form of transistors. They can either be designed as an n-channel or as a p-channel transistor. In one
  • Embodiments are the first semiconductor switch 102 and the second
  • the semiconductor switch 104 field effect transistors, especially Mosfets.
  • the first inverse diode 103 and the second inverse diode 105 are the body diodes of the Mosfets.
  • the first semiconductor switch 102 and the second semiconductor switch 104 can be configured as IGBTs.
  • the electrochemical energy store 101 comprises, for example, Li-ion cells.
  • the first semiconductor switch 102 and the second semiconductor circuit have a common source connection.
  • the first semiconductor switch 102 and the second semiconductor switch 104 have a common drain connection.
  • the first semiconductor switch 102 and the second semiconductor switch 104 can also be arranged in the minus path of the electrochemical energy store 101.
  • first semiconductor switch 102 and a second semiconductor switch 101 each forming a pair of semiconductor switches.
  • the first measuring device 106 and the second measuring device 107 predominantly comprise analog components.
  • the first measuring device 106 and the second measuring device 107 have exclusively analog components. Due to the analog design, the
  • the first OR gate 112 the second OR gate 113, the first AND gate 114, the second AND gate 115, the first inverter 118 and the second inverter 119 are analog
  • either the first semiconductor switch 102 or the second semiconductor switch 104 is switched on with the aid of a switch-on signal which represents the desired operating state of the electrochemical energy store 101. This becomes the first semiconductor switch 102
  • the electrochemical energy store 101 is to be discharged. If the second semiconductor switch 104 is switched on in this way, the electrochemical energy store 101 is to be charged.
  • the operation of the device 100 will now be explained on the basis of the operating state unloading.
  • the first semiconductor switch 102 is switched on via the driver stage 116 by applying a switch-on signal or discharge signal to an input of the first OR gate 112. This switch-on signal is passed via the output of the first OR gate 112 to an input of the first AND gate 114.
  • the first AND gate 114 has further inputs, each of which is electrically connected to a first inverter 118 and a second inverter 119. If neither a switch-off signal is present at the first inverter 118 nor an overcurrent signal at the second inverter 119, the first semiconductor switch 102 is switched via the first driver stage 116
  • Measuring device 107 comprises a comparator and detects the
  • Threshold value voltage of the second inverse diode 105 which is approximately 0.7 V, a signal is passed to an input of the second OR gate 113. This signal is passed on to an input of the second AND gate 115.
  • the second AND gate 115 has further inputs, which are each electrically connected to the first inverter 118 and the second inverter 119. If there is neither a switch-off signal at the first inverter 118 nor an overcurrent signal at the second inverter 119, the second semiconductor switch 104 is switched on via the second driver stage 117. The electrical energy store 101 is discharged. In other words, by turning on the first one
  • Semiconductor switch 102 can only flow a discharge current through the inverse diode 105 in the discharge direction.
  • the inverse diode 105 blocks a charging current. A reversal of the current direction from discharge to charging direction is via the
  • Measuring device 107 detected and the second semiconductor switch 104 switched off.
  • the second semiconductor switch 104 is closed first. Only a current can therefore flow in the charging direction via the first semiconductor switch 102 and the first inverse diode 103. As soon as a current flows in the charging direction, it is detected by the first measuring device 106 and the first driver stage 116 activates the first semiconductor switch 102.
  • the electrochemical energy store 101 can be both discharged and charged, i. H. there is recuperation.
  • both the first semiconductor switch 102 and the second semiconductor switch 104 are closed.
  • both the first semiconductor switch 102 and the second semiconductor switch 104 are opened.
  • a plurality of electrochemical energy stores 101 can be connected in parallel, so that efficient operation takes place without compensation currents between the battery packs.
  • the second measuring device 107 and the further measuring device 111 are provided. This means that the device 100 has no measuring device that detects the voltage drop across the first inverse diode. This embodiment only allows unloading and prevents charging currents. As a result, a discharge current can always flow and the electrochemical energy storage is protected against impermissible charging currents.
  • FIG. 2 shows a method 200 for the direction-dependent operation of an electrochemical energy store. The method 200 starts with the
  • a first semiconductor switch is switched on with the aid of a switch-on signal, which represents, for example, a discharge mode or a charging mode.
  • a switch-on signal which represents, for example, a discharge mode or a charging mode.
  • a voltage drop across a second inverse diode of a second semiconductor switch is detected using a second measuring device.
  • step 230 the voltage drop is marked with a
  • the predetermined limit value represents the threshold voltage of the second inverse diode, usually 0.7 V. If the voltage drop is greater than the threshold value, the second generates
  • Measuring device a second signal, which is sent to an input of a second OR gate. If the voltage drop is less than the threshold value, no second signal is generated and the method continues with step 220. In a step 240 following step 230, the second OR gate is switched and with the aid of a subsequent second one
  • the energy store is discharged.
  • the switch-on signal is applied to one of the inputs of a first OR gate, so that the first semiconductor switch via a first driver circuit
  • the first semiconductor switch e.g. B. Mosfet is activated and the current flows through the first semiconductor switch and a second inverse diode, e.g. B. the body diode of the second mosfet, to the consumer.
  • the second measured value device monitors the voltage or the voltage drop across the second inverse diode. As soon as a current flows through the second inverse diode, a voltage drops across the second inverse diode.
  • the second semiconductor switch When the threshold voltage of the second inverse diode is reached, the second semiconductor switch is switched on.
  • the second semiconductor switch is switched on via the second measuring device and the threshold value of approximately 0.7 V.
  • the second semiconductor switch When switched on, the second semiconductor switch has a contact resistance of approx. ImO, depending on the MOSFET used. As long as a discharge current flows, the voltage drop across the second measuring device is positive, ie positive voltage drop from anode to cathode.
  • the measuring device is designed so that a
  • the unloading direction is activated.
  • the first semiconductor switch is switched on permanently. As soon as a discharge current can flow through the second inverse diode, i. H. the voltage drop across the second inverse diode is higher than the threshold, is across the second
  • Measurement acquisition of the second semiconductor switch enabled.
  • the current direction is reversed from discharging to charging, this is recognized by the second measured value acquisition and the second semiconductor switch is switched off.
  • the unloading direction is still unlocked and the second
  • the semiconductor switch switches on automatically when the discharge current is reached and off when the charge current is reached.
  • the energy store is charged.
  • Energy storage for charging comprises switching on a second semiconductor switch, detecting a first voltage measurement value of a first inverse diode of a first semiconductor switch, comparing the first
  • the switch-on signal or charge signal is applied to one of the inputs of a second OR gate, so that the second semiconductor switch is switched on via the second driver circuit. That means the second Mosfet is activated and the current flows through the second semiconductor switch and the first Inverse diode, e.g. B. the body diode of the first mosfet, to the consumer.
  • the first measured value device monitors the voltage or the voltage drop across the first inverse diode. As soon as the voltage drop reaches the threshold voltage of the first inverse diode, a current flows through the first inverse diode and the first semiconductor switch is switched on.
  • the device can thus switch a current flow depending on the direction. By switching on one of the transistors, the current can only flow in one direction. A current direction is thus specified. The flow in the opposite direction is blocked. In addition, a
  • the method for the direction-dependent operation of an electrochemical energy store for the driving state i. H. Charging and discharging comprises switching on a first and a second semiconductor switch.
  • the invention enables direction-dependent switching of the first semiconductor switch and the second semiconductor switch.
  • the voltage drop across the body diode is recorded and the MOSFET is automatically switched on.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

La présente invention concerne un dispositif (100) d'exploitation, en fonction de la direction, d'un accumulateur d'énergie électrochimique (101). Ledit dispositif comprend : un premier commutateur semi-conducteur (102) qui comporte une première diode inverse (103) ; un second commutateur semi-conducteur (104) qui comporte une seconde diode inverse (105) ; un premier système de mesure (106) et un second système de mesure (107). Le dispositif est caractérisé en ce que le premier commutateur semi-conducteur (102) et le second commutateur semi-conducteur (104) sont montés en série, et en ce que le premier système de mesure (106) est agencé pour détecter une première valeur de mesure de tension aux bornes de la première diode inverse (103) et pour comparer la première valeur de mesure de tension à une première valeur limite prédéfinie, le premier commutateur semi-conducteur (102) pouvant être commandé en fonction de la comparaison de la première valeur de mesure de tension à la première valeur limite prédéfinie, et en ce que le second système de mesure (107) est agencé pour détecter une seconde valeur de mesure de tension aux bornes de la seconde diode inverse (105) et pour comparer la seconde valeur de mesure de tension à une seconde valeur limite prédéfinie, le second commutateur semi-conducteur pouvant être commandé en fonction de la comparaison de la seconde valeur de mesure de tension à la seconde valeur limite prédéfinie.
EP19832060.8A 2018-12-20 2019-12-18 Dispositif et procédé d'exploitation d'un accumulateur d'énergie électrochimique en fonction de la direction Pending EP3900188A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018222554.0A DE102018222554A1 (de) 2018-12-20 2018-12-20 Vorrichtung und Verfahren zum richtungsabhängigen Betreiben eines elektrochemischen Energiespeichers
PCT/EP2019/085838 WO2020127414A1 (fr) 2018-12-20 2019-12-18 Dispositif et procédé d'exploitation d'un accumulateur d'énergie électrochimique en fonction de la direction

Publications (1)

Publication Number Publication Date
EP3900188A1 true EP3900188A1 (fr) 2021-10-27

Family

ID=69105815

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19832060.8A Pending EP3900188A1 (fr) 2018-12-20 2019-12-18 Dispositif et procédé d'exploitation d'un accumulateur d'énergie électrochimique en fonction de la direction

Country Status (4)

Country Link
EP (1) EP3900188A1 (fr)
CN (1) CN113196664B (fr)
DE (1) DE102018222554A1 (fr)
WO (1) WO2020127414A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021204762A1 (de) 2021-05-11 2022-11-17 Robert Bosch Gesellschaft mit beschränkter Haftung Überwachungsanordnung für eine elektrische Komponente, Halbleiterschalteranordnung mit Überwachungsfunktion und Energiesystem
DE102022116806A1 (de) 2022-07-06 2024-01-11 AT Tronic GmbH Verfahren und Schaltung zur Stromkontrolle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789902A (en) * 1996-02-22 1998-08-04 Hitachi Metals, Ltd. Bi-direction current control circuit for monitoring charge/discharge of a battery
US6060943A (en) * 1998-04-14 2000-05-09 Nmb (Usa) Inc. Circuit simulating a diode
JP4850540B2 (ja) * 2005-12-26 2012-01-11 富士通セミコンダクター株式会社 Ｄｃ−ｄｃコンバータ及びｄｃ−ｄｃコンバータの制御回路
JP2008017237A (ja) * 2006-07-07 2008-01-24 Mitsubishi Electric Corp 電子部品およびその電子部品を用いた電力変換器
US8779735B2 (en) * 2011-03-15 2014-07-15 Infineon Technologies Ag System and method for an overcurrent protection and interface circuit between an energy source and a load
WO2013156811A1 (fr) * 2012-04-19 2013-10-24 Freescale Semiconductor, Inc. Circuit de protection et ensemble circuit d'attaque de grille
US8995158B2 (en) * 2012-07-11 2015-03-31 Infineon Technologies Dresden Gmbh Circuit arrangement with a rectifier circuit
US10076969B2 (en) * 2015-07-02 2018-09-18 Johnson Controls Technology Company Battery systems and methods for bi-directional current control
JP6401747B2 (ja) * 2016-07-01 2018-10-10 矢崎総業株式会社 半導体スイッチ制御装置

Also Published As

Publication number Publication date
DE102018222554A1 (de) 2020-06-25
WO2020127414A1 (fr) 2020-06-25
CN113196664B (zh) 2024-06-25
CN113196664A (zh) 2021-07-30

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