EP3822709A1 - Verfahren zur herstellung einer uhrkomponente - Google Patents

Verfahren zur herstellung einer uhrkomponente Download PDF

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Publication number
EP3822709A1
EP3822709A1 EP19208589.2A EP19208589A EP3822709A1 EP 3822709 A1 EP3822709 A1 EP 3822709A1 EP 19208589 A EP19208589 A EP 19208589A EP 3822709 A1 EP3822709 A1 EP 3822709A1
Authority
EP
European Patent Office
Prior art keywords
support
cavity
metal layer
level
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19208589.2A
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English (en)
French (fr)
Other versions
EP3822709B1 (de
Inventor
Sylvain Jeanneret
Rémy FOURNIER
James Hide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Patek Philippe SA Geneve
Original Assignee
Patek Philippe SA Geneve
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Patek Philippe SA Geneve filed Critical Patek Philippe SA Geneve
Priority to EP19208589.2A priority Critical patent/EP3822709B1/de
Publication of EP3822709A1 publication Critical patent/EP3822709A1/de
Application granted granted Critical
Publication of EP3822709B1 publication Critical patent/EP3822709B1/de
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Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B5/00—Automatic winding up
    • G04B5/02—Automatic winding up by self-winding caused by the movement of the watch
    • G04B5/16—Construction of the weights
    • G04B5/165—Weights consisting of several parts
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/003—3D structures, e.g. superposed patterned layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/005—Jewels; Clockworks; Coins
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/063—Balance construction
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams

Definitions

  • the present invention relates to a method of manufacturing a timepiece component, and more particularly a method of manufacturing a timepiece component by a micro-manufacturing technique.
  • Some watch components such as balance springs and wheels, are today made from silicon. Silicon is appreciated for its lightness, its elasticity, its non-magnetic character and for its ability to be machined by micro-fabrication techniques, in particular by the deep reactive ionic etching technique DRIE.
  • DRIE deep reactive ionic etching
  • Silicon nevertheless has drawbacks: it is fragile, in other words, it has no plastic domain, which makes it difficult for example to fix a silicon wheel on an axle.
  • its great lightness does not make it possible to produce components completely in silicon, and in small dimensions, such as a balance or an oscillating weight, which must have sufficient inertia or unbalance.
  • Materials other than silicon which can also be machined by micro-manufacturing techniques, and whose use for manufacturing watch components can be envisaged, have the same drawbacks. These materials include diamond, quartz, glass and silicon carbide.
  • a component watchmaker comprising a structure produced by a micro-manufacturing technique and at least one element formed in or at the periphery of the structure in a material different from that of the structure, said method comprising the production of a structure comprising a cavity which passes through said structure entirely, assembling this structure on a support having a conductive layer by means of a layer of photosensitive resin deposited on the surface of the support and serving as a temporary adhesive, and exposing the assembly in order to eliminate the photosensitive resin appearing at the bottom of the cavity so as to reveal the conductive layer from which the filling of the cavity by galvanic deposition of a metal is carried out.
  • the silicon structure, with its metallic element is then separated from its support.
  • This very advantageous process makes it possible to form the metallic element in or at the periphery of the structure, using the structure as a mold for the galvanic growth, and not to bring it back.
  • the entire watch component can therefore be manufactured by micro-manufacturing techniques, that is to say techniques allowing precision of the order of a micron.
  • the formed metal element therefore does not adversely affect the manufacturing precision of the component.
  • the present invention aims to remedy these drawbacks by proposing a new method making it possible to avoid any galvanic growth defect.
  • the step of producing the support comprises, before the assembly step, the formation, on the face of the support intended to be assembled to the structure, of at least one controlled zone arranged for, during assembly, come opposite at least the cavity of the structure and to allow the conductive metal layer to appear so as to form, with said cavity, a mold intended to form said element.
  • controlled zones with precisely delimited contours on the support, before its assembly with the structure, allows the conductive metal layer to appear subsequently, after assembly, on a precisely defined and homogeneous zone in order to better control the galvanic growth. and to avoid any parasitic galvanic growth.
  • the cavity intended to receive the element is arranged, during the step of producing the structure, to have an open end opening out from the second level to the outside, and the step of assembling the support and the structure comprises a step of positioning the structure so that said structure is assembled to the support by its second level, the open end of the cavity being positioned facing the controlled area of the support.
  • Such positioning of the structure on the support makes it possible to limit the contact surface between the support and the structure, which makes it possible to reduce the areas of the structure where parasitic galvanic growth could occur.
  • the present invention relates to a method of manufacturing a watch component comprising a main structure and at least one element formed in or at the periphery of said structure in a material different from that of the structure.
  • the method of the invention comprises the following steps:
  • the first stage as represented by the figure 1a , consists in producing a structure 1 comprising at least one through cavity 2 intended to receive said element 3 (cf. Figure 1g ).
  • the structure 1 is preferably configured beforehand so as to produce the watch component of the desired final shape.
  • Structure 1 is made of a material chosen from the group comprising silicon, oxidized silicon, diamond, quartz, glass or silicon carbide.
  • the structure 1 is made of silicon or oxidized silicon, that is to say it is made from a silicon substrate 4, such as a silicon wafer, covered with a layer of 'silicon oxide 5.
  • the structure 1 is preferably produced by micro-manufacturing or micro-forming techniques.
  • the step of producing the structure 1 is carried out by the technique of deep reactive ion etching DRIE (Deep Reactive Ion Etching).
  • DRIE Deep Reactive Ion Etching
  • the structure 1 is represented as having only one and the same level, that is to say that it is of constant height. In this case, only one DRIE step is necessary.
  • the production of such a structure is well known to those skilled in the art so that a more detailed description of its manufacturing process is not necessary here.
  • the structure 1 may comprise one or more through cavities 2 intended to receive an element 3.
  • This through cavity 2 has side walls 2a which may be defined in part at least by the structure 1 or entirely defined by the structure 1, as shown in the figure 1 for example.
  • the second step of the method of the invention consists in producing a support 6 comprising at least one conductive metal layer 8, as shown in Figure figure 1b .
  • the support 6 is made for example of silicon, oxidized silicon or pyrex.
  • the support 6 is made from a silicon substrate 10, such as a silicon wafer, covered with a layer of silicon oxide 12, as shown in FIG. figure 2a .
  • the support 6 is then prepared by depositing, on the functional face 6a of the oxidized silicon substrate 10, 12 intended to be assembled to the structure 1, a first layer of photosensitive resin 14 as shown in FIG. figure 2b .
  • a photosensitive resin layer 14 is used as a passivation layer.
  • the conductive metal layer 8 is deposited above the first layer of photosensitive resin 14, on the side of the functional face 6a.
  • This conductive metal layer 8 is made of a metal used for the galvanic growth of the element 3 in the cavity 2.
  • This conductive metal layer 8 is for example a gold layer.
  • the conductive metal layer 8 can be positioned between other metal layers, forming a multilayer metal assembly. For example, it is possible to provide, between the first layer of photosensitive resin 14 and the conductive metal layer 8, a very thin metal bond layer (not shown), made for example of titanium. After the deposition of the conductive metal layer 8, it is possible to provide a step of depositing a sacrificial metal layer 16 on the conductive metal layer 8.
  • This sacrificial metal layer 16 is a very thin metal layer made for example of titanium or made of copper and titanium alloy, making it possible to protect the conductive metal layer 8 from any oxidation before the galvanic growth step.
  • the different layers metal can be deposited for example by PVD.
  • the sacrificial metal layer 16 can be deposited for example by a Flash process.
  • the step of producing the support 6 advantageously comprises a step of depositing a parylene layer 18 at least above the conductive metal layer 8, on the side of the functional face 6a of the support 6, and more specifically on the sacrificial layer 16 when present.
  • the parylene layer 18 is deposited, according to a method known to those skilled in the art, at low temperatures, for example all around the support 6.
  • the thickness of the parylene layer 18 is preferably between 0.5 ⁇ m and 8. ⁇ m.
  • parylene layer which has been deposited on the inoperative face 6b of the support 6, opposite to the functional face 6a which comprises the photosensitive resin layer 14 and the conductive metal layer 8 already deposited, can be removed by reactive ionic etching RIE (Reactive Ion Etching).
  • the parylene layer 18 makes it possible to ensure that the through cavities 20 of the structure 1 not intended to receive an element 3 remain isolated from the conductive metal layer 8 so as not to be subject to parasitic galvanic growth, in particular through faults that could have the first layer of photosensitive resin 14 at the level of these through cavities 20.
  • the step of producing the support 6 comprises the formation, on the functional face 6a of the support 6 intended to be assembled to the structure 1, of at least one controlled zone 22 arranged for, during the assembly of the structure 1 on the support 6, come opposite at least the cavity 2 of the structure 1 intended to receive the element 3 and to allow the conductive metal layer 8 to appear so as to form, with the side walls 2a of said cavity 2, a mold intended to form said element 3, the exposed conductive metal layer 8 constituting a conductive bottom of the mold.
  • the zone 22 is positioned on the support 6 so as to correspond to the positioning and is dimensioned so as to have dimensions at least equal to the dimensions, in cross section, of the end of the cavity 2 in the structure 1.
  • This step carried out before the step of assembling the structure 1 on the support 6, makes it possible to define with great precision the zone 22 of the support 6 facing the cavity 2, zone 22 only from which the filling of the cavity 2 by galvanic deposition of a metal to form the element 3 will be produced.
  • the step of producing the support 6 comprises a step of depositing a second layer of photosensitive resin 24 at least on the functional face 6a of the support 6 intended to be assembled to the structure 1, as well as a step of forming, at least in said second layer of photosensitive resin 24, an opening 26 corresponding to the controlled zone 22.
  • This opening 26, controlled in its positioning and in its dimensions, is advantageously formed by a photolithographic process using a mask arranged on the support 6, specifically prepared beforehand, and comprising a window corresponding to the location of the cavity 2 on the structure 1 and having dimensions at least equal to the dimensions, in cross section, of the open end of the cavity 2.
  • the opening 26 is not, however, too large so as not to form too large a protuberance of a metal element, as can be seen from ra below.
  • the parts of the photosensitive resin 24 exposed through the mask are removed, allowing the parylene 18 to appear in the opening 26, as shown in figure figure 2e .
  • the exposure of the second layer of photosensitive resin 24 before the assembly of the structure 1 on its support 6 allows better control of the illuminated area through the specific mask deposited on the support 6 and to form the controlled zone 22 delimited for the subsequent galvanic growth, avoiding any parasitic, uncontrolled exposure of the second layer of photosensitive resin 24 which would cause parasitic galvanic growth.
  • the configuration of the cavity 2 of the structure 1, used as a mask on the support in the known methods, is now without influence on the exposure of the second layer of photosensitive resin 24 which can be perfectly and more easily limited to the controlled area. 22.
  • the method of the invention continues with a step of temporary assembly of the structure 1 and of the support 6, prepared as described above, and as shown in Figure figure 1c .
  • the structure 1 is positioned above the support 6 so that the open end of the cavity 2 faces the corresponding controlled zone 22 provided on the support 6.
  • the assembly of the structure 1 and of the support 6 is preferably carried out by bonding by means of the second layer of non-exposed photosensitive resin 24, remaining on the surface of the support 6, and which serves as an adhesive.
  • controlled zone 22 is formed by temporarily assembling the structure 1 with its support 6 , the main thing being to leave a controlled zone 22 of the support 6 clear, giving access to a controlled zone of the support.
  • conductive metal layer 8 which will come opposite the corresponding cavity 2, a controlled starting point for subsequent galvanic growth.
  • the assembly step of the method of the invention then comprises a step of removing the parylene 18 in the controlled zone 22, and more specifically at the area corresponding to the opening 26 in the second layer of photosensitive resin 24, as shown in figure 1d .
  • the parylene 18 can be removed, for example, by reactive ion etching RIE (Reactive Ion Etching). This allows the conductive metal layer 8 or the sacrificial metal layer 16 to appear in the opening 26 when it is present (not shown in the figure. figure 1 ).
  • parylene only at the level of the opening 26 makes it possible to improve the control of the selectivity and to avoid parasitic growths of the zone 22 for the subsequent galvanic growth.
  • the assembly step of the method of the invention then comprises a step of eliminating the sacrificial metal 16 in the controlled zone 22, and more specifically at the level of the corresponding zone. at the opening 26.
  • the sacrificial metal can be removed for example by soaking in an acid bath. This makes it possible to reveal in the opening 26 the conductive metal layer 8 which will form the conductive bottom of the mold, the starting point of the galvanic growth for the formation of the element 3.
  • the next step of the method of the invention consists in forming the element 3 by depositing, in the cavity 2, the material constituting said element 3, different from that of the structure 1.
  • the deposition of the material in the cavity 2 is produced by galvanic growth from the area made accessible of the metallic conductive layer 8 at the level of the opening 26 defining the controlled area 22 of the support 6, using the mold formed by said exposed area of the metallic conductive layer 8 as well as by the side walls 2a of the cavity 2 of the structure 1.
  • said material forming element 3 is a metal.
  • the element 3 is made of a material of greater density than the material of the structure 1, such as silicon.
  • the metallic element 3 is preferably made of gold. It could nevertheless be made in another metal, in particular another metal with a high density, such as Ni, NiP, or any other electro-formable metal.
  • the metal element 3 is in the same plane as the structure 1 and has the same constant height as the latter.
  • the next step of the process of the invention consists in separating the structure 1 from its support 6, for example by dissolving the second layer of photosensitive resin 24.
  • the structure 1 is obtained with a metallic element 3 formed in the cavity 2, and terminated by a metallic protuberance 28 which is formed in the space cleared of the controlled zone 22, at the level of opening 26.
  • the last step of the method of the invention consists in leveling the element 3 with respect to the structure 1. This operation is carried out for example by lapping in order to eliminate the metallic protuberance 28 so as to give the element 3 the same height as structure 1.
  • the method of the invention makes it possible to limit the formation of the metal protuberances 28 only to the controlled areas 22, so that they can be identified and easily removed. Structure 1 does not exhibit other zones of parasitic galvanic growth.
  • the structure 1 can have several levels while being stepped on at least a first and a second level which are different from one another.
  • structure 1 is shown as having two different levels 1a, 1b. In this case, two stages of DRIE are practiced to achieve the different levels.
  • the second level 1b is defined such that the area occupied by a cross section of the structure 1 at the second level 1b is less than the area occupied by a cross section of the structure 1 at the first level 1a.
  • Element 3 is located at least at the second level 1b, and preferably extends over the two levels 1a and 1b.
  • the structure 1 preferably comprises a silicon substrate 4 covered with a layer of silicon oxide 5. It is however specified that during the step of producing the structure 1, the cavity 2 intended for at receiving the element 3 is arranged to have an open end 2b opening out from the second level 1b outwards.
  • the support 6 is made in the same way as described above, with reference to figure 2 especially. It comprises in particular the silicon substrate 10 covered with a layer of silicon oxide 12, and on its functional face 6a, the first layer of photosensitive resin 14, optionally a very thin metal bonding layer, the conductive metal layer 8 , optionally a sacrificial metal layer, the parylene layer 18 and the second layer of photosensitive resin 24. As described above, the support 6 comprises in said second layer of photosensitive resin 24, the opening 26 corresponding to the controlled zone 22 , facing the cavity 2 of the support 1, as shown in figure 3a .
  • the step of assembling the support 6 and the structure 1 comprises a step of positioning the structure 1 so that said structure 1 is assembled to the support 6 by its second level 1b, the open end 2b of the cavity 2 being positioned opposite the controlled zone 22 of the support 6, as shown in figure 3a .
  • the structure 1 is turned over so as to position the face of its second level facing the support 6, said second level representing a surface smaller than that of the first level, in order to '' have the smallest possible contact surface with said support 6.
  • the cavity 2 and the walls 30 of the structure 1 defining the cavity 2 are dimensioned to allow the structure 1, and more particularly at the second level 1b of the structure 1, to have a contact surface with the support 6 sufficient to ensure good adhesion between the support 6 and the structure 1 at the time of assembly. This makes it possible in particular to ensure the strength of the assembly during galvanic growth.
  • the cavity 2 being defined by the walls 30 of the structure 1 of thickness e (in cross section) may have a height h chosen such that the ratio e / h may for example be greater than 0.25, for example, preferably greater than 0.3, and preferably greater than 0.35, and on the other hand less than 0.85, preferably less than 0.75, or preferably less than 0.55, or even less than 0.4, depending on the intended use of the watch component and the position of the wall on the component.
  • the thickness of the wall of the structure which is located furthest to the periphery must be minimal so as not to disturb the mass / inertia ratio of the balance.
  • the w / h ratio can advantageously be between 0.3 and 0.4 at a wall located inside the balance, and between 0.25 and 0.35 at a wall located at the periphery.
  • the cavity 2 has, in cross section, a width L separating the two opposite walls 30 of the structure 1, chosen such that the ratio h / L is preferably between 0.1 and 0.9, and preferably less than 0.8 , preferably less than 0.7, and preferably less than 0.6, or even 0.5 or 0.4.
  • the steps of the method according to the second variant are identical to the steps described above in relation to the variant of the figure 1 . More particularly, the parylene 18 is eliminated at the level of the zone corresponding to the opening 26 in the second layer of photosensitive resin 24, giving access to the conductive metal layer 8, as shown in FIG. figure 3b . Then, in the case where a sacrificial metal layer, said sacrificial metal is eliminated at the level of the zone corresponding to the opening 26.
  • the element 3 is formed in the cavity 2 by galvanic growth from the free area of the conductive layer metal 8, the cavity 2 being filled through its end 2b on the side of the second level 1b.
  • the next step of the method of the invention consists in separating the structure 1 from its support 6.
  • the structure 1 is obtained with a metallic element 3 formed in the cavity 2, and terminated by a metallic protuberance 28 which has formed. in the open space of the controlled area 22, at the level of the opening 26.
  • the last step of the method of the invention consists in leveling the element 3 with respect to the structure 1.
  • the leveling is therefore done on the side of the second level 1b which occupies the smallest area in cross section, without risk damaging the first level 1a of structure 1.
  • the surface of the first level 1a of the structure which represents in cross section, the most important surface, is not in contact with the support 6 so that no parasitic galvanic growth, which would be difficult to remove over a large area, cannot occur.
  • the method of the invention is used to manufacture a horological component, such as a balance 31, shown in FIG. figure 4 , the element 3 being placed at the periphery of the structure 1 and serving to increase the inertia / mass ratio of the balance.
  • Said balance 31 comprises a board 32 constituting the first level 1a of the structure 1 and comprising a central orifice 34, as well as two closed boxes formed by the walls 30 of the structure 1 provided on the second level 1b and defining the cavities 2, by bean-shaped example, filled with metal elements 3.
  • the method of the invention can also be used to manufacture a watch component such as an oscillating weight for automatic winding, the metal element being placed at the periphery of the structure and serving to increase the unbalance / mass ratio of the oscillating weight. .
  • the oscillating mass comprises a structure formed of a thin and light central part corresponding to the first level of the structure and of a higher peripheral part corresponding to the second level.
  • the peripheral part of the structure comprises through cavities defined entirely by the structure and filled with metallic elements formed according to the method of the invention.
  • the cavity in which the metallic element is formed may be defined partially by the structure and partially by photosensitive resin.
  • the figure 5 shows for example an oscillating mass 36 obtained by such a variant of the method of the invention.
  • the oscillating mass 36 comprises a structure 38 formed of a thin central part 38a, light, corresponding to the first level of the structure 38 and of a higher peripheral part 38b corresponding to the second level of the structure 38.
  • the central part 38a comprises a hole 40 for mounting the oscillating weight 36.
  • the peripheral part 38b defines on the outside a peripheral surface 41 partially forming the cavity in which the metal element 42 is formed in the form of an extending arc of a circle over the entire length and the entire height of the peripheral wall 38b.
  • the step of forming the metallic element 42 consists in depositing the electro-formable material of the element 42 in a cavity defined on the one hand by the structure 38, and more specifically by its peripheral surface 41, and on the other hand by the photosensitive resin formed outside the structure 38, so that after the separation of the support 6 and the removal of said photosensitive resin, an element 42 appears, formed on said peripheral surface 41 of structure 38.
  • a circular metallic element could be formed according to this variant of the method of the invention on a peripheral surface of a silicon structure, continuously or discontinuously, to manufacture a balance, for example.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Micromachines (AREA)
EP19208589.2A 2019-11-12 2019-11-12 Verfahren zur herstellung einer uhrkomponente Active EP3822709B1 (de)

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EP19208589.2A EP3822709B1 (de) 2019-11-12 2019-11-12 Verfahren zur herstellung einer uhrkomponente

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Application Number Priority Date Filing Date Title
EP19208589.2A EP3822709B1 (de) 2019-11-12 2019-11-12 Verfahren zur herstellung einer uhrkomponente

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EP3822709A1 true EP3822709A1 (de) 2021-05-19
EP3822709B1 EP3822709B1 (de) 2024-04-17

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008135817A2 (fr) 2007-05-08 2008-11-13 Patek, Philippe Sa Composant horloger et son procédé de fabrication
EP2502877A1 (de) * 2011-03-23 2012-09-26 Patek Philippe SA Genève Verfahren zur Herstellung eines Verbundwerkstoffteils, insbesondere für Uhrwerk
CH710544A2 (fr) * 2014-12-19 2016-06-30 Swatch Group Res & Dev Ltd Procédé de réalisation d'un élément décoré d'une pièce d'horlogerie ou de bijouterie, et élément réalisé par le procédé.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008135817A2 (fr) 2007-05-08 2008-11-13 Patek, Philippe Sa Composant horloger et son procédé de fabrication
CH714952B1 (fr) * 2007-05-08 2019-10-31 Patek Philippe Sa Geneve Composant horloger, son procédé de fabrication et application de ce procédé.
EP2502877A1 (de) * 2011-03-23 2012-09-26 Patek Philippe SA Genève Verfahren zur Herstellung eines Verbundwerkstoffteils, insbesondere für Uhrwerk
CH710544A2 (fr) * 2014-12-19 2016-06-30 Swatch Group Res & Dev Ltd Procédé de réalisation d'un élément décoré d'une pièce d'horlogerie ou de bijouterie, et élément réalisé par le procédé.

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