EP3811141A1 - Vapor as a protectant and lifetime extender in optical systems - Google Patents

Vapor as a protectant and lifetime extender in optical systems

Info

Publication number
EP3811141A1
EP3811141A1 EP19856120.1A EP19856120A EP3811141A1 EP 3811141 A1 EP3811141 A1 EP 3811141A1 EP 19856120 A EP19856120 A EP 19856120A EP 3811141 A1 EP3811141 A1 EP 3811141A1
Authority
EP
European Patent Office
Prior art keywords
vapor
ppm
optical component
enclosure
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP19856120.1A
Other languages
German (de)
French (fr)
Other versions
EP3811141A4 (en
Inventor
David Jalil ZARE
Eduardo Soto
I-Fan Wu
Joseph Walsh
Kent MCKERNAN
Joseph Armstrong
Christopher Davis
Garry Rose
Damon Kvamme
Bernd Burfeindt
Ali Ehsani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/533,366 external-priority patent/US11624904B2/en
Application filed by KLA Corp filed Critical KLA Corp
Priority to EP26152192.6A priority Critical patent/EP4707929A3/en
Publication of EP3811141A1 publication Critical patent/EP3811141A1/en
Publication of EP3811141A4 publication Critical patent/EP3811141A4/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
    • G01N2021/151—Gas blown
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
    • G01N2021/158—Eliminating condensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
    • G01N2021/335—Vacuum UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors

Definitions

  • This disclosure relates to lifetime improvements for lasers and optical systems.
  • Fabricating semiconductor devices typically includes processing a semiconductor wafer using a large number of fabrication processes to form various features and multiple levels of the semiconductor devices.
  • lithography is a semiconductor fabrication process that involves transferring a pattern from a reticle to a photoresist arranged on a semiconductor wafer.
  • Additional examples of semiconductor fabrication processes include, but are not limited to, chemical-mechanical polishing (CMP), etch, deposition, and ion implantation.
  • CMP chemical-mechanical polishing
  • etch etch
  • deposition deposition
  • ion implantation ion implantation
  • Inspection processes are used at various steps during semiconductor manufacturing to detect defects on wafers to promote higher yield in the manufacturing process and, thus, higher profits. Inspection has always been an important part of fabricating semiconductor devices such as integrated circuits (ICs), However, as the dimensions of semiconductor devices decrease, inspection becomes even more important to the successful manufacture of acceptable semiconductor devices because smaller defects can cause the devices to fail. For instance, as the dimensions of ICs
  • Defect review typically involves re-detecting defects that were detected by an inspection process and generating additional information about the defects at a higher resolution using efrher a high magnification optical system or a scanning electron microscope (SEM). Defect review is typically performed at discrete locations on specimens where defects have been detected by inspection. The higher resolution data for the defects generated by defect review is more suitable ft* determining attributes of the defects such as profile, roughness, or more accurate size
  • Wafer inspcctionsystcms typically employ flhnninatioii sources of deep ukravioiet
  • illumination light may be provided by arnarc lamp.
  • electrode based, relatively high intensity discharge arc bmps are used in inspection systems.
  • flhmrination light is provided by a laser.
  • One approach to realize the desired abort wavelength emission has been the hannomc upconvereion of longer wavelength source».
  • vapor-free meant low ppb levels.
  • the physics and chemistry of these vapor-fiee purge gases can limit lifetimes for optics especially in high intensky condkious.
  • a system in a first embodiment
  • the system includes an optical component andan enclosure surrounding the optical component.
  • a vapor source is in fluid comoHtnicatioo with the enclosure.
  • Thevapor source provides a vapor to the enclosure with a vapor level from 500 ppm to 15000 ppm, wherein the vapor is one of water, methanol, ethylene glycol, or ethanol.
  • the optical component is one of CaFs, MgFi, Lff3 ⁇ 4 BaFa, SrFa, or
  • the optical component is one of Sued silica, quartz, a borate, germanium, silicon germanium, rutile, sapphire, silicon, YV0 4 , SrB 4 0 7 , or ZnSe.
  • the optical component is one of a borosilicate, an AMTR and zinc selenide material, SrB 4 0?, or YV0 4.
  • the vapor level can be from 500 ppm to less than 2000 ppm, from 500 ppm to less than 5000 ppm, or from greater than 5000 ppm to 15000 ppm.
  • the vapor for these ranges is water, but also may be methanol, ethylene glycol, or ethanol.
  • the vapor source can include a bubbler, a permeable membrane, a semi-permeable membrane, a charge mosaic member, or a bipolar membrane.
  • the permeable membrane can include Nafion or a polyamid.
  • the vapor source can include a gas source.
  • the gas source provides nitrogen, helium, carbon monoxide, carbon dioxide, krypton, argon, xenon, hydrogen, oxygen, compressed dry air, or a mixture thereof.
  • the gas from the gas source is mixed with the vapor.
  • the system can further include a vapor sensor disposed in fluid communication with the enclosure.
  • the vapor sensor is one of a carbon monoxide detector, a carbon dioxide detector, a hygrometer, or a hydrogen sensor.
  • the system also can include a processor in electronic
  • the processor is configured to adjust the vapor level in purge gas from the enclosure based on readings from the vapor sensor.
  • a method is provided in a second embodiment.
  • the method comprises flowing a vapor from a vapor source to an enclosure that surrounds an optical component.
  • a vapor level in the purge gas is maintained from 500 ppm to 15000 ppm, wherein the vapor is one of water, methanol, ethylene glycol, or ethanol.
  • the optical component may be one of CaF 2 , MgF 2 , LiF 2 , BaF 2 , SrF 2 , or BeF 2.
  • the vapor level may be from 500 ppm to less than 2000 ppm, from 500 ppm to less than 5000 ppm, or from greater than 5000 ppm to 15000 ppm.
  • the method can further include measuring the vapor level in the enclosure using a vapor sensor disposed in the enclosure. Maintaining the vapor level can be based on readings from the vapor sensor. DESCRIPTION OF THE DRAWINGS
  • FIG. 1 illustrates an optical component before exposure
  • PO. 2 illustrates test results of an optical component after 7 days of exposure without vapor
  • FIG. 3 flhutrates test results of an optical component after 68 days of exposure with vapor
  • FIG. 4 illustrates an observable different in surfhee dsmage/modification between a damage spot where no vapor was present and a damage spot where the vapor was present;
  • FIG. 5 is a btock diagram of an embodiment of a system in accordance with the present disclosure.
  • FIG. 6 is a. flowchart of an embodiment of a method in accordance w3 ⁇ 4h die present dadosure
  • FIG. 7 is a diagram showing a test system
  • FIG. 8 shows honestlyt the beam shape is changing and resulting surfhee damage and oxidation for a CaFi optical component
  • FIG. 9 illustrates a partially-damaged surfacc/subeurfacc
  • FIG. 10 is another flbstratkm of CaF2 damage.
  • Assorted vapor gases can help witboptics damage in semiconductor inspection took, semiconductor n3 ⁇ 4trok>gy tools, and other toob with optical components.
  • the chosen vapor or vapors may do more than merely serve as a cooling Enid to conduct had away from an object
  • the vapors can stop a process that damages die optics at the surface.
  • the vqpor can prevent the physics and chemistry of the damage from occurring. This contrasts w3 ⁇ 43 ⁇ 4 a previous beliefthat these vapors contributed to optics damage.
  • most of the tight-driven energy exchange may occur in the first approximately 50-100 nm of the optics. This can drive a larger material change that goes at least 1 micron into the surffcce of the optics.
  • the choice of vapor and its concentration can depend on the material die optic is made ftomand/br the wavelengths and intensity levels of the illumination light.
  • MgFa is water soluble, so a lower concentration of water may be needed or an alcohol may be used instead of water to avoid water damage to the MgFa optical component
  • water may be kept low enough to not cause solvation of the optical component, but high enough to stop the damage process.
  • Alcohols also can be used to prevent damage and alcohols may be less likely to cause solvation of the optical component.
  • water can be used instead of alcohol
  • An alcohol may grow contamination too quickly on the surface at this wavelength. Alcohols may work fine at low intensity, but at high intensity alcoho k may not stick to the surface well enough due to local heating. Thus, water may be used at high intensity because water has a much greater surftce sticking efficiency.
  • FIG. 1 illustrates an optical component before exposure to photons.
  • FIG. 2 illustrates test resufcs of an optical component after 7 days of exposure without vapor present.
  • a 10 nm bump formed in the center of the optical component This negatively affects operation and/or lifetime of the optical component
  • FIG.3 fflustrates test results of an optical component after 68 days of exposure with vapor present
  • the optical component of FIG. 3 does not illustrate damage like the optical component of FIG. 2.
  • the optical component ofFIG. 3 has approximately 0.1 nm surface roughening. In the example of FIG. 3, from 800 ppm to 2200 ppm vapor was used.
  • approximately 1/100 th of the surface damage occurs in IQx the time for this example.
  • Vapor can affect many mechanisms of damage, including reducing surface temperatures, blocking damaging surface chemistries (e g., oxidation), or affecting other drivers for the observed physical changes. These mechanisms are merely examples, and other mechanisms to improve optical component lifetime in the presence of vapor may be possible.
  • FIG. 4 illustrates an observable different in surface damage/modification between a damage spot where no vapor was present and a damage spot where the vapor was present.
  • the spot with the vapor shows no discernabie damage in a lOx longer time period than the site with no vapor present.
  • FIG. 5 is a block diagram of an embodiment of a system 100.
  • An optical component
  • the enclosure 102 surrounds the optical component. 101.
  • the optical component 101 may be one of a borosilicate, AMTR (manufactured by
  • the optical component 101 also may be one of fused silica of any grades and type, quartz, a borate (e.g., barium borate (BBO)), germanium, rutile, sapphire, silicon, YVOq, or ZnSe. Other materials are possible.
  • the optical component 101 may be used in operation at high fluence. 193 nm, 213 nm, 248 nm, 265 nm, 266 nm, or 2 pm light may be incident on the optical component 101. Broad band light from a bulb or open plasma source may be used. Other wavelengths are possible including more ionizing x-rays.
  • a vapor source 103 is in fluid communication with the enclosure 102.
  • the vapor source 103 provides vapor to the enclosure 102 with levels from ppb to high ppm levels (e.g., 10’s of thousands) to slow or halt optics or crystal damage .
  • the vapor le vel can be from 500 ppm to 15000 ppm, including all values to the 1.0 ppm and ranges between.
  • the vapor level is from 500 ppm. to leas than 2000 ppm.
  • die vapor level is approximately 2000 ppm. to yet another instance, the vapor level is approximately 5000 ppm.
  • the concentration of vapor in the environment can arrest the physics and/or chemistry that leads to optics damage For example, effects of high electric fields caused by intense laser Hght can be mitigated.
  • the rate of damage to die optics can be reduced by at least lDQx through use of the conect vapor/meterial combination in the optical environment as disclosed herein. For example, levels at 5000 ppm or more may be acceptable for CaFa, but may not be acceptable for MgFi.
  • Vapore can be added to the environment in gas form
  • the vapor source 103 can include a babbler.
  • Liquid evaporation can add a desired vapor concetiration to de gas purge.
  • Bubblers can produce a consistent amonnt of ⁇ 3 ⁇ 4por m die cnvHonment,
  • the vapor source 103 nmy be a pressurized gas cylinder.
  • the vapor source 103 also can use a permeable membrane.
  • the permeable membrane can include National, m polyamide, or other permeable materials ⁇
  • the permeable membrane which may be a tube, a diaphragm, or a wall adjacent to the environment, preferentially pulls targeted vapor from the adjacent vapor-rich reservoir into the controlled optical environment.
  • National is an example of a permeable membrane.
  • National allows polar molecules to pass from the vapor-rich air to a vapor-poor purge gas stream.
  • the vapor concentration in die purge gaa can be meaaurod and controlled to yield a specified concentration in the optical environment.
  • the permeable membrane also can be a nylon tt>polymer ofhigh-densky
  • the permeable membrane also can be an acetal, acrylonitrile, or functionalized polyvinyl chloride (PVQ.
  • the vapor source 103 also can use a semi-permeable membrane, a charge mosaic membrane, or a bipolar membrane. [0039] In an instance, the vapor source 103 includes a gas source 104.
  • the gas source 104 can provide one or more of nitrogen, helium, carbon monoxide, carbon dioxide, krypton, argon. xenon, hydrogen, oxygen, compressed dry air, or a mixture oftheae gases that is mixed whh. the vapor.
  • a vapor sensor 105 can be deposed in fluid communication wfrh the encloeure 102.
  • the vapor sensor 105 can be disposed in the enclosure 102 or akmg * vapor supply path to the enclosure 102.
  • the vapor sensor 105 mey be, for example, a hydrogen sensor, hygrometer, carbon monoxide detector, or a carbon dioxide detector.
  • a processor 106 cm be in electronic
  • Theprocessor 106 can adjust the vapor level in the enclosure based on readings from the vapor sensor 105.
  • Endwdiments of the system disclosed herein can be implemented on any laser system or plasma-baaed light source system.
  • FIG. 6 is a flowchart of an embodiment of a method 200.
  • a vapor-rich gas flows from a vapor source to an enclosure that surrounds an optical component at 201.
  • the optical component may be one of CaFa, MgF3 ⁇ 4 LiFa, BaFa, SrFa, BeFa, or other materials.
  • the environment around the optical component in the enclosure may include at least one of nitrogen, helium, caihon monoxide, carbon dioxide, krypton, argon, xenon, hydrogen, oxygen, or compressed dry air, or a mixture of these gases:
  • a vapor level in a gas is maintained from ppb levels to approximately the condensation concentration oflhe ⁇ vapor under atmospheric condition» of a use case (c,g., pressure, temperature, concentration ofyyor, and gss mixes therein), such as flom 500 ppm to 15000 ppm vapor.
  • the vapor levels are flom 500 ppm to less than 2000 ppm vapor.
  • the vapor level is from greater than 5000 ppm to 15000 ppm.
  • a vapor level is from greater than 5000 ppm to 15000 ppm can provide improved results for a CaFa optical component and i vapor level from 500 ppm to less than 2000 ppm can provide improved resuhs for MgFa.
  • the vapor level is from greater than 6000 ppm to 15000 ppm, from greater than 7000 ppm to 15000 ppm, from greater than 8000 ppm to 15000 ppm, from greater than 9000 ppm to 15000 ppm, from greater than 10000 ppm to 15000 ppm, from greater than 11000 ppm to 15000 ppm, from greeter than 12000 ppm to 15000 ppm, from greater than 13000 ppm to 15000 ppm, or from greater than 14000 ppm to 15000 ppm.
  • T3 ⁇ 4e vapor level may be added to the gas or maintained in the gas using a bubbler or a permeable membrane.
  • the vapor level in the enclosure is measured using a vapor sensor disposed in the enclosure. The vapor level in the enclosure may be adjusted based cm readings from the vapor sensor.
  • FIG.7 a a block diagran ⁇ fan experiment using a test system.
  • Cleaq dry air (CD A) and Nj flow through separate needle valves to a purifier.
  • the CDA and Ni may be regulated to 30 psi
  • the C1)A and Na flow to a bubbler and then a sensor, which can include an 0» meter and a vapor sensor.
  • the resulting gas is used aa input and can be mixed with the vapor.
  • FIG. 8 shows that the beam shape 1 ⁇ 2 changing and resulting surfhee damage and oxidation for a CaFa optical component
  • FIG.9 ilhistratee a partially-damaged suriace/subeurlhce.
  • FIG. 10 « another illustration ofCaF* damage. Aa seen m FIG. 10, damage can lead to beam shape change.
  • polar molecules can be used as the vapor to arrest optica damage.
  • water, methanol, ethylene glycol, or ethanol may be used.

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  • Life Sciences & Earth Sciences (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)
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  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Optical Fibers, Optical Fiber Cores, And Optical Fiber Bundles (AREA)
  • Surface Treatment Of Glass Fibres Or Filaments (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An enclosure surrounding the optical component can be connected with a vapor source. The vapor source can provide a vapor to the enclosure with a vapor level from 500 ppm to 15000 ppm. The concentration of vapor in the enclosure can increase the lifespan of the optical component in the enclosure.

Description

VAPOR AS A PROTECTANT AND LIFETIME EXTENDER IN OPTICAL SYSTEMS
FIELD OF THE DISCLOSURE
[0001] This disclosure relates to lifetime improvements for lasers and optical systems.
BACKGROUND OF THE DISCLOSURE
[0002] Evolution of the semiconductor manufacturing industry is placing greater demands on yield management and, in particular, on metrology and inspection systems. Critical dimensions continue to shrink, yet the industry needs to decrease time for achieving high-yield, high-value production. Minimizing the total time from detecting a yield problem to fixing it determines the retum-on-investment for a semiconductor manufacturer.
[0003] Fabricating semiconductor devices, such as logic and memory devices, typically includes processing a semiconductor wafer using a large number of fabrication processes to form various features and multiple levels of the semiconductor devices. For example, lithography is a semiconductor fabrication process that involves transferring a pattern from a reticle to a photoresist arranged on a semiconductor wafer. Additional examples of semiconductor fabrication processes include, but are not limited to, chemical-mechanical polishing (CMP), etch, deposition, and ion implantation. Multiple semiconductor devices may be fabricated in an arrangement on a single semiconductor wafer that are separated into individual semiconductor devices.
[0004] Inspection processes are used at various steps during semiconductor manufacturing to detect defects on wafers to promote higher yield in the manufacturing process and, thus, higher profits. Inspection has always been an important part of fabricating semiconductor devices such as integrated circuits (ICs), However, as the dimensions of semiconductor devices decrease, inspection becomes even more important to the successful manufacture of acceptable semiconductor devices because smaller defects can cause the devices to fail. For instance, as the dimensions of
semiconductor devices decrease, detection of defects of decreasing size has become necessary because even relatively small defects may cause unwanted aberrations in the semiconductor devices.
[0005] Defect review typically involves re-detecting defects that were detected by an inspection process and generating additional information about the defects at a higher resolution using efrher a high magnification optical system or a scanning electron microscope (SEM). Defect review is typically performed at discrete locations on specimens where defects have been detected by inspection. The higher resolution data for the defects generated by defect review is more suitable ft* determining attributes of the defects such as profile, roughness, or more accurate size
information.
[0000] Wafer inspcctionsystcms typically employ flhnninatioii sources of deep ukravioiet
(DUV) radiation wfch wavelengths as short as 260 nanometers wfth a high numerical aperture (NA). Wavelengths of 193 nanometers or even 120 ran also can be used. In some examples, illumination light may be provided by arnarc lamp. For example, electrode based, relatively high intensity discharge arc bmps are used in inspection systems. In some other examples, flhmrination light is provided by a laser. One approach to realize the desired abort wavelength emission has been the hannomc upconvereion of longer wavelength source».
[0007] Optics and laser lifetime improvements are needed to enable next generation semicondBCtor manufacturing. Previously, a vapor-ftee gas was need to prevent damage to die optical components in. inspection systems. For water, vqpor-ftee meant 20 ppm or less of water.
For other species, vapor-free meant low ppb levels. The physics and chemistry of these vapor-fiee purge gases can limit lifetimes for optics especially in high intensky condkious.
[0000] Therefore, improved technique» for optics end laser lifetime improvements ere
BRIEF SUMMARY OF THE DISCLOSURE
[0069] A system is provided in a first embodiment The system includes an optical component andan enclosure surrounding the optical component. A vapor source is in fluid comoHtnicatioo with the enclosure. Thevapor source provides a vapor to the enclosure with a vapor level from 500 ppm to 15000 ppm, wherein the vapor is one of water, methanol, ethylene glycol, or ethanol.
[0010] In an instance, the optical component is one of CaFs, MgFi, Lff¾ BaFa, SrFa, or
BeFa. In another instance, the optical component is one of Sued silica, quartz, a borate, germanium, silicon germanium, rutile, sapphire, silicon, YV04, SrB407, or ZnSe. In yet another instance, the optical component is one of a borosilicate, an AMTR and zinc selenide material, SrB40?, or YV04.
[0011] The vapor level can be from 500 ppm to less than 2000 ppm, from 500 ppm to less than 5000 ppm, or from greater than 5000 ppm to 15000 ppm. In an instance, the vapor for these ranges is water, but also may be methanol, ethylene glycol, or ethanol.
[0012] The vapor source can include a bubbler, a permeable membrane, a semi-permeable membrane, a charge mosaic member, or a bipolar membrane. The permeable membrane can include Nafion or a polyamid.
[0013] The vapor source can include a gas source. The gas source provides nitrogen, helium, carbon monoxide, carbon dioxide, krypton, argon, xenon, hydrogen, oxygen, compressed dry air, or a mixture thereof. The gas from the gas source is mixed with the vapor.
[0014] The system can further include a vapor sensor disposed in fluid communication with the enclosure. The vapor sensor is one of a carbon monoxide detector, a carbon dioxide detector, a hygrometer, or a hydrogen sensor. The system also can include a processor in electronic
communication with the vapor sensor. The processor is configured to adjust the vapor level in purge gas from the enclosure based on readings from the vapor sensor.
[0015] A method is provided in a second embodiment. The method comprises flowing a vapor from a vapor source to an enclosure that surrounds an optical component. A vapor level in the purge gas is maintained from 500 ppm to 15000 ppm, wherein the vapor is one of water, methanol, ethylene glycol, or ethanol.
[0016] The optical component may be one of CaF2, MgF2, LiF2, BaF2, SrF2, or BeF2.
[0017] The vapor level may be from 500 ppm to less than 2000 ppm, from 500 ppm to less than 5000 ppm, or from greater than 5000 ppm to 15000 ppm.
[0018] The method can further include measuring the vapor level in the enclosure using a vapor sensor disposed in the enclosure. Maintaining the vapor level can be based on readings from the vapor sensor. DESCRIPTION OF THE DRAWINGS
[0019] For a foller understanding of the nature and objects ofthe disclosure, reference should be made to die following detailed description taken in conjunction with the accompanying drawings, in which: FIG. 1 illustrates an optical component before exposure;
PO. 2 illustrates test results of an optical component after 7 days of exposure without vapor,
FIG. 3 flhutrates test results of an optical component after 68 days of exposure with vapor;
FIG. 4 illustrates an observable different in surfhee dsmage/modification between a damage spot where no vapor was present and a damage spot where the vapor was present;
FIG. 5 is a btock diagram of an embodiment of a system in accordance with the present disclosure;
FIG. 6 is a. flowchart of an embodiment of a method in accordance w¾h die present dadosure; FIG. 7 is a diagram showing a test system;
FIG. 8 shows ihrt the beam shape is changing and resulting surfhee damage and oxidation for a CaFi optical component;
FIG. 9 illustrates a partially-damaged surfacc/subeurfacc; and
FIG. 10 is another flbstratkm of CaF2 damage.
DETAILED DESCRIPTION OF THE DISCLOSURE
[0020] Although claimed subject matter will be described in terms of certain embodiments, other embodiments, including embodiments that do not provide aO of the benefits and features set forth herein, are mho wkhin the scope of this declosure. Various structural, logical, process step, and electronic changes may be made whhout departing from the scope of the disclosure.
Accordingly, the scope ofthe disclosure is defined only by reference to the appended claims.
[0021] Assorted vapor gases can help witboptics damage in semiconductor inspection took, semiconductor n¾trok>gy tools, and other toob with optical components. The chosen vapor or vapors may do more than merely serve as a cooling Enid to conduct had away from an object In the embodiments disclosed heron, the vapors can stop a process that damages die optics at the surface. Thus, the vqpor can prevent the physics and chemistry of the damage from occurring. This contrasts w¾¾ a previous beliefthat these vapors contributed to optics damage. [0022] Through experiments, it was determined that some vapors stopped or decreased the rate of surihee and near-surftce damage on optics where a strong field was present that damaged the optics and caused the propagatmg laser beam to change shape (e.g., the recognition of damage) or affected other measurable qpueHtiee of the propagrting laser beam. In this physics and chemistry, adding vapors to the area surrounding a laser crystal or optics can help stabilize and prolong the Kfe of a laser crystal and optica.
[0023] For near-surficedamagei most of the tight-driven energy exchange may occur in the first approximately 50-100 nm of the optics. This can drive a larger material change that goes at least 1 micron into the surffcce of the optics. [0024] The choice of vapor and its concentration can depend on the material die optic is made ftomand/br the wavelengths and intensity levels of the illumination light. For example, MgFa is water soluble, so a lower concentration of water may be needed or an alcohol may be used instead of water to avoid water damage to the MgFa optical component In another example using water- sohible optical components, water may be kept low enough to not cause solvation of the optical component, but high enough to stop the damage process. Other vapors such as alcohols also can be used to prevent damage and alcohols may be less likely to cause solvation of the optical component. In yet another example, if 193 mn light is used, then water can be used instead of alcohol An alcohol may grow contamination too quickly on the surface at this wavelength. Alcohols may work fine at low intensity, but at high intensity alcoho k may not stick to the surface well enough due to local heating. Thus, water may be used at high intensity because water has a much greater surftce sticking efficiency.
[0025] As an example, adding vapor to the environment around an optical component, ao optical component that typically lags only 5-10 days before being damaged beyond the specification will last noticeably longer. FIG. 1 illustrates an optical component before exposure to photons. FIG. 2 illustrates test resufcs of an optical component after 7 days of exposure without vapor present. A 10 nm bump formed in the center of the optical component This negatively affects operation and/or lifetime of the optical component FIG.3 fflustrates test results of an optical component after 68 days of exposure with vapor present The optical component of FIG. 3 does not illustrate damage like the optical component of FIG. 2. The optical component ofFIG. 3 has approximately 0.1 nm surface roughening. In the example of FIG. 3, from 800 ppm to 2200 ppm vapor was used. Thus, by exposing the optical component to the vapor, approximately 1/100th of the surface damage occurs in IQx the time for this example.
[0026] Vapor can affect many mechanisms of damage, including reducing surface temperatures, blocking damaging surface chemistries (e g., oxidation), or affecting other drivers for the observed physical changes. These mechanisms are merely examples, and other mechanisms to improve optical component lifetime in the presence of vapor may be possible.
[0027] FIG. 4 illustrates an observable different in surface damage/modification between a damage spot where no vapor was present and a damage spot where the vapor was present. The spot with the vapor shows no discernabie damage in a lOx longer time period than the site with no vapor present.
[0028] FIG. 5 is a block diagram of an embodiment of a system 100. An optical component
101 is disposed in an enclosure 102. The enclosure 102 surrounds the optical component. 101.
[0029] The optical component 101 may be one of a borosilicate, AMTR (manufactured by
Newport) and zinc selenide materials, silicon germanium, sapphire, MgF2, LiF2, CaF2, BaF2, SrF2, SrEkO? (SBO), or BeF2. The optical component 101 also may be one of fused silica of any grades and type, quartz, a borate (e.g., barium borate (BBO)), germanium, rutile, sapphire, silicon, YVOq, or ZnSe. Other materials are possible.
[0030] The optical component 101 may be used in operation at high fluence. 193 nm, 213 nm, 248 nm, 265 nm, 266 nm, or 2 pm light may be incident on the optical component 101. Broad band light from a bulb or open plasma source may be used. Other wavelengths are possible including more ionizing x-rays.
[0031] A vapor source 103 is in fluid communication with the enclosure 102. The vapor source 103 provides vapor to the enclosure 102 with levels from ppb to high ppm levels (e.g., 10’s of thousands) to slow or halt optics or crystal damage . For example, the vapor le vel can be from 500 ppm to 15000 ppm, including all values to the 1.0 ppm and ranges between. [0032] Inaninstance, the vapor level is from 500 ppm. to leas than 2000 ppm. In yet another instance, die vapor level is approximately 2000 ppm. to yet another instance, the vapor level is approximately 5000 ppm. The concentration of vapor in the environment can arrest the physics and/or chemistry that leads to optics damage For example, effects of high electric fields caused by intense laser Hght can be mitigated. The rate of damage to die optics can be reduced by at least lDQx through use of the conect vapor/meterial combination in the optical environment as disclosed herein. For example, levels at 5000 ppm or more may be acceptable for CaFa, but may not be acceptable for MgFi.
[0033] Vapore can be added to the environment in gas form For example, the vapor source 103 can include a babbler. Liquid evaporation can add a desired vapor concetiration to de gas purge. Bubblers can produce a consistent amonnt of \¾por m die cnvHonment,
[0034] The vapor source 103 nmy be a pressurized gas cylinder.
[0035] The vapor source 103 also can use a permeable membrane. The permeable membrane can include Nation, m polyamide, or other permeable materials· The permeable membrane, which may be a tube, a diaphragm, or a wall adjacent to the environment, preferentially pulls targeted vapor from the adjacent vapor-rich reservoir into the controlled optical environment.
[0036] Nation is an example ofa permeable membrane. Nation allows polar molecules to pass from the vapor-rich air to a vapor-poor purge gas stream. The vapor concentration in die purge gaa can be meaaurod and controlled to yield a specified concentration in the optical environment.
[0037] The permeable membrane also can be a nylon tt>polymer ofhigh-densky
polyethylene (HDPB) or a polyolefin. The permeable membrane also can be an acetal, acrylonitrile, or functionalized polyvinyl chloride (PVQ.
[0030] The vapor source 103 also can use a semi-permeable membrane, a charge mosaic membrane, or a bipolar membrane. [0039] In an instance, the vapor source 103 includes a gas source 104. The gas source 104 can provide one or more of nitrogen, helium, carbon monoxide, carbon dioxide, krypton, argon. xenon, hydrogen, oxygen, compressed dry air, or a mixture oftheae gases that is mixed whh. the vapor.
[0040] A vapor sensor 105 can be deposed in fluid communication wfrh the encloeure 102.
The vapor sensor 105 can be disposed in the enclosure 102 or akmg * vapor supply path to the enclosure 102. The vapor sensor 105 mey be, for example, a hydrogen sensor, hygrometer, carbon monoxide detector, or a carbon dioxide detector. A processor 106 cm be in electronic
communication with the vapor sensor 105. Theprocessor 106 can adjust the vapor level in the enclosure based on readings from the vapor sensor 105.
[0041] Endwdiments of the system disclosed herein can be implemented on any laser system or plasma-baaed light source system.
[0042] FIG. 6 is a flowchart of an embodiment of a method 200. A vapor-rich gas flows from a vapor source to an enclosure that surrounds an optical component at 201. The optical component may be one of CaFa, MgF¾ LiFa, BaFa, SrFa, BeFa, or other materials. The environment around the optical component in the enclosure may include at least one of nitrogen, helium, caihon monoxide, carbon dioxide, krypton, argon, xenon, hydrogen, oxygen, or compressed dry air, or a mixture of these gases:
[MM3] At 202, a vapor level in a gas is maintained from ppb levels to approximately the condensation concentration oflhe· vapor under atmospheric condition» of a use case (c,g., pressure, temperature, concentration ofyyor, and gss mixes therein), such as flom 500 ppm to 15000 ppm vapor. In an instance, the vapor levels are flom 500 ppm to less than 2000 ppm vapor. In another instance, the vapor level is from greater than 5000 ppm to 15000 ppm. For example, a vapor level is from greater than 5000 ppm to 15000 ppm can provide improved results for a CaFa optical component and i vapor level from 500 ppm to less than 2000 ppm can provide improved resuhs for MgFa. [0044] Ini particular embodiment, the vapor level is from greater than 6000 ppm to 15000 ppm, from greater than 7000 ppm to 15000 ppm, from greater than 8000 ppm to 15000 ppm, from greater than 9000 ppm to 15000 ppm, from greater than 10000 ppm to 15000 ppm, from greater than 11000 ppm to 15000 ppm, from greeter than 12000 ppm to 15000 ppm, from greater than 13000 ppm to 15000 ppm, or from greater than 14000 ppm to 15000 ppm.
[0045] T¾e vapor level may be added to the gas or maintained in the gas using a bubbler or a permeable membrane. [0046] In an instance, the vapor level in the enclosure is measured using a vapor sensor disposed in the enclosure. The vapor level in the enclosure may be adjusted based cm readings from the vapor sensor.
[0047] FIG.7 a a block diagran^fan experiment using a test system. Cleaq dry air (CD A) and Nj flow through separate needle valves to a purifier. The CDA and Ni may be regulated to 30 psi After the purifier, the C1)A and Na flow to a bubbler and then a sensor, which can include an 0» meter and a vapor sensor. The resulting gas is used aa input and can be mixed with the vapor.
[0048] FIG. 8 shows that the beam shape ½ changing and resulting surfhee damage and oxidation for a CaFa optical component
[0049] FIG.9 ilhistratee a partially-damaged suriace/subeurlhce. [0050] FIG. 10 « another illustration ofCaF* damage. Aa seen m FIG. 10, damage can lead to beam shape change.
[0051] Many polar molecules can be used as the vapor to arrest optica damage. For example, water, methanol, ethylene glycol, or ethanol may be used.
[0052] Although the present disclosure has been described with respect to one or more particular embodiments, it wdl be understood that other embodiments of the present disclosure may be made without departing from the scope of the present disclosure. Hence, the present disclosure is deemed Hmitod only by the appended claims and flic reasonable interpretation thereof

Claims

What is claimed is:
1. A system comprising:
an optical component;
an enclosure surrounding the optical component; and
a vapor source in fluid communication with the enclosure, wherein the vapor source provides a vapor to the enclosure with a vapor level from 500 ppm to 15000 ppm, wherein the vapor is one of water, methanol, ethylene glycol, or ethanol.
2. The system of claim 1, wherein the optical component is one of CaF2, Mg FA LiF2, BalA, Sr FA or BeF2.
3. The system of claim 1, wherein the optical component is one of fused silica, quartz, a borate, germanium, silicon germanium, rutile, sapphire, silicon, YVO4, SrB407, or ZnSe.
4. The system of claim 1 , wherein the optical component is one of a borosilicate, an AMTR and zinc selenide material, SrB407, or YVO4.
5. The system of claim 1 , wherein the vapor is water.
6. The system of claim 1 , wherein the vapor level is from 500 ppm to less than 5000 ppm.
7. The system of claim 1 , wherein the vapor level is from greater than 5000 ppm to 15000 ppm.
8. The system of claim 1 , wherein the vapor source includes a bubbler .
9. The system of claim 1 , wherein the vapor source includes a permeable membrane, and wherein the permeable membrane includes Nation or a polyamid.
10. The system of claim 1 , wherein the vapor source includes a semi-permeable membrane.
11. The system of claim 1 , wherein the vapor source includes a charge mosaic membrane or a
bipolar membrane.
12. The system of claim 1, wherein the vapor source includes a gas source, wdierein the gas source provides nitrogen, helium, carbon monoxide, carbon dioxide, krypton, argon, xenon, hydrogen. oxygen, compressed dry air, or a mixture thereof wherein the gas from the gas source is mixed with the vapor.
13. The system of claim 1, finther conrrising a vapor senam disposed in fluid communication wfch die enclosure, wherein the vapor sensor is one ofa carbon monoxide detector, a carbon dioxide detector, a hygrometer, or a hyfoogen senaor.
14. The system of claim 13, farther conprising a processor in electronic communication with the vapor sensor, wherein the processor is configured to adjust the vapor level in purge gas from the enclosure baaed on readings from the vapor sensor.
15. A method comprising:
flowing a vapor from a vapor source to an enclosure that surrounds an optical component; and maintaining a vapor level in the purge gas from 500 ppm to 15000 ppm, wherein the vapor is one of water, methanol, ethylene glycol, orethanoL
16. The method of claim 15, wherein the optical component is one ofCsFa, MgF¼ LEz, BaF¾ Sift, or BeFa.
17. The method of claim 15, wherein the vapor level is from 500 ppm to less than 2000 ppm.
18. The method of claim IS, wherein the vapor level is from greater than 5000 ppm to 15000 ppm.
19. The method of claim 15, father comprising measuring the vapor level in the enclosure using a vapor sensor disposed in the enclosure.
20. The method of chim 19, wherem die maintaining is based on readings from the vqpor sensor.
EP19856120.1A 2018-08-27 2019-08-23 VAPOR USED AS A PROTECTIVE AND LIFE-EXTENDING AGENT IN OPTICAL SYSTEMS Ceased EP3811141A4 (en)

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KR20210038687A (en) 2021-04-07
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