EP3632097A4 - Geteilte photodiodenrücksetzung in einem 5-transistor vier geteilte pixel - Google Patents

Geteilte photodiodenrücksetzung in einem 5-transistor vier geteilte pixel Download PDF

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Publication number
EP3632097A4
EP3632097A4 EP18809391.8A EP18809391A EP3632097A4 EP 3632097 A4 EP3632097 A4 EP 3632097A4 EP 18809391 A EP18809391 A EP 18809391A EP 3632097 A4 EP3632097 A4 EP 3632097A4
Authority
EP
European Patent Office
Prior art keywords
shared
transistor
photodiode reset
pixel
shared pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP18809391.8A
Other languages
English (en)
French (fr)
Other versions
EP3632097A1 (de
Inventor
Jeroen Rotte
Petrus Gijsbertus Centen
Amaud DEFERNEZ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Grass Valley Canada ULC
Original Assignee
Grass Valley Canada ULC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/697,349 external-priority patent/US10270987B2/en
Priority claimed from US15/991,116 external-priority patent/US10531034B2/en
Application filed by Grass Valley Canada ULC filed Critical Grass Valley Canada ULC
Publication of EP3632097A1 publication Critical patent/EP3632097A1/de
Publication of EP3632097A4 publication Critical patent/EP3632097A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
EP18809391.8A 2017-05-30 2018-05-30 Geteilte photodiodenrücksetzung in einem 5-transistor vier geteilte pixel Withdrawn EP3632097A4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762512399P 2017-05-30 2017-05-30
US15/697,349 US10270987B2 (en) 2016-09-08 2017-09-06 System and methods for dynamic pixel management of a cross pixel interconnected CMOS image sensor
US15/991,116 US10531034B2 (en) 2016-09-08 2018-05-29 Shared photodiode reset in a 5 transistor-four shared pixel
PCT/CA2018/050636 WO2018218354A1 (en) 2017-05-30 2018-05-30 Shared photodiode reset in a 5 transistor - four shared pixel

Publications (2)

Publication Number Publication Date
EP3632097A1 EP3632097A1 (de) 2020-04-08
EP3632097A4 true EP3632097A4 (de) 2020-12-30

Family

ID=64454344

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18809391.8A Withdrawn EP3632097A4 (de) 2017-05-30 2018-05-30 Geteilte photodiodenrücksetzung in einem 5-transistor vier geteilte pixel

Country Status (3)

Country Link
EP (1) EP3632097A4 (de)
CA (1) CA3065343A1 (de)
WO (1) WO2018218354A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112020002523T5 (de) 2019-05-24 2022-03-24 Sony Semiconductor Solutions Corporation Festkörper-bildgebungsvorrichtung und abstandsmessvorrichtung
CN110336964B (zh) * 2019-06-11 2022-03-25 Oppo广东移动通信有限公司 一种cmos图像传感器及图像处理方法、存储介质
CN113271419B (zh) * 2021-05-20 2023-05-09 上海韦尔半导体股份有限公司 低pls全局快门像素结构及其驱动时序控制方法
US20240107195A1 (en) * 2022-09-23 2024-03-28 Samsung Electronics Co., Ltd. Image sensor and image processing device including the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007089231A (ja) * 2003-02-13 2007-04-05 Matsushita Electric Ind Co Ltd 固体撮像装置、その駆動方法及びそれを用いたカメラ
WO2009054962A1 (en) * 2007-10-24 2009-04-30 Altasens, Inc. Global shutter pixel circuit with transistor sharing for cmos image sensors
US20140247378A1 (en) * 2013-03-01 2014-09-04 Apple Inc. Exposure control for image sensors
US20140320718A1 (en) * 2013-01-31 2014-10-30 Apple Inc. Vertically Stacked Image Sensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809766B1 (en) * 1998-03-11 2004-10-26 Micro Technology, Inc. Look ahead rolling shutter system in CMOS sensors
US20100309340A1 (en) * 2009-06-03 2010-12-09 Border John N Image sensor having global and rolling shutter processes for respective sets of pixels of a pixel array
US8471315B1 (en) * 2011-01-31 2013-06-25 Aptina Imaging Corporation CMOS image sensor having global shutter pixels built using a buried channel transfer gate with a surface channel dark current drain
US9686486B2 (en) * 2015-05-27 2017-06-20 Semiconductor Components Industries, Llc Multi-resolution pixel architecture with shared floating diffusion nodes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007089231A (ja) * 2003-02-13 2007-04-05 Matsushita Electric Ind Co Ltd 固体撮像装置、その駆動方法及びそれを用いたカメラ
WO2009054962A1 (en) * 2007-10-24 2009-04-30 Altasens, Inc. Global shutter pixel circuit with transistor sharing for cmos image sensors
US20140320718A1 (en) * 2013-01-31 2014-10-30 Apple Inc. Vertically Stacked Image Sensor
US20140247378A1 (en) * 2013-03-01 2014-09-04 Apple Inc. Exposure control for image sensors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2018218354A1 *

Also Published As

Publication number Publication date
EP3632097A1 (de) 2020-04-08
WO2018218354A1 (en) 2018-12-06
CA3065343A1 (en) 2018-12-06

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