EP3545332A2

EP3545332A2 - Mems scanning module for a light scanner

Info

Publication number: EP3545332A2
Application number: EP17808314.3A
Authority: EP
Inventors: Florian Petit
Original assignee: Blickfeld GmbH
Current assignee: Blickfeld GmbH
Priority date: 2016-11-23
Filing date: 2017-11-22
Publication date: 2019-10-02
Also published as: JP2020506437A; US20200183150A1; JP6933401B2; DE102016014001B4; US11143858B2; DE102016014001A1; CN110312944B; WO2018095486A3; CN110312944A; WO2018095486A2

Abstract

The invention relates to a scanning module (100) for a light scanner (99), comprising a base (141) and an interface element (142) that is configured to secure a mirror surface (151). The scanning module (100) also comprises at least one support element (101, 102) that extends between the base (141) and the interface element (142) and has an extension perpendicular to the mirror surface (151) of no less than 0.7 mm. The base (141), the interface element (142) and the at least one support element (101) are made as a single piece.

Description

MEMS scanning module for a light scanner TECHNICAL AREA

The invention generally relates to a scanning module for a light scanner. In particular, the invention relates to a scanning module having at least one elastic support member extending between a base and an interface member for fixing a mirror surface and having an extension perpendicular to the mirror surface which is not smaller than 0.7 mm. This allows resonant scanning.

BACKGROUND Distance measurement of objects is desirable in various fields of technology. For example, in the context of autonomous driving applications, it may be desirable to detect objects around vehicles and, in particular, to determine a distance to the objects. One technique for measuring the distance of objects is the so-called LIDAR technology (light detection and ranging, sometimes also LADAR). In this case, pulsed laser light is emitted by an emitter. The objects in the environment reflect the laser light. These reflections can then be measured. By determining the transit time of the laser light, a distance to the objects can be determined.

In order to detect the objects in the environment spatially resolved, it may be possible to scan the laser light. Depending on the beam angle of the laser light different objects in the environment can be detected. Microelectromechanical (MEMS) devices can be used to implement a laser scanner. See, e.g. DE 10 2013 223 937 A1. In this case, a mirror is typically connected to a substrate via lateral spring elements. The mirror and the spring elements are manufactured in one piece or integrated with the substrate. The mirror is released from a wafer by suitable etching processes.

However, such techniques have certain disadvantages and limitations. For example, the scan angle is often comparatively limited and is, for example, of the order of magnitude from 20 ° - 60 °. In addition, the usable mirror surface is often limited; typical mirrors can have a side length of 1 mm - 3 mm. Therefore, with LIDAR techniques, the detector aperture may be limited; This ensures that only comparatively close objects can be reliably measured.

To compensate for these disadvantages, it is known to operate several mirrors synchronized. See, e.g. Sandner, Thilo, et al. "Large aperture MEMS scanner module for 3D distance measurement." MOEMS-MEMS. International Society for Optics and Photonics, 2010. However, the synchronization can be comparatively complicated. In addition, it may not or only partially be possible to implement two-dimensional scanning. Again, the scan angle is limited.

BRIEF SUMMARY OF THE INVENTION

Therefore, there is a need for improved techniques for measuring the distance of objects around a device. In particular, there is a need for such techniques which overcome at least some of the above limitations and disadvantages. This object is solved by the features of the independent claim. The dependent claims define embodiments.

In one example, a scan module for a light scanner includes a base and an interface element. The interface element is arranged to fix a mirror surface. The scan module also includes at least one elastic support member extending between the base and the interface member and having an extension perpendicular to the mirror surface that is not less than 0.7 mm. The base, the interface element and the at least one support element are integrally formed. Because the at least one support element is elastic, it may also be referred to as a spring element. As a result, at least one degree of freedom of movement of the at least one support element can be excited resonantly. This corresponds to the resonant operation of the light scanner (English, resonant scanner). This is in contrast to non-resonantly driven light scanners, eg with ball bearings for a constant rotating movement or stepper motors. For example, it would be possible for the at least one support element to have an extension perpendicular to the base that is not smaller than 1 mm, optionally not smaller than 3.5 mm, further optional not smaller than 7 mm. Because the at least one support element has a significant extent perpendicular to the mirror surface, it can be called a vertically oriented support element, unlike the lateral spring elements in the prior art. By means of such an arrangement, particularly large scan angles can be generated, for example in the range of 120 ° -180 °.

In some examples, it would be possible for the scan module to have at least two support elements. The scanning module could comprise at least three support elements, optionally at least four support elements. This makes it possible to generate particularly robust and less susceptible to vibration scan modules.

For example, it would be possible that the longitudinal axes of the at least two support elements in each case include pairs of angles which are not greater than 45 °, optionally not greater than 10 °, further optionally not greater than 1 °. This means that the at least two support elements can be arranged parallel or substantially parallel to each other.

The at least two support elements could have an arrangement with rotational symmetry with respect to a central axis. It would be possible for the rotational symmetry to be n-counted, where n denotes the number of at least two support elements. This makes it possible to avoid non-linear effects during resonant operation of the light scanner.

For resonant operation of the light scanner, at least one degree of freedom of movement of the at least one support element can be excited.

The at least one degree of freedom of the movement could comprise a transverse mode and a torsional mode, wherein the natural frequency of the lowest transverse mode is greater than the natural frequency of the lowest torsional mode.

The at least one degree of freedom of movement could comprise a transverse mode and a torsional mode, wherein the lowest transverse mode is degenerate with the lowest torsional mode. This can be achieved that the scan module is particularly robust against external stimuli. The torsional mode may correspond to a twist of the at least two support elements. The torsional mode may denote a twist of each individual support element along the respective longitudinal axis. Optionally, the torsional mode may also designate a twist of several support elements into one another.

It would be possible for the distance between two adjacent support elements of the at least two support elements to be in the range of 2% to 50% of the length of at least one of the at least two support elements, optionally in the range of 10% to 40%, further optionally in the range of 12. 20%. This can allow a compact design and an adapted frequency of the torsional mode.

It would be possible that the at least two support elements have lengths that do not deviate from each other by more than 10%, optionally not more than 2%, further optionally not more than 0.1%.

For example, it would be possible for the scan module to have a balance weight. The balance weight may be attached to at least one of the at least one interface element. The balancing weight can in particular be formed integrally with the at least one interface element. For example, it would be possible for the balancing weight to be implemented by a change in the cross-sectional area along the longitudinal axis of the at least one interface element. The balance weight can be used to change the mass moment of inertia. As a result, the frequency of the torsional mode of the at least one interface element can be adapted to the frequency of the transverse modes of the at least one interface element. Depending on the design of the balance weight, it would e.g. also possible that a degeneracy of the natural frequencies of the orthogonal transversal modes of the at least one interface element is canceled.

In one example, the scanning module includes a first bending piezoactuator, a second bending piezoactuator, and the base disposed between the first bending piezoactuator and the second bending piezoactuator. The Biegepiezoaktuatoren could thus stimulate the at least one support element coupled via the base.

In this case, the first Biegepiezoaktuator could have an elongated shape along a first longitudinal axis and the second Biegepiezoaktuator could have an elongated shape along a second longitudinal axis. The first longitudinal axis and the second longitudinal axis could include an angle smaller than 20 °, optionally less than 10 °, further optionally less than 1 °.

The first longitudinal axis and / or the second longitudinal axis could include an angle with a longitudinal axis of the at least one support member that is less than 20 °, optionally less than 10 °, further optionally less than 1 °. Alternatively, it would also be possible for the first longitudinal axis and / or the second longitudinal axis to include an angle with a longitudinal axis of the at least one support element which is in the range of 90 ° ± 20 °, optionally in the range of 90 ° ± 10 °, further optional in the range of 90 ° ± 1 °. The base could have a longitudinal extent along a first longitudinal axis of the first bending piezoactuator that is in the range of 2 to 20% of the length of the first bending piezoactuator along the first longitudinal axis, optionally in the range of 5 to 15%. In this way, particularly large scan angles can be achieved and efficient excitation of different degrees of freedom of movement of the at least one support element.

The base could have a longitudinal extent along a second longitudinal axis of the second bending piezoactuator that is in the range of 2 to 20% of the length of the second bending piezoactuator along the second longitudinal axis, optionally in the range of 5 to 15%. It can thereby be achieved that the bending piezoactuator can apply a sufficiently large force to the base for the efficient excitation of different degrees of freedom of the movement of the at least one support element.

The first bending piezoactuator could have an elongated shape along a first longitudinal axis. The second bending piezoactuator could also have an elongated shape along a second longitudinal axis. The first bending piezoactuator could extend along the first longitudinal axis and the second bending piezoactuator could extend along the second longitudinal axis along a longitudinal axis of the at least one support member to a freely movable end of the at least one support member. The device could also include a driver configured to drive the first bending piezoactuator with a first waveform and to drive the second bending piezoactuator with a second waveform. In this case, the first signal form and the second signal form could have antiphase signal contributions. It would optionally also be possible for the second signal form to have in-phase further signal contributions, which are optionally amplitude-modulated. For example, the amplitude of the in-phase signal contributions during the time period could be the scanning of the Scanning range is needed (correlated with the refresh rate), monotonically increase or decrease. A linear time dependence of the envelope would be possible.

The signal contributions could have a first frequency, the further signal contributions having a second frequency, the first frequency being in the range of 95-105% of the second frequency or being in the range of 45-55% of the second frequency.

It would be possible for the first signal form and / or the second signal form to have a DC component.

One method involves defining an etch mask by lithography on a wafer. The method also includes etching the wafer using the etch mask to obtain at least one etched structure that forms a scan module. The method further comprises fixing a mirror surface mirror to an interface element of the scan module.

The method may be used to fabricate a scanning module according to various examples described herein. Because the scan module is made from a wafer, such as a silicon wafer or silicon on insulator (SOI) wafer, such techniques may also be referred to as MEMS techniques.

Fixing the mirror to the interface element may include at least one of the following techniques: bonding; anodic bonding; Direct bonding; eutectic bonding; Thermo-compression bonding; adhesive bonding.

For example, could be used as an epoxy or polymethyl methacrylate (PMMA) adhesive.

The method could further include connecting a plurality of etched structures forming the scan module prior to fixing the mirror. Appropriate techniques may be used to join the etched structures described above in connection with fixing the mirror, i.e.: gluing; anodic bonding; Direct bonding; eutectic bonding; Thermo-compression bonding; adhesive bonding.

In general, a large number of structures can be defined per wafer, so that a multiplicity of scanning modules can be obtained per wafer. A parallel processing At wafer level, this allows the individual handling of individual scan modules to be avoided. At a certain point of the processing, it is possible to crop individual structures, for example by cutting or sawing the wafer. Then, processing can be carried out at the scan module level. In general, it would be possible for the interconnection of the multiple etched structures forming the scan module to be performed at wafer level, ie, before clipping individual scan modules. However, it would also be possible for the interconnection of the several etched structures to be carried out at the scan module level - ie after the individual scan module has been blanked out. Each of the plurality of etched structures may include a base, an interface member, and at least one support member extending between the respective base and the respective interface member. Then, the joining of the plurality of etched structures to the bases and the interface elements of the plurality of etched structures may occur.

The connection can be made directly or via spacers.

A scanning module for a resonantly operated light scanner comprises a mirror. The mirror has a mirror surface. The mirror also has a back side. The back is opposite the mirror surface. The scan module also includes at least one resilient support member extending away from the backside. The at least one elastic support element is manufactured by means of MEMS techniques.

This may mean that the at least one elastic support element is produced by wafer etching and lithography from a silicon or SOI wafer. This may mean, for example, that the at least one elastic support element is formed of monocrystalline material and thus can tolerate particularly large tensions.

The features and features set out above, which are described below, can be used not only in the corresponding combinations explicitly set out, but also in other combinations or isolated, without departing from the scope of the present invention. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1A schematically illustrates a scan module for a light scanner according to various examples, wherein the scan module in the example of FIG. 1A has two mutually parallel support elements, and a non-integrally formed mirror.

FIG. 1 B schematically illustrates a scan module for a light scanner according to various examples, wherein the scan module in the example of FIG. 1 B has two mutually parallel support elements, and an integrally formed mirror.

FIG. 1C schematically illustrates a scan module for a light scanner according to various examples, wherein the scan module in the example of FIG. 1 C has two mutually parallel support elements, and a mirror surface, which is applied to an interface element of the scanning module.

FIG. 2 schematically illustrates a scanning module for a light scanner according to various examples, wherein the scanning module has two support elements arranged parallel to one another, as well as a non-integrally formed mirror, which is tilted with respect to the longitudinal axis of the support elements.

FIG. 3 is a schematic perspective view of a scanning module according to various examples, including a base, an interface element, and two support members extending between the base and the interface element. FIG. 4 is a schematic perspective view of a scanning module according to various examples, including a base, an interface element, and two support members extending between the base and the interface element, the base having two edge portions adapted to be connected to piezoactuators. FIG. 5A is a schematic plan view of a scan module according to various examples, wherein the base is connected to two bending piezoactuators.

FIG. 5B is a schematic plan view of a scan module according to various examples, wherein the base is connected to two bending piezoactuators.

FIG. 6A is a schematic side view of bending piezoactuators according to various examples. FIG. FIG. 6B is a schematic plan view of a scan module according to various examples wherein the base is connected to two bending piezoactuators. FIG. FIG. 7 schematically illustrates a light scanner according to various examples.

FIG. 8 schematically illustrates antiphase waveforms that may be used to operate bending piezoactuators according to various examples. FIG. 9 schematically illustrates in-phase waveforms that may be used to operate bending piezoactuators according to various examples.

FIG. FIG. 10 schematically illustrates DC phase anti-phase waveforms that may be used to drive bending piezoactuators according to various examples.

FIG. FIG. 1 illustrates schematically dc-mode in-phase waveforms that may be used to drive bending piezoactuators according to various examples.

FIG. 12 schematically illustrates amplitude modulation of in-phase waveforms as a function of time according to various examples.

FIG. 13 schematically illustrates a superimposition figure for two degrees of freedom of movement of at least one support element and a scan area defined by the overlay figure according to various examples.

FIG. 14 illustrates a spectrum of the excitation of at least one support element, FIG.

14 illustrates a degeneracy between a torsional mode and a transverse mode according to various examples. FIG. FIG. 15 illustrates a spectrum of the excitation of at least one support element, FIG.

15 illustrates a degenerate degeneracy between a torsional mode and a transverse mode according to various examples.

FIG. 16 schematically illustrates a scanning module for a light scanner according to various examples, wherein the scanning module in the example of FIG. 15 has two mutually parallel support elements with respective balancing weight. FIG. 17 is a perspective view of a scan module for a light scanner according to various examples, wherein the scan module has two pairs of support members in different planes. FIG. 18 schematically illustrates a torsional mode for the scan module according to the example of FIG. 17th

FIGs. 19 and 20 schematically illustrate a transverse mode of a scanning module having a single support member according to various examples.

FIGs. 21 and 22 schematically illustrate a transverse mode of a scanning module having two parallel support members according to various examples.

FIG. FIG. 23 schematically illustrates a scanning module for a light scanner according to various examples, wherein the scanning module in the example of FIG. 23 has two mutually parallel support elements with respective piezo material.

FIG. 24 is a flowchart of an exemplary method of manufacturing a scan module.

FIG. 25 schematically illustrates the fabrication of a scan module according to various examples.

FIG. FIG. 26 is a sectional view of the scanning module of FIG. 25th

DETAILED DESCRIPTION OF EMBODIMENTS

The above-described characteristics, features, and advantages of this invention, as well as the manner in which they will be achieved, will become clearer and more clearly understood in connection with the following description of the embodiments, which will be described in detail in conjunction with the drawings.

Hereinafter, the present invention will be described with reference to preferred embodiments with reference to the drawings. In the figures, like reference characters designate the same or similar elements. The figures are schematic representations of various embodiments of the invention. In the figures Elements shown are not necessarily drawn to scale. Rather, the various elements shown in the figures are reproduced in such a way that their function and general purpose will be understood by those skilled in the art. Connections and couplings between functional units and elements illustrated in the figures may also be implemented as an indirect connection or coupling. Functional units can be implemented as hardware, software or a combination of hardware and software.

Hereinafter, various techniques for scanning light will be described. For example, the techniques described below may enable two-dimensional scanning of light. Scanning may refer to repeated emission of the light at different angles of radiation. For this purpose, the light can be deflected by a deflection unit. The scanning may indicate the repeated scanning of different points in the environment by means of the light. For example, For example, the amount of different points in the environment and / or the amount of different radiation angles may define a scan area.

In various examples, the scanning of light by the temporal superposition and optionally a local superimposition of two resonant-driven movements corresponding to different degrees of freedom at least one movable support element can take place. As a result, a superposition figure can be traversed in various examples. Sometimes the overlay figure is also referred to as a Lissajous figure. The overlay figure can describe a sequence with which different radiation angles are converted by the movement of the support element.

In various examples, it is possible to scan laser light. In this case, for example, coherent or incoherent laser light can be used. It would be possible to use polarized or unpolarized laser light. For example, it would be possible for the laser light to be pulsed. For example, short laser pulses with pulse widths in the range of femtoseconds or picoseconds or nanoseconds can be used. For example, a pulse duration can be in the range of 0.5-3 nanoseconds. The laser light may have a wavelength in the range of 700-1800 nm. For the sake of simplicity, reference will now be made primarily to laser light; however, the various examples described herein may also be used to scan light from other light sources, for example broadband light sources or RGB light sources. RGB light sources herein generally refer to light sources in the visible spectrum, wherein the color space is covered by superposition of several different colors - for example, red, green, blue or cyan, magenta, yellow, black.

In various examples, at least one support element will be used to scan light having a shape and / or material induced elasticity. Therefore, the at least one support element could also be referred to as a spring element. Then at least one degree of freedom of movement of the at least one support element can be excited, for example a torsional mode and / or a transverse mode. That There is a resonant excitation of the corresponding mode. Thereby, a mirror, which is connected to a movable end of the at least one support element, are moved. Therefore, the movable end of the at least one support element defines an interface element. This allows light to be scanned. For example, it would be possible to use more than a single support element, e.g. two or three or four support elements. These may optionally be arranged symmetrically with respect to each other.

For example, the movable end could be moved in one or two dimensions. One or more actuators can be used for this purpose. For example, it would be possible that the movable end is tilted relative to a fixing of the at least one support element; this results in a curvature of the at least one support element. This may correspond to a first degree of freedom of the movement; this can be referred to as transversal mode (or sometimes as wiggle mode). Alternatively or additionally, it would be possible for the movable end to be rotated along a longitudinal axis of the support element (torsion mode). This may correspond to a second degree of freedom of movement. By moving the movable end can be achieved that laser light is emitted at different angles. For this purpose, a deflection unit such as a mirror may be provided. This allows an environment to be scanned with the laser light. Depending on the amount of movement of the movable end, scan areas of different sizes can be implemented. In each of the various examples described herein, it is possible to excite the torsional mode alternatively or in addition to the transverse mode, i. a temporal and spatial superimposition of the torsional mode and the transverse mode would be possible. This temporal and local overlay can also be suppressed. In other examples, other degrees of freedom of motion could also be implemented.

For example, the deflection unit can be implemented as a prism or mirror. For example, the mirror could be through a wafer, such as a silicon wafer, or a Be implemented glass substrate. For example, the mirror could have a thickness in the range of 0.05 μηι - 0, 1 mm. For example, the mirror could have a thickness of 25 μηι or 50 μηι. For example, the mirror could have a thickness in the range of 25 μηι to 75 μηι. For example, the mirror could be square, rectangular or circular. For example, the mirror could have a diameter of 3 mm to 12 mm, or in particular 8 mm.

In general, such techniques can be used to scan light in a wide variety of applications. Examples include endoscopes and RGB projectors and printers. In various examples, LIDAR techniques can be used. The LIDAR techniques can be used to perform a spatially resolved distance measurement of objects in the environment. For example, the LIDAR technique may include transit time measurements of the laser light between the mirror, the object, and a detector. In general, such techniques can be used to scan light in a wide variety of applications. Examples include endoscopes and RGB projectors and printers. In various examples, LIDAR techniques can be used. The LIDAR techniques can be used to perform a spatially resolved distance measurement of objects in the environment. For example, the LIDAR technique may include transit time measurements of the laser light.

Various examples are based on the finding that it may be desirable to carry out the scanning of the laser light with a high accuracy with respect to the emission angle. For example, in the context of LIDAR techniques, spatial resolution of the distance measurement may be limited by inaccuracy of the emission angle. Typically, a higher (lower) spatial resolution is achieved the more accurate (less accurate) the radiation angle of the laser light can be determined.

The following describes techniques to provide a particularly robust laser scanner. This is achieved in various examples by providing a scan module which comprises a support element. In this case, the support element is integrally formed with a base and an interface element which is adapted to fix the mirror surface.

By integrally forming can be achieved that a particularly large power flow can be transmitted through the base to the support member. As a result, one or more degrees of freedom of movement of the support element can be excited particularly efficiently. This can in turn be achieved that the support element with a movement performs a particularly large amplitude. This allows large scan angles to be implemented. In addition, it is avoided that, for example, an adhesive or other connecting means - which would have to be used in the non-integral training - tears or yields and thus the scan module is damaged.

In order to form the various parts of the scanning module in one piece, MEMS techniques can be used. For example, the scan module could be made by etching techniques from a wafer. The wafer may e.g. 500 μηι be thick. For example, techniques of wet chemical etching or dry etching could be used, for example, reactive ion etching (RIE), e.g. dry RIE (engl., dry RIE, DRIE). The wafer may be, for example, a silicon wafer or a silicon on insulator (SOI) wafer. The insulator could be arranged about 100 μηι below a surface of the wafer. The insulator may act as an etch stop, for example. In this case, it is possible for front-side etching and / or back-side etching to be used in order to release the different parts of the scanning module. For example, it would be possible to define etch masks on the wafer by means of lithography. In this way, it may in particular be possible for the various parts of the scanning module to be integral and optionally even monocrystalline. Techniques will also be described below to provide a laser scanner capable of implementing particularly large scan angles. This is achieved in various examples in that the support element has an extension perpendicular to the mirror surface which is not smaller than 0.7 mm. Therefore, compared to conventional MEMS-based micromirrors, the support element does not extend only in the plane of the mirror surface, but also has a significant extension vertical to the mirror surface. For example, the support element could be rod-shaped along a longitudinal axis, wherein the longitudinal axis has a component perpendicular to the mirror surface. However, the support member could have local variations in cross-sectional area to implement a balance weight.

By means of such techniques it can be achieved that the mirror surface can move particularly freely. As a result, large amplitudes of the movement can be achieved, which in turn enables large scan angles. FIG. 1A illustrates aspects relating to a scan module 100. The scan module 100 includes a base 141, two support members 101, 102, and an interface member 142. The base 141, support members 101, 102, and interface member 142 are integral educated. The support members 101, 102 are formed in a plane (drawing plane of FIG. 1A). In the example of FIG. 1A, the support elements 101, 102 are straight, ie have no curvature and no kink at rest. In the various examples described herein, it is possible to use a corresponding straight, rod-shaped configuration of support members.

For example, it would be possible for the base 141, the support members 101, 102, and the interface member 142 to be obtained by MEMS processes by etching a silicon wafer (or other semiconductor substrate). In such a case, the base 141, the support elements 101, 102, as well as the interface element 142 may be formed in particular monocrystalline.

It would be possible for the distance between two adjacent support elements 101, 102 to be in the range of 2% -50% of the length 21 1 of at least one of the at least two support elements, optionally in the range of 10% -40%, further optional in the range of 12 - 20%. It is possible that the at least two support members have lengths 211 that do not deviate from each other by more than 10%, optionally not more than 2%, further optionally not more than 0.1%. As a result, a particularly large amplitude of corresponding degrees of freedom of the movement can be achieved. For example, it would be possible for the longitudinal axes 11, 112 of the support elements 101, 102 to enclose in pairs each other wrenches which are not greater than 45 °, optionally not greater than 10 °, further optionally not greater than 1 °. The support elements 101, 102 have an arrangement with rotational symmetry with respect to a central axis 220. In the example of FIG. 1A is a twofold rotational symmetry. It would also be possible for the scan module 100 to have only a single support element or to have more than two support elements.

FIG. 1A also illustrates aspects relating to a laser scanner 99. The laser scanner 99 includes the scan module 100 as well as a mirror 150. In the example of FIG. 1A is the mirror 150 which has on the front side a mirror surface 151 with high reflectivity (for example greater than 95% at a wavelength of 950 μm, optional> 99%, further optional> 99.999%, eg aluminum or gold in a thickness of 80 μm). 250 nm) for light 180, not integrally formed with the base 141, the support elements 101, 102, and the interface element 142. For example, the mirror 150 could be glued to the interface element 142. Namely, the interface member 142 may be configured to fix the mirror surface 151. For example, the interface element 142 for this purpose could have an abutment surface configured to to fix a corresponding contact surface of the mirror 150. For example, to join the mirror 150 to the interface element 142, one or more of the following techniques could be used: gluing; Soldering. Between the interface element 142 and the mirror surface 151, a rear side 152 of the mirror 150 is arranged. The interface element 142 is arranged on the rear side 152 of the mirror 150. From FIG. It can be seen that the support members extend away from the back 152 of the mirror 150 toward the base 141. This avoids space-consuming frame-like structures as in conventional MEMS approaches. The mirror 150 can therefore be connected to the support elements 101, 102 via the interface element 142. This allows for two-piece fabrication, eliminating the need for complicated integrated backside structuring as in traditional MEMS approaches. By means of such techniques, large mirror surfaces can be realized, for example not smaller than 10 mm ^A 2, optionally not smaller than 15 mm ^A 2. Thus, in connection with LIDAR techniques, which use the mirror surface 151 as a detector aperture, a high accuracy and range be achieved. In the example of FIG. 1A, the support elements 101, 102 have an extension perpendicular to the mirror surface 151; this extension could be, for example, about 2 to 8 mm, in the example of FIG. 1A. The support elements are in particular rod-shaped along corresponding longitudinal axes 11 1, 112 are formed. In FIG. 1A, the surface normal 155 of the mirror surface 151 is shown; the longitudinal axes 11 1, 12 are oriented parallel to the surface normal 155, ie they enclose an angle of 0 ° with this.

Therefore, the extension of the support members 101, 102 perpendicular to the mirror surface 151 is equal to the length 211 of the support members 101, 102. In general, it would be possible that the length 21 1 of the support members 101, 102 is not shorter than 2 mm, optionally not shorter than 4 mm, further optional not shorter than 6 mm. For example, it is possible that the length of the support members 101, 102 is not greater than 20 mm, optionally not greater than 12 mm, further optionally not greater than 7 mm. If multiple supports are used, they can all be the same length. Depending on the relative orientation of the longitudinal axes 11 1, 1 12 with respect to the mirror surface 151, it would be possible that the extension of the support elements 101, 102 is shorter perpendicular to the mirror surface 151, as their length 211 (because only the projection parallel to Surface normal 155 is taken into account). In general, it is possible that the extension of the support members 101, 102 perpendicular to the mirror surface 151 is not smaller than 0.7 mm. Such a value is larger than the typical thickness of a wafer from which the scan module 100 can be made. As a result, particularly large scanning angles for the light 180 can be implemented.

The support elements 101, 102 could, for example, have a rectangular cross-section. The support elements 101, 102 could also have a square cross-section. But it would also other cross-sectional shapes, such as circular, triangular, etc., possible. Typical side lengths of the cross section of the support elements 101, 102 may be in the range of 50 μηι to 200 μηι, optionally about 100 μηι amount. The short side of the cross section generally could not be less than 50% of the long side of the cross section; this means that the support elements 101, 102 can not be formed as flat elements. In this way it can be ensured that the material in the region of the support elements 101, 102 can absorb sufficiently large stresses without being damaged. At the same time, however, a shape-induced elasticity of the material in the region of the support elements 101, 102 can assume sufficiently large values in order to enable a movement of the interface element 142 relative to the base 141. For example, a torsional mode and / or a transversal mode of the support members 101, 102 could be used to move the interface element 142 - and thus the mirror 150 -. Thereby, the scanning of light can be implemented (in FIG. 1A, the resting state of the support members 101, 102 is shown). In the example of FIG. 1A, the scan module 102 includes support elements 101, 102 arranged in a plane (the plane of the drawing of FIG. 1A). By using two support elements 101, 102, the scan module 100 can be implemented with a particularly high degree of robustness. In particular, the voltage per support element 101, 102 can thereby be reduced. On the other hand, with a single support member, it may be possible to provide particularly good two-dimensional scanning of the light 180.

FIG. 1B illustrates aspects relating to a scan module 100. The scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142. The base 141, the support elements 101, 102, and the interface element 142 are integrally formed. The example of FIG. 1B basically corresponds to the example of FIG. 1A. However, in the example of FIG. 1 B, the mirror 150 is integrally formed with the interface element 142 or the support elements 101, 102 and the base 141. In order to achieve the largest possible mirror surface 151, in the example of FIG. 1 B, a projection is provided over a central area of the interface element 142. As a result, it can be achieved that the force flow between the scan module 100 and the mirror 150 does not have to be transmitted via an adhesive.

FIG. 1C illustrates aspects relating to a scan module 100. The scan module 100 includes a base 141, two support members 101, 102, and an interface member 142. The base 141, the support members 101, 102, and the interface member 142 are integrally formed.

The example of FIG. 1C basically corresponds to the example of FIG. 1 B. In the example of FIG. 1C, mirror 150 and interface element 142 are implemented by one and the same element. The mirror surface 151 is applied directly to the interface element 142. This allows a particularly simple structure.

FIG. 2 illustrates aspects relating to a scan module 100. The scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142. The base 141, the support elements 101, 102, and the interface element 142 are integrally formed.

The example of FIG. 2 basically corresponds to the example of FIG. 1A. In the example of FIG. 2, however, the longitudinal axes 1 1 1, 1 12 of the support members 101, 102 are not oriented perpendicular to the mirror surface 151. In FIG. 2, the angle 159 between the surface normal 155 of the mirror surface 151 and the longitudinal axes 11, 12 is shown. The angle 159 is in the example of FIG. 2 45 °, but could generally be in the range of -60 ° to + 60 °, or optionally in the optional range of -45 ° ± 15 ° or in the range of + 45 ° ± 15 °, i. be substantially 45 °

In particular, in FIG. 2 shows a scenario in which a beam path of the light 180 runs parallel to the longitudinal axes 11 1-112 of the support elements 101, 102 and another beam path of the light 180 - after or before deflection through the mirror surface 151- perpendicular to the longitudinal axes 11 -112 runs. In general, the optical path of the light 180 may be parallel to the central axis 220 Such tilting of the mirror surface 151 with respect to the longitudinal axes 1111, 112 may be particularly advantageous if the torsional mode of the support elements 101, 102 is used to move the mirror 150. Then, periscope-like scanning of the light 180 may be implemented.

The periscope-like scanning by means of the torsional mode has the advantage that - if the mirror 150 is also used as a detector aperture - the size of the detector aperture has no dependence on the scanning angle; namely, the angle between incident light and mirror 150 is not dependent on the scanning angle. This is different from reference implementations in which, by tilting the mirror, the size of the detector aperture-and thus the sensitivity of the measurement-varies as a function of the scan angle.

FIG. 3 illustrates aspects relating to a scan module 100. The scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142. The base 141, the support elements 101, 102, and the interface element 142 are integrally formed. FIG. 3 is a perspective view of the scan module 100. In FIG. In particular, FIG. 3 illustrates how a direction 1901 of the front etch and a direction 1902 of the backside etch are oriented. For example, scan module 100 could be fabricated by suitably two-step etching of an SOI wafer along directions 1901, 1902. The interfaces between insulator and silicon could define the support elements 101, 102.

For example, the wafer surface could be oriented perpendicular to the directions 1901, 1902. From a comparison of FIGs. 1A, 1 B, 1 C, 2 with FIG. 3 it follows that the mirror surface 151 is not oriented perpendicular to the wafer surface. As a result, particularly large lengths 211 of the at least one support element 101, 102 can be made possible. This in turn allows for large scan angles.

In the example of FIG. 3, the thickness 1998 of the base 141 and the interface member 142 is different from the thickness 1999 of the support members 101, 102. In other examples, it would be possible for the base 141, the interface member 142, and the support members 101, 102 to have the same thickness. This is related to the thicknesses 1998, 1999 in the etching direction of the MEMS structuring, ie perpendicular to a wafer normal with respect to the Front-side structuring and backside structuring according to directions 1901, 1902. The wafer normal typically correlates with a particular crystal direction.

FIG. 4 illustrates aspects relating to a scan module 100. The scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142. The base 141, the support elements 101, 102, and the interface element 142 are integrally formed. FIG. 4 is a perspective view of the scanning module 100.

The example of FIG. 4 basically corresponds to the example of FIG. 3. In the example of FIG. 4, the base 141 comprises a central region 145 and two edge regions 146 arranged on different sides of the central region 145. The support elements 101, 102 are connected to the central region 145. The central region 145, as well as the edge regions 146 are all formed in one piece. The edge regions 146 in the example of FIG. For example, the thickness of the edge regions 146 could not be greater than 30% of the thickness of the central region 145. The reduced thickness of the edge regions 146 can be made to have greater shape-induced elasticity than the central region 145. In general, other measures could be taken to make the edge regions 146 have greater shape-induced elasticity than the central region 145. For example, depressions or trenches could be provided which provide the elasticity.

The edge regions 146 can be used to connect to piezoactuators. The central region 145 establishes the connection with the support elements 101, 102.

FIG. 5A illustrates aspects with respect to a laser scanner 99. The laser scanner 99 includes the scan module 100, which could be configured, for example, according to the various other examples described herein (however, FIG. 5A exemplifies a scan module 100 having only a single support member 101). ,

FIG. 5A illustrates particular aspects with respect to piezoactuators 310, 320. In various examples, bending piezoactuators 310, 320 may be used to excite the support member 101. For example, generally a first and a second bending piezoactuator may be used. It would be possible for the first bending piezoactuator and / or the second bending piezoactuator to be plate-shaped. In general, a thickness of the Biegepiezoaktuatoren eg in the range of 200 μηι - 1 mm are, optionally in the range of 300 μηι - 700 μηι. For example, it would be possible for the first bending piezoactuator and / or the second bending piezoactuator to have a layer structure comprising an alternating arrangement of a plurality of piezoelectric materials. These can have a different strength piezoelectric effect. As a result, a bending can be effected, similar to a bimetallic strip with temperature changes. For example, it is possible for the first bending piezoactuator and / or the second bending piezoactuator to be fixed at a fixing point: an end opposite the fixing point can then be moved on account of a bending or curvature of the first bending piezoactuator and / or the second bending piezoactuator. The use of Biegepiezoaktuatoren a particularly efficient and strong excitation can be achieved. Namely, the bending piezoactuators can move the base 141 and, in particular, tilt - for exciting a torsional mode of the at least one support element. In addition, it may be possible to achieve high integration of the device for excitation. This can mean that the required installation space can be dimensioned particularly small.

In particular, in the example of FIG. 5A, the piezoactuators 310, 320 are designed as bending piezoactuators. This means that the application of a voltage to electrical contacts of the bending piezoactuators 310, 320 causes a bending or bending of the bending piezoactuators 310, 320 along their longitudinal axes 319, 329. For this purpose, the bending piezoactuators 310, 320 have a layer structure (not illustrated in FIG. 5A and oriented perpendicular to the plane of the drawing). In this way, one end 315, 325 of the bending piezoactuators 310, 320 are deflected perpendicular to the respective longitudinal axis 319, 329 relative to a fixing point 311, 321 (the deflection is oriented perpendicular to the plane of the drawing in the example of FIG. The deflection 399 of the bending piezoactuators 310, 320 due to the bending is shown in FIG. 6A.

FIG. 6A is a side view of the bending piezoactuators 310, 320. FIG. 6A shows the bending piezoactuators 310, 320 in a rest position, for example without a driver signal or tension / curvature. Referring again to FIG. 5A: For example, the fixation location in 31 1, 321 could establish a rigid connection between the bending piezoactuators 310, 320 and a housing of the laser scanner 99 (not shown in FIG. 5A). The base 141 could have a longitudinal extent of the longitudinal axes 319, 329 that is in the range of 2 to 20% of the length of the bending piezoactuators 310, 320 along the longitudinal axes 319, 329, optionally in the range of 5 to 15%. As a result, sufficient excitation can be achieved; the base 141 dampens the movement of the bending piezoactuators 310, 320 only comparatively weakly.

In the example of FIG. 5A, the bending piezoactuators 310, 320 are arranged substantially parallel to each other. It would also tilting of the longitudinal axes 319, 329 to each other possible, especially as long as they are in a plane. From the example of FIG. 5A, it can be seen that the connection of the bending piezoactuators 310, 320 with the support element 101 is implemented via the edge regions 146 of the base 141. Because these marginal regions 146 have elasticity, the flexure 399 can be received and results in deflection of the base 141. This allows one or more degrees of freedom of movement of the interface element 101 coupled via the base 141 to be excited. This results in a particularly efficient and space-saving excitation.

In the example of FIG. 5A, the bending piezoactuators 310, 320 extend away from the interface element 142. However, it is also possible that the bending piezoactuators 310, 320 extend along at least 50% of their length toward the interface element 142. As a result, a particularly compact arrangement can be achieved. This is in FIG. 5B.

FIG. 5B illustrates aspects related to a laser scanner 99. The laser scanner 99 includes the scan module 100, which could be configured according to the various other examples described herein (however, a scan module 100 having only a single support member 101 is shown in FIG. 5B).

The example of FIG. 5B basically corresponds to the example of FIG. 5A. In this case, however, the bending piezoactuators 310, 320 extend toward the interface element 142 or toward a freely movable end of the at least one support element 101. In this way, a particularly compact construction of the light scanner 99 can be achieved. From a comparison of FIGs. 5A, 5B, 6A with FIG. 4, that upon excitation via the edge regions 146, a coupled excitation of the plurality of support elements 101, 102 takes place. For example, it can be achieved that a Biegepiezoaktuator stimulates all support members 101, 102 together via a guided through the base 141 power flow. Accordingly, this could be achieved by applying the force flow to a magnetic material connected to all the support elements 101, 102 by a common magnetic field of a magnetic field coil. Such coupled excitation techniques have the advantage of enabling energy-efficient and space-efficient excitation. In addition, the coupling avoids having to operate different actuators phase coherently, which simplifies the implementation. Due to the coupled excitation, in particular a coupled torsional mode and / or a coupled transverse mode can be excited. The actuator can be set up for direct force action to excite the degree of freedom of the movement, ie it can be avoided to use a parametric excitation - as in the case of reference implementations with electrostatic interdigital finger structures. While in the examples of FIGS. 5A, 5B and 6A, the longitudinal axes 319, 329 are aligned parallel to the longitudinal axis of the support member 101, it would also be possible in other examples that the longitudinal axes 319, 329 of the Biegepiezoaktuatoren are arranged perpendicular to the longitudinal axis of the support member 101. This is in FIG. 6B. In general, the longitudinal axes 319, 329 could enclose an angle of 90 ° ± 20 ° with the longitudinal axis of the at least one support member, optionally of 90 ° ± 5 °, more optionally of 90 ° ± 1 °.

FIG. 7 illustrates aspects relating to a laser scanner 99. The laser scanner 99 includes a control unit 4001 that could be implemented, for example, as a microprocessor or application specific integrated circuit (ASIC). The controller 4001 could also be implemented as a Field Programmable Array (FPGA). The control unit 4001 is configured to output control signals to a driver 4002. For example, the control signals could be output in digital or analog form. The driver 4002 is in turn configured to generate one or more voltage signals, and these to corresponding electrical contacts of the piezoactuators 310, 320 issue. Typical amplitudes of the voltage signals are in the range of 50 V to 250 V.

The piezoactuators 310, 320 are in turn coupled to the scan module 100, such as the above reference to FIGS. 5 and 6 described. As a result, one or more degrees of freedom of the movement of the scanning module 100, in particular of one or more supporting elements 101, 102 of the scanning module 100, can be excited. As a result, the mirror surface 151 is deflected. As a result, the surrounding area of the laser scanner 99 can be scanned with light 180.

FIG. 8 illustrates aspects related to waveforms 800 that may be used to drive the piezoactuators 310, 320 according to various examples described herein. For example, the waveforms 800 could be output from the driver 4002. FIG. 8 particularly illustrates the waveform of the amplitude of the waveforms 800 as a function of time.

In the example of FIG. 8, a signal contribution 81 1 (solid line) is shown which is used to drive the bending piezoactuators 310. In addition, in the example of FIG. 8 illustrates a signal contribution 821 (dashed line) that is used to drive the bending piezoactuators 320. From the example of FIG. 8, it can be seen that the signal contributions 81 1, 821 are configured in antiphase. This means in the example of FIG. 8 that the signal contributions 811, 821 have the same frequency, as well as a phase shift of 180 °. Thereby, it can be achieved that the bending piezoactuator 310 bends upward (curving downward) while the bending piezoactuator 320 bends down (moves upward). This in turn can be achieved that the base 141 tilted alternately to the left and to the right (with respect to a central axis 220 of the one or more support elements 101, 102). Therefore, with such a configuration of the waveforms 800, a particularly efficient excitation of the torsional mode of the support member or the support members 101, 102 can be achieved.

FIG. 9 illustrates aspects related to waveforms 800 that may be used to drive the bending piezoactuators 310, 320 according to various examples described herein. FIG. 9 specifically illustrates the waveform of the amplitude of the waveforms 800 as a function of time. In the example of FIG. 9, a signal contribution 812 (solid line), which is used to drive the bending piezoactuators 310, is shown. In addition, in the example of FIG. 9 illustrates a signal contribution 822 (dashed line) that is used to drive the bending piezoactuators 320. From the example of FIG. 9, it can be seen that the signal contributions 812, 822 are configured in phase. This means the example of FIG. 9 that the signal contributions 812, 822 have the same frequency, and a phase offset of 0 °. In some examples, it would be possible for the in-phase signal contributions 812, 822 to have amplitude modulation.

By the in-phase signal contributions 812, 822 it can be achieved that the bending piezoactuator 310 curves upwards (curves downward or downward), while the bending piezoactuator 320 bends upward (moves downward or moves). , This in turn can be achieved that the base 141 is alternately moved up and down (with respect to the central axis 220). Therefore, with such a configuration of the waveforms 800, a particularly efficient excitation of transverse modes of the support element or the support elements 101, 102 can take place. In some examples, it would be possible for the signal contributions 811, 821 to be temporally superimposed with the signal contributions in 812, 822. This may be desirable in particular if only a single support element is used. Then, a temporal and spatial superimposition of a torsional mode and a transverse mode of the at least one support element can be obtained. It can thereby be achieved that a two-dimensional scan area is scanned, with the light being deflected at the individual mirror surface. This can achieve a particularly space-saving integration of the laser scanner 99.

In other examples, however, it would also be possible for either the antiphase signal contributions 81 1, 821 or else the in-phase signal contributions 812, 822 to be applied. This may be desirable in particular if more than one single support element is used. Then either the torsional mode or the transverse mode of the at least one support element can be excited. As a result, by deflecting the mirror surface, a one-dimensional scan area can be scanned. In order to nevertheless scan a two-dimensional scan area, it would be possible, for example, for two laser scanners to deflect the light sequentially; The two laser scanners can be operated synchronized. In the following, however, reference will be made primarily to scenarios in which a temporal and spatial superposition of different degrees of freedom of movement of the at least one support element is used to scan a two-dimensional scan area.

A typical frequency of the signal contributions 81 1, 812, 821, 822 is, for example, in the range of 50 Hz to 1.5 kHz, optionally in the range of 200 Hz to 1 kHz, further optionally in the range of 500 Hz to 700 Hz adequate scanning frequencies are achieved.

In the examples of FIGS. 8 and 9 illustrate scenarios in which the antiphase signal contributions 81 1, 821 for exciting the bending piezoactuators 310, 320 have approximately the same frequency as the in-phase signal contributions 812, 822. In general, it would be possible for the antiphase signal contributions 811, 821 a first frequency in the range 95-105% of a second frequency of the in-phase signal contributions 812, 822 have. By means of such an implementation of the frequencies of the signal forms 800, it can be achieved that a particularly efficient superposition figure of the various degrees of freedom of the movement of the at least one support element 101, 102 can be achieved. In particular, it can be achieved that a high refresh rate can be achieved without certain areas of the scan area being scanned multiple times by nodes in the overlay figure. In particular, such implementations of the frequencies of the waveforms 800 may exploit a degeneracy of the various excited degrees of freedom of movement of the at least one support element 101, 102 in the frequency domain. For example, it may be possible to degenerate the frequency of the torsional mode of the at least one support element 101, 102 and the frequency of the transverse mode of the at least one support element 101, 102 by suitably configuring one or more of the following parameters: length 21 1 of the at least one Support member 101, 102; Moment of inertia of the at least one support member 101, 102 and / or a balance weight, which is attached to the at least one support member 101, 102; and moment of inertia of the interface element 142 and / or the mirror 150.

However, in other examples, it would also be possible for the antiphase signal contributions 811, 821 to have a different first frequency than the second frequency of the in-phase signal contributions 812, 822. For example, the first frequency of the antiphase signal contributions 81 1, 821 could be in the range of 45 °. 55% of the second frequency of in-phase Signal contributions 812, 822 are, ie amount to about half of the second frequency. In other examples, the first frequency could also be about twice the second frequency and take a completely different value. By thus canceling the degeneracy between the various degrees of freedom of the movement of the at least one support element 101, 102 excited by the in-phase signal contributions 811, 821 and in-phase signal contributions 812, 822, non-linear interactions between the corresponding degrees of freedom of the movement can be avoided. For example, the formation of a parametric oscillator by the transverse modes and / or the torsional mode can be avoided. As a result, a particularly targeted excitation of the at least one support element 101, 102 can be achieved.

By superposing the in-phase signal contributions 81 1, 821 with the antiphase signal contributions 812, 822, it can be achieved that the signal forms 800 on the bending piezoactuator 810 have a specific phase shift relative to the signal forms 800 on the bending piezoactuator 820. This phase shift can be varied, for example as a function of the relative amplitude of the in-phase signal contributions 81 1, 821 and opposite-phase signal contributions 812, 822 to one another. In other words, the actual waveforms 800 may be decomposed into the in-phase signal contributions 81 1, 821 and the anti-phase signal contributions 812, 822. In some examples, a driver used to generate the waveforms 800 may already have the superposition of the in-phase signal contributions 81 1, 821 with the generate antiphase signal contributions 812, 822.

FIG. FIG. 10 illustrates aspects related to waveforms 800 that may be used to drive the bending piezoactuators 310, 320 in accordance with various examples described herein. FIG. 10 illustrates in particular the course of the amplitude of the waveforms 800 as a function of time.

The example of FIG. 10 basically corresponds to the example of FIG. 8. However, in the example of FIG. 10, the signal contributions 811, 821 each have a DC component 801. In some examples, it would also be possible for only one of the signal contributions 81 1, 821 to have a DC component 801 (horizontal dashed line in FIG. 10). In some examples, it would also be possible for the two signal contributions 811, 821 to have differently dimensioned DC components 801, for example in size and / or sign.

By providing the DC component 801, it can be achieved that a bias of the at least one support element 101, 102 - ie a DC deflection of the at least one support element 101, 102 - is reached. As a result, for example, an offset of the at least one support element and / or specifications for the field of view of the corresponding scanner can be compensated or taken into account. FIG. 11 illustrates aspects related to waveforms 800 that may be used to drive the bending piezoactuators 310, 320 according to various examples described herein. FIG. 11 illustrates, in particular, the course of the amplitude of the waveforms 200 as a function of time. The example of FIG. 11 basically corresponds to the example of FIG. 9. However, in the example of FIG. 11, the signal contributions 812, 822 each have a DC component 801. In general, it is possible that only individual ones of the signal contributions 812, 822 have a DC component 801. Different signal contributions can also have different DC components.

FIG. 12 illustrates aspects related to amplitude modulation of the signal contributions 812, 822. In particular, FIG. 12 shows the amplitude of the signal contributions 812, 822 as a function of time. In the example of FIG. 12, the time duration 860 needed to sample an overlay figure is shown. This means that the duration 860 may correspond to a refresh rate of the laser scanner 99.

From FIG. 12, it can be seen that the amplitude of the in-phase signal contributions 812, 822 is monotonically and constantly increased as a function of time during the duration 860. The amplitude could also be increased gradually. The amplitude could also be reduced monotonically.

FIG. 12 also illustrates aspects related to amplitude modulation of the signal contributions 81 1, 821. From FIG. 12, it can be seen that the amplitude of the antiphase signal contributions 81 1, 821 does not vary.

By such techniques, a particularly efficient scanning of the laser light can be implemented. In particular, it may be possible to obtain an overlay figure that has no or at least a few nodes. This allows a large scanning area to be scanned at a high frame rate. It has been observed that particularly good results can be achieved when continuous amplitude modulation without jumps is chosen. Particularly good results can be obtained in particular for a sine-shaped or cosine-shaped amplitude modulation. Then nonlinear effects are suppressed very well. It can be obtained a particularly well-defined overlay figure.

FIG. 13 illustrates aspects relating to an overlay figure 900. FIG. 13 particularly illustrates aspects related to a scan area 915 (dashed line in FIG. 13) defined by the overlay figure 900. FIG. 13 shows the scan angle 901, which can be achieved by a first degree of freedom of the movement 501 of the at least one support element 101, 102. FIG. 13 also shows the scan angle 902 that may be achieved by a second degree of freedom of movement 502 of the at least one support member 101, 102 (the scan angles are also indicated in FIG. 1, for example).

For example, it would be possible for the first degree of freedom of the movement 501 to correspond to a transverse mode of the at least one support element 101, 102. Then it would be possible for the transverse mode 501 to be excited by the in-phase signal contributions 812, 822. Accordingly, it would be possible for the degree of freedom of movement 902 to correspond to a torsional mode of the at least one support element 101, 102. Then it would be possible for the torsional mode 502 to be excited by the antiphase signal contributions 811, 821.

The overlay figure 900 according to the example of FIG. 13 is obtained when the transverse mode 501 and the torsional mode 902 have the same frequency. In addition, the overlay figure 900 according to the example of FIG. 13 is obtained when the amplitude of the transverse mode 501 is increased by the amplitude modulation of the in-phase signal contributions 812, 822 (see FIG. 12) during the time period 860. That is, it is achieved that the overlay figure 900 is obtained as an "opening eye", that is, larger scan angles 901 are obtained with increasing amplitude of the transverse mode 501 (represented by the vertical dotted arrows in FIG Dotted arrows in FIG 13), with which the environment of the laser scanner can be scanned 99. By repeated emission of light pulses then different pixels can be obtained 951. Overlay figures with many nodes are avoided, whereby a particularly large refresh rate can be achieved avoided that certain areas between the nodes are not scanned. FIG. FIG. 14 illustrates aspects relating to resonant curves 1301, 1302 of the degrees of freedom of the movement 501, 502, which may include, for example, the overlay figure 900 according to the example of FIG. 13 can implement. FIG. 14 illustrates the amplitude of the excitation of the respective degree of freedom of the movement 501, 502. A resonance spectrum according to the example of FIG. 14 may be desirable in particular if a temporal and spatial superimposition of the different degrees of freedom of the movement 501, 502 of the at least one support element 101, 102 for the two-dimensional scanning is desired. The resonance curve 1301 of the transverse mode 501 has a maximum 131 1 (solid line) , In FIG. 14, the resonance curve 1302 of the torsional mode 502 is also shown (dashed line). The resonance curve 1302 has a maximum 1312.

The maximum 1312 of the torsional mode 502 is at a lower frequency than the maximum 131 1 of the transverse mode, e.g. the transversal mode 501 could be lowest order. The torsional mode 502 can thus form the fundamental mode of the system. This can be achieved that the scan module is particularly robust against external disturbances such as vibrations, etc. This is the case since such external excitations typically excite transverse mode 501 most efficiently, but do not excite torsional mode 502 particularly efficiently.

For example, the resonance curves 1301, 1302 could be Lorentz-shaped. This would be the case if the corresponding degrees of freedom of movement 501, 502 can be described by a harmonic oscillator.

The maxima 1311, 1312 are shifted from each other in frequency. For example, the frequency spacing between the maxima 131 1, 1312 could be in the range of 5 Hz to 20 Hz. In FIG. 14, the half widths 1321, 1322 of the resonance curves 1301, 1302 are also shown. Typically, the half-width is defined by the attenuation of the corresponding degree of freedom of movement 501, 502. In the example of FIG. 14, the half widths 1321, 1322 are equal; however, in general, the half widths 1321, 1322 could be different from each other. In some examples, different techniques may be used to increase the half widths 1321, 1322. For example, a corresponding adhesive could be provided, whose particular locations, for example between the bending piezoactuators 310, 320 and the base 141, is arranged. In the example of FIG. 14, the resonance curves 1301, 1302 have an overlap region 1330 (shown in dark). This means that the transverse mode 501 and the torsional mode 502 are degenerate. In the overlap region 1330, both the resonance curve 1301 has significant amplitudes and the resonance curve 1302. For example, it would be possible for the amplitudes of the resonance curves 1301, 1302 in the overlap region not to be less than 10% of the corresponding amplitudes at the respective maximum 131 1 , 1312, optionally not <5% each, optionally not <1% each further. By the overlap region 1330 can be achieved that the two degrees of freedom of movement 501, 502 can be coupled coupled, namely each semi-resonant at a frequency 1399th The frequency 1399 is between the two maxima 131 1, 1312 Thus, the temporal and spatial Overlay can be achieved. On the other hand, nonlinear effects can be suppressed or avoided by coupling between the two degrees of freedom of movement 501, 502.

FIG. 15 illustrates aspects relating to resonant curves 1301, 1302 of the degrees of freedom of movement 501, 502. In the example of FIG. 15, the two degrees of freedom of movement 501, 502 have no overlapping area. There is a reversal of degeneracy. Therefore, when using the excitation frequency 1399, only the torsional mode 502 is excited. This may be desirable if the scan engine is to implement only one-dimensional scanning. This may be desirable especially when using more than one support element.

For example, For example, the degree of freedom of movement 502 may correspond to a torsional mode. The torsional mode 502 may form a fundamental mode of the kinematic system, i. there can be no further degrees of freedom of movement with smaller natural frequencies.

By semi-resonant excitation off the maximum 1312, non-linear effects can be avoided.

For adjusting or displacing the resonance curves 1301, 1302, one or more balancing weights may be provided, which may be formed integrally with the at least one support element 101, 102, for example. A corresponding example is shown in FIG. 16 shown. The example of FIG. 16 basically corresponds to the example of FIG. 1. However, in the example of FIG. 16 balancing weights 1371, 1372 provided on the support elements 101, 102. The balancing weights 1371, 1372 are in particular integrally formed with the support elements 101, 102. By the balance weights 1371, 1372, the frequency of the torsional mode 502 can be changed. The balancing weights 1371, 1372 correspond to a local enlargement of the cross section of the rod-shaped supporting elements 101, 102.

FIG. 17 illustrates aspects relating to a laser scanner 99. In the example of FIG. 17, there is shown a scanning module 100 having a first pair of support members 101-1, 102-1 and a second pair of support members 102-1, 102-2. The first pair of support members 101-1, 102-1 is arranged in a plane; the second pair of support members 101-2, 102-2 is also arranged in a plane. These planes are parallel to each other and offset from one another. Each pair of support elements is associated with a corresponding base 141-1, 141-2, and a corresponding interface element 142-1, 142-2. Both interface elements 142-1, 142-2 make a connection with a mirror 150 here. It can thus be achieved that a particularly stable scanning module 100 can be provided, which has a large number of supporting elements. In particular, the scan module 100 may comprise support elements arranged in different planes. This can allow a particularly large robustness.

From FIG. 17, it can also be seen that the base 141-1 is not integrally formed with the base 141-2. In addition, the interface element 142-1 is not formed integrally with the interface element 142-2. Also, the support members 101-1, 102-1 are not formed integrally with the support members 102-1, 102-2. In particular, it would be possible for the various aforementioned parts to be manufactured from different regions of a wafer and then connected to one another, for example by gluing or anodic bonding. Other examples of joining techniques include: fusion bonding; Fusion or direct bonding; Eutectic bonding; Thermocompression bonding; and adhesive bonding. Corresponding connection surfaces 160 are shown in FIG. 17 marked. By means of such techniques it can be achieved that the scan module 100 can be manufactured particularly easily. In particular, it is not necessary for the complete scan module 100 to be manufactured in one piece or integrated from a wafer. Rather, the scan module 100 can be produced in a two-stage manufacturing process. At the same time, however, this can not significantly reduce the robustness: due to the large area connecting surfaces 160, a particularly stable connection between the base 141-1 and the base 141-2 and the interface element 142-1 and the interface element 142-2, respectively.

In the example of FIG. 17, the base 141-1 is directly connected to the base 141-2; In addition, the interface element 142-1 is directly connected to the interface element 142-2. This is made possible by the thickness variation with respect to the support members 101-1, 101-2, 102-1, 102-2 (see Fig. 3). In other examples, base 141-1, base 141-2, interface element 142-1, interface element 142-2, and support elements 101-1, 101-2, 102-1, 102-2 could all have the same thickness; then the connection could be via spacers (not shown in FIG. 17).

In the scenario of FIG. 17, it is possible that the base 141-1, the support elements 101-1, 102-

1, as well as the interface element 142-1 by mirroring on a plane of symmetry (softer also the connecting surfaces 160 are) on the base 141-2, the support elements 102-1, 102-2, as well as the interface element 142-2. As a result, a highly symmetrical structure can be achieved. In particular, a rotationally symmetrical structure can be achieved. The rotational symmetry can have a count of n = 4; i.e. equal to the number of supporting elements 101-1, 101-2, 102-1, 102- used

2. Such a symmetrical structure with respect to the central axis 220 may in particular have advantages with respect to the excitation of the torsional mode 502. Nonlinearities can be avoided.

FIG. 18 illustrates aspects related to the torsional mode 502. FIG. 18 schematically illustrates the deflection of the torsional mode 502 for the scan module 100 according to the example of FIG. 17 (in FIG.18, the deflected state is shown by the solid lines and the rest state is shown by the dashed lines).

In FIG. 18, the axis of rotation 220 of the torsional mode 502 is also shown. The axis of rotation 220 lies in the plane of symmetry 221, which forms the base 141-1 on the base 141-2 or the support elements 101-1, 101-2 on the support elements 102-1, 102-2.

Thus, the plurality of support members 101-1, 101-2, 102-1, 102-2 twist (I) both into each other along the central axis 220; and (II) each individually along their longitudinal axes. Therefore, the torsional mode 502 may also be referred to as a coupled torsional mode 502 of the support elements 101-1, 101-2, 102-1, 102-2. This is promoted by the geometric arrangement of the support elements 101-1, 101-2, 102-1, 102-2 to each other, namely in particular by the parallel arrangement of the support elements 101-1, 101-2, 102-1, 102-2 together - so with a particularly small distance between the support elements 101-1, 101-2, 102-1, 102-2 compared to the length thereof. This coupled torsional mode 502 may be referred to as parallel kinematics of the support elements 101-1, 101-2, 102-1, 102-2. In the example of FIG. 18, the support elements 101-1, 102-1, 101-2, 102-2 are arranged rotationally symmetrical with respect to a central axis 220. In particular, there is a fourfold rotational symmetry. The presence of a rotational symmetry means, for example, that the system of the support elements 101-1, 102-1, 101-2, 102-2 can be converted into themselves by rotation. The magnitude of the rotational symmetry designates how often per 360 ° rotation angle the system of the support elements 101-1, 102-1, 101-2, 102-2 can be converted into itself. In general, the rotational symmetry could be n-fold, where n denotes the number of supporting elements used.

Due to the rotationally symmetrical arrangement with high counting, the following effect can be achieved: Nonlinearities in the excitation of the torsional mode 502 can be reduced or suppressed. This can be made plausible by the following example: for example, the support elements 101-1, 102-1, 101-2, 102-2 could be arranged such that the longitudinal axes and the central axis 220 all lie in one plane. Then the rotational symmetry would be twofold (and not fourfold, as in the example of FIG. In such a case, the orthogonal transverse modes 501 (different directions perpendicular to the central axis 220) have different frequencies - due to different moments of inertia. Thus, for example, the direction of the low-frequency transverse mode rotates together with the rotation upon excitation of the torsional mode 502. As a result, a parametric oscillator is formed because the natural frequencies vary as a function of the angle of rotation or thus as a function of time. The transfer of energy between the various states of the parametric oscillator causes nonlinearities. By using high-symmetry rotational symmetry, the formation of the parametric oscillator can be prevented. Preferably, the support elements can be arranged so that no dependence of the natural frequencies of the torsion angle occur.

By avoiding non-linearities in the excitation of the torsional mode of the support elements 101-1, 102-1, 101-2, 102-2, it can be achieved that particularly large scan angles of the light through the torsional mode 502 can be achieved.

The twisting of the support elements 101-1, 102-1, 101-2, 102-2 into one another along the central axis 220, as well as the twisting of the support elements 101-1, 102-1, 101-2, 102-2 along their longitudinal axes increases for greater distances to the base 141 and also increases for larger torsion angles. For example, if the torsional angle of the torsional mode 502 becomes greater than the angular spacing of the support elements 101-1, 102-1, 101-2, 102-2 (in the example of Figure 18, 90 ° because of the fourfold rotational symmetry), a complete twist with longitudinal Overlap of the support elements 101-1, 102-1, 101-2, 102-2 into each other before. In general, therefore, the torsion angle of the torsional mode 502 can be greater than 360 n, where n describes the accuracy of the rotational symmetry. As a result, the twist of the support elements 101-1, 102-1, 101-2, 102-2 is conveyed into each other. This parallel kinematics enables large scanning angles, with low nonlinear effects and low space requirements.

FIG. 19 illustrates aspects relating to a scan module 100. In the example of FIG. 19, the scanning module 101 comprises a single support element 101 with an optional balance weight 1371. Therefore, upon excitation of the transverse mode 501, a tilting of the mirror surface 151 occurs. This is shown in FIG. 20 shown. In FIG. In particular, the lowest order transverse mode 501 is shown. In other examples, it would also be possible to use a transversal mode of higher order to scan light 180, in which case the deflection of support element 101 at certain positions along length 21 1 of support element 101 would be zero (so-called node or belly of deflection) ).

FIG. 21 illustrates aspects relating to a scan module 100. In the example of FIG. 21, the scanning module 101 includes a pair of support members 101, 102. These are arranged in a plane (the plane of the drawing in FIG. 21). Upon excitation of the transverse mode 502 with deflection in this plane, there is no tilting of the mirror surface 151. Therefore, the deflection of the light 180 is not influenced by the excitation of the transverse mode 502. This is in FIG. 22 is shown. As a result, a system-inherent stabilization against vibrations can be achieved. A particularly strong stabilization can be achieved, for example, if more than two support elements are used, which are not all in the same plane. This would be, for example, for the scan module 100 according to the example of FIG. 17 the case.

FIG. FIG. 23 illustrates aspects relating to a scan module 100. In the example of FIG. 23, the piezoactuators 310, 320 are applied directly to the support elements 101, 102, for example by vapor deposition processes. It can thus be achieved that the excitation of the degrees of freedom of the movement 501, 502 does not take place via the base 141; but rather directly in the area of the support elements 101, 102. This can allow a particularly efficient and space-saving excitation.

Alternatively or in addition to the excitation, the corresponding piezoelectric layer could also be used to detect the curvature of the support elements. As a result, the deflection angle 901, 902 can be determined particularly accurately. For example, multiple piezoelectric layers could be mounted on different sides of the support members 101, 102 to detect different directions of curvature. FIG. 24 is a flowchart of an exemplary method of manufacturing a scan module. For example, with the method of FIG. 24, scan module 100 may be made according to various examples described herein.

First, an etching mask is defined by means of lithography in step 5001 on a wafer, for example a Si wafer or an SOI wafer. The wafer may have a thickness of, for example, 500 μm.

Then, in step 5002, the wafer is etched. In this case, it is possible, for example, to etch from the front side and / or from the backside of the wafer. In this way, the scan module or parts of the scan module (etched structure) is obtained as a one-piece and freestanding structure.

In step 5002, etching could be from one or more sides of the wafer. For example, For example, a front side etch could be done, e.g. with an SOI etch stop. Then a backside etch could be done, e.g. to define a depression in the edge area of the base. As a result, the edge region can obtain a large shape-induced elasticity.

Optionally, subsequently, a plurality of etched structures could be bonded together by gluing or anodic bonding (see Figures 17 and 25). As a result, if only parts are produced in step 5002, the scan module can be completed. For example, For example, prior to joining etched structures to obtain the scan module, the etched structures to be joined could be cropped: for this, the wafer could be cut or sawn.

In step 5003, the mirror surface is attached to the scan module 100. The mirror surface could then include a wedge with the unetched wafer surface, eg in the range of -60 ° to + 60 °, optionally of 45 ° or 0 °. For example, the mirror surface could include an angle with the unetched wafer surface of 45 ° ± 15 °. In a simple case, attaching the mirror surface could include trimming aluminum or gold on a corresponding surface of scan module 100 and interface element 142, respectively. In other examples, for example, a mirror 150 could be adhered to the interface element 142 by means of adhesive. The mirror 150 could also be made of a semiconductor material or of glass. Anodic bonding would also be possible to secure the mirror 150. Other examples of joining techniques include: fusion bonding; Fusion or direct bonding; eutectic bonding; Thermocompression bonding; and adhesive bonding. In general, therefore, the mirror 150 can be fixed on the scan module 100.

In step 5004, basically an optional step, the actuator is attached to the scan module 100. In a simple example, this could include depositing piezoelectric material on the support members 101, 102 (see FIG. 23). In other examples, however, it would also be possible for bending piezoactuators to be attached to the base 141, for example.

FIG. FIG. 25 illustrates aspects related to fabricating a scan module 100. In particular, FIG. 25 Aspects Related to Joining Multiple Etched Structures 411, 412.

In FIG. 25 shows that two identical etched structures 411, 412 are obtained by wafer processing. Each of the etched structures respectively forms a corresponding base 141-1, 141-2, a corresponding interface element 142-1, 142-2, and support elements 101-1, 102-1 and 101-2, 102-2.

In the example of FIG. 25, the base 141-1, the interface element 142-1, and the support elements 101-1, 102-1 all have the same thickness 1998, 1999 (in contrast to the scenario of FIG. 3). In the example of FIG. 25, the base 141-2, the interface element 142-2, and the support elements 101 -2, 102-2 all have the same thickness 1998, 1999 (in contrast to the scenario of FIG. 3).

The two etched structures 41 1, 412 are joined together, for example by bonding, bonding with epoxy glue or PMMA, etc. This is shown in FIG. 25 illustrated by the dashed arrows.

In the scenario of FIG. 25, the etched structures are not directly connected. Rather, spacers 401, 402 are used. These are not one-piece formed with the etched structures 41 1, 412. In detail, the base 141-1 of the etched structure 41 1 is bonded to the base 141-2 of the etched structure 412 by a base spacer 401 disposed therebetween. Further, the interface element 142-1 of the etched structure 41 1 is connected to the interface element 142-2 of the etched structure 412 via the interface spacer 402. Per spacer 401, 402 are thus two connecting surfaces - where, for example, adhesive etc. is applied - before, which are each assigned to one of the two structures 411, 412.

In FIG. 25, the plane of symmetry is also shown, which by mirroring the two structures 41 1, 412 into each other; and thus in particular the support elements 101-1, 102-2 in the support elements 101-2, 102-2 images. By suitably dimensioning the thickness of the spacers 401, 402, an arrangement with fourfold rotational symmetry can again be achieved (see FIG. The spacers 401, 402 may also be obtained by lithography processing of a wafer. The spacers 401, 402 may therefore be made of silicon, for example. In the example of FIG. 25, the spacers 401, 402 are bulk parts having a low shape-induced elasticity. This causes a strong coupling of the two structures 411, 412 forming the scan module 100.

By using the spacers 401, 402, in particular the distance of the support elements 101-1, 102-1 to 101-2, 102-2 can be set flexibly. In addition, the etched structures may be allowed to have no lateral thickness variation - that is, the bases 141 - 1, 141 - 2, the interface elements 142 - 1, 142 - 2, and the support elements 101 - 1, 101 - 2, 102-1, 102-2 can all have the same thickness 1998, 1999. This allows a particularly simple and less error-prone processing of the wafer. In addition, the material is not stressed. For example, SOI wafers may be dispensable because multiple etch stops are not needed. This can cheapen the process. The shape-induced elasticity of the edge region 146 is made possible by the geometric shape of the edge region 146: in the example of FIG. 25, the edge region 146 of the bases 141-1, 141-2 is bow-shaped. The central area 145 and the edge area 146 have the same thickness 1998. In order to promote tilting of the bases 141-1, 141-2 for exciting the torsional mode 502, the edge regions 146 of the bases 141-1, 141-2 have an increased shape-induced elasticity. This is shown in the example of FIG. 25 also achieved by depressions, which in the edge regions 146 on one of the central regions 145 to be turned Position are located (in FIG 25 by the dashed circle highlighted). Corresponding details are in connection with FIG. 25 described.

FIG. FIG. 26 illustrates aspects relating to the scan module 100. FIG. FIG. 26 is a sectional view taken along line A-A 'of FIG. 25. In particular, FIG. FIG. 26 illustrates aspects related to shape-induced elasticity of the edge regions 146 of the bases 141-1, 141-2.

In the example of FIG. 26, the bases 141-1, 142-2 comprise a central area 145 and an edge area 146 (see also FIG. 4). In this case, the edge regions 146 each have a depression 149 or trench / notch / taper. The depression 149 is in each case arranged along an axis 148, which are each arranged perpendicular to the longitudinal axes 1111, 112 of the support elements (perpendicular to the plane of the drawing of FIG.

The recesses 149 are arranged on a central region 145 to be turned side of the bases 141-1, 141-2. The recesses 149 may be disposed adjacent to the central region 145. As a result, tilting of the bases 141 - 1, 141 - can take place about a tilt axis which is arranged parallel to the longitudinal axes 11 1, 12 of the support elements (perpendicular to the plane of the drawing in FIG. 26) (tilting is illustrated in FIG the dotted arrow shown). Such tilting may be accomplished by bending piezoactuators located at the edge regions 146, for example, spaced apart from the depressions 149 (see also FIGS. 5A, 5B, 6A, 6B).

The recesses could be created by backside structuring of a corresponding wafer, wherein the support elements Vorderseitenstruktunerung can be generated. In this way it can be avoided that, in the case of mechanical removal of wafer material following the front side structure and before the back side structure in the area of the depression, a breakage of the material or excessive stress on the material takes place. Of course, the features of the previously described embodiments and aspects of the invention may be combined. In particular, the features may be used not only in the described combinations but also in other combinations or per se, without departing from the scope of the invention. For example, various techniques have been described above with respect to scan module with a certain number of support elements. The different techniques but can also be used for scan module with a different number of support elements.

For example, while various techniques have been described above with respect to a laser scanner, it would generally be possible to scan light other than laser light.

Various examples have been described in terms of a temporal and spatial superimposition of a transverse mode and a torsional mode. In other examples, however, it would also be possible to temporally and spatially superimpose other degrees of freedom of the movement, for example transversal modes with different orientation and / or transversal modes of different order. In general, it is also not necessary that a temporal and spatial superimposition of different degrees of freedom of movement takes place. For example, in different scenarios, it would be possible for a degeneracy between the different modes to be canceled and for a single fashion to be specifically stimulated.

For example, techniques of local and temporal overlaying for fiber-based scanners have been discussed in German Patent Application DE 10 2016 010 448.1. The corresponding disclosure content - e.g. regarding overlay figures and the amplitude modulation of the excitation - is hereby incorporated by reference. The corresponding techniques can also be used for one-piece MEMS scanners.

For example, techniques for suppressing the tilting of the mirror surface have been described in relation to the German patent application DE 10 2016 013 227.2. The corresponding disclosure content - e.g. concerning the rotationally symmetric arrangement of a plurality of fibers - is incorporated herein by reference. The corresponding techniques can also be used for MEMS scanners. Further, various examples in connection with a piezoelectric actuator have been described above. However, the techniques described herein may also use other forms of drive, e.g. a magnetic drive or an electrostatic drive.

Claims

A scan module (100) for a light scanner (99) comprising:

a base (141, 141-1, 141-2),

an interface element (142, 142-1, 142-2) arranged to be one

Mirror surface (151) to fix, and

- At least one support element (101, 101-1, 101-2, 102, 102-1, 102-2), which is formed elastically, between the base (141, 141-1, 141-2) and the interface element ( 142, 142-1, 142-2) and which has an extension perpendicular to the mirror surface (151) which is not smaller than 0.7 mm,

the base (141, 141-1, 141-2), the interface element (142, 142-1, 142-2) and the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) are integrally formed.

2. Scanning module (100) according to claim 1,

wherein the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) is rod-shaped along a longitudinal axis (11 1, 112) which has a component perpendicular to the mirror surface (151),

the length (211) of the at least one support element (101, 101-1, 101-2, 102,

102-1, 102-2) is not shorter than 2 mm, optionally not shorter than 4 mm, further optional not shorter than 6 mm.

3. scanning module (100) according to claim 1 or 2,

wherein a longitudinal axis (11 1, 12) of the at least one support element (101, 101-1,

101-2, 102, 102-1, 102-2) includes an angle (159) with a surface normal (159) of the mirror surface (151) which is in the range of -60 ° to + 60 °, optionally in the range from -45 ° ± 15 ° or in the range of + 45 ° ± 15 °. 4. scan module (100) according to one of the preceding claims,

wherein the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) comprises at least two support elements (101, 101-1, 101-2, 102, 102-1, 102-2) includes,

wherein longitudinal axes (1 11, 112) of the at least two support elements in pairs include angles with each other which are not greater than 45 °, optionally not greater than 10 °, further optionally not greater than 1 °.

5. scan module (100) according to one of the preceding claims,

wherein the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) has at least two support elements (101, 101-1, 101-2, 102, 102-1, 102-2).

The scan module (100) of any one of the preceding claims, further comprising:

a further base (141, 141-1, 141-2) connected to the base (141, 141-1, 141-2) and not integrally formed therewith,

- Another interface element (142, 142-1, 142-2), with the

Interface member (142, 142-1, 142-2) is connected to this is not formed in one piece, and which is adapted to fix the mirror surface (151), and

- At least one further support member (101, 101-1, 101-2, 102, 102-1, 102-2), which is formed elastically, between the further base (141, 141-1, 141-2) and the further interface element (142, 142-1, 142-2) extends.

7. scanning module (100) according to claim 6,

wherein the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) is mirrored on the plane of symmetry by at least one further support element (101, 101-1, 101-2, 102, 102-1, 102-2) can be imaged.

8. scanning module (100) according to claim 6 or 7,

wherein the base (141, 141-1, 141-2) is connected to the further base (141, 141-1, 141-2) via a base spacer (401), and / or

wherein the at least one interface element (142, 142-1, 142-2) is connected to the at least one further interface element (142, 142-1, 142-2) via an interface spacer (402).

9. scan module (100) according to any one of claims 6 - 8,

wherein the at least one support element comprises two support elements (101-1, 101-2), wherein the at least one further support element comprises two further support elements (102-1, 102-2).

102-2),

wherein the two support members and the two further support members are arranged with a fourfold rotational symmetry with respect to a central axis (220).

10. scan module (100) according to one of the preceding claims,

wherein the base (141, 141-1, 141-2) has a central region (145) and a

Includes edge region (146),

wherein the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) extends away from the central region (145), and

wherein the edge portion (146) has a shape-induced elasticity that is greater than the shape-induced elasticity of the central portion (145).

1 1. Scanning module (100) according to claim 10,

wherein the edge region (146) has a recess (149).

The scan module (100) of any one of the preceding claims, further comprising:

a piezoelectric layer (310, 320) disposed on the at least one

Support member (101, 101-1, 101-2, 102, 102-1, 102-2) is mounted and which is optionally adapted to a torsional mode of the at least one support member (101, 101-1,

101-2, 102, 102-1, 102-2).

The scan module (100) of any one of the preceding claims, further comprising:

- The mirror surface (151) which is connected to the interface element (142, 142-1, 142-2) and is formed with this not in one piece.

14. The scan module (100) of claim 13, further comprising:

a mirror (150) with the mirror surface (151) and a rear surface (152) opposite the mirror surface,

wherein the interface element is attached to the back (152) of the mirror (150).

15. Scanning module (100) according to one of the preceding claims,

wherein a distance between two adjacent support elements (101, 101-1, 101-2, 102, 102-1, 102-2) of the at least two support elements (101, 101-1, 101-2, 102, 102-1,

102-2) in the range of 2% -50% of the length of at least one of the at least two

Support elements (101, 101-1, 101-2, 102, 102-1, 102-2) is optionally in the range of 10% - 40%, further optionally in the range of 12 - 20%.

16. Scanning module (100) according to one of the preceding claims,

wherein the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) extends away from a rear side (152) of a mirror (150) opposite the mirror surface (151).

17. Scanning module (100) according to one of the preceding claims,

wherein the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) comprises n support elements (101, 101-1, 101-2, 102, 102-1, 102-2) .

where n is greater than or equal to two,

wherein the n support elements are arranged with an n-fold rotational symmetry.

18. Scanning module (100) according to one of the preceding claims,

wherein the base, the interface element and the at least one support element all have the same thickness (1998, 1999) perpendicular to the longitudinal axis (11 1, 112) of the at least one support element.

19. Scanning module (100) according to one of claims 1 - 17,

wherein the base and the interface elements have a greater thickness (1998) perpendicular to the longitudinal axis of the at least one support element than the thickness (1999) of the at least one support element.

20. Light scanner (99) comprising:

- The scan module (100) according to any one of the preceding claims, and

- The mirror surface (151), and

- At least one actuator (310, 320) which is adapted to a torsional mode

(502) of the at least one support element (101, 101-1, 101-2, 102, 102-1, 102-2) or a transverse mode (501) of the at least one support element.

21. Light scanner according to claim 20,

wherein the at least one actuator (310, 320) is adapted to the torsional mode

(502) by tilting the base (141, 141-1, 141-2).

22. Light scanner according to claim 21,

wherein the at least one actuator (310, 320) is attached to an edge region (146) of the base.

23. Light scanner according to one of claims 20 - 22,

wherein the at least one actuator (310, 320) comprises a first bending piezoactuator and a second bending piezoactuator,

wherein the base extends between the first bending piezoactuator and the second bending piezoactuator.

24. A method comprising:

Defining an etching mask by means of lithography on a wafer,

Etching the wafer by means of the etching mask to obtain at least one etched structure (411, 412) forming a scanning module (100), and

- Fixing a mirror (150) with mirror surface (151) on at least one interface element (142, 142-1, 142-2) of the scanning module (100).

25. The method according to claim 24,

wherein fixing the mirror comprises at least one of the following techniques:

Glue; anodic bonding; Direct bonding; eutectic bonding;

Thermo-compression bonding; and adhesive bonding.

26. The method of claim 24 or 25, further comprising:

- Connecting a plurality of etched structures (41 1, 412), which form the scan module, before fixing the mirror.

27. The method according to claim 26,

wherein each of the plurality of etched structures (411, 412) has a base (141, 141-1, 141-2), an interface element (142, 142-1, 142-2) and at least one support element (101,

101-1, 101-2, 102, 102-1, 102-2) extending between the respective base (141, 141-1, 141-2) and the respective interface element (142, 142-1, 142-2 ),

wherein connecting the plurality of etched structures (41 1, 412) to the bases (141, 141-1, 141-2) and to the interface elements (142, 142-1, 142-2) of the plurality of etched structures (41 1, 412).

28. The method according to claim 26 or 27,

wherein joining the plurality of etched structures (411, 412) comprises at least one of the following techniques: bonding; anodic bonding; Direct bonding; eutectic bonding; Thermo-compression bonding; and adhesive bonding.

29. The method according to any one of claims 26 - 28,

wherein connecting the plurality of etched structures (41 1, 412) via

Spacers (401, 402) takes place. 30. The method according to any one of claims 24 - 29,

wherein the method of manufacturing a scanning module (100) according to any one of claims 1-19 is used.

31. Scanning module for a resonantly operated light scanner, comprising:

a mirror (150) having a mirror surface (151) and a rear surface (152) opposite the mirror surface (152), and

- At least one elastic support member (101, 101-1, 101-2, 102, 102-1, 102-2), which extends away from the rear side (152) and which is manufactured by means of MEMS techniques.