EP3513439A1

EP3513439A1 - Method for producing electrical contacts on a component

Info

Publication number: EP3513439A1
Application number: EP17764831.8A
Authority: EP
Inventors: Markus Glatthaar; Jonas Bartsch; Mathias Kamp; Rukmangada ROHIT
Original assignee: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Current assignee: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date: 2016-09-16
Filing date: 2017-09-12
Publication date: 2019-07-24
Also published as: WO2018050629A1; CN109716536A; US20190237599A1; US20230014707A1; KR20190045331A

Abstract

The present invention relates to a method for producing one or more electrical contacts on a component, comprising the following steps: - providing a component which has a front and a rear, an outer layer of a transparent, electrically conductive oxide (TCO) or a self-passivating metal or semiconductor being present on the front and/or rear; - applying a structured, electrically conductive seed layer, the application of the seed layer taking place non-galvanically; - galvanically depositing at least one metal on the seed layer.

Description

Method for producing electrical contacts on a component

The present invention relates to a method for producing electrical contacts (for example, in the form of electrical tracks) on a component, in particular an electrical component such as. a solar cell or a light emitting diode, or even a precursor of a printed circuit board. Furthermore, the present invention relates to devices obtainable by this method. For the use of many components, it is necessary that electrical contacts, especially in the form of electrical conductors, are mounted on them. The electrical contacts serve, for example, to dissipate current from the component or to tap voltage from the component or to establish an electrical connection between electrical components that are present on the component. If the component is, for example, a solar cell, then the photocurrent generated by the photovoltaic effect in this semiconductor component can be dissipated via the electrical contacts. Alternatively, the component may be, for example, a precursor of a printed circuit board which is finally transferred into a printed circuit board (PCB) by the application of printed conductors.

In a known and conventional method, a paste containing silver particles is applied to the component and then treated at a temperature high enough to cause coalescence of the silver particles. Therefore Temperatures of at least 800 ° C may be required. For many components, however, such high temperatures are unacceptable.

A heterojunction solar cell, e.g. A silicon heterojunction solar cell (SHJ solar cell) is an exemplary electrical device that is unsuitable for mounting electrical contacts at relatively high temperatures. The SHJ solar cell is a wafer-based crystalline silicon solar cell with an emitter and an amorphous silicon back- and front-surface field. When

Starting material is used for crystalline, in particular monocrystalline silicon, which is n- or p-doped (basic doping). On top of this, on both sides, first a very thin (about 1 to 10 nm) intrinsic (undoped) amorphous

Silicon layer applied. This is followed on one side by the application of a very thin (about 10 to 50 nm), doped, amorphous silicon layer whose doping type (n- or p-type) is opposite to the base doping (amorphous emitter layer). On the other hand will be a thin (10 to 50 nm) amorphous

Silicon layer applied, the doping type of the basic doping corresponds (back or front surface field). Finally, a conductive transparent oxide (English: "Transparent Conductive Oxide" TCO) such as indium tin oxide (ITO) of 50-100 nm thickness is applied.To such a TCO layer usually has a sheet resistance at 25 ° C. The structure and mode of operation of heterojunction solar cells are described, for example, by S. De Wolf et al., Green, Vol. 2 (2012), pp. 7-24.

In order to avoid unwanted crystallization in the amorphous silicon layers of the SHJ solar cell, temperatures of more than 250 ° C should be avoided.

Also for other solar cell types or other electrical components such as

Light-emitting diodes, the attachment of electrical contacts at the lowest possible temperature load is desirable. By using sufficiently small silver nanoparticles, the sintering temperature of silver pastes can be lowered below 200 ° C. The disadvantage here, however, that the pastes can not be stored because the sintering process is slow even at room temperature and that silver nanoparticles represent a significant health risk. In addition, the costs of nanoparticles are significantly higher than for large particles or electrodeposited metals.

Also known is the use of pastes containing organic binders, e.g.

temperature-crosslinking resins and silver particles in flake form. The resin forms a matrix which holds the flakes together and produces adhesion to the outer layer of the electrical component (eg, a layer of transparent electrically conductive oxide (TCO) such as ITO). However, this achieves a significantly lower conductivity than with thermally sintered pastes. This requires more silver and the shading of the

Solar cell front side increased by the tracks.

Alternatively, the tracks can be applied galvanically. This achieves a very good electrical conductivity of the conductor tracks. However, the surface must be printed with a mask of Galvano lacquer as a negative of the conductor pattern. After the electrodeposition, the paint must be removed in a chemical bath. The necessity of this resist mask makes this process but because of the material consumption and the necessary

Wastewater treatment very expensive. In addition, the adhesive strength of the electrodeposited metal layer on a TCO layer (i.e., a layer of a transparent, electrically conductive oxide such as ITO) is sometimes unsatisfactory.

In the case of particularly high-quality components, first of all a thin metal layer or a metal layer stack is applied to the workpiece over the entire surface. Then, for example, a photoresist is applied and photo-lithographically in the form of a Negative mask of the tracks to be generated structured. Alternatively, the negative mask is already structured (recordable by means of inkjet) applied. The non-varnished surface is galvanically reinforced with copper and the copper is optionally protected from oxidation by an additional layer of silver.

Subsequently, the paint is removed in a chemical bath and etched the metal in the previously painted areas. A corresponding metallization process is described for example in US 8,399,287.

US 2014/0295614 describes a method for the metallization of

Back-contact solar cells. The vapor-deposited aluminum seed layer can be activated over the whole area by a zincate step. Subsequently, the application of a local barrier layer can take place. After the galvanic

Deposition must have the barrier layer removed and the activated one

Etched aluminum seed layer.

Even with printed circuit boards, so-called printed circuit boards (PCB) made of plastic, it is not possible to print printed conductors made of sinterable metal particles due to the lack of thermal resistance of the carrier material. Due to the high cost, the lack of conductivity and the inability to solder for the coupling of the electrical components, interconnects made of silver flakes in a resin matrix are only possible in exceptional cases.

An object of the present invention is to provide electrical contacts such as e.g. electrical traces on a component via a process that minimizes thermal stress on the component, avoids the use of masks (e.g., resist masks), and is as efficient as possible.

The object is achieved by a method for producing one or more electrical contacts on a component, comprising the following steps: Providing a component which has a front and a rear side, wherein an outer layer of a transparent, electrically conductive oxide (TCO) or a self-passivating metal or semiconductor is present on the front side and / or the rear side,

- Applying a structured, electrically conductive seed layer on

defined areas of the outer layer, wherein the application of the

Germ layer is not galvanic,

galvanic deposition of at least one metal on the seed layer. As will be described in more detail below, this uses

The method according to the invention comprises a component having a specific outer layer (TCO layer or layer of self-passivating metal or semiconductor) on which a galvanic deposition of conventional metals such as e.g. Copper is not possible or at least strongly inhibited. However, by using a non-galvanic deposition (e.g., via a printing process) in defined areas on the

Outer layer of a structured seed layer with good electrical conductivity, so this structured seed layer (but not the still exposed outer layer) can very well be electroplated and also the electrical contact resistance between the TCO layer and the layer of

self-passivating metal or semiconductor and the applied thereto

Seed layer still sufficiently low to effectively dissipate current from the component (for example, a solar cell) via the electrodeposited metal layer. The outer layer of a self-passivating metal or semiconductor is also referred to below as a self-passivation outer layer.

Coatings made of a self-passivating metal or semiconductor form a thin oxide film at their surface even at room temperature. By the

Presence of this oxide film is the electrodeposition of a metal the self-passivating metal or semiconductor is not possible or at least inhibited. Also on transparent, conductive oxides (TCOs) such as

Indium tin oxide (ITO) can be the electrodeposition of common metals such as copper inhibited, especially at low applied voltage.

Coatings of TCOs or self-passivating metals or semiconductors thus represent surfaces on which a galvanic metal deposition may be inhibited. However, it has been found that these poorly electroplated surfaces quite a relatively low electrical

Have contact resistance to it applied electrically conductive layers, which in turn can be well galvanically coated. In the context of the present invention, this is used to selectively electroplate surfaces by applying to the poorly electroplated surface of a self-passivating metal or semiconductor or a TCO locally in defined areas (for example by a printing process) a surface to be coated well , This acts as a germ or

Seed layer for the subsequent galvanization step. A mask for the application of the structured, electrically conductive seed layer is not required. Also, their application can be carried out at relatively low temperatures, so that the thermal stress of the component (for example, an amorphous silicon layer in a silicon heterocell or the carrier material of a printed circuit board) is minimized.

In the subsequent electroplating step, the metal deposition takes place exclusively or at least predominantly on the structured seed layer. The application of a mask on the self-passivating metal or semiconductor or the TCO is not required because of a galvanic deposition on this

Materials not done or at least inhibited. Thus, after the

Galvanisierungsschritt a structure, for example in the form of one or more tracks, obtained, which allows an effective electrical contacting of the electrical component or the formation of an effective circuit structure of a printed circuit board.

The electrical contacts are in the form of one or more tracks, for example. The electrical contacts serve, for example, to dissipate current from the component or to tap voltage from the component or to establish an electrical connection between electrical components that are present on the component. As already explained above, the method according to the invention initially comprises the provision of a component which has a front and a rear side, wherein on the front and / or the back side an outer layer of a transparent, electrically conductive oxide (TCO) or a self-passivating metal or Semiconductor is present.

The component is, for example, an electrical component (e.g.

opto-electronic device or a semiconductor device) or a precursor thereof. The component to which the electrical contacts are to be attached may also be the precursor of a printed circuit board. The precursor of the printed circuit board preferably contains a plastic (in particular an electrically non-conductive

Plastic), which may optionally be reinforced by fibers, and on this plastic is then preferably the outer layer of the transparent, electrically conductive oxide (TCO) or the self-passivating metal or semiconductor before. The precursor of the printed circuit board may for example be a flexible film or alternatively a rigid plate. A preferred electrical component is for example a solar cell, a diode (eg a light-emitting diode) or a screen, in particular a

Flat panel display ("Fiat Panel Display"), e.g., a liquid crystal display "LCD". In the case of a solar cell, the front side is the illuminated, i. the radiation source facing side of the component. With the method according to the invention, the electrical contacts can be applied, for example, on the front side or on the rear side (for example in the case of an exclusively back-contacted solar cell) or else on both sides of the component.

The electrical device to which the electrical contact is applied need not yet be in its final form, but usually already contains those components that are essential to its function (such as the realization of the photovoltaic effect). Alternatively, the component on which the electrical contact is applied can be a precursor of an electrical component and the other components that are required for the realization of its function are added only after the application of the electrical contact. Under a solar cell is in the context of the present invention a

Semiconductor device understood that shows a photovoltaic effect under the action of radiation energy, usually sunlight.

Preferably, the solar cell is a silicon solar cell.

In a preferred embodiment, the component is a heterojunction solar cell, in particular a silicon heterojunction solar cell (SHJ solar cell) or a precursor thereof. The solar cell can also be a solar cell contacted exclusively via its rear side. In these solar cells, the electrical contacts are present, for example, in the form of an interdigital structure. The process according to the invention is of particular interest for crystalline

Silicon solar cell types, which at least on one of the two surfaces of a crystalline silicon substrate, which serves as a base material of the solar cell, have a conductive layer whose conductivity must be further improved by metallically applied conductor tracks.

These include, for example, solar cell types which have on at least one side of the crystalline silicon acting as the base material an optically transparent, electrically conductive coating which suppresses the recombination of electron-hole pairs on the correspondingly coated surface of the crystalline silicon wafer.

These include in particular silicon heterojunction solar cells (SHJ), in which the passivating layers consist of amorphous silicon. Alternatively, the surface may also consist of a tunable (and thus also perpendicular to the layer also conductive) silicon dioxide layer on which subsequently a conductive polysilicon layer, a silicon carbide layer or a conductive metal oxide such as e.g. Molybdenum oxide, tungsten oxide, nickel oxide or titanium oxide is applied. Since the conductivity of all these views parallel to the surface is very low, preferably a highly conductive TCO layer (for example an ITO layer) is applied to the recombination-suppressing layer system. However, since even when a TCO layer is applied, the conductivity parallel to the surface is too low to be able to dissipate the current efficiently, metallic conductor tracks must additionally be applied to the surface.

For solar cells as a component, in particular for the above solar cell types such as a SHJ solar cell, the inventive method is suitable outstanding because it does not require a high-temperature step for sintering the applied metal layers and can be dispensed with organic masks.

SHJ solar cells are commercially available or can be prepared by methods known to those skilled in the art.

As mentioned above, certain electrical components such as e.g. SHJ solar cells, light-emitting diodes or LCDs (liquid crystal displays) frequently use one or more layers of a transparent, electrically conductive oxide (TCO) as the electrode. In these cases, the TCO layer is therefore already an integral part of the electrical component. The class of TCOs and the use of TCO layers for semiconductor devices are known to those skilled in the art, see e.g. Clark I. Bright, Chapter 7 ("Review of Transparent Conductive Oxides (TCO)") in 50 Years of Vacuum Coating Technology and the Growth of the Society of Vacuum Coaters, eds .: Donald M. Mattox and Vivienne Harwood Mattox, Society of

Vacuum Coaters, 2007 (ISBN 978-1-878068-27-9) and A. Stadler, Materials, 2012, 5, pp. 661-683. Frequently, the TCO layer already exists in these electrical components as the outermost layer ("outer layer") of the component In these cases, it is possible within the scope of the method to directly deposit the electrically conductive seed layer (eg in the form of one or more strip conductors) to apply this TCO outer layer of the electrical component.

Exemplary TCOs for the TCO outer layer are indium tin oxide ("ITO"), aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide ("FTO"), boron-doped zinc oxide or hydrogen-doped indium oxide TCO coatings can be obtained, for example, by physical or chemical vapor deposition.

The TCO layer usually has a sheet resistance at 25 ° C., as determined by the four-point method, in the range of 10 Ω to 1000 Ω, more preferably 50 Ω up to 300 Ω. The TCO layer preferably has this sheet resistance over its entire area. Although TCO layers have a relatively low sheet resistance, the electrodeposition of common metals such as copper on such TCO layers such as an ITO layer is inhibited compared to the deposition on nobler metal surfaces, especially at low applied voltage.

As an alternative to an outer layer of a transparent, electrically conductive oxide (i.e., a TCO layer), the device may comprise an outer layer of a self-passivating metal or semiconductor.

As is known to the person skilled in the art, self-passivating metals or semiconductors are metals or semiconductors which can spontaneously form a passivating, very thin oxide layer in air at room temperature (25 ° C.).

Suitable self-passivating metals are in particular aluminum, titanium, nickel, chromium or zinc or an alloy of one of these metals. A preferred self-passivating semiconductor is silicon.

For example, only one layer of a self-passivating metal or semiconductor can be applied to the front and / or rear side of the component, which then already forms the outer layer. Alternatively, it is also possible to apply two or more layers of self-passivating metals or semiconductors to the component. The outermost of these layers then constitutes the outer layer. If the component (for example a solar cell, in particular an SHJ solar cell) contains a TCO layer, a layer of a TCO layer can be applied directly to this TCO layer

self-passivating metal or semiconductor. This either forms the outer layer or, alternatively, one or more additional layers of self-passivating metals or semiconductors are applied.

Furthermore, it is also possible that at least one layer on the TCO layer a non-self-passivating metal (eg copper or silver or a

Alloy of one of these metals) is present and on this non-self-passivating metal layer one or more layers of self-passivating metals or semiconductors are present.

In order to achieve the best possible compromise between high conductivity and good adhesion to the TCO layer, it may be preferable to apply at least two layers of a self-passivating metal or semiconductor, wherein the metal or semiconductor of the first self-passivating layer is titanium, nickel, Chromium or zinc or an alloy of one of these metals or

Silicon is, and the metal of the second self-passivating layer is aluminum. The first self-passivating layer can be applied directly to the TCO layer. Alternatively, at least one layer of non-self-passivating metal (e.g., copper or silver or an alloy of one of these metals) may be present between the first self-passivation layer and the TCO layer. The self-passivating aluminum layer can already be the outer layer. Optionally, another layer of a self-passivating metal or semiconductor (e.g., titanium, nickel, chromium, or zinc, or an alloy of either of these metals or silicon) may be deposited to form the outer layer. If two or more layers of self-passivating metals or semiconductors are present, these self-passivating layers can follow one another directly or they can be formed by intermediate layers, for example by so-called diffusion barrier layers (eg palladium layers) or layers of non-self-passivating metals (eg Cu or Ag layers). be separated from each other.

For example, a titanium layer and then an aluminum layer are deposited on the TCO layer of the component or a layer of a non-self-passivating metal (eg copper or silver or an alloy of one of these metals) which is present for example on the TCO layer of the component. Layer applied, in In this case, the aluminum layer represents the outer layer. Alternatively, it is also possible, on the TCO layer of the component or a layer of a non-passivating metal (eg copper or silver or an alloy of one of these metals), which is present for example on the TCO layer of the component, a titanium layer, then apply an aluminum layer and then again a titanium layer, in which case the titanium layer is the outer layer. As already mentioned above, an intermediate layer, for example a diffusion barrier layer (for example a palladium layer), may optionally be present between a titanium layer and an aluminum layer.

The application of a coating of a self-passivating metal or semiconductor on the component can be carried out by known methods. The

Outer layer of the self-passivating metal or semiconductor can

For example, physical vapor deposition (e.g., sputtering, also referred to as sputtering), chemical vapor deposition (e.g., plasma assisted vapor deposition PECVD), or even attachment of a film of the self-passivating metal or semiconductor may be obtained. These coating methods only lead to a low thermal load of the component.

If the component is the precursor of a printed circuit board, then for example a prepreg can be provided on which a film of the

self-passivating metal, preferably an aluminum foil (e.g., glued).

The front side and / or rear side of the component is preferably coated with at least 50% of its area, more preferably at least 80% of its area, or even over its entire area with the outer layer formed from the TCO or the self-passivating metal or semiconductor. Preferably, the outer layer of the component has a thickness of <25 μηι, more preferably <15 μηι, more preferably <1.0 μηι or even less than 500 nm. If the component is an electrical component, in particular a semiconductor component such as a solar cell or a diode, it may even be preferred that the thickness of the outer layer is not more than 200 nm, more preferably not more than 100 nm, eg 5-100 nm or 5 -50 nm. Preferably, the outer layer has over at least 90% of its area, more preferably over 95% of its area, the above-indicated layer thickness. The layer thickness can be determined by conventional methods, for example by microscopic measurement in cross section or cross section.

A layer of self-passivating metal or semiconductor automatically forms a thin layer of oxide on its surface in air. This passivating oxide layer prevents or at least inhibits galvanic metal deposition. Optionally, this spontaneous oxide formation may still be assisted by appropriate means (e.g., contacting an oxidizing medium such as ozone) to effect a more uniform formation of the thin oxide layer. It is also possible to chemically modify the passivating surface layer by suitable treatment (for example, formation of a passivating nitride or oxynitride surface layer). However, in view of a simple and efficient process design, it is preferred that the layer of self-passivating metal or semiconductor, apart from the oxide formation in air due to the self-passivation, optionally supported by treatment with ozone or UV illumination at temperatures below 200 ° C, no other chemical modification before application of the

Germ layer is subjected.

Preferably, the contact resistance (at 25 ° C) between the TCO layer or the layer of self-passivating metal or semiconductor and the seed layer applied thereon should be less than 50 m ² , more preferably less than 10 mD cm ² , even more preferably less than 5 mΩcm ² or less be mD.cm ² . The contact resistance can be determined via the transfer line method (also referred to as transfer length method or transfer length measurement). In this method, the measurement of contact resistance is performed using a suitable test pattern. As already stated above, in a further step of the

The method according to the invention comprises applying a patterned, electrically conductive seed layer on defined regions of the outer layer (i.e., the layer of the transparent, electrically conductive oxide (TCO) or the layer of the self-passivating metal or semiconductor), wherein the application of the

Germ layer not galvanic.

This electrically conductive seed layer is applied via a non-galvanic process, but then serves in a subsequent galvanic

Deposition step as a substrate for a metal coating. As is known to the person skilled in the art, the term seed layer (alternatively

Seed layer, English: seed layer) denotes a thin layer, which as

Crystallization germ and adhesion basis for the electrodeposition of a metal acts. Preferably, the application of the structured, electrically conductive

Seed layer in the form of one or more tracks, ie the electrically conductive seed layer is already structured in their arrangement on the outer layer so that it corresponds to the arrangement of the trainees electrical contacts. As is well known to those skilled in the art, electrodeposition is a process in which the substrate to be coated is contacted with a plating bath, usually containing a salt of the metal to be deposited, and the metal on the substrate by application of an external power source is deposited. As the electrodeposition on a TCO layer or a layer of self-passivating metal or semiconductor is at least inhibited, the application of the seed layer via a non-galvanic deposition takes place.

The structured seed layer can be single or multi-layered. If the seed layer is multi-layered, it is composed of two or more superimposed layers, wherein each layer can be made of one or more of the following materials and can be obtained by one or more of the following method steps. Adjacent layers preferably have a different composition.

An application of the seed layer on defined regions of the outer layer takes place, for example, via a printing process, in particular screen printing, inkjet printing, flexographic printing or aerosol printing, a laser transfer process (also referred to as "induced forward transfer" (LIFT)) or an electroless electrochemical deposition (eg zinc deposition by zincate method and / or deposition of chemical nickel) .These coating methods are known to the person skilled in the art.

Components for a germ layer that has a sufficiently high electrical

Have conductivity and a galvanic metal deposition on the

Allow germ layer are known in the art. As an electrically conductive component, the seed layer contains, for example, one or more metals (eg copper or a copper alloy, a noble metal or a noble metal alloy such as silver or a silver alloy, nickel or a nickel alloy (eg a nickel-vanadium alloy), indium or an indium alloy, tin or one

Tin alloy, cobalt or a cobalt alloy), one or more electrically conductive polymers (eg poly-3,4-ethylenedioxythiophene (PEDOT) or a mixture of PEDOT and polystyrene sulfonate (PEDOT: PSS)), one or more electrically conductive carbon materials (eg graphene, graphene, Carbon nanotubes, graphite, carbon black), or a mixture of at least two of these components.

The electrically conductive component of the seed layer may be in the form of, for example, particles (e.g., metal particles or carbon particles). These electrically conductive particles can be in an organic or inorganic

Embedded support material, for example, an organic polymer. The organic polymer may be a thermoplastic or, alternatively, a crosslinkable or, after curing, a crosslinked polymer. For example, the electrically conductive particles of the seed layer are present in a synthetic resin, which after the application of the seed layer over the

Curing process (e.g., by thermal treatment and / or UV treatment). Suitable organic or inorganic support materials for electrically conductive particles which can be used in a printing process are known to the person skilled in the art.

The seed layer can also be applied by a laser transfer process ("aser Induced Forward Transfer" LIFT) .The LIFT method is the

Expert in principle known. Here, the seed layer, preferably made of nickel, silver or copper (particularly preferably nickel), first applied to a flat transparent substrate, for example by means of physical vapor deposition PVD. The substrate is now brought into contact with the outer layer with the seed layer to the outer layer of the component surface, or at least with a distance of less than 1 mm from the

Positioned outer layer of the component. Now, the seed layer is detached from the substrate by means of laser irradiation and transferred to the outer layer of the component.

The seed layer can also be applied by an electroless redox reaction or electroless electrochemical deposition. As is known to the person skilled in the art, Electroless deposition is understood to be a coating process in which the reduction of the metal to be deposited (in contrast to a galvanic deposition) takes place without the use of an external current source. Nickel (also referred to as "chemico-nickel") and / or zinc (eg via the zincate process) is preferably deposited via the electroless electrochemical deposition, In a preferred embodiment, the outer layer (preferably a self-passivating aluminum layer) is initially in defined areas The electroless deposition of the chemico-nickel layer is then carried out on a zincate solution with zinc-zinc coating and electrolytic solutions for the electroless deposition of electroless nickel are known to those skilled in the art can be generated directly in the electrolyte solution by a chemical reaction, for example, by the reducing agent sodium hypophosphite.The electrolyte solution also contains a nickel salt such as nickel sulphate.The nickel deposition is autocatalytic.Since phosphorus also stores, e you get a nickel-phosphorus alloy. The

Galvanizing of defined areas of the aluminum layer can take place, for example, by applying the zincate solution with a stamp of defined geometry.

In the areas in which the seed layer is applied to the outer layer, it may be that as a result of this application (eg by a LIFT process or by electroless zinc and / or chemical nickel), the resulting from the self-passivation thin oxide layer was removed.

The structured seed layer is preferably produced without using a mask.

If the structured germ layer is multilayered, the application of the

structured seed layer include, for example, the following steps: Applying an electrically conductive metal layer S 1 on the

Outer layer (i.e., the TCO layer or the self-passivation layer) via vapor deposition,

Applying an electrically conductive layer S2 on defined regions of the metal layer S1 by a printing process, in particular screen printing, inkjet printing, flexographic printing or aerosol printing, a laser transfer process or an electroless electrochemical deposition (e.g.

"Chemical nickel" or zinc via the zincate process),

Removing the exposed, not covered by the layer S2 areas of the metal layer Sl.

By removing the exposed, not covered by the layer S2 areas of the metal layer Sl is the underlying TCO layer or

self-passivating layer exposed again. In the following

Electroplating step then takes place, as already explained above, a selective metal deposition on the seed layer, while a metal deposition on the exposed TCO layer or self-passivation layer does not take place or is at least inhibited.

The electrically conductive metal layer S 1, for example, via a

physical vapor deposition (e.g., sputtering) or a chemical vapor deposition

Gas phase deposition (eg, a plasma-assisted vapor deposition PECVD) are applied to the TCO layer or the self-passivation layer. The electrically conductive metal layer S1 preferably has a relatively small thickness, for example a thickness in the range of 5-100 nm, more preferably 5-75 nm, more preferably 5-50 nm. The electrically conductive metal layer S1 preferably contains one or more of the following metals : Copper or a copper alloy, silver or a silver alloy, tin or a tin alloy, cobalt or a cobalt alloy, nickel or a nickel alloy (eg a nickel-vanadium alloy). The metal layer S1 obtained via a vapor deposition can be single-layered or multi-layered. A multilayer metal layer Sl For example, it can be obtained by adding two or more

Gas phase deposits are carried out sequentially.

With regard to suitable electrically conductive components for the layer S2, reference may be made to the above statements. The electrically conductive layer S2 therefore contains, for example, one or more metals (for example copper or a copper alloy, a noble metal or a noble metal alloy such as silver or a silver alloy, nickel or a nickel alloy, indium or a)

Indium alloy, tin or a tin alloy, cobalt or a cobalt alloy), one or more electrically conductive polymers (eg poly-3,4-ethylenedioxythiophene (PEDOT) or a mixture of PEDOT and polystyrene sulfonate (PEDOT: PSS)), one or more electrically conductive Carbon materials (eg graphene,

Graphene oxide, carbon nanotubes, graphite, carbon black), or a mixture of at least two of these components.

Before the galvanic deposition of a metal on the seed layer, the exposed areas of the metal layer S1 not covered by the layer S2 are removed. This is done by methods known to those skilled in the art,

for example, by etching or electrochemical oxidation. In electrochemical oxidation, by applying a suitable potential, the metal is oxidized (i.e., converted into metal cations) and the metal cations dissolve in an adjacent liquid electrolyte. By removing the exposed areas of the metal layer S1 not covered by the layer S2, the underlying TCO layer or self-passivation layer is exposed.

Preferably, the seed layer has a thickness of <20 μιη, more preferably <8 μιη, more preferably <2 μιη on. The minimum thickness of the seed layer is, for example, 100 nm. The seed layer preferably has at least 80% of its area, more preferably over its entire area, the above-indicated layer thickness. The layer thickness can be determined by conventional methods, for example by microscopic measurement in cross section or cross section.

As stated above, in a further step of the method according to the invention, the galvanic deposition of at least one metal on the

Seed layer.

The electrodeposited metal is preferably copper or a copper alloy, nickel or a nickel alloy, or a noble metal such as silver or a silver alloy. The electrodeposited layers preferably have a layer thickness of 1-100μιη, preferably 1-20μιη, more preferably, 2-15μιη. The layer thickness can be determined by common methods, e.g. by microscopic measurement in cross section or cross section. For the electrodeposition, the seed layer is brought into contact with a galvanic bath containing a salt of the metal to be deposited. In the

Electroplating bath is usually immersed in an auxiliary electrode, e.g. a copper anode ("sacrificial anode") or a titanium electrode acts as a counterelectrode, and when the seed layer is exposed to a suitable negative (i.e., cathodic) electrical potential, the metal ions are reduced and the metal deposits on the seed layer.

The galvanic deposition can be done by means of direct current or by means of pulse current. As will be described in more detail below, by using a pulse current that changes sign, the selective

Deposition of the metal on the seed layer can be further improved. One

Pulse current, which changes sign, has alternating negative (cathodic) and positive (anodic) current pulses. As already explained above, the electrodeposition of the metal on the TCO layer or the layer of the self-passivating metal or semiconductor is at least strongly inhibited. For the electrodeposition step, therefore, it is not necessary to protect those regions of the outer layer that are not covered by the structured seed layer by a mask. The areas of the TCO layer or the layer of the self-passivating metal or semiconductor which are still exposed after the application of the seed layer therefore remain unmasked even during the electrodeposition and can come into contact with the electroplating bath.

Although the galvanic deposition on the outer layer of the component is at least inhibited, it has been found in the present invention that when a negative electrical potential is applied, the current density at the surface of this outer layer can still be sufficiently high for the deposition of smaller metal crystallites (eg due to a very high degree of conductivity) small thickness of the passivating

Oxide layer or due to structural defects of this passivating oxide layer).

In a preferred embodiment, the electrodeposition of the metal takes place by means of pulse current. In the pulse current method is a time

changing current is used, i. the seed layer is subjected to a time-varying potential.

In a particularly preferred embodiment, a pulse current is used which changes sign, i. which has alternating negative (cathodic) and positive (anodic) current pulses. As long as the germ layer with a negative

Potential is applied (ie, a cathodic current pulse is exposed), it comes to the electrodeposition of the metal on this seed layer. To a small extent, it may also be in this time interval to a metal deposition on the exposed (and therefore in contact with the galvanic electrolyte in contact) areas of the TCO layer or the layer of self-passivating metal or Semiconductors are coming. If the electrical potential changes its sign, so that the seed layer is now subjected to a positive potential, a dissolution of already deposited metal occurs. However, this dissolution is primarily at the expense of the small amount of metal deposited on the exposed outer layer of the device, while the dissolution of the metal deposited on the seed layer is not significantly significant.

FIG. 1 shows, in a microscope photograph in plan view, the surface of an outer layer of a self-passivating metal, on which a strip-like seed layer and on this seed layer an electrodeposited one

Metal coating, wherein for the electrodeposition no

Pulse current was used. Although the metal plating on the surface of the self-passivating metal is inhibited, but due to the small thickness or due to defects in the thin oxide film, there is still some degree of electrodeposition of metal crystallites on the outer layer. FIG. 2 shows in a microscope image in plan view the surface of an outer layer of a self-passivating metal, on which a strip-like seed layer and on this seed layer a galvanic

deposited metal coating present. The electrodeposition was carried out using pulse current with alternating cathodic and anodic

Current pulses. As Figure 2 shows, the metal deposition takes place almost exclusively on the strip-like seed layer. Virtually no metal deposits are visible on the exposed outer layer. With a suitable choice of time intervals and the positive and negative

Voltages or currents, the seeds dissolve completely in areas without seed layer again, while in the areas with seed layer electrodeposited metal remains, which steadily increases from a interval with negative voltage on the workpiece to the next. Surprisingly, the parameter space suitable for this purpose is very large. The intervals in which the germ layer is applied with a negative potential (ie, the cathodic current pulses), can last up to 10 s, but preferably the time is less than 500 ms, more preferably less than 100 ms, more preferably less than 10 ms. The intervals of positive potential at the seed layer opposite the electroplating bath (ie, the anodic current pulses) are preferably shorter than those

Intervals of negative potential, more preferably less than half as long, most preferably less than a quarter as long. Preferably, a maximum current density amplitude of 1-60 A / cm ² , based on the surface of the seed layer, is given during the intervals in which the seed layer is subjected to a negative potential. In the case of a negative potential of the seed layer, the maximum current amplitude with respect to the electroplating bath is preferably to be selected to be at most as high as at a positive potential. Particularly preferred is the

Current amplitude at negative potential of the seed layer half as high as selected at positive potential. More preferably, the current amplitude at positive potential is selected so high that the maximum voltage amplitude limits the current.

For the maximum voltage amplitudes, preference is given to: anodic

Voltage amplitude (preferably> 2V, more preferably> 5V, more preferably> 9V) at the seed layer opposite the electroplating bath is preferably higher than the cathodic voltage amplitude (preferably <3V, more preferably <2V, even more preferably <1.7V).

If the galvanic deposition of the metal carried out by means of pulse current with alternating sign, it can in the time interval in which the seed layer is subjected to a positive potential, not only to a resolution of metal already deposited, but also to an oxidation of the material

Outer layer come, especially when the outer layer is a layer of a self-passivating metal or semiconductor such as aluminum or silicon. In the areas where the exposed outer layer is the Electroplating contacted, the self-passivation outer layer can be increasingly oxidized. The oxidation progresses inwardly in the self-passivation layer from the surface, and finally, in this layer oxide areas can be obtained which extend over the entire thickness or height of the layer

Extend outer layer. If the outer layer is chosen thin enough,

For example, 5-100 nm or 5-50 nm, so arise optically transparent oxide regions. The optical transparency is particularly advantageous for solar cells, e.g. SHJ solar cells. In a preferred embodiment, therefore, the component is a solar cell

(In particular, a SHJ solar cell), on the front and / or back of an outer layer of a self-passivating metal or semiconductor, preferably aluminum, titanium, nickel, chromium, zinc or silicon, whose thickness is 5-100 nm, more preferably 5-50 is nm, and the electrodeposition by means of pulse current with alternating sign (ie with alternating cathodic and anodic current pulses). Preferably, the duration and amplitude of the cathodic and anodic current pulses are selected so that the self-passivating outer layer forms oxide regions which extend over the entire thickness or height of the

Extend outer layer. The layer of self-passivating metal or semiconductor is deposited, for example, by chemical or physical vapor deposition (e.g., CVD such as PECVD or sputtering). If the solar cell is an SHJ solar cell, the outer layer may become

self-passivating metal or semiconductor on the TCO layer on at least one of the two sides of the SHJ solar cell. As mentioned above, it is also possible that two or more layers of self-passivating metals or semiconductors are present, the outermost of these layers then representing the outer layer. For example, one of the internal layers of self-passivating metal or semiconductor may be directly attached to the TCO layer. In a preferred embodiment, the seed layer and the

exposed, not covered by the seed layer areas of the outer layer of at least two-phase treatment with a pulse current, wherein

in the first phase the accumulated charge flowing during the anodic pulses is smaller than the accumulated charge flowing during the cathodic pulses, and

in the subsequent second phase, the summed charge which flows during the anodic pulses is greater than the summed charge which flows during the cathodic pulses,

wherein at least the first phase of this pulse current treatment takes place during the electrodeposition of the metal.

By using a pulse current treatment, the two different

Having portions (i.e., first and second phases that satisfy the above conditions), the selective deposition of the metal on the

Seed layer and the oxidation of the exposed areas of the outer layer can be further improved.

Optionally, both phases of this pulse current treatment can take place during the electrodeposition of the metal in the electroplating bath. Alternatively, it is also possible that the first phase of the pulse current treatment takes place during the electrodeposition of the metal in the electroplating bath, then the seed layer and the exposed areas of the outer layer of the

Electroplating be transferred into an anodizing and the second phase of the pulse stream treatment is carried out in the anodizing.

In order to further optimize the as complete as possible oxidation of the self-passivating metal or semiconductor in the exposed (ie not covered by the seed layer) regions of the outer layer, it may be preferable, after the electrodeposition of the metal (preferably using a Pulse current with cathodic and anodic pulses occurred) one more

Anodization of the self-passivating metal (e.g., aluminum) or semiconductor in an anodizing bath. As is known to those skilled in the art, the anodization is an electrolytic process for producing or reinforcing oxide layers on metals or semiconductors. Suitable anodizing baths are known to those skilled in the art and include e.g. Sulfuric acid, oxalic acid, citric acid or chromic acid.

Preferably, the anodization is carried out using a pulse current with alternating cathodic and anodic pulses. Since a certain dissolution of the already electrodeposited metal takes place during the anodization during anodic voltage application, the anodization bath inevitably also contains metal ions, preferably metal ions are additionally added to the bath by adding a corresponding metal salt and / or using a counterelectrode from the corresponding metal in the bath , When the anodization is pulsed, the cathodic pulses can thus be used for the deposition of the metal. Preferably, in the anodization in the anodization bath, the accumulated charge that flows during the anodic pulses is greater than the accumulated charge that flows during the cathodic pulses.

In the electroplating bath, the galvanic metal layer grows on the seed layer and the anodic pulses prevent the parasitic deposition on the remaining outer layer in this phase. In the anodization bath, in the regions in which the outer layer does not have a seed layer with a galvanic layer deposited thereon, there is an increased conversion of the outer layer into a corresponding oxide layer. The charge flowing during the anodic pulses may be calculated from the integral of the current over time during which the device is subjected to anodic potential. Accordingly, the charge flowing during the cathodic pulse can be discharged from the Integral of the current over the time during which the component is subjected to cathodic potential can be calculated. Regarding the changing

Signs of the flow from Andodischer to cathodic flow direction is used to compare the flowed charges in each case the absolute value of the charge.

A preferred embodiment using the SHJ solar cell will be explained in more detail with reference to Figures 3 a and 3b. Figure 3a shows schematically in cross section a SHJ solar cell 1, a thin

Outer layer 2 of a self-passivating metal or semiconductor (e.g., Al, Ti or Si) and a patterned seed layer 3 present on defined regions of the self-passivation outer layer 2. The outer layer 2 can

For example, be applied by PECVD and preferably has a thickness in the range of 5-100 nm, more preferably 5-50 nm. The self-passivating

Outer layer 2 is present on the TCO layer (not shown in FIG. 1a) of the SHJ solar cell. Alternatively, between the TCO layer and the

self-passivation outer layer one or more additional layers

(For example, another layer of a self-passivating metal or semiconductor or a layer of a non-passivating metal such as Cu, Ag or Pd) are present. The structure of an SHJ solar cell 1 has already been described in more detail above and is therefore not shown in detail in FIG. 3 a. A very thin passivating oxide film (not shown) inevitably forms on the surface of the self-passivating outer layer 2. By means of a suitable method (for example a printing method such as screen printing, inkjet printing or aerosol printing, a laser transfer method or an electroless electrochemical deposition), an electrically conductive seed layer is applied to defined regions of the self-passivating outer layer 2. As an electrically conductive component, the seed layer 3 contains, for example, an or several metals (eg copper or a copper alloy, nickel or a nickel alloy, indium or a Indium alloy, tin or a tin alloy, a noble metal such as silver or a silver alloy, zinc or a zinc alloy, chromium or a chromium alloy, cobalt or a cobalt alloy), one or more electrically conductive polymers (eg poly-3,4-ethylenedioxythiophene (PEDOT) or a mixture of PEDOT and polystyrene sulfonate (PEDOT: PSS)), one or more electrically conductive

Carbon materials (e.g., graphene, graphene oxide, carbon nanotubes, graphite, carbon black) or a mixture of at least two of these components.

The electrodeposition of a metal 4 then takes place on the seed layer 3 using a pulse current with cathodic (negative) and anodic (positive) current pulses. The structure thus obtained is shown schematically in FIG. 3b. For the electrodeposition, the seed layer 3 and the exposed areas of the outer layer 2 were brought into contact with a galvanic bath. The presence of the outer layer 2 protects the sensitive TCO layer of the SHJ solar cell from the chemically aggressive electroplating bath. The seed layer 3 was subjected to an electrical potential, which periodically changes its sign. The deposition of the metal 4 takes place predominantly only on the seed layer 3, since the galvanic metal deposition is inhibited on the passivated surface of the outer layer 2. In the context of the present invention, however, it was recognized that a small

Metal deposition also takes place on the passivated surface of the outer layer 2. By using a pulse current with a different sign, these parasitic metal deposits on the exposed areas of the outer layer 2 can be largely dissolved again. In addition, in the exposed areas of the outer layer 2 which are therefore in contact with the electroplating bath, oxidation of the metal or semiconductor progressing from outside to inside occurs. Finally, oxide layers 5 which extend over the entire thickness of the outer layer 2 are formed in the outer layer. The regions of the outer layer 2 which lie below the seed layer 3 remain metallic or semiconductive. The result is a coating 7 which is a lateral one Has structuring in which oxidized regions 5 and metallic or semiconductive regions 6 alternate. The seed layer 3 is present on the metallic or semiconducting regions 6 of the laterally structured coating 7 and is completely covered by the electrodeposited metal layer 4. Due to the small thickness, the oxide regions 5 are transparent. unnecessary

Shading effects that could reduce the efficiency of the solar cell are thereby avoided. Due to the Eigenpassivierung can between the

metallic or semiconducting regions 6 and the structured seed layer 3 present thereon, a thin oxide layer, provided that it was not removed process-related during the application of the seed layer in these areas. As mentioned above, the contact resistance between the metallic or semiconductive region 6 and that on it

applied seed layer relatively low, so that the current generated in the solar cell via the photovoltaic effect can be dissipated in an effective manner via the metallic or semiconductive regions 6, the seed layer and the electrodeposited metal layer. The method can be performed without using a mask. A significant thermal load of the component is avoided. As an alternative to as complete as possible anodization of the exposed areas of the outer layer during and / or after the electrodeposition, it is also possible in the context of the present invention, these exposed areas of the outer layer after the electrodeposition of the metal by a

Remove etching treatment. In this case, recesses (ie, solid-free areas) are created between the metallic or semiconductive areas covered by the seed layer. For example, it can be used to produce electrical contacts with an interdigital structure, as required for the back-side contact of solar cells. Even with an etching treatment of the exposed regions of the outer layer to remove the self-passivating metal or semiconductor, it may be preferable to carry out the previously occurring electrodeposition using pulsed current with alternating sign in order to minimize parasitic metal deposits in the exposed regions of the outer layer. However, the duration and amplitude of the anodic and cathodic current pulses are preferably chosen such that oxidation of the outer layer is kept as low as possible (eg only at the surface of the outer layer, but not deeper oxidation). As a result, the individual tracks remain electrically connected. This is advantageous because so all the tracks in the

Galvanic process grow evenly without having to provide each individual web with an external contact.

In the etching treatment, after the electrodeposition of the metal on the seed layer, the exposed areas of the outer layer are treated with an etching bath. The outer layer is thereby removed in these areas. After the etching step, areas of self-passivating metal or semiconductor, on which there is a seed layer with electrodeposited metal coating and between these areas of self-passivating metal or semiconductor, remain on the component (e.g., the solar cell or the precursor of the circuit board)

Recesses (ie solids-free areas) are present. Also in this case, a lateral structuring is produced in the outer layer. Suitable etching baths are known to the person skilled in the art (for example basic or acid etching baths). In a preferred embodiment, the component is subjected to a negative voltage relative to the etching bath. This may be particularly advantageous if the component, in particular a solar cell such as a SHJ solar cell, a TCO layer (eg, an ITO layer) contains and this TCO layer is to be exposed by the treatment in the etching bath. Due to the negative voltage application of the component with respect to the etching bath, corrosive damage to the TCO layer is avoided or at least significantly reduced. The amount of negative voltage may vary depending on the metals to be removed in the etching bath.

For example, the component is compared with the etching bath with a negative

Voltage of 0.2-1.5 V, more preferably applied 0.5-1.0 V, especially when it comes to the metals to be removed in the etching bath to aluminum and / or titanium.

As described above, in a SHJ solar cell having a TCO layer, the self-passivation outer layer may be directly on the TCO layer, or alternatively one or more additional layers may be interposed between the TCO layer

self-passivation outer layer and the TCO layer are present. If an etching treatment is carried out and if one or more additional layers are present between the self-passivating outer layer and the TCO layer, these additional layers are preferably likewise removed by the etching treatment so that the TCO layer of the SHJ solar cell is at least partially exposed.

An exemplary structure in which the lateral structuring takes place by forming recesses between the regions 6 of the self-passivating metal or semiconductor remaining after the etching treatment is shown in FIG. On the remaining areas 6, the electrically conductive seed layer 3 is present. This electrically conductive seed layer 3 is covered by the electrodeposited metal layer 4. The regions 6 are preferably located directly on the TCO layer of the SHJ solar cell 1. The TCO layer is thus preferably at least partially exposed by the etching treatment. If, during the manufacturing process, the self-passivation outer layer has been applied directly to the TCO layer of the solar cell, the regions 6 consist of this self-passivating metal or semiconductor. If several layers were applied to the TCO layer of the solar cell, also each of the areas 6 has a corresponding one

Layer structure on. The uppermost layer of a region 6 in this case is formed by the metal or semiconductor of the self-passivation outer layer and is in direct contact with the seed layer. The application of a galvanically coated workpiece in

Galvanic bath with a potential with periodically changing sign can be realized by measures that are known in the art.

For example, this is realized by the circuit shown in Figure 5: The operational amplifier OP1 controls with its output the push-pull stage, consisting of the npn (Darlington) transistor Tl and the pnp (Darlington) transistor T2 to. The differential amplifier OP2, which measures the voltage drop across the shunt resistor Rsh, is attenuated via an RC element (Cl, Rl, R2) fed back to the inverting output of OP1. If the selected amplitudes of the positive potential, predetermined by V +, and those of the negative potential, given by V-, are sufficiently large, the current is given by the voltage signal at the non-inverting input of OP1, since OP1 this signal with the voltage drop at Shunt resistor Rsh compares and drives the push-pull stage so that the voltage drop in Rsh caused by the current is equal to the signal voltage. The amplitudes of the signal voltage divided by the

Shunt resistance thus results in the amplitudes of the current through the workpiece, unless the voltages V + and V- have a limiting effect. Preferably, during the application of the workpiece with a negative potential, the voltage V + is chosen so high that the predetermined current is reached.

As described above, the use of a self-passivation outer layer results in most of the electrodeposition on the seed layer and not on the exposed (i.e., non-seeded) regions of the self-passivation outer layer. Even if the self-passivation outer layer has a defect or is damaged before the electrodeposition, a thin one automatically forms again

Oxide layer that closes this defect. This is advantageous over one

Procedure using, for example, the following: A non-self-passivating metal layer (eg Cu or Ag) is applied to the component. A thin dielectric layer is subsequently applied to this non-self-passivating metal layer, for example by oxidation of the metal surface or by applying a separate dielectric material such as Al 2 O 3 or SiO 2 (eg by sputtering). This is followed by the application of a structured seed layer via a non-galvanic process step and the electrodeposition of a metal on the seed layer. However, if the dielectric layer is defective, this defect is not automatically cured by the underlying non-self-passivating metal. In galvanic treatment, therefore, not only does metal deposition occur on the structured seed layer, but also significant amounts of the metal are deposited in the area of the defect.

The present invention also relates to an apparatus obtainable by the method described above.

The present invention also relates to a device containing

a component having a front side and a rear side, wherein on the front side and / or the back side of the component there is a laterally structured coating which has metal or semiconducting regions of a self-passivating metal or semiconductor at defined intervals,

an electrically conductive seed layer present on the metallic or semiconducting regions of the laterally structured coating,

a galvanically deposited metal layer that covers the seed layer, preferably completely covered.

The lateral structuring of the coating of the component results from the fact that the regions of self-passivating metal or semiconductor in the lateral direction, ie parallel to the surface of the front or back are present at defined intervals. With regard to preferred components, reference may be made to the above statements. Thus, the component is for example an electrical component (eg an optoelectronic component or a semiconductor component, in particular a solar cell) or a preliminary stage of a printed circuit board. A preferred electrical component is for example a solar cell, a diode (eg a light emitting diode) or a screen, in particular a flat screen ("Fiat Panel Display"), eg a liquid crystal screen "LCD". In the case of a solar cell, the front side is the illuminated side, ie the side of the component facing the radiation source. A particularly preferred solar cell is an SHJ solar cell.

In the laterally structured coating, oxidic regions may be present between the metallic or semiconducting regions. The oxidic regions preferably extend over the entire thickness or height of the laterally structured coating. The oxide region is formed by an oxide of the self-passivating metal or semiconductor (e.g., an alumina or a silica). In this case, metallic or semiconductive regions and oxide regions alternate in the lateral direction. As already described above, the oxide regions during the galvanic

Metal deposition using a pulsed current with alternating

Signs are generated. In the areas of the outer layer, on which the structured germ layer was attached and therefore not with the

Electroplating come into contact, there is essentially no oxidation and the metallic or semiconducting structure is retained in these areas.

As an alternative to the oxidic areas may be in the laterally structured

Coating between adjacent metallic or semiconductive areas in each case a recess (ie a solid-free area) are present. As already described above, these recesses result from an etching step, which is carried out after the electrodeposition of metal. Preferably, the extends Recess over the entire thickness or height of the laterally structured

Coating. Thus, the recess has a depth corresponding to the thickness of the

Coating corresponds. If the component is an electrical component, such as an electronic component. a solar cell (preferably a SHJ solar cell), a diode (e.g., LED) or a screen (e.g., LCD), the laterally structured coating preferably has a thickness of not more than 200 nm, more preferably not more than 100 nm, e.g. 5-100 nm or 5-50 nm, on. The laterally structured coating preferably has the abovementioned layer thickness over at least 90% of its area, more preferably over 95% of its total area. The layer thickness can be over common

Method can be determined, e.g. by microscopic measurement in cross section or cross section. In the case of a solar cell, the metallic or semiconducting regions of the laterally structured coating may, for example, have a width in the range from 10 .mu.m to 80 .mu.m, more preferably 10 .mu.m to 50 .mu.m, and may be present, for example, at intervals of 0.5 mm to 2.5 mm , As already explained above, self-passivating metals or semiconductors are metals or semiconductors which spontaneously form a passivating, very thin oxide layer in air at room temperature (25 ° C.).

Suitable self-passivating metals are in particular aluminum, titanium, nickel, chromium or zinc or an alloy of one of these metals. The self-passivating metal may be in elemental form or in the form of an alloy. A preferred self-passivating semiconductor is silicon. In the oxide regions there is an oxide of the self-passivating metal or semiconductor.

As described above in the context of the manufacturing process, two or more layers of self-passivating metals or semiconductors and / or at least one layer of a non-self-passivating metal (eg Ag, Cu or Pd or an alloy of one of these metals) are applied under the

Condition that the outermost layer is a self-passivation layer. In this case, the metallic or semiconducting regions of the laterally structured coating may contain two or more self-passivating metals or semiconductors and / or one or more non-self-passivating metals. The metallic or semiconductive regions then have a layer structure and the uppermost layer, which is in direct contact with the seed layer, contains the metal or the semiconductor of the self-passivation outer layer. For example, the metallic or semiconductive regions contain at least a first layer of Ti, Ni, Cr or Zn or an alloy of one of these metals or Si and a second layer of Al, one of these layers being in direct contact with the seed layer. Optionally, one or more layers of non-self-passivating metal (e.g., Cu, Ag, or Pd) may be present in these regions.

In the case of a solar cell, in particular a SHJ solar cell, the metallic or semiconducting regions of the laterally structured coating can be present, for example, on a TCO layer and be separated from one another either by recesses (as a result of an etching treatment) or by oxide regions (as a consequence of the pulsed current treatment) / or post-treatment in one

Anodizing bath).

In an exemplary embodiment, the device is an SHJ solar cell containing a TCO layer (e.g., an ITO layer), the laterally structured one

Coating on the TCO layer is present, in the laterally structured

Coating between the metallic or semiconducting areas

Recesses are present and the recesses extend over the entire thickness of the laterally structured coating, so that the TCO layer is exposed in the areas of the recesses. Preferably, the seed layer is present essentially only on the metallic or semiconducting regions, but not on the oxide regions.

Preferably, the surface of the oxide regions is substantially neither with the electrically conductive seed layer nor with the electrodeposited

Covered metal layer.

If the component is the precursor of a printed circuit board, then the laterally structured coating preferably has a thickness of <25 μm, more preferably <10 μm, even more preferably <1.0 μm. The layer thickness can be over common

Method can be determined, e.g. by microscopic measurement in cross section or cross section.

As stated above, the device contains an electrically conductive seed layer which is present on the metallic or semiconducting regions of the laterally structured coating.

With regard to suitable materials for the electrically conductive seed layer, reference may be made to the above statements. As an electrically conductive component, the seed layer contains, for example, one or more metals (eg copper or a copper alloy, a noble metal or a noble metal alloy such as silver or a silver alloy, nickel or a nickel alloy (eg a nickel-vanadium alloy), indium or an indium alloy, tin or a tin alloy, cobalt or a cobalt alloy), one or more electrically conductive polymers (eg poly-3,4-ethylenedioxythiophene (PEDOT) or a mixture of PEDOT and

Polystyrenesulfonate (PEDOT: PSS)), one or more electrically conductive

The electrically conductive component of the seed layer can be present for example in the form of particles (eg metal particles or carbon particles). These electrically conductive particles may be embedded in an organic or inorganic carrier material, for example an organic polymer. The organic polymer may be a thermoplastic or, alternatively, a crosslinkable or, after curing, a crosslinked polymer. For example, the electrically conductive particles of the seed layer are present in a synthetic resin, which after the application of the seed layer over the

Curing process (e.g., by thermal treatment and / or UV treatment). Suitable organic or inorganic carrier materials which can be used in a printing process are known to the person skilled in the art. A seed layer of electrically conductive particles which are embedded in an organic or inorganic carrier material can be applied particularly advantageously via a printing process.

Alternatively, in a preferred embodiment it is also possible for the seed layer to be formed by a zinc layer (for example via a zincat treatment carried out locally) and a layer of chemical nickel applied to this zinc layer.

As a result of the self-passivation, a thin oxide layer can be present between the metallic or semiconductive regions of the laterally structured coating and the seed layer applied thereon. However, since this thin oxide layer may be process-removed during application of the seed layer (e.g., by a LIFT process) in these regions, it is also possible for the metallic or semiconducting regions and the seed layer deposited thereon to be immediately adjacent to one another.

The electrically conductive seed layer is preferably in the form of one or more tracks. Preferably, the seed layer has a thickness of <20 μιη, more preferably <8 μιη, more preferably <2 microns. The minimum thickness of the seed layer is, for example, 100 nm. The seed layer preferably has at least 80% of its area, more preferably over its entire area, the above-indicated layer thickness. The layer thickness can be determined by conventional methods, for example by microscopic measurement in cross section or cross section.

The structured seed layer can be single or multi-layered. If the seed layer is multi-layered, it is made up of two or more superimposed layers, wherein each layer can be made of one or more of the above-mentioned materials.

As described above, a multilayer seed layer includes, for example, an electrically conductive metal layer resulting from vapor deposition, and an electrically conductive layer deposited thereon over

Printing method, a laser transfer method or an electroless electrochemical deposition was obtained.

As stated above, the device also includes a galvanic

deposited metal layer covering the seed layer. Preferably, the

The seed layer completely covered by the electrodeposited metal layer, including the flanks, which laterally delimit the seed layer. The complete coverage of the seed layer with the electrodeposited metal is advantageous, since thereby the seed layer in the finished product from oxidation,

Moisture or other chemical attack is effectively protected by the galvanic layer.

The electrodeposited metal is preferably copper or a copper alloy, nickel or a nickel alloy, or a noble metal such as silver or a silver alloy. Preferably, the device is obtainable via the method described above.

The present invention also relates to a device containing

- A component having a front and a back, wherein the

Front side and / or the back of the component is formed by a coating of a transparent conductive oxide (TCO coating),

an electrically conductive seed layer, which is applied in defined areas on the TCO coating,

- A galvanically deposited metal layer that covers the seed layer, preferably completely covered.

With regard to the preferred properties of the TCO coating, the electrically conductive seed layer and the electrodeposited metal layer, reference may be made to the above statements.

The component is preferably an electrical component (for example an optoelectronic component or a semiconductor component, in particular a solar cell). A preferred electrical device is, for example, a solar cell, a diode (e.g., a light emitting diode), or a display screen, particularly a flat panel display ("Fiat Panel Display"), such as a liquid crystal "LCD" screen. In the case of a solar cell, the front side is the illuminated, i. the radiation source facing side of the component. A particularly preferred solar cell is an SHJ solar cell.

Preferably, the surface of the TCO coating is not substantially covered by the electrodeposited metal layer.

The invention will be explained in more detail by the following examples. Example 1: Application of electrical contacts on a carrier material made of plastic for producing a printed circuit board

As a component acts a plastic plate on the outer layer as a thin (1 μηι) aluminum coating was applied. The aluminum coating was glued as a foil. If necessary, via-holes can be drilled to inner or other conductive tracks. Since aluminum is a self-passivating metal, a thin, passivating oxide film inevitably forms on the outer layer. A silver particle-containing paste with a volatile solvent with the pattern of the desired printed conductors is applied to the aluminum layer by screen printing. The workpiece is then heated at 100 ° C for 5 minutes to expel the solvent from the paste. Thus, a structured, electrically conductive seed layer is obtained on defined regions of the outer layer.

In a sulfuric copper electrolytic bath with a Cu sacrificial anode, the patterned seed layer and the aluminum layer are exposed to a periodically varying potential (ie, use of a pulse current with cathodic (negative) and anodic (positive) current pulses). Under cathodic potential, a galvanic deposition of the copper takes place on the seed layer. To a lesser extent, copper crystallites also deposit on the passivated surface of the aluminum outer layer. Under anodic potential, there is to some extent a dissolution of the already deposited copper. However, this primarily concerns the copper deposited on the passivated aluminum surface, while the dissolution of copper in the area of the seed layer does not significantly affect the weight. The amplitude of the cathodic current density is 10A / dm ² . Here, the area for the current density refers to the area of the seed layer. The amplitude of the anodic current density is also 10 A / dm ² , but based on the total area. In order to electrically separate the interconnects from each other after galvanic copper deposition, the plastic plate is wetted with concentrated hydrochloric acid as an etching medium over the entire surface, so that the exposed areas of the

Aluminum layer (i.e., the areas of the aluminum layer not covered by the metal-coated seed layer) are removed by the etching medium. Although a part of the electrodeposited metal is also removed. By applying a correspondingly high layer thickness in the electroplating bath, however, this can be compensated and / or the etching medium HCl is chosen so that the electrodeposited copper layer is far less strongly etched than the aluminum surface.

Example 2 Application of Electrical Circuits on a Silicon Heterojunction Solar Cell (SH J Solar Cell)

The component used is a conventional SHJ solar cell with an edge length of 156 mm x 156 mm. As an integral part, this SHJ solar cell already has an ITO layer on its front side. The ITO layer acts as the outer layer of the component on which the electrical conductors are to be applied. The ITO layer has a sheet resistance of 100 Ω across its entire surface.

A galvanic deposition of copper on ITO at low applied

Voltages less than IV are clearly inhibited. This is possible

explain as follows:

ITO is a highly doped electron conductor, ie the conduction band is partially occupied by electrons, while there are virtually no holes in the valence band. The chemical potential of ITO is about -4.3 eV. The chemical potential of a copper electrolyte is significantly lower (about -5 eV to -6 eV). This results in the transfer of electrons from the ITO surface into the electrolyte when ITO contacts a copper electrolyte. This causes an electrical potential difference between ITO and electrolyte. Because the Charge carrier density in the electrolyte is significantly higher than in ITO, only a small part of the potential in the electrolyte falls on a stretch of a few

Angstrom, while the bulk of the potential in the ITO, depending on the doping on a range of 5-100 nm drops. In the area of the potential drop in the ITO, there are practically no more electrons in the conduction band. Of the

Electron transfer through the ITO surface is thus strongly inhibited.

A silver-particle-containing paste with the pattern of the desired printed conductors is applied to the ITO layer by screen printing. Thus, a structured, electrically conductive seed layer is obtained on defined regions of the ITO outer layer.

The solar cell is now wetted on the front wetted by a galvanic bath with a Kupferelelektrolyten moves while on the back of a metal loop contact. Since in the example chosen the phosphorus doped amorphous

Silicon layer of the SHJ solar cell is located on the front, the solar cell is illuminated through the electrolyte bath, so that the electric current can reach the front of the solar cell with cathodic voltage application on the back.

The solar cells are now subjected to periodic alternating changes for about 5 min for 4 ms cathodically and for 1 ms anodically with voltage. For cathodic application the current is limited to 500 mA, the voltage to 2V, at anodic

Applied to 800 mA and 2V. This is regulated by a corresponding electronics, see FIG. 4.

On the structured seed layer formed by the silver paste, the electrodeposition of the copper takes place. Example 3 Application of Electrical Circuits on a Bifacial Silicon Heterojunction Solar Cell

An SHJ solar cell is used which has an ITO layer on both its front and back surfaces. On both ITO layers, an aluminum outer layer with a thickness of about 20 nm is applied by sputtering.

On this component with an outer layer of aluminum (i.e.

self-passivating metal), a seed layer of nickel in the form of the electroplated grid is applied by laser transfer. Thus, a structured, electrically conductive seed layer is obtained on defined regions of the aluminum outer layer. The structured nickel seed layer is applied to both the front and the back of the device. The SHJ solar cell is now in the areas of the seed layer using

Stainless steel brackets electrically contacted and completely immersed in a sulfuric acid electroplating bath containing a copper salt. The solar cell is then charged periodically for about 5 minutes periodically for 9 ms cathodically and for 1 ms anodic with voltage. With cathodic charging, a current of 800 mA flows when anodic application, a maximum current of 1600 mA and a maximum voltage V + of 10V is specified. This is regulated by the circuit explained above and shown in FIG.

On the structured nickel seed layer, the first is the galvanic

Deposition of the copper. Finally, the pulse parameters are finally adjusted for complete oxidation of the aluminum layer: The amplitude of the andodic current is set to 5 A and the voltage to 10 V. The duration of the pulse is 5 ms. The amplitude of the cathodic voltage is set to 0.9 V and that of the current to 2 A. The duration of the anodic pulse is also 5 ms. With these paremeters, the sample is applied for 10 s in the electrolyte bath. Selective on the nickel seed layer is electrodeposited copper. In the exposed areas, that is not covered by the nickel seed layer, the aluminum outer layer is oxidized to produce alumina, which is transparent due to its small thickness.

Example 4 Production of Galvanic Wires on Silicon Substrates

It is a textured silicon substrate of the layer thickness 180 μιη used. An insulating silicon oxide layer is applied to the silicon surface.

Subsequently, an aluminum outer layer of thickness 1 μιη is vapor-deposited over the entire surface of the silicon oxide layer. This gives a component with an outer layer of self-passivating metal.

In defined areas, the aluminum outer layer is contacted via a sealing stamp with a zincate solution. In these areas it comes to

Formation of a zinc layer. FIG. 6a shows an SEM image of this surface after the formation of the zinc layer. Subsequently, nickel (chemical nickel) is applied to the zinc layer via an electroless electrochemical deposition. The deposition of the chemical nickel takes place selectively on the zinc, but not on the aluminum outer layer. Figure 6b shows a REM

Recording of the surface after electroless deposition of the nickel. Thus, on the aluminum outer layer, a structured seed layer is obtained, which is formed by a zinc layer and a nickel layer deposited on this zinc layer.

The component is brought into contact with a galvanic bath containing a Kupferelelektrolyten. Subsequently, voltage is applied periodically to cathodic and anodic. Copper is electrodeposited on the Zn / Ni seed layer. Figure 6c shows a SEM image of the surface after the electrodeposition of the copper. On the self-passivating aluminum Outside layer, no deposition of copper is visible. Subsequently, the component is brought into contact with a galvanic bath with silver electrolyte and using a pulse current with alternating signs, the galvanic deposition of silver on the copper layer takes place.

Finally, an etch treatment removes the exposed aluminum outer layer exposing the underlying silicon oxide layer. The generated tracks are now electrically isolated from each other. Figure 6d shows a micrograph of the surface after the

final etching step.

On the dielectric silicon oxide layer of the component, therefore, there is a laterally structured coating which has metallic areas (made of aluminum) at defined intervals, which are separated from one another by recesses.

The Zn / Ni seed layer is selective on the aluminum regions, which in turn is completely covered by galvanically deposited copper and silver, ie also on the flanks which bound the layer laterally.

Example 5: Al-Ni-Cu-Ag Printed Circuits on Monocrystalline Silicon Wafer

On a plane monocrystalline silicon wafer is completely a

Aluminum layer vapor-deposited.

By means of screen printing, a zincate-based paste is printed locally, which is applied for 80 seconds and then rinsed off with water. The substrate is then immersed for 180 seconds in a currentless electroless nickel-phosphorus electrolyte having a pH of 4.8. Only the areas coated with nickel-phosphorus, which were previously affected by the zincate-based paste, will be coated. On defined areas of the aluminum outer layer, a seed layer formed from zinc and chemical nickel is thus obtained. Subsequently, the galvanic deposition of copper takes place on this

Germ layer of zinc and chemical nickel. In this case, an acidic copper electrolyte based on copper sulfate with a pH of 2.8 is used. For the deposition, a potential of 1.2 V is applied. On the other hand, the negative potential leads to copper deposition on the nickel-phosphorus areas. Likewise, in the following silver electrodeposition from an alkaline silver electrolyte (pH 10.5), only the copper area is coated and the aluminum areas are protected by the applied potential of 1.1V. Subsequently, an etching step is carried out in a dilute hydrochloric acid solution. The aluminum areas are next to the galvanically applied

Conductors preferably etched. The aluminum etching rate is significantly higher than for substrates with comparable thick aluminum layers. The reason for this is the formation of a local element between aluminum and the electrodeposited Ni / Cu / Ag layer stack, resulting in faster dissolution (corrosion) of the aluminum.

Example 6: Two-sided strip conductors on printed circuit board substrate

Base substrate for this example is a printed circuit board precursor consisting of prepreg material (layer thickness 500 μιη) which is coated on both sides with an aluminum foil (30 μιη). On both sides are defined areas of the

Aluminum outer layer applied by means of laser transfer process thin nickel layers. These are galvanically reinforced in an alkaline pyrophosphate-based copper bath (pH 8.0). After a layer thickness of 5 μιη copper has been deposited, the aluminum is diluted in a

Sodium hydroxide solution is removed from the nickel / copper areas are not attacked. As soon as the aluminum foil has been etched through the entire layer thickness, the Al / Ni / Cu conductor tracks are electrically separated from one another. Example 7:

To the ITO layer of a SHJ solar cell is sputtered a 15 nm thick Ti layer (i.e., a first layer of self-passivating metal) as

Adhesive layer and diffusion barrier applied. On it is also applied by sputtering an 85 nm thick Al layer. This second layer of self-passivating metal represents the outer layer, on which then the structured, electrically conductive seed layer via a non-galvanic

Deposition is applied.

Although the electrodeposition step is performed after the seed layer has been applied, the distribution of current in the electroplating process is improved when at least one of the layers of self-passivating metal is an aluminum layer.

By means of laser transfer, a nickel layer in the form of the desired conductor tracks is applied. This nickel layer represents the structured, electrically conductive

Seed layer on which then takes place the galvanic metal deposition. The nickel layer is thickened with the aid of the pulse plating method described in Example 3 with a Cu conductive layer and an Ag protective layer.

Finally, the Ti / Al layer stack is etched in the region between the interconnects in 1 molar NaOH. For this purpose, a negative voltage of 0.6 V is applied to the workpiece with respect to an auxiliary electrode in the etching bath. By the created

Stress, the etching attack of NaOH is prevented on the interconnects and the ITO layer.

Claims

claims

Method for producing one or more electrical contacts on a component, comprising the following steps:

Providing a component which has a front and a rear side, wherein an outer layer of a transparent, electrically conductive oxide (TCO) or a self-passivating metal or semiconductor is present on the front side and / or the rear side,

Applying a structured, electrically conductive seed layer on defined areas of the outer layer, wherein the application of the

Germ layer is not galvanic,

galvanic deposition of at least one metal on the

Seed layer.

The method of claim 1, wherein the component is an electrical component, in particular a solar cell or a light-emitting diode, or a precursor printed circuit board.

The method of claim 2, wherein the solar cell is a heterojunction solar cell.

A method according to any one of the preceding claims, wherein the TCO is an indium tin oxide (ITO), an aluminum-doped zinc oxide (AZO), a fluorine-doped tin oxide (FTO), a boron-doped zinc oxide or a hydrogen-doped indium oxide; and / or the self-passivating metal is aluminum, titanium, nickel, chromium or zinc or an alloy of one of these metals or the self-passivating semiconductor is silicon.

Method according to one of the preceding claims, wherein the component comprises a TCO layer and one or more additional layers of a Metal or semiconductor between the TCO layer and the

self-passivation outer layer present.

Method according to one of the preceding claims, wherein the component has a TCO layer and the self-passivation outer layer is present directly on the TCO layer.

Method according to one of claims 1-5, wherein the component has a TCO layer and at least two layers of self-passivating metal or semiconductor on the front and / or back of the component and the outer of these self-passivating layers forms the outer layer.

The method of claim 7, wherein the metal or semiconductor of the first self-passivation layer is titanium, nickel, chromium or zinc or an alloy of one of these metals or silicon, and the second

self-passivation layer is an aluminum layer that forms the outer layer.

The method of claim 7, wherein the device comprises at least three layers of self-passivating metal or semiconductor, wherein the metal or semiconductor of the first self-passivating layer is titanium, nickel, chromium or zinc or an alloy of one of these metals or silicon, the second self-passivating layer Aluminum layer is, the third self-passivation layer is present as an outer layer and the metal or the semiconductor of this third self-passivation layer is titanium, nickel, chromium or zinc or an alloy of one of these metals or silicon.

10. The method according to any one of claims 7-9, wherein the first self-passivation layer is present directly on the TCO layer or between the first self-passivation layer and the TCO layer is at least one layer of a non-self-passivating metal.

A method according to any one of the preceding claims, wherein the outer layer of the self-passivating metal or semiconductor is obtained via a physical vapor deposition, a chemical vapor deposition or by attaching a film of the self-passivating metal or semiconductor; and / or wherein the outer layer of the component has a thickness of <25 μιη.

Method according to one of the preceding claims, wherein the application of the seed layer on defined regions of the outer layer via a

Printing process, in particular screen printing, inkjet printing, flexographic printing or aerosol printing, a laser transfer method or an electroless electrochemical deposition takes place.

Method according to one of the preceding claims, wherein the structured seed layer is multi-layered and the application of the structured seed layer comprises the following steps:

Applying an electrically conductive metal layer Sl via a vapor deposition,

Applying an electrically conductive layer S2 on defined regions of the metal layer S1 by a printing method, a laser transfer method or an electroless electrochemical deposition,

Removing the exposed, not covered by the layer S2 areas of the metal layer S 1, preferably by etching or a

electrochemical oxidation.

Method according to one of the preceding claims, wherein the electrically conductive seed layer one or more metals, one or more electrically conductive polymers, one or more electrically conductive

Carbon materials, or a mixture of at least two of these components; and / or wherein the seed layer has a thickness of <20 μιη.

Method according to one of the preceding claims, wherein the electrodeposited metal is copper or a copper alloy, nickel or a nickel alloy or a noble metal such as silver or a silver alloy.

Method according to one of the preceding claims, wherein the electrodeposition of the metal by means of pulse current with cathodic and anodic pulses.

Method according to one of the preceding claims, wherein after the electrodeposition of the metal nor anodization of the self-passivating metal or semiconductor takes place in an anodizing bath.

Method according to one of the preceding claims, wherein after the electrodeposition exposed areas of the outer layer, which are not covered by the structured seed layer, are removed by an etching treatment.

The method of claim 18, wherein the etching treatment takes place in an etching bath and the component is subjected to a negative voltage relative to the etching bath.

20. Device containing

a component with a front and a back, wherein on the front and / or the back of the component a lateral structured coating is present, which has metallic or semiconductive areas of a self-passivating metal or semiconductor at defined intervals,

an electrodeposited metal layer that covers the seed layer.

The device of claim 20, wherein in the laterally structured

Coating between the metallic or semiconducting regions are each oxide regions or recesses, which preferably extend over the entire thickness of the coating.

Apparatus according to claim 21, wherein the surface of the oxide

Sections substantially neither with the electrically conductive seed layer nor with the electrodeposited metal layer is covered.

The device of claim 20 or 21, wherein the device is a SHJ solar cell containing a TCO layer and the laterally structured coating is present on the TCO layer, wherein in the lateral

structured recesses are present between the metallic or semiconductive regions and the recesses extend over the entire thickness of the laterally structured coating, so that the TCO layer is exposed in the regions of the recesses.

24. Device containing

a component having a front and a back, wherein the front and / or the back of the component by a Coating is formed of a transparent conductive oxide (TCO coating),

- An electrodeposited metal layer that covers the seed layer.