EP3509988A4 - Mehrfach dotiertes graphen und verfahren zur herstellung davon - Google Patents

Mehrfach dotiertes graphen und verfahren zur herstellung davon Download PDF

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Publication number
EP3509988A4
EP3509988A4 EP17848944.9A EP17848944A EP3509988A4 EP 3509988 A4 EP3509988 A4 EP 3509988A4 EP 17848944 A EP17848944 A EP 17848944A EP 3509988 A4 EP3509988 A4 EP 3509988A4
Authority
EP
European Patent Office
Prior art keywords
preparing
same
doped graphene
graphene
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17848944.9A
Other languages
English (en)
French (fr)
Other versions
EP3509988B1 (de
EP3509988A1 (de
Inventor
Mynghee JUNG
Jinsan Moon
Nami Byun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of EP3509988A1 publication Critical patent/EP3509988A1/de
Publication of EP3509988A4 publication Critical patent/EP3509988A4/de
Application granted granted Critical
Publication of EP3509988B1 publication Critical patent/EP3509988B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/30—Purity
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Carbon And Carbon Compounds (AREA)
EP17848944.9A 2016-09-07 2017-05-15 Mehrfach dotiertes graphen und verfahren zur herstellung davon Active EP3509988B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160115130A KR102642749B1 (ko) 2016-09-07 2016-09-07 다중 도핑된 그래핀 및 그 제조방법
PCT/KR2017/005006 WO2018048059A1 (en) 2016-09-07 2017-05-15 Multi-doped graphene and method for preparing the same

Publications (3)

Publication Number Publication Date
EP3509988A1 EP3509988A1 (de) 2019-07-17
EP3509988A4 true EP3509988A4 (de) 2020-05-06
EP3509988B1 EP3509988B1 (de) 2023-04-12

Family

ID=61280821

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17848944.9A Active EP3509988B1 (de) 2016-09-07 2017-05-15 Mehrfach dotiertes graphen und verfahren zur herstellung davon

Country Status (5)

Country Link
US (1) US10361275B2 (de)
EP (1) EP3509988B1 (de)
KR (1) KR102642749B1 (de)
CN (1) CN109661369B (de)
WO (1) WO2018048059A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11127509B2 (en) 2016-10-11 2021-09-21 Ultraconductive Copper Company Inc. Graphene-copper composite structure and manufacturing method
US10828869B2 (en) * 2017-08-30 2020-11-10 Ultra Conductive Copper Company, Inc. Graphene-copper structure and manufacturing method
KR102534569B1 (ko) * 2019-12-30 2023-05-22 한국전자통신연구원 셀룰로오스 나노결정 반도체 물질 및 이의 제조방법
CN111410872B (zh) * 2020-04-15 2022-05-31 广东康烯科技有限公司 一种铂量子点掺杂石墨烯基导电油墨的制备方法及导电油墨和应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110127471A1 (en) * 2009-12-02 2011-06-02 Samsung Electronics Co., Ltd. Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene
US20120080086A1 (en) * 2010-10-05 2012-04-05 Samsung Electronics Co., Ltd. Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
US20150162408A1 (en) * 2009-12-30 2015-06-11 Graphene Square Inc. Roll-to-roll doping method of graphene film, and doped graphene film

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102142294A (zh) * 2010-01-29 2011-08-03 海洋王照明科技股份有限公司 石墨烯-离子液体复合材料及其制备方法
WO2011108878A2 (ko) 2010-03-05 2011-09-09 성균관대학교산학협력단 그래핀을 이용한 전자파 차폐 방법 및 전자파 차폐재
KR101802374B1 (ko) * 2010-10-05 2017-11-29 삼성전자주식회사 도핑된 그래핀 함유 투명전극, 그의 제조방법, 및 이를 구비하는 표시소자와 태양전지
KR101469450B1 (ko) * 2011-03-02 2014-12-05 그래핀스퀘어 주식회사 그래핀의 ｎ-도핑 방법
KR102014993B1 (ko) * 2012-10-23 2019-08-27 삼성전자주식회사 소수성 유기물을 함유하는 도핑 그래핀 구조체, 그의 제조방법 및 이를 구비하는 투명전극, 표시소자와 태양전지
CN104409177B (zh) * 2014-11-28 2017-02-22 中国科学院金属研究所 一种稳定掺杂的大面积石墨烯透明导电膜规模化制备方法
CN104528698B (zh) * 2014-12-22 2016-06-08 重庆墨希科技有限公司 一种石墨烯的稳定掺杂方法
CN104528699B (zh) * 2014-12-22 2016-05-11 中国科学院重庆绿色智能技术研究院 一种石墨烯薄膜的稳定掺杂方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110127471A1 (en) * 2009-12-02 2011-06-02 Samsung Electronics Co., Ltd. Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene
US20150162408A1 (en) * 2009-12-30 2015-06-11 Graphene Square Inc. Roll-to-roll doping method of graphene film, and doped graphene film
US20120080086A1 (en) * 2010-10-05 2012-04-05 Samsung Electronics Co., Ltd. Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MA RUGUANG ET AL: "Ionic liquid-assisted synthesis of dual-doped graphene as efficient electrocatalysts for oxygen reduction", CARBON, ELSEVIER, OXFORD, GB, vol. 102, 13 February 2016 (2016-02-13), pages 58 - 65, XP029471635, ISSN: 0008-6223, DOI: 10.1016/J.CARBON.2016.02.034 *
See also references of WO2018048059A1 *

Also Published As

Publication number Publication date
CN109661369A (zh) 2019-04-19
US10361275B2 (en) 2019-07-23
KR20180027899A (ko) 2018-03-15
US20180069082A1 (en) 2018-03-08
KR102642749B1 (ko) 2024-03-04
EP3509988B1 (de) 2023-04-12
EP3509988A1 (de) 2019-07-17
WO2018048059A1 (en) 2018-03-15
CN109661369B (zh) 2022-10-18

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