EP3491673A1 - Dispositif optoelectronique et son procede de fabrication - Google Patents
Dispositif optoelectronique et son procede de fabricationInfo
- Publication number
- EP3491673A1 EP3491673A1 EP17754403.8A EP17754403A EP3491673A1 EP 3491673 A1 EP3491673 A1 EP 3491673A1 EP 17754403 A EP17754403 A EP 17754403A EP 3491673 A1 EP3491673 A1 EP 3491673A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- stack
- optoelectronic device
- layers
- face
- electromagnetic radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3035—Edge emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present application relates to an optoelectronic device and a method of manufacturing such a device.
- Optoelectronic devices are devices adapted to perform the conversion of an electrical signal into an electromagnetic radiation or vice versa, and in particular devices dedicated to the detection, measurement or emission of electromagnetic radiation or devices dedicated to photovoltaic applications.
- FIG. 1 represents, partially and schematically, an optoelectronic device 10 comprising, from bottom to top:
- an electrically conductive layer 14 forming a lower electrode comprising, for example, the stack of a semiconductor layer 18 doped with a first type of conductivity, for example doped N-type, and a semiconductor layer 20 doped with a second type of conductivity, for example doped P-type; and
- the face 24 of the electrode 22 opposite to the active zone 16 is arranged to receive electromagnetic radiation, for example visible light, represented by an arrow 26 in Figure 1.
- the electromagnetic radiation is absorbed in the active area 16 and causes the creation of charge carriers, electrons and holes, which are collected by the electrodes 14, 22.
- charge carriers carried by the electrodes 14, 22 are converted in the active zone 16 into electromagnetic radiation which escapes from the device 10 via the face 24.
- the design of the optoelectronic device 10 can be difficult. Indeed, for photovoltaic applications and applications for detecting or measuring electromagnetic radiation, the electromagnetic radiation 26 passes through the layers forming the device 10 parallel to the stacking direction E of these layers. It would therefore be desirable to increase the thickness of the active zone 16 to increase the portion of the electromagnetic radiation 26 that is absorbed while passing through the active zone 16. However, it is necessary that the charge carriers, electrons and holes, which are created in the active zone 16 pass through the active zone 16 generally in a direction parallel to the stacking direction E to reach one of the electrodes 14, 22. It would then be desirable to reduce the thickness of the active zone 16 to reduce the amount of charge carriers that recombine in the active zone 16 before reaching one of the electrodes 14, 22.
- the two constraints described above are opposite and, during the design of the optoelectronic device 10, a compromise must be found between good absorption of the electromagnetic radiation in the active zone 16 and good collection of charge carriers and this depends on the material constituting the active zone.
- Electrodes 22 must therefore be at least partially transparent to the electromagnetic radiation 26 while ensuring the conduction of the charge carriers created in the active zone 16.
- An object of an embodiment is to overcome all or part of the disadvantages of the optoelectronic devices described above.
- Another object of an embodiment is that the electrodes of the optoelectronic device are not transparent to the electromagnetic radiation emitted or picked up by the optoelectronic device.
- Another object of an embodiment is to increase the portion of the electromagnetic radiation that is absorbed through the active area of the optoelectronic device.
- Another object of an embodiment is to reduce the path of the charge carriers between the electrodes and the heart of the active zone of the optoelectronic device.
- an embodiment provides an optoelectronic device for converting an electrical signal into an electromagnetic radiation or vice versa, comprising an active zone sandwiched between first and second electrodes, the optoelectronic device comprising a stack of layers comprising a lateral edge. and first and second opposing faces, said layers of the stack forming at least the active area and the first and second electrodes, said stack being adapted to receive or emit electromagnetic radiation from the side edge.
- the propagation direction of the electromagnetic radiation in the active zone is perpendicular to the stacking direction of the layers.
- said stack comprises a first portion delimiting a first portion of the first face and a first portion of the second face and a second portion delimiting a second portion of the first face and a second portion of the second face, the first part of the first face being in contact with the second part of the first face or the second part of the second face.
- said stack comprises a succession of folds.
- the pleats are accordion.
- each fold successively comprises a first component in which the layers of the stack are planar, a bent zone in which the layers of the stack are curved and a second component in which the layers of the stack are planar, the second component of one of the folds corresponding to the first component of the next fold of the succession of folds, the bent zones being oriented alternately each side of the optoelectronic device.
- the device further comprises a first electrically conductive plate in contact with the first electrode for first folds among said folds and a second electrically conductive plate in contact with the second electrode for second folds among said different folds of first folds.
- the device further comprises an electrically insulating substrate, the second electrode being sandwiched between the active zone and the substrate, the substrate comprising openings exposing the second electrode.
- the second plate is in contact with the second electrode through the openings.
- the stack is wound in the form of a spiral.
- the optoelectronic device comprises a first electrically conductive element in the center of the spiral and in contact with the first electrode and a second electrically conductive element at the periphery of the spiral and in contact with the second electrode.
- the stack comprises an electrically insulating substrate, the second electrode being interposed between the electrically insulating substrate and the active area.
- the thickness of the active zone is between 0.1 ⁇ m and 100 ⁇ m.
- the active zone is the zone where the majority of the conversion between the electromagnetic radiation and the electrical signal occurs.
- Another embodiment provides a method of manufacturing an optoelectronic conversion device of a electrical signal into electromagnetic radiation or vice versa, the optoelectronic device comprising an active area sandwiched between first and second electrodes, the method comprising forming a stack of layers including a side edge and first and second opposing faces, said layers of the stack forming at least the active area and the first and second electrodes, said stack being adapted to receive or emit electromagnetic radiation from the side edge.
- said stack comprising a first portion delimiting a first portion of the first face and a first portion of the second face and a second portion delimiting a second portion of the first face and a second portion of the second face; face, the first portion of the first face being in contact with the second portion of the first face or the second portion of the second face.
- the method comprises the following steps:
- the method comprises the following steps:
- the method comprises the following steps:
- Figure 1 is a perspective view in section, partial and schematic, of an example of conventional optoelectronic device
- Figures 2 and 3 are perspective views with sectional, partial and schematic views of embodiments of an optoelectronic device
- FIG. 4 is a detailed view of FIG. 2 illustrating the operating principle of an application of the optoelectronic device
- FIGS. 5A to 5C are partial sectional and schematic perspective views of structures obtained at successive stages of an embodiment of a method of manufacturing the optoelectronic device of FIG. 2;
- FIGS. 6A to 6C are partial and schematic sectional perspective views of structures obtained at successive stages of an embodiment of a method of manufacturing the optoelectronic device of FIG. 3;
- FIGS. 7A to 7D are partial and schematic sectional perspective views of structures obtained at successive stages of an embodiment of a method of manufacturing the optoelectronic device of FIG. 2;
- FIG. 8 is a perspective view with partial and schematic sectional view of an embodiment of an optoelectronic system comprising two optoelectronic devices according to FIG. 2;
- Figure 9 is a perspective view, partial and schematic, of another embodiment of an optoelectronic device. detailed description
- control circuits of the optoelectronic devices in particular the current processing circuits provided by photovoltaic cells and the signal processing circuits provided by an electromagnetic radiation detection device, or the power supply circuits of a device for emitting electromagnetic radiation, are well known to those skilled in the art and are not described later.
- FIG. 2 represents an embodiment of an optoelectronic device 30.
- the optoelectronic device 30 comprises a stack 31 of several layers.
- the stack 31 comprises:
- an active zone 34 in which the majority of the electromagnetic radiation / electrical signal conversion is performed and comprising, for example, the stacking of a doped semiconductor layer 36 of a first type of conductivity, for example doped N-type, and a layer semiconductor 38 doped with a second type of conductivity, for example doped P-type; and an electrically conductive layer 40 forming an electrode, the active zone 34 being sandwiched between the substrate 32 and the electrode 40.
- Interface layers may be provided between the active zone 34 and the substrate 32 and / or between the active zone 34 and the electrode layer 40.
- the stack 31 has an accordion structure comprising a succession of accordion folds 42, also called Z folds, extending in a direction of succession of folds.
- Each fold 42 comprises successively a first flap 44, in which the layers of the stack 31 are substantially planar, a bent zone 46 in which the layers of the stack are curved, and a second flap 48 in which the layers of the stack 31 are substantially planar.
- the second flap 48 of a fold corresponds to the first flap 44 of the following fold.
- the bent areas 46 are located alternately on one side and the other of the accordion structure.
- the folds 42 are joined, that is to say that two successive folds 42 are in contact with each other.
- the optoelectronic device 30 comprises two plates
- the two plates 50, 52 electrically conductive.
- the two plates 50, 52 are substantially parallel.
- the stack 31 is sandwiched between the two plates 50, 52, the bent zones 46 being in contact with the plates 50 and 52.
- the plate 50 is in contact with the electrode 40 at the bent zones 46 of the stack 31 oriented on the side of the plate 50 and the plate 52 is in contact with the substrate 32 at the bent areas 46 of the stack 31 oriented on the side of the plate 52.
- the bent areas 46 are alternately oriented towards the the plate 50 and the side of the plate 52.
- the stack 31 comprises a lateral edge 54 which is defined by the lateral edges of the layers of the stack 31 arranged on the same side.
- the face 54 is substantially flat and perpendicular to the plates 50, 52.
- the minimum distance between the two plates 50, 52 is called the width D.
- the length of the stack 31 measured along the direction A of succession of folds is called the length W.
- Depth L is the dimension of the stack 31 measured in a direction perpendicular to the measurement directions of the dimensions D and W.
- the period of plies measured parallel to the dimension W is called P.
- the length W can be between a few millimeters and a few meters, for example between 1 mm and 10 m. The length W does not affect the operation of the optoelectronic device 30.
- FIG. 3 represents an embodiment of an optoelectronic device 60.
- the optoelectronic device 60 comprises all the elements of the optoelectronic device 30 represented in FIG. 2, with the difference that the stack 31 is replaced by a stack 61 which is different. of the stack 31 by the following points:
- the stack 61 comprises an electrically conductive layer 62, forming an electrode, interposed between the substrate 32 and the active zone 34;
- the substrate 32 comprises through openings 64 at the bent zones 46 of the stack 31 located on the side of the plate 52, the electrode layer 62 being in contact with the plate 52 through each opening 64.
- the substrate 32 has a thickness that may be greater than 1 ⁇ m, preferably between 1 ⁇ m and 800 ⁇ m, even more preferably between 1 ⁇ m and 100 ⁇ m.
- the substrate 32 is flexible, that is to say that it can, under the action of an external force, deform, including bending, without breaking or tearing.
- the substrate 32 is electrically conductive and then acts as an electrode.
- the substrate 32 may be metallic.
- the substrate 32 may be conductive composite polymer or conductive plastic.
- the substrate 32 is electrically insulating.
- the substrate 32 is, for example, made of polymer. Examples of polymers are polyethylene naphthalene (PEN), polyethylene terephthalate (PET), kapton, or polyetheretherketone (PEEK).
- the electrode layer 40 may be a conductive oxide, carbon nanotubes, graphene, a conductive polymer, especially consisting of a network of nanotubes or nanowires, a metal or a mixture or an alloy of at least two of these compounds.
- the electrode layer 40 may comprise conductive nanowires or conductive nanoparticles, for example silver nanowires.
- Examples of conductive oxides suitable for producing the electrode layer 40 are indium tin oxide (ITO), fluorine-doped tin oxide (FTO), English Fluor-doped Tin Oxide), aluminum-zinc oxide (AZO) and gallium-zinc oxide (GZO).
- Examples of conductive polymers suitable for producing the electrode layer 40 are polyaniline, also called PAni, and the polymer known under the name PEDOT: PSS, which is a mixture of poly (3,4) -ethylenedioxythiophene and polystyrene sodium sulfonate.
- Examples of metals suitable for producing the electrode layer 40 are silver (Ag), gold (Au), copper (Cu), nickel (Ni), titanium (Ti), chromium
- An example of a multilayer structure suitable for producing the electrode layer 40 is a multilayer structure of AZO and silver of the AZO / Ag / AZO type.
- the electrode layer 40 has a thickness of between 5 nm and 2 ⁇ m. According to one embodiment, the electrode layer 40 is not transparent to the radiation emitted or picked up by the optoelectronic device 30 or 60.
- the electrode layer 62 may have the same composition and the same thickness as the electrode layer 40 or have a different structure.
- the active zone 34 has a thickness which corresponds to the minimum distance separating the substrate 32 from the electrode 40. The thickness can be between 0.05 ⁇ m and 100 ⁇ m.
- the active zone 34 may be based on organic materials, semiconductor materials, in particular amorphous silicon or crystalline silicon, or materials of the 0 0 type.
- the active zone 34 may comprise small molecules, oligomers or polymers. It can be organic or inorganic materials.
- the active zone 34 may comprise an ambipolar semiconductor material, or a mixture of an N-type semiconductor material and a P-type semiconductor material, for example in the form of superposed layers or of an intimate mixture at the nanoscale so to form a hetero j onction in volume.
- P-type semiconductor polymers suitable for producing active zone 34 are poly (3-hexylthiophene) (P3HT), poly [N-9'-heptadecanyl-2,7-carbazole-alt-5,5 (4, 7-di-2-thienyl-2 ', 1', 3'-benzothiadiazole) (PCDTBT), poly [(4,8-bis (2-ethylhexyloxy) benzo [1,2-b] 4, 5-b '] dithiophene) -2,6-diyl-alt- (4- (2-ethylhexanoyl) thie-no [3,4-b] thiophene) -2,6-diyl] ; 4, 5-b '] dithi-ophene) -2,6-diyl-alt- (5,5'-bis (2-thienyl) -4,4-dinonyl-2,2'-bithiazole) 5 ', 5' '-d
- N-type semiconductor materials suitable for carrying out the active zone 34 are fullerenes, especially C60, methyl [6, 6] -phenyl-C8 ] -butanoate ([60] PCBM), [ 6, 6] -phenyl-C 71 -methyl butanoate ([70] PCBM), perylene diimide, zinc oxide (ZnO) or nanocrystals allowing the formation of quantum dots, in English quantum dots.
- the optoelectronic device 30, 60 may further comprise an additional layer between the active zone 34 and the electrode 32 and / or the electrode 40, that plays for example the role of an electron blocking layer or holes.
- FIG. 4 illustrates the operation of the optoelectronic device 30.
- the operation of the optoelectronic device 60 is identical to the operation of the optoelectronic device 30, with the difference that the role of transporting charge carriers played by the substrate 32 for the device 30 is played by the electrode layer 62 for the device 60.
- the optoelectronic device 30 is intended to receive or emit electromagnetic radiation from the lateral edge 54.
- the direction of propagation of the electromagnetic radiation in the case where the optoelectronic device 30 performs the conversion of FIG. electromagnetic radiation as an electrical signal.
- the direction F1 is perpendicular to the stacking direction of the layers of the stack 31 at any point of the stack 31.
- the absorption of the radiation in the active zone 34 causes the generation of electrons and excess holes in the active zone 34 which move to the electrodes 32, 40 for the device 30 and up to the electrodes 40, 62 for the device 60.
- arrows F2 represent the overall direction of propagation of the carriers of the device. fillers created in the active area 34.
- the directions F1 and F2 are substantially perpendicular.
- the direction of propagation of the charge carriers in the active zone 34 coincides with the direction of propagation of electromagnetic radiation in the active zone 34.
- the direction of propagation of the charge carriers in the active zone 34 is different from the direction of propagation of electromagnetic radiation in the active zone 34. There is therefore a decoupling between the direction of propagation of the charge carriers in the active zone 34 and the direction of propagation of electromagnetic radiation in the active zone 34.
- the thickness of the active zone 34 which is to be taken into account for the propagation of the charge carriers in the active zone 34, can be chosen independently of the depth L of the stack 31, which is to be taken into account for the propagation of the electromagnetic radiation in the active zone 34.
- the thickness of the active zone 16 of the device 10 results from a compromise between a thickness sufficient to sufficiently absorb the electromagnetic radiation but not too great to avoid the loss of charge carriers. This compromise does not have to be for device 30 or 60.
- the direction of propagation of the charge carriers in the electrodes 32, 40 is further represented by arrows F3.
- the width D depends in particular on the capacity of the electrode layers 32 and 40 for the device 30, and electrode layers 40, 62 for the device 60, to transport the charge carriers between the active zone 34 and the plates 50, 52.
- the width D can vary from 1 mm to 10 m, for example from a few millimeters to a few meters.
- the direction of propagation of the electromagnetic radiation is opposite to that of the arrow F1
- the direction of propagation of the charge carriers in the active zone 34 is opposed to the direction F2
- the direction of propagation of the charge carriers in the electrodes 32, 40 is opposite the arrow F3.
- the electrodes 32, 40 are made of a reflective material for the electromagnetic radiation created in the active area 34 to focus the emission of the electromagnetic radiation in the same direction.
- the depth L depends on the nature of the materials constituting the active zone 34. In the case where the optoelectronic device 30 converts the electromagnetic radiation into an electrical signal, the depth L is preferably sufficient to allow the substantially complete absorption of the electromagnetic radiation of interest in the active zone 34.
- the material composing the electrodes 32, 40 are materials that diffuse the electromagnetic radiation of interest, which allows advantageously to increase the path traveled by the electromagnetic radiation in the active zone 34 and to reduce the depth L.
- the depth L may vary from 1 ⁇ m to 10 cm, for example from a few micrometers to a few centimeters.
- the value of P depends in particular on the thickness of the substrate 32.
- the dimension P is substantially equal to the sum of twice the thickness of the substrate 32, twice the thickness of the active zone 34 and twice the thickness of the thickness of the electrode layer 40.
- FIGS. 5A to 5C illustrate an embodiment of a method of manufacturing the optoelectronic device 30 shown in FIG.
- FIG. 5A represents the structure obtained after the production of a stack 70 of plane layers intended to form the layers of the stack 31 and designated by the same references.
- the stack 70 thus comprises the same succession of layers as the stack 31 with the difference that the layers of the stack 70 are substantially flat and that the stack 70 has a dimension L 'greater than the depth strictly
- the thickness of the stack corresponds substantially to half of the dimension P described above.
- the layers composing the stack 70 may be deposited, for example, by liquid path, sputtering, evaporation, spin coating, spray coating, heliography, slot-die coating, blade-coating, flexography, screen printing, chemical deposition Vapor phase (or CVD), Atomic Layer Deposition (ALD), Spatial ALD, and Pyrolytic Spray.
- a drying step of the deposited materials may be provided.
- FIG. 5B shows the structure obtained after the folding accordion of the stack 70.
- the active zone 34 may comprise the most mechanically fragile materials.
- the stack 70 shown in FIG. 5A is designed so that the active zone 34 is advantageously located at the plane of neutral fibers. This makes it possible to reduce the mechanical stresses that may appear in the active zone 34 during the folding operation.
- Glue may be disposed on the free faces of the substrate 32 and the electrode layer 40 to maintain the position of the folds 42 after the folding operation.
- FIG. 5C shows the structure obtained after cutting the accordion structure represented in FIG. 5B to obtain the stack 31 having a depth L.
- the method comprises at least one subsequent step of placing the conductive plates 50 and 52 on either side of the stack 31.
- conductive plates may be placed on either side of the stack 70 shown in FIG. 5B before the cutting operation and being cut simultaneously with the stack 70.
- FIGS. 6A to 6C illustrate an embodiment of a method of manufacturing the optoelectronic device 60 shown in FIG. 3.
- FIG. 6A is a figure similar to FIG. 5A and shows the structure obtained after the completion of a stacking 72 planar layers for forming the layers of the stack 61 and designated by the same references.
- the stack 72 thus comprises the same succession of layers as the stack 61 with the difference that the layers of the stack 70 are substantially flat and that the stack 72 has a dimension L 'greater than the desired depth L of the device Optoelectronics 60.
- FIG. 6B shows the structure obtained after the formation of the openings 64 in the substrate 32 over the entire thickness of the substrate 32 to expose portions of the electrode layer 62.
- each opening 64 is extends over the entire depth L 'of the stack 72. Two adjacent openings 64 are spaced approximately twice the dimension D.
- FIG. 6C shows the structure obtained after the folding accordion of the stack 72, so that the openings 64 are, after folding, at bent portions 46 of the accordion structure.
- the method comprises subsequent steps of cutting the accordion structure shown in Fig. 6C to obtain the stack 61 having a depth L and the placement of the conductive plates 50 and 52.
- Figs. 7A to 7D illustrate another embodiment of a method of manufacturing the optoelectronic device 30 shown in Fig. 2.
- FIG. 7A shows a substrate 80, made of an electrically conductive material or a semiconductor, comprising an upper face 82.
- FIG. 7B shows the structure obtained after the formation of openings 84, also called trenches, in the substrate 80 from the upper face 82.
- the openings 84 extend only over a portion of the thickness of the substrate 80.
- the openings 84 correspond to parallel grooves.
- FIG. 7C represents the structure obtained after deposition on the structure represented in FIG. 7B of the layers 36, 38 forming the active zone 34 and of the electrode layer 40.
- these can be deposited for example by sputtering, evaporation, spray coating, CVD, ALD, spatial ALD, and pyrolytic spraying.
- a drying step of the deposited materials may be provided.
- Figure 7D shows the structure obtained after cutting the structure shown in Figure 7C. An accordion structure is then obtained.
- the method may include subsequent steps of placing the conductive plates 50 and 52.
- an arrow 86 represents the direction of propagation of electromagnetic radiation reaching the accordion structure when the optoelectronic device is used for photovoltaic applications or applications for detecting or measuring electromagnetic radiation.
- the optoelectronic device 30 or 60 may be arranged on a support according to the intended application.
- the support is for example a glass or plastic support, flexible or rigid.
- the optoelectronic device can be arranged on a non-planar surface.
- each optoelectronic device may be arranged next to each other on the same face of a support. Each optoelectronic device can then form a pixel of a display system or measurement system.
- FIG. 8 represents an embodiment of an optoelectronic system 90 having a so-called tandem structure adapted to photovoltaic applications and applications for detecting or measuring electromagnetic radiation.
- the optoelectronic system 90 comprises two copies of the optoelectronic device 30 shown in FIG. 2.
- the suffixes "A" and "B" are added to the references of the device 30 shown. in FIG. 2 to differentiate between the two optoelectronic devices 30A and 30B of the optoelectronic system 90.
- the optoelectronic system 90 may comprise two copies of the optoelectronic device 60 shown in FIG. 3.
- the two optoelectronic devices 30A and 30B are arranged in FIG.
- the wavelength range of the electromagnetic radiation absorbed by the active zone of the rear optoelectronic device 30B is at least partly different from the range of wavelengths of the radiation absorbed by the active zone of the optoelectronic device. before 30A.
- part of the electromagnetic radiation 92 reaching the optoelectronic system 90 is absorbed by the active area of the front optoelectronic device 30A and all or part of the electromagnetic radiation that has not been absorbed by the optoelectronic device before 30A is absorbed by the active area of the rear optoelectronic device 30B.
- the plates 50A, 52A of the front optoelectronic device 30A can be connected to the plates 50B, 52B of the rear optoelectronic device 30B so that the two optoelectronic devices 30A, 30B are connected in series or in parallel.
- the optoelectronic system is generally formed by a stack of layers so that the Front and rear optoelectronic devices are connected in series. The current flowing through the optoelectronic system is then imposed by the highest series resistance of the front optoelectronic device or the rear optoelectronic device. This problem is not present with the optoelectronic system 90 in which the electrical connection between the optoelectronic devices 30A, 30B can simply be connected in parallel.
- FIG. 9 is a partial schematic perspective view of an optoelectronic device 95.
- the optoelectronic device 95 comprises the same stack 61 as that of the optoelectronic device 60 shown in FIG. 3, with the difference that the stack 61 is not consistent with folds
- the optoelectronic device 95 comprises an electrically conductive cylindrical element 96 around which the stack 61 is wound, the conductive layer 40 of the stack 61 being in contact with the cylindrical element 96.
- the device Optoelectronics 95 further comprises an electrically conductive element 98 in contact with the conductive layer 62 at the periphery of the winding.
- the substrate 32 of the first portion is interposed between the conductive layer 62 of the first portion and the conductive layer 40 of the second portion and in contact with the conductive layer 62 of the first portion and the conductive layer 40 of the second portion.
- the conductive cylindrical member 96 may not be present.
- the winding can be made around a central cylindrical element which is then removed and contact with the conductive layer 40 is made in the center of the winding.
- the central cylindrical element may further act as a light guide or a mirror reflecting light.
- the optoelectronic device 95 is intended to receive or emit electromagnetic radiation from the side edge of the stack 61.
- the arrow F1 represents the direction of propagation of the electromagnetic radiation in the case where the optoelectronic device 95 converts the electromagnetic radiation into an electrical signal.
- the optoelectronic system 90 shown in FIG. 8 can be implemented with the optoelectronic device 95 shown in FIG. 9.
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1657159A FR3054725B1 (fr) | 2016-07-26 | 2016-07-26 | Dispositif optoelectronique et son procede de fabrication |
PCT/FR2017/052008 WO2018020113A1 (fr) | 2016-07-26 | 2017-07-21 | Dispositif optoelectronique et son procede de fabrication |
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EP3491673A1 true EP3491673A1 (fr) | 2019-06-05 |
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EP17754403.8A Withdrawn EP3491673A1 (fr) | 2016-07-26 | 2017-07-21 | Dispositif optoelectronique et son procede de fabrication |
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US (1) | US10847502B2 (fr) |
EP (1) | EP3491673A1 (fr) |
JP (1) | JP2019525467A (fr) |
FR (1) | FR3054725B1 (fr) |
WO (1) | WO2018020113A1 (fr) |
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US8835937B2 (en) * | 2004-02-20 | 2014-09-16 | Osram Opto Semiconductors Gmbh | Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component |
DE102006034847A1 (de) * | 2006-04-27 | 2007-10-31 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
US9118272B2 (en) * | 2010-09-08 | 2015-08-25 | Momentive Performance Materials Inc. | Light trapping photovoltaic cells |
TWI506801B (zh) | 2011-12-09 | 2015-11-01 | Hon Hai Prec Ind Co Ltd | 太陽能電池組 |
CN103165742B (zh) | 2011-12-16 | 2016-06-08 | 清华大学 | 太阳能电池的制备方法 |
CN103178123B (zh) | 2011-12-22 | 2016-08-10 | 清华大学 | 太阳能电池基座 |
US9876129B2 (en) * | 2012-05-10 | 2018-01-23 | International Business Machines Corporation | Cone-shaped holes for high efficiency thin film solar cells |
-
2016
- 2016-07-26 FR FR1657159A patent/FR3054725B1/fr active Active
-
2017
- 2017-07-21 JP JP2019502555A patent/JP2019525467A/ja active Pending
- 2017-07-21 WO PCT/FR2017/052008 patent/WO2018020113A1/fr unknown
- 2017-07-21 US US16/320,263 patent/US10847502B2/en active Active
- 2017-07-21 EP EP17754403.8A patent/EP3491673A1/fr not_active Withdrawn
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FR3054725B1 (fr) | 2019-05-17 |
JP2019525467A (ja) | 2019-09-05 |
WO2018020113A1 (fr) | 2018-02-01 |
US10847502B2 (en) | 2020-11-24 |
US20190259740A1 (en) | 2019-08-22 |
FR3054725A1 (fr) | 2018-02-02 |
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