EP3443295A1 - Method and system for inspecting and measuring optically a face of an object - Google Patents
Method and system for inspecting and measuring optically a face of an objectInfo
- Publication number
- EP3443295A1 EP3443295A1 EP17719184.8A EP17719184A EP3443295A1 EP 3443295 A1 EP3443295 A1 EP 3443295A1 EP 17719184 A EP17719184 A EP 17719184A EP 3443295 A1 EP3443295 A1 EP 3443295A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- signal
- face
- individual
- measuring
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02083—Interferometers characterised by particular signal processing and presentation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02083—Interferometers characterised by particular signal processing and presentation
- G01B9/02084—Processing in the Fourier or frequency domain when not imaged in the frequency domain
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Definitions
- the present invention relates to a method for inspecting and optically measuring a face of an object, in particular for imaging patterns present on said face. It also relates to a system for inspecting a face of an object implementing such a method.
- the field of the invention is more particularly, but in a nonlimiting manner, that of optical profilometry.
- Optical profilometry makes it possible to inspect a face of an object with a view in particular to detecting and imaging patterns, such as, for example, steps or trenches present on said face.
- An object of the present invention is to provide a method and a system for inspecting and measuring a face of a more accurate object.
- Another object of the present invention is to provide a method and system for inspecting and measuring a face of an object for accurately detecting and imaging narrow patterns without the use of expensive optical means.
- Another object of the present invention is to provide a method and a system for inspecting and measuring a face of an object for accurately detecting and imaging narrow patterns whose characteristic dimensions are of the order or less than the resolution limit of the imaging optical system.
- At least one of these objectives is achieved with a method of inspecting and measuring a face of an object comprising at least two surfaces offset in depth relative to one another, said surfaces forming in particular a step or a trench on or in said face, said method comprising the following steps:
- Such an extraction step is particularly advantageous when the measurement point is at an interface between two adjacent surfaces of different depths.
- the interferometric signal measured comprises, in a mixed manner, information relating to each of the adjacent surfaces.
- the method according to the invention thus proposes to isolate, individually, the information relating to each surface component of the inspected face, by selecting in the measured interferometric signal, the portion of said measured signal corresponding to each surface, before the step profilometric analysis. Once isolated, each individual interferometric signal can be analyzed according to a known profilometry technique.
- the method according to the invention makes it possible to reduce or even cancel the information mixtures relating to two adjacent surfaces of different depths, in particular at the interface of these two surfaces, which makes it possible to carry out a more precise inspection. of a face of an object.
- the method according to the invention makes it possible, with an optical imaging system and a sensor given, to imitate patterns of smaller dimensions, and in particular narrower, compared to the processes of the state of the art.
- the extraction step can be performed by digital or analog processing, and does not impact, or little, signal measurement steps. Consequently, the method according to the invention can be implemented by current inspection or measuring devices without, or with very little architectural modification, in particular of the optical part of these devices.
- the method according to the invention makes it possible to push back the limit of lateral resolution imposed by the optical imaging system and the sensor, by allowing the inspection and the dimensional measurement of patterns of dimensions characteristic of the order or less than this limit of resolution, which could not be inspected or measured by this optical system otherwise.
- the extraction step can be implemented for all measuring points.
- the extraction step can only be implemented for the measurement points, located at an interface between two adjacent surfaces of different depths.
- the step of measuring the interferometric signal can perform a measurement of an interferometric signal for each pixel of a sensor performing a full-field measurement.
- each pixel may correspond to a measurement point for which an interferometric signal is measured.
- the method according to the invention may further comprise a step of constructing, independently, each surface as a function of the profilometric analysis of the individual signals of said surface.
- each measuring point is positioned at the depth detected for said measurement point in the individual interferometric signal relating to said measuring point.
- the method according to the invention may further comprise a step of constructing a representation of the inspected face, and in particular a three-dimensional representation of said face, comprising the patterns lying on said inspected face.
- Such a construction in particular three-dimensional, can be achieved by concatenation of the depth values measured in each individual signal at each measurement point, and this for all surfaces.
- such a construction can be achieved by concatenation of the measurement points, at the depths detected in the individual interferometric signals for all the surfaces.
- the step of constructing a representation of the inspected face can be made from the individual representations of the surfaces.
- the construction step may comprise, for at least one measurement point, an iteration of the following steps:
- these steps can be performed for at least one, in particular each, measurement point assigned to two adjacent surfaces of different depths.
- the individual representations considered are those of said adjacent surfaces.
- the method according to the invention makes it possible to determine with greater precision, a three-dimensional representation of the inspected face.
- the method according to the invention makes it possible to avoid such double assignment, by discriminating based on the quality of the signal obtained for each of the adjacent surfaces, and to assign the measuring point to only one of the adjacent surfaces.
- the allocation step may be performed by a predetermined comparison relation taking into account:
- the method according to the invention makes it possible to assign a measuring point to a surface when, for said measuring point, the quality of the signal in the individual representation of one of the surfaces is greater, possibly of a multiplying coefficient, to the value of the signal quality in the individual representation of the other surfaces.
- the multiplying coefficient can be determined empirically or experimentally.
- the multiplying coefficient can be determined by learning, for example from reference measurements on objects of known characteristics.
- the multiplier coefficient may be a function of at least one parameter of a measurement sensor used during the measuring step.
- a parameter of the measurement sensor may for example be a sensitivity of the sensor or a measurement uncertainty value of said sensor, for example given by the manufacturer or measured during prior tests.
- the multiplying coefficient can be determined according to at least one parameter of the inspected face.
- a parameter of the inspected face may for example be a reflection / refraction value of the material used, a theoretical difference in depth value between two adjacent surfaces, a characteristic dimension of the pattern, etc.
- the profilometric analysis step can comprise for each individual signal:
- phase of the Fourier transform of the single interferometric signal of a single surface is linear, and the analysis of this phase makes it possible to accurately deduce a topographic information.
- this simple method does not work with a interferometric signal which comprises a mixture of information relating to two or more adjacent surfaces, because in this case the phase of the Fourier transform of the interferometric signal measured does not exhibit such linearity.
- the step of extracting a signal measured relative to said surface may comprise a selection of a portion of said measured interferometric signal comprising an envelope corresponding to said surface. in said measured interferometric signal.
- This envelope may correspond to a local amplitude of fringes or significant interference signals.
- the selection step may advantageously perform a cutting of the interferometric signal measured in two portions each comprising an envelope corresponding to one of said surfaces in said measured signal, the individual signal for each surface corresponding to one of said portions.
- the cutting can be performed by considering the adjacent envelopes in the signal measured in pairs.
- the cutting of the measured signal, for two adjacent envelopes can be performed at a position of said measured signal:
- the positions of the envelopes may for example correspond to their respective vertices. For example, if the envelopes corresponding to two adjacent surfaces are separated, in the measured interferometric signal, by a distance of depth ⁇ , then the measured interferometric signal is split in two at a position between the two envelopes at a distance of distance ⁇ / 2 of the position of each envelope.
- the depth of each surface, and therefore the position of each envelope in the interferometric signal measured can be previously indicated, in particular in an approximate or theoretical manner, prior to the inspection, for example by a designer or a manufacturer. of the object whose face is inspected.
- the depth of at least one surface of the inspected face may be indicated relative to another surface of said face.
- the method according to the invention may comprise a step of estimating the position, in the measured interferometric signal, of at least one envelope corresponding to a surface, prior to the extraction step.
- Such a step of estimating the position of an envelope can be performed in different ways, by analyzing the interferometric signal measured.
- the step of estimating the position of an envelope in the measured interferometric signal may comprise a step of:
- the position of an envelope in the measured signal can be detected by detecting the position of a local maximum of the energy of the measured interferometric signal.
- the position of an envelope in the measured signal can be detected by applying a low-pass filter to the rectified signal.
- This low pass filter makes it possible to eliminate the high frequency component of the rectified signal, that is to say the fringes, by keeping the low frequency component, ie the signal envelope.
- the rectified signal can be obtained for example with an absolute value operator, a thresholding at the average value, a squared elevation, or a multiplication by a carrier of the same frequency (synchronous demodulation).
- the position of an envelope in the measured signal can be detected by searching for the amplitude and / or the peaks of the interference fringes, for example with comparison operators or by derivation.
- a system for inspecting and measuring a face of an object comprising at least two surfaces offset in depth relative to one another, said surfaces forming particularly a step or trench on or in said face, said system comprising:
- a module for processing the measured interferometric signals configured to implement all the steps of the method according to the invention.
- the configuration of the processing module can be carried out electronically and / or informally, in particular with instructions executable by a processor or an electronic chip, of the EEPROM type for example.
- the processing module may be integrated with the measuring device, or external to the measuring device and connected to said measuring device in a wired or wireless manner.
- the measuring device may comprise a full-field interferometric sensor.
- a measuring point may correspond to a pixel of said sensor.
- the method and the system according to the invention can each be used for the inspection of a face of a semiconductor element or a wafer, in particular for the measurement of the depth (s) of sliced (s) and / or height (s) of walking (s) present (s) on said face, or to image said face.
- the method and system according to the invention can each be used for inspecting a face of an object, in particular for the detection and / or characterization and / or imaging of at least one object. pattern of said face.
- FIG. 1 is a schematic representation of an exemplary non-limiting embodiment of a method according to the invention
- FIGS. 2a-2h are diagrammatic representations of an example of non-limiting inspection and measurement of a face of an object such as a wafer with the present invention, and in particular with the method of FIG. 1 ;
- FIG. 3 is a schematic representation of a nonlimiting exemplary embodiment of a system according to the invention.
- FIGURE 1 is a schematic representation of a non-limiting embodiment of a method according to the invention.
- the method 100 comprises a step 102 for measuring an interferometric signal at several measurement points on one face of an object, for example using a full-field interferometric sensor.
- each pixel of the sensor corresponds to a measurement point, and an interferometric signal is measured by each pixel of said sensor.
- the method 100 further comprises a processing phase 104, performed for each measurement point, that is to say for each measured interferometric signal.
- the processing phase 104 comprises a step 106 realizing an estimation of the position of each envelope in the measured interferometric signal.
- This estimation step 106 is performed by demodulating the interferometric signal measured by applying a low-pass filter on the rectified signal after subtraction of the background (or by performing a synchronous demodulation).
- the background is calculated by smoothing the signal with a sufficiently wide sliding averaging window.
- the low pass filter makes it possible to eliminate the high frequency components of the rectified signal while maintaining the low frequency component, that is to say the envelope.
- the local maxima of the demodulated signal that exceed a predetermined amplitude threshold are detected and their position memorized.
- the amplitude threshold can be chosen, for example, to find a good compromise between a number of false detections and a number of non-detection of envelopes, the challenge being to detect weak signals without the noise in the interferometric signals. does not involve too many false detections.
- This detection threshold can be fixed or adaptive depending, for example:
- a criterion related to the amplitude of the demodulated signal (peak value, rms value) over the entire signal or in a neighborhood; and or - a criterion related to a measurement of the noise of the interferometric signal measured.
- the interferometric signal is then processed, during a step 108, considering that each envelope detected during step 106 corresponds to a different depth surface.
- the processing consists in cutting the interferometric signal in as many portions as there are envelopes in said measured interferometric signal. Cutting of the interferometric signal is performed between the adjacent envelopes, taken in pairs, at a position substantially equidistant from the position of each of said two adjacent envelopes.
- the interferometric signal comprises N envelopes E k , with l ⁇ k ⁇ N and D k the position of the envelope k in said measured interferometric signal
- a first portion Pi comprising the envelope Ei is first cut into a cutting position DDi located between the positions Di and D 2 , and equidistant from the positions Di and D 2 .
- a second portion P 2 comprising the envelope E 2 is cut: this second portion corresponds to the portion of the interferometric signal measured between the first cutting position DDi and a second cutting position DD 2 lying between the positions D 2 and D 3 , equidistant from the positions D 2 and D 3 , and so on.
- the last portion P N corresponds to the portion of the interferometric signal measured between the penultimate cut position DD N- i and the end of the measured interferometric signal.
- the measured interferometric signal comprises only two envelopes E 1 and E 2 , then it is cut into two portions at a cutting position DD 1 located between the positions D 1 and D 2 and equidistant from the positions D 1 and D 2 .
- the first portion Pi comprises the beginning of the measured signal up to the cutting position DDi and the second portion P 2 comprises the end of the signal measured from the cutting position DDi.
- Each portion obtained during the cutting step forms an individual signal for each surface of the inspected face.
- a profilometric analysis of each individual signal is performed to detect the position of the surface to which corresponds the single envelope contained in the individual signal.
- each individual signal undergoes:
- the frequency domain where the phase of the Fourier transform is linear corresponds to the frequency domain of the light source of the profilometer.
- the depth of the surface at the corresponding measurement point can be deduced from the slope of the phase in this frequency range or from the value of the phase at the center frequency of the profilometer light source.
- the processing phase 104 ends in step 110.
- a step 112 depending on the profilometric analysis of the individual signals, an individual construction of each surface of a given depth is performed by concatenation of the measurement points detected at said depth.
- a three-dimensional representation of the inspected face is performed.
- a step 116 performs a concatenation / merger of the individual representations obtained during the step 112, for all the measurement points.
- a step 118 determines the quality Qi (i, j) and Q 2 (i, j) of the corresponding individual measurement signal. at the surface 1, respectively at the surface 2.
- This quality measurement is obtained from the maxima recorded on the demodulated signal during the interface / envelope detection step (step 106). It corresponds for example to the maximum amplitude of the envelope of the surface considered.
- a step 120 performs an allocation of said contentious measurement point to one of the two surfaces by comparing the qualities Qi (iJ) and Q 2 (i, j). For example :
- a weighting factor, or multiplier ⁇ is applied to the quality measures to perform the comparison.
- a graphical representation of the inspected face is performed.
- the method 100 may further include study and statistical steps regarding widths, heights, pattern depths, such as steps or trenches.
- FIGURES 2a-2g give schematic representations of an example of a face inspected according to the method according to the invention, such as for example the method 100 of FIGU RE 1.
- the face 200 shown in FIGU RE 2a, is a face of a semiconductor comprising steps 202 and trenches 204.
- FIGURE 2b is an example of a measured interference signal, for example at step 102 of method 100 of FIGURE 1, at a point 206 at the interface between a step 202 and a trench 204.
- the x-axis is the depth
- the y-axis is the intensity value scale of the camera (the grayscale of the camera).
- the measured interference signal 208 shown in FIGURE 2b, comprises two envelopes: the envelope 210i corresponds to a step 202 and the envelope 210 2 corresponds to a trench 204.
- FIGURE 2c is an example of two individual signals obtained, for example in step 108 of the method 100 of FIGURE 1, after cutting the signal 208 into a clipping position 212, located between the envelopes 210i and 210 2 , and equidistant positions of said envelopes 210i and 210 2 .
- the individual signals 214i and 214 2 respectively comprise the envelope 210i and the envelope 210 2 .
- FIGURE 2d is an example of two signals 216i and 216 2 representing the phase of the Fourier transform, respectively individual signals 214i and 214 2 of FIGURE 2c, obtained for example in step 110 of method 100 of FIGURE 1
- each signal 216i and 216 2 has an area, respectively 218i and 218 2 , where the phase is substantially linear.
- Each linear zone 218i and 218 2 makes it possible to calculate the depth of the corresponding surface, namely, respectively of the step 202 or the trench 204, for the measuring point 206.
- FIG. 2d also gives an example of a signal 216 3 representing the phase of the Fourier transform of the measured interference signal 208. It can be seen that in this case the phase does not comprise a linear zone making it easy to deduce a depth information.
- FIGURE 2e is an example of an individual representation of each of the surfaces, namely a representation 218i of the surface formed by the steps 202 and a representation 218 2 of the surface formed by the trenches 204 and by the surface on the outside of the pattern , as obtained for example in step 112 of method 100 of FIGURE 1.
- certain measurement points have been attributed to both the surface formed by the steps 202 and that formed by the trenches 204.
- the measuring points for the trenches 204 located between the steps 202 have been assigned to each surface, since the representation 218i shows a continuous surface between the steps.
- FIGURE 2f is an example of a flat representation
- FIGURE 2g is a three-dimensional representation of the inspected face 200, obtained for example in step 122 of method 100 of FIGURE 1, after managing the points at issue in step 120.
- FIGURE 2g illustrates the accuracy of the depth measurements obtained at each measurement point.
- FIGURE 2h gives a statistical study in the form of a histogram covering all the measurement points, and the depth of these measurement points. In particular, it allows you to see the depth distribution:
- FIGURE 3 is a schematic representation of a non-limiting embodiment of a system according to the invention.
- the system 300 shown in FIG. 3, comprises a light source 302, for example based on light-emitting diodes or a halogen source, which generates an illumination beam 304 in visible and / or near-infrared wavelengths.
- This illumination beam 304 is directed towards a full-field interferometer 306 by a cube or a splitter blade
- the illumination beam 304 is separated into a reference beam which illuminates a reference mirror and a measurement beam which illuminates an area to be inspected, for example the surface 200 of FIGURE 2a.
- the light reflected respectively by the surface 200 and the reference mirror is redirected to a matrix detector 310, for example of the CCD or CMOS type.
- the system 300 includes optics and lenses, including an imaging lens, arranged to image the surface 200 on the detector When the difference in optical paths between the measurement beam and the reference beam is smaller than the coherence length of the light source 302, interference fringes due to interference between the measurement beam and the beam of light reference are also visible.
- the system 300 further comprises a module 312 electronic / computer, such as a processor or an electronic chip or a personal computer for example, connected to the matrix detector 310, and configured to implement all the steps of the method according to the invention, such as for example the steps 104-122 of method 100 of FIGU RE 1.
- a module 312 electronic / computer such as a processor or an electronic chip or a personal computer for example, connected to the matrix detector 310, and configured to implement all the steps of the method according to the invention, such as for example the steps 104-122 of method 100 of FIGU RE 1.
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1653158A FR3050023B1 (en) | 2016-04-11 | 2016-04-11 | METHOD AND SYSTEM FOR OPTICAL INSPECTION AND MEASUREMENT OF A FACE OF AN OBJECT |
PCT/EP2017/058145 WO2017178306A1 (en) | 2016-04-11 | 2017-04-05 | Method and system for inspecting and measuring optically a face of an object |
Publications (1)
Publication Number | Publication Date |
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EP3443295A1 true EP3443295A1 (en) | 2019-02-20 |
Family
ID=56322099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP17719184.8A Withdrawn EP3443295A1 (en) | 2016-04-11 | 2017-04-05 | Method and system for inspecting and measuring optically a face of an object |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190137265A1 (en) |
EP (1) | EP3443295A1 (en) |
KR (1) | KR20180127412A (en) |
CN (1) | CN109073355A (en) |
FR (1) | FR3050023B1 (en) |
WO (1) | WO2017178306A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3089286B1 (en) * | 2018-11-30 | 2022-04-01 | Unity Semiconductor | Method and system for measuring a surface of an object comprising different structures by low coherence interferometry |
WO2020215050A1 (en) | 2019-04-19 | 2020-10-22 | Arizona Board Of Regents On Behalf Of The University Of Arizona | All-in-focus imager and associated method |
WO2020215046A1 (en) * | 2019-04-19 | 2020-10-22 | Arizona Board Of Regents On Behalf Of The University Of Arizona | On-chip signal processing method and pixel-array sensor |
CN110160450B (en) * | 2019-05-13 | 2020-12-25 | 天津大学 | Method for rapidly measuring height of large step based on white light interference spectrum |
WO2020245511A1 (en) * | 2019-06-07 | 2020-12-10 | Fogale Nanotech | Device and method for measuring interfaces of an optical element |
WO2021168613A1 (en) | 2020-02-24 | 2021-09-02 | Yangtze Memory Technologies Co., Ltd. | Systems and methods for semiconductor chip surface topography metrology |
WO2021168610A1 (en) | 2020-02-24 | 2021-09-02 | Yangtze Memory Technologies Co., Ltd. | Systems having light source with extended spectrum for semiconductor chip surface topography metrology |
CN111356897B (en) * | 2020-02-24 | 2021-02-19 | 长江存储科技有限责任公司 | System and method for semiconductor chip surface topography metrology |
WO2021168612A1 (en) | 2020-02-24 | 2021-09-02 | Yangtze Memory Technologies Co., Ltd. | Systems and methods for semiconductor chip surface topography metrology |
CN113465534B (en) * | 2021-06-25 | 2022-04-19 | 浙江大学 | Micro-nano deep groove structure rapid measurement method based on white light interference |
CN114383528A (en) * | 2022-01-10 | 2022-04-22 | 湖南伊鸿健康科技有限公司 | Counting pool depth calibration method and system, intelligent terminal and storage medium |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5471303A (en) * | 1994-04-29 | 1995-11-28 | Wyko Corporation | Combination of white-light scanning and phase-shifting interferometry for surface profile measurements |
JP2000097648A (en) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | Device and method for measuring difference in level |
JP2003065724A (en) * | 2001-08-29 | 2003-03-05 | Shin Etsu Handotai Co Ltd | Method for measuring thickness of film using ftir method, and method for manufacturing semiconductor wafer |
CN100587394C (en) * | 2007-09-20 | 2010-02-03 | 华中科技大学 | Method and device for measuring micro-nano deep groove structure |
US8004688B2 (en) * | 2008-11-26 | 2011-08-23 | Zygo Corporation | Scan error correction in low coherence scanning interferometry |
-
2016
- 2016-04-11 FR FR1653158A patent/FR3050023B1/en active Active
-
2017
- 2017-04-05 CN CN201780022856.0A patent/CN109073355A/en active Pending
- 2017-04-05 EP EP17719184.8A patent/EP3443295A1/en not_active Withdrawn
- 2017-04-05 WO PCT/EP2017/058145 patent/WO2017178306A1/en active Application Filing
- 2017-04-05 US US16/092,751 patent/US20190137265A1/en not_active Abandoned
- 2017-04-05 KR KR1020187029944A patent/KR20180127412A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2017178306A1 (en) | 2017-10-19 |
FR3050023A1 (en) | 2017-10-13 |
CN109073355A (en) | 2018-12-21 |
KR20180127412A (en) | 2018-11-28 |
FR3050023B1 (en) | 2020-02-14 |
US20190137265A1 (en) | 2019-05-09 |
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