EP3381052A1 - Electrical component with thin solder resist layer and method for the production thereof - Google Patents

Electrical component with thin solder resist layer and method for the production thereof

Info

Publication number
EP3381052A1
EP3381052A1 EP16762778.5A EP16762778A EP3381052A1 EP 3381052 A1 EP3381052 A1 EP 3381052A1 EP 16762778 A EP16762778 A EP 16762778A EP 3381052 A1 EP3381052 A1 EP 3381052A1
Authority
EP
European Patent Office
Prior art keywords
carrier
stop layer
contact surface
lss
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16762778.5A
Other languages
German (de)
French (fr)
Inventor
Alexander Schmajew
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SnapTrack Inc
Original Assignee
SnapTrack Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SnapTrack Inc filed Critical SnapTrack Inc
Publication of EP3381052A1 publication Critical patent/EP3381052A1/en
Withdrawn legal-status Critical Current

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Classifications

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    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/384—Bump effects
    • H01L2924/3841—Solder bridging

Definitions

  • SMT Surface Mounted Technology
  • solderable bumps are used for electrical interconnection and mechanical connection between a carrier, e.g. B. a circuit board, and an electrical component, for. B. discrete components or modules used.
  • the material of the bumps is in one step, z.
  • solder paste may contain flux that attack the surface of the carrier when heated. Furthermore, there is a risk that solder paste gets to solderable surfaces that should remain free of solder, z. B. to avoid electrical short circuits.
  • a protective layer eg. B. a solder stop layer, are covered.
  • solder stop layer The problem with the use of a solder stop layer is the increased complexity in the manufacture of the components, since the solder stop layer must be structured so that in an optimal case, all sensitive areas, but not actually to be provided with Lot areas are covered by the protective layer. It also holds that electrical Components should have ever smaller dimensions. Conventional solder-stop layers are already so thick compared to current dimensions of bump connections that further problems can occur in further steps to encapsulate the devices. Many components are encapsulated and mechanically stabilized by pouring a mold over the top and then hardening the mass. The problem now is that the mold mass no longer sufficiently filled gaps between the component and the carrier when the gap is too low due to the thickness of the solder stop layer.
  • a protective layer should there ⁇ at a good adhesion on the surface of the carrier aufwei ⁇ sen, high temperatures, eg. B. greater than 250 ° C in a reflow process, without enduring degradation, be mechanically stable, chemically neutral and passive and do not conduct the electric current.
  • the protective layer should be as thin as possible.
  • the electrical component comprises a carrier having an upper side, a metallized contact surface on the upper side and a solder stop layer covering a part of the upper side, but not the contact surface.
  • the solder stop layer has a thickness of 200 nm or less.
  • solder-stop layer has a thickness which Kgs ⁇ NEN even at the currently small dimensions of bump connections, thus gaps are still reliably filled small distances between the carrier and electrical component.
  • the carrier can be a printed circuit board or a chip.
  • the metallized contact surface is preferably a solderable metallized surface which is intended to be over a
  • the metallized Kon ⁇ clock face may in particular be a so-called under- bump metallization, and in turn have a multilayer structure.
  • solder-stop layer has a thickness Zvi ⁇ rule 30 nm and 80 nm.
  • the device has a bump ball on the metallized contact surface.
  • the bump ball on the metallized contact surface may then consist of a solder material that has been applied to the area of the metallized contact area by a stencil printing method. In a subsequent heating, the material melts and forms due to the Oberflä ⁇ chenschreib to form a relatively small surface, a ball.
  • the metallized contact surface can with a further metallization on the top of the carrier, z. B. a signal line in the form of a stripline connected.
  • a further metallization can be arranged on the upper side of the carrier.
  • the two further metallizations next to the contact surface on the upper side of the carrier are covered by the solder stop layer.
  • the solder stop layer may have poor solder wettability. Then, when heated, solder material automatically centers away from the region of poor wettability toward the metallized contact surface which is free of the material of the solder stop layer.
  • the solder material and / or flux thereby engage emp ⁇ -sensitive areas on the upper side of the support not. Even if electrically conductive solder material remains on a Be ⁇ rich next to the contact surface, the solder stop layer acts as an electrical insulator and signal lines are not short-circuited.
  • the component additionally comprises an electrical component.
  • the electrical component may have a contact surface at the bottom.
  • the Bauele ⁇ ment then further comprises a bump connection that connects the two contact surfaces.
  • the carrier may have a plurality of further metallized contact surfaces on its surface.
  • the device may also have a variety of different electrical components, which are connected and interconnected via bump connections with the metallized contact surfaces of the carrier, wherein each of the electrical compo ⁇ nents in turn have metallized contact surfaces on their lower sides.
  • the electrical component or the electrical plurality ⁇ shear components may also each have a solder-stop layer on their undersides.
  • the solder-stop layers of the electrical components can be conventional protective layers. They may also be solder stop layers of the type of protective layer present.
  • the component when two protective layers are arranged between a component and the carrier, the advantage of the small thicknesses of the present protective layers comes into play, since the effect on the height of the free gap doubles. Accordingly, it is possible for the component to comprise a molding compound which covers at least parts of the top side of the carrier and at least one electrical component.
  • the mold mass also fills the intermediate space between the electrical component and the carrier or between all electrical components and the carrier.
  • a hermetically sealed volume between the component and the carrier remains free of the material of the mold mass.
  • an additional frame structure can be arranged between the component and the carrier, which surrounds the cavity since ⁇ Lich. The cavity is then formed by the surfaces of the carrier and the component and by the frame.
  • the component prefferably has a first signal line connected to the contact surface on the upper side of the contact surface
  • Carrier comprises.
  • the device further has a second Sig ⁇ naltechnisch at the top of the carrier.
  • Both signal lines are at least partially be ⁇ covered by the solder-stop layer.
  • the electrical resistance between the two signal lines is 100 ⁇ or more.
  • the lateral distance between the signal lines can be of the order of 180 ym.
  • the solder-stop layer has a thickness, which - is selected such that a minimum resistance of 100 ⁇ réellege ⁇ represents is - depending on the material of the layer.
  • solder stop layer is silicon as
  • Main component comprises or consists entirely of silicon.
  • solder-stop layers of silicon or other material with similar electrical isolation properties can be made surprisingly easily using the method described below.
  • all materials for the solder stop layer can be used that sufficiently provides a reasonable ⁇ accordingly low wettability by solder and a have low electrical conductivity. Is preferred that the materials with the usual Swisssme ⁇ methods such. As the semiconductor industry, can be deposited and adhere well to the top of the carrier.
  • the solder stop layer can also include germanium as a main ingredient ⁇ part or consist of germanium.
  • the solder stop layer can in principle consist of all dielectric materials. However, preference is given to those which can be deposited relatively easily as a correspondingly thin layer. These include in particular the materials that can be applied to surfaces in reactive or non-reactive PVD processes, for. For example, oxides and nitrides of silicon, titanium, aluminum or chromium.
  • the component may have component structures on the upper side of the carrier or on the underside of at least one electrical component.
  • the device structures may have a height of 40 ym or more.
  • the component structures may be SAW component structures, BAW component structures, MEMS (micro-electro-mechanical system) device structures or GBAW devices.
  • similar component ⁇ structures be.
  • the carrier has on its upper side or the electrical component on its underside a com ⁇ plex topology, which are poor or not covered by conventional solder stop layers.
  • the other solderable metal surfaces to be protected by the solder stop layer may be nickel, copper, Alloys of these two elements or alloys with these two elements, gold, silver, palladium, rhodium, tin, and / or zinc have.
  • the number of contact surfaces, the electrical components and the contact surfaces of the electrical components is not limited in principle, especially in electrical components with integrated circuits, the electrical component and the carrier can be interconnected and connected over many hundreds of bump connections.
  • the carrier is not limited to printed circuit boards.
  • the carrier itself can an electrical component, which is arranged on ei ⁇ nem further carrier or a further electrical component, etc., and connected to be.
  • a method for producing such an electrical component comprises the steps of: providing a carrier with an upper side and a metallized contact surface on the upper side,
  • the lacquer layer may comprise a conventional material for photolithography processes and z. B. be applied by spin coating. After application of the material of the solder stop layer on the remaining portions of the structured varnish layer and on the vacant surfaces of the carrier, the material of the photoresist can be removed by stripping ⁇ ent. As a result, the structured solder stop layer in the form of the desired solder stop mask is produced without additional structuring of the material of the solder stop layer. This method reduces the complexity of the overall ⁇ process and the cost of manufacturing the device when compared with conventional methods.
  • solder stop layer It is possible for the solder stop layer to have a thickness that is 200 nm or less.
  • solder stop layer it is possible for the solder stop layer to have a thickness which is between 20 nm and 80 nm. It is possible that the formed during the process
  • Lot stop layer comprises silicon or germanium as the main constituent ⁇ part or is completely made of silicon or germanium be ⁇ .
  • Other materials with similar electrical properties and similar wettability are also possible.
  • the electrical component has another solderable metal surface on the upper side and the solder stop layer is deposited directly onto the further solderable metal surface.
  • the more solderable metal surface can be a metal surface ⁇ a signal line or a realized at the top of the carrier capacitive, inductive or re- sistiven element.
  • the method comprises the steps
  • Arranging solder paste at least on the contact surface, arranging an electrical component with a contact surface on its underside on the upper side of the carrier, reflowing the component and connecting the two contact surfaces by means of a bump connection,
  • the method comprises the step of enveloping the electrical component with a mold mass.
  • the mold mass also fills the area between the component and the carrier.
  • the lacquer which is patterned prior to the application of the material of the solder-stop layer to form the solder-stop mask to preserver ⁇ th may ⁇ a thickness between 0.5 and 10 ⁇ , z. B. between ⁇ 2 ym and 4 ym, and have a standard paint semiconductor manufacturing be.
  • the paint can be sprayed next to the spin on the top of the carrier who ⁇ .
  • Fig. 1 a cross section through an electrical compo ⁇ ment
  • Fig. 2 a cross section through a device with further
  • FIG. 3 shows a cross section through a component with a
  • Fig. 7 a fourth intermediate step
  • Fig. 8 a first intermediate result in the production of egg ⁇ nes complex electrical component
  • FIG. 9 shows a further intermediate step
  • FIG. 10 shows a further intermediate step after heating
  • FIG. 11 shows a cross section through a simple execution ⁇ form of the device
  • Fig. 12 shows a cross section through an alternative exporting ⁇ approximate shape
  • Fig. 13 shows a cross section through a component with a thin
  • Lot stop layer and a mold mass that fills the gaps between the electrical component and the carrier are listed.
  • FIG. 1 shows a cross section through a simple Ausure ⁇ tion form of the electrical component EB.
  • the electrical component EB has a carrier TR, on which a metallized contact surface MK is structured.
  • the metallized contact surface ⁇ MK is intended to be connected via a bump connection to an electrical component.
  • a solder stop layer LSS is arranged on ⁇ which covers those areas of the top of the carrier TR, which should not come into direct contact with solder material.
  • the metallized contact surface may be a so-called under-bump metallization UBM and have a good wettable surface.
  • Figure 2 shows a cross section through a shape of a
  • solder stop layer LSS reliably protects sensitive areas on the top side of the carrier TR against wetting with solder, if the top side of the carrier TR is sufficiently flat. If the component is to be encapsulated by a mold mass MM, provides a thick solder-stop layer LSS of all ⁇ recently an obstacle, that the filling of the gap Z between the bottom of the electrical component EK, the via bump connections BU connected to the carrier TR and is connected, and the carrier TR fills.
  • Figure 3 shows a cross section through an electric element construction, in which a bump ball BU has already formed on the con tact surface ⁇ MK. Due to the surface tension of the solder, a ball-like structure at the pres ⁇ fen a reflow process formed. Compared with the height of the bump ball or the subsequent bump connection to an electrical component, the thickness of the solder stop layer LSS is very small.
  • solderable surface LO On the surface of the support is a material with solderable surface LO, z. B. a signal line SL, which may include nickel, Kup ⁇ fer, gold or silver arranged.
  • solder stop layer LSS there is a risk that the material of the bump ball BU does not collect on the contact surface MK, but attacks the signal conductor and optionally short-circuits the Sig ⁇ nalleiter and another circuit element at the top of the carrier.
  • Figure 4 shows a cross section through a first stinkpro ⁇ domestic product in the production of the electrical component.
  • the contact surface MK and the signal conductor SL are arranged as an example of elements to be protected on the upper side of the carrier TR.
  • FIG. 5 shows a cross section through a further intermediate step, in which the entire surface, including the regions to be protected and the regions to be wetted later by the solder, are covered by a photoresist FL.
  • FIG. 6 shows a cross section through a further intermediate step, in which the photoresist FL has been structured in such a way that that only the areas of MK, which should remain the material of the solder-stop layer later released, remain covered by the material of the photo ⁇ lacks FL. For this it is possible to selectively expose and develop the photoresist.
  • FIG. 7 shows the result of a further intermediate step, in which the entire upper side of the previous electrical component is covered by the material of the later solder stop layer LSS.
  • the sensitive areas are directly covered by the material of the solder stop layer LSS.
  • solder is to be arranged later, is the ver ⁇ remaining residue of the photoresist FL between the material of the solder-stop layer LSS and the contact surface.
  • Figure 8 shows the result of a further Ver ⁇ drive step in which the remaining radicals of the photo ⁇ lacks FL were removed along with the deposited thereon segments of the material of the solder-stop layer LSS so that the surface to be wetted without coverage by the Lot - Stop layer exposed.
  • FIG. 9 shows the result of a further step, namely of applying a solder paste on LP regions corresponding in Wesent ⁇ union areas of the contact surfaces MK. Due to the precisely definable edges of the solder stop layer LSS, the lateral positioning accuracy when applying the solder paste LP need not be too high as long as a substantial area of the contact surface MK is covered by the solder paste LP.
  • FIG. 10 shows the result of a further intermediate step in the production of the electrical component, in which the material of the solder paste LP after heating has concentrated to form a sphere at the location of the contact surface MK.
  • Figure 11 shows a cross section through an electrical construction ⁇ element, in which the contact surface MK on the underside of the electrical component EK and the contact surface MK at the top of the carrier TR via a bump connection, which emerged from the bump ball of Figure 10 is connected.
  • Figure 12 shows a cross section through a further exemplary embodiment in which the electrical component and the EK Trä ⁇ ger TR are connected via a plurality of bump connections BU and connected.
  • a solder stop layer LSS which is preferably also thin, may be arranged on the underside of the electrical component EK.
  • FIG. 13 shows a cross section through an encapsulated electrical component in which a molding compound MM envelopes the electrical component EK at the top side of the carrier TR and fills the gaps Z between the electrical component EK and the carrier TR.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention relates to an electrical module (EB) and to a method for producing an electrical module (EB). The module (EB) has a substrate (TR) with an upper layer (O) and a metal contact surface (MK) arranged thereon, as well as a solder resist layer (LSS) that covers part of the upper side (O), but not the contact surface (MK). The module (EB) also comprises an electrical component (EK) with a contact surface (KF) on the lower side and a solder bump connection (BU) that connects the two contact surfaces (MK, KF). The solder resist layer (O) has a maximum thickness of 200 nm and thereby simplifies subsequent method steps for the encapsulation of the module (EB) with a mould mass (MM).

Description

Beschreibung description
ELEKTRISCHES BAUELEMENT MIT DÜNNER LOT-STOPP-SCHICHT UND VERFAHREN ZU SEINER HERSTELLUNG ELECTRICAL COMPONENT WITH THIN LOT-STOP-LAYER AND METHOD FOR THE PRODUCTION THEREOF
Die Erfindung betrifft elektrische Bauelemente, z. B. für Oberflächenmontage (SMT = Surface Mounted Technology) geeig¬ nete Bauelemente oder Bauelemente mit in SMT-Technik verbaute elektrische Komponenten sowie Verfahren zur Herstellung. The invention relates to electrical components, for. B. for surface mounting (SMT = Surface Mounted Technology) appro ¬ nete components or components with built-in SMT technology electrical components and methods for manufacturing.
In der modernen SMT-Technologie werden lötbare Bumps zum elektrischen Verschalten und mechanischen Verbinden zwischen einem Träger, z. B. einer Leiterplatte, und einer elektrischen Komponente, z. B. diskreten Bauteilen oder Modulen, verwendet. Das Material der Bumps wird in einem Schritt, z.In modern SMT technology, solderable bumps are used for electrical interconnection and mechanical connection between a carrier, e.g. B. a circuit board, and an electrical component, for. B. discrete components or modules used. The material of the bumps is in one step, z.
B. mittels Schablonendruckverfahren (stencil printing) aufgetragen und anschließend erhitzt (Reflow-Prozess ) . Übliche lötbare Materialien, wie z. B. Lotpaste, können Flussmittel enthalten, die beim Erhitzen die Oberfläche des Trägers an- greifen. Ferner besteht die Gefahr, dass Lotpaste an lötbare Oberflächen gelangt, die frei von Lot bleiben sollen, z. B. um elektrische Kurzschlüsse zu vermeiden. B. applied by stencil printing (stencil printing) and then heated (reflow process). Usual solderable materials, such. As solder paste, may contain flux that attack the surface of the carrier when heated. Furthermore, there is a risk that solder paste gets to solderable surfaces that should remain free of solder, z. B. to avoid electrical short circuits.
Um diese Gefahren zu vermeiden, können empfindliche Bereiche der Oberfläche durch eine Schutzschicht, z. B. eine Lot- Stopp-Schicht, bedeckt werden. To avoid these dangers, sensitive areas of the surface can be protected by a protective layer, eg. B. a solder stop layer, are covered.
Problematisch bei der Verwendung einer Lot-Stopp-Schicht ist der erhöhte Aufwand bei der Herstellung der Bauelemente, da die Lot-Stopp-Schicht so strukturiert werden muss, dass in einem optimalen Fall alle empfindlichen Bereiche, aber nicht die tatsächlich mit Lot zu versehenden Bereiche durch die Schutzschicht bedeckt sind. Ferner gilt, dass elektrische Bauelemente immer kleiner werdende Abmessungen aufweisen sollen. Konventionelle Lot-Stopp-Schichten sind, verglichen mit aktuellen Abmessungen von Bump-Verbindungen, schon so dick, dass weitere Probleme bei weiteren Schritten zur Verkapselung der Bauelemente auftreten können. Viele Bauelemente werden verkapselt und mechanisch stabilisiert, indem die Oberseite mit einer Mold-Masse Übergossen und die Masse anschließend gehärtet wird. Problematisch ist nun, dass die Mold-Masse Zwischenräume zwischen der Komponente und dem Träger nicht mehr ausreichend zuverlässig füllt, wenn der Zwischenraum aufgrund der Dicke der Lot-Stopp-Schicht zu niedrig ist. The problem with the use of a solder stop layer is the increased complexity in the manufacture of the components, since the solder stop layer must be structured so that in an optimal case, all sensitive areas, but not actually to be provided with Lot areas are covered by the protective layer. It also holds that electrical Components should have ever smaller dimensions. Conventional solder-stop layers are already so thick compared to current dimensions of bump connections that further problems can occur in further steps to encapsulate the devices. Many components are encapsulated and mechanically stabilized by pouring a mold over the top and then hardening the mass. The problem now is that the mold mass no longer sufficiently filled gaps between the component and the carrier when the gap is too low due to the thickness of the solder stop layer.
Es bestand deshalb die Aufgabe, ein elektrisches Bauelement anzugeben, bei dem Lot ausschließlich gewünschte Bereiche be- netzt und gegebenenfalls nach einem Erhitzen eine Kugel bzw. Halbkugel bildet, ohne sich auf die neben der Kontaktfläche liegenden Bereiche zu verbreiten. Eine Schutzschicht soll da¬ bei eine gute Haftung auf der Oberfläche des Trägers aufwei¬ sen, hohe Temperaturen, z. B. größer als 250 °C in einem Re- flow-Prozess , ohne Degradation aushalten, mechanisch stabil sein, chemisch neutral und passiv sein und den elektrischen Strom nicht leiten. Insbesondere, damit eine später zu ver¬ teilende Mold-Masse möglichst auch die Zwischenräume füllt, soll die Schutzschicht möglichst dünn sein. Ferner bestand der Wunsch nach einem Verfahren zur Herstellung eines solchen Bauelements . It is an object of the present invention to specify an electrical component in which solder wets only desired regions and optionally forms a sphere or hemisphere after heating, without spreading to the regions lying next to the contact surface. A protective layer should there ¬ at a good adhesion on the surface of the carrier aufwei ¬ sen, high temperatures, eg. B. greater than 250 ° C in a reflow process, without enduring degradation, be mechanically stable, chemically neutral and passive and do not conduct the electric current. In particular, so that a later to be divisible mold mass fills as far as possible the interstices, the protective layer should be as thin as possible. Furthermore, there was a desire for a method for producing such a device.
Diesen Wünschen entsprechen das elektrische Bauelement und das Verfahren zur Herstellung eines elektrischen Bauelements gemäß den unabhängigen Ansprüchen. Abhängige Ansprüche gegen vorteilhafte Ausgestaltungen an. Das elektrische Bauelement umfasst einen Träger mit einer Oberseite, eine metallisierte Kontaktfläche auf der Oberseite und eine Lot-Stopp-Schicht, die einen Teil der Oberseite, aber nicht die Kontaktfläche bedeckt. Die Lot-Stopp-Schicht hat eine Dicke von 200 nm oder weniger. These requirements correspond to the electrical component and the method for producing an electrical component according to the independent claims. Dependent claims against advantageous embodiments. The electrical component comprises a carrier having an upper side, a metallized contact surface on the upper side and a solder stop layer covering a part of the upper side, but not the contact surface. The solder stop layer has a thickness of 200 nm or less.
Damit weist die Lot-Stopp-Schicht eine Dicke auf, die selbst bei den aktuell kleinen Abmessungen von Bump-Verbindungen und dadurch geringe Abstände zwischen Träger und elektrischer Komponente Zwischenräume noch zuverlässig gefüllt werden kön¬ nen . Thus, the solder-stop layer has a thickness which Kgs ¬ NEN even at the currently small dimensions of bump connections, thus gaps are still reliably filled small distances between the carrier and electrical component.
Der Träger kann dabei eine Leiterplatte oder ein Chip sein. Die metallisierte Kontaktfläche ist vorzugsweise eine lötbare metallisierte Fläche, die dazu vorgesehen ist, über eineThe carrier can be a printed circuit board or a chip. The metallized contact surface is preferably a solderable metallized surface which is intended to be over a
Bump-Verbindung verschaltet zu werden. Die metallisierte Kon¬ taktfläche kann dabei insbesondere eine so genannte Under- Bump-Metallization sein und wiederum einen mehrschichtigen Aufbau aufweisen. Bump connection to be interconnected. The metallized Kon ¬ clock face may in particular be a so-called under- bump metallization, and in turn have a multilayer structure.
Es ist möglich, dass die Lot-Stopp-Schicht eine Dicke zwi¬ schen 30 nm und 80 nm hat. It is possible that the solder-stop layer has a thickness Zvi ¬ rule 30 nm and 80 nm.
Es ist ferner möglich, dass das Bauelement eine Bump-Kugel auf der metallisierten Kontaktfläche hat. It is also possible that the device has a bump ball on the metallized contact surface.
Die Bump-Kugel auf der metallisierten Kontaktfläche kann dann aus einem Lot-Material bestehen, das durch ein Schablonendruckverfahren auf den Bereich der metallisierten Kontaktflä- che aufgetragen wurde. Bei einem anschließender Erhitzen schmilzt das Material und formt sich aufgrund der Oberflä¬ chenspannung zu einer Form mit relativ kleiner Oberfläche, einer Kugel. Die metallisierte Kontaktfläche kann mit einer weiteren Metallisierung auf der Oberseite des Trägers, z. B. einer Signalleitung in Form einer Streifenleitung, verbunden sein. Neben dieser Metallisierung kann eine weitere Metallisierung auf der Oberseite des Trägers angeordnet sein. Vor- zugsweise sind die beiden weiteren Metallisierungen neben der Kontaktfläche auf der Oberseite des Trägers durch die Lot- Stopp-Schicht bedeckt. Die Lot-Stopp-Schicht kann eine schlechte Benetzbarkeit durch Lot aufweisen. Dann zentriert sich Lot-Material beim Erhitzen selbständig weg vom Bereich der schlechten Benetzbarkeit hin zur metallisierten Kontaktfläche, die frei vom Material der Lot-Stopp-Schicht ist. The bump ball on the metallized contact surface may then consist of a solder material that has been applied to the area of the metallized contact area by a stencil printing method. In a subsequent heating, the material melts and forms due to the Oberflä ¬ chenspannung to form a relatively small surface, a ball. The metallized contact surface can with a further metallization on the top of the carrier, z. B. a signal line in the form of a stripline connected. In addition to this metallization, a further metallization can be arranged on the upper side of the carrier. Preferably, the two further metallizations next to the contact surface on the upper side of the carrier are covered by the solder stop layer. The solder stop layer may have poor solder wettability. Then, when heated, solder material automatically centers away from the region of poor wettability toward the metallized contact surface which is free of the material of the solder stop layer.
Das Lot-Material und/oder sein Flussmittel greifen dabei emp¬ findliche Bereiche auf der Oberseite des Trägers nicht an. Selbst wenn elektrisch leitbares Lot-Material auf einem Be¬ reich neben der Kontaktfläche verbleibt, wirkt die Lot-Stopp- Schicht als elektrischer Isolator und Signalleitungen werden nicht kurzgeschlossen. Es ist ferner möglich, dass das Bauelement zusätzlich eine elektrische Komponente umfasst. Die elektrische Komponente kann eine Kontaktfläche an der Unterseite haben. Das Bauele¬ ment umfasst dann ferner einer Bump-Verbindung, die die beiden Kontaktflächen verbindet. The solder material and / or flux thereby engage emp ¬-sensitive areas on the upper side of the support not. Even if electrically conductive solder material remains on a Be ¬ rich next to the contact surface, the solder stop layer acts as an electrical insulator and signal lines are not short-circuited. It is also possible that the component additionally comprises an electrical component. The electrical component may have a contact surface at the bottom. The Bauele ¬ ment then further comprises a bump connection that connects the two contact surfaces.
Über die Bump-Verbindung sind der Träger und die elektrische Komponente, z. B. ein diskretes Bauteil oder ein Modul, elektrisch leitend miteinander verschaltet und mechanisch verbunden . About the bump connection of the carrier and the electrical component, for. As a discrete component or module electrically interconnected and mechanically connected.
Der Träger kann selbstverständlich eine Vielzahl weiterer metallisierter Kontaktflächen auf seiner Oberfläche aufweisen. Das Bauelement kann ferner eine Vielzahl unterschiedlicher elektrischer Komponenten, die über Bump-Verbindungen mit den metallisierten Kontaktflächen des Trägers verbunden und verschaltet sind, aufweisen, wobei jede der elektrischen Kompo¬ nenten wiederum metallisierte Kontaktflächen an ihren Unter- Seiten haben. Of course, the carrier may have a plurality of further metallized contact surfaces on its surface. The device may also have a variety of different electrical components, which are connected and interconnected via bump connections with the metallized contact surfaces of the carrier, wherein each of the electrical compo ¬ nents in turn have metallized contact surfaces on their lower sides.
Die eine elektrische Komponente oder die Vielzahl elektri¬ scher Komponenten können an ihren Unterseiten ebenfalls jeweils eine Lot-Stopp-Schicht aufweisen. Die Lot-Stopp-Schich- ten der elektrischen Komponenten können dabei konventionelle Schutzschichten sein. Sie können auch Lot-Stopp-Schichten von der Art der vorliegenden Schutzschicht sein. The electrical component or the electrical plurality ¬ shear components may also each have a solder-stop layer on their undersides. The solder-stop layers of the electrical components can be conventional protective layers. They may also be solder stop layers of the type of protective layer present.
Insbesondere wenn zwei Schutzschichten zwischen einer Kompo- nente und dem Träger angeordnet sind, kommt der Vorteil der geringen Dicken der vorliegenden Schutzschichten zum Tragen, da sich die Wirkung auf die Höhe des freien Zwischenraums verdoppelt . Entsprechend ist es möglich, dass das Bauelement eine Mold- Masse umfasst, die zumindest Teile der Oberseite des Trägers und zumindest eine elektrische Komponente bedeckt. In particular, when two protective layers are arranged between a component and the carrier, the advantage of the small thicknesses of the present protective layers comes into play, since the effect on the height of the free gap doubles. Accordingly, it is possible for the component to comprise a molding compound which covers at least parts of the top side of the carrier and at least one electrical component.
Vorteilhaft ist es dann insbesondere, wenn die Mold-Masse auch den Zwischenraum zwischen der elektrischen Komponente und dem Träger bzw. zwischen allen elektrischen Komponenten und dem Träger füllt. It is particularly advantageous if the mold mass also fills the intermediate space between the electrical component and the carrier or between all electrical components and the carrier.
Sollten empfindliche Bauelementstrukturen an der Oberseite des Trägers oder an der Unterseite einer elektrischen Kompo¬ nente angeordnet sein, z. B. MEMS-Bauelementstrukturen wie SAW-Strukturen (SAW = Surface Acoustic Wave = akustische Oberflächenwelle) , BAW-Strukturen (BAW = Bulk Acoustic Wave = akustische Volumenwelle) usw., dann ist bevorzugt, dass ein hermetisch abgeschlossenes Volumen zwischen der Komponente und dem Träger frei von dem Material der Mold-Masse bleibt. Dazu kann eine zusätzliche Rahmenstruktur zwischen der Kompo- nente und dem Träger angeordnet sein, die den Hohlraum seit¬ lich umschließt. Der Hohlraum ist dann durch die Oberflächen des Trägers und der Komponente und durch den Rahmen gebildet. If delicate device structures be arranged on the upper side of the support or on the underside of an electrical compo nent ¬, z. B. MEMS device structures such as SAW structures (SAW = Surface Acoustic Wave = acoustic surface wave), BAW structures (BAW = Bulk Acoustic Wave = bulk acoustic wave), etc., then it is preferred that a hermetically sealed volume between the component and the carrier remains free of the material of the mold mass. For this purpose, an additional frame structure can be arranged between the component and the carrier, which surrounds the cavity since ¬ Lich. The cavity is then formed by the surfaces of the carrier and the component and by the frame.
Es ist möglich, dass das Bauelement eine erste, mit der Kon- taktfläche verschaltete Signalleitung an der Oberseite desIt is possible for the component to have a first signal line connected to the contact surface on the upper side of the contact surface
Trägers umfasst. Das Bauelement hat ferner einer zweite Sig¬ nalleitung an der Oberseite des Trägers. Beide Signalleitungen sind zumindest teilweise von der Lot-Stopp-Schicht be¬ deckt. Der elektrische Widerstand zwischen den beiden Signal- leitungen beträgt 100 ΜΩ oder mehr. Carrier comprises. The device further has a second Sig ¬ nalleitung at the top of the carrier. Both signal lines are at least partially be ¬ covered by the solder-stop layer. The electrical resistance between the two signal lines is 100 Ω or more.
Der laterale Abstand zwischen den Signalleitungen kann dabei in der Größenordnung um 180 ym sein. Die Lot-Stopp-Schicht hat eine Dicke, die - abhängig vom Material der Schicht - so gewählt ist, dass ein Mindestwiderstand von 100 ΜΩ sicherge¬ stellt ist. The lateral distance between the signal lines can be of the order of 180 ym. The solder-stop layer has a thickness, which - is selected such that a minimum resistance of 100 ΜΩ sicherge ¬ represents is - depending on the material of the layer.
Es ist möglich, dass die Lot-Stopp-Schicht Silizium als It is possible that the solder stop layer is silicon as
Hauptbestandteil umfasst oder vollständig aus Silizium be- steht. Main component comprises or consists entirely of silicon.
Es wurde herausgefunden, dass derart dünne Lot-Stopp-Schichten aus Silizium oder einem anderen Material mit ähnlichen elektrischen Isolationseigenschaften überraschend einfach hergestellt werden können, wenn das weiter unten beschriebene Verfahren verwendet wird. Prinzipiell können alle Materialien für die Lot-Stopp-Schicht Verwendung finden, die eine hinrei¬ chend geringe Benetzbarkeit durch Lot und eine hinreichend geringe elektrische Leitfähigkeit aufweisen. Bevorzugt ist dabei, dass die Materialien mit den üblichen Verarbeitungsme¬ thoden, z. B. der Halbleiter-Industrie, abgeschieden werden können und gut auf der Oberseite des Trägers haften. It has been found that such thin solder-stop layers of silicon or other material with similar electrical isolation properties can be made surprisingly easily using the method described below. In principle, all materials for the solder stop layer can be used that sufficiently provides a reasonable ¬ accordingly low wettability by solder and a have low electrical conductivity. Is preferred that the materials with the usual Verarbeitungsme ¬ methods such. As the semiconductor industry, can be deposited and adhere well to the top of the carrier.
Die Lot-Stopp-Schicht kann auch Germanium als Hauptbestand¬ teil umfassen oder aus Germanium bestehen. The solder stop layer can also include germanium as a main ingredient ¬ part or consist of germanium.
Die Lot-Stopp-Schicht kann prinzipiell aus allen dielektri- sehen Materialen bestehen. Bevorzugt sind allerdings diejenigen, die sich relativ einfach als entsprechend dünne Schicht abscheiden lassen. Dazu zählen insbesondere die Materialien, die sich in reaktiven oder nicht reaktiven PVD-Verfahren auf Oberflächen aufbringen lassen, z. B. Oxide und Nitride von Silizium, Titan, Aluminium oder Chrom. The solder stop layer can in principle consist of all dielectric materials. However, preference is given to those which can be deposited relatively easily as a correspondingly thin layer. These include in particular the materials that can be applied to surfaces in reactive or non-reactive PVD processes, for. For example, oxides and nitrides of silicon, titanium, aluminum or chromium.
Es ist möglich, dass das Bauelement auf der Oberseite des Trägers oder an der Unterseite zumindest einer elektrischen Komponente Bauelementstrukturen aufweist. Die Bauelement- strukturen können eine Höhe von 40 ym oder mehr aufweisen. Die Bauelementstrukturen können SAW-Bauelementstrukturen, BAW-Bauelementstrukturen, MEMS-Bauelementstrukturen (MEMS = Micro-Electro-Mechanical System) oder GBAW-It is possible for the component to have component structures on the upper side of the carrier or on the underside of at least one electrical component. The device structures may have a height of 40 ym or more. The component structures may be SAW component structures, BAW component structures, MEMS (micro-electro-mechanical system) device structures or GBAW devices.
Bauelementstrukturen (GBAW = Guided Bulk Acoustic Wave = ge- führte akustische Volumenwelle) oder ähnliche Bauelement¬ strukturen sein. Damit hat der Träger an seiner Oberseite bzw. die elektrische Komponente an ihrer Unterseite eine kom¬ plexe Topologie, die durch übliche Lot-Stopp-Schichten schlecht bzw. gar nicht bedeckbar sind. Component Structures (GBAW = Guided Bulk Acoustic Wave = guided bulk acoustic wave) or similar component ¬ structures be. Thus, the carrier has on its upper side or the electrical component on its underside a com ¬ plex topology, which are poor or not covered by conventional solder stop layers.
Die weiteren lötbaren Metalloberflächen, die durch die Lot- Stopp-Schicht geschützt werden sollen, können Nickel, Kupfer, Legierungen dieser beiden Elemente oder Legierungen mit diesen beiden Elementen, Gold, Silber, Palladium, Rhodium, Zinn, und/oder Zink aufweisen. Die Zahl der Kontaktflächen, der elektrischen Komponenten und der Kontaktflächen der elektrischen Komponenten ist prinzipiell nicht beschränkt, speziell bei elektrischen Komponenten mit integrierten Schaltungen können die elektrische Komponente und der Träger über viele hundert Bump-Verbindungen verschaltet und verbunden sein. The other solderable metal surfaces to be protected by the solder stop layer may be nickel, copper, Alloys of these two elements or alloys with these two elements, gold, silver, palladium, rhodium, tin, and / or zinc have. The number of contact surfaces, the electrical components and the contact surfaces of the electrical components is not limited in principle, especially in electrical components with integrated circuits, the electrical component and the carrier can be interconnected and connected over many hundreds of bump connections.
Der Träger ist nicht auf Leiterplatten beschränkt. Der Träger selbst kann wiederum eine elektrische Komponente, die auf ei¬ nem weiteren Träger oder einer weiteren elektrischen Kompo- nente usw. angeordnet und verschaltet ist, sein. The carrier is not limited to printed circuit boards. The carrier itself can an electrical component, which is arranged on ei ¬ nem further carrier or a further electrical component, etc., and connected to be.
Ein Verfahren zur Herstellung eines solchen elektrischen Bauelements umfasst die Schritte: - Bereitstellen eines Trägers mit einer Oberseite und einer metallisierten Kontaktfläche auf der Oberseite, A method for producing such an electrical component comprises the steps of: providing a carrier with an upper side and a metallized contact surface on the upper side,
- Anordnen einer Lackschicht auf der Oberseite und struktu¬ rieren der Lackschicht so, dass Material der Lackschicht auf der Kontaktoberfläche verbleibt und Bereiche der Oberfläche ohne Kontaktfläche frei vom Material der Lackschicht sind,- arranging a layer of lacquer on the top and struc ¬ Center of the resist layer so that the material of the lacquer layer remains on the contact surface and areas of the surface without the contact surface are free from the material of the resist layer,
- Abscheiden einer Lot-Stopp-Schicht auf die Oberseite des Trägers , Depositing a solder stop layer on top of the carrier,
- Entfernen des restlichen Materials der Lackschicht zusammen mit dem Material der Lot-Stopp-Schicht über der Kontaktflä- che. Die Lackschicht kann dabei ein für Fotolithografie-Prozesse übliches Material umfassen und z. B. durch Aufschleudern aufgebracht werden. Nach dem Aufbringen des Materials der Lot- Stopp-Schicht auf die verbleibenden Bereiche der strukturier- ten Lackschicht und auf die frei gewordenen Oberflächen des Trägers kann das Material des Fotolacks durch Strippen ent¬ fernt werden. Dadurch wird die strukturierte Lot-Stopp- Schicht in Form der erwünschten Lot-Stopp-Maske ohne zusätzliche Strukturierung des Materials der Lot-Stopp-Schicht er- zeugt. Dieses Verfahren reduziert die Komplexität des Gesamt¬ prozesses und der Kosten bei der Herstellung des Bauelements im Vergleich mit konventionellen Verfahren. - Remove the remaining material of the lacquer layer together with the material of the solder stop layer over the contact surface. The lacquer layer may comprise a conventional material for photolithography processes and z. B. be applied by spin coating. After application of the material of the solder stop layer on the remaining portions of the structured varnish layer and on the vacant surfaces of the carrier, the material of the photoresist can be removed by stripping ¬ ent. As a result, the structured solder stop layer in the form of the desired solder stop mask is produced without additional structuring of the material of the solder stop layer. This method reduces the complexity of the overall ¬ process and the cost of manufacturing the device when compared with conventional methods.
Es ist möglich, dass die Lot-Stopp-Schicht eine Dicke erhält, die 200 nm oder weniger beträgt. It is possible for the solder stop layer to have a thickness that is 200 nm or less.
Es ist insbesondere möglich, dass die Lot-Stopp-Schicht eine Dicke erhält, die zwischen 20 nm und 80 nm liegt. Es ist möglich, dass die während des Verfahrens gebildeteIn particular, it is possible for the solder stop layer to have a thickness which is between 20 nm and 80 nm. It is possible that the formed during the process
Lot-Stopp-Schicht Silizium oder Germanium als Hauptbestand¬ teil umfasst oder vollständig aus Silizium oder Germanium be¬ steht . Andere Materialien mit ähnlichen elektrischen Eigenschaften und einer ähnlichen Benetzbarkeit sind ebenso möglich. Lot stop layer comprises silicon or germanium as the main constituent ¬ part or is completely made of silicon or germanium be ¬ . Other materials with similar electrical properties and similar wettability are also possible.
Es ist möglich, dass das elektrische Bauelement eine weitere lötbare Metalloberfläche auf der Oberseite hat und die Lot- Stopp-Schicht direkt auf die weitere lötbare Metalloberfläche abgeschieden wird. Die weitere lötbare Metalloberfläche kann dabei eine Metall¬ oberfläche einer Signalleitung oder eines an der Oberseite des Trägers realisierten kapazitiven, induktiven oder re- sistiven Elements sein. It is possible that the electrical component has another solderable metal surface on the upper side and the solder stop layer is deposited directly onto the further solderable metal surface. The more solderable metal surface can be a metal surface ¬ a signal line or a realized at the top of the carrier capacitive, inductive or re- sistiven element.
Es ist möglich, dass das Material der Lot-Stopp-Schicht mit¬ tels PVD (PVD = Physical Vapor Deposition = physikalische Gasphasenabscheidung) oder mittels CVD (CVD = Chemical Vapor Deposition = chemische Gasphasenabscheidung) aufgebracht wird . It is possible that the material of the solder-stop layer having ¬ means of PVD (PVD = Physical Vapor Deposition = physical vapor deposition) or by CVD (CVD = Chemical Vapor Deposition = chemical vapor deposition) is applied.
Es ist ferner möglich, dass das Verfahren die Schritte It is also possible that the method comprises the steps
Anordnen von Lotpaste, zumindest auf die Kontaktfläche, Anordnen einer elektrischen Komponente mit einer Kontaktfläche an seiner Unterseite auf der Oberseite des Trägers, Reflow-Löten des Bauelements und verbinden der beiden Kontaktflächen mittels einer Bump-Verbindung, Arranging solder paste, at least on the contact surface, arranging an electrical component with a contact surface on its underside on the upper side of the carrier, reflowing the component and connecting the two contact surfaces by means of a bump connection,
umfasst . includes.
Es ist weiterhin möglich, dass das Verfahren den Schritt Einhüllen der elektrischen Komponente mit einer Mold-Masse umfasst. Dabei füllt die Mold-Masse auch den Bereich zwischen der Komponente und dem Träger. It is also possible that the method comprises the step of enveloping the electrical component with a mold mass. The mold mass also fills the area between the component and the carrier.
Der Lack, der vor dem Aufbringen des Materials der Lot-Stopp- Schicht strukturiert wird, um die Lot-Stopp-Maske zu erhal¬ ten, kann eine Dicke zwischen 0,5 μιη und 10 μιτι, z. B. zwi¬ schen 2 ym und 4 ym, aufweisen und ein Standardlack der Halb- leiterfertigung sein. Der Lack kann dabei neben dem Auf- schleudern auch auf die Oberseite des Trägers gesprayt wer¬ den . Die wesentlichen dem Bauelement bzw. dem Verfahren zur Herstellung zugrundeliegenden Gedanken, Funktionsprinzipien und schematische Beispiele sind in den Figuren skizziert. Es zeigen: The lacquer which is patterned prior to the application of the material of the solder-stop layer to form the solder-stop mask to preserver ¬ th may μιη a thickness between 0.5 and 10 μιτι, z. B. between ¬ 2 ym and 4 ym, and have a standard paint semiconductor manufacturing be. The paint can be sprayed next to the spin on the top of the carrier who ¬ . The essential elements underlying the component or the method of production, functional principles and schematic examples are outlined in the figures. Show it:
Fig. 1: einen Querschnitt durch ein elektrisches Bauele¬ ment, Fig. 2: einen Querschnitt durch ein Bauelement mit weiterer Fig. 1: a cross section through an electrical compo ¬ ment, Fig. 2: a cross section through a device with further
Abkapselung,  encapsulation,
Fig. 3: einen Querschnitt durch ein Bauelement mit einer 3 shows a cross section through a component with a
Bump-Kugel auf der Kontaktfläche,  Bump ball on the contact surface,
Fig. 4: einen ersten Zwischenschritt bei der Herstellung eines Bauelements, 4 shows a first intermediate step in the manufacture of a component,
Fig. 5: einen zweiten Zwischenschritt, 5 shows a second intermediate step,
Fig. 6: einen dritten Zwischenschritt, 6 shows a third intermediate step,
Fig. 7: einen vierten Zwischenschritt, Fig. 8: ein erstes Zwischenergebnis bei der Herstellung ei¬ nes komplexen elektrischen Bauelements, Fig. 7: a fourth intermediate step, Fig. 8: a first intermediate result in the production of egg ¬ nes complex electrical component,
Fig. 9: einen weiteren Zwischenschritt, Fig. 10: einen weiteren Zwischenschritt nach einem Erhitzen, 9 shows a further intermediate step, FIG. 10 shows a further intermediate step after heating,
Fig. 11: einen Querschnitt durch eine einfache Ausführungs¬ form des Bauelements, Fig. 12: einen Querschnitt durch eine alternative Ausfüh¬ rungsform, Fig. 13: einen Querschnitt durch ein Bauelement mit dünner 11 shows a cross section through a simple execution ¬ form of the device, Fig. 12: shows a cross section through an alternative exporting ¬ approximate shape, Fig. 13: shows a cross section through a component with a thin
Lot-Stopp-Schicht und einer Mold-Masse, die die Zwischenräume zwischen der elektrischen Komponente und dem Träger füllt.  Lot stop layer and a mold mass that fills the gaps between the electrical component and the carrier.
Figur 1 zeigt einen Querschnitt durch eine einfache Ausfüh¬ rungsform des elektrischen Bauelements EB . Das elektrische Bauelement EB hat einen Träger TR, auf dem eine metallisierte Kontaktfläche MK strukturiert ist. Die metallisierte Kontakt¬ fläche MK ist dazu vorgesehen, über eine Bump-Verbindung mit einer elektrischen Komponente verschaltet zu werden. Auf der Oberseite 0 des Trägers TR ist eine Lot-Stopp-Schicht LSS an¬ geordnet, die diejenigen Bereiche der Oberseite des Trägers TR bedeckt, die nicht direkt mit Lot-Material in Berührung kommen sollen. Figure 1 shows a cross section through a simple Ausfüh ¬ tion form of the electrical component EB. The electrical component EB has a carrier TR, on which a metallized contact surface MK is structured. The metallized contact surface ¬ MK is intended to be connected via a bump connection to an electrical component. On the upper side 0 of the carrier TR, a solder stop layer LSS is arranged on ¬ which covers those areas of the top of the carrier TR, which should not come into direct contact with solder material.
Die metallisierte Kontaktfläche kann dabei eine so genannter Under-Bump-Metallization UBM sein und eine gut benetzbare Oberfläche aufweisen. Figur 2 zeigt einen Querschnitt durch eine Form eines The metallized contact surface may be a so-called under-bump metallization UBM and have a good wettable surface. Figure 2 shows a cross section through a shape of a
elektrischen Bauelements mit relativ dicker Lot-Stopp-Schicht LSS. Die Lot-Stopp-Schicht LSS schützt empfindliche Bereiche auf der Oberseite des Trägers TR zuverlässig vor Benetzung mit Lot, falls die Oberseite des Trägers TR hinreichend flach ist. Wenn das Bauelement durch eine Mold-Masse MM verkapselt werden soll, stellt eine dicke Lot-Stopp-Schicht LSS aller¬ dings ein Hindernis dar, dass das Auffüllen des Zwischenraums Z zwischen der Unterseite der elektrischen Komponente EK, die über Bump-Verbindungen BU mit dem Träger TR verbunden und verschaltet ist, und dem Träger TR füllt. electrical component with relatively thick solder stop layer LSS. The solder stop layer LSS reliably protects sensitive areas on the top side of the carrier TR against wetting with solder, if the top side of the carrier TR is sufficiently flat. If the component is to be encapsulated by a mold mass MM, provides a thick solder-stop layer LSS of all ¬ recently an obstacle, that the filling of the gap Z between the bottom of the electrical component EK, the via bump connections BU connected to the carrier TR and is connected, and the carrier TR fills.
Figur 3 zeigt einen Querschnitt durch ein elektrisches Bau- element, bei dem sich eine Bump-Kugel BU bereits auf der Kon¬ taktfläche MK gebildet hat. Aufgrund der Oberflächenspannung des Lots formt sich ein kugelähnliches Gebilde beim Durchlau¬ fen eines Reflow-Prozesses . Gegenüber der Höhe der Bump-Kugel bzw. der späteren Bump-Verbindung zu einer elektrischen Kom- ponente ist die Dicke der Lot-Stopp-Schicht LSS sehr gering. Figure 3 shows a cross section through an electric element construction, in which a bump ball BU has already formed on the con tact surface ¬ MK. Due to the surface tension of the solder, a ball-like structure at the pres ¬ fen a reflow process formed. Compared with the height of the bump ball or the subsequent bump connection to an electrical component, the thickness of the solder stop layer LSS is very small.
Auf der Oberfläche des Trägers ist ein Material mit lötbarer Oberfläche LO, z. B. eine Signalleitung SL, das Nickel, Kup¬ fer, Gold oder Silber umfassen kann, angeordnet. Ohne Lot- Stopp-Schicht LSS besteht die Gefahr, dass das Material der Bump-Kugel BU sich nicht auf der Kontaktfläche MK sammelt, sondern den Signalleiter angreift und gegebenenfalls den Sig¬ nalleiter und ein weiteres Schaltungselement an der Oberseite des Trägers kurzschließt. On the surface of the support is a material with solderable surface LO, z. B. a signal line SL, which may include nickel, Kup ¬ fer, gold or silver arranged. Without solder stop layer LSS there is a risk that the material of the bump ball BU does not collect on the contact surface MK, but attacks the signal conductor and optionally short-circuits the Sig ¬ nalleiter and another circuit element at the top of the carrier.
Figur 4 zeigt einen Querschnitt durch ein erstes Zwischenpro¬ dukt bei der Herstellung des elektrischen Bauelements. Auf dem Träger TR sind die Kontaktfläche MK und der Signalleiter SL als Beispiel für zu schützende Elemente an der Oberseite des Trägers TR angeordnet. Figure 4 shows a cross section through a first Zwischenpro ¬ domestic product in the production of the electrical component. On the carrier TR, the contact surface MK and the signal conductor SL are arranged as an example of elements to be protected on the upper side of the carrier TR.
Figur 5 zeigt einen Querschnitt durch einen weiteren Zwischenschritt, bei dem die gesamte Oberfläche, inklusive der zu schützenden Bereiche und der später vom Lot zu benetzenden Bereiche durch einen Fotolack FL bedeckt sind. FIG. 5 shows a cross section through a further intermediate step, in which the entire surface, including the regions to be protected and the regions to be wetted later by the solder, are covered by a photoresist FL.
Figur 6 zeigt einen Querschnitt durch einen weiteren Zwischenschritt, bei dem der Fotolack FL so strukturiert wurde, dass lediglich die Bereiche MK, die später frei vom Material der Lot-Stopp-Schicht bleiben sollen, vom Material des Foto¬ lacks FL bedeckt bleiben. Dazu ist es möglich, den Fotolack selektiv zu belichten und zu entwickeln. FIG. 6 shows a cross section through a further intermediate step, in which the photoresist FL has been structured in such a way that that only the areas of MK, which should remain the material of the solder-stop layer later released, remain covered by the material of the photo ¬ lacks FL. For this it is possible to selectively expose and develop the photoresist.
Figur 7 zeigt das Ergebnis eines weiteren Zwischenschritts, bei dem die gesamte Oberseite des bisherigen elektrischen Bauelements durch das Material der späteren Lot-Stopp-Schicht LSS bedeckt wird. Die empfindlichen Bereiche sind direkt durch das Material der Lot-Stopp-Schicht LSS bedeckt. Dort, wo später Lot angeordnet werden soll, befindet sich der ver¬ bleibende Rest des Fotolacks FL zwischen dem Material der Lot-Stopp-Schicht LSS und der Kontaktfläche. FIG. 7 shows the result of a further intermediate step, in which the entire upper side of the previous electrical component is covered by the material of the later solder stop layer LSS. The sensitive areas are directly covered by the material of the solder stop layer LSS. Where solder is to be arranged later, is the ver ¬ remaining residue of the photoresist FL between the material of the solder-stop layer LSS and the contact surface.
Entsprechend zeigt Figur 8 das Ergebnis eines weiteren Ver¬ fahrensschritts, bei dem die verbleibenden Reste des Foto¬ lacks FL zusammen mit den darauf abgeschiedenen Segmenten des Materials der Lot-Stopp-Schicht LSS entfernt wurden, sodass die zu benetzende Oberfläche ohne Bedeckung durch die Lot- Stopp-Schicht freiliegt. Accordingly, Figure 8 shows the result of a further Ver ¬ drive step in which the remaining radicals of the photo ¬ lacks FL were removed along with the deposited thereon segments of the material of the solder-stop layer LSS so that the surface to be wetted without coverage by the Lot - Stop layer exposed.
Figur 9 zeigt das Ergebnis eines weiteren Schritts, nämlich des Auftragens einer Lotpaste LP auf Bereiche, die im Wesent¬ lichen den Bereichen der Kontaktflächen MK entsprechen. Aufgrund der präzise definierbaren Ränder der Lot-Stopp-Schicht LSS braucht die laterale Positionierungsgenauigkeit beim Auf¬ bringen der Lotpaste LP nicht allzu hoch zu sein, solange ein wesentlicher Bereich der Kontaktfläche MK von der Lotpaste LP bedeckt ist. Figur 10 zeigt das Ergebnis eines weiteren Zwischenschritts bei der Herstellung des elektrischen Bauelements, bei dem sich das Material der Lotpaste LP nach einem Erhitzen zu einer Kugel an der Stelle der Kontaktfläche MK konzentriert hat . Figure 9 shows the result of a further step, namely of applying a solder paste on LP regions corresponding in Wesent ¬ union areas of the contact surfaces MK. Due to the precisely definable edges of the solder stop layer LSS, the lateral positioning accuracy when applying the solder paste LP need not be too high as long as a substantial area of the contact surface MK is covered by the solder paste LP. FIG. 10 shows the result of a further intermediate step in the production of the electrical component, in which the material of the solder paste LP after heating has concentrated to form a sphere at the location of the contact surface MK.
Figur 11 zeigt einen Querschnitt durch ein elektrisches Bau¬ element, bei dem die Kontaktfläche MK an der Unterseite der elektrischen Komponente EK und die Kontaktfläche MK an der Oberseite des Trägers TR über eine Bump-Verbindung, die aus der Bump-Kugel der Figur 10 hervorgegangen ist, verbunden sind . Figure 11 shows a cross section through an electrical construction ¬ element, in which the contact surface MK on the underside of the electrical component EK and the contact surface MK at the top of the carrier TR via a bump connection, which emerged from the bump ball of Figure 10 is connected.
Figur 12 zeigt einen Querschnitt durch eine weitere Ausfüh- rungsform, bei der die elektrische Komponente EK und der Trä¬ ger TR über eine Vielzahl von Bump-Verbindungen BU verschaltet und verbunden sind. Zusätzlich zur Lot-Stopp-Schicht LSS an der Oberseite des Trägers TR kann eine - vorzugsweise ebenso dünne - Lot-Stopp-Schicht LSS an der Unterseite der elektrischen Komponente EK angeordnet sein. Figure 12 shows a cross section through a further exemplary embodiment in which the electrical component and the EK Trä ¬ ger TR are connected via a plurality of bump connections BU and connected. In addition to the solder stop layer LSS on the upper side of the carrier TR, a solder stop layer LSS, which is preferably also thin, may be arranged on the underside of the electrical component EK.
Figur 13 zeigt schließlich einen Querschnitt durch ein ver- kapseltes elektrisches Bauelement, bei dem eine Mold-Masse MM die elektrische Komponente EK an der Oberseite des Trägers TR einhüllt und die Zwischenräume Z zwischen der elektrischen Komponente EK und dem Träger TR füllt. Bezugs zeichenliste Finally, FIG. 13 shows a cross section through an encapsulated electrical component in which a molding compound MM envelopes the electrical component EK at the top side of the carrier TR and fills the gaps Z between the electrical component EK and the carrier TR. Reference sign list
BU: Bump-Verbindung BU: bump connection
EB: elektrisches Bauelement EB: electrical component
EK: elektrische KomponenteEK: electrical component
FL: Fotolack FL: photoresist
KF: Kontaktfläche  KF: contact area
LO: lötbare Oberfläche  LO: solderable surface
LP: Lotpaste  LP: solder paste
LSS : Lot-Stopp-Schicht  LSS: solder stop layer
MK: metallisierte Kontaktfläche MK: metallized contact surface
MM: Mold-Masse MM: Mold mass
0: Oberseite des Trägers 0: top of the carrier
SL: Signalleitung SL: signal line
TR: Träger  TR: carrier
UBM: Under-Bump-Metallization UBM: Under Bump Metallization
Z : Zwischenraum Z: gap

Claims

Patentansprüche claims
1. Elektrisches Bauelement (EB) , umfassend 1. Electrical component (EB), comprising
- einen Träger (TR) mit einer Oberseite (0) ,  a support (TR) with a top (0),
- eine metallisierte Kontaktfläche (MK) auf der Oberseite (0) , a metallized contact surface (MK) on the upper side (0),
- eine Lot-Stopp-Schicht (LSS) , die einen Teil der Oberseite (0) aber nicht die Kontaktfläche (MF) bedeckt,  a solder stop layer (LSS) covering part of the top (0) but not the contact surface (MF),
wobei in which
- die Lot-Stopp-Schicht (LSS) eine Dicke von 200 nm oder weniger hat. - The solder stop layer (LSS) has a thickness of 200 nm or less.
2. Bauelement nach dem vorherigen Anspruch, wobei die Lot- Stopp-Schicht (LSS) eine Dicke zwischen 30 nm und 80 nm hat. 2. Device according to the preceding claim, wherein the solder stop layer (LSS) has a thickness between 30 nm and 80 nm.
3. Bauelement nach dem vorherigen Anspruch, ferner umfassend eine Bump-Kugel (BU) auf der metallisierten Kontaktfläche (MK) . 3. The component according to the preceding claim, further comprising a bump ball (BU) on the metallized contact surface (MK).
4. Bauelement nach einem der vorherigen Ansprüche, ferner umfassend eine elektrische Komponente (EK) mit einer 4. The component according to one of the preceding claims, further comprising an electrical component (EK) with a
Kontaktfläche (KF) an der Unterseite und eine Bump-Verbindung (BU) , die die beiden Kontaktflächen (MK, KF) verbindet. Contact surface (KF) at the bottom and a bump connection (BU), which connects the two contact surfaces (MK, KF).
5. Bauelement nach dem vorherigen Anspruch, ferner umfassend eine Mold-Masse (MM) , die zumindest Teile der Oberseite des Trägers (TR) und die elektrische Komponente (EK) bedeckt. 5. The component according to the preceding claim, further comprising a mold mass (MM) covering at least parts of the top of the carrier (TR) and the electrical component (EK).
6. Bauelement nach dem vorherigen Anspruch, wobei die Mold- Masse (MM) auch den Zwischenraum (Z) zwischen der 6. The component according to the preceding claim, wherein the molding compound (MM) and the intermediate space (Z) between the
elektrischen Komponente (EK) und dem Träger (TR) füllt. electrical component (EK) and the carrier (TR) fills.
7. Bauelement nach einem der vorherigen Ansprüche, ferner umfassend 7. The component according to one of the preceding claims, further comprising
- eine erste, mit der Kontaktfläche (MK) verschaltete  - A first, with the contact surface (MK) interconnected
Signalleitung (SL) an der Oberseite (0) des Trägers (TR) , - eine zweite Signalleitung (SL) an der Oberseite (0) des Trägers (TR) , wobei Signal line (SL) at the top (0) of the carrier (TR), - a second signal line (SL) at the top (0) of the carrier (TR), wherein
- beide Signalleitungen (SL) zumindest teilweise von der Lot- Stopp-Schicht (LSS) bedeckt sind und  - Both signal lines (SL) are at least partially covered by the solder stop layer (LSS) and
- der elektrische Widerstand zwischen den beiden  - the electrical resistance between the two
Signalleitungen (SL) 100 ΜΩ oder mehr beträgt. Signal lines (SL) is 100 ΜΩ or more.
8. Bauelement nach einem der vorherigen Ansprüche, wobei die Lot-Stopp-Schicht (LSS) Silizium als Hauptbestandteil umfasst oder aus Silizium besteht. 8. The component according to one of the preceding claims, wherein the solder stop layer (LSS) comprises silicon as the main component or consists of silicon.
9. Bauelement nach einem der vorherigen Ansprüche, wobei auf der Oberseite (0) des Trägers (TR) Bauelementstrukturen angeordnet sind, die Höhen von 40 μιη oder mehr aufweisen. 9. The component according to one of the preceding claims, wherein on the upper side (0) of the carrier (TR) component structures are arranged, the heights of 40 μιη or more.
10. Verfahren zur Herstellung eines elektrischen Bauelements (EB) , umfassend die Schritte 10. A method for producing an electrical component (EB), comprising the steps
- Bereitstellen eines Trägers (TR) mit einer Oberseite (0) und einer metallisierten Kontaktfläche (MK) auf der Oberseite (0) ,  Providing a carrier (TR) with a top side (0) and a metallized contact surface (MK) on the top side (0),
- Anordnen einer Lackschicht (FL) auf der Oberseite (0) und strukturieren der Lackschicht (FL) so, dass Material der Lackschicht (FL) auf der Kontaktfläche (MK) verbleibt und Bereiche der Oberfläche (0) ohne Kontaktfläche (MK) frei vom Material der Lackschicht (FL) sind, Arranging a lacquer layer (FL) on the upper side (0) and structuring the lacquer layer (FL) so that material of the lacquer layer (FL) remains on the contact surface (MK) and areas of the surface (0) without contact surface (MK) are free from Material of the lacquer layer (FL) are,
- Abscheiden einer Lot-Stopp-Schicht (LSS) auf die Oberseite (0) des Trägers (TR) , - Entfernen des restlichen Materials der Lackschicht (FL) zusammen mit dem Material der Lot-Stopp-Schicht (LSS) über der Kontaktfläche (MK) . Depositing a solder stop layer (LSS) on the upper side (0) of the carrier (TR), - Removal of the remaining material of the paint layer (FL) together with the material of the solder stop layer (LSS) over the contact surface (MK).
11. Verfahren nach dem vorherigen Anspruch, wobei die Lot- Stopp-Schicht (LSS) eine Dicke erhält, die 200 nm oder weniger beträgt. A method according to the preceding claim, wherein the solder stop layer (LSS) has a thickness of 200 nm or less.
12. Verfahren nach dem vorherigen Anspruch, wobei die LotStopp-Schicht (LSS) eine Dicke erhält, die zwischen 20 nm und12. The method according to the preceding claim, wherein the LotStopp layer (LSS) receives a thickness between 20 nm and
80 nm liegt. 80 nm.
13. Verfahren nach einem der drei vorherigen Ansprüche, wobei die Lot-Stopp-Schicht (LSS) Silizium als Hauptbestandteil umfasst oder aus Silizium besteht. 13. The method according to any one of the three preceding claims, wherein the solder stop layer (LSS) comprises silicon as the main component or consists of silicon.
14. Verfahren nach einem der vier vorherigen Ansprüche, wobei das elektrische Bauelement (EB) eine weitere lötbare 14. The method according to any one of the four previous claims, wherein the electrical component (EB) another solderable
Metalloberfläche (LO) auf der Oberseite hat und die Lot- Stopp-Schicht (LSS) direkt auf die weitere lötbare Metal surface (LO) on the top and the solder stop layer (LSS) directly on the other solderable
Metalloberfläche (LO) abgeschieden wird. Metal surface (LO) is deposited.
15. Verfahren nach einem der fünf vorherigen Ansprüche, wobei die Lot-Stopp-Schicht (LSS) mittels PVD oder CVD aufgebracht wird. 15. The method according to any one of the five preceding claims, wherein the solder stop layer (LSS) is applied by means of PVD or CVD.
16. Verfahren nach einem der fünf vorherigen Ansprüche, ferner umfassend die Schritte 16. The method according to any one of the five previous claims, further comprising the steps
- Anordnen von Lotpaste (LP) zumindest auf die Kontaktfläche (MK) ,  Arranging solder paste (LP) at least on the contact surface (MK),
- Anordnen einer elektrischen Komponente (EK) mit einer  - Arranging an electrical component (EK) with a
Kontaktfläche (MK, KF) an seiner Unterseite auf der Oberseite (0) des Trägers (TR) , - Reflow-Löten des Bauelements (EB) und verbinden der beiden Kontaktflächen (MK, KF) mittels einer Bump-Verbindung (BU) . Contact surface (MK, KF) on its underside on the top (0) of the carrier (TR), - Reflow soldering of the device (EB) and connect the two contact surfaces (MK, KF) by means of a bump connection (BU).
17. Verfahren nach dem vorherigen Anspruch, ferner umfassend den Schritt 17. A method according to the preceding claim, further comprising the step
- Einhüllen der elektrischen Komponente (EK) mit einer Mold- Masse (MM) ,  Wrapping the electrical component (EK) with a molding compound (MM),
wobei in which
- die Mold-Masse (MM) auch den Bereich zwischen der  - The Mold mass (MM) also the area between the
Komponente (EK) und dem Träger (TR) füllt. Component (EK) and the carrier (TR) fills.
EP16762778.5A 2015-11-27 2016-09-06 Electrical component with thin solder resist layer and method for the production thereof Withdrawn EP3381052A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015120647.1A DE102015120647B4 (en) 2015-11-27 2015-11-27 Electrical device with thin solder stop layer and method of manufacture
PCT/EP2016/070973 WO2017088998A1 (en) 2015-11-27 2016-09-06 Electrical component with thin solder resist layer and method for the production thereof

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EP (1) EP3381052A1 (en)
JP (1) JP2018536994A (en)
KR (1) KR20180088798A (en)
CN (1) CN108369935A (en)
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FI130166B (en) 2019-03-08 2023-03-23 Picosun Oy Solder mask

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CN108369935A (en) 2018-08-03
WO2017088998A1 (en) 2017-06-01
US20180331062A1 (en) 2018-11-15
KR20180088798A (en) 2018-08-07
BR112018010666A2 (en) 2018-11-13
JP2018536994A (en) 2018-12-13
DE102015120647A1 (en) 2017-06-01
BR112018010666A8 (en) 2019-02-26

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