EP3259581A1 - Humidity sensor and method for manufacturing the sensor - Google Patents

Humidity sensor and method for manufacturing the sensor

Info

Publication number
EP3259581A1
EP3259581A1 EP16708293.2A EP16708293A EP3259581A1 EP 3259581 A1 EP3259581 A1 EP 3259581A1 EP 16708293 A EP16708293 A EP 16708293A EP 3259581 A1 EP3259581 A1 EP 3259581A1
Authority
EP
European Patent Office
Prior art keywords
halogenated
layer
humidity
humidity sensor
polymeric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16708293.2A
Other languages
German (de)
French (fr)
Other versions
EP3259581B1 (en
Inventor
Scott E. Beck
Brian G. MOFFAT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of EP3259581A1 publication Critical patent/EP3259581A1/en
Application granted granted Critical
Publication of EP3259581B1 publication Critical patent/EP3259581B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials

Definitions

  • Capacitive and resistive type humidity sensors rely on the ability of the sensing material to quickly absorb and desorb water molecules. The absorbed moisture changes the physical properties of the sensing material either by changing its resistance, permittivity, or stress, which can each directly affect the electrical response of the sensor.
  • Bulk polyimide films are often used as the humidity sensing material in many capacitive and resistive humidity sensors.
  • humidity sensors using bulk polyimide films typically exhibit an inherent hysteresis due to the adsorption, absorption, diffusion, and desorption properties of the films.
  • such sensors often have a relatively large response time. What would be desirable is a humidity sensor that exhibits a relatively small amount of hysteresis (e.g. 2 Sigma hysteresis of 1% or less) and/or a faster response time.
  • a humidity sensor may include a polymeric humidity sensing layer disposed over an electrode layer.
  • the polymeric humidity sensing layer may include a halogenated layer disposed over the polymeric humidity sensing layer.
  • the polymeric humidity sensing layer may, for example, include a polyimide and the halogenated layer may include a monolayer or less than a monolayer of a halogenated material such as a fluorinated material.
  • a humidity sensor may include a substrate and an electrode layer that is supported by the substrate.
  • the electrode layer may define a first capacitive plate and a second capacitive plate.
  • a non- halogenated humidity sensing layer may be disposed adjacent the electrode layer and may include a number of openings to increase an effective surface area of the non- halogenated humidity sensing layer.
  • a halogenated layer may adjoin the non- halogenated humidity sensing layer.
  • a humidity sensor may include a substrate and an electrode layer that is supported by the substrate.
  • the electrode layer may define a first capacitive plate and a second capacitive plate.
  • a polyimide humidity sensing layer may be disposed adjacent the electrode layer.
  • the polyimide humidity sensing layer includes a sensing surface and a thickness, and includes a number of openings formed within the sensing surface to increase an effective surface area of the sensing surface.
  • the sensing surface of the polyimide humidity sensing layer may be fluorinated to a depth that is less than the thickness of the polyimide humidity sensing layer, resulting in a fluorinated sensing surface.
  • a method of manufacturing a humidity sensor may include forming an electrode layer over a substrate.
  • a non- halogenated polymeric material may be disposed over the electrode layer as a humidity sensing material. With the non-halogenated polymeric material disposed over the electrode layer, the non-halogenated polymeric material may be
  • Figure 1 is a schematic cross-sectional side view of an illustrative humidity sensor in accordance with an embodiment of the disclosure
  • Figure 2 is a cross-sectional side view of an illustrative humidity sensor in accordance with an embodiment of the disclosure
  • Figure 3 is a top view of a plate-type humidity sensor, with the humidity sensing material not shown to reveal the electrodes;
  • Figure 4 is a schematic cross-sectional side view of the humidity sensor of
  • Figure 5 is a schematic cross-sectional side view of the humidity sensor of
  • Figure 6 is a top view of the humidity sensor of Figure 5;
  • Figure 7 is an alternate top view of the humidity sensor of Figure 5;
  • Figure 8 is a top view of an interdigitated humidity sensor
  • Figure 9 is a schematic cross-sectional side view of the humidity sensor of
  • Figure 8 take along line B-B' ;
  • Figure 10 is an enlarged cross-sectional side view of a portion of Figure 9 after additional processing of the humidity sensing material.
  • Figure 11 is a flow diagram illustrating an illustrative method for making a humidity sensor.
  • references in the specification to "an embodiment”, “some embodiments”, “other embodiments”, etc., indicate that the embodiment described may include one or more particular features, structures, and/or characteristics. However, such recitations do not necessarily mean that all embodiments include the particular features, structures, and/or characteristics. Additionally, when particular features, structures, and/or characteristics are described in connection with one embodiment, it should be understood that such features, structures, and/or characteristics may also be used connection with other embodiments whether or not explicitly described unless clearly stated to the contrary.
  • FIG. 1 is a schematic cross-sectional side view of an illustrative humidity sensor 10, showing particular features of the humidity sensor 10.
  • the illustrative humidity sensor 10 includes a substrate 12, which in some instances may be a silicon substrate, although other substrates may be used.
  • the illustrative humidity sensor 10 includes an electrode layer 14.
  • the humidity sensor 10 is a plate-style humidity sensor in which the electrode layer 14 includes a pair of capacitive plates 14a and 14b.
  • the humidity sensor 10 may be an interdigitated style humidity sensor in which the electrode layer includes a pair of interdigitated electrodes, or any other suitable humidity sensor configuration as desired.
  • the illustrative humidity sensor 10 further includes a humidity sensing material 16 that in some cases may include a first layer 18 and a second layer 20.
  • the first layer 18 may be a polymer such as but not limited to a polyimide, a parylene, a benzocyclobutene, and divinylsiloxane bis(benzocyclobutene).
  • the first layer 18 may be a polyimide and the second layer 20 may be a halogenated layer that is deposited onto the first layer 18.
  • the second layer 20 may be a fluorinated layer, although other halogens such as chlorine and bromine may also be used.
  • the second layer 20 may not be a separate layer, but may instead represent a fluorination of at least part of an outer surface of the first layer 18.
  • the humidity sensing layer 16 may include a sensing surface 22 and an overall thickness that is indicated on Figure 1 as a dimension Di.
  • the second layer 20 may represent a halogenated portion of the first layer 18, and may have a thickness (or perhaps thought of as a halogenation depth) that is indicated as a dimension D2.
  • the second layer 20 may represent a portion of the first layer 18 that has been fluorinated to a depth D2 that is less than the thickness Di of the first layer 18.
  • the second layer 20, representing a halogenation such as fluorination of the sensing surface may be considered as forming a mono-layer or in some cases a partial mono-layer of the halogen such as fluorine.
  • the sensing surface 22 may, for example, be fluorinated by plasma deposition of CxHyFz onto the polyimide humidity sensing layer 16, where x is an integer ranging from 1 to 4, y is an integer ranging from 0 to 2 and z is an integer ranging from 2 to 8.
  • the sensing surface 22 may be fluorinated via plasma deposition of one or more of CF4, C2F6, C4F8, CHF3 and CH2F2.
  • FIG 2 is a side view of an illustrative humidity sensor 50.
  • the humidity sensor 50 is a plate-style humidity sensor.
  • the illustrative humidity sensor 50 includes a substrate 52 and a dielectric layer 54 disposed on the substrate 52.
  • the substrate 52 may be silicon and the dielectric layer 54 may, for example, be S1O2.
  • a porous platinum layer 56 forms a common plate that is shared by two series capacitors CXI and CX2.
  • Layer 58 is a patterned layer that forms the other plates of capacitors CXI and CX2.
  • layer 58 may be patterned as illustrated in Figure 3 to form a capacitor plate 58A for capacitor CXI and a separate capacitor plate 58B for capacitor CX2.
  • Capacitor plate 58A may be electrically connected to gold pad 64A and capacitor plate 58B may be electrically connected to gold pad 64B.
  • the layer 58 may be a titanium tungsten alloy.
  • a passivation layer 60 may be formed over the porous platinum layer 56, and may be a polyimide, for example.
  • a dielectric layer 62 is provided between the porous platinum layer 56 and the titanium tungsten alloy layer 58 and in some cases functions as the humidity sensing layer.
  • the dielectric layer 62 may be halogenated or include a halogenated layer such as a fluorinated layer.
  • Gold pads 64A and 64B permit electrical connections to be made to the humidity sensor 50.
  • Figures 3 through 10 provide additional examples of humidity sensors.
  • Figure 3 is a top view of a plate-type humidity sensor 30, with the humidity sensing material not shown to reveal the electrode layer 14, while
  • Figure 4 is a schematic cross- sectional side view of the humidity sensor of Figure 3 taken along line A-A', illustrating a sequence of the substrate 12, the electrode layer 14 and the humidity sensing material 16.
  • Figure 5 is a schematic cross-sectional side view of the humidity sensor of Figure 3 taken along line A-A', after additional processing of the humidity sensing material to create pores.
  • openings 32 have been formed in the humidity sensing material 16 to increase the porosity and thus the effective surface area of the humidity sensing material 16. This may increase the sensitivity of the humidity sensor.
  • Figure 6 is a top view of the humidity sensor 30 of Figure 5, illustrating that the openings 32 of Figure 5 may include a plurality of pores 34 formed within the humidity sensing material 16.
  • Figure 7 is an alternate top view of the humidity sensor 30 of Figure 5, illustrating that the openings 32 of Figure 5 may include one or more elongated channels 36 formed within the humidity sensing material 16.
  • Figure 8 is a top view of an interdigitated humidity sensor 40
  • Figure 9 shows a schematic cross-sectional side view of the interdigitated humidity sensor 40 of Figure 8 taken along line B-B' illustrating the sequence of a substrate 12, an electrode layer 14 and a humidity sensing material 16.
  • the electrode layer includes two interdigitated electrodes.
  • Figure 10 is an enlarged cross- sectional side view of a portion of the interdigitated humidity sensor 40 of Figure 9 after additional processing of the humidity sensing material 16.
  • openings 42 have been formed in the humidity sensing material 16 to increase the porosity and thus the effective surface area of the humidity sensing material 16. This may increase the sensitivity of the interdigitated humidity sensor.
  • FIG. 1 1 is a flow diagram showing an illustrative method of manufacturing a humidity sensor such as the humidity sensor 10 (Figure 1), the humidity sensor 30 ( Figure 3), the humidity sensor 40 ( Figure 8) or the humidity sensor 50 ( Figure 2).
  • an electrode layer may be formed over a substrate.
  • the electrode layer may be formed directly on the substrate while in other cases there may be one or more intervening layers.
  • a non- halogenated polymeric layer may be disposed over the electrode layer, as generally seen at block 72.
  • the non-halogenated polymeric layer may be a non- halogenated polyimide layer.
  • a plurality of openings, such as channels, pores or other void spaces may be formed within the non-halogenated polymeric layer.
  • the non-halogenated polymeric layer may be halogenated.
  • halogenating the non-halogenated polymeric layer may include a chemical reaction and/or a thermal reaction, such as in a plasma environment.
  • halogenating the non-halogenated polymeric material may include an ion implantation process.
  • halogenating the non-halogenated polymeric material may include fluorinating the non-halogenated polymeric material, and may for example result in an organofluorine thin film disposed on the non- halogenated polymeric material.
  • the humidity sensing material may include, beyond those already discussed, a polymer film (polyimides, benzocyclobutene, nylons, etc.), an organosilicate film (Si-O-C polymers, divinylsiloxane bis (benzocyclobutene), etc.), and/or an inorganic film that has been halogenated, such as with fluorine, chlorine or bromine, and/or coated with a halogenated thin film such as a perfluorocarbon or an organofluorine (CxFy) thin film.
  • a polymer film polyimides, benzocyclobutene, nylons, etc.
  • an organosilicate film Si-O-C polymers, divinylsiloxane bis (benzocyclobutene), etc.
  • an inorganic film that has been halogenated such as with fluorine, chlorine or bromine
  • a halogenated thin film such as a perfluorocarbon or an organofluorine
  • the capacitive and/or resistive hysteresis effect of the humidity sensor may be diminished compared to a humidity sensor that uses an untreated humidity sensing material.
  • halogenating the humidity sensing material may make the humidity sensing material more hydrophobic, and thus less susceptible to hysteresis. Fluorination is a favorable method of halogenation due to the availability of a large number of fluorine sources within a typical microelectronics fabrication facility, although chlorine and bromine are also available for use.
  • the humidity sensing material may be first etched or otherwise processed to increase its effective surface area before halogenating and/or coating the humidity sensing material. It is contemplated that the halogenation may extend into etched pores, holes, trenches and/or other etched features.
  • the humidity sensing material may include, for example, polyimides, parylenes, benzocyclobutenes, polyethersulfone, celluloseacetatebutyrate, poly(methyl methacrylate), and/or any other suitable humidity sensing material.
  • Such humidity sensing materials may be improved by modifying their surface.
  • the humidity sensing material may be improved by either directly halogenating the humidity sensing material or by depositing an organofluorine (CxFy) thin film on the humidity sensing material.
  • the deposited organofluorine thin film may be on the order of a single monolayer to many monolayers, as desired. It is contemplated that other halocarbons such as haloalkanes may be used to form hydrophobic surfaces. This can be accomplished by one or a combination of chemical reaction, ion implantation and deposition.
  • the chemical reaction of fluorine with organic and organosilicate humidity sensing materials can be accomplished with a variety of chemicals.
  • a simple way to create reactive fluorine is in a plasma environment using fluorine containing gases such as F 2 , NF3, anhydrous HF, S1F4, CIF3, and XeF2.
  • these gases may be blended with inert diluents such as Ar, He, and N2 to improve the production of fluorine radicals.
  • Most plasma etch and plasma chemical vapor deposition systems control the temperature of the processed substrate in order to allow for control of the chemical reaction between the fluorine and the humidity sensing material.
  • downstream plasmas may be used to eliminate ion interactions with the substrate of the humidity sensor, thus allowing for purely chemical interactions. It is also possible to fluorinate surfaces of polymer films with XeF2 vapors.
  • the SPTS Xactix tool for example, is specifically built for XeF2 reactions and is used within MEMS manufacturing.
  • Ion implantation of fluorine and fluorinated species into the humidity sensing material is also contemplated.
  • low energy ions may be used to keep the ions near the surface of the humidity sensing material.
  • Ion implanters typically use BF3 to implant boron.
  • ions of BF2 are implanted into the silicon. This can be done by plasma immersion ion implantation.
  • One commercially available tool that produces low energy ions is the Varian VHSta PLAD. Higher energy ions are also possible with other implanters that are configured to directly implant F-ions or BF x -ions into the humidity sensing material.
  • the humidity sensing material can be annealed/heat treated in a conventional furnace to allow additional chemical reactions and diffusion of the fluorine.
  • C x F y and C x H y F z type materials are possible in plasma etch and plasma enhanced CVD tools. Under appropriate conditions, deposition of these species is possible with, for example, one or more of the following gases: CF4, C2F6, C4F8, CHF3, CH2F2, C3F8, C4F6, and C5F8.
  • Additives and diluents may including O2, He, N 2 , Ar, Hi, NF3, SFe, XeF 2 , C1F 3 , F 2 , SiF 4 , and/or HF may be added to the fluorocarbon gases in order to modify the chemical species available for deposition.
  • halocarbons can be formed by the above processes using other halogenated gases commonly found in a microelectronics or MEMS fabrication facility, such as HC1, CI2, HBr, CIF3, HI, BCh, and BBr3. In some cases, all three interactions may take place in plasma-based tools.
  • divinylsiloxane bis (benzocyclobutene) (DVS-bis-BCB) is etched in O2+F2 plasma which modifies the surface and bulk material properties of BCB.
  • Optimizing the ratio of O2 and F2 may provide greater control of the etch rate of DVS-bis-BCB and the film thickness.
  • DVS-bis-BCB has good adhesion properties and should adhere better than polyimide when exposed to chemical cleaners such as ammonia.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

Humidity sensors may exhibit a relatively small amount of hysteresis and/or a faster response time. In some cases, a humidity sensor may include a polymeric humidity sensing layer disposed over an electrode layer. The polymeric humidity sensing layer may include a halogenated layer disposed over the polymeric humidity sensing layer. The polymeric humidity sensing layer may, for example, include a polyimide and the halogenated layer may include a monolayer or less than a monolayer of a halogenated material such as a fluorinated material..

Description

HUMIDITY SENSOR
Related Applications
[0001] This application claims the benefit of U.S. Provisional Application Serial No. 62/117,208 filed February 17, 2015 entitled SURFACE CHEMISTRY MODIFICATION OF HUMIDITY SENSING FILMS, which application is incorporated herein by reference in its entirety.
Background
[0002] Capacitive and resistive type humidity sensors rely on the ability of the sensing material to quickly absorb and desorb water molecules. The absorbed moisture changes the physical properties of the sensing material either by changing its resistance, permittivity, or stress, which can each directly affect the electrical response of the sensor. Bulk polyimide films are often used as the humidity sensing material in many capacitive and resistive humidity sensors. However, humidity sensors using bulk polyimide films typically exhibit an inherent hysteresis due to the adsorption, absorption, diffusion, and desorption properties of the films. Also, such sensors often have a relatively large response time. What would be desirable is a humidity sensor that exhibits a relatively small amount of hysteresis (e.g. 2 Sigma hysteresis of 1% or less) and/or a faster response time.
Summary
[0003] The disclosure generally relates to humidity sensors that exhibit a relatively small amount of hysteresis and/or a faster response time. In some cases, a humidity sensor may include a polymeric humidity sensing layer disposed over an electrode layer. The polymeric humidity sensing layer may include a halogenated layer disposed over the polymeric humidity sensing layer. In some instances, the polymeric humidity sensing layer may, for example, include a polyimide and the halogenated layer may include a monolayer or less than a monolayer of a halogenated material such as a fluorinated material.
[0004] In a particular example of the disclosure, a humidity sensor may include a substrate and an electrode layer that is supported by the substrate. In some cases, the electrode layer may define a first capacitive plate and a second capacitive plate. A non- halogenated humidity sensing layer may be disposed adjacent the electrode layer and may include a number of openings to increase an effective surface area of the non- halogenated humidity sensing layer. A halogenated layer may adjoin the non- halogenated humidity sensing layer.
[0005] In another example of the disclosure, a humidity sensor may include a substrate and an electrode layer that is supported by the substrate. In some cases, the electrode layer may define a first capacitive plate and a second capacitive plate. A polyimide humidity sensing layer may be disposed adjacent the electrode layer. In some instances, the polyimide humidity sensing layer includes a sensing surface and a thickness, and includes a number of openings formed within the sensing surface to increase an effective surface area of the sensing surface. In some cases, the sensing surface of the polyimide humidity sensing layer may be fluorinated to a depth that is less than the thickness of the polyimide humidity sensing layer, resulting in a fluorinated sensing surface.
[0006] In another example of the disclosure, a method of manufacturing a humidity sensor may include forming an electrode layer over a substrate. A non- halogenated polymeric material may be disposed over the electrode layer as a humidity sensing material. With the non-halogenated polymeric material disposed over the electrode layer, the non-halogenated polymeric material may be
hydrogenated to increase the non-halogenated polymeric material's resistance to humidity sensing hysteresis.
[0007] The above summary of some embodiments is not intended to describe each disclosed embodiment or every implementation of the present disclosure. The Figures, and Detailed Description, which follow, more particularly exemplify some of these embodiments.
Brief Description of the Figures
[0008] The disclosure may be more completely understood in consideration of the following detailed description in connection with the accompanying drawings, in which:
[0009] Figure 1 is a schematic cross-sectional side view of an illustrative humidity sensor in accordance with an embodiment of the disclosure;
[0010] Figure 2 is a cross-sectional side view of an illustrative humidity sensor in accordance with an embodiment of the disclosure;
[0011] Figure 3 is a top view of a plate-type humidity sensor, with the humidity sensing material not shown to reveal the electrodes;
[0012] Figure 4 is a schematic cross-sectional side view of the humidity sensor of
Figure 3 taken along line A-A', showing the humidity sensing material;
[0013] Figure 5 is a schematic cross-sectional side view of the humidity sensor of
Figure 3 taken along line A-A', after additional processing of the humidity sensing material;
[0014] Figure 6 is a top view of the humidity sensor of Figure 5;
[0015] Figure 7 is an alternate top view of the humidity sensor of Figure 5;
[0016] Figure 8 is a top view of an interdigitated humidity sensor;
[0017] Figure 9 is a schematic cross-sectional side view of the humidity sensor of
Figure 8 take along line B-B' ;
[0018] Figure 10 is an enlarged cross-sectional side view of a portion of Figure 9 after additional processing of the humidity sensing material; and
[0019] Figure 11 is a flow diagram illustrating an illustrative method for making a humidity sensor.
[0020] While the disclosure is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit the disclosure to the particular embodiments described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the disclosure.
Description
[0021] For the following defined terms, these definitions shall be applied, unless a different definition is given in the claims or elsewhere in this specification.
[0022] All numeric values are herein assumed to be modified by the term "about," whether or not explicitly indicated. The term "about" generally refers to a range of numbers that one of skill in the art would consider equivalent to the recited value (i.e., having the same function or result). In many instances, the terms "about" may include numbers that are rounded to the nearest significant figure.
[0023] The recitation of numerical ranges by endpoints includes all numbers within that range (e.g. 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, and 5).
[0024] As used in this specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term "or" is generally employed in its sense including "and/or" unless the content clearly dictates otherwise.
[0025] It is noted that references in the specification to "an embodiment", "some embodiments", "other embodiments", etc., indicate that the embodiment described may include one or more particular features, structures, and/or characteristics. However, such recitations do not necessarily mean that all embodiments include the particular features, structures, and/or characteristics. Additionally, when particular features, structures, and/or characteristics are described in connection with one embodiment, it should be understood that such features, structures, and/or characteristics may also be used connection with other embodiments whether or not explicitly described unless clearly stated to the contrary.
[0026] The following detailed description should be read with reference to the drawings in which similar structures in different drawings are numbered the same. The drawings, which are not necessarily to scale, depict illustrative embodiments and are not intended to limit the scope of the disclosure. Figure 1 is a schematic cross-sectional side view of an illustrative humidity sensor 10, showing particular features of the humidity sensor 10. The illustrative humidity sensor 10 includes a substrate 12, which in some instances may be a silicon substrate, although other substrates may be used. The illustrative humidity sensor 10 includes an electrode layer 14. As drawn, the humidity sensor 10 is a plate-style humidity sensor in which the electrode layer 14 includes a pair of capacitive plates 14a and 14b. In some cases, however, the humidity sensor 10 may be an interdigitated style humidity sensor in which the electrode layer includes a pair of interdigitated electrodes, or any other suitable humidity sensor configuration as desired.
[0027] The illustrative humidity sensor 10 further includes a humidity sensing material 16 that in some cases may include a first layer 18 and a second layer 20. In some cases, the first layer 18 may be a polymer such as but not limited to a polyimide, a parylene, a benzocyclobutene, and divinylsiloxane bis(benzocyclobutene). In some cases, the first layer 18 may be a polyimide and the second layer 20 may be a halogenated layer that is deposited onto the first layer 18. In some cases, the second layer 20 may be a fluorinated layer, although other halogens such as chlorine and bromine may also be used.
[0028] In some cases, the second layer 20 may not be a separate layer, but may instead represent a fluorination of at least part of an outer surface of the first layer 18. In some instances, for example, the humidity sensing layer 16 may include a sensing surface 22 and an overall thickness that is indicated on Figure 1 as a dimension Di. The second layer 20 may represent a halogenated portion of the first layer 18, and may have a thickness (or perhaps thought of as a halogenation depth) that is indicated as a dimension D2. In some cases, the second layer 20 may represent a portion of the first layer 18 that has been fluorinated to a depth D2 that is less than the thickness Di of the first layer 18.
[0029] In some cases, the second layer 20, representing a halogenation such as fluorination of the sensing surface, may be considered as forming a mono-layer or in some cases a partial mono-layer of the halogen such as fluorine. In some cases, the sensing surface 22 may, for example, be fluorinated by plasma deposition of CxHyFz onto the polyimide humidity sensing layer 16, where x is an integer ranging from 1 to 4, y is an integer ranging from 0 to 2 and z is an integer ranging from 2 to 8. In some instances, the sensing surface 22 may be fluorinated via plasma deposition of one or more of CF4, C2F6, C4F8, CHF3 and CH2F2. In some cases, there may be some displacement of hydrogen within the sensing surface 22. In some cases, particularly during plasma deposition of CxHyFz, there may be deposition of a heterogeneous mixture of fluorocarbons and hydrofluorocarbons on the sensing surface 22.
[0030] Figure 2 is a side view of an illustrative humidity sensor 50. As illustrated, the humidity sensor 50 is a plate-style humidity sensor. The illustrative humidity sensor 50 includes a substrate 52 and a dielectric layer 54 disposed on the substrate 52. In some cases, the substrate 52 may be silicon and the dielectric layer 54 may, for example, be S1O2. A porous platinum layer 56 forms a common plate that is shared by two series capacitors CXI and CX2. Layer 58 is a patterned layer that forms the other plates of capacitors CXI and CX2. For example, layer 58 may be patterned as illustrated in Figure 3 to form a capacitor plate 58A for capacitor CXI and a separate capacitor plate 58B for capacitor CX2. Capacitor plate 58A may be electrically connected to gold pad 64A and capacitor plate 58B may be electrically connected to gold pad 64B. In some cases, the layer 58 may be a titanium tungsten alloy. A passivation layer 60 may be formed over the porous platinum layer 56, and may be a polyimide, for example. A dielectric layer 62 is provided between the porous platinum layer 56 and the titanium tungsten alloy layer 58 and in some cases functions as the humidity sensing layer. The dielectric layer 62 may be halogenated or include a halogenated layer such as a fluorinated layer. Gold pads 64A and 64B permit electrical connections to be made to the humidity sensor 50.
[0031] Figures 3 through 10 provide additional examples of humidity sensors. Figure 3 is a top view of a plate-type humidity sensor 30, with the humidity sensing material not shown to reveal the electrode layer 14, while Figure 4 is a schematic cross- sectional side view of the humidity sensor of Figure 3 taken along line A-A', illustrating a sequence of the substrate 12, the electrode layer 14 and the humidity sensing material 16. Figure 5 is a schematic cross-sectional side view of the humidity sensor of Figure 3 taken along line A-A', after additional processing of the humidity sensing material to create pores. In Figure 5, openings 32 have been formed in the humidity sensing material 16 to increase the porosity and thus the effective surface area of the humidity sensing material 16. This may increase the sensitivity of the humidity sensor. Figure 6 is a top view of the humidity sensor 30 of Figure 5, illustrating that the openings 32 of Figure 5 may include a plurality of pores 34 formed within the humidity sensing material 16. Figure 7 is an alternate top view of the humidity sensor 30 of Figure 5, illustrating that the openings 32 of Figure 5 may include one or more elongated channels 36 formed within the humidity sensing material 16.
[0032] Figure 8 is a top view of an interdigitated humidity sensor 40, while Figure 9 shows a schematic cross-sectional side view of the interdigitated humidity sensor 40 of Figure 8 taken along line B-B' illustrating the sequence of a substrate 12, an electrode layer 14 and a humidity sensing material 16. As can be seen, in this example, the electrode layer includes two interdigitated electrodes. Figure 10 is an enlarged cross- sectional side view of a portion of the interdigitated humidity sensor 40 of Figure 9 after additional processing of the humidity sensing material 16. In Figure 10, openings 42 have been formed in the humidity sensing material 16 to increase the porosity and thus the effective surface area of the humidity sensing material 16. This may increase the sensitivity of the interdigitated humidity sensor.
[0033] Figure 1 1 is a flow diagram showing an illustrative method of manufacturing a humidity sensor such as the humidity sensor 10 (Figure 1), the humidity sensor 30 (Figure 3), the humidity sensor 40 (Figure 8) or the humidity sensor 50 (Figure 2). As generally indicated at block 70, an electrode layer may be formed over a substrate. In some cases, the electrode layer may be formed directly on the substrate while in other cases there may be one or more intervening layers. A non- halogenated polymeric layer may be disposed over the electrode layer, as generally seen at block 72. In some cases, the non-halogenated polymeric layer may be a non- halogenated polyimide layer. In some cases, as optionally shown at block 74, a plurality of openings, such as channels, pores or other void spaces, may be formed within the non-halogenated polymeric layer.
[0034] Next, as generally indicated at block 76, the non-halogenated polymeric layer may be halogenated. In some cases, halogenating the non-halogenated polymeric layer may include a chemical reaction and/or a thermal reaction, such as in a plasma environment. In some cases, halogenating the non-halogenated polymeric material may include an ion implantation process. In some cases, halogenating the non-halogenated polymeric material may include fluorinating the non-halogenated polymeric material, and may for example result in an organofluorine thin film disposed on the non- halogenated polymeric material.
[0035] In some cases, the humidity sensing material may include, beyond those already discussed, a polymer film (polyimides, benzocyclobutene, nylons, etc.), an organosilicate film (Si-O-C polymers, divinylsiloxane bis (benzocyclobutene), etc.), and/or an inorganic film that has been halogenated, such as with fluorine, chlorine or bromine, and/or coated with a halogenated thin film such as a perfluorocarbon or an organofluorine (CxFy) thin film. By halogenating and/or coating the humidity sensing material, the capacitive and/or resistive hysteresis effect of the humidity sensor may be diminished compared to a humidity sensor that uses an untreated humidity sensing material. In general, halogenating the humidity sensing material may make the humidity sensing material more hydrophobic, and thus less susceptible to hysteresis. Fluorination is a favorable method of halogenation due to the availability of a large number of fluorine sources within a typical microelectronics fabrication facility, although chlorine and bromine are also available for use. In some cases, the humidity sensing material may be first etched or otherwise processed to increase its effective surface area before halogenating and/or coating the humidity sensing material. It is contemplated that the halogenation may extend into etched pores, holes, trenches and/or other etched features.
[0036] As noted above, the humidity sensing material may include, for example, polyimides, parylenes, benzocyclobutenes, polyethersulfone, celluloseacetatebutyrate, poly(methyl methacrylate), and/or any other suitable humidity sensing material. Such humidity sensing materials may be improved by modifying their surface. In some cases, the humidity sensing material may be improved by either directly halogenating the humidity sensing material or by depositing an organofluorine (CxFy) thin film on the humidity sensing material. The deposited organofluorine thin film may be on the order of a single monolayer to many monolayers, as desired. It is contemplated that other halocarbons such as haloalkanes may be used to form hydrophobic surfaces. This can be accomplished by one or a combination of chemical reaction, ion implantation and deposition.
[0037] The chemical reaction of fluorine with organic and organosilicate humidity sensing materials can be accomplished with a variety of chemicals. A simple way to create reactive fluorine is in a plasma environment using fluorine containing gases such as F2, NF3, anhydrous HF, S1F4, CIF3, and XeF2. In some cases, these gases may be blended with inert diluents such as Ar, He, and N2 to improve the production of fluorine radicals. Most plasma etch and plasma chemical vapor deposition systems control the temperature of the processed substrate in order to allow for control of the chemical reaction between the fluorine and the humidity sensing material. In some cases, downstream plasmas may be used to eliminate ion interactions with the substrate of the humidity sensor, thus allowing for purely chemical interactions. It is also possible to fluorinate surfaces of polymer films with XeF2 vapors. The SPTS Xactix tool, for example, is specifically built for XeF2 reactions and is used within MEMS manufacturing.
[0038] Ion implantation of fluorine and fluorinated species into the humidity sensing material is also contemplated. For the organic films, low energy ions may be used to keep the ions near the surface of the humidity sensing material. Ion implanters typically use BF3 to implant boron. In fact, ions of BF2 are implanted into the silicon. This can be done by plasma immersion ion implantation. One commercially available tool that produces low energy ions is the Varian VHSta PLAD. Higher energy ions are also possible with other implanters that are configured to directly implant F-ions or BFx-ions into the humidity sensing material. Since these tools typically handle a fluorinated species they can also be plumbed with NF3, SF6, F2, HF, and S1F4. After implantation, the humidity sensing material can be annealed/heat treated in a conventional furnace to allow additional chemical reactions and diffusion of the fluorine.
[0039] Deposition of CxFy and CxHyFz type materials is possible in plasma etch and plasma enhanced CVD tools. Under appropriate conditions, deposition of these species is possible with, for example, one or more of the following gases: CF4, C2F6, C4F8, CHF3, CH2F2, C3F8, C4F6, and C5F8. Additives and diluents may including O2, He, N2, Ar, Hi, NF3, SFe, XeF2, C1F3, F2, SiF4, and/or HF may be added to the fluorocarbon gases in order to modify the chemical species available for deposition. Other halocarbons can be formed by the above processes using other halogenated gases commonly found in a microelectronics or MEMS fabrication facility, such as HC1, CI2, HBr, CIF3, HI, BCh, and BBr3. In some cases, all three interactions may take place in plasma-based tools.
[0040] In one example of the disclosure, divinylsiloxane bis (benzocyclobutene) (DVS-bis-BCB) is etched in O2+F2 plasma which modifies the surface and bulk material properties of BCB. Optimizing the ratio of O2 and F2 may provide greater control of the etch rate of DVS-bis-BCB and the film thickness. DVS-bis-BCB has good adhesion properties and should adhere better than polyimide when exposed to chemical cleaners such as ammonia.
[0041] It should be understood that this disclosure is, in many respects, only illustrative. Changes may be made in details, particularly in matters of shape, size, and arrangement of steps without exceeding the scope of the disclosure. This may include, to the extent that it is appropriate, the use of any of the features of one example embodiment being used in other embodiments.

Claims

What is claimed is:
1. A humidity sensor comprising:
a substrate;
an electrode layer supported by the substrate, the electrode layer defining a first capacitive plate and a second capacitive plate;
a polyimide humidity sensing layer adjacent the electrode layer, the polyimide humidity sensing layer including a sensing surface and a thickness, and further including a number of openings formed within the sensing surface to increase an effective surface area of the sensing surface; and
the sensing surface of the polyimide humidity sensing layer being fluorinated to a depth that is less than the thickness of the polyimide humidity sensing layer, resulting in a fluorinated sensing surface.
2. The humidity sensor of claim 1 , wherein the fluorinated sensing surface is fluorinated by plasma deposition of CxHyFz onto the polyimide humidity sensing layer, where x is an integer ranging from 1 to 4, y is an integer ranging from 0 to 2 and z is an integer ranging from 2 to 8.
3. The humidity sensor of claim 2, wherein the CxHyFz comprises one or more of CF4, C2Fe, C4F8, CHF3 and CH2F2.
4. The humidity sensor of claim 1 , wherein the fluorinated sensing surface comprises a monolayer or a partial monolayer.
5. The humidity sensor of claim 1 , wherein the fluorinated sensing surface comprises a heterogeneous mixture of fluorocarbons and hydrofluorocarbons.
6. The humidity sensor of claim 1 , wherein the electrode layer is adjacent a first side of the polyimide humidity sensing layer, and a porous platinum layer is adjacent a second opposing side of the polyimide humidity sensing layer, wherein the porous platinum layer in combination with the first capacitive plate and the second capacitive plate form a first capacitor and a second capacitor.
7. A humidity sensor comprising:
a substrate;
an electrode layer supported by the substrate, the electrode layer defining a first capacitive plate and a second capacitive plate;
a non-halogenated humidity sensing layer adjacent the electrode layer, the non-halogenated humidity sensing layer including a number of openings to increase an effective surface area of the non-halogenated humidity sensing layer; and
a halogenated layer adjoining the non-halogenated humidity sensing layer.
8. The humidity sensor of claim 7, wherein the halogenated layer represents the halogenation of a surface portion of the non-halogenated humidity sensing layer.
9. The humidity sensor of claim 7, wherein the halogenated layer comprises an organofluorine monolayer.
10. The humidity sensor of claim 7, wherein the non-halogenated humidity sensing layer comprises one or more of a polyimide, a parylene, a benzocyclobutene, and divinylsiloxane bis(benzocyclobutene).
1 1. The humidity sensor of claim 7, wherein the non-halogenated humidity sensing layer comprises a polyimide.
12. The humidity sensor of claim 7, wherein the halogenated layer extends into the number of openings in the non-halogenated humidity sensing layer.
13. A method of manufacturing a humidity sensor, comprising:
forming an electrode layer over a substrate;
disposing a non-halogenated polymeric material over the electrode layer as a humidity sensing material; and
with the non-halogenated polymeric material disposed over the electrode layer, halogenating the non-halogenated polymeric material to increase the non- halogenated polymeric material's resistance to humidity sensing hysteresis.
14. The method of claim 13, further comprising forming a plurality of openings in the non-halogenated polymeric material before halogenating the non- halogenated polymeric material.
15. The method of claim 13, further comprising forming a plurality of pores in the non-halogenated polymeric material before halogenating the non- halogenated polymeric material.
16. The method of claim 13, wherein the non-halogenated polymeric material comprises polyimide.
17. The method of claim 13, wherein halogenating the non-halogenated polymeric material comprises a chemical reaction and/or a thermal reaction in a plasma environment.
18. The method of claim 13, wherein halogenating the non-halogenated polymeric material comprises an ion implantation process.
19. The method of claim 13, wherein halogenating the non-halogenated polymeric material comprises a deposition process.
20. The method of claim 13, wherein halogenating the non-halogenated polymeric material comprises forming an organofluorine thin film on the non- halogenated polymeric material.
EP16708293.2A 2015-02-17 2016-02-17 Humidity sensor and method for manufacturing the sensor Active EP3259581B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562117208P 2015-02-17 2015-02-17
PCT/US2016/018355 WO2016134079A1 (en) 2015-02-17 2016-02-17 Humidity sensor and method for manufacturing the sensor

Publications (2)

Publication Number Publication Date
EP3259581A1 true EP3259581A1 (en) 2017-12-27
EP3259581B1 EP3259581B1 (en) 2020-01-29

Family

ID=56692408

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16708293.2A Active EP3259581B1 (en) 2015-02-17 2016-02-17 Humidity sensor and method for manufacturing the sensor

Country Status (4)

Country Link
US (1) US10677747B2 (en)
EP (1) EP3259581B1 (en)
CN (1) CN107533027B (en)
WO (1) WO2016134079A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10585058B2 (en) 2016-05-13 2020-03-10 Honeywell International Inc. FET based humidity sensor with barrier layer protecting gate dielectric
US10677747B2 (en) 2015-02-17 2020-06-09 Honeywell International Inc. Humidity sensor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3211408B1 (en) * 2016-02-29 2019-04-10 Honeywell International Inc. Relative humidity sensor and method
EP3401674B1 (en) 2017-05-09 2020-07-15 ams International AG Capacitive-type humidity sensor with superhydrophobic top surface and corresponding fabrication method
CN113217313B (en) * 2021-04-22 2022-05-17 北京航空航天大学杭州创新研究院 Response actuating device, preparation method and application

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057823A (en) 1976-07-02 1977-11-08 International Business Machines Corporation Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor
DE2804850C2 (en) 1978-02-04 1983-11-17 Degussa Ag, 6000 Frankfurt Device for measuring the flow rate of gases
US4247299A (en) * 1978-06-19 1981-01-27 Johnson Controls, Inc. Non-conductive polar gas sensing element and detection system
US4429343A (en) 1981-12-03 1984-01-31 Leeds & Northrup Company Humidity sensing element
US4470096A (en) 1982-06-18 1984-09-04 Motorola Inc. Multilayer, fully-trimmable, film-type capacitor and method of adjustment
DE3235135A1 (en) 1982-09-23 1984-03-29 W. Schlafhorst & Co, 4050 Mönchengladbach TENSILE CONNECTING POINT ON CONTINUOUS FIBER SPREADS, METHOD FOR PRODUCING THE CONNECTING POINT AND DEVICE FOR CARRYING OUT THE METHOD
JPS60181645A (en) 1984-02-28 1985-09-17 Sharp Corp Composite sensor and its preparation
US4564882A (en) 1984-08-16 1986-01-14 General Signal Corporation Humidity sensing element
JPS6157847A (en) 1984-08-29 1986-03-24 Sharp Corp Field effect type humidity sensor
EP0393271A1 (en) * 1987-08-08 1990-10-24 The Standard Oil Company Fluoropolymer thin film coatings and method of preparation by plasma polymerization
US5161085A (en) * 1991-02-21 1992-11-03 Yamatake-Honeywell Co., Ltd. Moisture sensitive element and method of manufacturing the same
US5535633A (en) 1992-09-23 1996-07-16 Korr Medical Technologies, Inc. Differential pressure sensor for respiratory monitoring
US5408381A (en) 1994-04-28 1995-04-18 Johnson Service Company Capacitance humidity sensor
KR0175677B1 (en) 1994-06-13 1999-05-15 가네꼬 히사시 Method for preparing a fluoro-containing polyimide film
US5529279A (en) 1994-08-24 1996-06-25 Hewlett-Packard Company Thermal isolation structures for microactuators
SE9600334D0 (en) 1996-01-30 1996-01-30 Radi Medical Systems Combined flow, pressure and temperature sensor
DE59801087D1 (en) 1997-05-15 2001-08-30 Fraunhofer Ges Forschung SENSOR FOR DETERMINING HUMIDITY
EP0911697A3 (en) 1997-10-22 1999-09-15 Interuniversitair Microelektronica Centrum Vzw A fluorinated hard mask for micropatterning of polymers
US6150681A (en) 1998-07-24 2000-11-21 Silicon Microstructures, Inc. Monolithic flow sensor and pressure sensor
US6222376B1 (en) 1999-01-16 2001-04-24 Honeywell International Inc. Capacitive moisture detector and method of making the same
AU6719000A (en) 1999-12-08 2001-06-18 Sensirion Ag Capacitive sensor
JP4717312B2 (en) 2000-02-29 2011-07-06 ジェン−プローブ・インコーポレイテッド Fluid transfer probe
DE10015430C1 (en) 2000-03-28 2001-05-10 Preh Elektro Feinmechanik Capacitive sensor for detecting surface condensation, has passivation layer covering metallized capacitor electrodes covered by hydrophilic layer
US6470741B1 (en) 2000-06-23 2002-10-29 Instrumentarium, Inc. Hot wire anemometer gas flow sensor having improved operation and compensation
JP5350571B2 (en) 2000-08-21 2013-11-27 ダウ グローバル テクノロジーズ エルエルシー Organic silicate resin as hard mask for organic polymer insulating film used in microelectronic device manufacturing
US7154372B2 (en) 2001-01-10 2006-12-26 Sensirion Ag Micromechanical flow sensor with tensile coating
JP2003004683A (en) 2001-06-15 2003-01-08 Denso Corp Capacitance-type humidity sensor
JP4501320B2 (en) 2001-07-16 2010-07-14 株式会社デンソー Capacitive humidity sensor
GR1004106B (en) 2002-01-24 2003-01-13 Εκεφε "Δημοκριτος" Ινστιτουτο Μικροηλεκτρονικης Low power silicon thermal sensors and microfluidic devices based on the use of porous silicon sealed air cavity technology or microchannel technology
US6867602B2 (en) 2002-07-09 2005-03-15 Honeywell International Inc. Methods and systems for capacitive balancing of relative humidity sensors having integrated signal conditioning
US6724612B2 (en) 2002-07-09 2004-04-20 Honeywell International Inc. Relative humidity sensor with integrated signal conditioning
JP2004271461A (en) 2003-03-11 2004-09-30 Denso Corp Capacitance type humidity sensor
CN1203312C (en) 2003-06-12 2005-05-25 东南大学 Capacitance type relative humidity sensor
US7111518B1 (en) 2003-09-19 2006-09-26 Silicon Microstructures, Inc. Extremely low cost pressure sensor realized using deep reactive ion etching
KR100585664B1 (en) 2004-01-20 2006-06-07 엘지전자 주식회사 Thin film humidity sensor and manufacturing method thereof
US6945123B1 (en) 2004-06-28 2005-09-20 The General Electric Company Gas flow sensor having redundant flow sensing capability
US7560788B2 (en) 2004-09-20 2009-07-14 General Electric Company Microelectromechanical system pressure sensor and method for making and using
CN1278120C (en) 2005-02-23 2006-10-04 东南大学 Capacitance type relative moisture sensor
JP4566784B2 (en) 2005-02-24 2010-10-20 株式会社デンソー Humidity sensor device
US7635091B2 (en) 2005-04-21 2009-12-22 Honeywell International Inc. Humidity sensor formed on a ceramic substrate in association with heating components
US7703339B2 (en) 2005-12-09 2010-04-27 Analog Devices, Inc. Flow sensor chip
US7278309B2 (en) 2006-03-01 2007-10-09 Honeywell International Inc. Interdigitated, full wheatstone bridge flow sensor transducer
JP5112639B2 (en) * 2006-03-06 2013-01-09 トウプラスエンジニアリング株式会社 Humidity sensor
US7755466B2 (en) 2006-04-26 2010-07-13 Honeywell International Inc. Flip-chip flow sensor
US7710128B2 (en) 2006-09-09 2010-05-04 Honeywell International Inc. Method and apparatus for controlling the sensitivity and value of a capacitive humidity sensor
US7280927B1 (en) 2006-10-11 2007-10-09 Honeywell International Inc. Method and system for providing a linear signal from a mass airflow and/or liquid flow transducer
WO2008067294A2 (en) 2006-11-27 2008-06-05 University Of Florida Research Foundation, Inc. Microfabrication methods for forming robust isolation and packaging
KR100812996B1 (en) 2006-12-07 2008-03-13 한국전자통신연구원 Micro gas sensor and method for manufacturing the same
ITTO20070190A1 (en) 2007-03-14 2008-09-15 St Microelectronics Srl PROCESS OF MANUFACTURING OF A MEMBRANE OF SEMICONDUCTOR MATERIAL INTEGRATED IN, AND ISOLATED ELECTRICALLY BY, A SUBSTRATE
US7493822B2 (en) 2007-07-05 2009-02-24 Honeywell International Inc. Small gauge pressure sensor using wafer bonding and electrochemical etch stopping
JP5096076B2 (en) 2007-08-24 2012-12-12 日本特殊陶業株式会社 Temperature control mirror, dew point meter, and humidity sensor
US20090071478A1 (en) 2007-09-17 2009-03-19 General Electric Company Ventilator
GB0720905D0 (en) 2007-10-25 2007-12-05 Cambridge Entpr Ltd Shear stress sensors
US7683636B2 (en) 2007-10-26 2010-03-23 Honeywell International Inc. Structure for capacitive balancing of integrated relative humidity sensor
US7924028B2 (en) 2008-03-20 2011-04-12 Honeywell International Inc. Method and system for adjusting characteristics of integrated relative humidity sensor
US7769557B2 (en) 2008-07-01 2010-08-03 Honeywell International Inc. Multi-gas flow sensor with gas specific calibration capability
CN101324539B (en) * 2008-07-22 2011-10-26 浙江大学 Polymer compound resistor type humidity sensitive element with nanometer fiber structure and manufacturing method thereof
KR101094870B1 (en) 2008-12-17 2011-12-15 한국전자통신연구원 humidity sensor and manufacturing method thereof
JP4902679B2 (en) 2009-02-27 2012-03-21 日立オートモティブシステムズ株式会社 Measuring element
JP5687202B2 (en) 2009-11-04 2015-03-18 ローム株式会社 Pressure sensor and pressure sensor manufacturing method
JP5406674B2 (en) 2009-11-06 2014-02-05 日立オートモティブシステムズ株式会社 Thermal fluid flow sensor and manufacturing method thereof
US9126826B2 (en) 2010-01-11 2015-09-08 Elmos Semiconductor Ag Micro-electromechanical semiconductor component and method for the production thereof
US20110252882A1 (en) 2010-04-19 2011-10-20 Honeywell International Inc. Robust sensor with top cap
US9003877B2 (en) 2010-06-15 2015-04-14 Honeywell International Inc. Flow sensor assembly
US8616065B2 (en) 2010-11-24 2013-12-31 Honeywell International Inc. Pressure sensor
JP5649474B2 (en) 2011-01-26 2015-01-07 ローム株式会社 Capacitance type pressure sensor and method of manufacturing capacitance type pressure sensor
CN102213606B (en) 2011-04-08 2013-08-14 中冶赛迪工程技术股份有限公司 Mirror image flow detection method and virtual flowmeter
CN103547915B (en) * 2011-06-08 2015-11-25 3M创新有限公司 Humidity sensor and sensor element thereof
US20130001710A1 (en) 2011-06-29 2013-01-03 Invensense, Inc. Process for a sealed mems device with a portion exposed to the environment
US9027400B2 (en) * 2011-12-02 2015-05-12 Stmicroelectronics Pte Ltd. Tunable humidity sensor with integrated heater
CN102565146B (en) * 2011-12-27 2014-06-04 郑州炜盛电子科技有限公司 Resistance type humidity element and preparation method thereof
FR2991456B1 (en) * 2012-06-04 2023-02-10 Commissariat Energie Atomique CAPACITIVE HUMIDITY SENSOR WITH GRAPHENE ELECTRODE
KR101909131B1 (en) 2012-09-11 2018-12-18 삼성전자주식회사 Ultrasonic transducer and method of manufacturig the same
EP2762864B1 (en) 2013-01-31 2018-08-08 Sensirion AG Membrane-based sensor device and method for manufacturing the same
US9156676B2 (en) 2013-04-09 2015-10-13 Honeywell International Inc. Sensor with isolated diaphragm
KR101772575B1 (en) 2013-07-19 2017-08-30 한국전자통신연구원 Micro Semiconducting Gas Sensors for Low power operation and its fabrication method
US9513242B2 (en) 2014-09-12 2016-12-06 Honeywell International Inc. Humidity sensor
EP3259581B1 (en) 2015-02-17 2020-01-29 Honeywell International Inc. Humidity sensor and method for manufacturing the sensor
EP3244201B1 (en) 2016-05-13 2021-10-27 Honeywell International Inc. Fet based humidity sensor with barrier layer protecting gate dielectric

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10677747B2 (en) 2015-02-17 2020-06-09 Honeywell International Inc. Humidity sensor
US10585058B2 (en) 2016-05-13 2020-03-10 Honeywell International Inc. FET based humidity sensor with barrier layer protecting gate dielectric

Also Published As

Publication number Publication date
WO2016134079A1 (en) 2016-08-25
US20180031510A1 (en) 2018-02-01
US10677747B2 (en) 2020-06-09
CN107533027A (en) 2018-01-02
CN107533027B (en) 2020-05-12
EP3259581B1 (en) 2020-01-29

Similar Documents

Publication Publication Date Title
US10677747B2 (en) Humidity sensor
KR102398461B1 (en) Chemicals to etch multiple stacks
KR102247535B1 (en) Removal methods for high aspect ratio structures
KR102695562B1 (en) Method for Forming Vertical Spacers for Spacer-Defined Patterning
KR102679289B1 (en) Chemistries for tsv/mems/power device etching
JP2019507505A (en) Etching with adjustable selectivity of isotropic silicon and silicon germanium
CN112956000A (en) Boron doped amorphous carbon hardmask and method
CN112740372A (en) Selective material removal
JP2022116000A (en) Systems and methods to form airgaps
US11854817B2 (en) Manufacturing method for deep trench capacitor with scalloped profile
TWI455179B (en) Methods of forming a photoresist-comprising pattern on a substrate
JP2023530554A (en) Removal of isotropic silicon nitride
JP4699719B2 (en) Method for selectively removing High-k material
US8974870B2 (en) Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance
JP2023002798A (en) Method for manufacturing semiconductor device and etching method
CN103377910B (en) The lithographic method of semiconductor device
KR20240027850A (en) Directional removal of metal oxides
KR20240003446A (en) Metal etch in high aspect ratio features
TW201735323A (en) Semiconductor device
KR102392447B1 (en) Methods and system of using organosilicates as patterning films
WO2018111627A1 (en) METHOD FOR PROVIDING A LOW-k SPACER
JPS61251138A (en) Dry etching
US20020187645A1 (en) Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaning
TW518716B (en) Manufacturing method of contact hole
KR20240029780A (en) Selective removal of transition metal nitride materials

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20170912

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20190411

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20190827

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1228855

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200215

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602016028663

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20200129

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200429

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200621

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200430

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200429

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200529

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20200229

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200217

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602016028663

Country of ref document: DE

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1228855

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200129

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200229

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200229

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20201030

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200217

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200229

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200129

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240228

Year of fee payment: 9

Ref country code: GB

Payment date: 20240220

Year of fee payment: 9

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20240226

Year of fee payment: 9