EP3229259B1 - Halogen lamp - Google Patents
Halogen lamp Download PDFInfo
- Publication number
- EP3229259B1 EP3229259B1 EP17158888.2A EP17158888A EP3229259B1 EP 3229259 B1 EP3229259 B1 EP 3229259B1 EP 17158888 A EP17158888 A EP 17158888A EP 3229259 B1 EP3229259 B1 EP 3229259B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- refractive index
- film
- film thickness
- high refractive
- low refractive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052736 halogen Inorganic materials 0.000 title claims description 22
- 150000002367 halogens Chemical class 0.000 title claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims 2
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims 2
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 148
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000010411 cooking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/28—Envelopes; Vessels
- H01K1/32—Envelopes; Vessels provided with coatings on the walls; Vessels or coatings thereon characterised by the material thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0071—Heating devices using lamps for domestic applications
- H05B3/0076—Heating devices using lamps for domestic applications for cooking, e.g. in ovens
Definitions
- Embodiments described herein relate to a halogen lamp.
- a halogen lamp which is used for heating an object to be irradiated with radiation light, is known. Since the halogen lamp is required to have an anti-glare property for a use of heating a space or cooking, or the like, a multilayer film filter having a high visible light shielding effect is formed on an external surface of a bulb. In the multilayer film filter which transmits infrared ray and reflects visible light, high refractive index films and low refractive index films are alternately stacked in order to transmit and shield a selected wavelength band.
- the multilayer film filter is formed to have a thick film thickness of the high refractive index film having a high absorption coefficient of visible light in order to improve an anti-glare level.
- the film thickness of the high refractive index film is too thickened, a stress balance in each film or a boundary between adjacent films is lost and peeling or damage is caused due to heat stress when turning on light, and a phenomenon of generating pinholes is likely to be caused. If the pinholes are generated in the multilayer film filter, the pinholes are scattered as a bright point close to white when turning on the lamp, and thus an appearance of the halogen lamp is damaged.
- An exemplary embodiment provides a halogen lamp which is capable of suppressing generation of the pinholes without deteriorating an anti-glare property.
- EP 2897160 A1 discloses an incandescent lamp with visible light reducing optical film.
- JP 2000260397 A discloses an incandescent lamp with infrared ray reflecting film.
- a halogen lamp according to the present invention is defined in claim 1.
- FIG. 1, FIG. 2 , FIG. 3, and FIG. 4 an exemplary halogen lamp will be described with reference to FIG. 1, FIG. 2 , FIG. 3, and FIG. 4 .
- the halogen lamp 10 is provided with a bulb 2, a first seal portion 11, a second seal portion 12, a first outer lead 14, and a second outer lead 15 as illustrated in FIG. 1 .
- the bulb 2 is made of a transparent and colorless material, and is formed in a cylindrical shape. As the material, for example, quartz glass having a high softening point is exemplified.
- the first seal portion 11 and the second seal portion 12 seal both ends of the bulb 2, and make an inside of the bulb 2 be airtight.
- One end of the first outer lead 14 is buried in the first seal portion 11, and the other end thereof is exposed to the outside of the first seal portion 11.
- One end of the second outer lead 15 is buried in the second seal portion 12, and the other end thereof is exposed to the outside of the second seal portion 12.
- the halogen lamp 10 is further provided with a filament which is not illustrated.
- the filament is disposed inside of the bulb 2.
- the filament is electrically connected to the first outer lead 14, and is electrically connected to the second outer lead 15.
- the filament generates heat and emits light by receiving a voltage being applied through the first outer lead 14 and the second outer lead 15.
- a multilayer film filter 1A is formed on a surface of the bulb 2 and provided with a plurality of low refractive index films 3a and a plurality of high refractive index films 4a.
- the low refractive index films 3a are mainly made of silicon dioxide (SiO 2 ), and the high refractive index films 4a are mainly made of iron (III) oxide (Fe 2 O 3 ).
- the bulb 2 is made of, for example, quartz glass having a high softening point, and is transparent and colorless.
- the multilayer film is formed in a dipping method, a vacuum evaporation method, a sputtering method, or the like, and the low refractive index films 3a and the high refractive index films 4a are alternately stacked about 10 layers.
- odd number layers starting from a first layer directly formed on the surface of the bulb 2 are formed as the low refractive index film 3a
- even number layers starting from a second layer are formed as the high refractive index film 4a.
- SiO 2 which is a main component of the low refractive index film 3a is similar to a component of the bulb 2, by setting the low refractive index film 3a to the first layer, attachment force to a surface of the bulb 2 can be improved.
- SiO 2 since SiO 2 has excellent chemical and thermal resistance, and has a mechanical strength, there is a low possibility of causing peeling or damage even when the low refractive index film 3a is directly formed on the surface of the bulb 2 of which a temperature becomes high.
- FIG. 3 exemplifies a relationship between the number of pinholes being recognized when the halogen lamp 10 is turned on and a pinhole level which is determination criteria for determining whether or not the halogen lamp 10 can be practically used.
- the pinhole is a hole formed on the multilayer film filter 1A, and is recognized on the surface of the bulb 2 as a bright point close to white when the halogen lamp 10 is turned on.
- the pinhole is checked by enlarging imaging the surface of the bulb 2 when the halogen lamp 10 is turned on at 235 V of a rated voltage for three minutes.
- the surface of the bulb 2 is photographed in enlargement on a half circumferential side of a circumference direction of the bulb 2 in a light emission region of one electrode part of the halogen lamp 10 through another electrode part.
- pinholes having a diameter of 0. 4 mm or more are counted.
- a case in which seven or more pinholes are counted is set to one point, a case of five and six pinholes is set to two points, a case of three and four pinholes is set to three points, a case of one and two pinholes is set to four points, a case of zero pinholes are set to five points, and the points are defined as a pinhole level.
- the multilayer film filter 1A is in a level where the filter can be practically used if the pinhole level is two points or more.
- the multilayer film filter 1A can be practically used if the pinhole level is two points or more, but it is desirable that the pinhole level be three points or more in order to look good in an appearance of the lamp when turning on the lamp.
- each of the low refractive index film 3a and the high refractive index film 4a are respectively formed to have the same film thickness.
- a type of the multilayer film filter formed in such a manner is referred to as a comparison example hereinafter.
- the low refractive index film 3a is formed so that the film thickness thereof is greater than the film thickness of the high refractive index film 4a.
- a pinhole level of a sample including the multilayer film filter 1A in which a ratio of the film thicknesses of the low refractive index film 3a with respect to the high refractive index film 4a is changed, is measured. As illustrated in FIG.
- a plurality of samples including the multilayer film filters 1A in which the film thicknesses of the low refractive index films 3a are 118%, 120%, 137%, 141%, 200%, and 240% with respect to the film thickness of the high refractive index film 4a are prepared.
- the pinhole level of the plurality of samples manufactured at each film thickness ratio As a result of measuring the pinhole level of the plurality of samples manufactured at each film thickness ratio, as illustrated in FIG. 4 , it is understood that if the film thickness of the low refractive index film 3a is 120% to 240% of the film thickness of the high refractive index film 4a, the pinhole level is two points or more, and the multilayer film filter 1A can be practically used.
- the pinhole level is shown as five points when the film thickness ratio is 200%, and is shown as three points when the film thickness ratios are 137% and 240%.
- the pinhole levels are shown as five points when the film thickness ratios are 141% and 200%.
- the pinhole level tends to decrease its point as the film thickness ratio is increased when the film thickness ratio is 200% or more.
- the multilayer film filter 1A can achieve a practical use level by making the film thickness of the low refractive index film 3a be thickened as 120% to 240% with respect to the film thickness of the high refr
- the type of the multilayer film filter is not limited to the comparison example exemplified in FIG. 2 , and all of the five layers of the high refractive index film 4a may not be formed to have the same film thickness.
- the low refractive index film 3a may be formed as long as the film thickness thereof is approximately 120% to 240% greater than the film thickness of at least one layer of the high refractive index films 4a which are multiply stacked.
- the exemplary halogen lamp 10 is capable of providing a halogen lamp capable of suppressing generation of pinholes and improving appearance of the lamp.
- FIG. 5 An embodiment of the invention will be described with reference to FIG. 5, FIG. 6 , and FIG. 7 .
- the low refractive index film 3a and the high refractive index film 4a are alternately stacked on the surface of the bulb 2, and an intermediate layer 4a' is inserted to an arbitrary boundary therebetween.
- a film thickness of the intermediate layer 4a' is greater than the film thickness of the high refractive index film 4a.
- the intermediate layer 4a' having a greater film thickness than the film thickness of the high refractive index film 4a is formed as, for example, a sixth layer. All of the five layers of the low refractive index films 3a have the same film thickness, and is formed so that the film thickness thereof is greater than the film thickness of the high refractive index film 4a.
- All of the other four layers of the high refractive index films 4a are formed to have the same film thickness, and the intermediate layer 4a' is formed so that the film thickness thereof is greater than the film thickness of the high refractive index film 4a.
- the intermediate layer 4a' of FIG. 5 is formed to have the greatest film thickness in the multilayer film filter 1B, but is not limited to the embodiment, and may be formed to be thinner than the film thickness of the low refractive index film 3a if the film thickness thereof is greater than another high refractive index film 4a.
- a ratio of the film thickness of the intermediate layer 4a' with respect to the film thickness of the high refractive index film 4a is changed, and the pinhole level is determined.
- a plurality of samples including a multilayer film filters in which the film thicknesses of the intermediate layers 4a' are 105%, 115%, 130%, 160%, 200%, and 240% with respect to the film thickness of the high refractive index film 4a are prepared, and pinhole levels of the plurality of samples are measured.
- the multilayer film filter 1B in FIG. 6 is a multilayer film filter of the same type as the multilayer film filter of the comparison example illustrated in FIG. 2 , and the intermediate layer 4a' is not provided thereto.
- the multilayer film filter 1B is configured with the low refractive index films 3a and the high refractive index films 4a, and the respective five layers thereof are formed to have the same film thickness as each other.
- the film thickness ratio of the low refractive index film 3a and the high refractive index film 4a is equal to 137% of the first embodiment, and causes the film thickness of the intermediate layer 4a' formed as the sixth layer to be changed.
- the pinhole level is three points or more, and the multilayer film filter can be practically used.
- the pinhole level is shown as five points of a peak value when the film thickness ratio of the intermediate layer 4a' is 115% and 130%, is shown as four points when the ratio is 160% and 200%, and is shown as three points when the ratio is 240%.
- the pinhole level tends to decrease its point as the film thickness ratio is increased when the film thickness ratio is 200% or more.
- the multilayer film filter 1B can achieve a practical use level by setting the film thickness ratio of the intermediate layer 4a' to the high refractive index film 4a to 105% to 240%.
- the pinhole level is three points, but the pinhole level can be improved up to five points by inserting the intermediate layer 4a' as the sixth layer.
- the film thickness ratio of the low refractive index film 3a and the high refractive index film 4a is set, so that the pinhole level is decreased in accordance with a specification thereof.
- the multilayer film filter is capable of improving the pinhole level by inserting the thick intermediate layer 4a' thereto.
- the intermediate layer 4a' is not limited to being provided as the sixth layer if the layer is inserted to an arbitrary boundary of the low refractive index films 3a. In the embodiment, it is desirable that the intermediate layer be provided as at least any one of the second layer, a fourth layer, the sixth layer, and an eighth layer.
- the thick intermediate layer 4a' acts as a buffer of stress being generated in each film being stacked or between adjacent films. Therefore, the intermediate layer 4a' is inserted into an arbitrary boundary in the multilayer film except a top layer, and thus generation of pinholes can be suppressed.
- the high refractive index film 4a as the eighth layer of the multilayer film filter 1B of the second embodiment in FIG. 5 is substituted for the intermediate layer 4a'. That is, in the embodiment, as exemplified in FIG. 7 , the plurality of intermediate layers 4a' may be formed at an arbitrary boundary sandwiched between the low refractive index films 3a, and for example, the fourth layer and the eighth layer may be formed as the intermediate layer 4a'. In this case, the plurality of intermediate layers 4a' may be formed to have respective different film thicknesses.
- the number of layers being stacked of the multilayer film filter 1 is not limited to ten layers.
- the number of layers can be appropriately changed according to the type, size, usage, or the like of the halogen lamp 10.
- the multilayer film filter which is capable of suppressing generation of the pinholes and improving good appearance of the lamp, can be provided.
- the multilayer film filter 1 is used for an infrared ray lamp for heating a space and cooking is explained in the embodiment.
- the exemplary embodiment is not limited thereto.
- the filter can be used in order to transmit or shield a selected wavelength band in accordance with a use or a function to be required in an image capturing device, a communication device, or the like.
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Description
- Embodiments described herein relate to a halogen lamp.
- A halogen lamp, which is used for heating an object to be irradiated with radiation light, is known. Since the halogen lamp is required to have an anti-glare property for a use of heating a space or cooking, or the like, a multilayer film filter having a high visible light shielding effect is formed on an external surface of a bulb. In the multilayer film filter which transmits infrared ray and reflects visible light, high refractive index films and low refractive index films are alternately stacked in order to transmit and shield a selected wavelength band.
- It is known that the multilayer film filter is formed to have a thick film thickness of the high refractive index film having a high absorption coefficient of visible light in order to improve an anti-glare level. However, in the multilayer film filter, if the film thickness of the high refractive index film is too thickened, a stress balance in each film or a boundary between adjacent films is lost and peeling or damage is caused due to heat stress when turning on light, and a phenomenon of generating pinholes is likely to be caused. If the pinholes are generated in the multilayer film filter, the pinholes are scattered as a bright point close to white when turning on the lamp, and thus an appearance of the halogen lamp is damaged.
- An exemplary embodiment provides a halogen lamp which is capable of suppressing generation of the pinholes without deteriorating an anti-glare property.
-
EP 2897160 A1 discloses an incandescent lamp with visible light reducing optical film. -
JP 2000260397 A -
-
FIG. 1 is a schematic view illustrating a halogen lamp. -
FIG. 2 is a schematic view illustrating a multilayer film filter. -
FIG. 3 is a table for exemplifying a relationship of the number of pinholes and determination criteria (pinhole level) of a lamp which can be practically used. -
FIG. 4 is a graph for exemplifying characteristics of the pinhole level. -
FIG. 5 is a schematic view illustrating a multilayer film filter which exemplifies an embodiment of the invention. -
FIG. 6 is a graph for exemplifying characteristics of a pinhole level. -
FIG. 7 is a schematic view illustrating a multilayer film filter which exemplifies a modification of the embodiment. - A halogen lamp according to the present invention is defined in
claim 1. - Hereinafter, embodiments will be described with reference to drawings.
- Moreover, the drawings are schematic or conceptual, and a dimension, a ratio, and the like of each part are not necessarily same as those in actual. Also, same numerals are given to the same configurations and operation effects in each drawing, and descriptions thereof will be omitted.
- Hereinafter, an exemplary halogen lamp will be described with reference to
FIG. 1, FIG. 2 ,FIG. 3, and FIG. 4 . - The
halogen lamp 10 is provided with abulb 2, afirst seal portion 11, asecond seal portion 12, a firstouter lead 14, and a secondouter lead 15 as illustrated inFIG. 1 . Thebulb 2 is made of a transparent and colorless material, and is formed in a cylindrical shape. As the material, for example, quartz glass having a high softening point is exemplified. Thefirst seal portion 11 and thesecond seal portion 12 seal both ends of thebulb 2, and make an inside of thebulb 2 be airtight. One end of the firstouter lead 14 is buried in thefirst seal portion 11, and the other end thereof is exposed to the outside of thefirst seal portion 11. One end of the secondouter lead 15 is buried in thesecond seal portion 12, and the other end thereof is exposed to the outside of thesecond seal portion 12. Thehalogen lamp 10 is further provided with a filament which is not illustrated. The filament is disposed inside of thebulb 2. The filament is electrically connected to the firstouter lead 14, and is electrically connected to the secondouter lead 15. The filament generates heat and emits light by receiving a voltage being applied through the firstouter lead 14 and the secondouter lead 15. - As illustrated in
FIG. 2 , amultilayer film filter 1A according to the example is formed on a surface of thebulb 2 and provided with a plurality of lowrefractive index films 3a and a plurality of highrefractive index films 4a. The lowrefractive index films 3a are mainly made of silicon dioxide (SiO2), and the highrefractive index films 4a are mainly made of iron (III) oxide (Fe2O3). Thebulb 2 is made of, for example, quartz glass having a high softening point, and is transparent and colorless. - The multilayer film is formed in a dipping method, a vacuum evaporation method, a sputtering method, or the like, and the low
refractive index films 3a and the highrefractive index films 4a are alternately stacked about 10 layers. In the embodiment, odd number layers starting from a first layer directly formed on the surface of thebulb 2 are formed as the lowrefractive index film 3a, and even number layers starting from a second layer are formed as the highrefractive index film 4a. Since SiO2 which is a main component of the lowrefractive index film 3a is similar to a component of thebulb 2, by setting the lowrefractive index film 3a to the first layer, attachment force to a surface of thebulb 2 can be improved. In addition, since SiO2 has excellent chemical and thermal resistance, and has a mechanical strength, there is a low possibility of causing peeling or damage even when the lowrefractive index film 3a is directly formed on the surface of thebulb 2 of which a temperature becomes high. -
FIG. 3 exemplifies a relationship between the number of pinholes being recognized when thehalogen lamp 10 is turned on and a pinhole level which is determination criteria for determining whether or not thehalogen lamp 10 can be practically used. The pinhole is a hole formed on themultilayer film filter 1A, and is recognized on the surface of thebulb 2 as a bright point close to white when thehalogen lamp 10 is turned on. The pinhole is checked by enlarging imaging the surface of thebulb 2 when thehalogen lamp 10 is turned on at 235 V of a rated voltage for three minutes. The surface of thebulb 2 is photographed in enlargement on a half circumferential side of a circumference direction of thebulb 2 in a light emission region of one electrode part of thehalogen lamp 10 through another electrode part. - From a photo which is photographed in enlargement, pinholes having a diameter of 0. 4 mm or more are counted. A case in which seven or more pinholes are counted is set to one point, a case of five and six pinholes is set to two points, a case of three and four pinholes is set to three points, a case of one and two pinholes is set to four points, a case of zero pinholes are set to five points, and the points are defined as a pinhole level. The
multilayer film filter 1A is in a level where the filter can be practically used if the pinhole level is two points or more. Themultilayer film filter 1A can be practically used if the pinhole level is two points or more, but it is desirable that the pinhole level be three points or more in order to look good in an appearance of the lamp when turning on the lamp. - As exemplified in
FIG. 2 , all of five layers of each of the lowrefractive index film 3a and the highrefractive index film 4a are respectively formed to have the same film thickness. A type of the multilayer film filter formed in such a manner is referred to as a comparison example hereinafter. In addition, the lowrefractive index film 3a is formed so that the film thickness thereof is greater than the film thickness of the highrefractive index film 4a. Here, a pinhole level of a sample including themultilayer film filter 1A in which a ratio of the film thicknesses of the lowrefractive index film 3a with respect to the highrefractive index film 4a is changed, is measured. As illustrated inFIG. 4 , a plurality of samples including themultilayer film filters 1A in which the film thicknesses of the lowrefractive index films 3a are 118%, 120%, 137%, 141%, 200%, and 240% with respect to the film thickness of the highrefractive index film 4a are prepared. - As a result of measuring the pinhole level of the plurality of samples manufactured at each film thickness ratio, as illustrated in
FIG. 4 , it is understood that if the film thickness of the lowrefractive index film 3a is 120% to 240% of the film thickness of the highrefractive index film 4a, the pinhole level is two points or more, and themultilayer film filter 1A can be practically used. The pinhole level is shown as five points when the film thickness ratio is 200%, and is shown as three points when the film thickness ratios are 137% and 240%. The pinhole levels are shown as five points when the film thickness ratios are 141% and 200%. The pinhole level tends to decrease its point as the film thickness ratio is increased when the film thickness ratio is 200% or more. Themultilayer film filter 1A can achieve a practical use level by making the film thickness of the lowrefractive index film 3a be thickened as 120% to 240% with respect to the film thickness of the highrefractive index film 4a. - In addition, the type of the multilayer film filter is not limited to the comparison example exemplified in
FIG. 2 , and all of the five layers of the highrefractive index film 4a may not be formed to have the same film thickness. The lowrefractive index film 3a may be formed as long as the film thickness thereof is approximately 120% to 240% greater than the film thickness of at least one layer of the highrefractive index films 4a which are multiply stacked. - The
exemplary halogen lamp 10 is capable of providing a halogen lamp capable of suppressing generation of pinholes and improving appearance of the lamp. - Next, an embodiment of the invention will be described with reference to
FIG. 5, FIG. 6 , andFIG. 7 . - In a
multilayer film filter 1B according to the embodiment, the lowrefractive index film 3a and the highrefractive index film 4a are alternately stacked on the surface of thebulb 2, and anintermediate layer 4a' is inserted to an arbitrary boundary therebetween. A film thickness of theintermediate layer 4a' is greater than the film thickness of the highrefractive index film 4a. In the embodiment, theintermediate layer 4a' having a greater film thickness than the film thickness of the highrefractive index film 4a is formed as, for example, a sixth layer. All of the five layers of the lowrefractive index films 3a have the same film thickness, and is formed so that the film thickness thereof is greater than the film thickness of the highrefractive index film 4a. All of the other four layers of the highrefractive index films 4a are formed to have the same film thickness, and theintermediate layer 4a' is formed so that the film thickness thereof is greater than the film thickness of the highrefractive index film 4a. Theintermediate layer 4a' ofFIG. 5 is formed to have the greatest film thickness in themultilayer film filter 1B, but is not limited to the embodiment, and may be formed to be thinner than the film thickness of the lowrefractive index film 3a if the film thickness thereof is greater than another highrefractive index film 4a. - In the embodiment, a ratio of the film thickness of the
intermediate layer 4a' with respect to the film thickness of the highrefractive index film 4a is changed, and the pinhole level is determined. As exemplified inFIG. 6 , a plurality of samples including a multilayer film filters in which the film thicknesses of theintermediate layers 4a' are 105%, 115%, 130%, 160%, 200%, and 240% with respect to the film thickness of the highrefractive index film 4a are prepared, and pinhole levels of the plurality of samples are measured. Themultilayer film filter 1B inFIG. 6 is a multilayer film filter of the same type as the multilayer film filter of the comparison example illustrated inFIG. 2 , and theintermediate layer 4a' is not provided thereto. Themultilayer film filter 1B is configured with the lowrefractive index films 3a and the highrefractive index films 4a, and the respective five layers thereof are formed to have the same film thickness as each other. In the second embodiment, the film thickness ratio of the lowrefractive index film 3a and the highrefractive index film 4a is equal to 137% of the first embodiment, and causes the film thickness of theintermediate layer 4a' formed as the sixth layer to be changed. - As a result of measuring the pinhole level by changing the film thickness of the
intermediate layer 4a' with respect to the film thickness of the highrefractive index film 4a, as illustrated inFIG. 6 , if the film thickness of theintermediate layer 4a' is 105% to 240% of the film thickness of the highrefractive index film 4a, the pinhole level is three points or more, and the multilayer film filter can be practically used. The pinhole level is shown as five points of a peak value when the film thickness ratio of theintermediate layer 4a' is 115% and 130%, is shown as four points when the ratio is 160% and 200%, and is shown as three points when the ratio is 240%. The pinhole level tends to decrease its point as the film thickness ratio is increased when the film thickness ratio is 200% or more. Themultilayer film filter 1B can achieve a practical use level by setting the film thickness ratio of theintermediate layer 4a' to the highrefractive index film 4a to 105% to 240%. - In the exemplary halogen lamp, when the film thickness ratio of the low
refractive index film 3a and the highrefractive index film 4a is a base type of 137%, the pinhole level is three points, but the pinhole level can be improved up to five points by inserting theintermediate layer 4a' as the sixth layer. For example, when thehalogen lamp 10 is used as a heater, the film thickness ratio of the lowrefractive index film 3a and the highrefractive index film 4a is set, so that the pinhole level is decreased in accordance with a specification thereof. At this time, the multilayer film filter is capable of improving the pinhole level by inserting the thickintermediate layer 4a' thereto. - The
intermediate layer 4a' is not limited to being provided as the sixth layer if the layer is inserted to an arbitrary boundary of the lowrefractive index films 3a. In the embodiment, it is desirable that the intermediate layer be provided as at least any one of the second layer, a fourth layer, the sixth layer, and an eighth layer. The thickintermediate layer 4a' acts as a buffer of stress being generated in each film being stacked or between adjacent films. Therefore, theintermediate layer 4a' is inserted into an arbitrary boundary in the multilayer film except a top layer, and thus generation of pinholes can be suppressed. - In addition, a modification of the embodiment will be described with reference to
FIG. 7 . As exemplified inFIG. 7 , in amultilayer film filter 1C according to the modification of the embodiment, the highrefractive index film 4a as the eighth layer of themultilayer film filter 1B of the second embodiment inFIG. 5 is substituted for theintermediate layer 4a'. That is, in the embodiment, as exemplified inFIG. 7 , the plurality ofintermediate layers 4a' may be formed at an arbitrary boundary sandwiched between the lowrefractive index films 3a, and for example, the fourth layer and the eighth layer may be formed as theintermediate layer 4a'. In this case, the plurality ofintermediate layers 4a' may be formed to have respective different film thicknesses. - In the embodiment, the number of layers being stacked of the
multilayer film filter 1 is not limited to ten layers. The number of layers can be appropriately changed according to the type, size, usage, or the like of thehalogen lamp 10. - According to the exemplary embodiment, the multilayer film filter, which is capable of suppressing generation of the pinholes and improving good appearance of the lamp, can be provided.
- Moreover, an example in which the
multilayer film filter 1 is used for an infrared ray lamp for heating a space and cooking is explained in the embodiment. However, the exemplary embodiment is not limited thereto. For example, the filter can be used in order to transmit or shield a selected wavelength band in accordance with a use or a function to be required in an image capturing device, a communication device, or the like. - While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the invention as defined by
claim 1.
Claims (1)
- A halogen lamp comprising:a bulb; anda multilayer film that is formed on an external surface of the bulb,characterized in that the multilayer film consists of a plurality of high refractive index films (4a) and a plurality of low refractive index films (3a),wherein the low refractive index films (3a) all have the same film thickness and are alternately stacked with the high refractive index films, and the low refractive index films (3a) are formed so that the thickness of each of the low refractive index films (3a) is greater than that of at least one of the high refractive index films (4a),wherein the film thickness of the low refractive index film (3a) is 120% to 240% of a film thickness of at least one layer of the high refractive index films (4a),wherein the film thickness of at least one layer of the high refractive index films (4a') is 105% to 240% of the film thickness of another high refractive index film (4a), and the at least one layer (4a') of the high refractive index films (4a) is inserted into an arbitrary boundary in the multilayer film in which the high refractive index films (4a) and the low refractive films are alternately stacked, andwherein the low refractive index film (3a) is mainly made of silicon dioxide (SiO2), and the high refractive index film (4a) is mainly made of iron (III) ferric oxide (Fe2O3).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016069886 | 2016-03-31 | ||
JP2016187511A JP2017188415A (en) | 2016-03-31 | 2016-09-26 | Halogen lamp |
Publications (2)
Publication Number | Publication Date |
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EP3229259A1 EP3229259A1 (en) | 2017-10-11 |
EP3229259B1 true EP3229259B1 (en) | 2019-07-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP17158888.2A Active EP3229259B1 (en) | 2016-03-31 | 2017-03-02 | Halogen lamp |
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EP (1) | EP3229259B1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04315764A (en) * | 1991-04-12 | 1992-11-06 | Tokyo Ohka Kogyo Co Ltd | Lamp |
JP2000260397A (en) * | 1999-03-10 | 2000-09-22 | Stanley Electric Co Ltd | Incandescent lamp with infrared ray reflecting film |
JP3736409B2 (en) * | 2001-09-26 | 2006-01-18 | ウシオ電機株式会社 | Light source for sugar content measurement |
JP2015076334A (en) * | 2013-10-10 | 2015-04-20 | 東芝ライテック株式会社 | Lamp |
-
2017
- 2017-03-02 EP EP17158888.2A patent/EP3229259B1/en active Active
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Title |
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None * |
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EP3229259A1 (en) | 2017-10-11 |
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