EP3198603A4 - Magnetic field-assisted memory operation - Google Patents

Magnetic field-assisted memory operation Download PDF

Info

Publication number
EP3198603A4
EP3198603A4 EP15843190.8A EP15843190A EP3198603A4 EP 3198603 A4 EP3198603 A4 EP 3198603A4 EP 15843190 A EP15843190 A EP 15843190A EP 3198603 A4 EP3198603 A4 EP 3198603A4
Authority
EP
European Patent Office
Prior art keywords
magnetic field
memory operation
assisted memory
assisted
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15843190.8A
Other languages
German (de)
French (fr)
Other versions
EP3198603B1 (en
EP3198603A1 (en
Inventor
Helia Naeimi
Shih-Lien L. LU
Shigeki Tomishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of EP3198603A1 publication Critical patent/EP3198603A1/en
Publication of EP3198603A4 publication Critical patent/EP3198603A4/en
Application granted granted Critical
Publication of EP3198603B1 publication Critical patent/EP3198603B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
EP15843190.8A 2014-09-26 2015-08-26 Magnetic field-assisted memory operation Active EP3198603B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/499,067 US9747967B2 (en) 2014-09-26 2014-09-26 Magnetic field-assisted memory operation
PCT/US2015/047014 WO2016048560A1 (en) 2014-09-26 2015-08-26 Magnetic field-assisted memory operation

Publications (3)

Publication Number Publication Date
EP3198603A1 EP3198603A1 (en) 2017-08-02
EP3198603A4 true EP3198603A4 (en) 2018-05-30
EP3198603B1 EP3198603B1 (en) 2019-07-31

Family

ID=55581770

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15843190.8A Active EP3198603B1 (en) 2014-09-26 2015-08-26 Magnetic field-assisted memory operation

Country Status (7)

Country Link
US (2) US9747967B2 (en)
EP (1) EP3198603B1 (en)
JP (1) JP6330970B2 (en)
KR (1) KR102240162B1 (en)
CN (1) CN106605268B (en)
TW (1) TWI592928B (en)
WO (1) WO2016048560A1 (en)

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US10600477B2 (en) * 2018-04-23 2020-03-24 Arm Limited Coupling compensation circuitry
US10573364B1 (en) * 2018-12-13 2020-02-25 Nxp Usa, Inc. Magnetic disturb diagnostic system for MRAM
JP2020149748A (en) 2019-03-14 2020-09-17 キオクシア株式会社 Reliability evaluation device
US20220108158A1 (en) * 2020-10-02 2022-04-07 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
CN112835522A (en) * 2021-02-02 2021-05-25 致真存储(北京)科技有限公司 Video data access device and method based on nonvolatile memory
CN113672053A (en) * 2021-08-23 2021-11-19 浙江大学 Editable readable and writable data memory based on mechanical structure
US20230297283A1 (en) * 2022-03-21 2023-09-21 Everspin Technologies, Inc. Persistent xspi stt-mram with optional erase operation

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US20140119106A1 (en) * 2012-10-25 2014-05-01 Samsung Electronics Co., Ltd. Magnetic memory devices and methods of operating the same

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JP5193419B2 (en) * 2005-10-28 2013-05-08 株式会社東芝 Spin injection magnetic random access memory and writing method thereof
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US8837209B2 (en) * 2010-03-05 2014-09-16 Hitachi, Ltd. Magnetic memory cell and magnetic random access memory
JP2012238811A (en) 2011-05-13 2012-12-06 Toshiba Corp Semiconductor non-volatile memory device and method of manufacturing the same
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US8638596B2 (en) 2011-07-25 2014-01-28 Qualcomm Incorporated Non-volatile memory saving cell information in a non-volatile memory array
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TWI451248B (en) 2012-01-13 2014-09-01 Phison Electronics Corp Data protecting method, memory controller and memory storage apparatus
US8854870B2 (en) 2012-03-13 2014-10-07 Honeywell International Inc. Magnetoresistive random access memory (MRAM) die including an integrated magnetic security structure
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US20080247098A1 (en) * 2007-03-09 2008-10-09 Nve Corporation Stressed magnetoresistive tamper detection devices
US20140119106A1 (en) * 2012-10-25 2014-05-01 Samsung Electronics Co., Ltd. Magnetic memory devices and methods of operating the same

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Title
See also references of WO2016048560A1 *

Also Published As

Publication number Publication date
KR20170033383A (en) 2017-03-24
US20160093355A1 (en) 2016-03-31
JP2017535907A (en) 2017-11-30
JP6330970B2 (en) 2018-05-30
US20180025764A1 (en) 2018-01-25
CN106605268B (en) 2020-09-11
TW201626380A (en) 2016-07-16
WO2016048560A1 (en) 2016-03-31
EP3198603B1 (en) 2019-07-31
TWI592928B (en) 2017-07-21
US9747967B2 (en) 2017-08-29
KR102240162B1 (en) 2021-04-14
EP3198603A1 (en) 2017-08-02
CN106605268A (en) 2017-04-26

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