EP3198603A4 - Magnetic field-assisted memory operation - Google Patents

Magnetic field-assisted memory operation Download PDF

Info

Publication number
EP3198603A4
EP3198603A4 EP15843190.8A EP15843190A EP3198603A4 EP 3198603 A4 EP3198603 A4 EP 3198603A4 EP 15843190 A EP15843190 A EP 15843190A EP 3198603 A4 EP3198603 A4 EP 3198603A4
Authority
EP
European Patent Office
Prior art keywords
magnetic field
memory operation
assisted memory
assisted
operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP15843190.8A
Other languages
German (de)
French (fr)
Other versions
EP3198603A1 (en
Inventor
Helia Naeimi
Shih-Lien L. LU
Shigeki Tomishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US14/499,067 priority Critical patent/US9747967B2/en
Application filed by Intel Corp filed Critical Intel Corp
Priority to PCT/US2015/047014 priority patent/WO2016048560A1/en
Publication of EP3198603A1 publication Critical patent/EP3198603A1/en
Publication of EP3198603A4 publication Critical patent/EP3198603A4/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1653Address circuits or decoders
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1659Cell access
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1673Reading or sensing circuits or methods
EP15843190.8A 2014-09-26 2015-08-26 Magnetic field-assisted memory operation Pending EP3198603A4 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/499,067 US9747967B2 (en) 2014-09-26 2014-09-26 Magnetic field-assisted memory operation
PCT/US2015/047014 WO2016048560A1 (en) 2014-09-26 2015-08-26 Magnetic field-assisted memory operation

Publications (2)

Publication Number Publication Date
EP3198603A1 EP3198603A1 (en) 2017-08-02
EP3198603A4 true EP3198603A4 (en) 2018-05-30

Family

ID=55581770

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15843190.8A Pending EP3198603A4 (en) 2014-09-26 2015-08-26 Magnetic field-assisted memory operation

Country Status (7)

Country Link
US (2) US9747967B2 (en)
EP (1) EP3198603A4 (en)
JP (1) JP6330970B2 (en)
KR (1) KR20170033383A (en)
CN (1) CN106605268A (en)
TW (1) TWI592928B (en)
WO (1) WO2016048560A1 (en)

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US20140119106A1 (en) * 2012-10-25 2014-05-01 Samsung Electronics Co., Ltd. Magnetic memory devices and methods of operating the same

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US6785092B2 (en) * 2001-07-24 2004-08-31 Seagate Technology Llc White head for high anisotropy media
US7159120B2 (en) 2001-11-19 2007-01-02 Good Technology, Inc. Method and system for protecting data within portable electronic devices
ES2280839T3 (en) * 2002-10-03 2007-09-16 Koninklijke Philips Electronics N.V. Storage system that uses an electromagnet arrangement.
WO2004055824A2 (en) 2002-12-18 2004-07-01 Koninklijke Philips Electronics N.V. Method and device for protection of an mram device against tampering
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US7164611B2 (en) 2004-10-26 2007-01-16 Micron Technology, Inc. Data retention kill function
KR100604913B1 (en) 2004-10-28 2006-07-28 삼성전자주식회사 Magnetoresistive RAM having multi-bit cell array configuration
DE602004024322D1 (en) 2004-12-15 2010-01-07 St Microelectronics Res & Dev A device for detection of computer users
JP5193419B2 (en) * 2005-10-28 2013-05-08 株式会社東芝 Spin injection magnetic random access memory and the write process
US7577017B2 (en) * 2006-01-20 2009-08-18 Industrial Technology Research Institute High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
GB2442023B (en) 2006-09-13 2011-03-02 Advanced Risc Mach Ltd Memory access security management
US7877563B2 (en) 2006-12-07 2011-01-25 International Business Machines Corporation Programmable memory device security
US7873803B2 (en) 2007-09-25 2011-01-18 Sandisk Corporation Nonvolatile memory with self recovery
US8041912B2 (en) 2007-09-28 2011-10-18 Macronix International Co., Ltd. Memory devices with data protection
US7577020B2 (en) * 2007-10-01 2009-08-18 Shine Chung System and method for reading multiple magnetic tunnel junctions with a single select transistor
US8659852B2 (en) * 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US8315876B2 (en) 2008-05-09 2012-11-20 Plantronics, Inc. Headset wearer identity authentication with voice print or speech recognition
US8370641B2 (en) 2008-05-24 2013-02-05 Via Technologies, Inc. Initialization of a microprocessor providing for execution of secure code
JP5688081B2 (en) * 2009-07-10 2015-03-25 シーゲイト テクノロジー エルエルシー Non-volatile memory array having a resistance sensing element for block erase and the one-way write
US9519772B2 (en) 2008-11-26 2016-12-13 Free Stream Media Corp. Relevancy improvement through targeting of information based on data gathered from a networked device associated with a security sandbox of a client device
US7581326B1 (en) 2008-12-31 2009-09-01 Lockheed Martin Corporation Optical solid-state heading sensor
US9092649B2 (en) 2009-03-02 2015-07-28 Macronix International Co., Ltd. Data protecting method capable of effectively recording protection information and memory using thereof
US8239663B2 (en) 2009-05-30 2012-08-07 Lsi Corporation System and method for maintaining the security of memory contents and computer architecture employing the same
EP2270708A1 (en) 2009-06-29 2011-01-05 Thomson Licensing Data security in solid state memory
JP5461683B2 (en) * 2010-03-05 2014-04-02 株式会社日立製作所 The magnetic memory cell and magnetic random access memory
JP2012238811A (en) 2011-05-13 2012-12-06 Toshiba Corp Semiconductor non-volatile memory device and method of manufacturing the same
US8732195B2 (en) 2012-06-13 2014-05-20 Opus Deli, Inc. Multi-media management, streaming, and electronic commerce techniques implemented over a computer network
US8638596B2 (en) 2011-07-25 2014-01-28 Qualcomm Incorporated Non-volatile memory saving cell information in a non-volatile memory array
JP5814680B2 (en) * 2011-07-29 2015-11-17 株式会社東芝 Magnetoresistive element and a magnetic memory
TWI451248B (en) 2012-01-13 2014-09-01 Phison Electronics Corp Data protecting method, memory controller and memory storage apparatus
US8854870B2 (en) 2012-03-13 2014-10-07 Honeywell International Inc. Magnetoresistive random access memory (MRAM) die including an integrated magnetic security structure
WO2013147831A1 (en) 2012-03-30 2013-10-03 Intel Corporation Spin transfer torque based memory elements for programmable device arrays
WO2013154564A1 (en) 2012-04-12 2013-10-17 Intel Corporation Selector for low voltage embedded memory
US8467770B1 (en) 2012-08-21 2013-06-18 Mourad Ben Ayed System for securing a mobile terminal
US9131381B1 (en) 2012-10-26 2015-09-08 Facebook, Inc. Mobile device auto wipe
EP2741295B1 (en) 2012-12-04 2016-03-02 Imec Spin transfer torque magnetic memory device
US9166150B2 (en) 2012-12-21 2015-10-20 Intel Corporation Electric field enhanced spin transfer torque memory (STTM) device
US20150071432A1 (en) * 2013-09-09 2015-03-12 Qualcomm Incorporated Physically unclonable function based on resistivity of magnetoresistive random-access memory magnetic tunnel junctions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080247098A1 (en) * 2007-03-09 2008-10-09 Nve Corporation Stressed magnetoresistive tamper detection devices
US20140119106A1 (en) * 2012-10-25 2014-05-01 Samsung Electronics Co., Ltd. Magnetic memory devices and methods of operating the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016048560A1 *

Also Published As

Publication number Publication date
CN106605268A (en) 2017-04-26
WO2016048560A1 (en) 2016-03-31
JP2017535907A (en) 2017-11-30
TWI592928B (en) 2017-07-21
US20160093355A1 (en) 2016-03-31
US9747967B2 (en) 2017-08-29
KR20170033383A (en) 2017-03-24
US20180025764A1 (en) 2018-01-25
JP6330970B2 (en) 2018-05-30
TW201626380A (en) 2016-07-16
EP3198603A1 (en) 2017-08-02

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RIN1 Information on inventor provided before grant (corrected)

Inventor name: NAEIMI, HELIA

Inventor name: LU, SHIH-LIEN L.

Inventor name: TOMISHIMA, SHIGEKI