EP3194991A1 - Capteur magnétique à effet hall du type amélioré et matrice comprenant une pluralité desdits capteurs magnétiques à effet hall - Google Patents

Capteur magnétique à effet hall du type amélioré et matrice comprenant une pluralité desdits capteurs magnétiques à effet hall

Info

Publication number
EP3194991A1
EP3194991A1 EP15788186.3A EP15788186A EP3194991A1 EP 3194991 A1 EP3194991 A1 EP 3194991A1 EP 15788186 A EP15788186 A EP 15788186A EP 3194991 A1 EP3194991 A1 EP 3194991A1
Authority
EP
European Patent Office
Prior art keywords
diodes
magnetic sensor
hall effect
semiconductor substrate
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15788186.3A
Other languages
German (de)
English (en)
Inventor
Daniele PERENZONI
Lucio Pancheri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fondazione Bruno Kessler
Original Assignee
Fondazione Bruno Kessler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fondazione Bruno Kessler filed Critical Fondazione Bruno Kessler
Publication of EP3194991A1 publication Critical patent/EP3194991A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0088—Arrangements or instruments for measuring magnetic variables use of bistable or switching devices, e.g. Reed-switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/077—Vertical Hall-effect devices

Definitions

  • the invention concerns a Hall effect magnetic sensor of the improved type suited to measure the intensity of the magnetic field in which said sensor is immersed.
  • the invention concerns also a matrix comprising a plurality of said Hall effect magnetic sensors of the improved type positioned side by side.
  • sensors of the magnetoresistive type comprising at least one conductor element with an electric resistance that is variable depending on the intensity of the magnetic field in which the conductor element is immersed.
  • one of the most used methods for determining the intensity of a magnetic field consists of a measurement of the vectorial type that exploits the effect called "Hall effect" in technical jargon.
  • said Hall effect can be defined as the determination of a difference in potential on the opposite sides of an electric conductor, due to a magnetic field that is perpendicular to the electric current flowing within the same conductor.
  • the value of said difference in potential depends on the intensity of said magnetic field.
  • the polarity of said difference in potential makes it possible to define also the direction of the same magnetic field.
  • the magnetic sensors that exploit said Hall effect substantially comprise a conductor element, to the first two opposite ends of which a difference in potential is applied. Said difference in potential induces a current in the conductor element which, in the absence of a magnetic field, flows along the shortest rectilinear section joining said two first opposite ends.
  • these Hall effect magnetic sensors were immersed in a magnetic field having field lines perpendicular to the direction of said current, the latter would be subjected to a deflection orthogonal both to said rectilinear section and to the direction of the magnetic field lines. The direction of said deflection depends on the direction of the magnetic field lines to be measured.
  • CMOS complementary metal-oxide-semiconductor
  • the CMOS Hall effect magnetic sensors comprise a semiconductor substrate A that in turn, as schematically represented in Figure 1 a illustrating the known art, includes a first layer A1 subjected to doping of a first type, p or n, above which a second layer A2 is defined, called “well” in technical jargon and subjected to doping of the opposite type, n or p, with respect to said first layer A1.
  • Four metallic contacts B1 , B2, B3 and B4 arranged at the level of each end of a cross are defined on the second layer A2, as can be observed in Figure 1 b illustrating the known art.
  • a difference in potential is applied to a first pair of metallic contacts opposite each other B1 and B2, in such a way as to induce a current flow between them, and the difference in potential generated due to the Hall effect when the sensor is immersed in a magnetic field is measured on the second pair of metallic contacts B3 and B4.
  • said type of Hall effect magnetic sensors made with CMOS technology poses an important drawback.
  • This drawback in fact, is represented by the fact that among the various metallic contacts B1 , B2, B3 and B4 provided on the second layer A2 there are intrinsic resistive elements that determine the appearance of a thermal noise that is not negligible.
  • the presence of said thermal noise causes the increase of the minimum sensitivity threshold of the CMOS Hall effect magnetic sensors.
  • the CMOS magnetic sensors of the known art are not capable of detecting the presence of magnetic fields whose intensity is below said minimum threshold. For this reason, said CMOS magnetic sensors cannot be used for certain applications that, on the contrary, require that also low-intensity magnetic fields be detected, including also fields with intensity lower than said minimum threshold, for example in the field of real-time biological analysis, as described in greater detail below.
  • the present invention intends to overcome said drawbacks.
  • the Hall effect magnetic sensor that is the subject of the invention is characterized in that it comprises a properly doped semiconductor substrate on which two diodes are defined, which are arranged side by side and preferably but not necessarily are two diodes or more precisely photodiodes of the avalanche type operating in Geiger mode.
  • the sensor of the invention comprises means for injecting minority charge carriers provided along the axis of symmetry defined between said two avalanche diodes.
  • said injector means are configured to inject at least one minority charge carrier into said substrate of the sensor, in such a way as to generate a diffusion current suited to flow under the same avalanche diodes.
  • the magnetic sensor of the invention comprises processing means that are operatively connected to each output channel of the two diodes and configured to count the number of avalanche events induced by said at least one minority charge carrier on both of the diodes, during a pre- established observation time window, and to calculate the difference between the counts at the end of said observation time window.
  • avalanche diodes in Geiger mode, as is known they are fed above the threshold voltage by a quantity defined as "excess bias". When an electron-hole pair is generated, said avalanche diodes are accelerated by the high electric field until they generate another pair of carriers through impact ionization. A positive feedback is then produced, so that the current reaches very quickly its maximum value limited by the intrinsic resistance of the device and by the power supply voltage. In this mode, however, the current would remain constant and it would not be possible to detect other events after the first one, and the device would be unusable.
  • a quenching circuit is introduced which is connected in series to each one of the output channels of the diodes.
  • said processing means are operatively connected in an intermediate position between said output channels and the related quenching circuits.
  • reading each signal between the quenching circuit and the output channel of the diode means transducing the current signal generated by the diode into a voltage impulse whose amplitude equals the excess bias.
  • an impulse is obtained that can be processed both in the field of digital electronics, and thus without using an A/D conversion circuit, and in that of analog electronics.
  • the signal were collected under the quenching circuit, instead, the same signal should be read as a current value.
  • said reading as a current value would involve the need to have a very quick amplification circuit, with consequent high consumption of power and area, in addition to introducing a higher quantity of noise.
  • it would also be necessary to carry out an A/D conversion of the signal in order to allow it to be read in the digital field. Therefore, the advantages of reading the signal between the output channel of the diode and the quenching circuit are substantially represented by the possibility to read the signal with a compact circuit in terms of surface area, low consumption and in a manner free of noise and electric cross-talk.
  • reading the signal between the output channel of the diode and the quenching circuit advantageously makes it possible to modify the voltage applied to the quenching circuit in order to quench the avalanche effect more effectively, and if necessary to pre-charge the diode in such a way as to prevent some types of noise, such as the so-called afterpulsing.
  • the invention includes also the matrix comprising a plurality of Hall effect magnetic sensors carried out according to the invention, as described in claim 12.
  • FIGS. 1 a and 1 b respectively show a side sectional view and a plan view of a Hall effect sensor made using the CMOS technology of the known art
  • FIG. 2 shows a plan view of the magnetic sensor of the invention
  • FIG. 3 shows a side sectional view of the magnetic sensor of the invention
  • FIG. 4 schematically shows the flow of the diffusion current under the two diodes of the magnetic sensor of the invention in the absence of a magnetic field
  • FIG. 5 schematically shows the flow of the diffusion current under the two diodes of the magnetic sensor of the invention in the presence of a magnetic field
  • FIG. 6 shows a plan view of the matrix of magnetic sensors of the invention
  • FIG. 7 shows a side sectional view of the matrix of magnetic sensors of the invention.
  • the Hall effect magnetic sensor of the invention hereinafter referred to simply as magnetic sensor for the sake of clarity, is shown in plan view in Figure 2 and in section view in Figure 3, and it is indicated as a whole by 1.
  • the magnetic sensor 1 of the invention makes it possible to measure the intensity of the magnetic field in which the same sensor 1 is immersed.
  • the magnetic sensor 1 comprises a semiconductor substrate 2 subjected to proper doping.
  • the semiconductor substrate 2 comprises a first layer 21 subjected to doping of a first type p, over which a second layer 22 is defined, which is subjected to doping of the opposite type, meaning n.
  • This second layer 22, as is known, is defined as "n-well”.
  • the doping processes to which the two layers 21 and 22 are subjected are inverted, in particular that the first layer 21 is subjected to doping of the n type and the second layer 22 is subjected to doping of the p type.
  • all the elements making up the magnetic sensor 1 of the invention and described below must present inverted doping processes with respect to those indicated or simply implied for the preferred embodiment of the invention which is being considered herein.
  • the magnetic sensor 1 of the invention comprises two diodes that, according to the preferred embodiment, are two diodes, or more precisely photodiodes, of the avalanche type operating in Geiger mode 3 (Geiger-mode APDs) provided on said second layer 22.
  • the two avalanche diodes operating in Geiger mode 3, indicated here below - if not specified otherwise - simply as diodes 3, are arranged side by side, as can be seen in Figure 2, defining an axis of symmetry X between them.
  • said diodes 3 are not of the avalanche type or that, even though of the avalanche type, they do not operate in Geiger mode, provided that, however, they can generate a signal in response to the detection of at least one minority charge carrier.
  • an avalanche diode operating in Geiger mode is a diode comprising a p-n junction polarized inversely at a value exceeding the breakdown voltage. In this situation, until ideally there is at least one single charge carrier in the depletion region, no current flows in either of said diodes.
  • At least one single charge carrier enters the depletion region, it is accelerated by the strong electric field present in the diode, consequently hitting the network of the latter. This impact causes the release of other charge carriers, which in turn hit the network and thus generate an avalanche effect.
  • a rapid increase of the current that flows through the diode takes place, in a time in the order of nanoseconds or fractions of nanoseconds, until such current is limited in the manner described below through a proper quenching circuit.
  • On arrival of said carrier therefore, a current impulse in the order of milliamperes is generated, which can be easily detected by suitable processing means.
  • both the diodes 3 have substantially the same shape and size, as can be observed in Figure 2.
  • said geometric identity determines a substantially identical behaviour of the two diodes 3 in the presence of the same external events generating the avalanche.
  • both the diodes 3 have a substantially rectangular shape, with the long sides oriented towards a direction parallel to said axis of symmetry X.
  • said elongated shape in the direction parallel to the axis of symmetry X makes it possible to increase the sensitivity of the same sensor 1 , as is described in detail below.
  • the shape of the diodes 3 can be different from the rectangular shape, or that the same diodes 3 may not have said elongated shape.
  • the sensitive surface 31 of each one of said diodes 3 oriented towards the outside is inhibited to the detection of photons through the superimposition of a light inhibitor filter 4.
  • the light inhibitor filter 4 is made through a metallization layer 41 deposited on said sensitive surface 31 of each one of the diodes 3.
  • inhibitor filter 4 is carried out in a different manner than through deposition of a metallization layer 41 , for example through special polymers whose characteristics prevent the passage of light.
  • said inhibition is necessary, as it is important that in said diodes 3 used in the magnetic sensor 1 of the invention the possibility of occurrence of an avalanche effect due to the incidence of a photon on their sensitive surface 31 be avoided.
  • the magnetic sensor 1 of the invention furthermore comprises two quenching circuits 5, each one of which is connected in series to the output channel 32 of one of the two diodes 3.
  • said quenching circuits 5 have the function of stopping the avalanche effect that is generated on one of the two diodes 3 following an external event.
  • said quenching circuits 5 serve to restore the initial conditions of said diodes 3 after the occurrence of an avalanche effect.
  • each one of said two quenching circuits 5 comprises a quenching resistance 51.
  • said quenching circuits 5 are of a type different from said quenching resistance 51 .
  • the magnetic sensor 1 of the invention comprises injector means 6 suited to inject minority charge carriers 100 and provided on the same second layer 22 on which the diodes 3 are provided.
  • said injector means 6 are defined along said axis of symmetry X of the two diodes 3.
  • the injector means 6 are provided on a point of incidence P between the axis of symmetry X and a second axis Y substantially orthogonal to the same axis of symmetry X.
  • Said second orthogonal axis Y is defined externally to the two diodes 3, meaning that it is not incident on the same two diodes 3.
  • the injector means 6 may be provided along said axis of symmetry X in an intermediate position between the two diodes 3.
  • the injector means 6 are configured to inject minority charge carriers 100 in the substrate 2, in particular in the second layer 22, so as to generate a diffusion current suited to flow under the two avalanche diodes 3.
  • the special position of the injector means 6 with respect to the two diodes 3 makes it possible to optimize the performance of the magnetic sensor 1 of the invention, in particular to increase its sensitivity for the detection of magnetic fields even of low intensity.
  • arranging the injector means 6 at the level of said axis of symmetry X advantageously makes it possible to define a diffusion current that, in the absence of a magnetic field, flows in a substantially balanced manner under both of the diodes 3.
  • arranging the injector means 6 in a point P where they are not incident on the two diodes 3, as described in detail above makes it possible to define a diffusion current that flows under the same diodes 3 along their entire length. This characteristic, as can be immediately understood, contributes to increasing the sensitivity of the entire magnetic sensor 1.
  • said injector means 6 comprise a diode 61 suited to be polarized in such a way as to inject the minority charge carriers 100 in the semiconductor substrate 2, in particular in the second layer 22.
  • said diode 61 is obtained by subjecting a surface portion 22a of said second layer 22, at the level of the predefined point of incidence P, to doping of the p+ type.
  • the magnetic sensor 1 of the invention comprises processing means 7 operatively connected to each output channel 32 of the two avalanche diodes 3 and configured to count the number of avalanche events induced by said minority charge carriers 100 on both of the avalanche diodes 3.
  • said processing means 7 carry out said count simultaneously on both diodes 3 during a pre-established observation time window T.
  • the same processing means 7 are configured to calculate, at the end of said observation time window T, the difference between the counts previously made.
  • said processing means 7 are operatively connected in an intermediate position between said output channels 32 and the quenching circuits 5.
  • said intermediate connection of the processing means 7 advantageously makes it possible to use as output signal from the diode the voltage impulse with amplitude equal to the excess bias that is generated in said intermediate point when the diode generates a current signal.
  • an impulse is obtained which can be processed both in the field of digital electronics, that is, without using an A/D conversion circuit, and in the field of analog electronics. Consequently, it is possible to read said voltage impulse with a compact circuit in terms of surface area, low consumption and in a manner free of noise and electric cross-talk.
  • processing means 7 can be operatively connected to the end of the quenching circuit 5 opposite the end connected to one of the two output channels 32.
  • said processing means 7 calculate said difference makes it possible to filter any spurious count due to common disturbances that affect both the diodes 3.
  • the magnetic sensor 1 of the invention when the magnetic sensor 1 of the invention is activated, that is, when the injector means 6 are polarized in a direct manner and the diodes 3 are polarized in such a way that they operate in Geiger mode, in the absence of a magnetic field, the minority charge carriers 100 injected in the second layer 22 and therefore the diffusion current are distributed in a balanced and symmetrical manner under said diodes 3, as schematically shown in Figure 4. Consequently, during a predefined observation time window T, said processing means 7 are expected to count the same number of avalanche events generated on both of the diodes 3. Said effects, as already explained, are generated by the flow of diffusion current under the same diodes 3. Therefore, according to expectations, the difference between the two counts calculated at the end of said observation time window T should be null.
  • Said deflection determines an unbalance of the avalanche events that take place in the two diodes 3.
  • the processing means 7, during said observation time window T will count a different number of avalanche events that are started in the two diodes 3, exactly as a consequence of said deflection of the minority charges due to the Hall effect.
  • the processing means 7 will define exactly the difference between the number of events generated during the observation period.
  • the applicant has observed through experimental tests that said difference is linearly correlated to the intensity of the magnetic field M in which the magnetic field 1 of the invention is immersed. Furthermore, the sign of said difference makes it possible to establish also the direction of the magnetic field M, as described in detail above.
  • the invention includes also the matrix 200 comprising a plurality of magnetic sensors positioned side by side, wherein each one of said magnetic sensors is a magnetic sensor 1 according to the invention.
  • each one of said magnetic sensors is a magnetic sensor 1 according to the invention.
  • the two diodes 3 and the corresponding injector means 6 of each magnetic sensor 1 of the invention are defined on a common semiconductor substrate 2.
  • said common substrate 2 comprises a first common layer 21 subjected to doping of the p type and for each one of said magnetic sensors 1 a second layer 22 is defined, which is subjected to doping of the n type and is electrically insulated from the second layers 22 of the other magnetic sensors 1.
  • the first layer 21 and the second layers 22 are subjected to inverted doping processes with respect to the preferred embodiment of the matrix 200 of the invention just described above and represented in Figures 6 and 7.
  • a matrix 200 of magnetic sensors 1 with high resolution due to the presence of a high number of magnetic sensors 1 on its surface and high sensitivity is suited to be used, for example, in the sector of real-time biological analysis.
  • each of them is associated with a magnetic-microbead.
  • said microbeads When excited, said microbeads generate a magnetic field whose intensity is proportional to their paramagnetic characteristic.
  • the matrix 200 of magnetic sensors 1 of the invention in such a way that the field lines of the magnetic fields generated by said microbeads are perpendicular to the plane of development of the same matrix 200, it is possible to count accurately the number of bacteria present in the biological material and furthermore to locate the precise position of said bacteria in said material.
  • the Hall effect magnetic sensor and the matrix of Hall effect magnetic sensors of the invention achieve all the set objects.
  • the invention achieves the object to provide a Hall effect magnetic sensor in which said thermal noise does not appear or at least has a substantially negligible value.
  • the invention also achieves the object to provide a Hall effect magnetic sensor with higher sensitivity compared to the magnetic sensors of the known art.
  • the invention also achieves the further object to provide a Hall effect magnetic sensor that, while ensuring the same performance levels, has a lower production cost than the magnetic sensors of the known art, even different from those with Hall effect.
  • the invention also achieves the object to provide a Hall effect magnetic sensor with a small size, in such a way as to allow the definition of matrices with high resolution comprising a plurality of magnetic sensors of said type.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

La présente invention concerne un capteur magnétique à effet Hall (1) approprié pour mesurer l'intensité d'un champ magnétique (M). Ledit capteur comprend un substrat à semi-conducteur (2) soumis à un dopage sur lequel les éléments suivants sont définis : deux diodes agencées côte à côte ; des moyens (6) appropriés pour injecter des porteurs de charge minoritaires (100) et prévus sur le substrat à semi-conducteur (2) le long de l'axe de symétrie (X) défini entre les deux diodes (3), les moyens d'injection (6) étant conçus pour injecter les porteurs de charge minoritaires (100) dans le substrat à semi-conducteur (2) de manière telle à générer un courant de diffusion approprié pour passer sous les deux diodes (3) ; des moyens de traitement (7) fonctionnellement connectés à chaque canal de sortie (32) des deux diodes (3) et conçus pour compter le nombre d'événements induits par les porteurs de charge minoritaires (100) sur les deux diodes (3) durant une fenêtre d'observation temporelle préétablie (T) et pour calculer la différence entre les comptes à la fin de la fenêtre temporelle d'observation (T). Le capteur magnétique à effet Hall (1) comprend en outre un circuit d'extinction (5) connecté en série à l'un des canaux de sortie (32) des diodes (3) et les moyens de traitement (7) sont connectés fonctionnellement dans une position intermédiaire entre les canaux de sortie (32) et les circuits d'extinction (5).
EP15788186.3A 2014-09-05 2015-09-04 Capteur magnétique à effet hall du type amélioré et matrice comprenant une pluralité desdits capteurs magnétiques à effet hall Withdrawn EP3194991A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITVI20140224 2014-09-05
PCT/IB2015/056747 WO2016035039A1 (fr) 2014-09-05 2015-09-04 Capteur magnétique à effet hall du type amélioré et matrice comprenant une pluralité desdits capteurs magnétiques à effet hall

Publications (1)

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EP3194991A1 true EP3194991A1 (fr) 2017-07-26

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EP15788186.3A Withdrawn EP3194991A1 (fr) 2014-09-05 2015-09-04 Capteur magnétique à effet hall du type amélioré et matrice comprenant une pluralité desdits capteurs magnétiques à effet hall

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WO (1) WO2016035039A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3367110B1 (fr) * 2017-02-24 2024-04-17 Monolithic Power Systems, Inc. Système et procédé de détection de courant

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor
US4288708A (en) * 1980-05-01 1981-09-08 International Business Machines Corp. Differentially modulated avalanche area magnetically sensitive transistor
JPS59222969A (ja) * 1983-05-27 1984-12-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応トランジスタ
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor

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