EP3171511B1 - Verfahren und system zur messung der strom-spannung characteristik einer photovoltaischen anlage - Google Patents

Verfahren und system zur messung der strom-spannung characteristik einer photovoltaischen anlage Download PDF

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EP3171511B1
EP3171511B1 EP16199189.8A EP16199189A EP3171511B1 EP 3171511 B1 EP3171511 B1 EP 3171511B1 EP 16199189 A EP16199189 A EP 16199189A EP 3171511 B1 EP3171511 B1 EP 3171511B1
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transistor
voltage
control voltage
vgs
signal
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French (fr)
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EP3171511A1 (de
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Thi Thanh Yen MAI
Nicolas Chaintreuil
Jean-Baptiste DESMOULIERE
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method and a system for determining current-voltage characteristics of a photovoltaic installation, which makes it possible in particular to draw the current-voltage characteristic curve of the photovoltaic installation.
  • a known technique for drawing the curve IV of a photovoltaic installation uses a MOSFET transistor which is connected to the terminals of the installation.
  • a control voltage signal Vgs applied between the gate and the source of the MOSFET controls the transistor to pass a short-circuit or saturation phase, during which the MOSFET behaves as a closed switch, the voltage Vgs being greater than a saturation voltage Vgs (sat), at an open circuit phase, during which the MOSFET behaves as an open switch, the voltage Vgs being less than a threshold voltage Vgs (th), passing through a linear phase, during which the MOSFET comprises as a resistance, the voltage Vgs then being between Vgs (sat) and Vgs (th).
  • Curve IV can therefore be plotted from current and voltage measurements during the linear transition phase between the saturation or short-circuiting phase of the MOSFET and the open circuit phase of the MOSFET.
  • an analog circuit RC which transforms a vertical voltage ramp, during which the voltage goes from a voltage V max (for example 12 V) greater than Vgs (sat). ), at a voltage of zero instantaneously or almost instantaneously, in a curved voltage ramp to slow the transition time between V max and zero voltage, which allows time to perform measurements during the linear phase between Vgs (sat) and Vgs (th).
  • the saturation voltage Vgs (sat) and the threshold voltage Vgs (th) can vary according to the temperature, it is necessary to acquire points of measurement of the voltage and the current of the photovoltaic installation on the totality or almost the entire ramp, then process the measured data to extract those corresponding to the linear phase ⁇ lin .
  • the present invention improves the situation.
  • fast and slow have a relative meaning between them and mean that the speed of variation of the control voltage is higher during the so-called “fast” variation phase than during the so-called “slow” variation phase. ".
  • the duration of the operation of determining the current-voltage characteristics is greatly reduced because the control voltage of the transistor reaches the transistor linear speed range in a fast and numerically controlled manner, that is, say the voltage range of control between the saturation voltage and the threshold voltage of the transistor.
  • this linear speed range is traveled slowly at a digitally controlled speed, which allows for sufficient measurements of the current and voltage of the photovoltaic system.
  • the transistor being initially in short-circuit mode, it controls a first rapid decrease of the control voltage to said linear range of the transistor and then a second slow decrease of the control voltage flowing in said range linear regime of the transistor.
  • the current-voltage characteristics of the photovoltaic system are determined when the transistor goes from the short-circuit regime to the open-circuit regime, during the intermediate linear regime.
  • the second slow variation of the control voltage has a duration of between 0.8 ms and 10 ms.
  • the first rapid variation of the control voltage has a duration less than or equal to 10 ⁇ s.
  • the third rapid decrease has a duration less than or equal to 10 ⁇ s.
  • control voltage signal comprising an initial phase during which the control voltage is zero, an increase in said control voltage of the zero voltage is controlled to a high voltage, higher than the saturation voltage, and then a maintenance of the high voltage for a duration of between 10 nanoseconds and 100 nanoseconds.
  • a PWM signal is generated using a microcontroller which digitally controls variations of a duty cycle of said PWM signal, and then the signal is filtered with a low-pass filter so as to obtain a voltage signal having a desired profile.
  • said voltage signal having the desired profile is amplified in power in order to obtain the control voltage signal.
  • the control voltage signal is made from a PWM signal whose duty cycle is controlled numerically by a microcontroller. By varying this duty cycle and the rate of change of this duty cycle by digital controls, an analog voltage signal having the desired profile is outputted from the low-pass filter.
  • the amplification device makes it possible to set this signal to the scale of the transistor to be controlled, that is to say to amplify the voltage at the output of the filter to obtain a voltage level adapted to control the transistor.
  • At least one of the physical quantities relating to the transistor of the group comprising a temperature, a current and a voltage is measured in order to detect the linear speed of the transistor.
  • the transistor may be of the IGBT type.
  • the invention also relates to a system for determining current-voltage characteristics of a photovoltaic installation comprising a MOSFET transistor connected to the terminals of the photovoltaic installation, a control circuit for applying to the transistor a signal of a voltage.
  • controller which traverses a linear range of the transistor, between two critical voltages comprising a saturation voltage and a threshold voltage, and a measuring device for measuring the current and the voltage of the photovoltaic system during the course of said range corresponding to the linear regime of the transistor, characterized in that the control circuit is a digital control circuit adapted to produce a control voltage signal of the transistor, initially in a short circuit or open circuit, which comprises a first variation fast control voltage to said linear range of the transi stor then a second slow variation of the control voltage flowing through said linear range of the transistor, the transition between the first and the second variation being discontinuous.
  • the invention aims at determining the current-voltage characteristics of a photovoltaic installation 1, making it possible to draw the characteristic curve IV (current-voltage) of the photovoltaic installation 1.
  • the photovoltaic installation 1 can comprise one or more photovoltaic modules, for example a string of photovoltaic modules. It can be part of a photovoltaic power generation plant.
  • the transistor 3 in this case a MOSFET, is intended to be connected to the photovoltaic system 1 so that the transistor 3 and the photovoltaic system 1 are connected in series in a closed circuit, as shown in FIG. figure 6 .
  • the transistor 3 serves to determine the current-voltage characteristics of the photovoltaic installation 1.
  • Another transistor, not shown, serves to isolate or disconnect the photovoltaic system 1 from the production system.
  • the measuring device 5 is intended to measure the output current I of the photovoltaic installation 1 and the voltage V at the terminals of the photovoltaic installation 1. It comprises here a device 50 for measuring current connected to series to the photovoltaic installation 1 and a voltage measuring device 51 connected in parallel to the terminals of the photovoltaic installation 1.
  • the control circuit 4 is intended to deliver a control voltage signal to the MOSFET transistor 3.
  • This control voltage of the transistor 3 is the voltage Vgs between the gate and the source of the MOSFET.
  • Circuit 4 is a digital control circuit. It comprises a microcontroller 40, a low-pass filter 41 and an amplification device 42.
  • the microcontroller 40 is intended to produce a digital control signal for generating a PWM (" Pulse Width Modulation ") output signal, denoted SIG 1 .
  • PWM signal SIG 1 is a pulse width modulated signal (PWM). It is a two-state logic signal, high and low, fixed frequency but whose duty cycle is controlled numerically.
  • the PWM signal is a high and low two-state voltage signal, the high state corresponding to a high voltage, generally 3.3V, and the low state corresponding to a zero voltage.
  • Digital controls of the microcontroller 40 make it possible to vary the duty cycle of the PWM signal.
  • the low-pass filter 41 connected at the output of the microcontroller 40, is intended to average the signal PWM SIG 1 output of the microcontroller, this average being proportional to the duty cycle.
  • SIG 2 an analog voltage signal, denoted SIG 2 , having a desired profile, that is to say a profile similar to that of the voltage signal. desired order.
  • the amplification device 42 connected at the output of the low-pass filter 41, is intended to amplify in power the signal of voltage SIG 2 delivered by the low-pass filter 41 in order to produce a control voltage signal SIG 3 adapted to control the MOSFET transistor 3 (i.e. having a suitable voltage level).
  • This control voltage signal SIG 3 is applied between the gate and the source of the MOSFET transistor 3.
  • the voltage Vgs between the gate and the source of the MOSFET 3 is therefore equal to the signal SIG 3 .
  • the method comprises a first step E0 for connecting the MOSFET, in which an operator connects the MOSFET transistor 3 in series with the photovoltaic installation 1, the MOSFET 3 and the installation 1 being connected in a closed circuit, as shown in FIG. figure 6 .
  • the control circuit 4 is connected to the MOSFET transistor and adapted to apply to it a control voltage Vgs between the gate and the source.
  • control voltage signal Vgs is generated from a PWM signal (SIG 1 ) produced at the output of the microcontroller 40.
  • This PWM signal is then filtered by the low-pass filter 41 and then amplified by the device 42. to generate the control voltage signal Vgs.
  • the duty cycle of the signal PWM SIG 1 which is produced at the output of the microcontroller 40 is parameterized and controlled by digital commands generated by the microcontroller 40.
  • the method comprises a second step E1 of connection of the measuring device 5, in which the current measurement device 50 is connected in series with the photovoltaic system 1 and the voltage measurement device 51 is connected in parallel across the terminals of FIG. the photovoltaic system 1, as shown on the figure 6 .
  • the control circuit 4 applies to the MOSFET transistor 3 a control voltage Vgs zero.
  • the control voltage Vgs is zero and therefore smaller than the threshold voltage Vgs (th)
  • the MOSFET 3 is an open circuit system, denoted ⁇ co, and behaves like an open switch.
  • an operator triggers a plot operation of the IV curve of the photovoltaic installation 1, for example by activating a specific command of the user interface 6 of the installation 1 at a time t 1 .
  • the microcontroller 40 controls an increase in the duty cycle ⁇ of the PWM signal SIG 1 so as to rapidly change this ratio ⁇ from the value 0 to the value 1, during a step E4.
  • the control circuit 4 increases the control voltage Vgs applied to the transistor 3, which rapidly changes from the zero voltage to a maximum high voltage, noted Vgs max , for example equal to 12 V.
  • This high voltage Vgs max is in all hypothesis greater than the saturation voltage Vgs (sat) of the transistor 3.
  • the control voltage signal Vgs (SIG 3 ) thus comprises a voltage jump ST between 0V to Vgs max (here 12V).
  • the duration of this voltage jump ST, between the instant t 1 and an instant t 2 is advantageously of the order of a few microseconds, advantageously less than 10 ⁇ s.
  • the voltage jump ST could be instantaneous or quasi-instantaneous, as represented on the figure 3 .
  • This increase in Vgs control voltage switches the MOSFET 3 of the original scheme of open circuit co ⁇ to a short-circuit system, denoted ⁇ cc, wherein the transistor 3 behaves as a closed switch.
  • the microcontroller 40 controls a maintenance of the duty ratio ⁇ equal to 1 for a short duration d, between the instant t 2 and a time t 3 .
  • This duration d is advantageously between 10 nanoseconds and 100 nanoseconds.
  • the control circuit 4 applies a stable Vgs control voltage equal to the high voltage maximum Vgs max (here 12 V), during the duration d. During this voltage plateau Vgs max , the transistor 3 remains in short-circuit mode ⁇ cc .
  • the microcontroller 40 controls a first so-called “fast" decrease of the duty cycle ⁇ in order to make it pass quickly, or even instantaneously or almost instantaneously, from the value 1 at a first critical value, during a step E6.
  • This first critical value of the duty cycle ⁇ corresponds to a control voltage equal to, or substantially equal to, the saturation voltage Vgs (sat) of the transistor 3. It is equal to 0.35 in the example of FIG. figure 4 .
  • the saturation voltage Vgs (sat) is here that indicated in the technical characteristics of the transistor 3 supplied by the manufacturer. It is memorized by the microcontroller 40 which calculates by calculation the critical value of the corresponding duty cycle ⁇ .
  • the control circuit 4 controls a first rapid drop (or fall) of the control voltage Vgs applied to the transistor 3 which makes it go from the high voltage Vgs max to a first critical voltage equal to the saturation voltage Vgs (sat ).
  • This first rapid decrease in voltage is noted BT1. Its duration is preferably less than 10 ⁇ s, for example of the order of a few microseconds. It could be instantaneous or almost instantaneous.
  • the first rapid drop in the control voltage makes it possible to approach the saturation voltage Vgs (sat), in other words to reach a voltage close to this one.
  • the microcontroller 40 slows the decrease of the duty cycle ⁇ in order to make it pass slowly from the first critical value (equal to 0.35 on the figure 4 ) at a second critical value (equal to 0.20 on the figure 4 ).
  • This second critical value of the duty cycle ⁇ corresponds to a control voltage equal to the threshold voltage Vgs (th) of the transistor 3.
  • the decrease of the control voltage Vgs is slowed down.
  • the control circuit 4 thus controls a second slow decrease of the control voltage Vgs, denoted BT2, up to the threshold voltage Vgs (th).
  • the tension of Vgs command decreases slowly in order to change from the saturation voltage Vgs (sat) to the threshold voltage Vgs (th).
  • the transistor 3 is in linear mode ⁇ lin and behaves like a variable resistor.
  • the control voltage Vgs thus traverses the linear speed range of transistor 3 between Vgs (sat) and Vgs (th).
  • the threshold voltage Vgs (th) is part of the technical characteristics of the transistor 3 supplied by the manufacturer and is stored in the microcontroller 40.
  • the duration of this slow down phase BT2 of the control voltage is between 800 ⁇ s and 10 ms.
  • the transition between the first rapid decrease BT1 and the second slow decrease BT2 of the control voltage Vgs is discontinuous, that is to say, abrupt or non-progressive. This results in a discontinuity in the temporal evolution of the control voltage Vgs between the two lowering phases BT1 and BT2.
  • the measuring device 5 measures the voltage V at the terminals of the photovoltaic installation 1 and the output current I of the photovoltaic installation 1, during a step E8.
  • the measurements of V and I while the transistor 3 is in linear mode make it possible to draw the characteristic curve I-V of the photovoltaic installation 1, during a step E9.
  • This I-V curve can be displayed on a screen of the user interface 6.
  • the microcontroller 40 commands a sudden or rapid decrease in the duty cycle ⁇ in order to move it rapidly from the second critical value (here equal to 0.20) to the value 0.
  • the control circuit 4 controls a third rapid decrease BT3 of the control voltage Vgs which changes it from the threshold voltage Vgs (th) to a voltage nothing.
  • the duration of this phase BT3 of rapid drop in control voltage Vgs is advantageously less than 10 ⁇ s, for example of the order of a few microseconds.
  • the BT3 drop could be instantaneous or almost instantaneous.
  • the decrease BT3 switches the control voltage Vgs below the threshold voltage Vgs (th) so that the transistor 3 goes into open circuit mode ⁇ co .
  • the transition between the second slow decrease BT2 and the third rapid decrease BT3 of the control voltage Vgs is discontinuous, that is to say, abrupt or non-progressive. This results in a discontinuity in the temporal evolution of the control voltage Vgs between the two lowering phases BT2 and BT3.
  • fast and slow mean that the rate of variation of the voltage is higher during the BT1 (or BT3) variation phase called “fast” than during the second phase of variation BT2 called “Slow”
  • the microcontroller 40 controls a maintenance of the duty cycle ⁇ equal to 0.
  • the control circuit 4 applies a stable control voltage Vgs, equal to a value of 0V.
  • Transistor 3 remains in open circuit mode ⁇ co .
  • the beginning and the end of the range of control voltages corresponding to the linear speed of the transistor are determined from the saturation voltage Vgs (sat) and the threshold voltage Vgs (th) indicated by the manufacturer. .
  • the beginning and / or end of this linear speed range is detected from measurements of at least one of the physical quantities relating to the transistor of the group comprising a temperature, a current and a voltage.
  • the beginning of the linear phase can be detected by a variation of the voltage and / or the current at the terminals of the transistor 3.
  • the end of the linear phase can be detected by a lack of variation of the same magnitudes at the terminals of the transistor 3.
  • the characteristic data of current and voltage relating to the photovoltaic installation 1 are measured when the transistor is in linear mode to go from the short-circuit regime to the open circuit regime, in other words when the Control voltage travels the Miller range from the saturation voltage Vgs (sat) to the threshold voltage Vgs (th).
  • the characteristic data of current and voltage of the photovoltaic installation 1 when the transistor is in linear mode to go from the open circuit regime to the short circuit regime, in other words when the control voltage goes through the Miller range of threshold voltage Vgs (th) at saturation voltage Vgs (sat).
  • the transistor being initially in open circuit mode (the applied control voltage Vgs being zero), the circuit 4 controls a first rapid increase of the control voltage towards the linear speed range of the transistor, or Miller's range. , then a second slow increase in the control voltage flowing through the linear range of the transistor, the transition between the two increases, fast and slow, being discontinuous.
  • the invention is based on the generation of a control voltage signal Vgs of transistor 3 from a digital control signal.
  • the transistor being initially either shorted ⁇ cc scheme, evening open circuit scheme ⁇ co, the control voltage signal comprises a first rapid variation of the Vgs control voltage to the linear regime of the range of the transistor 3 then a second slow variation of the control voltage Vgs traversing this linear range of the transistor 3, the transition between the first and the second variation being discontinuous (non-progressive).

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Claims (17)

  1. Verfahren zur Bestimmung der Strom-Spannung-Charakteristiken einer photovoltaischen Anlage (1), umfassend die folgenden Schritte:
    • Verbinden (E0) eines Transistors vom Typ MOSFET (3) mit der photovoltaischen Anlage (1),
    • Anlegen (E7) eines Steuerspannungssignals (Vgs) an den Transistor, das einen Bereich (ϕlin) des linearen Zustands des Transistors (3) durchläuft, zwischen zwei kritischen Spannungen, umfassend eine Sättigungsspannung (Vgs(sat)) und eine Schwellenspannung (Vgs(th)), und
    • Messen des Stroms (I) und der Spannung (V) der photovoltaischen Anlage (1) während des Durchlaufs des Bereichs entsprechend dem linearen Zustand des Transistors,
    dadurch gekennzeichnet, dass das Steuerspannungssignal (Vgs) des Transistors (3) aus einem numerischen Steuersignal generiert wird, und dadurch, dass, wenn der Transistor anfänglich im Kurzschlusszustand (ϕcc) oder offenen Schaltungszustand (ϕco) ist, eine erste rasche Variation (BT1) der Steuerspannung (Vgs) zum Bereich des linearen Zustands des Transistors (3), dann eine zweite langsame Variation (BT2) der Steuerspannung (Vgs) gesteuert wird, die den Bereich des linearen Zustands des Transistors (3) durchläuft, wobei der Übergang zwischen der ersten und der zweiten Variation diskontinuierlich ist.
  2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass, wenn der Transistor anfänglich im Kurzschlusszustand (ϕcc) ist, eine erste rasche Senkung (BT1) der Steuerspannung (Vgs) zum Bereich des linearen Zustands des Transistors (3), dann eine zweite langsame Senkung (BT2) der Steuerspannung (Vgs) gesteuert wird, die den Bereich des linearen Zustands des Transistors (3) durchläuft.
  3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die zweite langsame Variation der Steuerspannung eine Dauer zwischen 0,8 ms und 10 ms aufweist.
  4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die erste rasche Variation der Steuerspannung eine Dauer kleiner oder gleich 10 µs aufweist.
  5. Verfahren nach einem der Ansprüche 2 bis 4, dadurch gekennzeichnet, dass, nach der zweiten langsamen Senkung der Steuerspannung, eine dritte rasche Senkung der Steuerspannung bis zum Erzielen einer Null-Spannung gesteuert wird, wobei der Übergang zwischen der zweiten und der dritten Senkung diskontinuierlich ist.
  6. Verfahren nach einem der Ansprüche 2 bis 4, dadurch gekennzeichnet, dass die dritte rasche Senkung eine Dauer kleiner oder gleich 10 µs aufweist.
  7. Verfahren nach einem der Ansprüche 2 bis 6, dadurch gekennzeichnet, dass, wenn das Steuerspannungssignal eine Initialphase umfasst, während welcher die Steuerspannung Null ist, eine Erhöhung der Steuerspannung von der Nullspannung auf eine hohe Spannung gesteuert wird, die über der Sättigungsspannung liegt, dann die hohe Spannung während einer Dauer zwischen 10 Nanosekunden und 100 Nanosekunden aufrechterhalten wird.
  8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass ein Signal PWM mit Hilfe einer Mikrosteuereinheit generiert wird, die numerisch Variationen eines zyklischen Verhältnisses des Signals PWM steuert, dann das Signal mit einem Tiefpassfilter gefiltert wird, um ein Spannungssignal mit einem gewünschten Profil zu erhalten.
  9. Verfahren nach dem vorhergehenden Anspruch, dadurch gekennzeichnet, dass das Spannungssignal mit dem gewünschten Profil leistungsverstärkt wird, um das Steuerspannungssignal zu erhalten.
  10. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass, während der ersten Variation der Steuerspannung, mindestens eine der physikalischen Größen in Bezug auf den Transistor der Gruppe umfassend eine Temperatur, einen Strom und eine Spannung gemessen wird, um den linearen Zustand des Transistors zu detektieren.
  11. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Transistor vom Typ IGBT ist.
  12. System zur Bestimmung der Strom-Spannung-Charakteristiken einer photovoltaischen Anlage (1), umfassend einen Transistor vom Typ MOSFET, der mit Anschlüssen der photovoltaischen Anlage zu verbinden ist, eine Steuerschaltung (4), die dazu bestimmt ist, an den Transistor ein Steuerspannungssignal (Vgs) anzulegen, das einen Bereich (ϕlin) des linearen Zustands des Transistors (3) durchläuft, zwischen zwei kritischen Spannungen, umfassend eine Sättigungsspannung (Vgs(sat)) und einer Schwellenspannung (Vgs(th)), und eine Messvorrichtung (5) zum Messen des Stroms (I) und der Spannung (V) der photovoltaischen Anlage (1) während des Durchlaufs des Bereichs entsprechend dem linearen Zustand des Transistors, dadurch gekennzeichnet, dass die Steuerschaltung eine numerische Steuerschaltung ist, die eingerichtet ist, ein Steuerspannungssignal des Transistors zu generieren, der anfänglich im Kurzschlusszustand (ϕcc) oder offenen Schaltungszustand (ϕco) ist, umfassend eine erste rasche Variation (BT1) der Steuerspannung (Vgs) zum Bereich des linearen Zustands des Transistors (3), dann eine zweite langsame Variation (BT2) der Steuerspannung (Vgs), die den Bereich des linearen Zustands des Transistors (3) durchläuft, wobei der Übergang zwischen der ersten und der zweiten Variation diskontinuierlich ist.
  13. System nach dem vorhergehenden Anspruch, dadurch gekennzeichnet, dass, wenn der Transistor anfänglich im Kurzschlusszustand (ϕcc) ist, das Steuerspannungssignal eine erste rasche Senkung (BT1) der Steuerspannung (Vgs) zum Bereich des linearen Zustands des Transistors (3), dann eine zweite langsame Senkung (BT2) der Steuerspannung (Vgs), die den Bereich des linearen Zustands des Transistors (3) durchläuft, umfasst.
  14. System nach Anspruch 12 oder 13, dadurch gekennzeichnet, dass die numerische Steuerschaltung eine Mikrosteuereinheit, die dazu bestimmt ist, ein Signal PWM zu generieren, und ein zyklisches Verhältnis des Signals PWM zu modifizieren, und ein Tiefpassfilter, das dazu bestimmt ist, das Signal PWM zu filtern, um ein Spannungssignal mit einem gewünschten Profil zu erhalten, umfasst.
  15. System nach dem vorhergehenden Anspruch, dadurch gekennzeichnet, dass dieses eine Leistungsverstärkervorrichtung umfasst, die dazu bestimmt ist, das Spannungssignal mit dem gewünschten Profil in der Leistung zu verstärken, um das Steuerspannungssignal zu erhalten.
  16. System nach einem der Ansprüche 12 bis 15, dadurch gekennzeichnet, dass dieses Sensoren zur Messung mindestens einer der physikalischen Größen in Bezug auf den Transistor der Gruppe umfassend eine Temperatur, einen Strom und eine Spannung, und ein Detektionsmodul, das dazu bestimmt ist, den linearen Zustand des Transistors aus den Messungen zu detektieren, umfasst.
  17. System nach einem der Ansprüche 12 bis 16, dadurch gekennzeichnet, dass der Transistor vom Typ IGBT ist.
EP16199189.8A 2015-11-20 2016-11-16 Verfahren und system zur messung der strom-spannung characteristik einer photovoltaischen anlage Active EP3171511B1 (de)

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FR1561171A FR3044097A1 (fr) 2015-11-20 2015-11-20 Procede et systeme de determination de caracteristiques courant-tension d'une installation photovoltaique

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US10320329B2 (en) 2019-06-11
EP3171511A1 (de) 2017-05-24
FR3044097A1 (fr) 2017-05-26
US20170149382A1 (en) 2017-05-25
ES2689486T3 (es) 2018-11-14

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