EP3170210A2 - Procédé de fabrication d'un composant semi-conducteur organique et composant semi-conducteur organique - Google Patents

Procédé de fabrication d'un composant semi-conducteur organique et composant semi-conducteur organique

Info

Publication number
EP3170210A2
EP3170210A2 EP15747757.1A EP15747757A EP3170210A2 EP 3170210 A2 EP3170210 A2 EP 3170210A2 EP 15747757 A EP15747757 A EP 15747757A EP 3170210 A2 EP3170210 A2 EP 3170210A2
Authority
EP
European Patent Office
Prior art keywords
active layer
electrodes
ink
organic semiconductor
printing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP15747757.1A
Other languages
German (de)
English (en)
Inventor
Hans-Joachim EGELHAAF
Claudia HOTH
Sebastian Meier
Ralph Pätzold
Pavel Schilinsky
Michael Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asca & Co Kg GmbH
Original Assignee
Belectric OPV GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Belectric OPV GmbH filed Critical Belectric OPV GmbH
Publication of EP3170210A2 publication Critical patent/EP3170210A2/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/18—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/86—Series electrical configurations of multiple OLEDs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing an organic semiconductor device which is manufactured as a multilayer structure, comprising an upper electrode, a lower electrode and an active layer disposed between the electrodes, wherein for the electrical connection of the two electrodes, a through-contact is formed. Furthermore, the invention relates to a manufactured according to such a method organic semiconductor device.
  • the organic semiconductor device is in particular an OPV module.
  • an OPV module that is, an organic photovoltaic element is the generation of electrical energy by means of sunlight.
  • an OPV module has an active layer made of an organic semiconductor material in which charge carriers are generated by absorption of sunlight.
  • the active layer is typically arranged as a thin layer between an upper and a lower electrode each formed as a thin layer. This results in a multi-layer structure, which may also include other layers.
  • the active layer may additionally be arranged between so-called barrier layers. In the following, therefore, such a or similar combination is referred to simplifying as an active layer.
  • an OPV module often comprises several cells that are connected in series with one another. For this purpose, it is necessary in particular first to divide the upper and lower electrodes into mutually insulated upper and lower sub-electrodes and to form a plurality of cells in this way. To produce a series connection, the upper part electrode of a first cell is then usually connected in an electrically conductive manner to the lower part electrode of a second cell.
  • the layers lying between the electrodes and in particular the active layer have a number of interruptions, in which a suitable conductive material is arranged, by means of which the subelectrodes are correspondingly electrically conductively connected.
  • a via is formed between two cells, which extends from a lower part electrode to an upper part electrode through the intermediate active layer.
  • a method in which a substrate with a conductive structure and a first dielectric layer are provided.
  • the conductive structure comprises a through contact extending from one to the other side of the substrate.
  • a first conductive pattern is printed on the first dielectric layer, thereby forming a first pre-printed layer which is bonded to the one side of the substrate.
  • a first conductive material is applied such that the conductive structure is connected to the first conductive pattern.
  • a second dielectric layer is provided similar to the first dielectric layer and printed with a second conductive pattern. In this way, a second pre-printed layer is formed, which is now connected to the other side of the substrate.
  • a second conductive material is additionally applied in such a way that the conductive structure is connected to the second conductive pattern.
  • a method is known from US Pat. No. 8,129,661 6 B2, in which a photovoltaic cell with a semitransparent electrode, with an organic semiconductor layer and with a counterelectrode by means of a roller application method is trained.
  • a plurality of strip-shaped cells are formed on a carrier foil and connected in series by means of suitably applied electrodes.
  • the upper electrode of one of the cells overlaps with the lower electrode of an adjacent cell such that a series connection is realized.
  • at least one sacrificial layer is formed to form this configuration, which is removed again in the further course of the process.
  • WO 2013/104514 A1 describes a method for forming an organic semiconductor layer on a substrate, wherein a structured, self-organizing single layer is provided at predetermined locations of first electrodes and a layer of an organic semiconductor material is applied over the self-organizing single layer.
  • the self-organizing individual layer serves as a mask for keeping certain areas free on the first electrodes, so that in a subsequent formation of second electrodes they can reach through the active layer in order to be contacted with the first electrodes.
  • the formation of a plated through hole inevitably creates a dead zone in which no active material is present and thus can not be used to generate energy.
  • the ratio of usable surface area of the OPV module to non-usable area defines a geometric fill factor, which in particular also represents a measure of the efficiency of the OPV module. The larger the usable area compared to the non-usable area, the more energy per unit area can be generated with the OPV module, that is, the more efficient the OPV module is.
  • the OPV modules are usually thin and the multi-layer structure has a height that is several orders of magnitude smaller than the width and the length of the OPV module.
  • the layer thickness of the electrodes is in each case about 0.1 ⁇ m to 10 ⁇ m.
  • such thin layers usually have poor conductivity compared to thicker layers, which in turn limits the size of the individual cells of an OPV module.
  • the cell In order to achieve lower losses, the cell large, which in turn has a negative effect on the fill factor and correspondingly on the efficiency due to the additionally necessary through contacts.
  • the conductivity of at least one of the electrodes is furthermore often reduced by the fact that this at least one electrode is made of a transparent, conductive material whose conductivity is often poor.
  • the layer is either directly patterned, that is applied with a corresponding interruption, or the interruption is formed by subsequent removal of material from the layer.
  • the through-connection is then formed.
  • the formation of the via at the position of the interruption must take place, which disadvantageously results in a corresponding adjustment effort with regard to the various process steps.
  • the via is formed in common with the upper electrode and thus must be made of the same material as this.
  • the use of a laser is also known.
  • the selection of the operating parameters of the laser, such as wavelength and power is critical and in particular material dependent.
  • the operating parameters must in particular be selected such that only the active layer lying between the electrodes is selectively processed and the electrodes remain intact. Therefore, this method is not very flexible.
  • the use of a laser is often expensive.
  • the invention has for its object to provide a simplified method for producing an OPV module.
  • the method should also allow the production of an OPV module with a larger geometric fill factor. Furthermore, the method should have the greatest possible design freedom with regard to the production of the OPV module.
  • Another object is to specify an OPV module which can be produced by means of the method.
  • the object is achieved by a method having the features of claim 1 and an organic semiconductor device with the features of claim 14.
  • Advantageous embodiments, developments and variants are the subject of the dependent claims. In this case, the refinements and advantages cited in connection with the method also apply analogously to the organic semiconductor component.
  • this is fabricated as a multilayer structure and comprises an upper electrode, a lower electrode and an active layer disposed between the electrodes.
  • a via is formed, which is formed by a conductive ink, which is printed only in a predetermined pressure range for the via.
  • at first one of the two electrodes is formed as a lower electrode.
  • the active layer is applied.
  • the ink for making the via is printed either before or after the application of the active layer. For this purpose, a printing method is used in particular.
  • the advantages achieved by the invention are in particular that the production of the organic semiconductor device and in particular the formation of the via through the printing of the ink is particularly simplified.
  • the formation of the through-connection by means of printed ink makes it possible in particular to use a printing method by means of which a plated-through hole with particularly small dimensions, in particular with a particularly small width and length, can be produced. In particular, it is thus possible to manufacture an organic semiconductor device with an improved filling factor and, correspondingly, with improved efficiency.
  • the printing of the ink that is to say in particular the printing of the plated-through hole, also advantageously makes possible a free design of the plated-through hole, in particular its shape and shape, as a result of which the organic semiconductor component as a whole is particularly free to design.
  • the via is formed directly as a three-dimensional connection between the two electrodes.
  • the ink merely forms the through-connection, ie the ink is not used to form the electrodes and generally does not serve to form other parts of the semiconductor component.
  • the applied ink therefore extends only in the direction between the two electrodes and has no laterally extending portions. Rather, the electrodes are formed separately from the via. With the printing of the ink therefore only that material is applied, which is needed to form the via.
  • the direct formation of the via eliminates in particular the need for a mask and / or a sacrificial layer. Therefore, a masking technique is advantageously dispensed with. Thereby, i. By dispensing with additional masking steps, the method thus has an advantageously reduced number of manufacturing steps compared to conventional methods and is generally less expensive.
  • the required structured formation of the plated-through holes is achieved exclusively by the (highly accurate) location-selective printing of the ink. By dispensing with a sacrificial layer of the material cost in the manufacture of the semiconductor device is also reduced.
  • the organic semiconductor device is an OPV module, that is, an organic photovoltaic element.
  • OPV module an organic photovoltaic element.
  • This is particularly suitable for the preparation by means of the above-mentioned method.
  • an organic semiconductor component designed as an OPV module is used.
  • the description applies mutatis mutandis to any organic semiconductor devices.
  • Conceivable for example, a configuration as organic light emitting diode, organic electrochemical cell, organic field effect transistor, organic thin film transistor, organic photodetector, laser diode, Schottky diode, photoconductor, photodetector or thermoelectric component.
  • the OPV module comprises at least two cells each having an upper cell electrode and a lower cell electrode, the upper cell electrodes being formed as sub-electrodes of the upper electrode and the lower cell electrodes being sub-electrodes of the lower electrode.
  • the lower electrode comprising a number of lower sub-electrodes is formed. This is preferably done on a suitable substrate, for example PET. Subsequently, the active layer and the via are applied.
  • the application of the ink and thus in particular of the via takes place by means of a printing process, in particular a high-resolution printing process, for example by means of inkjet printing, gravure printing, flexographic printing, screen printing, transfer printing or slot die coating, so-called slot-the coating.
  • the ink is preferably printed exclusively in a predetermined printing area, in which the through-connection is to be formed.
  • the upper electrode comprising a number of upper sub-electrodes is formed.
  • the upper part electrode for forming a series connection of a number of cells are suitably connected electrically conductively to the lower part electrode by means of the plated-through holes.
  • the predetermined pressure range is in particular exactly the area in which the via is subsequently formed and thus marks the extent of the plated-through hole.
  • the pressure range is determined in particular by the planned interconnection of individual cells of the semiconductor device, i. in which way the electrodes should be contacted with each other.
  • the substrate serves in particular for improved handling of the OPV module and is comparatively thick with respect to the electrodes and the active layer.
  • the lower electrode is preferably made of a transparent, conductive oxide, for example, indium tin oxide, the upper electrode, for example made of silver.
  • the active layer is preferably applied flat in the printing area, whereby in particular a more complex, structured application can be avoided and the OPV module can be manufactured more easily.
  • Structured application means that the active layer is not applied as a continuous layer but as a plurality of subregions separated from one another by means of at least one interruption. The interruption is used in this case, in particular for the preparation of the training of Naturalkon- takttechnik.
  • flat is understood in particular that the active layer in the area of the subsequent vias continuously, that is initially applied without interruption.
  • an ink which penetrates the active layer in the printing area is used on the surface-applied active layer for printing the through-connection.
  • additional structuring that is to say the formation of at least one interruption for introducing the through-connection.
  • the formation of the interruption and the formation of the via takes place simultaneously during the printing of the ink.
  • the ink contains a solvent for penetrating the active layer in the printing area.
  • the solvent is in particular also a solvent for the material of the active layer and dissolves it accordingly in the pressure range. In this way, in particular, an interruption of the active layer in the pressure region arises.
  • the ink includes, for example, silver particles as a conductive material and a methanol / anisole mixture as a solvent.
  • the ink expediently has a low surface tension, preferably in the region of 10 up to 100 mN / m.
  • a suitable viscosity of the ink is in the range of 1 to 30 mPas in ink jet printing.
  • the value of the viscosity in a screen printing method is preferably significantly higher than in inkjet printing.
  • the ink is first printed in the areas provided for the vias prior to the application of the active layer.
  • the through-contact is formed from the printed ink.
  • the active layer is thus applied subsequently and in particular over the ink over the entire surface. In the area of the ink, the active layer is then broken, so that the via is formed.
  • a thermal treatment of the ink takes place, for example in a sintering process.
  • a heating to a temperature in the range of, for example, 50 to 200 ° C takes place.
  • This temperature is maintained for a few minutes, for example 5 minutes.
  • the ink forms a somewhat stronger conductor structure.
  • the solvent of the ink is evaporated and the particles are baked together, but without forming a melt.
  • the conductor structure is therefore formed directly on the lower electrode and before the application of the active layer and the upper electrode.
  • the active layer is applied flat and displaced in the pressure range of the via.
  • the active layer is applied in a gravure printing method in which excess material is removed by means of a doctor blade so that the conductive ink or the conductor structure is exposed, thereby forming the via and is subsequently connectable to the upper electrode.
  • a procedure is also referred to as doctor blading.
  • the OPV module is therefore particularly easy to manufacture.
  • dewetting takes place when the active layer is applied in the printing region, which ensures in a particularly simple manner that the plated through hole is not covered by the active layer.
  • the ink has a plurality of particles with a predetermined mean particle size and the active layer is applied with a predetermined layer thickness, wherein the average particle size is greater than the layer thickness.
  • the ink has, for example, silver clusters.
  • the particles have a mean size of approximately between 0.5 ⁇ and 5 ⁇ and the active layer is applied with a layer thickness of approximately between 50 nm and 500 nm. This ensures, in particular, that the conductor structure formed by means of the ink projects sufficiently beyond the active layer and is not covered by it.
  • the ink is applied in particular only in the smallest possible pressure range, whereas the electrodes are formed in particular over a large area and thereby extend large parts of the OPV module.
  • the ink is preferably applied in a separate process step from the formation of the electrodes. In general, therefore, by printing the ink 3-dimensional structures in the form of individual steles, columns or continuous strips or walls are formed, which are typically formed in a grid to each other.
  • an ink which contains a material with good conductivity, for example silver or gold. Since these materials are expensive, however, the especially more material-intensive electrodes are preferred. se made of a different material than the feedthrough. This makes it possible to manufacture the electrodes in particular less expensive than when using the same material. It is also possible to select particularly suitable materials for the electrodes and for the through-connection.
  • the two electrodes and the active layer are advantageously also formed by means of a printing process.
  • the method is therefore expediently a multi-stage printing process, in which preferably all layers are produced in each case by means of a printing process.
  • the method is a roll application method, whereby the OPV module can be manufactured particularly inexpensively.
  • FIG. 1 schematically shows the structure of an OPV module in a sectional view
  • FIG. 2 is a schematic plan view of the OPV module according to FIG. 1,
  • FIG. 1 and 2 show an organic semiconductor device 2, which is designed here as an OPV module 2, FIG. 1 clearly showing its multilayer structure.
  • the OPV module 2 comprises an upper electrode 4, a lower electrode 6 and an active layer 8 arranged between the electrodes 4, 6.
  • the upper electrode 4 is subdivided into a number of upper part electrodes 4 ', that is to say into sections which are in particular electrically separated from one another.
  • Each of these upper sub-electrodes 4 ' comprises a narrow bus bar 10, which is made of silver, for example, and forms a corresponding grid on the upper side O of the OPV module 2.
  • the bus bar 10 is not a separate part but a component of the upper electrode 4.
  • each of the upper part electrodes 4 ' comprises a wide area contact 12 extending across a predetermined portion 8' of the active layer 8 in comparison to the bus bar 10.
  • the surface contact 12 is formed, for example, as a grid electrode.
  • the lower electrode 6 is subdivided by means of a number of insulation sites 14 into a number of electrically separate, lower sub-electrodes 6 '.
  • one of the upper part electrodes 4 ' forms, with one of the lower part electrodes 6' and a section 8 'of the active layer 8, a cell 1 6.
  • a number of plated-through holes 18 are provided in the active layer 8 which extend through the entire active layer 8 and from the lower electrode 6 to the upper electrode 4.
  • one through-connection 18 connects the upper part electrode 4 'of a first cell 1 6 to the lower part electrode 6' of a second cell 1 6 adjacent to the first cell 1 6. In this way, a series connection is formed.
  • FIG. 2 shows the OPV module 2 according to FIG. 1 in a plan view. Clearly visible are the wide in comparison to the bus bars 10 surface electrodes 12. These extend here in particular in the conveying direction F of a not shown here in detail roller printing system, which is used to manufacture the OPV module 2. Alternatively, however, there is a different orientation.
  • the plated-through holes 18 are here in particular not continuously formed in the conveying direction F, but only in sections. In a variant of the OPV module 2, the plated-through holes 18 are, however, designed to be continuous.
  • a method step of a method for producing the OPV module 2 according to FIG. 1 is shown in FIGS. 3A to C. In this case, in a first step illustrated in FIG.
  • a semifinished product which comprises the lower electrode 6 and the active layer 8 applied thereto.
  • the active layer 8 is formed flat, that is, continuous and not divided into sections isolated from each other, whereby the active layer 8 is particularly easy to produce.
  • the active layer 8 is made of the polymers P3HT and PCBM, the lower electrode 6 'of a transparent, conductive metal oxide.
  • a via 18 is printed, as shown in FIG. 3B.
  • an ink 22 is printed on the active layer 8 in a printing area D by means of a printer head 20.
  • the ink 22 contains, in particular, a solvent which dissolves the active layer 8 in the printing area D and in this way enables the formation of a via 18 passing through the active layer 8. This is thus in particular connected directly to the lower electrode 6.
  • the ink 22 contains as solvent a mixture of methanol and anisole. In this mixture, silver clusters are dispersed as a conductive material.
  • an interruption of the active layer 8 is now created and, in particular, at the same time a conductive material for the production of the via 18 is provided.
  • imprinting for example by means of an inkjet printing process, also referred to as inkjet printing, it is possible, in particular, to produce a plated-through hole 18 with particularly small dimensions, for example a width B of approximately 60 ⁇ m.
  • the upper electrode 4 is applied and connected to the lower electrode 6 by means of the plated-through hole 18.
  • the two electrodes 4, 6 as a plurality of partial electrodes 4 ', 6'
  • the partial electrodes 4 ', 6 ' according to the electrical requirements for the OPV module 2 to connect.
  • the upper electrode 4 for example, silver is vapor-deposited.
  • FIGS. 4A to D A method step of an alternative method for producing the OPV module 2 is shown in FIGS. 4A to D.
  • the plated-through holes 18 then form a free-standing conductor structure 24 on the lower electrode 6.
  • a thermal treatment for example a sintering process by means of which, in particular, the electrical conductivity of the printed ink 22 is adjustable, is suitably effected.
  • the active layer 8 is applied in a second step. This is shown in Fig. 4B.
  • the material used to form the active layer 8 is applied flat, that is to say in particular continuous.
  • Fig. 4C the result of a third step is then shown, in which the active layer has been dried. Since the solution has only a low solids content, for example 1 to 10%, the applied film is correspondingly greatly reduced by drying.
  • the active layer is initially as a so-called wet film about 1 to 10 ⁇ strong and after drying as a so-called dry film only about 50 to 500 nm.
  • the vias 18 are also made of a material that of the active layer. 8 is only poorly wettable.
  • the ink 22 comprises a plurality of dispersed in a solvent particles, each made of a conductive material, such as silver clusters, with an average diameter of about 500 nm. In a variant, it is then possible, the active layer.
  • the material of the active layer 8 is then displaced from the applied conductor structure 24 and accumulates on the remaining surface.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un composant semi-conducteur organique (2), notamment un module OPV, qui est fabriqué en tant que structure à plusieurs couches, comprenant une électrode supérieure (4), une électrode inférieure (6) et une couche active (8) disposée entre les électrodes (4, 6), un contact traversant (18) étant conçu pour la liaison électrique des deux électrodes (4, 6), caractérisé par le fait que la mise en contact traversant (18) est réalisée par une encre conductrice (22), qui est imprimée uniquement dans une zone d'impression (D) prédéterminée pour la mise en contact traversant (18). L'invention concerne en outre un composant semi-conducteur organique (2) fabriqué au moyen d'un tel procédé.
EP15747757.1A 2014-07-17 2015-07-16 Procédé de fabrication d'un composant semi-conducteur organique et composant semi-conducteur organique Pending EP3170210A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014213978.3A DE102014213978A1 (de) 2014-07-17 2014-07-17 Verfahren zur Herstellung eines organischen Halbleiterbauteils und organisches Halbleiterbauteil
PCT/EP2015/066356 WO2016009019A2 (fr) 2014-07-17 2015-07-16 Procédé de fabrication d'un composant semi-conducteur organique et composant semi-conducteur organique

Publications (1)

Publication Number Publication Date
EP3170210A2 true EP3170210A2 (fr) 2017-05-24

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Application Number Title Priority Date Filing Date
EP15747757.1A Pending EP3170210A2 (fr) 2014-07-17 2015-07-16 Procédé de fabrication d'un composant semi-conducteur organique et composant semi-conducteur organique

Country Status (3)

Country Link
EP (1) EP3170210A2 (fr)
DE (1) DE102014213978A1 (fr)
WO (1) WO2016009019A2 (fr)

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WO2012101207A2 (fr) * 2011-01-26 2012-08-02 Technical University Of Denmark Procédé de connexion électrique de dispositifs photovoltaïques
WO2013152952A1 (fr) * 2012-04-10 2013-10-17 Danmarks Tekniske Universitet Module photovoltaïque

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