EP3169998A1 - Preconcentrator for adsorbing/desorbing at least one component of a gas - Google Patents

Preconcentrator for adsorbing/desorbing at least one component of a gas

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Publication number
EP3169998A1
EP3169998A1 EP15730735.6A EP15730735A EP3169998A1 EP 3169998 A1 EP3169998 A1 EP 3169998A1 EP 15730735 A EP15730735 A EP 15730735A EP 3169998 A1 EP3169998 A1 EP 3169998A1
Authority
EP
European Patent Office
Prior art keywords
microstructure
gas
microchannels
semiconductor substrate
according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15730735.6A
Other languages
German (de)
French (fr)
Inventor
Ignaz Eisele
Maximilian Fleischer
Harry Hedler
Markus Schieber
Jörg ZAPF
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102014213874.4A priority Critical patent/DE102014213874A1/en
Application filed by Siemens AG filed Critical Siemens AG
Priority to PCT/EP2015/063293 priority patent/WO2016008660A1/en
Publication of EP3169998A1 publication Critical patent/EP3169998A1/en
Application status is Withdrawn legal-status Critical

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J15/00Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/28Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
    • B01J20/28014Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their form
    • B01J20/28033Membrane, sheet, cloth, pad, lamellar or mat
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/28Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
    • B01J20/28054Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their surface properties or porosity
    • B01J20/28095Shape or type of pores, voids, channels, ducts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0011Sample conditioning
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0011Sample conditioning
    • G01N2033/0019Sample conditioning by preconcentration

Abstract

The invention pertains to a microstructure (12) for adsorbing/desorbing at least one gas component of a gas supplied to the microstucture (12), the microstructure (12) comprising a semiconductor substrate (14) with a bottom (16) and a top (18), wherein a plurality of microchannels (20), which extend from the bottom (16) to the top (18) of the semiconductor substrate (14), are provided. A top surface (22) of each of the microchannels (20) is configured to adsorb and/or desorb the at least one gas component when the gas is passed through the microchannels.

Description

description

Preconcentrator for adsorbing and / or desorbing at least one component of a gas

The invention relates to a microstructure for adsorbing and / or desorbing at least one component of a gas of the microstructure of the supplied gas comprising a Halbleitersub ¬ strat with a bottom and a top. The invention also relates to a method for producing a microstructure, to an apparatus for detecting at least one gas component with a microstructure and to a method for operating a device. The direct determination of volatile organic compounds (Volatile Organic Compounds, VOCs) in complex mixtures is important for human loads in the environment, in the De ¬ tektion of diseases in determining the air quality in biomedical diagnosis and in many others, the - special health-related contexts. Such complex mixtures may be gases, for example, where the volatile organic components are gas components. Such gas components can be, for example, toxic gases in ambient air or evaporated explosive quantities which are to be measured during explosive substance detection. An important measure of the detected sizes so the nachzuwei ¬ send gas components is their concentration. For many substances to be detected, however, the concentration is near or below the resolution limit of current detector systems.

For the detection of the concentration of gas components, in particular of low concentrations of the gas components within the gases, known from the prior art devices which are adapted to adsorb and / or desorb the gas components. By means of these devices, which are referred to below as Prekonzentratoren, components of gases, for example, on a Surface of the device are enriched and released after a predetermined time to supply them to a measuring device. Macroscopic and microscopic structures are known from the prior art as preconcentrators. Makroskopi ¬ cal structures generally consist of a Gassammei- tube, which are filled with a gas-collecting plastic granules or activated carbon. Through this tube a certain amount of air is pumped examples play, during Samm ¬ ler is cold. The temperature of the collector corresponds to at most the room temperature. Thereafter, the gas collection tube is heated rapidly and flushed with a gentle gas flow, whereby the rapidly desorbing gas can be fed concentrated to a measuring device, for example a sensor or a gas chromatograph. The macroscopic structures have the disadvantage that they usually have a large space requirement and thus the possibilities of use of the macroscopic Prekonzentratoren are limited.

Micromechanical structures comprise an etched channel plate or a structure which, for example, a rough may have upper ¬ surface. The etched channel or plate structure may be coated with an adsorbent material. The microscopic assemblies of the prior art have the disadvantage that the surface of the micromechanical ¬ African structures and thus their collection capacity are small. To increase the collection capacity of the microscopic structures, a certain length must be maintained in the etched channel or plate structure in the gas flow direction. This results in the disadvantage that during the desorption process, retention or gas separation effects occur, as in a gas chromatograph, so that the gas can not be used completely for a sudden change in concentration in the form of flow injection. Another micromechanical set-up is described in the article in Microchemical Journal 98 (2011) 240-245 "Characterization of poly (2, 6-diphenyl-p-phenylene oxide) films as adsorbent for microfabricated preconcentrators" (Bassam, Alfeeli, Vaibhav Jain, Richard K. Johnson, Frederick L. Beyer, James R.

Heflin, Masoud Agah). In this case, so-called micro-preconcentrators are described which have a large number of three-dimensional microcolumns. Although these micro-columns have a greater surface area and therefore a greater collection capacity than the etched channel or plate Struk ¬ ture, but the micro-columns are usually unstable.

It is an object of the present invention to realize a reliable, stable and miniaturized structure by means of which even low concentrations of gas components can be detected.

This object is achieved by a microstructure, a method for producing the microstructure, a device with a microstructure and a method for operating the device with the features according to the respective independent claims. Advantageous embodiments of the invention are the subject of the dependent claims, the description and the figures.

The microstructure according to the invention serves for adsorbing and / or desorbing at least one gas component of a gas supplied to the microstructure and comprises a semiconductor substrate having a bottom side and a top side. The microstructure also includes a plurality of micro-channels, which the underside of the micro-structure, each extending from the bottom to the top of the semiconductor substrate, and therefore on the top side of the micro ¬ structure, wherein a surface of the respective micro-channels for adsorbing and / or desorbing the at least one gas component is formed when flowing through the gas through the respective microchannels. By means of the microstructure according to the invention, therefore, a preconcentrator can be realized which can bind and / or release gas components of a gas. Such a gas component may comprise, for example, toxic gas molecules in air or molecules of a volatile component in respiratory air ¬ a human. However, the preconcentrator can also be used in liquids, thereby adsorbing and / or desorbing components of a liquid flowing through the microchannels.

For example, silicon may be used as the semiconductor substrate. This semiconductor material can also called micropores with a large An ¬ number of microchannels are interspersed. Characterized a high-density array of micro channels is formed, each of said micro-channels produces a continuous Ver ¬ bond from the top surface of the semiconductor substrate to the lower ¬ side of the semiconductor substrate. The microchannels can be arranged parallel to each other in a periodic order. Thus, it is possible for a gas to flow from the top of the semiconductor substrate through the microchannels to the bottom of the semiconductor substrate, for example. The gas enters the microstructure through openings in the microchannels, for example on the upper side of the semiconductor substrate, flows through the microchannels and flows out through openings of the microchannels on the underside of the semiconductor substrate. When flowing through the Ga ¬ ses a gas component may comprise at least adhere to the surface of the respective micro-channels. By means of the Mikrokanä ¬ le, the surface of the semiconductor substrate on which a gas component may be adsorbed at least to the enlarged up to three hundred times in comparison to the base surface of the semiconductor substrate without the microchannels ¬ the. By this extremely increased surface area to accommo ¬ re detection limit can be used for the concentration of the at least one gas component, so the number of molecules of at least one gas component to be moved about two orders of magnitude. Particularly preferably, the surface of the respective microchannels is formed by a surface structure of the respective microchannels on its inner wall. In order to increase the adsorption rate of the at least one adsorbed gas component of a supplied gas, a surface structure may be formed on the inner wall of the microchannels, to which the components of the supplied gas and / or the supplied liquid can be bound particularly well. Thus Kings ¬ nen the adhesion properties of the surface of the microchannels to be improved.

Preferably, the surface of the respective microchannels is formed by a coating which is applied to an inner wall of the respective microchannels. Such coatings, which are also referred to as adsorbents, may be, for example, porous polymers such as Tenax® TA, which in their approximately 0.2 micrometer-sized pores, for example, can collect all types of gases in the air. Further suitable coating materials are, for example, Carboxes®, silica gel, crystalline materials (MOFs) or zeolites. These materials are considered particularly powerful Adsorben ¬ tien since they have particularly good adhesion properties for play, in ¬ gas components and can bind in a particularly advantageous manner gas components. The coating can be realized for example by vapor deposition of the adsorbents on the inner walls of the microchannels.

In one embodiment, it is provided that the microstructure has a tempering element for tempering the semiconductor substrate. By means of the temperature-may be the Mik ¬ rostruktur, in particular, the semiconductor substrate is heated and / or cooled. By cooling the semiconductor substrate, for example by a thermoelectric Peltier cooler, the adsorption of the at least one gas component can be multiplied. In addition, heating of the semiconductor substrate can be made possible by means of the tempering element. By quickly heating up the preconcentrator, it can accumulate on the surface of the microchannels Molecules is to be placed at least one gas component suddenly released ¬, thus desorbed. Thus takes place near ¬ ren surrounding the structure enrichment of concentration many times. A preconcentrator, which is made, for example, from silicon, allows desorption temperatures of up to 800 ° C., in particular up to 900 ° C. Due to the good thermal conductivity of the silicon and by the Substituted ¬ staltung of Prekonzentrators as a microstructure which has a very low mass, very fast Aufheizzei- to ten, for example in the range of 10 to 100 milliseconds, at a very low energy consumption, for example in the range from 10 to 100 milliwatts.

It can be provided that the tempering element is arranged on the upper side of the semiconductor substrate. For this, a heating element can for example be brought meandering form on the surface of the semiconductor substrate on ¬ for heating the microstructure. The tempering element can also be designed as a heat-conductive layer. Thus, the temperature control element can particularly space-saving in the microstructure inte ¬ grated be.

The tempering element preferably has a plurality of passage openings which correspond to the microchannels and are arranged in alignment with the respective microchannels. Depending ¬ of the microchannels has an opening, for example, on the top side of the semiconductor substrate, through which the gas can enter the microchannels, and an opening at ¬ play, on the underside of the semiconductor substrate, through which may escape the gas. The temperature-that is, for example, arranged on top of the Halbleitersub ¬ strats, it may be configured so that it does not cover the openings of the micro-channels on the upper surface of the semi-conductor substrate ¬ or closes. For this purpose, the tempering element may have a plurality of passage openings, which may lie congruently on the openings of the microchannels on the upper side of the semiconductor substrate. So ¬ with, all arranged in the semiconductor substrate micro- channels are used for adsorbing and / or desorbing a gas component of a gas supplied to the microstructure.

In an advantageous embodiment, the microstructure has at least one thermal guide element which extends from the upper side to the lower side of the semiconductor substrate. The at least one thermal guide element can therefore be integrated into the preconcentrator in a particularly space-saving manner.

Preferably, the microchannels are arranged in a first region of the semiconductor substrate and arranged at least one guide element in a specific thermi ¬ Various ¬ nen from the first region second region of the semiconductor substrate. The at least one thermal guide element, which can be coupled to an external heat source, for example, can serve for heat conduction. The at least one thermal guide element can be arranged in an edge region of the microstructure. Due to the spatial separation of the at least one thermal guide element and the microchannels, the microchannels can be used fully ¬ constantly for adsorbing and / or desorbing the at least one gas component.

One embodiment provides that the at least one ther ¬ mixing guide element is thermally gekop ¬ pelt with the tempering. Characterized in that the at least one thermal guide element extends from the top to the bottom of the semiconductor ¬ substrate and thereby thermally with the

Tempering element is coupled, the microstructure can be tempered in a particularly simple manner. Thus, a device may for example also ¬ play at the bottom of the micro structure are mounted, which via the feeds the temperature-conducting element, at least one thermal energy for heating and / or cooling the semiconductor substrate.

More preferably, each of the microchannels has a length of greater than 100 microns and / or a diameter of less than 20 microns. Due to the great length of the micro-channels have a particularly large surface area of the Mikroka ¬ ducts and thus a particularly high collection capacity of the micro ¬ channels can be realized. Due to the small micro-channel diameter, a particularly large number of microchannels can be arranged in the semiconductor substrate.

The invention also relates to a method for producing a microstructure. The method includes providing the semiconductor substrate and inserting the plurality of

Micro channels into the semiconductor substrate by means of an electro ¬ chemical etching process. As the semiconductor substrate at ¬ a silicon wafer can be used as play, which is patterned by the etching method. For this purpose, for example, the electrochemical etching process PAECE (Photo Assisted Electrochemical Etching) can be used

(Literature: Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications Volker Lehmann Copy ¬ right © 2002 Wiley-VCH Verlag GmbH ISBNs:... 3-527-29321-3 (hardcover); 3-527-60027-2 ( Electronic)). With such a technology can be very stable, porous, so provided with microchannels, silicon wafer produce, which also allows very small wall thicknesses of the microchannels of up to 1 micron. The micro-channels, which in orderly ter geometry - for example, periodically and parallel ¬ assigns - penetrate through the entire wafer, thereby have a particularly small diameter. The structure produced by means of PAECE has an extremely high surface area, so that even under certain circumstances the use of an adsorbent, that is to say of an adsorption material, can be dispensed with. But the upper ¬ surface of the microchannels may also be coated with an adsorption material ¬. In addition, by the highly parallelized operation, ie for example the through ¬ of the gas flow through a high number of parallel angeord- Neten microchannels avoided long gas paths.

The invention also includes an apparatus for detecting at least one gas component with a microstructure and an nem gas sensor having a sensor surface for measuring a concentration of the at least one gas component, wherein the microstructure and the gas sensor are arranged to each other such that the sensor surface of the gas sensor faces the underside of the microstructure. The preconcentrator is thus mounted in the shortest possible distance to the sensor surface, ie to the active layer of the gas sensor. The gas ¬ sensor can be designed for example as a so-called gas-FET. The device can thus be realized in a particularly space-saving and compact.

It can be provided that the device has a micropump, which is arranged in such a way to the microstructure, that the micropump facing the top of the microstructure, so that a flow of gas through the microchannels out ¬ through from the top to the bottom of the microstructure. In other words, this means that the gas sensor, the preconcentrator and the micropump are arranged one above the other in the vertical direction. By means of the micropump, the gas with the at least one gas component is supplied to the microstructure via the microchannels. As the gas flows through the microchannels, the at least one gas component is adsorbed to the surface of the inner walls of the microchannels. The Prekonzentrator thus "collects" the molecules of at least ei ¬ nen gas component. The number of adsorbed on the surface of the Mik ¬ rokanäle molecules of the gas component, so the concentration of the gas components can be measured by means of the gas sensor after the desorption of the molecules. Preferably, the apparatus comprises a means for loading ¬ riding provide thermal energy, which is so arranged to the microstructure, that the device is thermally coupled to the thermal conducting element. By means of the device, the tempering of the microstructure can be tempered, that is heated and / or cooled. Due to the thermal guide element, the device for providing thermal energy can be arranged in a particularly space-saving manner within the device. The molecules of a gas com- component, which have accumulated on the surface flows through the micro-channels can be desorbed by, for example, a heating energy is supplied to the temperature-regulating means of the device for providing Stel ¬ len of thermal energy. The gas sensor, in particular its Sensorflä ¬ che it is facing the bottom of the microstructure and thus is in close proximity to the Prekonzen- trator. By a pulse-like heating of the Prekonzentra- tors, the molecules can at least components abruptly solve one Gaskompo- and, for example, fall on the sensor ¬ surface. The gas sensor can measure the concentration of the at least one gas component on the sensor surface. Thus concentrations can be detected by means of the preconcentrator, which would be below the detection limit without the preconcentrator, ie would not be detectable.

The invention also includes a method of operating a device. The method comprises passing a gas into the microchannels of the microstructure for the adsorption of at least one contained in the gas the gas component to a surface of the microchannels and the heating of the microstructures ¬ structure for desorption of the at least one gas component and for supplying the at least one desorbed gas component to a gas sensor for measuring the concentration of the at least one gas component in the supplied gas.

The measures according to the invention with reference to the microstructure ¬ presented preferred embodiments and the advantages thereof apply mutatis mutandis to the present process for producing the microstructure, the device with the micro-structure as well as for the inventive method for Operator Op ¬ ben of the device. In the following, the invention will now be explained in more detail with reference to a preferred embodiment as well as with reference to the accompanying drawings. Show it:

1 shows a schematic representation of an embodiment of the device according to the invention with an inventive microstructure according to the invention, a gas sensor and a tempering;

2 shows a perspective view of the embodiment of the device from FIG. 1;

FIG 3 is a schematic representation of a further From ¬ guide of the apparatus according to the invention with an inventive microstructure, a gas sensor and a temperature-regulating element; and

4 shows a schematic representation of the operation of a further embodiment of the device according to the invention with a structure according to the invention, a gas sensor, a tempering element and a micro-pump.

The exemplary embodiment explained below is a preferred embodiment of the invention. In the embodiment, but the described compo ¬ components of the embodiment respectively represent individual, regardless to be viewed from each other characteristics of the invention, which further develop the invention in each case independently of each other and thus individually or in a different combination overall exhibited as part of the invention to be considered. Furthermore, the described embodiment can also be supplemented by further features of the invention already described. 1 shows a device 10 for detecting at least one gas component of a gas. The device 10 comprises a microstructure 12 and a gas sensor 24. The microstructure 12 serves as a so-called preconcentrator for adsorption

and / or desorbing the at least one gas component. The gas sensor 24 serves to measure a concentration of the at least one gas component. The microstructure 12 is made of a semiconductor substrate 14, for example silicon. The microstructure 12 has a lower side 16 and an upper side 18. Zusätz ¬ Lich, the microstructure 12 in a first region Rl a plurality, that is an array of parallel, especially arranged periodically microchannels 20. The microchannels 20 extend from the lower side 16 to the upper side 18 of the microstructure 12. In this case, a gas can enter at openings of the microchannels 20 on the upper side 18 of the microstructure 12, which flow through microchannels 20 and at the lower side 16 of the microstructure 12 through openings exit the microstructure again. The micro-channels 20 have a surface 22 on which the at least one Gaskompo ¬ component of the flowing gas can be adsorbed. In this case, the surface 22 through the inner walls of the microchannels

20 itself, be formed by a surface structure of the inner walls or by a coating of the inner walls. The Be ¬ coating may comprise an adsorbent material and thus improve the adhesion properties of the surface 22 for the at least one gas component of the gas flowing through.

The microstructure 12 is arranged here in the vertical direction above the gas sensor 24. In this case, the gas sensor 24, which has a sensor surface 26 and an electrical contact 28, is fastened on a carrier element 30. The micro ¬ structure 12 is arranged in the vertical direction across the gas sensor 24, the sensor surface 26 facing the bottom 16 of the microstructure 12th The microstructure 12 is connected to the carrier element 30 by means of a connecting element 32.

On the top 18 of the microstructure 12 is here

Temperature control 34 arranged. The tempering element 34 may be designed, for example, as a heating device or as a thermally conductive layer. The tempering element 34 can be thermally coupled to the tempering element 34 by means of a thermal guide element 36. The thermal Leitele ¬ ment 36 extends from the top 18 to the bottom 16 in a second region R2 of the microstructure 12, wherein the second region R2 is formed here as the outer edge of the microstructure 12. The thermal conductive element 36 is coupled to the connecting element Ver ¬ 32nd The connecting element 32 is designed here as an electrical contact. By means of the step elekt ¬ contact can be supplied to the temperature-regulating element 34 via the guide element 36 ther ¬ mix energy for heating and / or cooling of the microstructure 12th

2 shows the device 10 according to the invention from FIG. 1 in a perspective view. Here is shown that the

Tempering element 34 has passage openings 38. These lie congruently on the openings of the microchannels 20 on the upper side 18 of the microstructure 12. Thus, the openings on the upper side 18 of the microstructure 12 are not covered by the tempering element 34 and / or closed. Thus, each of the microchannels 20 can be flowed through by the gas and used for adsorption and / or desorption of the at least one gas component. The passage ¬ openings 38 and the openings of the micro-channels 20 may, for example a round, an oval, a rectangular or a square cross section.

FIG. 3 shows a further embodiment of the device 10 according to the invention. The gas sensor 24 is fastened on the carrier element 30. The microstructure 12 is here disposed over the gas sensor 24 in Vertika ¬ ler direction. In addition, the microstructure 12 is connected to the carrier element 30 via a device 40 for providing thermal energy. Here, the microstructure 12 in the second region R2 on a plurality of thermal guide elements 36, which extend from the bottom 16 to the top 18 of the microstructure 12. The tempering element 34 is designed here as a thermally conductive layer. The tempering element 34 is thermally coupled by means of the thermal guide elements 36 to the means 40 for providing thermal energy. By means of the device 40 for providing thermal energy, the temperature control element 34 via the thermal Guide elements 36 thermal energy for heating and / or cooling of the microstructure 12 are supplied. The energy for heating can also be supplied by means of electromagnetic radiation. This may be, for example, thermal radiation (infrared), optical light, microwave radiation or inductive heating by alternating current. The device 40 may be formed, for example, as a Peltier heating and cooling system (in a non-specifically illustrated embodiment, which otherwise corresponds to the illustrated embodiment, the are supplied energy for heating by means of electromagnetic radiation: this electromagnetic Strah ¬ lung may, for example, thermal radiation (IR), optical, light, microwave radiation or inductive heating by alternating current to be).

FIG 4 shows a further embodiment of the invention shown SEN device 10 in operation. The invention Vorrich ¬ tung 10 comprises the microstructure 12, the gas sensor 24 and a micro-pump 42, in which case the gas sensor 24, the microstructure 12 and the micropump 42 are arranged in the vertical direction about each other. The microstructure 12 is here connected to the carrier element 30 via the device 40 for providing thermal energy. The sensor surface 26 of the gas sensor 24, which is arranged on the carrier element 24, is the underside 16 of the microstructure 12 supplied ¬ . The micropump 42 is connected to the microstructure 12 via a connecting element 32 so that the upper side 18 of the microstructure 12 faces the micropump 42. The micropump 42 is designed to supply a gas whose flow direction is shown here via arrows 44 to the microstructure 12, in particular the microchannels 20. The gas which has at least one gas to be measured component, enters the micro-channels 20 through the openings of the micro-channels on the upper surface 18 of the microstructure 12, flows through the microchannels 20 and exits the microchannels 20 through the Publ ¬ voltages of the micro-channels 20 on the underside 16 of the Microstructure 12. As the gas flows through the microchannels 20, the gas components contained in the gas, in particular molecules of the gas component, are absorbed by the surface 22 of the microchannels 20. By means of the device 40 for providing thermal energy, the temperature control element 34 can be supplied with energy for cooling the microstructure 12 in order to increase the adsorption rate. In this case, the number of molecules adsorbed on the surface 22 is increased. The gas can flow through the microstructure 12, for example in a predetermined period of time. In this period of time, a certain number of molecules, that is to say a specific concentration of the at least one gas component, are adsorbed on the surface 22 of the microchannels 20.

For desorption, ie for dissolving the molecules of the at least one gas component located on the surface 22 of the microchannels 20, the microstructure 12 can be heated by means of the device 40 for providing the thermal energy. In this case, the tempering can be supplied to the heating energy on the thermal guide elements 36 by means of a ¬ direction 40 34th The temperature-34 is constructed as a heat conductive layer here, which is arranged on the semiconducting ¬ tersubstrat 14, for example silicon.

Due to the high thermal conductivity of silicon, the heat also propagates in the semiconductor substrate 14, whereby the semiconductor substrate 14 is heated. The heating process can be carried out in a short period of time, in particular between 10 and 100 milliseconds. Through this rapid heating the stored gas, thus adhering to the Oberflä ¬ che 22 molecules of at least one gas component can be abruptly released.

In this case, the gas components can fall on the sensor surface 26 of the gas sensor 24, which is suitably arranged in the vicinity. The gas sensor 24 is configured to measure the concentration of the desorbed gas component. Thus, the embodiment shows a more sensitive gas detection by means of a preconcentrator.

Claims

claims
A microstructure (12) for adsorbing and / or desorbing at least one gas component of a gas supplied to the microstructure (12), comprising a semiconductor substrate (14) having a lower side (16) and an upper side (18),
characterized by a plurality of microchannels (20), each extending from the bottom (16) to the top (18) of the semiconductor substrate (14), wherein a surface (22) of the respective micro-channels (20) for Adsorbie ¬ ren and / or desorbing the at least one gas component as it flows through the gas through the respective microchannels (20).
2. microstructure (12) according to claim 1, wherein the surface (22) of the respective microchannels (20) by a surface structure of the respective microchannels (20) is formed on the inner wall thereof.
3. microstructure (12) according to claim 1 or 2, wherein the surface (22) of the respective microchannels (20) is formed by a coating which is applied to an inner wall of the jewei ¬ ligen microchannels (20).
4. Microstructure (12) according to one of the preceding claims, wherein the microstructure (12) has a tempering element (34) for tempering the semiconductor substrate.
5. microstructure (12) according to claim 4, wherein the tempering element (34) on the upper side (18) of the semiconductor substrate
(14) is arranged.
6. microstructure (12) according to claim 4 or 5, wherein the
Temperature control element (34) has a plurality of to the microchannels (20) corresponding passage openings (38) which is arranged in alignment with the respective microchannels (20).
7. microstructure (12) according to any one of the preceding claims, wherein the microstructure (12) has at least one thermal guide element (36) which extends from the top side (18) to the bottom (16) of the semiconductor substrate (14).
8. Microstructure (12) according to claim 7, wherein the microchannels (20) are arranged in a first region (R1) of the semiconductor substrate (14) and the at least one thermal conduction element (36) in one of the first region (R1). ¬ is integrally arranged Various ¬ NEN second region (R2) of the semiconductor substrate (14).
9. microstructure (12) according to claim 7 or 8, wherein the at least one thermal guide element (36) thermally with the
Temperature control element (34) is coupled.
The microstructure (12) of any one of the preceding claims, wherein each of the microchannels (20) has a length of greater than 100 microns and / or a diameter of less than 20 microns.
11. A method for producing a microstructure (12) according to any one of the preceding claims by
- Providing the semiconductor substrate (14), and
 - Introducing the plurality of microchannels (20) in the semiconductor substrate (14) by means of an electrochemical etching process.
12. Device (10) for detecting at least one gas component with a microstructure (12) according to one of claims 1 to 11 and a gas sensor (24) having a sensor surface (26) for measuring a concentration of the at least one gas component, wherein the microstructure (12) and the Gassensor (24) are arranged to each other such that the sensor surface ¬ (26) of the gas sensor (24) of the underside (16) of the Mik ¬ rostruktur (12) faces.
13. Device (10) according to claim 12, wherein the device (10) comprises a micro-pump (42) which is arranged to the Mik ¬ rostruktur (12), that the micro-pump (42) the top side (18) (the microstructure 12), so that a flow of gas through the microchannels (20) passes from the top (18) to the bottom (16) of the microstructure (12).
14. Device (10) according to claim 12 or 13, wherein the device has a device (40) for providing thermal energy, which is arranged to the microstructure (12), that the device (40) thermally with the at least a thermal guide element (36) is coupled.
15. A method of operating a device (10) according to any one of claims 12 to 14, comprising the steps of:
- passing a gas into the microchannels (20) of the microstructures ¬ structure (12) for the adsorption of at least one in the gas con- tained gas component to a surface (22) of Mikroka ¬ ducts (20), and
 - Heating the microstructure (12) for desorption of the at least one gas component and for supplying the at least one desorbed gas component to a gas sensor (24) for measuring the concentration of the at least one gas component in the supplied gas.
EP15730735.6A 2014-07-16 2015-06-15 Preconcentrator for adsorbing/desorbing at least one component of a gas Withdrawn EP3169998A1 (en)

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DE102014213874.4A DE102014213874A1 (en) 2014-07-16 2014-07-16 Preconcentrator for adsorbing and / or desorbing at least one component of a gas
PCT/EP2015/063293 WO2016008660A1 (en) 2014-07-16 2015-06-15 Preconcentrator for adsorbing/desorbing at least one component of a gas

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US7273517B1 (en) * 2005-02-25 2007-09-25 Sandia Corporation Non-planar microfabricated gas chromatography column
US7502109B2 (en) * 2005-05-17 2009-03-10 Honeywell International Inc. Optical micro-spectrometer
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US8448532B2 (en) * 2009-03-18 2013-05-28 The United States Of America As Represented By The Secretary Of The Navy Actively cooled vapor preconcentrator
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US20170189882A1 (en) 2017-07-06
DE102014213874A1 (en) 2016-01-21
CN106662560A (en) 2017-05-10
KR20170035960A (en) 2017-03-31

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