EP3137648A1 - Method and device for continuously suppling a precursor - Google Patents
Method and device for continuously suppling a precursorInfo
- Publication number
- EP3137648A1 EP3137648A1 EP15720624.4A EP15720624A EP3137648A1 EP 3137648 A1 EP3137648 A1 EP 3137648A1 EP 15720624 A EP15720624 A EP 15720624A EP 3137648 A1 EP3137648 A1 EP 3137648A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- precursor
- coating
- reservoir
- removal device
- loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Definitions
- the invention relates to a method for feeding at least one precursor to a plurality of coating modules of a coating device, wherein the coating modules have at least one removal device and at least one supply line formed in some areas as a riser, via which the coating modules have at least one removal device and at least one supply line formed in some areas as a riser, via which the coating modules have at least one removal device and at least one supply line formed in some areas as a riser, via which the
- the invention relates to a coating device having a plurality of coating modules, at least one storage container for a precursor, wherein the coating modules have at least one removal device and at least one partially formed as a riser supply to the removal device, via which the precursor of the removal device of
- a plasma coating process allows very precise control of the layer thickness and allows the application of very thin layers in the nanometer to micrometer range.
- a plasma coating device is, for example, from the European
- Patent application EP 2 636 446 AI known.
- plasma coating due to the plasma-guided coating process, only limited widths of a workpiece to be coated can be processed.
- the plasma-guided coating process due to the plasma-guided coating process, only limited widths of a workpiece to be coated can be processed.
- Plasma coating apparatuses therefore often use a plurality of coating modules, for example more than 5 coating modules
- Ent fortunevoraires a precursor injected into the process gas.
- the precursor present in the supply line of the coating module is entrained by the process gas, atomized and guided with the process gas to the surface to be coated.
- the precursor is the starting material for producing the coating, for example for producing a primer layer, on the strip surface.
- the process gas and the precursor are introduced into the plasma or into the afterglow of the plasma (after glow).
- the amount of precursor introduced into the process gas is dependent on the amount of precursor entrained in the sampling device by the process gas and is thus dependent on the precursor level in the sampling device or the feed line to the sampling device. Therefore, to enable a continuous coating, must be in each
- Removal device of the precursor levels are kept constant while precursors are fed continuously to perform the coating process as evenly as possible.
- each sampling device of a coating module is assigned its own reservoir for the precursor, the filling of which is sufficient, for example, for a complete working layer.
- the object of the present invention is to propose a method and a simple device for coating, with which a precursor of a plurality of coating modules can be provided continuously with a same precursor level and a continuous one Coating operation is guaranteed.
- the object is achieved by a method in that at least one sampling device from a reservoir via a loop line a precursor is supplied, the at least one sampling device in the loop a larger
- Precursor amount is supplied as needed and the excess amount of precursor is returned to the reservoir, wherein the return of the precursor in the ring line, a hydrostatic pressure in each connected to the loop supply line of a single extraction device is generated.
- the precursor level it is possible to set the precursor level to a specific value via the hydrostatic pressure of the precursor in each supply line connected to the storage container and to keep it constant.
- the precursor level in the supply lines of one or a plurality of removal devices is then no longer dependent on the fill level of the
- the loop is fed, for example, with a pump from the reservoir with precursor.
- the level of the precursor remains constant despite removal by the sampling device, as long as precursors back into the
- Reservoir can be returned.
- several removal devices can identify identical precursor levels, and thus several coating modules can be fed with the same amount of coating material for parallel and / or sequential coating of different partial surfaces of a strip, for example a steel strip. It just has to be ensured in that the quantity of precursor supplied to the individual removal devices is greater than the withdrawal quantity, so that the hydrostatic pressure in the supply lines can be established.
- a first embodiment of the method is in the loop in the return of the precursor in the reservoir through a throttle valve, an orifice and / or connected to a riser overflow of the
- Embodiment in that the at least one precursor is supplied via the ring line of a plurality of supply lines of sampling devices.
- Precursor level in the partially formed as a riser supply lines is a Precursor level in the partially formed as a riser supply lines.
- At least one ring line feeds a storage reservoir, which is connected to the removal device of a
- Coating module is connected, wherein the precursor level in
- Storage reservoir is adjusted via the hydrostatic pressure in the supply line. Through the reservoir reservoir pressure fluctuations affect the Feed lines are reduced to the precursor level so that less variation in the coating process occurs.
- excess precursor is returned from the removal device of the coating module in a collecting line separate from the feed of the precursor or in individual lines to the storage container. Headers for the excess precursor simplify the construction of a coating apparatus. However, it is also possible the
- Reservoir automatically refilled upon reaching a minimum level so that in a simple manner a continuous coating operation can be guaran teed.
- a plurality of sampling devices are connected to a reservoir of a precursor, each sampling device via a single loop or a plurality of sampling devices via a common loop for the return of the excess Precursors are connected to the reservoir, are provided in the loop or the ring lines means for supplying the precursor via the loop to the at least one sampling device and in the loop in the region of the return of the precursor in the reservoir means for generating a hydrostatic pressure in the Supply lines of at least one
- Removal device are provided. First, via the means for supplying the precursor via the loop to the at least one sampling device, for example a pump, the precursor in the loop transported to the feed lines. The excess, in the
- Supply lines of the removal devices not removed amount of precursor is returned to the reservoir again.
- the portion of the return of the precursor begins in the flow direction of the precursor to the last supply line of a sampling device.
- means for generating a hydrostatic pressure is generated in the opposite direction of flow of the precursor in the loop and thus in each supply line, a hydrostatic pressure over which the
- Precursor level can be adjusted regardless of the level of the precursor in the reservoir.
- the precursor level in the feed line (s) is always identical, regardless of the cross-section or line length of the feed lines, since the level depends only on the hydrostatic pressure in the loop.
- Supply lines are supplied. By refilling the reservoir then a continuous operation of the coating system can be ensured.
- Removal devices throttle valves, orifices and / or one with a
- throttle valves or orifices With throttle valves or orifices, the hydrostatic pressure in the return of the precursor to the reservoir can be set in a simple manner defined. However, throttle valves and orifices are subject to some wear. In addition, fluctuations in the supply of the precursor, for example, fluctuations in the pumping power of the supply means
- the overflow connected to a riser allows a set hydrostatic pressure to be set without fluctuations in the level due to different pumping capacity, as long as the amount of precursor delivered is greater than the amount of precursor taken. It is conceivable For example, to design the riser variable in height, so that the hydrostatic pressure can be adjusted via the height of the overflow.
- Removal device provided to the reservoir according to a further embodiment, which optionally in one or more manifolds for
- Precursors are returned to the reservoir without affecting the pending in the feed precursor level.
- the coating device According to a further embodiment of the coating device, the
- the excess precursor can, for example, easily be returned via the overflow of the storage reservoir.
- a can also be returned via the overflow of the storage reservoir.
- Storage reservoir are provided without overflow, so that the excess precursor, which can be passed from the removal device in the storage reservoir and used again for coating.
- At least one refill container is provided which communicates with the reservoir via a
- Refill line and at least one refill valve is connected, so that in a simple way, the reservoir can be refilled via the refill.
- the coating device means for determining the level of the precursor in the reservoir and a controller are provided, via which the at least one refill valve for refilling of the reservoir is controlled. This allows automatic filling of the reservoir regardless of the ongoing production process.
- the above object is additionally achieved by using a coating apparatus
- Coating device in particular plasma coating device allows a continuous and economical coating process of piece goods, tapes, metal strips or steel strips.
- the short set-up times and the elimination of production stops due to the refilling of Retschormedien lead to significant advantages in the coil coating. To be favoured
- Metal strips with bonding agent layers for the production of composite sheets consisting of at least two metallic cover layers and at least one, preferably thermoplastic, disposed between the cover layers
- Fig. L schematically shows a first embodiment of an inventive
- FIG. 2 is a schematic view of another embodiment
- Fig. 3 shows a third embodiment of a device in a schematic
- FIG. 1 shows first schematically a first embodiment of a device 1 for continuous precursor delivery according to the present invention.
- Device 1 as part of a feeding device, in particular a
- Plasma coating device has a plurality of removal devices 2, 3, which are used for the supply of not shown here coating modules for coating, for example, metal bands or cargo, not shown here.
- removal devices 2, 3 of not shown here are used for the supply of not shown here coating modules for coating, for example, metal bands or cargo, not shown here.
- Coating modules is by inflowing a process gas 2b, 3b from the
- Supply line 2c, 3c of each removal device of the precursor 6 taken, for example, nebulized and fed to a coating module, not shown.
- the precursor level P is decisive for the amount of precursor that the
- Removal device 2, 3 depending on the parameters of the process gas 2b, 3b extracts.
- the precursor level P in the supply lines 2c, 3c should therefore be kept as constant as possible.
- the plurality of sampling devices 2, 3 are connected via the supply lines 2 c, 3 c and the ring line 4 to the reservoir 5.
- the precursor 6 is pumped by a pump 7 through the loop 4.
- the excess precursor is introduced via the ring line 4 back into the reservoir 5.
- the return of the precursor 6 via the ring line 4 it is guided in the region of the return by means 8 for generating a hydrostatic pressure in each supply line of each removal device before the precursor 6 flows back into the storage container 5.
- the portion of the return of the precursor 6 begins as soon as the excess precursor the last supply line of a sampling device in
- Fig. 1 is provided as means for providing a predetermined hydrostatic pressure in the ring line 4 in the region of the return connected to a riser 8a overflow 8.
- the excess precursor increases until it can drain in the overflow 8 again in the direction of the reservoir 5.
- the Increase of the precursor 6 in the riser 8a is a hydrostatic pressure in
- Feed lines 2 c, 3 c, a constant precursor level P so that a plurality of sampling devices can be supplied with the same amount of precursor continuously.
- the removal devices 2, 3 can work continuously with a constant removal amount due to the constant level P.
- Refill 10 is provided, which is connected via a refill valve 11 and a refill 12 to the reservoir 5.
- a refill valve 11 In the reservoir 5 means for detecting the maximum and the minimum level are indicated. Via a control (5a), the maximum and minimum level of the reservoir can be used to control the refill valve 11. Refilling the
- Reservoir 5 is then carried out, for example, during operation, without interrupting the coating is necessary.
- FIG. 2 shows a further embodiment of a device for continuous precursor delivery, which has two removal devices 2 ', 3'. in the
- the level P of the precursor in the reservoir 2e ', 3e' each
- Removal device 2 ', 3' is in the present embodiment in particular also the position of the designed as an overflow return line for the excess precursor 2d ', 3d' dependent.
- Through the overflow 2d ', 3d' becomes one Maximum level P provided to precursor in the storage reservoir 2e ', 3e'. Due to the storage reservoir pressure fluctuations in the loop do not lead directly to changed coating results, since the precursor level P changes only slightly.
- Coating preferably plasma coating device thus allows a very constant coating process.
- a pump 25, 26, 27, 28 is provided in each ring line, which feeds the amount of precursor which flows through the ring line 17, 18, 19, 20 to the respective removal device.
- the amount of supplied precursor is set higher for each sampling device than that in the respective not shown
- Coating module consumed precursor amount The excess precursor is returned via a return 9 in the reservoir 5.
- a fixed predetermined hydrostatic pressure is built up by the intended overflows 21, 22, 23, 24.
- a refill container 10 is provided, which is connected via a refill valve 11 to the reservoir 5.
- a common manifold 9, which leads from the removal device excess precursor in the reservoir 5, is also provided. It is conceivable that an unillustrated orifice or a throttle valve is provided instead of the overflow connected to a riser.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014106129.2A DE102014106129A1 (en) | 2014-04-30 | 2014-04-30 | Method and apparatus for continuous precursor delivery |
PCT/EP2015/058432 WO2015165758A1 (en) | 2014-04-30 | 2015-04-17 | Method and device for continuously suppling a precursor |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3137648A1 true EP3137648A1 (en) | 2017-03-08 |
Family
ID=53052809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP15720624.4A Withdrawn EP3137648A1 (en) | 2014-04-30 | 2015-04-17 | Method and device for continuously suppling a precursor |
Country Status (5)
Country | Link |
---|---|
US (1) | US10287678B2 (en) |
EP (1) | EP3137648A1 (en) |
CN (1) | CN106232866B (en) |
DE (1) | DE102014106129A1 (en) |
WO (1) | WO2015165758A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3865220A1 (en) | 2020-02-12 | 2021-08-18 | Vito NV | Device for the continuous supply of a liquid compound and related method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112005001190B4 (en) * | 2004-05-27 | 2014-02-13 | Sidrabe Inc. | Device for vacuum coating by metal or alloy evaporation and method with such device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5148945B1 (en) * | 1990-09-17 | 1996-07-02 | Applied Chemical Solutions | Apparatus and method for the transfer and delivery of high purity chemicals |
US5950693A (en) * | 1993-04-28 | 1999-09-14 | Advanced Delivery & Chemical Systems, Ltd. | Bulk chemical delivery system |
FR2812665B1 (en) | 2000-08-01 | 2003-08-08 | Sidel Sa | PLASMA COATING DEPOSITION METHOD, DEVICE FOR IMPLEMENTING THE METHOD AND COATING OBTAINED BY SUCH A PROCESS |
US6604555B2 (en) * | 2000-08-04 | 2003-08-12 | Arch Specialty Chemicals, Inc. | Automatic refill system for ultra pure or contamination sensitive chemicals |
CN2716285Y (en) | 2004-07-07 | 2005-08-10 | 中国航空工业第一集团公司北京航空制造工程研究所 | Precursor automatic feeding device for chemical vapor codeposition and infiltration |
US8555809B2 (en) | 2010-01-14 | 2013-10-15 | Rohm And Haas Electronic Materials, Llc | Method for constant concentration evaporation and a device using the same |
WO2012082198A1 (en) * | 2010-12-13 | 2012-06-21 | Tp Solar, Inc. | Dopant applicator system and method of applying vaporized doping compositions to pv solar wafers |
DE102012000899B4 (en) | 2012-01-19 | 2014-01-16 | Rena Gmbh | Dosing device, treatment station, treatment plant and dosing process |
EP2636446A1 (en) | 2012-03-06 | 2013-09-11 | Vito NV | Plasma mediated method for producing catalysts |
CN103122457B (en) | 2013-01-04 | 2015-04-29 | 西北工业大学 | Chemical vapor deposition solid precursor continuous supply system |
-
2014
- 2014-04-30 DE DE102014106129.2A patent/DE102014106129A1/en not_active Withdrawn
-
2015
- 2015-04-17 CN CN201580021576.9A patent/CN106232866B/en not_active Expired - Fee Related
- 2015-04-17 EP EP15720624.4A patent/EP3137648A1/en not_active Withdrawn
- 2015-04-17 US US15/307,978 patent/US10287678B2/en not_active Expired - Fee Related
- 2015-04-17 WO PCT/EP2015/058432 patent/WO2015165758A1/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112005001190B4 (en) * | 2004-05-27 | 2014-02-13 | Sidrabe Inc. | Device for vacuum coating by metal or alloy evaporation and method with such device |
Also Published As
Publication number | Publication date |
---|---|
WO2015165758A1 (en) | 2015-11-05 |
CN106232866A (en) | 2016-12-14 |
US10287678B2 (en) | 2019-05-14 |
CN106232866B (en) | 2018-12-25 |
US20170058400A1 (en) | 2017-03-02 |
DE102014106129A1 (en) | 2015-11-05 |
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