EP3105819A2 - A reconfigurable electromagnetic surface of pixelated metal patches - Google Patents
A reconfigurable electromagnetic surface of pixelated metal patchesInfo
- Publication number
- EP3105819A2 EP3105819A2 EP15783219.7A EP15783219A EP3105819A2 EP 3105819 A2 EP3105819 A2 EP 3105819A2 EP 15783219 A EP15783219 A EP 15783219A EP 3105819 A2 EP3105819 A2 EP 3105819A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- phase change
- change material
- reconfigurable
- switches
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 45
- 239000002184 metal Substances 0.000 title claims abstract description 45
- 239000012782 phase change material Substances 0.000 claims abstract description 116
- 239000010410 layer Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 239000002365 multiple layer Substances 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000005387 chalcogenide glass Substances 0.000 claims description 6
- 239000005350 fused silica glass Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 32
- 239000000463 material Substances 0.000 description 13
- 238000003491 array Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 9
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000872 buffer Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- -1 Chalcogenide compounds Chemical class 0.000 description 1
- 241000408659 Darpa Species 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/065—Patch antenna array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/01—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the shape of the antenna or antenna system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/06—Means for the lighting or illuminating of antennas, e.g. for purpose of warning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
- H01Q21/0093—Monolithic arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/24—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the orientation by switching energy from one active radiating element to another, e.g. for beam switching
- H01Q3/247—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the orientation by switching energy from one active radiating element to another, e.g. for beam switching by switching different parts of a primary active element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/2676—Optically controlled phased array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
Definitions
- This disclosure relates to reconfigurable electro ⁇ magnetic (EM) apertures and in particular to pixelated
- Reconfigurability of an EM surface can also save assembly time and material costs of having to swap out RF apertures when a new RF application is needed.
- a non-reconfigurable patch antenna is used as the driver for the parasitic pixels, which limits the bandwidth to the patch size.
- reconfigurable electro-magnetic tile comprises a laser layer comprising a plurality of lasers, and a pixelated surface comprising a plurality of metal patches and a plurality of switches, wherein each respective switch of the plurality of switches is in a gap between a first respective metal patch and a second respective metal patch, wherein each respective switch is optically coupled to at least one respective laser of the plurality of lasers, wherein each switch of the plurality of switches comprises a phase change material, wherein the phase change material of a respective switch changes from a nonconducting state to a conducting state when the coupled
- phase change material of a respective switch changes from a conducting state to a non-conducting state when the coupled respective laser lases a second power density of light on the phase change material of the respective switch.
- a method of providing a reconfigurable electro-magnetic tile comprises providing a laser layer comprising a plurality of lasers, and providing a pixelated surface comprising a plurality of metal patches and a plurality of switches, wherein each respective switch of the plurality of switches is in a gap between a first respective metal patch and a second respective metal patch, wherein each respective switch is optically coupled to at least one respective laser of the plurality of lasers, wherein each switch of the plurality of switches comprises a phase change material, wherein the phase change material of a respective switch changes from a non-conducting state to a conducting state when the coupled respective laser lases a first power density of light on the phase change material of the respective switch, and wherein the phase change material of a respective switch changes from a conducting state to a non-conducting state when the coupled respective laser lases a second power density of light on the phase change material of the respective switch.
- FIG. 1A shows a reconfigurable electromagnetic pixelated surface tile
- FIG. IB shows a detail of switches between metal patches in accordance with the present disclosure
- FIG. 2 shows an octagon pixel array on a face of a reconfigurable tile in accordance with the present disclosure
- FIG. 3 shows a graph of an approximate number of pixels in the resonant length dimension for a square patch antenna in accordance with the present disclosure
- FIGs. 4A, 4B and 4C show an example of how the pixelated tile can be reconfigured to accommodate patch elements as the frequency increases from fi to f 2 and from f 2 to in accordance with the present disclosure
- FIG. 5A shows the reflection coefficient into the antenna for simulations of a pixelated tile configured as a patch antenna and then reconfigured in size to three different operational frequencies centered at 8.38, 9.2, and 10.1 GHz
- FIG. 5B shows the corresponding antenna patterns in accordance with the present disclosure
- FIG. 6A shows a measured radio frequency (RF) loss of GeTe switches up to 12 GHz
- FIG. 6B shows 4 switches connecting 4 pixels
- FIG. 6C shows simulated single pole four throw (SP4T) RF switches in terms of different C Qff with R on of 0.5 ⁇ and o f f /R on ratio of 10 4
- FIG. 6D shows a simple equivalent circuit model of GeTe RF switches with PCM resistance and C Df f in parallel in accordance with the present disclosure
- FIGs. 7A, 7B, 7C and 7D compare the RF performance for using DC bias lines for actuation of switches to using optical actuation of switches in accordance with the present disclosure
- FIG. 8A shows a layout of an array of multi-mode vertical cavity surface emitting lasers (VCSELs) and FIG. 8B shows an output optical power and power conversion efficiency in accordance with the prior art;
- FIG. 9 shows a plan view of a VCSEL array layout that may be used to actuate PCM switches around four pixels in accordance with the present disclosure;
- FIG. 10 shows an absorption spectrum of GeTe PCM material showing an absorption depth of 300 to 500 nm at wavelengths of 950 to 980 nm in accordance with the prior art
- FIG. 11 shows an example of a control and driver network for 1250 VCSELS in accordance with the present
- FIG. 12 shows an example of an extension of the control/driver network of FIG. 11 for 16 reconfigurable tiles in accordance with the present disclosure.
- the present disclosure describes an electromagnetic (EM) tile 10, as shown in FIG. 1A, whose top surface consists of a two dimensional periodic array of metal patches 32 separated by small gaps such that the period is much smaller than a wavelength at any frequency of interest. Within each gap between metal tiles 32 is a switch 34 which, when activated,
- electromagnetic structures can be configured, and then by changing states of the switches 34, reconfigured to another electromagnetic structure.
- the tile 10 can also be part of an array of tiles 10 to create larger electromagnetic structures.
- An individual tile 10 or an array of tiles can be reconfigured for a multitude of electromagnetic functions, such as frequency tuned transmit or receive arrays, beam steering, tuned frequency selective surfaces, and transmission line circuits for routing, filtering, and impedance matching.
- the small metal patches 32 and the switches 34 can be considered to make a pixelated reconfigurable electromagnetic surface.
- the switches 34 are actuated using optical signals from lasers (light amplification by stimulated emission of radiation) in a vertical cavity surface emitting laser (VCSEL) array 14.
- VCSEL vertical cavity surface emitting laser
- the optically actuated switches 34 are preferably fabricated from Phase Change Material (PCM), because PCM is bi-stable and can be set into either a conductive or a non-conductive state. Once set, the optical actuation signal can be removed and the PCM will stay in the state to which it was set.
- PCM Phase Change Material
- An integrated reconfigurable electromagnetic tile 10 has radio frequency (RF) and optical layers with interconnecting RF feed lines 16 that can be placed with other reconfigurable electromagnetic tiles 10 to form a larger reconfigurable electromagnetic surface.
- the electromagnetic pixelated tile 10 has metallic patches 32, which have dimensions that are much smaller than a wavelength for a desired radio frequency of operation. Each metal patch 32 may be considered a pixel 32 in the electromagnetic pixelated tile 10. There are a limited number, much less than the number of pixels 32, of non- reconfigurable RF feed structures 16 which connect
- An RF switch fabric has a PCM switch matrix of PCM switches 34 between the pixels 32 with an overlaying fine granulated array of sub- wavelength metallic pixels 32.
- the RF switches 34 allow the electromagnetic pixelated tile 10 to be reconfigured into a multitude of electromagnetic functions.
- the RF switches 34 can be optically actuated and reset using a VCSEL array 14.
- the vertical-cavity surface-emitting laser (VCSEL) array 14 has an array of semiconductor laser diodes with laser beam emissions perpendicular from the top surface, rather than conventional edge-emitting semiconductor lasers. Because VCSELs emit the beam perpendicular to the active region of the laser as opposed to parallel as with an edge emitter, an array of VCSELs can be processed simultaneously, such as on a Gallium Arsenide wafer.
- a control network examples of which are shown in FIGs. 11 and 12, supplies pulsed or CW current to specific lasers in the VCSEL array 14 to reconfigure the tile 10 function.
- a multilayer electromagnetic bandgap structure forms a wideband multilayer ground plane 22 to cover the frequencies of operation of the pixelated tile 10.
- Some advantages of present disclosure are a switch fabric with PCM switches 34 that latch so that no standby power is needed, on state resistance as low as ⁇ 0.3 ⁇ , enabling low RF loss ( ⁇ 0.1 dB) , fast switching - RF switch speed figure-of- merit (1/ (2nRonCoff ) ) of 20 THz, high on/off ratio - >10 4 which provides high isolation (-20 dB) , ultra-linearity IP3 -70 dBm, high power handling - 10 W, and robustness - only need a passivation layer.
- bias lines are required for actuation resulting in significant electromagnetic interference.
- RF MEMS switches and MEMS piston switches are mechanical and may require hermetic packaging for robustness, semiconductor and MEMS switches usually require constant source application, and thus standby power. Furthermore, semiconductor and some material based switches may be nonlinear under high power transmission.
- the reconfigurable pixelated surface tile 30 may have reconfigurable non-driven antenna elements and other circuits between driven antenna elements of the array. Electromagnetic coupling between the driven and non-driven elements allows a grating lobe free beam scan, because the driven and coupled elements can have > ⁇ /2 spacing. This allows reduction of T/R module count by factor of 4 or more. Reconfiguration occurs only on one surface and non-reconfigurable RF feed lines simplify integration. Sub-wavelength pixels allow frequency
- transmit/receive (T/R) module per radiation element for maximum scan angles.
- Reconfiguration of antenna elements requires reconfigurable RF feeds to prevent grating lobes.
- Some switch technologies may require larger pixels and thus reduce the ability to fine tune frequency or beam scanning.
- the ultrafast optical actuation of the switches 34 by VCSEL array 14 has the following advantages.
- Laser bias lines are below the wideband multilayer ground plane 22, which shields the patches 32 from any radio frequency (RF) interference from the potentially thousands of control lines for the lasers.
- RF radio frequency
- a wideband multilayer ground plane 22 can change the effective antenna array ground plane location with frequency, which mitigates the change in bandwidth (BW) vs. frequency.
- BW bandwidth
- use of a single metallic ground plane causes the array bandwidth to vary with frequency.
- a disadvantage of a reconfigurable ground plane is that switches would be needed in the ground plane layer.
- heterogeneous wafer integration may be used to form tiles with micron level control of proximity and alignment.
- microfabrication methods for patterning, bonding and thinning to construct the tiles are independent optimization of sub-layer functions, e.g., PCM switches 34, VCSELS 14 and micro lenses 20 and 26 prior to integration.
- a non-integrated approach for optics would require a much larger system and more power, and a component assembly approach would not provide the alignment accuracy required to focus optical power, have higher power consumption, and would be less efficient.
- FIG. 1A shows a preferred embodiment of the present disclosure. The following describes each layer in FIG. 1A, starting from the bottom of FIG. 1A.
- the bottom layer has transmit/receive T/R modules 12 that condition the RF signal for transmitting and receiving.
- These T/R modules 12 typically consist of power amplifiers, low- noise amplifiers, mixers, phase shifters, switches, and
- the next layer up is the array of vertical cavity surface emitting lasers (VCSELs) 14. These lasers 14 provide the controlling optical signal that actuate or reset the switches 34 between each pixel 32 of the tile 10. There are one or more lasers 14 for each pixel 32. Each VCSEL 14 has control electronics, examples of which are shown in FIGs. 11 and 12, to allow each laser 14 to independently operate at up to two different maximum power levels and have control of the shut-off waveform.
- the VCSEL array 14 can be obtained as a custom product from commercial vendors, for example, Princeton
- micro lens arrays In order to focus the light from the VCSELs at the reconfigurable surface, one or more micro lens arrays are used. If more than one micro lens array is used, then the lens layers may not be contiguous and may appear at different level layers in the tile, such as shown in FIG. 1A, where a collimating lens array 20 is just above the VCSEL array 14 and a focusing lens array 26 is located just below the reconfigurable pixelated surface tile 30.
- Such micro lens arrays can be obtained as a custom product from commercial vendors, such as Jenoptik AG, Carl-Zeiss-Strasse 107739 Jena, Germany.
- the RF non-reconfigurable ground plane 22 has small holes 23 or pin holes having a diameter much less than an RF wavelength for a desired radio frequency of operation, to allow transmission of light from the lasers 14. Since the ground plane 22 is non-reconfigurable , in order to cover a wide bandwidth, the ground plane 22 has a multiple-layer frequency selective reflector, which is well known to persons skilled in the art.
- a multiple-layer frequency selective reflector is a frequency selective surface and may consist of arrays of conducting elements on or between layers of dielectric
- ground plane 22 may also be connected to an overall system ground.
- a substrate 24 may be between the ground plane 22 and the micro lens layer 26.
- the substrate should be optically transparent to allow the optical switch actuation signals to be transmitted through the substrate with minimum attenuation.
- the substrate 24 may be glass, fused silica, quartz, air, or other optically transparent plastics. Also, for VCSELs 14 that operate in the infrared spectrum, other substrates, such as GaAs could be used.
- the pixelated surface tile 30 is the layer that consists of an arrangement of metal patches 32 and switches 34.
- the metal patches 32 may be various shapes including square, rectangular or octagonal, of dimension much less than a
- the pixelated surface tile 30 has a substrate with the metal patches 32 and switch 34 on the substrate.
- the substrate for reconfigurable pixelated surface tile 30 may also be optically transparent for transmission of the optical switch actuation signals.
- the switches 34 are in the gaps between the patches 32, and are preferably of phase change material (PCM) . These PCM switches 34 are directly above one or more VCSELS 14 such that the light from a VCSEL 14 is focused upon the PCM material 34.
- PCM phase change material
- RF input lines 16 connect the transmit/receive module layer 12 to a patch 32 on the reconfigurable pixelated surface tile 30.
- the number of RF lines is dependent upon the minimum and maximum frequencies of operation, the tile size, and the resolution obtainable from the pixels. Once the number of RF lines are determined for an application, the RF input lines 16 are non-reconfigurable .
- An RF signal can be connected to a reconfigurable EM structure on the reconfigurable pixelated surface tile 30 by configuring a transmission line from the patch 32 to which an RF input line 16 is connected by
- non- reconfigurable RF ground lines 25 may be fabricated from the RF ground plane 22 to a patch on the reconfigurable pixelated surface tile 30. These ground lines could serve as an RF ground for reconfigurable transmission line elements on the
- the shape and the inter-pixel gap dimension for the pixels are important design parameters for the RF coupling and/or isolation between pixels 32 and the distributed PCM switch' s 34 aspect ratio, which directly translates to the switch's equivalent resistance. Narrower inter-pixel gaps lead to lower required optical actuation power for the PCM switches; however, this may also result in an increase in the RF coupling that may degrade the phased array performance.
- An example octagonal patches 32 with spaces 33 between them and PCM switches 34 is shown in FIG. 2.
- the octagonal patches 32 allow narrow inter-pixel gaps between the patches 32 with an aspect ratio of 40:1, which reduces the capacitive RF coupling between pixels or patches 32.
- An aspect ratio of 40:1 means that the gap width 36 between the neighboring patches 32 is l/40 th of the length 38 of the PCM switch 34 in contact with the patch 32.
- the number of pixels in a tile is determined by the lowest frequency of interest, while the size of the pixel is determined by the tuning resolution needed at the high frequency end .
- a reconfigurable surface tile with a glass substrate 24 with an array of 25x25 pixels, with each patch or pixel 32 1.5 mm square with PCM switches 34 that have a 5 ⁇ width 36 and a 200 length 38 could be used to create patch antennas tunable from 2 GHz (S-band) to 12 GHz (X-band) .
- the minimum number of pixels or patches 32 required for this example from 2 GHz (S-band) to 12 GHz (X-band) is shown in the graph of FIG. 3.
- FIGs. 4A, 4B and 4C show an example of how the patches 32 in the reconfigurable pixelated surface tile 30 can be reconfigured as the frequency increases from f x to f 2 and from f 2 to f 3 .
- FIGs. 4A, 4B and 4C there are only 4 RF feeds points 40 located around the edges of the tile 10. Each feed point 40 may be connected to one pixel 32.
- the PCM switches 34 are configured to form only one patch 42.
- FIG. 4B for f 2 the PCM switches 34 are configured to form three patches 42, each one connected to an RF feed point 40.
- FIG. 4A for fi the PCM switches 34 are configured to form only one patch 42.
- FIG. 4B for f 2 the PCM switches 34 are configured to form three patches 42, each one connected to an RF feed point 40.
- the PCM switches 34 are configured to form four patches 42 and five non-driven antenna elements 44.
- the four patches 42 are each connected to an RF feed point 40, while the five non- driven antenna elements 44 are not connected to an RF feed point 40.
- the top row of the 3x3 pixel array extends beyond the reconfigurable pixelated surface tile 30 into a next tile.
- electromagnetic coupling between driven patches 42 and non-driven elements 44 are used to suppress grating lobes at all scan angles, and to maintain a low VS R.
- FIG. 5A a single pixelated patch antenna was simulated to be reconfigured for operation at frequencies 8.38, 9.2 and 10.1 GHz through three transformations of the switches 34 to change the antenna patch geometry. A single fixed RF feed point was used.
- FIG. 5A shows graphs 50, 52 and 54 for the reflection coefficient Sn into the antenna for the three configurations.
- FIG. 5B shows the far-field patterns 56, 58 and 59 for the three configurations.
- the PCM switch 34 on and off sheet resistances were assumed to be 100 ⁇ /square and 1000 k /square .
- the simulated efficiency is approximately 80% of that of a nonreconfigurable antenna with the same geometry. 10% of the difference in the efficiency is mainly due to the RF loss contributed by the PCM switches 34 interconnecting the patches or pixels 32.
- Other types of planar antennas can also be configured with a reconfigurable pixelated surface tile 30, such as dipole, bow-tie, fragmented, and fractal antennas.
- the ground plane 22 is not reconfigurable . Because the optimum performance of the EM structure, such as impedance match and radiation gain, depends upon the thickness between the structure and the ground plane, it is necessary that this effective difference varies as the operational frequency changes. This can be accomplished by using multiple levels of frequency selective surfaces for the ground plane 22, which are described in Reference [1] below.
- phase change material (PCM) switches 34 have a known property that if the PCM material is heated to one temperature, approximately 300° C and cooled in a controlled manner, the material will crystallize and become conductive. If the PCM material is heated to a higher temperature,
- Chalcogenide glass is a glass containing one or more chalcogenide elements. Chalcogenide compounds are widely used in rewritable optical disks and phase-change memory devices and by applying heat, they can be switched between an amorphous and a crystalline state, thereby changing their optical and electrical properties and allowing the storage of information.
- An application for phase change material is further described in U.S. Patent Application Serial No.
- the PCM material 34 is fabricated to lie within the gaps of the metallic patches 32 such that when actuated into the on state, the switch 34 would provide a low resistance bridge between two patches, thus effectively connecting them
- antennas transmission lines, or frequency selective surfaces.
- FIG. 6B An example of how the PCM switches 34 is placed in the gaps between the metallic patches 32 is shown in FIG. 6B.
- FIG. 6D shows a simple equivalent circuit model of a GeTe PCM switch 34 with a resistor 60 and a capacitor C off 62 in parallel.
- FIG. 6A shows the measured RF insertion loss for a GeTe PCM switch 34 up to 12 GHz.
- the insertion loss is -0.1 dB up to 12 GHz with an on-state resistance, R on of 1 ⁇ .
- FIG. 6C shows the simulated insertion loss and isolation for an example GeTe SP4T switch 34.
- An insertion loss of ⁇ 0.1 dB is feasible with R on of ⁇ 0.5 ⁇ , and R 0ff /R 0n ratio of 10 4 .
- This low level of on-state resistance is feasible using a PCM switch 34 with a geometry of 5 ⁇ in width 36 and 200 to 400 m in length 38.
- Such a switch 34 is compatible with VCSEL actuation. With an off-state capacitance C off of 10 fF, the RF isolation can be maintained as high as 25 dB.
- the PCM switches 34 can be actuated by placing small heating elements near the switch instead of using optical actuation.
- the bias network for the heating elements would seriously degrade the RF performance of the reconfigurable EM structure. This can be seen in FIG. 7A, which shows the results 64, 65 and 66 for a simulation of the reference
- FIG. 7C A 2-mm-thick glass substrate having a dielectric constant ( ⁇ ⁇ ) of 5.5 was used for the simulation.
- the simulation demonstrates the significant degradation in RF performance for two pixels with a gap of 5 ⁇ between two identical 10 mm long microstrip lines.
- the PCM switches 34 had an on-state sheet resistance of 100 ohms/square.
- the electromagnetic model includes wire lines with a resistor representing a heater grid below each PCM switch locations. Comparison of the insertion loss S21 parameter of the configuration of FIG.
- FIG. 7D clearly shows that the RF transmission along the microstrip line starts to degrade at 2 GHz and becomes huge toward the higher frequencies in the presence of the bias lines, whereas the case with no bias lines, as shown in FIG. 7C, which is the optical actuation approach of the present disclosure, shows no degradation in the RF performance in comparison to the reference microstrip line shown in FIG. 7B.
- the near-field plots along the microstrip line, as shown in FIGs. 7A, 7B and 7C, also clearly demonstrate the attenuated electromagnetic fields in FIG. 7D compared to FIGs. 7B and 7C.
- the attenuated electromagnetic fields in FIG. 7D are caused by the bias lines below the pixels.
- Optical actuation of this disclosure eliminates the need for bias lines for heater grids.
- Optical actuation of the PCM switches 34 starts from a corresponding array of focused high power vertical cavity surface emitting lasers (VCSEL) 14, as shown in FIG. 1A.
- VCSEL vertical cavity surface emitting lasers
- Optical actuation of phase change material (PCM) is already used for consumer rewritable DVDs (DVD+RW) and Blue-Ray disks for dynamic optical storage, and as such, is a fairly mature technology, which is described in References [2] and [3] below. In these applications, pulsed red (650 to 660 nm) and UV-blue (400 to 450 nm) laser diodes with focused
- diffraction-limited spots (0.4 to 0.6 ⁇ ) are used to actuate the PCM material in DVD and Blue-Ray disks, respectively, and change its optical reflectivity for readout.
- the corresponding write and erase optical power densities are on the order of 15 to 30 mW/ ⁇ ⁇ for 10 to 50 ns pulse durations.
- DVDs a single laser is used and the DVD is rotated mechanically while the laser moves radially along the DVD to perform the read and write functions. In the original state, the recording layer of a DVD is polycrystalline .
- phase change material selectively heat areas of phase change material above the melting temperature, so that all the atoms in the area can move rapidly to a liquid state. Then, when cooled, the random liquid state is "frozen in” and the so-called amorphous state is obtained. If the phase change layer is heated below the melting temperature but above the crystalline temperature for a
- the atoms revert back to an ordered state, i.e. the crystalline state.
- each PCM switch 34 is in a one-to-one
- VCSELs Vertical cavity surface emitting lasers
- switches 34 are preferred for actuating the switches 34 because they can transmit an optical beam 18, as shown in FIG. 1A, normal to their substrate surface.
- VCSELs 14 have high power conversion efficiencies of greater than 40%, and are inherently capable of being arranged in a customized two- dimensional (2D) array format.
- the VCSEL array, in conjunction with a matching microlens array, can have a sufficient optical power density to controllably change the phase, and hence the electrical resistance, of the PCM switches 34 in the antenna array.
- High-power VCSEL arrays are also a fairly mature
- FIG. 8A shows a layout of a 2D (two dimensional) array of multi-mode VCSELs 14, which may have a wavelength of 976 nm. Such an array is described in Reference [4] below.
- FIG. 8B shows the output optical power and power conversion efficiency for an array of multi-mode VCSELs 14 delivering a pulse peak power of 800 and a power conversion efficiency of 40% at 976 nm
- the VCSEL array may be driven by a current pulse waveform with a 250 ⁇ pulse width and about 1 A peak current for each VCSEL.
- a peak output power of about 1 W can be obtained with multi-mode VCSELs 14 having an emitting aperture of 50 ⁇ and driven with 1 ⁇ or wider current pulse
- the high peak output power of the pulsed multi-mode VCSELs 14 can be used to heat the PCM material segment 34 between each radiating patch 32 of the reconfigurable pixelated surface tile 30 and hence switch its phase and electrical resistance.
- a power density of about 2 mW/ ⁇ 2 at a pulse width of 700 ns is required to change its initial amorphous phase into polycrystalline, as described in References [5], [6] and [7] below, resulting in more than three orders of magnitude reduction in its electrical
- a power density of about twice this value is required to reverse the PCM 34 to its amorphous phase.
- These optical power density levels increase as the pulse width is decreased. For example, power densities on the order of 15 to 30 ⁇ / ⁇ 2 at 10 to 50 ns pulse widths are currently used for DVD write and erase cycles.
- FIG. 9 shows a plan view of the VCSEL array layout 14 that may be used to actuate PCM switches around four pixels.
- the VCSEL layout 14 follows the grid of gaps between patches 32 in the reconfigurable pixelated surface tile 30.
- VCSEL 9 consists of a linear arrangement of oval-shaped, multi-mode VCSELs 15 with dimensions that can range from 25 to 50 ⁇ along the short axis, and from 50 to 100 ⁇ along the long axis, with a gap of 5 to 10 ⁇ between consecutive emitting elements 15.
- VCSELs 14 are most efficient at wavelengths longer than 950 nm because of the optical gain achievable in the quantum-well structures used. Fortunately, light emitted in the wavelength range of 950 to 980 nm is within the absorption band of the GeTe PCM material, as shown in FIG. 10.
- the absorption coefficient at 950 to 980 nm wavelengths (1.27 to 1.31 eV) is about 2 to 3 x 10 4 cm "1 , as described in Reference [5] below, resulting in an absorption depth of about 300 to 500 nm.
- a set of two custom-designed microlens arrays is placed in between the VCSELs 14 and the reconfigurable pixelated surface tile 30, as shown in FIG. 1A.
- the first microlens array 20 is placed close to the VCSEL array 14 at its focal length in order to collimate the diverging light emitted from the VCSELsl4. The focusing
- microlens array 26 positioned close to the reconfigurable pixelated surface tile 30, focuses the collimated light beams emanating from the first set of microlenses 20 onto the
- This spot size corresponds well with the 5 width 36 of the PCM switch 34 in the example layout of FIG. 2.
- each 25 ⁇ aperture VCSEL 14 with a peak output power of about 1 W driven at a pulse width of 200 ns or less may result in an optical power density of more than 50 mW/ ⁇ 2 incident on the PCM switch 34. This power density level is more than enough to switch the phase of the PMC even at shorter pulse widths.
- the electrical resistivity of GeTe PCM material is typically about 3 x 10 ⁇ 6 Q. in the
- the electrical resistance of a 5 lO ⁇ ⁇ crystallized segment formed by a focused 25 x 50 ⁇ 2 multi-mode VCSEL element 14 is about 3 ⁇ .
- the VCSEL arrays 14 used to optically activate the PCM switches 34 in each reconfigurable pixelated surface tile 30 require appropriate control and drive electronic circuitry.
- the VCSELs 14 may be grouped into blocks of 125 units, each to be addressed in parallel.
- Each unit will require: a laser driver 70 with on/off control, pulse width control, and current level control; and a 1:125 high-speed switch matrix 78 capable of directing the laser driver output sequentially to 125 positions in the tile.
- the laser drive circuit 70 has ten laser driver/switch matrix subsystems, associated buffers and a field programmable gate array (FPGA) control 72 to facilitate simultaneous operation of the ten laser drivers in parallel, with individual laser driver configuration control.
- the relative output position from each switch matrix 78 will be the same for each of the ten laser units in the tile, as the switch matrices are driven in parallel through 1:10 distribution buffers 76 and FPGA control 74.
- 125 FPGA outputs may be applied to 1250 switches 34.
- Ten 10 FPGA control lines 73 are required for laser on/off control and 10 FPGA lines 75 are required for laser driver current control.
- One FPGA line 77 is required to set all laser drivers to either slow or fast.
- FIG. 12 An example of an extension of this approach to a larger tile or to multiple tiles is shown in FIG. 12.
- the network drives 16 pixelated tiles, each with 1250 VCSELs.
- This extension is done simply by inserting 1: 16 distribution buffers 76 and switch matrices 78, as shown in FIG. 12.
- the FPGA control mechanism is the same as in the single tile example of FIG. 11, with 125 switch control and 21 laser driver control lines required. It would be obvious to one skilled in the art to modify this network for other numbers of VCSELs to be controlled within a pixelated tile.
- a reconfigurable electro-magnetic tile includes a laser layer including a plurality of lasers, and a pixelated surface comprising a plurality of metal patches and a plurality of switches, wherein each respective switch of the plurality of switches is in a gap between a first respective metal patch and a second respective metal patch, wherein each respective switch is optically coupled to at least one respective laser of the plurality of lasers, and wherein each switch of the plurality of switches includes a phase change material.
- a reconfigurable electro-magnetic tile comprising: a laser layer comprising a plurality of lasers; and a pixelated surface comprising a plurality of metal patches and a plurality of switches, wherein each respective switch of the plurality of switches is in a gap between a first respective metal patch and a second respective metal patch;
- each respective switch is optically coupled to at least one respective laser of the plurality of lasers
- each switch of the plurality of switches comprises a phase change material; wherein the phase change material of a respective switch changes from a non-conducting state to a conducting state when the coupled respective laser lases a first power density of light on the phase change material of the respective switch; and wherein the phase change material of a respective switch changes from a conducting state to a non-conducting state when the coupled respective laser lases a second power density of light on the phase change material of the respective switch.
- the plurality of lasers comprise a plurality of vertical cavity surface emitting lasers (VCSELs) .
- VCSELs vertical cavity surface emitting lasers
- the reconfigurable electro-magnetic tile of concept 1 further comprising:
- each respective lens of the plurality of lenses focuses light from a respective laser onto a respective switch.
- ground plane between the laser layer and the pixelated surface, the ground plane having pin holes to allow light to be transmitted through the ground plane;
- a diameter of the pin holes is less than a
- the plurality of lenses further comprise:
- a collimating lens array comprising a first plurality of micro-lenses between the laser layer and the ground plane; and a focusing lens array comprising a second plurality of micro-lenses between the ground plane and the pixelated surface.
- optically transparent substrate comprises glass, fused silica, quartz, an optically transparent plastic, or GaAs .
- the reconfigurable electro-magnetic tile of concept 1 further comprising:
- transmit/receive module coupled by an electrical conductor to at least one metal patch of the plurality of metal patches
- the laser layer is between the plurality of transmit/receive modules and the pixelated surface.
- phase change material comprises:
- the reconfigurable electro-magnetic tile of concept 1 further comprising:
- the metallic patches have dimensions smaller than a wavelength for a desired radio frequency of operation.
- a method of providing a reconfigurable electromagnetic tile comprising: providing a laser layer comprising a plurality of lasers;
- respective switch of the plurality of switches is in a gap between a first respective metal patch and a second respective metal patch;
- each respective switch is optically coupled to at least one respective laser of the plurality of lasers
- each switch of the plurality of switches comprises a phase change material
- phase change material of a respective switch changes from a non-conducting state to a conducting state when the coupled respective laser lases a first power density of light on the phase change material of the respective switch; and wherein the phase change material of a respective switch changes from a conducting state to a non-conducting state when the coupled respective laser lases a second power density of light on the phase change material of the respective switch.
- the plurality of lasers comprise a plurality of vertical cavity surface emitting lasers (VCSELs).
- VCSELs vertical cavity surface emitting lasers
- each respective lens of the plurality of lenses focuses light from a respective laser onto a respective switch.
- ground plane between the laser layer and the pixelated surface, the ground plane having pin holes to allow light to be transmitted through the ground plane;
- a diameter of the pin holes is less than a
- a collimating lens array comprising a first plurality of micro-lenses between the laser layer and the ground plane; and a focusing lens array comprising a second plurality of micro-lenses between the ground plane and the pixelated surface.
- optically transparent substrate comprises glass, fused silica, quartz, an optically transparent plastic, or GaAs .
- the method of concept 14 further comprising: providing a plurality of transmit/receive modules, each transmit/receive module coupled by an electrical conductor to at least one metal patch of the plurality of metal patches;
- the laser layer is between the plurality of transmit/receive modules and the pixelated surface.
- phase change material comprises:
- germanium-telluride (GeTe) doped chalcogenide glass germanium-telluride (GeTe) doped chalcogenide glass.
- phase change material has an aspect ratio such that a width of the phase change material across the gap is substantially less than a length of the phase change material along the gap.
- the metallic patches have dimensions smaller than a wavelength for a desired radio frequency of operation.
- a non-conductive state is a state of substantially higher impedance than a conductive state.
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US201461940070P | 2014-02-14 | 2014-02-14 | |
PCT/US2015/015070 WO2015163972A2 (en) | 2014-02-14 | 2015-02-09 | A reconfigurable electromagnetic surface of pixelated metal patches |
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WO2020136026A1 (en) * | 2018-12-28 | 2020-07-02 | Thales | Device with reconfigurable metasurface |
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US6985109B2 (en) * | 2004-04-23 | 2006-01-10 | Honeywell International, Inc. | Reconfigurable aperture with an optical backplane |
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FR3091420A1 (en) * | 2018-12-28 | 2020-07-03 | Thales | RECONFIGURABLE METASURFACE DEVICE |
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