CN108767445A - Reconfigurable multifunctional antenna based on distributed directly drive array - Google Patents
Reconfigurable multifunctional antenna based on distributed directly drive array Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The present invention principally falls into antenna technical field, related with the multi-functional plane of quick agile and quasi- dimensional antenna, and in particular to a kind of restructural Multi-Function Antenna.The Multi-Function Antenna is by the semiconductor plasma and described based on quick, high current, the distribution directly drive array of easy Thin Film Transistor TFT Matrix actuation techniques is integrated in silicon, glass, sapphire, it is constituted on silicon carbide and other planes or curved surface medium substrate, the Multi-Function Antenna can be rapidly, dynamically control constitutes the shape of each radiating element of planar array, size and should correct position, realize the restructural of antenna frequencies, it is polarized restructural, wave beam controls restructural with gain agility, the position of secondary lobe and its restructural of relative level and above-mentioned various combinations, just as two-dimentional printer, the change antenna of rapid agile is from a kind of function to another function, a plane or quasi- dimensional antenna is set to become Multifunctional planar or quasi- dimensional antenna.
Description
Technical field
The present invention principally falls into antenna technical field, related with the multi-functional antenna of quick agile, and in particular to Yi Zhongji
In the reconfigurable multifunctional antenna of distributed directly drive array.
Background technology
In nearest decades, restructural Multi-Function Antenna has become the heat of insider's common interest
Research field is put, this is also promoted for the requirement growing day by day of completely new wireless communication technique and Radar Technology on civilian and military
The fast development of one research field.Different types of Reconfiguration Technologies and realization means have been studied and have been put into practice confirm it is capable
It is effective.
Antenna system has up to ten thousand kinds, each antenna has itself unique function and application field, if this is up to ten thousand
The function of kind antenna is all integrated on an antenna, this antenna has reformed into the antenna of universal type.The ginseng of diagnostic antenna electrical property
Number is working frequency, polarization, gain, main beam direction, antenna pattern, the position of secondary lobe and relative level etc., therefore, can be weighed
Structure includes restructural (multiband work), polarized restructural (linear polarization, circular polarisation, elliptic polarization), the wave beam control of frequency
The position of restructural (beam scanning), secondary lobe with gain agility and its relative level it is restructural (anti-interference) and above-mentioned
Various combinations.
The restructural method of antenna is also diversified, and useful closely spaced array is allowed to the side of rarefaction by control algolithm
Method.For example, the liquid crystal Super-material antenna of kymeta companies of the U.S., although this method can reach scanning for main beam and right
In polarized restructural, but its redundancy unit number is too many, at a time, only uses the radiating element of a part, and
Even if in this way, the phase of its radiating element being used can not be precisely controlled, cause the inefficient of this antenna,
And switching time needs several milliseconds, in some applications, this switching time it is not acceptable that.In addition also useful micro-
Wave PIN diode, gallium arsenide transistor, varactor and MEMS as switching device come to antenna carry out it is restructural, still
This restructural ability and function are limited, and especially diode is nonlinear elements, will produce certain intermodulations.In addition, also having
Antenna pattern is set to change to make radiation pattern change with machinery method, but this method can make antenna
Shared space becomes larger, and antenna can also become too heavy.
The units such as Nankai University, Nanjing space flight and aviation university and Xian Electronics Science and Technology University have carried out lateral PIN solid-states etc.
The research of gas ions reconfigurable antenna, but it is all based on the solution of silicon medium substrate, it is not only upper of high cost in technique realization,
And it is limited its size by semiconductor producing line ability and silicon wafer fabrication process and cannot be made big；Meanwhile said program is simultaneously
The independent innovative technique solution for driving individual plasma is not proposed.Such as Nankai University《Based on grid-shaped cross
To the reconfigurable antenna of the PLC technology of PIN diode》In, it can only be with one group of (minimum 4,2 × 2) plasma conduct
Basic unit carries out Antenna Design and driving, and all plasma units are required to independent power cord by shared programmable electricity
Potential source directly drives, but does not provide specific feasibility process embodiment, in the plasma unit number that needs drive
When numerous, the driving circuit design of the invention will be sufficiently complex, the difficulty and cost realized to requirement on devices higher, technique
It can higher；Two plasma units based on silicon substrate often capable or adjacent each column possess common P injections in the design simultaneously
Area or the injection regions N do not have isolation channel between two neighboring plasma unit, will certainly be interfering with each other if worked at the same time, drop
Low plasma element characteristics, therefore performance, restructural precision and the flexibility of Antenna Design invention all receive a fixed limit
System.
To sum up, antenna it is restructural method it is very more, but its purpose is exactly one, i.e., so that antenna multifunction,
One antenna can realize the function of mutiple antennas, save the space of antenna.
Invention content
In view of the above-mentioned problems, the present invention provides a kind of quick restructural Multi-Function Antenna.The Multi-Function Antenna is by institute
State semiconductor plasma and the distribution based on quick, high current, easy Thin Film Transistor TFT Matrix actuation techniques
It is integrated in structure in silicon, glass, sapphire, silicon carbide and other planes or curved surface medium substrate to directly drive array
The shape for constituting each radiating element of planar array, size and should be can rapidly, be dynamically controlled at, the Multi-Function Antenna
Correct position, restructural, polarized restructural, wave beam control and gain agility restructural, the secondary lobe for realizing antenna frequencies
Position and its relative level restructural and above-mentioned various combinations, just as two-dimentional printer, rapid agile changes
Become antenna from a kind of function to another function, a plane or quasi- dimensional antenna is made to become Multifunctional planar or accurate three-dimensional day
Line.
The first object of the present invention is, substantially single by distributed directly drive array circuit control semiconductor plasma
This first basic unit builds various planes and non-planar antennas (for example accurate three-dimensional Multi-Function Antenna), so that structure
The antenna for building acquisition realizes that restructural, the polarization of antenna frequencies may be implemented in various functions, the Multi-Function Antenna of reconstruct
The control of restructural, wave beam and gain agility restructural, secondary lobe position and its relative level it is restructural and above-mentioned
Various combinations.
Simultaneously in engineer application, the switching between various functions needs the time, and the shorter switching time the better；This
Another mesh of invention is to use this basic unit of semiconductor plasma, makes it conductor or insulator (medium), and profit
With including TFT matrix driving techniques, the distributed directly driving time of drive array and driving precision make it from one
The switching time of kind function to another function is minimum (1~30 μ s), and makes the antenna being made of this basic unit
Precision be highest (generally 50 microns, i.e., 0.05 millimeter).Such precision is for millimeter wave, submillimeter wave or even far infrared
It is enough for the antenna of frequency range.
The present invention is achieved by the following technical solutions：
Restructural Multi-Function Antenna, the Multi-Function Antenna are and described more using semiconductor plasma as basic unit
Function antenna includes distributed directly drive array circuit, passes through described distributed directly each institute of drive array circuit control
The working condition or off working state of semiconductor plasma basic unit are stated, in real time, dynamically constitute the spoke of antenna
Area or non-radiative area are penetrated, and then antenna frequencies, polarization, wave beam control, gain, secondary lobe position and its relative level are controlled
System；Wherein, the working condition is plasmoid, and the off working state is non-plasma state；Wherein, institute
It states distributed directly drive array circuit and is based on Thin Film Transistor TFT Matrix actuation techniques, and the distribution directly drives battle array
Column circuits switching time is short, driving current is big, type of drive is simple.
Further, the distributed directly drive array circuit is used to be that each described semiconductor plasma is basic
Unit separately provides >=and the driving DC voltage of 0.5V and the driving current of 0.1~30mA, switching time be 1~30 μ s, and
Type of drive is to carry out easy matrix form driving to constituting all semiconductor plasma basic units in metallic conduction area.
Further, the semiconductor plasma basic unit and the distributed directly drive array circuit are to pass through
Semiconductor technology is integrated to be fabricated on same medium substrate；In the Multi-Function Antenna, the semiconductor
The basic unit of plasma and the distributed directly drive array circuit are located at the same surface of antenna medium substrates, constitute one
A single layer structure.
Further, the medium substrate is used as host material using silicon, glass, sapphire or silicon carbide, for plane or
Curved surface.
Further, the SPIN knots in the semiconductor plasma basic unit use silicon or metal-oxide semiconductor (MOS)
Material preparation.
Further, the metal oxide semiconductor material is stannic oxide (SnO2), titanium dioxide (TiO2), oxidation
Any one in zinc (ZnO)；Or
The metal oxide semiconductor material is with stannic oxide (SnO2), titanium dioxide (TiO2) or zinc oxide
(ZnO) it is matrix, one or two kinds of elements are formed by semi-conducting material in doped indium, gallium；Preferably, the metal oxide
Semi-conducting material is indium zinc oxide (IZO) or indium gallium zinc oxide (IGZO).
Further, the restructural Multi-Function Antenna is plane Multi-Function Antenna or quasi- three-dimensional multi-functional antenna.
Further, the restructural Multi-Function Antenna is corner-reflector antenna, log spiral antenna, using mode transmission
Frequency-selective surfaces FSS is as any one in the phased array antenna or blade type parting antenna of phase shifter.
Further, the restructural Multi-Function Antenna can realize antenna frequencies it is restructural, polarized it is restructural,
Wave beam controls and gain is quick restructural, secondary lobe and its relative level it is restructural in any one or it is arbitrary two kinds and
It is two or more.
The advantageous effects of the present invention：
The reconfigurable multifunctional aerial array based on distributed directly drive array provided by the present invention, Ke Yi
A variety of antenna functions are realized on one antenna assembly, and from a kind of changes of function to another function required switching time
It is short, musec order can be reached, can particularly simple change array antenna radiating element shape, size and location and to spoke
Penetrate cell configuration, size and location control effectively, realize restructural (the multiband work) of antenna frequencies, polarized weigh
Structure (linear polarization, circular polarisation), wave beam control and restructural (beam scanning) of gain agility, the position of secondary lobe and its relative level
Restructural (anti-interference) and above-mentioned various combinations, and antenna efficiency is high, and beam position is accurate.
The reconfigurable multifunctional aerial array based on distributed directly drive array provided by the present invention, with direct current
Basic unit of the voltage-controlled semiconductor plasma as the omnipotent antenna element of this agile, with this basic unit energy
Form various antennas.Realize various functions, the length dimension of the semiconductor plasma is 50-200 microns,
This size is equivalent to the size of the Pixel Dimensions in TV display screen, utilizes thin film transistor (TFT) (TFT) matrix driving
Technology drives come this basic unit to semiconductor plasma, by this basic unit of semiconductor plasma be based on
Fast, high current, the directly drive array perfect adaptation of the distribution of easy TFT matrix driving techniques together, and are based on
Similar technique can carry out integrated design, manufacture be completed in same producing line, just as building blocks, Multi-Function Antenna can
By semiconductor plasma and to be based on Thin Film Transistor TFT Matrix actuation techniques by TFT panel technique or semiconductor technology
Distribution directly drive array it is integrated in silicon, glass, sapphire, silicon carbide and other planes or curved surface medium base
On plate, various array antennas are constructed, to realize the reconfigurable multifunctional day based on distributed directly drive array
Linear array.
Using based on quick, high current, easy, including TFT matrix driving techniques, distribution directly drives battle array
Row drive come this basic unit to semiconductor plasma, successfully solve existing semiconductor plasma antenna and set
Meter using direct wiring or gets through the process difficulties that hole is connect with driving circuit in dielectric-slab, and is driven by line-column matrix
Mode, multiple control switching circuits can be driven by the same shift register, enormously simplify the complexity of driving circuit, make
More semiconductor plasma units must be driven to be possibly realized, so as to realize the large-sized semiconductor plasma of manufacture
Antenna.Had simultaneously based on quick, high current, easy thin film transistor (TFT) (TFT) Technology design ON-OFF control circuit lower
Cost, compared with using microwave PIN diode, gallium arsenide transistor, varactor and MEMS as switching device come to antenna
Restructural design is carried out, the restructural ability and function of antenna all has a distinct increment.
It is provided by the present invention it is described based on quick, high current, easy distributed directly drive array it is restructural more
Function aerial array, can by the distribution directly drive array based on quick, high current, easy TFT matrix driving techniques
The size of antenna basic unit and the position control accuracy in array environment are increased to 50 microns, far above the sub- wave of tradition
Long-periodic structure reconfigurable antenna design in 1/2-1/8 wavelength dimensions, therefore may be implemented more accurate phase controlling and
Beam position；Also just because of this can only compared in traditional sub-wavelength period architecture reconfiguration Antenna Design under the conditions of array
The poor efficiency that a part of antenna element work is brought, the present invention can make the unit of required operating position in Antenna aperture join
With radiation, there is higher radiation efficiency, lower Radar Cross Section.
The present invention proposes semiconductor plasma basic unit by with metal oxide semiconductor material, such as tin oxide
(SnO2), the materials such as oxide that titanium oxide (TiO2) and zinc oxide (ZnO) and its doping are formed substitute in tradition SPIN knots
Silicon materials form quasi- SPIN structures or NIN structures.Semiconductor plasma basic unit medium substrate material so is just more than
Be confined to silicon, can also be realized in glass, sapphire, silicon carbide and other planes or curved surface medium substrate semiconductor etc. from
The manufacture of daughter antenna.Limitation of the silicon chip to product size and technique producing line is breached, while also effectively reducing product manufacturing
Difficulty and cost.
Description of the drawings
Fig. 1 (a) is the structural schematic diagram of semiconductor plasma basic unit in embodiment；
Fig. 1 (b) is the semiconductor plasma schematic diagram of a layer structure for having in embodiment isolation moat structure；
Fig. 1 (c) is the semiconductor plasma schematic diagram of a layer structure for not having in embodiment isolation moat structure；
Fig. 1 (d) is the semiconductor plasma layer manufacturing process flow based on existing SOI technology in embodiment；
Fig. 1 (e) is to manufacture semiconductor plasma layer manufacturing process based on metal oxide semiconductor material in embodiment
Flow；
Fig. 2 be quick, high current in embodiment, easy distributed directly drive array circuit schematic diagram；
Fig. 3 (a) be in embodiment based on semiconductor plasma unit and quick, high current, it is easy it is distributed directly
The basic structure schematic diagram (schematic top plan view) of the reconfigurable multifunctional aerial array of drive array；
Fig. 3 (b) be in embodiment based on semiconductor plasma unit and quick, high current, it is easy it is distributed directly
The basic structure schematic diagram (schematic cross-section) of the reconfigurable multifunctional aerial array of drive array；
Fig. 3 (c) be in embodiment based on semiconductor plasma unit and quick, high current, it is easy it is distributed directly
The connection relationship diagram of drive array；
Fig. 3 (d) be in embodiment based on semiconductor plasma unit and quick, high current, it is easy it is distributed directly
One beam position schematic diagram of the reconfigurable multifunctional aerial array of drive array；
Fig. 3 (e) be in embodiment based on semiconductor plasma unit and quick, high current, it is easy it is distributed directly
Another beam position schematic diagram of the reconfigurable multifunctional aerial array of drive array；
Fig. 4 is that the one-dimensional electron beam plane of scanning motion aerial array schematic diagram of parallel-plate waveguide feed (is illustrated in section
Figure)；
Fig. 5 (a) is the planar antenna array of the Two-dimensional electron beam scanning and polarization agile of a radial line waveguide feed
Schematic diagram (schematic top plan view)；
Fig. 5 (b) is the planar antenna array of the Two-dimensional electron beam scanning and polarization agile of a radial line waveguide feed
Schematic diagram (schematic cross-section)；
Fig. 6 is the leaky-wave antenna array schematic diagram of rectangular waveguide feed；
Fig. 7 is by the reflectarray antenna schematic diagram constructed by semiconductor plasma；
Fig. 8 is the knife-edge fractal antenna schematic diagram being made of semiconductor plasma this basic unit；
Fig. 9 is by the helical antenna schematic diagram constructed by semiconductor plasma this basic unit；
Figure 10 is the artificial impedance skin antenna schematic diagram of holography being made of semiconductor plasma this basic unit；
Figure 11 (a) is the partially reflecting surface antenna schematic diagram being made of semiconductor plasma this basic unit
(schematic top plan view)；
Figure 11 (b) is the partially reflecting surface antenna schematic diagram being made of semiconductor plasma this basic unit
(schematic cross-section)；
Figure 12 (a) is the mode transmission frequency-selective surfaces phase shifter being made of semiconductor plasma this basic unit
It is formed by the schematic diagram (schematic top plan view) of phased array antenna；
Figure 12 (b) is the mode transmission frequency-selective surfaces phase shifter being made of semiconductor plasma this basic unit
It is formed by the schematic diagram (schematic side view) of phased array antenna；
Figure 13 is the three-dimensional corner-reflector antenna schematic diagram of standard being made of semiconductor plasma this basic unit.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is explained in further detail.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, and
It is not used in the restriction present invention.
On the contrary, the present invention covers any replacement done in the spirit and scope of the present invention being defined by the claims, repaiies
Change, equivalent method and scheme.Further, in order to make the public have a better understanding the present invention, below to the thin of the present invention
It is detailed to describe some specific detail sections in section description.Part without these details for a person skilled in the art
Description can also understand the present invention completely.
Embodiment 1
The present embodiment provides a kind of restructural Multi-Function Antennas, and the Multi-Function Antenna is using semiconductor plasma as base
This unit, and the Multi-Function Antenna includes distributed directly drive array circuit (the distributed directly drive array circuit
Based on Thin Film Transistor TFT Matrix actuation techniques, the distributed directly drive array circuit switching time is short, driving current
Greatly, type of drive is simple), pass through the work shape of distributed directly each basic unit of drive array circuit control
State or off working state, in real time, dynamically constitute antenna radiation area or non-radiative area, and then to antenna it is various electricity join
Number is controlled；Wherein, the working condition is plasmoid, and the off working state is non-plasma state
(medium of insulation).
Using this basic unit of semiconductor plasma and based on quick, high current, easy TFT matrix drivings skill
The direct drive array of distribution of art constitutes the shape of plane or each radiating element of nonplanar array antenna, size and should be
Correct position, realize restructural (the multiband work) of antenna frequencies, polarized restructural (linear polarization, circular polarisation, oval pole
Change), wave beam control and restructural (beam scanning) of gain agility, the position of secondary lobe and its relative level it is restructural (anti-to do
Disturb) and above-mentioned various combinations, change antenna with capable of realizing rapid agile from a kind of function to another function, makes one
Antenna becomes omnipotent antenna.
The semiconductor plasma basic unit and the distributed directly drive array circuit are by described
It is fabricated by sputtering, deposition or etching technics on medium substrate, and the Multi-Function Antenna can pass through TFT panel technique
Or semiconductor plasma and distribution based on Thin Film Transistor TFT Matrix actuation techniques are directly driven battle array by semiconductor technology
It arranges integrated in silicon, glass, sapphire, silicon carbide and other planes or curved surface medium substrate.
This basic unit of semiconductor plasma, with reference to figure 1 (a)：Each semiconductor plasma basic unit 101
Including SPIN diodes, it is set in turn in the oxide layer 107 and medium substrate 106 of SPIN diodes lower part；The SPIN
Diode is set to the surface of the semiconductor plasma basic unit, by intrinsic layer 103, P+104 and N of layer+Layer 105 is constituted；
The SPIN diodes use transversary, the intrinsic layer to be completely exposed to the top of the oxide layer 107, institute
State P+Layer and the N+Layer is respectively arranged at the top of 103 both sides of the intrinsic layer；
In the P+The 104 and N of layer+The top of the side far from the intrinsic layer of layer 105 is respectively provided with hard contact
102。
Semiconductor plasma basic unit 101 be by semiconducting solid medium (such as silicon, can also be glass,
Sapphire, silicon carbide and other planes or curved surface medium substrate) in injection high concentration charged carriers and obtain, according to load
Sub- injection technique is flowed, it is divided into two classes：The plasma of the plasma and laser irradiation injection of direct current biasing injection.
The present embodiment is illustrated by taking the plasma injected using direct current biasing as an example, in other embodiments, be may be used and is based on
The plasma design of laser irradiation injection.Semiconductor plasma basic unit 101 surface PIN (SPIN) diode uses
Transversary can ensure that semiconductor plasma basic unit 101 has sufficiently high carrier concentration using transversary
(it is more than 1018A/cm3)；When semiconductor plasma basic unit 101 is driven by DC voltage, it shows as metal one
Sample becomes good conductor, and semiconductor plasma basic unit is just as the island of a plasma are, it is specified that aerial radiation
With non-radiative region.
The plasmasphere design of semiconductor plasma antenna can be based on existing SOI technology with manufacture, specifically
Shown in technological process such as Fig. 1 (d).Oxygen buried layer BOX is formed in silicon chip, then by the method for thermal oxide or vapor deposition,
Layer of silicon dioxide film is formed in the upper surface of silicon chip, to be passivated the defect state of silicon face.On this basis, in oxygen buried layer
In the silicon on top, etch the isolation channel between semiconductor plasma, then aoxidize isolation channel, after the completion of oxidation, every
Semiconductor plasma is manufactured from the region between slot.As shown in Fig. 1 (b), each semiconductor plasma basic unit 101
The SPIN diodes on top include the P of heavy doping+Area 104 and N+Area 105 and intrinsic layer 103, and be individually present.Semiconductor etc. from
Between daughter basic unit 101SPIN diodes by silica formed isolation channel 108, the purpose is to prevent semiconductor etc. from
Daughter at work, generates interfere with each other each other.
In addition to this, the present invention proposes a kind of by with metal oxide semiconductor material, such as tin oxide (SnO2), oxidation
Titanium (TiO2) and zinc oxide (ZnO) and it is doped the materials such as the oxide to be formed to it, substitutes the silicon materials in SPIN knots,
Form quasi- SPIN structures or NIN structures, and illustrate this structure for manufacture semiconductor plasma antenna when, in medium base
Array distribution on plate.Medium substrate includes silicon, glass, sapphire, silicon carbide and other planes or curved surface medium substrate.
The plasmasphere that semiconductor plasma aerial array is manufactured based on metal oxide semiconductor material is specific
Shown in technological process such as Fig. 1 (e).After to medium substrate effectively clean, surface deposits a layer thickness in 50- on it
Thin dielectric film between 200 nanometers, such as silicon nitride (SiNx) film, the dielectric films such as silica.Then, in dielectric film table
Face deposits one layer of metal oxide semiconductor films, and the thickness of film is 1-200 microns.On this basis, it is partly led in oxide
The upper surface of body thin film, redeposited one layer of thin dielectric film (ESL layers), such as silicon nitride, the dielectric films such as silica, thickness exists
Between 50-200 nanometers.
By etching technics, in the structure formed above, the valid SPIN structures of metal oxide semiconductor films
Intrinsic region other than part removal, while removing the corresponding portion of upper layer thin dielectric film.On this basis, in above structure
Surface deposit one layer of metallic film, then remove the corresponding region of metal oxide semiconductor films, it is right to form Fig. 1 (c) institutes
The quasi- SPIN structures answered.Even if very using the semiconductor plasma unit interval manufactured based on metal oxide semiconductor material
It is close also hardly to affect one another when working at the same time, thus do not have to design isolation channel between plasma unit, semiconductor etc. from
5-30 μm of spacing is kept between daughter basic unit.
Work based on quick, high current, the easy distributed directly reconfigurable multifunctional aerial array of drive array
Principle is to be formed by radiating element based on surface SPIN diodes, and the low resistance under forward bias state depends on carrier
Concentration, using this high resistivity medium substrate (the present embodiment using silicon substrate as explanation, can also be glass, Lan Bao
Stone, silicon carbide and other planes or curved surface medium substrate), a long carrier lifetime can be easy to be obtained, from radio frequency
From the viewpoint of, this is very favorable.
SPIN devices need to provide a long intrinsic layer 103, and intrinsic layer 103 carries under the action of forward bias voltage
The plasma of a stable carrier is created in the injection of stream, and the charge area of this high mobility is formed metal and leads
The electrical property of body.In off position, intrinsic layer shows high resistance and has small parasitic capacitance, shows as an insulator.
When the concentration of carrier reaches 1018A/cm3When, the conductivity of silicon-based semiconductor plasma can reach 1.6 × 104S/m, to the greatest extent
The conductivity of pipe silicon-based semiconductor plasma is far below copper 5.96 × 107The conductivity of S/m, but for most of radio frequency and
It is enough for microwave applications.
The length of semiconductor plasma basic unit is 20-200 microns, 100-900 microns of width, thickness 20-70
Micron, the width of hard contact are 5-20 micron, plasma conducting and not on-state switching time less than 1 microsecond, one
Driving voltage >=0.5V of basic unit, driving current is in 0.1~30mA.
Pixel ruler of the geometric dimension of semiconductor plasma 101 used by the present embodiment just with the aobvious screen of LCD TV
It is very little suitable therefore entirely appropriate based on quick, high current, the distribution directly drive array of easy TFT matrix driving techniques
In the control (i.e. working condition or off working state) for opening or closing state of semiconductor plasma basic unit 101.
Multi-Function Antenna described in the present embodiment can be by TFT panel technique or semiconductor technology by semiconductor plasma
With the directly drive array integration collection of the distribution based on quick, high current, easy Thin Film Transistor TFT Matrix actuation techniques
At in silicon, glass, sapphire, silicon carbide and other planes or curved surface medium substrate, successfully solves existing semiconductor
Plasma antenna design using direct wiring or gets through the process difficulties that hole is connect with driving circuit in dielectric-slab, and leads to
Line-column matrix type of drive is crossed, multiple control switching circuits can be driven by the same shift register, enormously simplify driving
The complexity of circuit so that drive more semiconductor plasma units to be possibly realized, to manufacture large-sized semiconductor
Plasma antenna.Simultaneously based on quick, high current, easy thin film transistor (TFT) (TFT) Technology design ON-OFF control circuit
With lower cost, relatively using microwave PIN diode, gallium arsenide transistor, varactor and MEMS as switching device
Restructural design is carried out to antenna, the restructural ability and function of antenna all have a distinct increment.
The reconfigurable multifunctional aerial array of the present invention, by being based on quick, high current, easy TFT matrix drivings skill
The distribution directly drive array of art can put forward the size of antenna basic unit and the position control accuracy in array environment
Height is to 50 microns, far above the 1/2-1/8 wavelength dimensions in traditional sub-wavelength period architecture reconfiguration Antenna Design, therefore can be with
Realize more accurate phase controlling and beam position；Also just because of this, under the conditions of array, compared to traditional sub-wavelength period
In architecture reconfiguration Antenna Design can only a part of antenna element work the poor efficiency brought, the present invention can make Antenna aperture
The unit of operating position needed for interior is involved in radiation, has higher radiation efficiency, while substantially reducing radar cross section
Product.
As shown in Fig. 2, the quick, high current, easy distributed directly drive array circuit 201 include medium substrate
106, array antenna controller 202, column shift register group 203, line shift register group 204 and semiconductor plasma are basic
Unit 101 controls switching circuit 205 correspondingly.
The distributed directly drive array circuit can address each semiconductor plasma basic unit 101, and
And by control switching circuit 205 correspondingly with semiconductor plasma basic unit control each semiconductor etc. from
The conduction and non-conductive state of daughter basic unit 101；
All matrixes for being constituted of control switching circuits 205 are updated to control the semiconductor plasma basic unit
101 method is specially：
Array control unit 202 is first sent the data needed for each column unit in the first row by column shift register group 203
Onto corresponding each column data line, it is total that latch signal is then sent to the first row data by line shift register group 204
On line, the data of each row are latched to the output port for each switching circuit 205 for being output to the first row.
It is progressively scanned according to aforesaid way, and the data needed for each row is latched into the switching circuit of corresponding units
205 output port completes frame data configuration until all rows are scanned.
Each control switching circuit 205 can be located at the periphery of aerial array, can also be located at aerial array inside and its
The semiconductor plasma unit 101 of driving is adjacent to；The input of each control switching circuit 205 is respectively by being located at unit battle array
Shift register 203 and/or 204 outside row is operated alone, and each shift register 203 or 204 can have all the way or multichannel
Output, per road, output driven in series one or more can control switching circuit 205 simultaneously.
, can be flexible to adjust shift register direction of displacement according to the position of data in data above configuration process,
To accelerate data configuration process.
Array control unit 202, the in store current configuration per frame data as a result, each semiconductor plasma i.e. in array
The on off state of unit 101.
Semiconductor plasma basic unit is connected by the hard contact and the distributed directly drive array circuit
It connects；
The data that the distributed directly drive array circuit renewal rate depends on column shift register group 203 can be by
The rate of load, and the switching time of 101 driving frequency of semiconductor plasma basic unit only suspension control switch circuit 205
Limitation, it is shorter much than traditional liquid-crystal active matrix driving time, musec order can be reached, meet the quick agile speed of antenna
The requirement of rate.
In liquid crystal drive is shown, the active matrix drive technology based on TFT (thin film transistor (TFT)) direct addressin is each
Pixel all configures a semiconductor switch device, and data-signal is directly loaded into liquid crystal both ends by grid impulse, is controlled
System.The response time of LCD is 4ms or so at present, and at drive pulse signal valid period (about 16.7 μ s), liquid crystal comes not at all
And it responds.Therefore, there are one storage capacitances in each pixel of LCD, after refresh signal disappearance, by storage capacitance
It powers to liquid crystal cell, and the refresh signal for remaining to next picture arrives.The presence of storage capacitance makes TFT LCD have note
Recall power, but also brings negative effect simultaneously.On the one hand, the voltage at capacitance both ends cannot be mutated, this characteristic can be such that driving believes
Number amplitude fading, steepness decline, and signal distortion, image quality reduces；On the other hand, the time-lag action of capacitance can be such that frequency response dislikes
Change, signal amplitude can be reduced with the raising of signal frequency.Storage is combined increasing with typical non-crystalline silicon tft channel resistance
Add the charging time, reduces refresh rate.If directly applying to the driving of semiconductor plasma unit of the present invention,
It cannot be satisfied the requirement of the quick agile rate of antenna.
The data that the array pattern renewal rate that the present embodiment uses depends on column shift register group 203 can be loaded
Rate, and 101 driving frequency of semiconductor plasma basic unit only suspension control switch circuit 205 switching time limit
System, it is shorter much than traditional liquid-crystal active matrix driving time, musec order can be reached, meet the quick agile rate of antenna
Requirement.
In liquid crystal drive is shown, the active based on quick, high current, easy TFT (thin film transistor (TFT)) direct addressin
Matrix driving techniques are the maximum operating currenbt also tens μ A that a semiconductor switch device of each pixel configuration designs, and are tieed up
The concentration for holding semiconductor plasma unit carrier reaches 1018A/cm3The electric current needed when above between 0.1~30mA,
Therefore traditional liquid-crystal active matrix driving design cannot be satisfied application requirement.
Distributed directly drive array circuit of the present invention can be that each described plasma unit separately provides
The driving DC voltage of > 0.5V and the driving current of 0.1~30mA.Therefore the distributed directly drive array circuit can be with
The driving current of the driving DC voltage and 0.1~30mA of > 0.5V, phase are separately provided for plasma unit described in each
It is described to be driven based on Thin Film Transistor TFT Matrix than the driving circuit for only needing μ A rank driving currents in traditional liquid crystal display
The distribution of dynamic technology directly drive array circuit is the driving circuit of a high current.
Since the size of semiconductor plasma basic unit is only 20~200 μm, and in microwave, millimeter wave frequency band one
The size of radiating element is then 1 millimeter small, greatly then several centimetres, therefore a radiating element just needs more than ten or even hundreds of half to lead
Bulk plasmon basic unit is constituted, the direct drive array of distribution based on Thin Film Transistor TFT Matrix actuation techniques
Circuit is mostly the driving circuit of the series connection and parallel combination of many plasma basic units, and this, simplifies driving electricity
Line structure.
Therefore, we, which deserve to be called, states such driving circuit for quick, high current, easily based on thin film transistor (TFT) TFT squares
The distribution of battle array actuation techniques directly drive array circuit.
Using above two technology, by this basic unit of semiconductor plasma with based on quick, high current, easy
The distribution of TFT matrix driving techniques directly drive array technology combines, and can be completed on same production line, makes structure
Based on quick, high current, easily the reconfigurable multifunctional aerial array of distributed directly drive array becomes to realize, under
Face we just introduce several representational specific implementation cases.
With reference to figure 3 (a), it is one and is typically weighed based on quick, high current, easy distributed directly drive array
The basic structure schematic diagram of structure Multi-Function Antenna array.Based on quick, high current, easy distributed directly drive array can
Reconstruct Multi-Function Antenna array 301 includes the semiconductor plasma being made of semiconductor plasma 101 this basic unit
It layer 302 and 201 is constituted based on quick, high current, the distribution directly drive array of easy TFT matrix driving techniques, and
And as shown in Fig. 3 (b), semiconductor plasma layer 302 and point based on quick, high current, easy TFT matrix driving techniques
Cloth directly drives array 201 and is located on identical medium substrate 106, can be real by TFT panel technique, semiconductor technology etc.
It is existing.Shown in Fig. 3 (c), there are one control switching circuit correspondingly therewith for each semiconductor plasma unit 101
205 pass through the P of conducting wire 206 and semiconductor plasma unit 101+Layer 104 hard contacts connection, all semiconductor plasmas
The N of unit 101+105 hard contact of layer are connect by conducting wire with power ground, are more than when controlling switching circuit 205 and opening and export
P of the driving voltage of 0V to corresponding semiconductor plasma unit 101+Layer 104 hard contact when, the semiconductor etc. from
Daughter unit 101 is at opening state (conduction state)；When control switching circuit 205 is closed and exports the voltage of 0V to therewith
The P of corresponding semiconductor plasma unit 101+When 104 hard contact of layer, which is at
Closed state (non-conductive state).From there through the array day of quick, high current, easy distributed directly drive array 201
Lane controller 202 controls each this basic unit difference of semiconductor plasma 101 on semiconductor plasma layer 302
State is opened or closed in required.As shown in Fig. 3 (d), Fig. 3 (e), pass through the half of different opening state (conduction state)
The semiconductor plasma 304 of conductor plasma 303 and closed state (non-conductive state) can form required not homopolarity
Change, the wave beam 305 or 306 of frequency and direction.
The shift register 203 or 204 that the value that control switching circuit 205 inputs is controlled by array antenna controller 202 carries
For.
Fig. 3 (a) gives the example arrangement that wherein unit drive is arranged to driving aerial array.Shift register
203 and 204 are located at each row and each row.Although diagram each row and be respectively classified as vertically, in one embodiment,
The matrix configuration can essentially not arrange in an antenna array, also not necessarily perpendicular to one another, only be to illustrate that matrix configuration is used
In the logic placement for directly driving control.In Fig. 3 (a), the shift register 203 and 204 of the control of array antenna controller 202
Positioned at the periphery of aerial array, each switching circuit 205 that controls can be located at the periphery of aerial array, can also be located at antenna array
The internal semiconductor plasma unit 101 driven with it of row is adjacent to；The input of each control switching circuit 205 respectively by
Shift register 203 or 204 outside cell array is operated alone, and each shift register 203 or 204 can have all the way
Or multiple-channel output, per road, output driven in series one or more can control switching circuit 205 simultaneously.Multiple parallel shifts are posted
Storage 203 and 204 is coupled and in response to being believed with generating parallel output control from the control signal of array antenna controller 202
Number, array antenna controller 202 is so that shift register 203 and 204 is exported on their driving circuit for controlling switch
The signal that circuit 205 inputs.In other words, array antenna controller 202 loads shift register 203 and 204 with these data,
To control which control switching circuit 205 in an ON state, which control switching circuit 205 is closed, from
And it controls corresponding semiconductor plasma 101 and is in conduction state 303 or non-conductive state 304.
9 kinds of specific embodiments of the present invention are described below, traditional structural design is well-known for those skilled in the art
Technical detail, the maximum of specific embodiments of the present invention and traditional design scheme distinguish:In the traditional design of this 9 kinds of antennas
In, the conduction state 303 of semiconductor plasma, the position at 304 place of non-conductive state, size and shape are fixed,
It can not change once designing and being molded, therefore the performance indicators such as the frequency of the antenna, polarization, directional diagram, phase accuracy are also true
Fixed；However in the specific embodiment of the invention, the conduction state 303 of the semiconductor plasma of each antenna, non-conductive state
Position, size and shape where 304 be all it is controllable in real time, therefore the performance indicator of antenna be also can defining in real time, it is real
Restructural (multiband work), polarized restructural (linear polarization, circular polarisation, elliptic polarization), the wave beam control of existing antenna frequencies
The position of restructural (beam scanning), secondary lobe with gain agility and its relative level it is restructural (anti-interference) and above-mentioned
There is greater flexibility and multifunctionality, common antenna can substitute the function of multiple antenna for various combinations.
It is the planar array antenna 401 for the one-dimensional electron beam scanning that parallel-plate waveguide is fed with reference to figure 4, by semiconductor etc.
Gas ions layer 302, quick, high current, easy distributed directly drive array 201 and parallel-plate waveguide lower panel 402 form,
Electromagnetic Wave Propagation direction is as shown by 403.The upper surface of parallel-plate waveguide plate is replaced by semiconductor plasma layer 302, Mei Geban
Conductor plasma basic unit 101 is directly driven with based on quick, high current, the distributed of easy TFT matrix driving techniques
Dynamic array 201 opens or closes state control it.It is in 304 quilt of semiconductor plasma basic unit of radiation groove location
The state (non-conductive state) of closing is controlled, the semiconductor plasma basic unit 303 of other positions is controlled to opening
State (conduction state).The polarization of this antenna and beam position can thus be accurately controlled, this antenna is made to become polarization
The one-dimensional electron beam scanning Phased Array Antenna of agile.And such antenna does not utilize individual phase shifter and TR components,
Allow the cost of this antenna at the reduction of the order of magnitude, heat dissipation problem is also not present.Compared with traditional phased array antenna, this
Antenna is a low profile, light-weight, small power consumption, flat plane antenna at low cost.
Fig. 5 (a) and Fig. 5 (b) is the planar array of the two dimensional beam scanning and polarization agile of a radial line waveguide feed
Antenna 501 is directly driven by radial line waveguide 502, semiconductor plasma layer 302, quick, high current, easy distribution
Array 201, coaxial probe 503, coaxial fitting 504 and dielectric layer 505 form.The upper conducting plate of radial line waveguide 502 is by half
Conductor plasma layer 302 is replaced, exact position, orientation and the size of slot by semiconductor plasma basic unit closing
State 304 determines that remaining place is then determined by the opening state 303 of semiconductor plasma basic unit.Such structure
At planar slot array antenna main beam scanning range be 360 ° of orientation, pitching be ± 72 °, additionally by the relative position of slot
And orientation, this antenna either linear polarization (vertical linear polarization, horizontal linear polarization), can also be circular polarisation (left-hand circular polarization,
Right-handed circular polarization), switch speed is exceedingly fast, about 1 microsecond.
With reference to figure 6, it shows the leaky-wave antenna 601 fed by rectangular waveguide, the upper conductive wall of same rectangular waveguide 602
It is replaced by semiconductor plasma layer 302, the radius on this wall can be by the closing of semiconductor plasma basic unit
State 304 is dynamically formed, and radius is accurately controlled by quick, high current, easy distributed directly drive array 201
Position and size, this leaky-wave antenna directional diagram direction substantially penetrates from end-fire to side and then goes to back reflection, with traditional leaky wave
Antenna is not to make antenna beam scanning by frequency but determine slot place by dynamically accurate compared to this leaky-wave antenna
Position come make main beam scan.
With reference to figure 7, it shows to be directly driven by semiconductor plasma layer 302, quick, high current, easy distribution
The schematic diagram for the reflectarray antenna 701 that array 201, feed 702 and floor 703 are constituted, 303 silicon substrates etc. being in working condition
Gas ions 101,304 are the silicon-based semiconductor plasma 101 of off working state, pass through quick, high current, easy distribution
The size that array 201 dynamically determines each patch antenna element 303 is directly driven, due reflected phase is made it have
Value, can be such that the main beam of antenna is scanned.
With reference to figure 8, it shows to be directly driven by semiconductor plasma layer 302, quick, high current, easy distribution
The knife-edge fractal antenna 801 that array 201 is constituted, due to fabulous air dynamic behaviour, such blade antenna is frequently used in
On aircraft, point shape is that the fillibility of self-similarity and plane/space is utilized, by generating first (parent) several times to one
Iteration can generate a complex-shaped antenna, utilize quick, high current, easy distributed directly drive array 201
The state for controlling the state 303 of the opening of the semiconductor plasma basic unit on semiconductor plasma layer 302 and closing
304, so that it may constitute the geometry and size of fractal antenna, therefore compared with traditional fractal antenna, it has matching network
Simply, impedance is easy the advantages of matching.
With reference to figure 9, it shows to be directly driven by semiconductor plasma layer 302, quick, high current, easy distribution
The schematic diagram for the flat helical antenna 901 that array 201 is constituted.The shape and size of helical antenna conductor in figure are by partly leading
Bulk plasmon basic unit 101 arrives its opening by quick, high current, easy distributed directly drive array 201 control
State 303 determines, compared with traditional helical antenna, its size, the rotation direction of helix be at the scene dynamically by it is quick,
High current, easy distributed directly drive array 201 determine.Therefore, such antenna not only have lower working frequency but also
Left-hand circular polarization or right-handed circular polarization can be made, the function of conventional helical antenna is extended.
With reference to figure 10, what it showed is direct by semiconductor plasma layer 302, quick, high current, easy distribution
The schematic diagram for the holographic artificial impedance skin antenna 1001 that drive array 201 is constituted, the surface at a certain position of plane
Impedance is determined by the size and period distances of sub-wavelength dimensions side's patch.Compared with traditional artificial impedance skin antenna,
The antenna is dynamically to be formed by quick, high current, easy distributed directly drive array 201 at the scene, therefore can made
The main beam of this antenna is arbitrarily scanned, while the elongated slot by opening a different orientation on square chip unit, also
The polarization of this antenna can be changed.
With reference to figure 11 (a) and 11 (b), what it showed is by semiconductor plasma layer 302, quick, high current, easy
The distributed part that directly drive array 201, chip unit 1102, feed 1103, floor 1104 and dielectric layer 1105 are constituted
Reflecting surface antenna 1101, traditional partially reflecting surface are replaced by semiconductor plasma layer 302, and reflector element is by fast
Victory, high current, the semiconductor plasma basic unit of easy distributed directly drive array 201 control to closed state
304 are constituted, and the antenna constituted in this way had not only had the function of beam scanning but also had the function of the agile that polarizes.
With reference to figure 12 (a) and 12 (b), what it showed is by semiconductor plasma layer 302, quick, high current, easy
The schematic diagram of the phased array antenna 1201 that drive array 201, radiating curtain 1203 are constituted distributed directly, wherein semiconductor etc.
Gas ions layer 302, quick, high current, the easy distributed mode transmission frequency-selective surfaces that directly drive array 201 is constituted
(FSS) 1202 it is used as phase shifter.It is well known that traditional phased array antenna is multilayered structure from the top down, from top to bottom according to
It is secondary to be：First layer is radiating element layer, and the second layer is phase shifter layer, and third layer is active T/R module layer, and the 4th layer is heat dissipation
Layer, layer 5 is control circuitry layer, and layer 6 is power supply layer.We can reverse thinking phase shifter layer is placed on radiating element layer
The upper surface of, and the FSS phase shifters of mode transmission are most suitable for this reverse thinking.Mode transmission FSS phase shifters are the annulars by sub-wavelength
Becket is constituted, and is controlled its size and period, can be controlled its amount of phase shift.But the wave beam of phased array needs large-scale
Scanning, and the amount of phase shift of mode transmission FSS is related with the incidence angle of radio frequency electromagnetic.General Study shows until oblique incident angle
When being 30 °, the amount of phase shift of its transmission coefficient is substantially unrelated with incidence angle and the only spacing between the size of unit and unit
It is related, therefore this phase shifter must make two layers, below one layer only by 30 ° of beam tilt, and upper layer tilts wave beam again
30 °, two layers can be by beam scanning to pitching ± 60 °.
Traditional mode transmission phase shifter is to generate one on an azimuth by the size and period of control unit
So that wave beam is scanned 30 ° of phase gradient on pitching face, therefore to carry out beam scanning in 360 ° of orientation, pitching ± 60 ° range,
With regard to needing bilevel opposite and common mechanical movement, this is not the concept of phased array truly, because in phase
It is that neither one component needs mechanical movement to control in array antenna.
And the transmission being made of the basic unit of the controlled semiconductor plasma on semiconductor plasma layer 302 101
Type frequency-selective surfaces (FSS) 1202 are at the scene dynamically by quick, high current, easy distributed direct drive array
201 determine the position, size and period of mode transmission frequency-selective surfaces (FSS) 1202 Component units 303, so as in a certain orientation
Face side is upwardly formed suitable phase gradient, and agile be switched to another azimuth from a certain azimuth, thus eliminate
The opposite and associated movement of upper layer and lower layer FSS, therefore just at phased array antenna truly, but its cost is phase
When low, and it is low profile, light-weight, while also eliminates the requirement of active TR assembly radiatings.
With reference to figure 13, what it showed is direct by semiconductor plasma layer 302, quick, high current, easy distribution
The schematic diagram for the corner-reflector antenna 1301 that drive array 201 is constituted.As shown in figure 13, reflector 1302 is by conducting state
Plasma unit 303 is constituted, and instead of the metallic plate of traditional corner-reflector antenna, dipole array 1303 is equally by conducting shape
The plasma unit 303 of state is constituted.The corner-reflector antenna 1301 constituted in this way is a corner reflector when it works
Antenna；When it does not work, all mechanisms have essentially become a medium.The Radar Cross Section of the medium is much small
In the Radar Cross Section of metal, therefore such accurate three-dimensional corner-reflector antenna is highly suitable for the fields such as electronic countermeasure and answers
With.
In short, the present invention's is unequal to herding act using specific embodiment, application range and field are extremely extensive, just as taking product
Wood and picture mosaic are such, in real time, the radiation area of antenna or non-radiative area are dynamically constituted, to reach to the various electrical parameters of antenna
It is controlled.
It is conventional with reference to this field for those skilled in the art's widely-known technique details in the description of specific implementation mode
Technology.
Claims (9)
1. restructural Multi-Function Antenna, which is characterized in that the Multi-Function Antenna using semiconductor plasma as basic unit,
And the Multi-Function Antenna includes distributed directly drive array circuit, passes through the distributed directly drive array circuit control
The working condition or off working state of each semiconductor plasma basic unit, in real time, dynamically constitute antenna
Radiation area or non-radiative area, and then to antenna frequencies, polarization, wave beam control, gain, secondary lobe position and its relative level carry out
Control；Wherein, the working condition is plasmoid, and the off working state is non-plasma state；It is described
Distributed directly drive array circuit is based on Thin Film Transistor TFT Matrix actuation techniques, and the direct drive array of distribution
Circuit switching time is short, driving current is big, type of drive is simple.
2. restructural Multi-Function Antenna according to claim 1, which is characterized in that the distributed directly drive array electricity
Road is used to separately provide for each described semiconductor plasma basic unit >=and the driving DC voltage of 0.5V and 0.1~
The driving current of 30mA, switching time is 1~30 μ s, and type of drive is all semiconductors etc. to constituting metallic conduction area
Gas ions basic unit carries out easy matrix form driving.
3. restructural Multi-Function Antenna according to claim 1, which is characterized in that the semiconductor plasma is substantially single
The first and described distributed directly drive array circuit is made on same medium substrate by the way that semiconductor technology is integrated
It makes；In the Multi-Function Antenna, the semiconductor plasma basic unit and the direct drive array of distribution
Circuit is located at the same surface of antenna medium substrates, constitutes a single layer structure.
4. restructural Multi-Function Antenna according to claim 3, which is characterized in that the medium substrate using silicon, glass,
Sapphire or silicon carbide are plane or curved surface as host material.
5. restructural Multi-Function Antenna according to claim 1, which is characterized in that the semiconductor plasma is substantially single
SPIN knots in member are prepared using silicon or metal oxide semiconductor material.
6. restructural Multi-Function Antenna according to claim 5, which is characterized in that the metal oxide semiconductor material
For stannic oxide (SnO2), titanium dioxide (TiO2), any one in zinc oxide (ZnO)；Or
The metal oxide semiconductor material is to be with stannic oxide (SnO2), titanium dioxide (TiO2) or zinc oxide (ZnO)
Matrix, one or two kinds of elements are formed by semi-conducting material in doped indium, gallium；Preferably, the metal-oxide semiconductor (MOS)
Material is indium zinc oxide (IZO) or indium gallium zinc oxide (IGZO).
7. according to any one of the claim 1-6 restructural Multi-Function Antennas, which is characterized in that restructural more work(
Energy antenna is plane Multi-Function Antenna or quasi- three-dimensional multi-functional antenna.
8. according to any one of the claim 1-6 restructural Multi-Function Antennas, which is characterized in that restructural more work(
Energy antenna is corner-reflector antenna, log spiral antenna, the phased array using mode transmission frequency-selective surfaces FSS as phase shifter
Any one in antenna or blade type parting antenna.
9. according to any one of the claim 1-7 restructural Multi-Function Antennas, which is characterized in that restructural more work(
Can antenna can realize restructural, polarized restructural, the wave beam control of antenna frequencies and the quick restructural, secondary lobe of gain and
Its relative level it is restructural in any one or it is two kinds and two or more arbitrary.
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| CN201810549193.4A CN108767445A (en) | 2018-05-31 | 2018-05-31 | Reconfigurable multifunctional antenna based on distributed directly drive array |
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| CN201810549193.4A CN108767445A (en) | 2018-05-31 | 2018-05-31 | Reconfigurable multifunctional antenna based on distributed directly drive array |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109709826A (en) * | 2018-11-30 | 2019-05-03 | 中国电子科技集团公司第三十八研究所 | A kind of transmitting-receiving subassembly transmitter phase fast switch over method |
| CN112434454A (en) * | 2020-11-13 | 2021-03-02 | 中国舰船研究设计中心 | Array antenna embedded integrated design method based on angular reflection effect |
| CN112615166A (en) * | 2020-11-24 | 2021-04-06 | 中国电子科技集团公司第三十八研究所 | Modularized array antenna capable of simultaneously reconfiguring frequency, aperture and polarization and using method |
| CN113314835A (en) * | 2021-05-26 | 2021-08-27 | 北京京东方技术开发有限公司 | Solid-state plasmon antenna and preparation method thereof |
| CN113412556A (en) * | 2019-02-25 | 2021-09-17 | 华为技术有限公司 | Antenna for integration with a display |
| CN114050408A (en) * | 2021-11-23 | 2022-02-15 | 国开启科量子技术(北京)有限公司 | Microstrip antenna array, ion trap driving device and phase parameter calculation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716421A (en) * | 2015-04-08 | 2015-06-17 | 南开大学 | Reconfigurable antenna in programmable control |
| CN105960736A (en) * | 2014-02-19 | 2016-09-21 | 集美塔公司 | Dynamic polarization and coupling control for steerable, multilayered cylindrically fed holographic antenna |
| CN106450765A (en) * | 2016-09-08 | 2017-02-22 | 电子科技大学 | Millimeter wave reconstructible antenna |
| CN106911001A (en) * | 2017-02-09 | 2017-06-30 | 南京邮电大学 | A kind of dynamic multi-frequency multi-beam space arbitrary scan reflective array |
| CN107275805A (en) * | 2017-04-27 | 2017-10-20 | 北京华镁钛科技有限公司 | A kind of phased array antenna based on Meta Materials electromagnetic property |
| CN207338631U (en) * | 2017-10-11 | 2018-05-08 | 南京邮电大学 | A kind of programmable total space beam scanning antennas based on solid state plasma |
-
2018
- 2018-05-31 CN CN201810549193.4A patent/CN108767445A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105960736A (en) * | 2014-02-19 | 2016-09-21 | 集美塔公司 | Dynamic polarization and coupling control for steerable, multilayered cylindrically fed holographic antenna |
| CN104716421A (en) * | 2015-04-08 | 2015-06-17 | 南开大学 | Reconfigurable antenna in programmable control |
| CN106450765A (en) * | 2016-09-08 | 2017-02-22 | 电子科技大学 | Millimeter wave reconstructible antenna |
| CN106911001A (en) * | 2017-02-09 | 2017-06-30 | 南京邮电大学 | A kind of dynamic multi-frequency multi-beam space arbitrary scan reflective array |
| CN107275805A (en) * | 2017-04-27 | 2017-10-20 | 北京华镁钛科技有限公司 | A kind of phased array antenna based on Meta Materials electromagnetic property |
| CN207338631U (en) * | 2017-10-11 | 2018-05-08 | 南京邮电大学 | A kind of programmable total space beam scanning antennas based on solid state plasma |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109709826A (en) * | 2018-11-30 | 2019-05-03 | 中国电子科技集团公司第三十八研究所 | A kind of transmitting-receiving subassembly transmitter phase fast switch over method |
| CN113412556A (en) * | 2019-02-25 | 2021-09-17 | 华为技术有限公司 | Antenna for integration with a display |
| US11804660B2 (en) | 2019-02-25 | 2023-10-31 | Huawei Technologies Co., Ltd. | Antenna for integration with a display |
| CN112434454A (en) * | 2020-11-13 | 2021-03-02 | 中国舰船研究设计中心 | Array antenna embedded integrated design method based on angular reflection effect |
| CN112434454B (en) * | 2020-11-13 | 2022-08-02 | 中国舰船研究设计中心 | Array antenna embedded integrated design method based on angular reflection effect |
| CN112615166A (en) * | 2020-11-24 | 2021-04-06 | 中国电子科技集团公司第三十八研究所 | Modularized array antenna capable of simultaneously reconfiguring frequency, aperture and polarization and using method |
| CN113314835A (en) * | 2021-05-26 | 2021-08-27 | 北京京东方技术开发有限公司 | Solid-state plasmon antenna and preparation method thereof |
| CN114050408A (en) * | 2021-11-23 | 2022-02-15 | 国开启科量子技术(北京)有限公司 | Microstrip antenna array, ion trap driving device and phase parameter calculation method |
| CN114050408B (en) * | 2021-11-23 | 2023-08-18 | 国开启科量子技术(北京)有限公司 | Microstrip antenna array, ion trap driving device and phase parameter calculation method |
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