EP2969911A4 - ELECTRO-MECHANICAL MICRO-SYSTEM ACOUSTIC TRANSDUCER HAVING A SILICON NITRIDE-BASED SUPPORT PLATE AND A SILICON-BASED SACRIFICED LAYER - Google Patents

ELECTRO-MECHANICAL MICRO-SYSTEM ACOUSTIC TRANSDUCER HAVING A SILICON NITRIDE-BASED SUPPORT PLATE AND A SILICON-BASED SACRIFICED LAYER

Info

Publication number
EP2969911A4
EP2969911A4 EP14775941.9A EP14775941A EP2969911A4 EP 2969911 A4 EP2969911 A4 EP 2969911A4 EP 14775941 A EP14775941 A EP 14775941A EP 2969911 A4 EP2969911 A4 EP 2969911A4
Authority
EP
European Patent Office
Prior art keywords
silicon
backplate
sacrificial layer
acoustic transducer
mems acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14775941.9A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2969911A1 (en
Inventor
Ando Feyh
Andrew Graham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2969911A1 publication Critical patent/EP2969911A1/en
Publication of EP2969911A4 publication Critical patent/EP2969911A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
EP14775941.9A 2013-03-14 2014-03-12 ELECTRO-MECHANICAL MICRO-SYSTEM ACOUSTIC TRANSDUCER HAVING A SILICON NITRIDE-BASED SUPPORT PLATE AND A SILICON-BASED SACRIFICED LAYER Withdrawn EP2969911A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361781940P 2013-03-14 2013-03-14
PCT/US2014/024147 WO2014159552A1 (en) 2013-03-14 2014-03-12 Mems acoustic transducer with silicon nitride backplate and silicon sacrificial layer

Publications (2)

Publication Number Publication Date
EP2969911A1 EP2969911A1 (en) 2016-01-20
EP2969911A4 true EP2969911A4 (en) 2016-11-02

Family

ID=51625196

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14775941.9A Withdrawn EP2969911A4 (en) 2013-03-14 2014-03-12 ELECTRO-MECHANICAL MICRO-SYSTEM ACOUSTIC TRANSDUCER HAVING A SILICON NITRIDE-BASED SUPPORT PLATE AND A SILICON-BASED SACRIFICED LAYER

Country Status (3)

Country Link
EP (1) EP2969911A4 (zh)
CN (1) CN105531220A (zh)
WO (1) WO2014159552A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10104478B2 (en) * 2015-11-13 2018-10-16 Infineon Technologies Ag System and method for a perpendicular electrode transducer
CN105392093B (zh) * 2015-12-03 2018-09-11 瑞声声学科技(深圳)有限公司 麦克风芯片的制造方法
CN108100990B (zh) * 2017-12-21 2019-07-12 中国电子科技集团公司第五十四研究所 一种三明治夹心型光刻胶牺牲层的制备方法
CN109956447A (zh) * 2017-12-25 2019-07-02 中芯国际集成电路制造(上海)有限公司 一种mems器件及制备方法、电子装置
CN108650605B (zh) * 2018-05-22 2024-03-19 上饶市经纬自动化科技有限公司 一种具有能量采集功能的声学传感器及其制作方法
CN110316692B (zh) * 2019-05-23 2022-05-31 王传蔚 互补式金氧半微机电麦克风及其制作方法
US10981780B2 (en) * 2019-08-19 2021-04-20 Infineon Technologies Ag Membrane support for dual backplate transducers
WO2021226268A1 (en) * 2020-05-05 2021-11-11 Tdk Electronics Ag Microelectromechanical microphone with membrane trench reinforcements and method of fabrication
CN114257949B (zh) * 2020-09-25 2023-11-03 地球山(苏州)微电子科技有限公司 一种扬声器的制造方法及扬声器
CN112601168B (zh) * 2020-12-22 2022-08-26 杭州士兰集昕微电子有限公司 Mems麦克风的制备方法及mems器件的牺牲层的释放方法
CN115656548B (zh) * 2022-11-09 2023-07-21 湖南大学 一种mems气流传感器
CN116425110B (zh) * 2023-06-12 2023-09-19 之江实验室 具有差分结构的高温光电压力传感芯片的晶圆级制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558184A (en) * 1983-02-24 1985-12-10 At&T Bell Laboratories Integrated capacitive transducer
US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1787694A (zh) * 2004-12-10 2006-06-14 美律实业股份有限公司 硅晶微麦克风的制作方法
DE102005016243B3 (de) * 2005-04-08 2006-09-28 Austriamicrosystems Ag Mikromechanisches Bauelement, Verfahren zur Herstellung und Verwendung
CN1859815B (zh) * 2005-04-30 2011-11-09 中国科学院声学研究所 一种多晶硅振动膜硅微电容传声器芯片及其制备方法
GB2454603B (en) * 2006-02-24 2010-05-05 Wolfson Microelectronics Plc Mems device
GB0605576D0 (en) * 2006-03-20 2006-04-26 Oligon Ltd MEMS device
EP2244490A1 (en) * 2009-04-20 2010-10-27 Nxp B.V. Silicon condenser microphone with corrugated backplate and membrane
US8093119B2 (en) * 2009-06-24 2012-01-10 Solid State System Co., Ltd. CMOS microelectromechanical system (MEMS) device and fabrication method thereof
US8847289B2 (en) * 2010-07-28 2014-09-30 Goertek Inc. CMOS compatible MEMS microphone and method for manufacturing the same
US9148712B2 (en) * 2010-12-10 2015-09-29 Infineon Technologies Ag Micromechanical digital loudspeaker
CN102225739A (zh) * 2011-04-15 2011-10-26 中国科学院上海微系统与信息技术研究所 一种基于mems工艺的可调fp光学滤波器的制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558184A (en) * 1983-02-24 1985-12-10 At&T Bell Laboratories Integrated capacitive transducer
US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2014159552A1 *

Also Published As

Publication number Publication date
CN105531220A (zh) 2016-04-27
WO2014159552A1 (en) 2014-10-02
EP2969911A1 (en) 2016-01-20

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